CN218146928U - Gas inlet structure for low-pressure chemical vapor deposition and vapor deposition equipment - Google Patents
Gas inlet structure for low-pressure chemical vapor deposition and vapor deposition equipment Download PDFInfo
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- CN218146928U CN218146928U CN202222282650.2U CN202222282650U CN218146928U CN 218146928 U CN218146928 U CN 218146928U CN 202222282650 U CN202222282650 U CN 202222282650U CN 218146928 U CN218146928 U CN 218146928U
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Abstract
The utility model discloses a low pressure chemical vapor deposition's inlet structure and vapor deposition equipment belongs to low pressure chemical vapor deposition technical field. The air inlet structure comprises a furnace tube and annular air inlet pipes, wherein the furnace tube comprises a furnace opening and a furnace tail, the furnace opening and the furnace tail are arranged oppositely in the axial direction of the furnace tube, at least two annular air inlet pipes are uniformly arranged in the furnace tube, each annular air inlet pipe is axially in the same direction as the furnace tube, air inlets are uniformly arranged on the annular air inlet pipes in the circumferential direction, and the air inlets face the inner wall of the furnace tube. Because two at least annular intake pipes evenly set up in the stove pipe, set up the air inlet along circumference on the annular intake pipe, consequently can evenly input reaction gas towards the stove intraductal with the help of the air inlet. Compared with the prior art, the utility model discloses reaction gas concentration in the well stove pipe is more even, can improve the homogeneity of deposit thickness on the silicon chip.
Description
Technical Field
The utility model relates to a low pressure chemical vapor deposition technical field especially relates to a low pressure chemical vapor deposition's inlet structure and vapor deposition equipment.
Background
Conventionally, low Pressure Chemical Vapor Deposition (LPCVD) is generally used to deposit a polysilicon film, and the basic principle is to introduce a reaction gas such as silane (SiH 4) into a furnace tube and decompose the reaction gas at a high temperature to deposit a polysilicon (Poly-Si) film on the surface of a silicon wafer.
The reaction gas containing SiH4 is introduced into the furnace tube from an external specific gas pipeline, and the gas inlet is positioned at the furnace opening Side of the furnace tube, so that the concentration of the reaction gas close to the furnace opening Side in the furnace tube is higher than that of the reaction gas far away from the furnace opening Side and close to the furnace tail Side, and the deposition thickness on the silicon wafer is distributed from thick to thin along the entering direction of the reaction gas, so that the uniformity of the deposition thickness of the Poly-Side film is difficult to ensure.
SUMMERY OF THE UTILITY MODEL
The embodiment of the utility model provides a low pressure chemical vapor deposition's inlet structure and vapor deposition equipment to solve the inhomogeneous problem of deposition thickness on the silicon chip in the current boiler tube.
In order to solve the technical problem, the utility model discloses a realize like this:
in a first aspect, the utility model provides a low pressure chemical vapor deposition's inlet structure, inlet structure includes boiler tube and annular intake pipe, the boiler tube includes fire door and stove tail, wherein, the fire door with the stove tail is followed the axial of boiler tube sets up relatively, at least two annular intake pipe evenly set up in the boiler tube, each the axial of annular intake pipe with the axial syntropy of boiler tube, evenly set up the air inlet along circumference in the annular intake pipe, the air inlet orientation the boiler tube inner wall.
The gas inlet structure for the low-pressure chemical vapor deposition comprises a straight-through pipe, wherein at least part of the straight-through pipe is arranged in the furnace pipe, the part, inside the furnace pipe, of the straight-through pipe is communicated with the annular gas inlet pipe, and the part, outside the furnace pipe, of the straight-through pipe is communicated with a gas inlet source.
Foretell low pressure chemical vapor deposition's air inlet structure, through the pipe along the fire door extremely the direction of stove tail extends the setting, through the pipe including first straight pipe and second through the pipe, first straight pipe is followed the fire door side is admitted air and is communicate annular intake pipe, the straight pipe of second is followed the stove tail side is admitted air and is connected annular intake pipe.
In the gas inlet structure for low-pressure chemical vapor deposition, the first straight-through pipe is communicated with all the annular gas inlet pipes, and the second straight-through pipe is communicated with all the annular gas inlet pipes; or
The first straight-through pipe is communicated with the annular gas inlet pipe close to the furnace opening, and the second straight-through pipe is communicated with the annular gas inlet pipe close to the furnace tail.
