CN111074239A - LPCVD (low pressure chemical vapor deposition) double-material vacuum reaction chamber - Google Patents
LPCVD (low pressure chemical vapor deposition) double-material vacuum reaction chamber Download PDFInfo
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- CN111074239A CN111074239A CN202010070654.7A CN202010070654A CN111074239A CN 111074239 A CN111074239 A CN 111074239A CN 202010070654 A CN202010070654 A CN 202010070654A CN 111074239 A CN111074239 A CN 111074239A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 114
- 238000004518 low pressure chemical vapour deposition Methods 0.000 title claims abstract description 41
- 239000000463 material Substances 0.000 title claims abstract description 29
- 238000007789 sealing Methods 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000010453 quartz Substances 0.000 claims description 14
- 239000007769 metal material Substances 0.000 claims description 9
- 230000009977 dual effect Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 18
- 230000008569 process Effects 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 239000010703 silicon Substances 0.000 abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 230000035939 shock Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 22
- 239000010408 film Substances 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
Abstract
The invention discloses an LPCVD (low pressure chemical vapor deposition) double-material vacuum reaction chamber which comprises a reaction chamber, an air inlet assembly and an air outlet pipe, wherein the air inlet assembly is connected with an external air source; the air inlet assembly comprises at least one left air inlet pipe and at least one right air inlet pipe, the air inlet of each left air inlet pipe is arranged at one end part of the reaction chamber in the length direction, the air inlet of each right air inlet pipe is arranged at the other end part of the reaction chamber in the length direction, and a plurality of air outlet holes are formed in the left air inlet pipe and the right air inlet pipe. According to the vacuum reaction chamber designed by the invention, the gas inlet pipes are arranged at the two ends of the reaction chamber for gas diffusion, so that the gas in the reaction chamber is widely and uniformly dispersed, the gas outlet is stable, the uniformity and the process quality of a silicon wafer film are improved, and the product yield is improved; the vacuum reaction chamber adopts a double-layer structure, has excellent vacuum property and strong shock resistance, improves the strength of the whole reaction chamber and prolongs the service life.
Description
Technical Field
The invention relates to the field of LPCVD (low pressure chemical vapor deposition) vacuum reaction chambers, in particular to an LPCVD double-material vacuum reaction chamber.
Background
As the development of renewable energy is concerned, the solar photovoltaic power generation is popularized rapidly, and with the reduction of the characteristic size of the semiconductor process and the continuous improvement of the requirements on the uniformity and the film thickness error of the film, the LPCVD has excellent step coverage, good composition and structural control and higher deposition rate, and the method does not need ion-carrying gas, thereby greatly reducing the particle pollution source and being widely applied to the film deposition process of the semiconductor industry.
LPCVD (Low Pressure Chemical Vapor deposition) equipment is one of Chemical Vapor Deposition (CVD) equipment, which is used in the industries of integrated circuits, power electronics, photovoltaics, micro electro mechanical systems, and the like, and generates a solid reactant through a Chemical reaction of mixed gas under a Low-Pressure high-temperature condition, and deposits the solid reactant on the surface of a silicon wafer to form a thin film. In the photovoltaic industry, LPCVD is mainly applied to polycrystalline silicon, amorphous silicon and SiO2、Si3N4Growth and deposition of various films such as phosphosilicate glass (PSG) and boron-doped phosphosilicate glass (BPSG). As one of the CVD equipment, its most important function or final target is still the CVD reaction, and thus the reaction chamber is the core of the whole equipment and also the core point of the design.
The basic principle of LPCVD process is to deposit one or several gaseous substances on the surface of substrate by thermal decomposition or chemical reaction under relatively low pressure and activation with heat energy. During the reaction, the raw materials for forming the film are supplied in a gaseous form, and the reaction tail gas is exhausted by an exhaust system. The substrate is heated to a proper temperature by heat energy, and gas molecules are excited and decomposed to promote the reaction. The decomposition product or reaction product is deposited on the surface of the substrate to form a film.
