CN110032037A - The production method of optical adjacent correction method and mask plate - Google Patents
The production method of optical adjacent correction method and mask plate Download PDFInfo
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- CN110032037A CN110032037A CN201810029848.5A CN201810029848A CN110032037A CN 110032037 A CN110032037 A CN 110032037A CN 201810029848 A CN201810029848 A CN 201810029848A CN 110032037 A CN110032037 A CN 110032037A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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Abstract
The production method of a kind of optical adjacent correction method and mask plate, modification method include: to carry out OPC amendment to sub- targeted graphical, obtain initial correction figure；First analogue exposure several times is carried out to initial correction figure, obtains several first analogue exposure figures under several conditions of exposures；Obtain detection mark position in each first analogue exposure figure, the corresponding figure of the detection mark position characteristic size direction size outside first threshold range；Size and first threshold range according to the corresponding figure of detection mark position in characteristic size direction correct the corresponding initial correction figure of detection mark position at least once, obtain correction pattern.Increase the process window of correction pattern.
Description
Technical field
The present invention relates to field of semiconductor manufacture more particularly to the production sides of a kind of optical adjacent correction method and mask plate
Method.
Background technique
Photoetching technique is a vital technology in semiconductor fabrication techniques, photoetching technique can be realized by figure from
It is transferred to silicon chip surface in mask plate, forms the semiconductor product for meeting design requirement.Photoetching process includes step of exposure, exposure
Etch step after the development step and development step that are carried out after step.In step of exposure, light passes through in mask plate
In the area illumination to the silicon wafer for being coated with photoresist of light transmission, photoresist issues biochemical reaction in the irradiation of light；Developing
In step, using photosensitive and not photosensitive photoresist to the difference of the dissolution degree of developer, photoengraving pattern is formed, realizes exposure mask
Version pattern is transferred on photoresist；In etch step, photoengraving pattern is formed by based on photoresist layer, silicon wafer is performed etching,
The pattern of mask plate is further transferred on silicon wafer.
In semiconductor fabrication, with the continuous diminution of design size, design size becomes closer to photolithographic imaging system
The limit, the diffraction effect of light becomes to be more and more obvious, and causes finally to generate optical image to design configuration and degenerate, is actually formed
Photoengraving pattern Severe distortion occurs relative to the pattern on mask plate, finally by the actual graphical that is lithographically formed on silicon wafer
Different with design configuration, this phenomenon is known as optical proximity effect (OPE:Optical Proximity Effect).
For correcting optical adjacency effect, optical near-correction (OPC:Optical Proximity is just produced
Correction).The core concept of optical near-correction be namely based on offset optical proximity effect the considerations of establish optical adjacent
Calibration model, according to optical proximity correction model design photomask figure, although the corresponding light of litho pattern in this way after photoetching
Mask graph has occurred optical proximity effect, but due to when according to optical proximity correction model design photomask figure
The counteracting to the phenomenon is considered, therefore, litho pattern after photoetching is close to the practical targeted graphical intentionally got of user.
However, the process window of the figure of optical near-correction is smaller in the prior art.
Summary of the invention
The production method that problems solved by the invention is to provide a kind of optical adjacent correction method and mask plate is repaired with increasing
The process window of positive figure.
To solve the above problems, the present invention provides a kind of optical adjacent correction method, comprising: provide targeted graphical, target
There are several sub-goal figures, sub-goal figure has characteristic size direction in figure；Obtain exposure energy extreme value E0, exposure it is burnt
Deep extreme value f0, exposure deflection energy EδDepth of focus f is deviated with exposureφ；In exposure energy extreme value E0With exposure depth of focus extreme value f0Condition
Under, OPC amendment is carried out to sub- targeted graphical, obtains initial correction figure；Under several conditions of exposures to initial correction figure into
Capable first analogue exposure several times, obtains several first analogue exposure figures under several conditions of exposures, in the first analogue exposure
Several conditions of exposures in, the exposure energy of Partial exposure condition is E0, the exposure energy of Partial exposure condition is E0+Eδ, part
The exposure energy of conditions of exposure is E0-Eδ, the depth of focus of Partial exposure condition is f0, the depth of focus of Partial exposure condition is f0-fφ, portion
The depth of focus for dividing conditions of exposure is f0+fφ；Detection mark position, the detection marker bit are obtained in each first analogue exposure figure
Corresponding figure is set in the size in characteristic size direction outside first threshold range；According to the figure of detection mark position in feature
The size and first threshold range of dimensional directions repair the corresponding initial correction figure of detection mark position at least once
Just, until detecting the corresponding figure of mark position in the size in characteristic size direction in first threshold range, acquisition correction map
Shape.