The furnace tube further comprises a connecting piece, and the straight-through tube is connected with the annular air inlet tube through the connecting piece.
In the gas inlet structure for low-pressure chemical vapor deposition, the gas inlets on the annular gas inlet pipe are symmetrically distributed along the axial direction, and the gas inlets form an included angle of 120 degrees.
In the above gas inlet structure for low pressure chemical vapor deposition, the annular gas inlet pipe and/or the straight-through pipe are made of a silicon carbide high temperature ceramic material.
In a second aspect, the present invention provides a vapor deposition apparatus, comprising any one of the above-mentioned gas inlet structures for low pressure chemical vapor deposition.
In the vapor deposition apparatus, the vapor deposition apparatus has a silicon wafer installation area therein, and the annular gas inlet pipe is arranged around the silicon wafer installation area.
The utility model provides a low pressure chemical vapor deposition's inlet structure, the technological effect that can gain as follows:
because at least two annular intake pipes evenly set up in the stove pipe, evenly set up the air inlet along circumference on the annular intake pipe, consequently can evenly input reaction gas towards the stove intraductal with the help of the air inlet. Compared with the prior art, the utility model discloses reaction gas concentration in the well stove pipe is more even, can improve the homogeneity of deposit thickness on the silicon chip.
Drawings
The accompanying drawings, which are described herein, serve to provide a further understanding of the invention and constitute a part of this specification, and the exemplary embodiments and descriptions thereof are provided for explaining the invention without unduly limiting it. In the drawings:
fig. 1 is a schematic view of an air inlet structure provided in an embodiment of the present invention;
FIG. 2 is a schematic view of an axial schematic gas inlet structure in an embodiment of the present invention including a furnace tube;
fig. 3 is a further schematic view of an air inlet structure according to an embodiment of the present invention;
fig. 4 is a further schematic view of an air intake structure according to an embodiment of the present invention.
Reference numerals:
10-an air intake structure;
11-furnace tube; 12-furnace mouth; 13-furnace tail; 14-an annular inlet duct; 141-an air inlet; 15-a first straight pipe; 16-a second straight-through tube; 17-connecting piece.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by a person skilled in the art without making creative efforts belong to the protection scope of the present invention.
The traditional fossil energy belongs to non-renewable resources and is difficult to meet the development requirements of human beings for a long time, the deterioration of the natural environment is aggravated, novel clean renewable resources occupy a key position in the future energy structure, and the photovoltaic application is an important component of the new energy application. The front surface of a tunneling oxide layer passivation contact battery developed based on an N-type crystalline silicon battery adopts a laminated film passivation process, and the back surface of the battery adopts a laminated structure of ultra-thin silicon oxide and doped Poly-Si to form a tunneling oxide layer passivation contact structure, so that good interface passivation is provided for the back surface of a silicon wafer.
Currently, low Pressure Chemical Vapor Deposition (LPCVD) is commonly used to deposit a polysilicon film, which is based on the principle that a reaction gas such as silane (SiH 4) is introduced into a furnace tube and decomposed at a high temperature to deposit a polysilicon (Poly-Si) film on the surface of a silicon wafer.
The reaction gas containing SiH4 is introduced into the furnace tube from an external specific gas pipeline, and the gas inlet is positioned at the furnace opening Side of the furnace tube, so that the concentration of the reaction gas close to the furnace opening Side in the furnace tube is higher than that of the reaction gas far away from the furnace opening Side and close to the furnace tail Side, and the deposition thickness on the silicon wafer is distributed from thick to thin along the entering direction of the reaction gas, so that the uniformity of the deposition thickness of the Poly-Side film is difficult to ensure.
Therefore, the embodiment of the present invention provides a gas inlet structure 10 for low pressure chemical vapor deposition and a vapor deposition apparatus.
As shown in fig. 1 and 2, the gas inlet structure 10 for low-pressure chemical vapor deposition includes a furnace tube 11 and annular gas inlet pipes 14, where the furnace tube 11 includes a furnace opening 12 and a furnace tail 13, the furnace opening 12 and the furnace tail 13 are disposed opposite to each other along an axial direction of the furnace tube 11, at least two annular gas inlet pipes 14 are uniformly disposed in the furnace tube 11, an axial direction of each annular gas inlet pipe 14 is the same as the axial direction of the furnace tube 11, gas inlets 141 are uniformly disposed on the annular gas inlet pipes 14 along a circumferential direction, and the gas inlets 141 face an inner wall of the furnace tube 11 to admit gas into the furnace tube 11.
