CN111058014A - Film coating device - Google Patents
Film coating device Download PDFInfo
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- CN111058014A CN111058014A CN202010075626.4A CN202010075626A CN111058014A CN 111058014 A CN111058014 A CN 111058014A CN 202010075626 A CN202010075626 A CN 202010075626A CN 111058014 A CN111058014 A CN 111058014A
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- 239000007888 film coating Substances 0.000 title abstract description 7
- 238000009501 film coating Methods 0.000 title abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 37
- 239000011248 coating agent Substances 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000007747 plating Methods 0.000 claims description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 abstract description 23
- 238000000034 method Methods 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 43
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to a film coating device, which is used for coating an anti-reflection film on a substrate of a solar cell in the manufacturing process of the solar cell, and comprises a furnace body, a front flange wall, a rear flange wall and a gas supply device, wherein the film coating device is provided with at least two groups of gas inlet holes communicated with the outside and a containing cavity, the gas supply device can simultaneously supply gas to the containing cavity through the gas inlet holes, the first group of gas inlet holes is arranged on the rear flange wall, and other gas inlet holes are arranged on the furnace body or the front flange wall. According to the invention, the coating device is provided with the air inlets at different positions of the furnace body, and in the process of manufacturing the anti-reflection film, the air supply device can simultaneously supply air into the furnace body through the air inlets, so that the air in each position in the furnace body can uniformly react, and the anti-reflection film with uniform thickness can be formed on the silicon wafers at different positions in the furnace body.
Description
Technical Field
The invention relates to the field of solar cells, in particular to a film coating device.
Background
With the increasing consumption of conventional fossil energy such as global coal, oil, natural gas and the like, the ecological environment is continuously deteriorated, and particularly, the sustainable development of the human society is seriously threatened due to the increasingly severe global climate change caused by the emission of greenhouse gases. Various countries in the world make respective energy development strategies to deal with the limitation of conventional fossil energy resources and the environmental problems caused by development and utilization. Solar energy has become one of the most important renewable energy sources by virtue of the characteristics of reliability, safety, universality, long service life, environmental protection and resource sufficiency, and is expected to become a main pillar of global power supply in the future.
In a new energy revolution process, the photovoltaic industry in China has grown into a strategic emerging industry with international competitive advantages. However, the development of the photovoltaic industry still faces many problems and challenges, and the conversion efficiency and reliability are the biggest technical obstacles restricting the development of the photovoltaic industry, while the cost control and the scale-up are economically restricted.
In the production process of the solar cell, film coating is a very critical step. The film plating is to uniformly plate a layer of high-efficiency silicon nitride antireflection film on the surface of the silicon wafer, so that the reflection loss of light is reduced, the light absorption capability of the cell is enhanced, and the cell efficiency is improved. Meanwhile, amorphous silicon nitride contains a certain amount of hydrogen, and during sintering, the hydrogen in the silicon nitride diffuses into the silicon wafer to saturate dangling bonds to generate passivation effect.
In the coating process, the silicon wafers are carried into the furnace tube by a graphite boat. After the graphite boat is stably placed in the tube, when the environment in the tube meets the requirements of the coating process, specific gas with a certain proportion is released in the furnace tube through the gas tube, and the gas reacts to form silicon nitride and is attached to the surface of the silicon wafer.
In the manufacturing process, the time for the gas to reach each position is different due to the influence of the flow rate, and the gas reacts and is consumed while flowing, so when the gas near the rear furnace door starts to react to generate silicon nitride to be attached on the silicon wafer, the silicon wafer near the front furnace door may not reach the gas or the concentration of the gas is lower, and the thickness of the coating film of the cell slice cannot reach the preset effect.
If the time for releasing gas from the gas holes is prolonged, although the position close to the front furnace door can obtain ideal gas concentration and can form ideal coating thickness on the surface of the silicon wafer, the silicon wafer close to the rear furnace door stays in the reaction environment for too long time, and the gas continuously reacts, so that too much silicon nitride is attached to the surface of the silicon wafer, and the anti-reflection film is too thick.
It is therefore desirable to provide a coating device that at least partially addresses the above problems.