In the current stage, the vacuum reaction chambers are all single-layer quartz tubes, certain extrusion force is generated instantly when the vacuum reaction chambers contact the quartz tubes in the processes of pushing boats and closing the furnace door, and when power failure or temperature reduction maintenance is met, cracks or damage can be generated at the places where the inner walls of the quartz tubes are covered with polycrystalline silicon, so that the single-layer quartz tubes are low in service life and complicated to disassemble and replace; the quartz vacuum chamber has multiple processing procedures, the precision is difficult to meet the design requirement, and the time-consuming period is long.
The existing method is quartz-sealing ring-metal contact, the sealing ring is easy to age at high temperature, the internal temperature of the LPCVD reaction chamber is 750 ℃, the applicable temperature of a furnace mouth sealing ring (246 type fluororubber O-shaped sealing ring) is about 300-.
In addition, the existing air inlet mode has the condition that the flow velocity of the air outlet is gradually reduced from the air inlet end to the tail part of the air pipe, so that the uniformity and the process quality of the silicon wafer film are influenced.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides an LPCVD double-material vacuum reaction chamber, which improves the uniformity and the process quality of a silicon wafer film, and adopts the following technical scheme:
the invention provides an LPCVD (low pressure chemical vapor deposition) dual-material vacuum reaction chamber, which comprises a reaction chamber with a hollow structure, an air inlet assembly arranged in the reaction chamber and an air outlet pipe arranged at the end part of the reaction chamber, wherein the air inlet assembly is connected with an external air source;
the air inlet assembly comprises at least one left air inlet pipe and at least one right air inlet pipe, the air inlet of each left air inlet pipe is arranged at one end part of the reaction chamber in the length direction, the air inlet of each right air inlet pipe is arranged at the other end part of the reaction chamber in the length direction, the left air inlet pipe and the right air inlet pipe both extend along the length direction of the reaction chamber, and a plurality of air outlet holes arranged at intervals are formed in the left air inlet pipe and the right air inlet pipe; the end part of the reaction chamber matched with the furnace door is sleeved with a sealing flange made of a metal material, and one end face of the sealing flange is used for abutting against the furnace door.
Further, a groove along the circumferential direction is arranged on the circumferential outer side part of the sealing flange, which is far away from the reaction chamber.
Furthermore, the air inlet assembly further comprises air pipe connectors respectively arranged at two ends of the reaction chamber in the length direction, one end of each air pipe connector is connected with the left air inlet pipe or the right air inlet pipe, the other end of each air pipe connector is connected with an external air source, and at least one air pipe connector is arranged at the outer side of the circumference of the sealing flange.
Furthermore, a supporting piece used for supporting the left air inlet pipe and the right air inlet pipe is arranged in the reaction chamber, one end of the supporting piece is in contact with the inner side wall of the inner-layer cavity, and the other end of the supporting piece is in contact with the left air inlet pipe or the right air inlet pipe.
Further, the left air inlet pipe and the right air inlet pipe are connected through a connecting piece.
Further, the connecting piece is for relative first connecting plate and the second connecting plate that sets up and setting up be in third connecting plate between first connecting plate and the second connecting plate, first connecting plate and second connecting plate all are used for conflicting with adjacent left intake pipe and right intake pipe respectively
Further, the third connecting plate is curved, and the side edge of the third connecting plate in the width direction is arc-shaped.
Further, the outer layer cavity is a cylindrical structure with one end in the length direction being closed and the other end being open, and the inner layer cavity is a cylindrical structure with two ends in the length direction being open.
Further, a metal plate for sealing is arranged at one end of the outer-layer cavity, and the metal plate is welded with the reaction chamber, so that one end of the outer-layer cavity is of a closed structure.
Furthermore, the end part of the reaction chamber, which is provided with the metal plate, is provided with a positioning piece matched with an external auxiliary assembly tool and a thermocouple for detecting the temperature in the reaction chamber.