Optionally, during carrying out first analogue exposure, the conditions of exposure of the first analogue exposure includes first
Conditions of exposure is to the 9th conditions of exposure；The exposure energy of first conditions of exposure, the second conditions of exposure and third conditions of exposure is
E0, the depth of focus of the first conditions of exposure is f0, the depth of focus of the second conditions of exposure is f0-fφ, the depth of focus of third conditions of exposure is f0+fφ；
The exposure energy of 4th conditions of exposure, the 5th conditions of exposure and the 6th conditions of exposure is E0-Eδ, the depth of focus of the 4th conditions of exposure
For f0, the depth of focus of the 5th conditions of exposure is f0-fφ, the depth of focus of the 6th conditions of exposure is f0+fφ；7th conditions of exposure, the 8th exposure
The exposure energy of condition and the 9th conditions of exposure is E0+Eδ, the depth of focus of the 7th conditions of exposure is f0, the coke of the 8th conditions of exposure
Depth is f0-fφ, the depth of focus of the 9th conditions of exposure is f0+fφ。
Optionally, fφIt is 40 nanometers~45 nanometers.
Optionally, EδFor E03%~4%.
Optionally, the first threshold range is [a ,+∞], wherein a is greater than zero；Detect the corresponding figure of mark position
When size in characteristic size direction is outside first threshold range, the corresponding figure of detection mark position is in characteristic size direction
Size is less than a；When detecting size of the corresponding figure of mark position in characteristic size direction in first threshold range, detection
Size of the corresponding figure of mark position in characteristic size direction is more than or equal to a.
Optionally, the method for obtaining the detection mark position in each first analogue exposure figure includes: to simulate each first
Exposure figure is divided into several detection zones；Obtain minimum dimension position of the figure on characteristic size direction in each detection zone
It sets, in corresponding detection zone, the figure at minimum dimension position has minimum dimension；It compares at each minimum dimension position
Minimum dimension and first threshold range；If minimum dimension is outside first threshold range, by the corresponding minimum dimension of minimum dimension
Position is as detection mark position.
Optionally, carrying out the modified method of the OPC includes: to provide OPC correction model；According to OPC correction model antithetical phrase
Targeted graphical is modified, and obtains intermediate correction pattern；Second analogue exposure is carried out to intermediate correction pattern, obtains the second simulation
Exposure figure, the exposure energy of the second analogue exposure are E0, the depth of focus of the second analogue exposure is f0；According to the second analogue exposure figure
Positional shift between shape and targeted graphical obtains edge placement error；If edge placement error is greater than second threshold, basis
OPC correction model is modified intermediate correction pattern, until edge placement error is less than or equal to second threshold；When edge is corrected
When error is less than or equal to second threshold, using intermediate correction pattern as initial correction figure.
Optionally, the acquisition methods of the OPC correction model include: to provide the first test mask version, first test
There are several first resolution charts in mask plate；First resolution chart is exposed, the first test actual exposure figure is obtained；
The size of first test actual exposure figure is measured, the first test data is obtained；First resolution chart is simulated
Exposure, obtains the first test simulation exposure figure；The size of first test simulation exposure figure is measured, second is obtained and surveys
Try data；By the first test data and the second test data is compared and the Fitting Calculation, obtains OPC correction model.
Optionally, exposure energy extreme value E is obtained0With exposure depth of focus extreme value f0Method include: provide the second test mask
Edition, there is test badge figure and main graphic in the second test mask version；The target detection mark of test badge figure is provided
Remember exposure figure；Under conditions of different exposure energies and different exposure depths of focus, actual exposure is carried out to the second test mask version,
Several second tests actual exposure figures are obtained, the second test actual exposure figure includes the of corresponding test badge figure
One label exposure figure；When the first label exposure figure is consistent with target detection label exposure figure, obtains exposure energy and make
For exposure energy extreme value E0；The size of the first label exposure figure is obtained in exposure energy extreme value E0When with depth of focus variation relation；
It obtains in the variation relation, the depth of focus of the maximum of points of the size of the first label exposure figure is as exposure depth of focus extreme value f0。
The present invention also provides a kind of production methods of mask plate, comprising: uses above-mentioned any one optical proximity correction side
The correction pattern that method obtains makes mask plate.