Disclosure of Invention
The invention aims to provide a coating device, which is provided with air inlets at different positions of a furnace body, wherein in the process of manufacturing the anti-reflection film, an air supply device can simultaneously supply air into the furnace body through the air inlets so as to ensure that the air in the furnace body uniformly reacts, thereby forming the anti-reflection film with uniform thickness on silicon wafers at different positions in the furnace body.
According to an aspect of the present invention, there is provided a plating apparatus for plating an antireflection film on a base sheet of a solar cell sheet in a manufacturing process of the solar cell sheet, the plating apparatus including:
the furnace body is internally provided with an accommodating cavity for accommodating the substrate sheet;
the furnace body comprises a front flange wall and a rear flange wall, wherein the front flange wall and the rear flange wall are respectively arranged at the front end and the rear end of the furnace body; and
an air supply device is arranged on the air supply device,
the coating device is provided with at least two groups of air inlets which are communicated with the outside and the containing cavity, the air supply device can simultaneously supply air to the containing cavity through the air inlets, wherein the air inlets are arranged on the wall of the rear flange, and the air inlets are arranged on the furnace body or the wall of the front flange.
In one embodiment, the furnace body is a cylindrical structure having an axis perpendicular to and passing through the centers of the front and rear flange walls, and the first set of inlet holes extend in and along the wall surface of the rear flange wall.
In one embodiment, the second set of air inlet holes of the at least two sets of air inlet holes is arranged on the furnace body, and the distance between the second set of air inlet holes and the first set of air inlet holes is 1/4-3/4 of the length of the furnace body.
In one embodiment, each group of the air inlet holes is at least two, and the extension directions of the air inlet holes of each group are parallel to each other.
In one embodiment, each group of the air inlet holes comprises a first air inlet hole, a second air inlet hole and a third air inlet hole, and the sequential connection line of the first air inlet holes of each group is parallel to the axis, the sequential connection line of the second air inlet holes of each group is parallel to the axis, and the sequential connection line of the third air inlet holes of each group is parallel to the axis.
In one embodiment, the coating device is characterized in that each group of the air inlets is at least three, and the extending direction of each air inlet of each group is perpendicular to the axis.
In one embodiment, the included angle between the extending directions of each pair of adjacent two air inlet holes of each group is equal.
In one embodiment, all the air intake holes of each group are located at the same height in the axis direction, and the groups are arranged at equal intervals in the axis direction in order.
In one embodiment, the air inlet holes of each group are evenly arranged around the axis in a circumferential direction relative to the axis.
In one embodiment, there is at most one air inlet on the coating device in any direction parallel to the axis.
In one embodiment, the radial dimensions of the inlet holes in each group are equal, but the radial dimensions of the inlet holes in each group are different from the radial dimensions of the inlet holes in the other groups; or
All the air inlets of the coating device have the same radial size.
In one embodiment, a second group of the at least two groups of air inlets is arranged on the furnace body, and the radial dimension of the air inlets of the second group is larger than that of the air inlets of the first group.
In one embodiment, the gas inlet device further comprises a pump pipe, and the furnace body is further provided with a gas extraction hole, and the pump pipe is configured to be capable of extracting gas in the accommodating cavity through the gas extraction hole.
In one embodiment, each set of the inlet apertures is provided with a flow rate adjustment device independent of the other sets, the flow rate adjustment device being configured to adjust the flow rate of the discharged gas.
In one embodiment, the intake vent is provided with a vent door configured to be electrically controllable to open and close the intake vent.
In one embodiment, the coating device is used for coating a silicon nitride anti-reflection film on a silicon wafer of the solar cell in the manufacturing process of the solar cell, and the gas supply device is used for supplying silane and ammonia gas to the accommodating cavity through the gas inlet hole.
In one embodiment, the coating device is used for coating a silicon nitride anti-reflection film on a silicon wafer of the solar cell in the manufacturing process of the solar cell, and the gas supply device is used for supplying silane and ammonia gas to the accommodating cavity through the gas inlet hole.
The film coating device provided by the invention is provided with the air inlets at different positions of the furnace body, and in the process of manufacturing the anti-reflection film, the air supply device can simultaneously supply air to the furnace body through the air inlets so as to enable the air at each position in the furnace body to uniformly react, thereby forming the anti-reflection film with uniform thickness on the silicon wafers at different positions in the furnace body.
