CN112382553A - Double-layer reaction cavity structure - Google Patents
Double-layer reaction cavity structure Download PDFInfo
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- CN112382553A CN112382553A CN202011281050.3A CN202011281050A CN112382553A CN 112382553 A CN112382553 A CN 112382553A CN 202011281050 A CN202011281050 A CN 202011281050A CN 112382553 A CN112382553 A CN 112382553A
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- cavity
- flange
- furnace
- inlayer
- double
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 14
- 239000000498 cooling water Substances 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 28
- 238000000034 method Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000011247 coating layer Substances 0.000 abstract description 2
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000010453 quartz Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32899—Multiple chambers, e.g. cluster tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of semiconductors and solar photovoltaic cells, in particular to a double-layer reaction cavity structure, which aims to solve the problem that the service life of a reaction cavity is limited in the prior art and has the technical key points that: including inlayer cavity and outer cavity, the inlayer cavity with outer cavity coaxial setting to length equals, the inlayer cavity is located outer cavity is inboard, outer cavity length direction both ends are provided with fire door flange and stove tail flange respectively, are used for fixing inlayer cavity and outer cavity. Through the arrangement of the inner cavity and the outer cavity, the outer cavity is used for vacuumizing and bearing pressure, the inner cavity is used for bearing film growth and does not bear vacuum pressure, the outer cavity is free of the influence of a coating layer in the using process, the inner cavity does not bear vacuum pressure, and the service life of the double-layer reaction cavity can be effectively prolonged.
Description
Technical Field
The invention relates to the technical field of semiconductor and solar photovoltaic cell manufacturing, in particular to a double-layer reaction cavity structure.
Background
The diffusion equipment is one of important equipment of semiconductor device process equipment, is widely applied to industries such as production of integrated circuits, power electronics and solar cells, and is mainly used for doping monocrystalline silicon wafers and polycrystalline silicon wafers to form PN junctions in the photovoltaic industry. The annealing equipment mainly performs the functions of annealing, activation and the like.
The low-pressure chemical vapor deposition (LPCVD) equipment is mainly used for film growth and can be used for film growth of intrinsic amorphous silicon, doped amorphous silicon, silicon oxide and the like.
The Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment mainly plays a role in the process flow of the solar photovoltaic cell and can be used for growing films of silicon nitride, aluminum oxide, intrinsic silicon, doped amorphous silicon and the like.
One of the common characteristics of the diffusion equipment, the annealing equipment, the LPCVD equipment and the PECVD equipment is that a cavity is formed to enable the silicon wafer to be processed in the cavity. However, the conventional furnace tube is a single layer and is mostly made of quartz. The furnace tube wall can be gradually coated with a thick film along with the operation process, and because the property of the film material is different from that of quartz, for example, amorphous silicon is coated on LPCVD equipment, stress is generated between the thick film and the quartz, and under the vacuum degree of dozens of millitorr, the pressure born by the furnace tube is large, the furnace tube is easy to crack, the process failure is caused, the reworking and even the breakage of a process silicon wafer are caused, and a quartz boat, a thermocouple, an air inlet tube and the like in the furnace tube are damaged. The equipment is shut down for maintenance, and the broken quartz can damage the thermal field to cause secondary damage. .
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the defect of limited service life of the cavity in the prior art, thereby providing a double-layer reaction cavity structure.
The technical purpose of the invention is realized by the following technical scheme:
the utility model provides a double-deck reaction cavity structure, includes inlayer cavity and outer cavity, the inlayer cavity with outer cavity is coaxial to length equals, the inlayer cavity is located outer cavity is inboard, outer cavity length direction both ends are provided with stove mouth flange and stove tail flange respectively, are used for fixing inlayer cavity and outer cavity.
Preferably, the furnace mouth flange includes a furnace mouth inner flange and a furnace mouth outer flange, a first seal ring is arranged between the furnace mouth inner flange and the furnace mouth outer flange, wherein the furnace mouth outer flange is located at the end part of the outer cavity, the furnace mouth inner flange is located at the side surface of one side of the outer cavity, which is pointed by the furnace mouth outer flange, the furnace mouth inner flange is used for fixing the outer cavity on the rack, and a cooling water pipeline is arranged at the side of the furnace mouth inner flange, which is close to the first seal ring.