The technical scheme provided by the invention has the following beneficial effects:
a. according to the LPCVD double-material vacuum reaction chamber designed by the invention, the gas inlet pipes are arranged at the two ends of the reaction chamber for gas diffusion, so that the gas in the reaction chamber is widely and uniformly dispersed, the gas outlet is stable, the uniformity and the process quality of a silicon wafer film are improved, and the product yield is improved;
b. the LPCVD double-material vacuum reaction chamber designed by the invention adopts a double-layer structure of the metal outer layer and the quartz inner layer, is convenient to process, has excellent vacuum property and strong shock resistance, improves the strength of the whole reaction chamber, further prolongs the service life of a quartz tube of the vacuum reaction chamber and prolongs the service life of the whole reaction chamber; and is convenient for transportation;
c. the LPCVD double-material vacuum reaction chamber designed by the invention has a metal-to-metal contact sealing structure, and the sealing flange has longer service life and does not need to be frequently replaced while the airtightness of the furnace door and the vacuum reaction chamber is ensured.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a perspective view of an LPCVD dual material vacuum chamber provided by an embodiment of the present invention;
FIG. 2 is a front view of an LPCVD dual material vacuum chamber provided by embodiments of the present invention;
FIG. 3 is a side view of an LPCVD dual material vacuum chamber provided by embodiments of the present invention;
FIG. 4 is a schematic view of the interior of an LPCVD dual material vacuum chamber provided by an embodiment of the present invention;
FIG. 5 is a perspective view of a sealing flange of an LPCVD dual material vacuum chamber provided by embodiments of the present invention;
FIG. 6 is a front view of a sealing flange of an LPCVD dual material vacuum chamber provided by embodiments of the present invention;
FIG. 7 is a cross-sectional view taken along direction A in FIG. 6 of a sealing flange of an LPCVD dual material vacuum chamber provided in accordance with an embodiment of the present invention.
Wherein the reference numerals include: 1-reaction chamber, 11-outer layer cavity, 12-inner layer cavity, 2-gas outlet pipe, 3-left gas inlet pipe, 4-right gas inlet pipe, 5-sealing flange, 51-groove, 52-threaded positioning hole, 6-metal plate, 7-positioning piece, 8-thermocouple, 9-gas pipe joint, 10-supporting piece, 13-external gas source and 14-silicon chip.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, apparatus, article, or device that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or device.
In an embodiment of the present invention, an LPCVD dual-material vacuum reaction chamber is provided, and a specific structure is shown in fig. 1, which includes a reaction chamber 1 having a hollow structure, an air inlet component disposed in the reaction chamber 1, and an air outlet pipe 2 disposed at an end of the reaction chamber 1, wherein the air inlet component is connected to an external air source 13, the reaction chamber 1 includes an outer-layer cavity 11 and an inner-layer cavity 12 disposed in the outer-layer cavity 11, the inner-layer cavity 12 is made of quartz material, and the outer-layer cavity 11 is made of metal material, preferably stainless steel material; the outer-layer cavity 11 is made of metal materials, so that the processing is convenient, the vacuum performance is excellent, the shock resistance is strong, the strength of the whole reaction chamber is improved, and the service life is further prolonged; and is convenient for transportation. The quartz tube has stable working environment pressure, adopts a double-layer structure (a metal outer layer and a quartz inner layer), does not have collision of an external movement mechanism, and prolongs the service life of the quartz tube in the reaction chamber. The inner cavity 12 is internally provided with a silicon wafer 14 to be processed, and is activated by heat energy at a lower pressure through introducing gas, so that the silicon wafer is subjected to thermal decomposition or chemical reaction and is deposited on the surface of the silicon wafer to form a required film. According to actual processing requirements, a distance can be kept between the outer side wall of the inner cavity 12 and the inner side wall of the outer cavity 11, or the outer side wall of the inner cavity 12 is in contact with the inner side wall of the outer cavity 11.