Drawings
For a better understanding of the above and other objects, features, advantages and functions of the present invention, reference should be made to the preferred embodiments illustrated in the accompanying drawings. Like reference numerals in the drawings refer to like parts. It will be appreciated by persons skilled in the art that the drawings are intended to illustrate preferred embodiments of the invention without any limiting effect on the scope of the invention, and that the various components in the drawings are not drawn to scale.
FIG. 1 is a schematic view of a coating apparatus according to a preferred embodiment of the present invention;
FIG. 2 is a schematic view of an alternative embodiment of the coating device shown in FIG. 1.
Detailed Description
Reference will now be made in detail to the embodiments of the present invention, examples of which are illustrated in the accompanying drawings. What has been described herein is merely a preferred embodiment in accordance with the present invention and other ways of practicing the invention will occur to those skilled in the art and are within the scope of the invention.
The invention provides a coating device for manufacturing solar cells, which is particularly used for coating an anti-reflection film on a substrate for manufacturing the solar cells. The substrate of the solar cell sheet is, for example, a silicon wafer, and the antireflective film formed thereon may be, for example, a silicon nitride antireflective film.
Fig. 1 shows a preferred embodiment of the coating device. Referring to the drawings, it can be seen that the coating device 1 comprises a furnace body 2, a front flange wall 4 and a rear flange wall 3, and a gas supply device (not shown).
Wherein, be provided with in the furnace body 2 and be used for holding the chamber that holds of base member piece. Preferably, the furnace body 2 may be a cylindrical structure as shown in fig. 1, the cylindrical structure having an axis X. The front flange wall 4 and the rear flange wall 3 are respectively arranged at the front end and the rear end of the furnace body 2, and the outer contours of the front flange wall 4 and the rear flange wall 3 are both formed into a substantially square structure. The axis X of the furnace body 2 can pass through the centers of the front flange wall 4 and the rear flange wall 3, in other words, the line connecting the centers of the front flange wall 4 and the rear flange wall 3 coincides with the axis X. The front flange wall 4 and the rear flange wall 3 are both provided with a sealing ring and a furnace door for sealing the containing cavity of the furnace body 2.
The coating device 1 is provided with at least two groups of air inlets communicated with the outside and the accommodating cavity, and the air supply device can supply air to the accommodating cavity through the air inlets. For the purpose of forming a silicon nitride antireflective film on a silicon wafer, it is preferable that the gas supply means be capable of supplying silane and ammonia gas into the accommodating chamber.
Among the air inlet holes, the first air inlet hole 5 is arranged on the rear flange wall 3, and the other air inlet holes are arranged on the furnace body 2 or the front flange wall 4. In the present embodiment, the coating device 1 is provided with two sets of air inlet holes, a first set of air inlet holes 5 is provided on the rear flange wall 3 and extends along the rear flange wall 3, and a second set of air inlet holes 6 is provided on the furnace body 2.
More specifically, as shown in fig. 1, the first group of intake holes 5 are formed in an intake duct 7, and the intake duct 7 is a member that is separate from the rear flange wall 3 and is mounted on the rear flange wall 3. And the second set of inlet ports is formed directly in the wall of the furnace body 2. Preferably, the intake vents may be provided with vents that can be electrically controlled to open and close the intake vents, the vents 621 on the second set of second intake vents 62 being shown in a semi-open state.
The air inlets are arranged at different positions of the coating device 1, so that the concentration and the flow rate of gas at each position in the accommodating cavity can be ensured to be uniform in the process, the gas can be uniformly mixed in the accommodating cavity and the anti-reflection film with the same thickness can be generated on the silicon wafer, and the problem that the anti-reflection film on part of the silicon wafer is too thick or too thin is avoided.
Preferably, the distance between the second group of air intake holes 6 and the first group of air intake holes 5 is 1/4-3/4 of the length of the furnace body 2, in the present embodiment, the second group of air intake holes 6 are arranged at the middle position of the furnace body 2 along the length direction thereof, and the distance between the second group of air intake holes 6 and the first group of air intake holes 5 is 1/2 of the length of the furnace body 2. The "furnace length" referred to herein means a dimension of the furnace body 2 in a direction along the axis X thereof.