In the embodiment of the present invention, because at least two annular intake pipes 14 are uniformly arranged in the furnace tube 11, the annular intake pipe 14 is uniformly provided with the air inlet 141 along the circumferential direction, so that the reaction gas can be uniformly input into the furnace tube 11 via the air inlet 141. Compared with the prior art, the utility model discloses reaction gas concentration in the well boiler tube 11 is more even, can improve the homogeneity of deposit thickness on the silicon chip to promote product yield and solar cell's efficiency.
In fig. 1, the annular inlet pipe 14 and the straight pipe are shown for convenience, and the furnace pipe 11 is not shown. In the axial view of FIG. 2, the furnace tube 11 is at the periphery of FIG. 2, and the annular gas inlet tube 14 is at the inside, and it can also be seen from FIG. 2 that the annular gas inlet tube 14 conveys the reaction gas toward the inside of the furnace tube 11.
In an embodiment, the gas inlet structure 10 may further include a straight-through pipe, at least a portion of the straight-through pipe is disposed in the furnace tube 11, a portion inside the furnace tube 11 is communicated with the annular gas inlet pipe 14, and a portion outside the furnace tube 11 of the straight-through pipe is communicated with the gas inlet source, so that the straight-through pipe conveys the reaction gas provided by the external gas inlet source into the annular gas inlet pipe 14, and the purpose of uniformly supplying gas inside the furnace tube 11 is achieved. Of course, the air inlet structure 10 may not be provided with the straight-through pipe, and the annular air inlet pipes 14 may be directly connected by an external air inlet source.
In one embodiment, the straight-through pipe may extend from the furnace opening 12 to the furnace tail 13 (i.e., along the axial direction of the furnace tube 11), or may not extend along the axial direction of the furnace tube 11, as long as it can communicate with each annular gas inlet pipe 14. The embodiment of the utility model provides an in, direct pipe can include first direct pipe 15 and the direct pipe 16 of second, and this first direct pipe 15 is admitted air and is communicate annular intake pipe 14 by 12 sides of fire door, and the direct pipe 16 of second is admitted air and is communicated annular intake pipe 14 by 13 sides of stove tail.
The first straight-through pipe 15 can be communicated with all the annular gas inlet pipes 14, and the second straight-through pipe 16 can be communicated with all the annular gas inlet pipes 14, so that the consistency of the air inflow from the furnace mouth 12 to the furnace tail 13 is ensured. As a variant, the first straight duct 15 can communicate only with the annular inlet duct 14 close to the mouth 12, and the second straight duct 16 with the remaining annular inlet duct 14 close to the tail 13.
In some embodiments, the through pipes may include a third through pipe, a fourth through pipe, and the like, in addition to the first through pipe 15 and the second through pipe 16 described above.
In order to reliably connect the straight pipe and the annular air inlet pipe 14, as shown in fig. 3, the embodiment of the present invention may further include a connecting member 17, and the connecting member 17 is used to connect the straight pipe and the annular air inlet pipe, so that the straight pipe and the annular air inlet pipe 14 can be reliably communicated.
The embodiment of the utility model provides an in, annular intake pipe 14 can be made by carborundum high temperature ceramic material, because this material thermal expansion coefficient is little, high temperature resistant intensity is high for annular intake pipe 14 still has good stability in high temperature environment, thereby reduces its change frequency, effectively prolongs its life. The straight-through pipe can be made of a silicon carbide high-temperature ceramic material, and the straight-through pipe still has good stability in a high-temperature environment due to the small thermal expansion coefficient and high-temperature resistance strength of the material, so that the replacement frequency of the straight-through pipe is reduced, and the service life of the straight-through pipe is effectively prolonged.
In one embodiment, the air inlets 141 on the annular air inlet pipe 14 are uniformly arranged in the circumferential direction.