Compared with prior art, technical solution of the present invention has the advantage that
In the optical adjacent correction method that technical solution of the present invention provides, to initial correction figure under several conditions of exposures
The first analogue exposure is carried out, in several conditions of exposures of the first analogue exposure, exposure energy includes E0、E0+EδAnd E0-Eδ, burnt
Deep covering includes f0、f0-fφAnd f0+fφ, therefore under the conditions of exposure of large range of exposure energy and large range of depth of focus
Determine detection mark position.The corresponding initial correction figure of detection mark position is modified later, until detection marker bit
Corresponding figure is set in the size in characteristic size direction in first threshold range.The correction pattern obtained in this way is in actual exposure
During, although actual exposure energy deviates exposure energy extreme value E0Larger, the process window of depth of focus is also larger, meets technique
The requirement of design.
In the production method for the mask plate that technical solution of the present invention provides, obtained according to above-mentioned optical adjacent correction method
Correction pattern makes mask plate.During carrying out actual exposure to mask plate, although exposure energy deviates exposure energy pole
Value E0Larger, the process window of depth of focus is also larger, meets the requirement of technological design.
Detailed description of the invention
Fig. 1 is the flow chart of optical adjacent correction method in one embodiment of the invention；
Fig. 2 to Fig. 6 is the schematic diagram of optical proximity correction process in one embodiment of the invention.
Specific embodiment
As described in background, the process window for the figure that existing optical adjacent correction method obtains is smaller.
A kind of optical adjacent correction method, comprising: targeted graphical is provided, there are several sub-goal figures in targeted graphical；
Exposure energy extreme value E is set0With exposure depth of focus extreme value f0；OPC correction model is provided；In exposure energy extreme value E0With exposure depth of focus
Extreme value f0Under conditions of, OPC amendment is carried out to sub- targeted graphical according to OPC correction model, obtains correction pattern, correction pattern
Edge placement error is less than or equal to first threshold.
After obtaining correction pattern, usually also need to carry out OPC detection to correction pattern, to obtain detection mark position, inspection
Surveying mark position is commonly referred to as weak point.Specifically, carrying out analogue exposure to correction pattern, detection analogue exposure figure is obtained
Shape, the exposure energy of OPC detection are E0, the exposure depth of focus of OPC detection is f0-fφAnd f0+fφ；By comparing detection analogue exposure
The size and second threshold condition of figure various loci determine that detection mark position, second threshold condition are come according to the technological requirements
It determines.Position deviation usually between the dimension of picture and targeted graphical of detection marked locations, which meets, is less than or equal to first threshold
Condition.
Mask plate is made according to the correction pattern.In actual process, actual exposure is carried out to mask plate, is obtained practical
Exposure figure.
The effect of the detection mark position includes: that detection mark position mark actual exposure figure needs fabrication evaluation
Actual exposure figure is needed the position of fabrication evaluation to be known as actually detected position by position for convenience of explanation.
However, due to the fluctuation of exposure technology condition, actual exposure energy may deviate exposure energy in actual process
Measure extreme value E0, actual exposure depth of focus, which may deviate, exposes depth of focus extreme value f0, dimension of picture and targeted graphical at actually detected position
Deviation it is larger, at this moment detect marked locations dimension of picture and targeted graphical between position deviation be not able to satisfy less than etc.
In the condition of first threshold.The process window for detecting marked locations is smaller.
On this basis, the present invention provides a kind of optical adjacent correction method, with reference to Fig. 1, comprising:
S01: targeted graphical is provided, there are several sub-goal figures in targeted graphical, sub-goal figure has characteristic size
Direction；
S02: exposure energy extreme value E is obtained0, exposure depth of focus extreme value f0, exposure deflection energy EδDepth of focus f is deviated with exposureφ；
S03: in exposure energy extreme value E0With exposure depth of focus extreme value f0Under conditions of, OPC amendment is carried out to sub- targeted graphical,
Obtain initial correction figure；
S04: the first analogue exposure several times is carried out to initial correction figure under several conditions of exposures, obtains several exposures
Under the conditions of several first analogue exposure figures, in several conditions of exposures of the first analogue exposure, the exposure of Partial exposure condition
Light energy is E0, the exposure energy of Partial exposure condition is E0+Eδ, the exposure energy of Partial exposure condition is E0-Eδ, Partial exposure
The depth of focus of condition is f0, the depth of focus of Partial exposure condition is f0-fφ, the depth of focus of Partial exposure condition is f0+fφ；
S05: detection mark position, the corresponding figure of the detection mark position are obtained in each first analogue exposure figure
Characteristic size direction size outside first threshold range；
S06: size and first threshold range according to the corresponding figure of detection mark position in characteristic size direction, to inspection
It surveys the corresponding initial correction figure of mark position to be corrected at least once, until the figure of detection mark position is in characteristic size
The size in direction obtains correction pattern in first threshold range.