The air inlets of all groups are arranged to have larger intervals, so that the aim of uniform air at all positions in the accommodating cavity can be better fulfilled.
The sets of inlet holes may also have other arrangements. For example, the air inlet holes may be cylindrical holes, each group of air inlet holes may be at least two, and the extension directions of the respective air inlet holes of each group are parallel to each other. It should be noted that, the "extending direction of the air intake hole" mentioned herein refers to the axial direction of the air intake hole, and can also be understood as the penetrating direction of the air intake hole.
In the present embodiment, referring to fig. 1, the first group intake ports 5 are three, and are, in order, a first group first intake port 51, a first group second intake port 52, and a first group third intake port 53, the extending directions of the three intake ports being parallel to each other; the number of the second group of air inlet holes 6 is also three, and the second group of first air inlet holes 61, the second group of second air inlet holes 62 and the second group of third air inlet holes 63 are arranged in sequence, and the extension directions of the three air inlet holes are also parallel to each other. Further, the extending directions of the six intake holes in the present embodiment are all parallel with respect to each other.
Further, in the present embodiment, a connection line of the first air intake holes of the two groups is a line segment parallel to the axis X, a connection line of the second air intake holes of the two groups is a line segment parallel to the axis X, and a connection line of the third air intake holes of the two groups is also a line segment parallel to the axis X. That is, in the direction parallel to the axis X, the first group first intake holes 51 and the second group first intake holes 61 are aligned, the first group second intake holes 52 and the second group second intake holes 62 are aligned, and the first group third intake holes 53 and the second group third intake holes 63 are aligned.
If three or more groups of intake holes are provided, then similarly to the present embodiment, the groups of intake holes may be set as: the sequential connection line of the first air inlet holes of each group is parallel to the axis, the sequential connection line of the second air inlet holes of each group is parallel to the axis, and the sequential connection line of the third air inlet holes of each group is parallel to the axis.
In other embodiments, not shown, the directions of extension of the inlet holes may not be parallel to each other. For example, the inlet holes may all extend perpendicular to the axis X, so that there is an angle between the directions of extension of the respective inlet holes of each group. Preferably, in this case, the included angle between the extending directions of each pair of adjacent two air intake holes of each group is equal.
Preferably, the size of the air inlet holes of the respective groups can also have a variety of options. For example, in the present embodiment, all the intake ports of each group have the same radial dimension, and the radial dimension of the second group of intake ports 6 is slightly larger than that of the first group of intake ports 5. In other embodiments, not shown, the radial dimensions of the individual inlet orifices of a group can also differ from one another, or the radial dimensions of all the inlet orifices of all groups can be identical.
In order to achieve the possibility of separately controlling the gas entering the receiving chamber through the sets of inlet openings, flow rate adjusting means may be provided at the sets of inlet openings, which are independent with respect to each other. For example, when it is only necessary to control the flow rate of the gas discharged through the first group of gas inlet holes 5, it is possible to adjust only the flow rate adjusting means provided at the first group of gas inlet holes 5, while the various parameters of the flow rate adjusting means provided at the second group of gas inlet holes 6 can be kept unchanged; when it is only necessary to control the flow rate of the gas discharged through the second group of gas inlet holes 6, it is possible to adjust only the flow rate adjusting means provided at the second group of gas inlet holes 6, and at this time, the parameters of the flow rate adjusting means provided at the first group of gas inlet holes 5 can be kept constant.
Further, the air inlet device may be further provided with a pump pipe (not shown), and the furnace body 2 may be further provided with an air exhaust hole, and the pump pipe may be configured to exhaust the air in the accommodating chamber through the air exhaust hole. The air suction hole can be independent of the air inlet hole, and the air inlet hole can also be used as the air suction hole. The first evacuation operation of the process and the last evacuation operation of the silane and ammonia gases in the chamber can be performed by pumping them through the pumping holes by the pump tube.