In another embodiment, as illustrated in fig. 4, the gas inlets 141 of the annular gas inlet pipe 14 may be symmetrically distributed along the center of gravity axis, and the gas inlets form an included angle of 120 °, so that when the furnace tube 11 is horizontally placed as illustrated in fig. 1, the gas inlets 141 face the right above the furnace tube 11 to affect the normal gas outlet.
The embodiment of the utility model provides a still provide a vapor deposition equipment, it includes foretell low pressure chemical vapor deposition's inlet structure 10, can realize above-mentioned low pressure chemical vapor deposition's inlet structure 10's technological effect moreover.
The vapor deposition equipment can also comprise a silicon wafer setting area, the silicon wafers are arranged in the furnace tube 11, the annular air inlet tube 14 is arranged around the silicon wafer setting area, and the annular air inlet tube 14 is uniformly distributed along the axial direction and is provided with air outlet holes facing the inner wall of the furnace tube 11, so that the uniformity of gas diffusion at each position in the furnace tube 11 is ensured, the uniformity of Poly-Si films on the surface of the silicon wafers is improved, and the product yield and the efficiency of the solar cell are improved.
The above description is only an example of the present invention, and is not intended to limit the present invention. Various modifications and variations of the present invention will be apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (9)
1. The utility model provides a low pressure chemical vapor deposition's inlet structure, its characterized in that, inlet structure includes boiler tube and annular intake pipe, the boiler tube includes fire door and stove tail, wherein, the fire door with the stove tail is followed the axial of boiler tube sets up relatively, two at least annular intake pipe evenly set up in the boiler tube, each the axial of annular intake pipe with the axial syntropy of boiler tube, set up the air inlet along circumference in the annular intake pipe, the air inlet towards the boiler tube inner wall sets up.
2. The LPCVD gas inlet structure according to claim 1, further comprising a straight pipe disposed at least partially inside the furnace tube and having a portion inside the furnace tube in communication with the annular gas inlet tube, and a portion outside the furnace tube in communication with a gas inlet source.
3. The LPCVD gas inlet structure according to claim 2, wherein the straight pipes extend in a direction from the furnace mouth to the furnace tail, and the straight pipes include a first straight pipe and a second straight pipe, the first straight pipe is gas-filled from the side of the furnace mouth and communicated with the annular gas inlet pipe, and the second straight pipe is gas-filled from the side of the furnace tail and connected with the annular gas inlet pipe.
4. The gas inlet structure for low pressure chemical vapor deposition according to claim 3, wherein the first straight pipe is communicated with all the annular gas inlet pipes, and the second straight pipe is communicated with all the annular gas inlet pipes; or
The first straight-through pipe is communicated with the annular gas inlet pipe close to the furnace opening, and the second straight-through pipe is communicated with the annular gas inlet pipe close to the furnace tail.
5. The gas inlet structure for low pressure chemical vapor deposition according to claim 2, wherein the furnace tube further comprises a connecting member connecting the straight-through tube with the annular gas inlet tube.
6. The LPCVD inlet structure according to claim 1, wherein the inlets on the annular inlet tube are arranged symmetrically along a center of gravity axis, and the inlets are arranged at an included angle of 120 °.
7. The LPCVD inlet structure according to claim 2, characterized in that the annular inlet tube and/or the straight-through tube are made of silicon carbide high temperature ceramic material.
8. A vapor deposition apparatus comprising the low pressure chemical vapor deposition gas inlet structure according to any one of claims 1 to 7.
9. The vapor deposition apparatus according to claim 8, wherein the vapor deposition apparatus has a wafer-disposing region therein, and the annular gas inlet pipe is disposed around the wafer-disposing region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222282650.2U CN218146928U (en) | 2022-08-29 | 2022-08-29 | Gas inlet structure for low-pressure chemical vapor deposition and vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222282650.2U CN218146928U (en) | 2022-08-29 | 2022-08-29 | Gas inlet structure for low-pressure chemical vapor deposition and vapor deposition equipment |
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| Publication Number | Publication Date |
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| CN218146928U true CN218146928U (en) | 2022-12-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202222282650.2U Active CN218146928U (en) | 2022-08-29 | 2022-08-29 | Gas inlet structure for low-pressure chemical vapor deposition and vapor deposition equipment |
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| CN (1) | CN218146928U (en) |
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2022
- 2022-08-29 CN CN202222282650.2U patent/CN218146928U/en active Active
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