The specific structure of the air inlet assembly is as follows: referring to fig. 1, 2 and 4, the air intake assembly includes at least one air intake pipe, the air intake pipe includes a left air intake pipe 3 and a right air intake pipe 4, an air inlet of the left air intake pipe 3 is disposed at one end (e.g., a left end in fig. 4) of the reaction chamber 1 in the length direction of the reaction chamber, an air inlet of the right air intake pipe 4 is disposed at the other end (e.g., a right end in fig. 4) of the reaction chamber 1 in the length direction of the reaction chamber 1, the left air intake pipe 3 and the right air intake pipe 4 both extend along the length direction of the reaction chamber 1, and the left air intake pipe 3 and the right air intake pipe 4. And a plurality of air outlet holes are formed in the left air inlet pipe 3 and the right air inlet pipe 4 at intervals, and gas is discharged from the air outlet holes to the silicon wafer for processing. The air inlet of the left air inlet pipe 3 and the air inlet of the right air inlet pipe 4 are oppositely arranged, namely, the air inlet pipes are arranged on two sides for gas filling and diffusion, so that gas in the reaction chamber 1 is widely and uniformly dispersed, the area of the silicon wafer in contact with the gas in the reaction chamber is increased, referring to fig. 4, the arrow points to the gas spraying direction, the gas is stably discharged from the air inlet end to the tail part of the air inlet pipe, and the uniformity and the process quality of a silicon wafer film are improved.
The air inlet assembly further comprises air pipe joints 9 respectively arranged at two end portions (the two end portions are a left end portion and a right end portion in the figure 1) in the length direction of the reaction chamber 1, referring to figure 3, one end of each air pipe joint 9 is connected with the left air inlet pipe 3 or the right air inlet pipe 4, the other end of each air pipe joint is connected with an external air source 13, the air pipe joints 9 are arranged in one-to-one correspondence with the left air inlet pipe 3 or the right air inlet pipe 4, one left air inlet pipe 3 corresponds to one air pipe joint 9, and one right air inlet pipe 4 corresponds to one air pipe. The air pipe connector 9 can be welded at the end part of the reaction chamber or can be detachably arranged at the end part of the reaction chamber, and the air pipe connector 9 is arranged to conveniently connect an air inlet pipe and an external air source 13.
A sealing flange 5 made of a metal material is sleeved outside the end part of the reaction chamber 1 matched with the furnace door, referring to fig. 5 to 7, one end face of the sealing flange is used for abutting against the furnace door, one end face abutting against the furnace door is a sealing grinding surface (a plane structure is formed by polishing and can be completely attached to one end face of the furnace door without a gap), and the sealing flange is preferably welded and fixed with the reaction chamber; when the metal furnace door is matched with one end part of the reaction chamber 1 to close the reaction chamber, the metal furnace door is directly contacted with the sealing grinding surface of the sealing flange to form a metal-metal contact sealing structure, so that the tightness of the furnace door and the reaction chamber is improved; the metal has high temperature resistance and high temperature resistance, and a sealing ring can be omitted; compared with an O-shaped ring, the sealing flange made of the metal material has the advantages that the sealing performance of the furnace door and the vacuum reaction chamber is guaranteed, meanwhile, the service life of the sealing flange made of the metal material is longer, and the sealing flange made of the metal material does not need to be frequently replaced.
The circumferential outer side of the sealing flange 5 away from the reaction chamber is provided with a groove 51 along the circumferential direction, see fig. 5 and 7, the provision of the groove is equivalent to reducing the thickness of the sealing flange to reduce the displacement, compensating the displacement, and increasing the elasticity relative to the flange without the groove to improve the sealing property.