Fig. 2 shows an alternative schematic view of the coating device of fig. 1. In fig. 2, each group of the air inlet holes is located at the same height in the axis direction X, and the groups are arranged at equal intervals in the axis direction X at one time. That is, the interval in the axial direction X of the first group intake holes 5 and the second group intake holes (including the second group first intake holes 61, the second group second intake holes 62, and the second group third intake holes 63) is equal to the interval in the axial direction X of the second group intake holes and the third group intake holes (including the third group first intake holes 71 and the third group second intake holes 72). Such an arrangement ensures that uniform inlet air can be received at each position in the axial direction X within the furnace body to ensure that the thickness of the antireflection film produced everywhere is as the same as possible.
Further, each set of the intake holes may be evenly arranged in the circumferential direction with respect to the axis direction X around the axis direction X. For example, the included angle between the axis of the second group of the first air intake holes 61 and the axis of the second group of the second air intake holes 62 is 120 °, the included angle between the axis of the second group of the second air intake holes 62 and the axis of the second group of the third air intake holes 63 is 120 °, and the included angle between the axis of the second group of the third air intake holes 63 and the axis of the second group of the first air intake holes 61 is 120 °. Thus, the uniform air inlet can be ensured at the same height position and at each position around the axis in the furnace body.
More preferably, there is at most one air inlet in any direction parallel to the axis X. For example, there are only the second group of the second intake holes 62 in the direction X1 parallel to the axis X, only the third group of the first intake holes 71 in the direction X2 parallel to the axis X, and only the third group of the second intake holes 72 in the direction X3 parallel to the axis X. The arrangement can further improve the uniformity of air inlet, so that each air inlet hole has arrangement significance.
The arrangement mode of the air inlets is based on the consideration of the shape of the furnace body, various physical properties of discharged gas, hydrodynamics and the like, and the balance of gas concentration and flow rate at each position in the furnace body in the step of generating the anti-reflection film can be fully ensured, so that the generated anti-reflection film has approximately consistent thickness.
When the coating device of the embodiment is used for coating the anti-reflection film on the silicon wafer, the graphite boat is firstly used for carrying the silicon wafer into the furnace body, and the containing cavity of the furnace body is vacuumized by the pump pipe through the air exhaust hole. After the environment in the tube meets the coating process, silane and ammonia gas are input into the accommodating cavity through the gas supply device through the gas inlet holes at different positions of the furnace body, so that the two gases react to form silicon nitride and are attached to the surface of the silicon wafer. After the process is finished, the gas supply device can input a large amount of nitrogen into the containing cavity through each group of gas inlet holes, and pump out residual gas and residues in the containing cavity through the pumping hole, so that the silicon wafer is prevented from being polluted by the residues, and the pressure in the containing cavity is restored to the atmospheric pressure.
According to the invention, the coating device is provided with the air inlets at different positions of the furnace body, and in the process of manufacturing the anti-reflection film, the air supply device can simultaneously supply air into the furnace body through the air inlets, so that the air in each position in the furnace body can uniformly react, and the anti-reflection film with uniform thickness can be formed on the silicon wafers at different positions in the furnace body. The invention improves the defects in the prior art of plating the anti-reflection film and avoids the problem of uneven thickness of the anti-reflection film generated on the silicon chip in the furnace in the manufacturing process.
The foregoing description of various embodiments of the invention is provided for the purpose of illustration to one of ordinary skill in the relevant art. It is not intended that the invention be limited to a single disclosed embodiment. As mentioned above, many alternatives and modifications of the present invention will be apparent to those skilled in the art of the above teachings. Thus, while some alternative embodiments are specifically described, other embodiments will be apparent to, or relatively easily developed by, those of ordinary skill in the art. The present invention is intended to embrace all such alternatives, modifications and variances of the present invention described herein, as well as other embodiments that fall within the spirit and scope of the present invention as described above.
Reference numerals:
coating device 1
Front flange wall 4
A first group of air inlet holes 5
First group of first intake holes 51
The first group of second intake holes 52
First set of third air inlet holes 53
Second group of air inlet holes 6
Second group of first intake ports 61
Second set of second intake ports 62
Second set of third air inlet holes 63
Air inlet pipe 7
Axis X of furnace body
Claims (17)
1. A plating apparatus for plating an antireflection film on a base sheet of a solar cell sheet in a manufacturing process of the solar cell sheet, the plating apparatus comprising:
the furnace body is internally provided with an accommodating cavity for accommodating the substrate sheet;
the furnace body comprises a front flange wall and a rear flange wall, wherein the front flange wall and the rear flange wall are respectively arranged at the front end and the rear end of the furnace body; and
an air supply device is arranged on the air supply device,
the air supply device can supply air to the accommodating cavity through the air inlets of each group simultaneously, wherein the first group of air inlets are arranged on the wall of the rear flange, and the other air inlets are arranged on the furnace body or the wall of the front flange.