The method determines detection label under the conditions of exposure of large range of exposure energy and large range of depth of focus
Position.The corresponding initial correction figure of detection mark position is modified later, the correction pattern obtained in this way is in practical exposure
In the process of light, although actual exposure energy deviates exposure energy extreme value E0Larger, the process window of depth of focus is also larger, meets work
The requirement of skill design.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
Fig. 2 to Fig. 6 is the schematic diagram of optical proximity correction process in one embodiment of the invention.
In conjunction with referring to figs. 2 and 3, Fig. 3 is the schematic diagram of graphic element A in Fig. 2, provides icon graphic, in targeted graphical
With several sub-goal figures 100, sub-goal figure 100 has characteristic size direction.
The targeted graphical is the figure that needs are designed on photoresist layer；The photoresist layer for etching to layer, to
Etched features are formed in etch layer.
The targeted graphical includes all having several specific items in several adjacent graphic element A, each graphic element A to mark on a map
Shape 100.
Then, exposure energy extreme value E is obtained0, exposure depth of focus extreme value f0, exposure deflection energy EδDepth of focus f is deviated with exposureφ。
Obtain exposure energy extreme value E0With exposure depth of focus extreme value f0Method include: that the second test mask version is provided, described the
There is test badge figure and main graphic in two test mask versions；The target detection for providing test badge figure marks exposure diagram
Shape；Under conditions of different exposure energies and different exposure depths of focus, actual exposure is carried out to the second test mask version, is obtained several
Second test actual exposure figure, the second test actual exposure figure include that the first label of corresponding test badge figure exposes
Light figure；When the first label exposure figure is consistent with target detection label exposure figure, exposure energy is obtained as exposure energy
Measure extreme value E0；The size of the first label exposure figure is obtained in exposure energy extreme value E0When with depth of focus variation relation；Described in acquisition
In variation relation, the depth of focus of the maximum of points of the size of the first label exposure figure is as exposure depth of focus extreme value f0。
It should be noted that the target figure that target detection label exposure figure refers to as the first label exposure figure design
Shape structure.
In one embodiment, EδFor E03%~4%.
In the present embodiment, EδFor E03%.
In one embodiment, the fφIt is 40 nanometers~45 nanometers.
In the present embodiment, fφIt is 40 nanometers.
In conjunction with reference Fig. 4 and Fig. 5, Fig. 5 is the schematic diagram of amending unit B in Fig. 4, in exposure energy extreme value E0It is burnt with exposure
Deep extreme value f0Under conditions of, OPC amendment is carried out to sub- targeted graphical 100, obtains initial correction figure 120.
Carrying out the modified method of the OPC includes: to provide OPC correction model；According to OPC correction model to sub- targeted graphical
It is modified, obtains intermediate correction pattern；Second analogue exposure is carried out to intermediate correction pattern, obtains the second analogue exposure figure
Shape, the exposure energy of the second analogue exposure are E0, the depth of focus of the second analogue exposure is f0；According to the second analogue exposure figure and mesh
Positional shift between shape of marking on a map obtains edge placement error；If edge placement error is greater than second threshold, repaired according to OPC
Positive model is modified intermediate correction pattern, until edge placement error is less than or equal to second threshold；When error is corrected at edge
When less than or equal to second threshold, using intermediate correction pattern as initial correction figure.
Initial correction figure 120 includes several adjacent initial correction unit Bs for respectively corresponding graphic element A, Mei Gechu
The sub- initial correction figure of several corresponding sub-goal figures 100 is all had in beginning amending unit B.