At least one air pipe connector 9 is arranged on the outer side of the circumference of the sealing flange 5, the air pipe connector 9 is used for connecting the right air inlet pipe 4, and the air pipe connector 9 can be welded on the outer side face of the sealing flange 5 or detachably arranged on the side face of the sealing flange 5. A plurality of threaded positioning holes 52 are provided on the circumferential outer side of the sealing flange 5 for connecting the intake pipe.
A support member 10 for supporting the gas inlet pipe is arranged in the reaction chamber 1, and referring to fig. 2, one end of the support member 10 is in contact with the inner side wall of the inner cavity 12, and the other end is in contact with the left gas inlet pipe 3 or the right gas inlet pipe 4. Because of keeping the interval between the inner wall of intake pipe and inlayer cavity 12, and the intake pipe is too long, needs support piece 10 to support the intake pipe for the intake pipe is parallel with inlayer cavity 12, support piece 10 detachable set up in inlayer cavity 12, only need put in inside can, do not have any fixed, lean on the gravity balance of both sides intake pipe completely, conveniently take out simultaneously. The support member 10 has a structure in various forms including at least a clamping end for clamping the intake duct and a fixing end disposed in the inner chamber 12, the clamping end having an opening to facilitate the intake duct to pass through.
The left air inlet pipe 3 and the right air inlet pipe 4 are connected through a connecting piece. The concrete structure of connecting piece is as follows: the connecting piece is a first connecting plate and a second connecting plate which are arranged oppositely, and a third connecting plate is arranged between the first connecting plate and the second connecting plate, the first connecting plate and the second connecting plate are used for respectively abutting against a left air inlet 3 and a right air inlet 4 which are adjacent to each other, preferably, the third connecting plate is curved, the side edge of the third connecting plate in the width direction is arc-shaped, the reaction chamber is of a hollow cylindrical structure, the inner side wall of the reaction chamber is of an arc-shaped structure, the radian of the third connecting plate is preferably the same as that of the inner side wall of the reaction chamber, and the third connecting plate is of an arc-shaped structure, so that the connecting piece faces towards the inner side wall of the reaction chamber and cannot block an air outlet on the air inlet pipe; and the air inlet pipe is too long and is provided with a connecting piece to play a role in supporting, limiting and connecting.
Furthermore, the end part of the reaction chamber 1 provided with the metal plate 6 is provided with a positioning part 7 matched with an external auxiliary assembling tool, the reaction chamber needs to be placed in a heating component and matched with the positioning part 7 through the external auxiliary assembling tool, the operation is convenient, the positioning plate is of a plate structure, one end of the positioning plate is fixedly arranged at the left end part, and the other end of the positioning plate is provided with a mounting hole matched with the external auxiliary assembling tool. And a thermocouple 8 is arranged on the metal plate 6 at the left end part of the reaction chamber 1, and the thermocouple 8 is used for detecting the real-time temperature in the reaction chamber.
According to the LPCVD double-material vacuum reaction chamber designed by the invention, the gas inlet pipes are arranged on two sides for gas diffusion, so that the gas in the reaction chamber is dispersed widely and uniformly, the gas outlet is stable, the uniformity and the process quality of a silicon wafer film are improved, and the product yield is improved; the LPCVD double-material vacuum reaction chamber designed by the invention adopts a double-layer structure of the metal outer layer and the quartz inner layer, is convenient to process, has excellent vacuum property and strong shock resistance, improves the strength of the whole reaction chamber, further prolongs the service life of a quartz tube of the vacuum reaction chamber and prolongs the service life of the whole reaction chamber; and is convenient for transportation. The vacuum reaction chamber is provided with a metal-to-metal contact sealing structure, the sealing flange has longer service life and does not need to be frequently replaced while the airtightness of the furnace door and the vacuum reaction chamber is ensured.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. The LPCVD double-material vacuum reaction chamber is characterized by comprising a reaction chamber (1) with a hollow structure, an air inlet assembly arranged in the reaction chamber (1) and an air outlet pipe (2) arranged at the end part of the reaction chamber (1), wherein the air inlet assembly is connected with an external air source (13), the reaction chamber (1) comprises an outer-layer cavity (11) and an inner-layer cavity (12) arranged in the outer-layer cavity (11), the outer-layer cavity (11) is made of a metal material, and the inner-layer cavity (12) is made of a quartz material;
the air inlet assembly comprises at least one left air inlet pipe (3) and at least one right air inlet pipe (4), an air inlet of each left air inlet pipe (3) is arranged at one end part of the reaction chamber (1) in the length direction, an air inlet of each right air inlet pipe (4) is arranged at the other end part of the reaction chamber (1) in the length direction, the left air inlet pipe (3) and the right air inlet pipe (4) extend along the length direction of the reaction chamber (1), and a plurality of air outlet holes arranged at intervals are formed in the left air inlet pipe (3) and the right air inlet pipe (4); the end part of the reaction chamber (1) matched with the furnace door is sleeved with a sealing flange made of a metal material, and one end face of the sealing flange is used for abutting against the furnace door.