2. The coating device according to claim 1, wherein the furnace body has a cylindrical structure, an axis of the cylindrical structure is perpendicular to and passes through centers of the front flange wall and the rear flange wall, and the first set of air intake holes extend in and along a wall surface of the rear flange wall.
3. The coating device according to claim 1, wherein a second set of the at least two sets of the air intake holes is provided on the furnace body, and a distance between the second set of the air intake holes and the first set of the air intake holes is 1/4-3/4 of a length of the furnace body.
4. The plating device according to claim 1, wherein each of the sets of the gas inlet holes is at least two, and the respective gas inlet holes of each set extend in parallel with each other.
5. The plating device according to claim 2, wherein each group of the air intake holes includes a first air intake hole, a second air intake hole, and a third air intake hole, and wherein a sequential connection of the first air intake holes of the respective groups is parallel to the axis, a sequential connection of the second air intake holes of the respective groups is parallel to the axis, and a sequential connection of the third air intake holes of the respective groups is parallel to the axis.
6. The coating device according to claim 2, wherein each of the plurality of air inlet holes is at least three, and each of the plurality of air inlet holes extends in a direction perpendicular to the axis.
7. The plating device according to claim 6, wherein the included angle between the extending directions of each pair of adjacent two of the air intake holes in each group is equal.
8. The plating device according to claim 2, wherein all the air intake holes of each group are located at the same height in the axis direction, and the groups are arranged at equal intervals in order in the axis direction.
9. The plating device according to claim 8, wherein the air intake holes of each group are evenly arranged around the axis in a circumferential direction with respect to the axis.
10. The coating device according to claim 8, wherein at most one air inlet hole is present in the coating device in any direction parallel to the axis.
11. The plating device according to claim 1,
the radial dimension of each air inlet hole in each group is equal, but the radial dimension of the air inlet hole in each group is different from the radial dimension of the air inlet holes in other groups; or
All the air inlets of the coating device have the same radial size.
12. The plating device according to claim 1, wherein a second group of the at least two groups of the air intake holes is provided on the furnace body, and a radial dimension of the air intake holes of the second group is larger than a radial dimension of the air intake holes of the first group.
13. The plating device according to claim 1, wherein the gas inlet device further comprises a pump tube, and the furnace body is further provided with a gas exhaust hole, and the pump tube is configured to be able to exhaust the gas in the accommodating chamber through the gas exhaust hole.
14. The plating device according to claim 1, wherein each of the groups of the air intake holes is provided with a flow rate adjustment device independent from the other groups, the flow rate adjustment device being configured to adjust a flow rate of the discharged gas.
15. The plating device according to claim 1, wherein the plating device includes an intake pipe that is a separate member from the rear flange wall and is configured to be mountable on the rear flange wall, the first group of intake holes being formed in the intake pipe.
16. The plating device according to claim 1, wherein the intake hole is provided with a hole door configured to be electrically controlled to open and close the intake hole.
17. The plating device according to any one of claims 1 to 16, wherein the plating device is used for plating a silicon nitride anti-reflection film on a silicon wafer of a solar cell in a manufacturing process of the solar cell, and the gas supply device is used for supplying silane and ammonia gas to the accommodating chamber through the gas inlet hole.
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|---|---|---|---|
| CN202010075626.4A CN111058014A (en) | 2020-01-22 | 2020-01-22 | Film coating device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010075626.4A CN111058014A (en) | 2020-01-22 | 2020-01-22 | Film coating device |
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| CN111058014A true CN111058014A (en) | 2020-04-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117089825A (en) * | 2023-06-01 | 2023-11-21 | 无锡松煜科技有限公司 | Plating chamber with uniform fluid distribution and plating method |
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