The acquisition methods of the OPC correction model include: to provide the first test mask version, in the first test mask version
With several first resolution charts；First resolution chart is exposed, the first test actual exposure figure is obtained；It is surveyed to first
The size of examination actual exposure figure measures, and obtains the first test data；Analogue exposure is carried out to the first resolution chart, is obtained
First test simulation exposure figure；The size of first test simulation exposure figure is measured, the second test data is obtained；It will
First test data and the second test data is compared and the Fitting Calculation, obtains OPC correction model.
With reference to Fig. 6, the first analogue exposure several times is carried out to initial correction figure 120 under several conditions of exposures, is obtained
Several first analogue exposure figures under several conditions of exposures, in several conditions of exposures of the first analogue exposure, Partial exposure
The exposure energy of condition is E0, the exposure energy of Partial exposure condition is E0+Eδ, the exposure energy of Partial exposure condition is E0-Eδ,
The depth of focus of Partial exposure condition is f0, the depth of focus of Partial exposure condition is f0-fφ, the depth of focus of Partial exposure condition is f0+fφ。
Depth of focus is used to characterize the position of focus in conditions of exposure.
In the present embodiment, during carrying out first analogue exposure, several conditions of exposures of the first analogue exposure
Including the first conditions of exposure to the 9th conditions of exposure；The exposure of first conditions of exposure, the second conditions of exposure and third conditions of exposure
Energy is E0, the depth of focus of the first conditions of exposure is f0, the depth of focus of the second conditions of exposure is f0-fφ, the depth of focus of third conditions of exposure
For f0+fφ；The exposure energy of 4th conditions of exposure, the 5th conditions of exposure and the 6th conditions of exposure is E0-Eδ, the 4th exposure article
The depth of focus of part is f0, the depth of focus of the 5th conditions of exposure is f0-fφ, the depth of focus of the 6th conditions of exposure is f0+f0；7th conditions of exposure,
The exposure energy of 8th conditions of exposure and the 9th conditions of exposure is E0+Eδ, the depth of focus of the 7th conditions of exposure is f0, the 8th exposure
The depth of focus of condition is f0-fφ, the depth of focus of the 9th conditions of exposure is f0+fφ。
In the present embodiment, several first analogue exposure figures include the first exposure figure 131, the second exposure figure
132, third exposure figure (not shown), the 4th exposure figure (not shown), the 5th exposure figure (not shown), the 6th exposure diagram
Shape (not shown), the 7th exposure figure (not shown), the 8th exposure figure (not shown) and the 9th exposure figure 139.
First exposure figure 131 be under the first conditions of exposure to initial correction figure 120 carry out the first analogue exposure and
It obtains.Second exposure figure 132 is to carry out the first analogue exposure to initial correction figure 120 under the second conditions of exposure and obtain
It arrives.Third exposure figure is to carry out the first analogue exposure to initial correction figure 120 under third conditions of exposure and obtain.4th
Exposure figure is to carry out the first analogue exposure to initial correction figure 120 under the 4th conditions of exposure and obtain.5th exposure diagram
Shape is to carry out the first analogue exposure to initial correction figure 120 under the 5th conditions of exposure and obtain.6th exposure figure be
The first analogue exposure is carried out to initial correction figure 120 under 6th conditions of exposure and is obtained.7th exposure figure is to expose the 7th
The first analogue exposure is carried out to initial correction figure 120 under the conditions of light and is obtained.8th exposure figure is in the 8th conditions of exposure
Under to initial correction figure 120 carry out the first analogue exposure and obtain.9th exposure figure 139 is right under the 9th conditions of exposure
Initial correction figure 120 carries out the first analogue exposure and obtains.
Then, detection mark position, the corresponding figure of the detection mark position are obtained in each first analogue exposure figure
Shape characteristic size direction size outside first threshold range.
The size that the corresponding figure of mark position is detected in characteristic size direction refers to: the first analogue exposure figure
Size on the characteristic size direction of detection mark position.
In one embodiment, the first threshold range is [a ,+∞], wherein a is greater than zero；Detect mark position pair
When size of the figure answered in characteristic size direction is outside first threshold range, the corresponding figure of detection mark position is in feature ruler
The size in very little direction is less than a；When the corresponding figure of detection mark position characteristic size direction size in first threshold range
When interior, size of the corresponding figure of detection mark position in characteristic size direction is more than or equal to a.