Preferably, a buffer block is arranged on the furnace mouth outer flange and is positioned between the furnace mouth outer flange and the outer layer cavity.
Preferably, a second sealing ring is further arranged between the furnace mouth outer flange and the inner cavity, and the second sealing cavity is used for reducing gas circulation between the inner cavity and the outer cavity.
Preferably, the periphery of the furnace tail flange is connected with a furnace tail cover, the furnace tail flange is used for connecting the furnace tail cover and the inner layer cavity, and a heat insulation plate is arranged at one end, pointing to the furnace tail flange, of the inner layer cavity.
Preferably, a support ring is arranged in the inner-layer cavity, and the support ring is fixedly arranged on one side of the furnace tail flange, which points to the inner-layer cavity.
Preferably, a nitrogen pipeline is arranged on the furnace tail cover and used for introducing nitrogen into the outer layer cavity and the middle of the inner layer cavity.
Above-mentioned double-deck reaction cavity structure, it is through the setting of inside and outside two-layer cavity for outer cavity is used for the evacuation to bear pressure, inlayer cavity is used for accepting the film growth, does not bear vacuum pressure, uses guo morning, and outer cavity does not have the influence on coating film layer, and the inlayer cavity does not bear vacuum pressure, can promote double-deck reaction cavity's life effectively.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic structural diagram of a double-layer reaction chamber structure according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a double-layer reaction chamber structure according to an embodiment of the present invention.
Description of reference numerals:
1. an inner cavity; 11. a heat insulation plate; 12. a support ring; 2. an outer cavity; 21. an air inlet; 22. a water inlet; 23. a water outlet; 24. a cooling water connecting pipe; 3. a furnace mouth flange; 31. an inner flange of the furnace mouth; 311. a cooling water line; 32. an outer flange of the furnace mouth; 321. a buffer block; 322. a second seal ring; 33. a first seal ring; 4. a furnace tail flange; 5. a furnace tail cover; 51. a nitrogen gas pipeline; 52. and a third sealing ring.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, a double-layer reaction cavity structure includes an inner layer cavity 1 and an outer layer cavity 2, the inner layer cavity 1 and the outer layer cavity 2 are coaxially disposed and have equal lengths, the inner layer cavity 1 is located inside the outer layer cavity 2, and a furnace opening flange 3 and a furnace tail flange 4 are respectively disposed at two ends of the outer layer cavity 2 in the length direction and are used for fixing the inner layer cavity 1 and the outer layer cavity 2. The outer cavity 2 is provided with an air inlet 21, a water inlet 22, a water outlet 23 and a cooling water connecting pipe 24 at one end of the outer cavity, which is provided with the furnace opening flange 3, wherein the water inlet 22 and the water outlet 23 are respectively used for the inlet and the outlet of cooling water, and the cooling water connecting pipe 24 is in a U-shaped arrangement and used for the transmission of the cooling water of the inner cavity 1 and the outer cavity 2. In an embodiment, the outer cavity 2 is made of quartz, the inner cavity 1 is made of metal or quartz, the outer cavity 2 is used for vacuumizing and bearing pressure, and the inner cavity 1 is used for supporting the growth of a thin film.
Referring to fig. 2, in an embodiment, the furnace opening flange 3 includes a furnace opening inner flange 31 and a furnace opening outer flange 32, a first sealing ring 33 is disposed between the furnace opening inner flange 31 and the furnace opening outer flange 32, wherein the furnace opening outer flange 32 is located at an end of the outer cavity 2, the furnace opening inner flange 31 is located on a side surface of the furnace opening outer flange 32, which faces to the outer cavity 2, the furnace opening inner flange 31 is used for fixing the outer cavity 2 on a rack, and a cooling water pipeline 311 is disposed on a side of the furnace opening inner flange 31, which is close to the first sealing ring 33. The furnace mouth outer flange 32 is fixedly arranged on the furnace mouth inner flange 31, a cooling water pipeline 311 is arranged in the furnace mouth outer flange 32, and the cooling water pipeline 311 on the furnace mouth inner flange 31 and the cooling water pipeline 311 on the furnace mouth outer flange 32 are respectively communicated with the cooling water connecting pipe 24. The furnace mouth outer flange 32 and the furnace mouth inner flange 31 are used for sealing the outer layer cavity 2 by extruding the first sealing ring 33.