2. LPCVD dual-material vacuum reaction chamber according to claim 1, characterized in that the circumferential outer side of the sealing flange (5) facing away from the reaction chamber is provided with a circumferential groove (51).
3. The LPCVD reaction chamber with dual materials in vacuum according to claim 2, wherein the gas inlet assembly further comprises gas pipe joints (9) respectively disposed at two ends of the reaction chamber (1) in the length direction, one end of each gas pipe joint (9) is connected to the left gas inlet pipe (3) or the right gas inlet pipe (4), the other end is connected to an external gas source (13), and at least one gas pipe joint (9) is disposed at the outer side of the circumference of the sealing flange (5).
4. The LPCVD double-material vacuum reaction chamber according to claim 1, characterized in that a support member (10) for supporting the left inlet pipe (3) and the right inlet pipe (4) is arranged in the reaction chamber (1), one end of the support member (10) is in contact with the inner side wall of the inner cavity (12), and the other end is in contact with the left inlet pipe (3) or the right inlet pipe (4).
5. The LPCVD double-material vacuum reaction chamber according to claim 1, characterized in that the left inlet pipe (3) and the right inlet pipe (4) are connected by a connecting piece.
6. The LPCVD reaction chamber according to claim 5, wherein the connectors are a first connecting plate and a second connecting plate which are oppositely arranged and a third connecting plate which is arranged between the first connecting plate and the second connecting plate, and the first connecting plate and the second connecting plate are used for respectively abutting against the adjacent left gas inlet pipe (3) and the right gas inlet pipe (4).
7. The LPCVD duplex vacuum reaction chamber of claim 6, wherein the third connecting plate is curved and has an arc-shaped lateral edge in the width direction.
8. The LPCVD reaction chamber according to claim 1, wherein the outer cavity (11) is a cylinder structure with one end closed and the other end open in the longitudinal direction, and the inner cavity (12) is a cylinder structure with both ends open in the longitudinal direction.
9. The LPCVD double-material vacuum reaction chamber according to claim 8, characterized in that a metal plate (6) for sealing is arranged at one end of the outer cavity (11), and the metal plate (6) is welded with the reaction chamber (1) so that one end of the outer cavity (11) is of a closed structure.
10. The LPCVD bi-material vacuum reaction chamber according to claim 9, characterized in that the end of the reaction chamber (1) provided with the metal plate (6) is provided with a positioning element (7) cooperating with an external auxiliary assembly tool and a thermocouple (8) for detecting the temperature inside the reaction chamber (1).
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| CN112802777A (en) * | 2020-12-31 | 2021-05-14 | 江苏长弘半导体有限公司 | Epitaxial wafer growth device of light emitting diode |
| CN113035748A (en) * | 2021-02-27 | 2021-06-25 | 楚赟精工科技(上海)有限公司 | Vacuum chamber, pressure control method thereof, and semiconductor processing apparatus |
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