The method for obtaining the detection mark position in each first analogue exposure figure includes: by each first analogue exposure figure
It is divided into several detection zones；Minimum dimension position of the figure on characteristic size direction in each detection zone is obtained, right
In the detection zone answered, the figure at minimum dimension position has minimum dimension；Compare the minimum ruler at each minimum dimension position
Very little and first threshold range；If outside first threshold range, the corresponding minimum dimension position of minimum dimension is made for minimum dimension
To detect mark position.
Then, the size and first threshold range according to the corresponding figure of detection mark position in characteristic size direction is right
The corresponding initial correction figure of detection mark position is corrected at least once, until the figure of detection mark position is in feature ruler
The size in very little direction obtains correction pattern in first threshold range.
It is illustrated below using carrying out modified twice to the corresponding initial correction figure of detection mark position as example.Specifically
, size and first threshold range according to the corresponding figure of detection mark position in characteristic size direction, to detection marker bit
It sets corresponding initial correction figure and carries out first time amendment；After correcting for the first time, repeat to carry out several times initial correction figure
First analogue exposure, the ruler in the first analogue exposure figure in the figure of detection marked locations accordingly in characteristic size direction
It is very little outside first threshold range；Later, according to the corresponding figure of detection mark position in the size in characteristic size direction and first
Threshold range carries out second to the corresponding initial correction figure of detection mark position and corrects；After second is corrected, repeat to first
Beginning correction pattern carries out the first analogue exposure several times, in the figure of detection marked locations accordingly in the first analogue exposure figure
Shape characteristic size direction size in first threshold range.
Specifically, when the corresponding figure of detection mark position characteristic size direction size in first threshold range
When, using initial correction figure as correction pattern.
In the present embodiment, the first analogue exposure is carried out to initial correction figure under several conditions of exposures, in the first simulation
In several conditions of exposures of exposure, exposure energy includes E0、E0+EδAnd E0-Eδ, depth of focus includes f0、f0-fφAnd f0+fφ, therefore
Detection mark position is determined under the conditions of exposure of large range of exposure energy and large range of depth of focus.Detection is marked later
The corresponding initial correction figure in position is modified, until size of the corresponding figure of detection mark position in characteristic size direction
In first threshold range.The correction pattern obtained in this way exposes during actual exposure although actual exposure energy deviates
Light energy extreme value E0Larger, the process window of depth of focus is also larger, meets the requirement of technological design.
The present invention also provides a kind of production methods of mask plate, comprising: according to above method acquisition after pretreatment
Correction pattern make mask plate.
In the present embodiment, mask plate is made according to the correction pattern that above-mentioned optical adjacent correction method obtains.To exposure mask
During version carries out actual exposure, although exposure energy deviates exposure energy extreme value E0It is larger, the process window of depth of focus also compared with
Greatly, meet the requirement of technological design.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (10)
1. a kind of optical adjacent correction method characterized by comprising
Targeted graphical is provided, there are several sub-goal figures in targeted graphical, sub-goal figure has characteristic size direction；
Obtain exposure energy extreme value E0, exposure depth of focus extreme value f0, exposure deflection energy EδDepth of focus f is deviated with exposureφ；
In exposure energy extreme value E0With exposure depth of focus extreme value f0Under conditions of, OPC amendment is carried out to sub- targeted graphical, is obtained initial
Correction pattern；
The first analogue exposure several times is carried out to initial correction figure under several conditions of exposures, is obtained under several conditions of exposures
Several first analogue exposure figures, in several conditions of exposures of the first analogue exposure, the exposure energy of Partial exposure condition is
E0, the exposure energy of Partial exposure condition is E0+Eδ, the exposure energy of Partial exposure condition is E0-Eδ, the coke of Partial exposure condition
Depth is f0, the depth of focus of Partial exposure condition is f0-fφ, the depth of focus of Partial exposure condition is f0+fφ；
Detection mark position is obtained in each first analogue exposure figure, the corresponding figure of the detection mark position is in feature ruler
The size in very little direction is outside first threshold range；
Size and first threshold range according to the corresponding figure of detection mark position in characteristic size direction, to detection marker bit
It sets corresponding initial correction figure to be corrected at least once, until ruler of the figure of detection mark position in characteristic size direction
It is very little in first threshold range, obtain correction pattern.