In an embodiment, a buffer block 321 is arranged on the furnace mouth outer flange 32, and the buffer block 321 is located between the furnace mouth outer flange 32 and the outer cavity 2 and used for avoiding collision between the furnace mouth outer flange 32 and the outer cavity 2.
Referring to fig. 2, in an embodiment, a second sealing ring 322 is further disposed between the furnace mouth outer flange 32 and the inner cavity 1, and the second sealing ring 322 is used for reducing gas circulation between the inner cavity 1 and the outer cavity 2.
Referring to fig. 2, in an embodiment, a furnace tail cover 5 is connected to an outer periphery of the furnace tail flange 4, the furnace tail flange 4 is used for connecting the furnace tail cover 5 and the inner cavity 1, a heat insulation plate 11 is disposed at one end of the inner cavity 1, which faces the furnace tail flange 4, and the heat insulation plate 11 is used for blocking heat in the inner cavity 1 to reduce a temperature of the furnace tail cover 5. In an embodiment, a support ring 12 is disposed in the inner cavity 1, the support ring 12 is fixedly disposed on a side of the furnace tail flange 4, which faces the inner cavity 1, and the support ring 12 is used for supporting the inner cavity 1 to prevent the inner cavity 1 from falling on the outer cavity 2. In an embodiment, the furnace tail cover 5 is provided with a nitrogen pipeline 51, and the nitrogen pipeline 51 is used for introducing nitrogen into the middle of the outer cavity 2 and the inner cavity 1 so as to prevent the reaction gas of the inner cavity 1 from entering the interlayer of the inner cavity 2 and the outer cavity 2.
In one embodiment, the furnace tail cover 5 is provided with a third sealing ring 52, and the third sealing ring 52 is attached to the furnace tail cover 5 and the furnace tail flange 4.
The application provides a double-deck reaction cavity structure, its setting through inside and outside two-layer cavity for outer cavity 2 is used for the evacuation to bear pressure, inlayer cavity 1 is used for accepting the film growth, does not bear vacuum pressure, uses guo morning, and the influence on outer cavity 2 non-coating layer, inlayer cavity 1 does not bear vacuum pressure, can promote double-deck reaction cavity's life effectively.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (7)
1. A double-layer reaction cavity structure is characterized in that: including inlayer cavity (1) and outer cavity (2), inlayer cavity (1) with outer cavity (2) coaxial setting to length equals, inlayer cavity (1) is located outer cavity (2) are inboard, outer cavity (2) length direction both ends are provided with stove mouthful flange (3) and stove tail flange (4) respectively, are used for fixing inlayer cavity (1) and outer cavity (2).
2. The double-layer reaction chamber structure of claim 1, wherein: the furnace mouth flange (3) comprises a furnace mouth inner flange (31) and a furnace mouth outer flange (32), the furnace mouth inner flange (31) and a first sealing ring (33) are arranged between the furnace mouth outer flange (32), the furnace mouth outer flange (32) is located at the end part of the outer cavity (2), the furnace mouth inner flange (31) is located at the side surface of one side of the outer cavity (2), the furnace mouth inner flange (31) is used for fixing the outer cavity (2) on the rack, and the furnace mouth inner flange (31) is close to the cooling water pipeline (311) arranged on one side of the first sealing ring (33).
3. The double-layer reaction chamber structure of claim 2, wherein: the furnace mouth outer flange (32) is provided with a buffer block (321), and the buffer block (321) is positioned between the furnace mouth outer flange (32) and the outer layer cavity (2).
4. The double-layer reaction chamber structure of claim 3, wherein: the furnace mouth outer flange (32) with still be provided with second sealing washer (322) between inlayer cavity (1), the second seal chamber is used for reducing the gas circulation between inlayer cavity (1) and outer cavity (2).
5. The double-layer reaction chamber structure of claim 4, wherein: the furnace tail flange (4) periphery is connected with furnace tail lid (5), furnace tail flange (4) are used for connecting furnace tail lid (5) reach inlayer cavity (1), inlayer cavity (1) is directional furnace tail flange (4) one end is provided with heat insulating board (11).
6. The double-layer reaction chamber structure of claim 5, wherein: a support ring (12) is arranged in the inner layer cavity (1), and the support ring (12) is fixedly arranged on one side, pointing to the inner layer cavity (1), of the furnace tail flange (4).
7. The double-layer reaction chamber structure of claim 6, wherein: the furnace tail cover (5) is provided with a nitrogen pipeline (51), and the nitrogen pipeline (51) is used for introducing nitrogen into the outer layer cavity (2) and the middle of the inner layer cavity (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011281050.3A CN112382553A (en) | 2020-11-16 | 2020-11-16 | Double-layer reaction cavity structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011281050.3A CN112382553A (en) | 2020-11-16 | 2020-11-16 | Double-layer reaction cavity structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112382553A true CN112382553A (en) | 2021-02-19 |
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ID=74584805
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011281050.3A Pending CN112382553A (en) | 2020-11-16 | 2020-11-16 | Double-layer reaction cavity structure |
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| Country | Link |
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| CN (1) | CN112382553A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113088935A (en) * | 2021-03-30 | 2021-07-09 | 上海华力微电子有限公司 | Fixed base, LPCVD boiler tube and LPCVD equipment |
| CN116732495A (en) * | 2023-07-17 | 2023-09-12 | 赛瑞达智能电子装备(无锡)有限公司 | LPCVD double-layer furnace tube and control method thereof |
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|---|---|---|---|---|
| KR20010046221A (en) * | 1999-11-11 | 2001-06-05 | 윤종용 | Device for cooling flange of horizontal type furnace for Low Pressure Chemical Vaper Deposition |
| CN109338333A (en) * | 2018-11-30 | 2019-02-15 | 湖南红太阳光电科技有限公司 | A kind of tubular type LPCVD vacuum reaction chamber |
| CN111074239A (en) * | 2020-01-21 | 2020-04-28 | 赛姆柯(苏州)智能科技有限公司 | LPCVD (low pressure chemical vapor deposition) double-material vacuum reaction chamber |
| CN111394712A (en) * | 2020-04-27 | 2020-07-10 | 青岛赛瑞达电子装备股份有限公司 | Double-layer quartz process chamber structure |
| CN211339680U (en) * | 2019-09-04 | 2020-08-25 | 谭百世Ip有限公司 | Double-layer LPCVD furnace |
| CN213845292U (en) * | 2020-11-16 | 2021-07-30 | 拉普拉斯(无锡)半导体科技有限公司 | Double-layer reaction cavity structure |
-
2020
- 2020-11-16 CN CN202011281050.3A patent/CN112382553A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010046221A (en) * | 1999-11-11 | 2001-06-05 | 윤종용 | Device for cooling flange of horizontal type furnace for Low Pressure Chemical Vaper Deposition |
| CN109338333A (en) * | 2018-11-30 | 2019-02-15 | 湖南红太阳光电科技有限公司 | A kind of tubular type LPCVD vacuum reaction chamber |
| CN211339680U (en) * | 2019-09-04 | 2020-08-25 | 谭百世Ip有限公司 | Double-layer LPCVD furnace |
| CN111074239A (en) * | 2020-01-21 | 2020-04-28 | 赛姆柯(苏州)智能科技有限公司 | LPCVD (low pressure chemical vapor deposition) double-material vacuum reaction chamber |
| CN111394712A (en) * | 2020-04-27 | 2020-07-10 | 青岛赛瑞达电子装备股份有限公司 | Double-layer quartz process chamber structure |
| CN213845292U (en) * | 2020-11-16 | 2021-07-30 | 拉普拉斯(无锡)半导体科技有限公司 | Double-layer reaction cavity structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113088935A (en) * | 2021-03-30 | 2021-07-09 | 上海华力微电子有限公司 | Fixed base, LPCVD boiler tube and LPCVD equipment |
| CN116732495A (en) * | 2023-07-17 | 2023-09-12 | 赛瑞达智能电子装备(无锡)有限公司 | LPCVD double-layer furnace tube and control method thereof |
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