2. optical adjacent correction method according to claim 1, which is characterized in that carrying out first analogue exposure
In the process, the conditions of exposure of the first analogue exposure includes the first conditions of exposure to the 9th conditions of exposure；First conditions of exposure, second
The exposure energy of conditions of exposure and third conditions of exposure is E0, the depth of focus of the first conditions of exposure is f0, the coke of the second conditions of exposure
Depth is f0-fφ, the depth of focus of third conditions of exposure is f0+fφ；4th conditions of exposure, the 5th conditions of exposure and the 6th conditions of exposure
Exposure energy is E0-Eδ, the depth of focus of the 4th conditions of exposure is f0, the depth of focus of the 5th conditions of exposure is f0-fφ, the 6th exposure article
The depth of focus of part is f0+fφ；The exposure energy of 7th conditions of exposure, the 8th conditions of exposure and the 9th conditions of exposure is E0+Eδ, the
The depth of focus of seven conditions of exposures is f0, the depth of focus of the 8th conditions of exposure is f0-fφ, the depth of focus of the 9th conditions of exposure is f0+fφ。
3. optical adjacent correction method according to claim 1, which is characterized in that fφIt is 40 nanometers~45 nanometers.
4. optical adjacent correction method according to claim 1, which is characterized in that EδFor E03%~4%.
5. optical adjacent correction method according to claim 1, which is characterized in that the first threshold range be [a ,+
∞], wherein a is greater than zero；The corresponding figure of mark position is detected in the size in characteristic size direction outside first threshold range
When, size of the corresponding figure of detection mark position in characteristic size direction is less than a；When the corresponding figure of detection mark position exists
When the size in characteristic size direction is in first threshold range, ruler of the corresponding figure of detection mark position in characteristic size direction
It is very little to be more than or equal to a.
6. optical adjacent correction method according to claim 5, which is characterized in that obtain in each first analogue exposure figure
The method of detection mark position include: that each first analogue exposure figure is divided into several detection zones；Obtain each detection
Minimum dimension position of the figure on characteristic size direction in region, in corresponding detection zone, at minimum dimension position
Figure has minimum dimension；Compare the minimum dimension and first threshold range at each minimum dimension position；If minimum dimension is
Outside one threshold range, then using the corresponding minimum dimension position of minimum dimension as detection mark position.
7. optical adjacent correction method according to claim 1, which is characterized in that carry out the modified method packet of the OPC
It includes: OPC correction model is provided；Sub- targeted graphical is modified according to OPC correction model, obtains intermediate correction pattern；Centering
Between correction pattern carry out the second analogue exposure, obtain the second analogue exposure figure, the exposure energy of the second analogue exposure is E0, the
The depth of focus of two analogue exposures is f0；According to the positional shift between the second analogue exposure figure and targeted graphical, obtains to edge and put
Set error；If edge placement error is greater than second threshold, intermediate correction pattern is modified according to OPC correction model, directly
It is less than or equal to second threshold to edge placement error；When edge, amendment error is less than or equal to second threshold, by intermediate correction map
Shape is as initial correction figure.
8. optical adjacent correction method according to claim 7, which is characterized in that the acquisition side of the OPC correction model
Method includes: to provide the first test mask version, has several first resolution charts in the first test mask version；It tests first
Figure is exposed, and obtains the first test actual exposure figure；The size of first test actual exposure figure is measured, is obtained
Obtain the first test data；Analogue exposure is carried out to the first resolution chart, obtains the first test simulation exposure figure；It tests first
The size of analogue exposure figure measures, and obtains the second test data；First test data and the second test data are carried out
Compare and the Fitting Calculation, obtains OPC correction model.
9. optical adjacent correction method according to claim 1, which is characterized in that obtain exposure energy extreme value E0And exposure
Depth of focus extreme value f0Method include: that the second test mask version is provided, there is in the second test mask version test badge figure
And main graphic；The target detection for providing test badge figure marks exposure figure；In different exposure energies and different exposure depths of focus
Under conditions of, actual exposure is carried out to the second test mask version, obtains several second test actual exposure figures, described second surveys
Examination actual exposure figure includes the first label exposure figure of corresponding test badge figure；When the first label exposure figure and target
When test badge exposure figure is consistent, exposure energy is obtained as exposure energy extreme value E0；Obtain the first label exposure figure
Size is in exposure energy extreme value E0When with depth of focus variation relation；It obtains in the variation relation, the first label exposure figure
The depth of focus of the maximum of points of size is as exposure depth of focus extreme value f0。
10. a kind of production method of mask plate characterized by comprising according to claim 1 to 9 any one optical adjacents
The correction pattern that modification method obtains makes mask plate.
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