CN202688433U - Equipment for coating crystalline silicon solar cells - Google Patents
Equipment for coating crystalline silicon solar cells Download PDFInfo
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- CN202688433U CN202688433U CN2012202303908U CN201220230390U CN202688433U CN 202688433 U CN202688433 U CN 202688433U CN 2012202303908 U CN2012202303908 U CN 2012202303908U CN 201220230390 U CN201220230390 U CN 201220230390U CN 202688433 U CN202688433 U CN 202688433U
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- silicon chip
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- reaction chamber
- chip support
- plasma source
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model relates to equipment for coating solar cells, in particular to equipment for coating crystalline silicon solar cells. The equipment comprises a reaction chamber and a silicon slice carrier board, wherein the silicon slice carrier board is located at the middle part of the reaction chamber. Furthermore, the equipment also comprises upper gas inlets, lower gas inlets, upper plasma sources, lower plasma sources, gas exhaust holes, vacuum pumps and heating devices, wherein the gas exhaust holes are formed in two sides of the reaction chamber, the vacuum pumps are externally connected with the gas exhaust holes, and the heating devices are evenly distributed on the upper and lower internal surfaces of the reaction chamber. The equipment can be used for simultaneously preparing a front-face anti-reflecting film and a back-face passivating film, so that the equipment and process flows are simplified. The equipment is applicable to industrial production.
Description
Technical field
The utility model relates to a kind of filming equipment of solar cell, is specifically related to the crystal silicon solar energy battery filming equipment.
Background technology
In various silicon solar cells, crystal silicon cell has been obtained great achievement and progress at crystal-silicon solar cell aspect raising the efficiency always in recent years in occupation of most important status, has further improved its superiority in following photovoltaic application.The passivating back technology is one of crystal silicon solar energy battery effective means of raising the efficiency, and by passivating back, effectively raises open circuit voltage and the short-circuit current of solar cell, thereby has improved the efficiency of conversion of solar cell.
Passivating back mainly is to be coated with overleaf passive film at present, and this passive film can be selected silicon-dioxide, aluminium sesquioxide, and silicon nitride can also be selected the lamination passive film, such as silicon-dioxide and silicon nitride stack film, aluminium sesquioxide and silicon nitride stack film etc.Passivating back has increased passivating back equipment when raising the efficiency at present, has greatly increased the cost of manufacture of crystal silicon battery.
Summary of the invention
The purpose of this utility model is exactly a kind of crystal silicon solar energy battery filming equipment that proposes for the problems referred to above, he can finish the preparation of solar battery front side antireflective coating and passivating back film simultaneously, greatly reduce the equipment making cost, simplify processing step, be applicable to industrialization production.
A kind of crystal silicon solar energy battery filming equipment of the present utility model, comprise reaction chamber and silicon chip support plate, silicon chip support plate is positioned at the reaction chamber middle part, the enterprising pore that also comprises in addition the reaction chamber top, the lower air inlet port of below, the venting hole of reaction chamber both sides, the lower plasma source of the upper plasma source of silicon chip support plate top and silicon chip support plate below is with the external vacuum pump of venting hole be uniformly distributed in the up and down heating unit of internal surface of reaction chamber.
Silicon chip support plate is graphite cake, the even hollow out of graphite cake, and the hollow out shape is consistent with the silicon chip shape, the hollow out size is slightly less than silicon chip, carrying silicon chip in hollow out top can carry out the antireflective coating preparation to the silicon chip upper surface with this support plate, and the silicon chip lower surface is carried out the passive film preparation.
Silicon chip support plate is graphite cake, the even hollow out of graphite cake, the hollow out shape is consistent with the silicon chip shape, the hollow out size is slightly larger than silicon chip, at the silicon chip support plate lower rim hook is set, silicon wafer horizontal places on the hook, can carry out the antireflective coating preparation to the silicon chip lower surface with this support plate, and the silicon chip upper surface is carried out the passive film preparation.
Upper plasma source is positioned at the silicon chip support plate top, and lower plasma source is positioned at the silicon chip support plate below, and plasma source all can be controlled separately up and down, can adjust respectively its processing parameter according to process condition.
Enterprising pore is positioned at silicon chip support plate and upper plasma source top, and lower air inlet port is positioned at silicon chip support plate and lower plasma source below, and air inlet port can be controlled separately up and down, can pass into different gas and gas flow.
Venting hole is positioned at the reaction chamber side, is in same level with silicon chip support plate, and the gas that the reaction of silicon chip support plate above and below produces is all discharged from venting hole, and the external vacuum pump of venting hole is to guarantee the certain vacuum tightness of reaction chamber.
This crystal silicon solar energy battery filming equipment to the reaction process of silicon chip upper surface plated film is: when coating process carries out, heating unit is heated to the reaction chamber temperature temperature required, reactant gases enters reaction chamber by enterprising pore, upper plasma source dissociates to reactant gases, gas will react under the dissociated state, be coated on the silicon chip upper surface, vacuum pump is taken reactor off-gas away by venting hole, and guarantees the vacuum tightness of reaction chamber.
This crystal silicon solar energy battery filming equipment to the reaction process of silicon chip lower surface plated film is: when coating process carries out, heating unit is heated to cavity temperature temperature required, reactant gases enters reaction chamber by lower air inlet port, lower plasma source dissociates to reactant gases, gas will react under the dissociated state, be coated on the silicon chip lower surface, vacuum pump is taken reactor off-gas away by venting hole, and guarantees the vacuum tightness of reaction chamber.
A kind of crystal silicon solar energy battery filming equipment beneficial effect of the present utility model is: this equipment comprises reaction chamber and silicon chip support plate, silicon chip support plate is positioned at the reaction chamber middle part, the enterprising pore that also comprises in addition the reaction chamber top, the lower air inlet port of below, the venting hole of reaction chamber both sides, the lower plasma source of the upper plasma source of silicon chip support plate top and silicon chip support plate below is with the external vacuum pump of venting hole be uniformly distributed in the up and down heating unit of internal surface of reaction chamber.
Silicon chip support plate has two kinds of designs, can carry out the antireflective coating preparation to the silicon chip upper surface, and the silicon chip lower surface is carried out the passive film preparation.
Enterprising pore is positioned at silicon chip support plate and upper plasma source top, lower air inlet port is positioned at silicon chip support plate and lower plasma source below, and upper and lower air inlet port, upper and lower plasma source all can be controlled separately, adjust respectively its processing parameter according to process condition, pass into different gas and gas flow.
Venting hole is positioned at the reaction chamber side, is in same level with silicon chip support plate, and the gas that the reaction of silicon chip support plate above and below produces is all discharged from venting hole, and the external vacuum pump of venting hole is to guarantee the certain vacuum tightness of reaction chamber.
Use this crystal silicon solar energy battery filming equipment can carry out simultaneously the preparation of antireflective coating and passive film to silicon chip, reduce equipment cost, improve plant factor, reduce processing step, the fragment that causes in the reduction production process etc. are bad, are fit to suitability for industrialized production.
Description of drawings:
Figure 1 shows that the equipment vertical cross section of the utility model embodiment 1;
Figure 2 shows that the silicon chip support plate design of embodiment 1;
Figure 3 shows that the equipment vertical cross section of the utility model embodiment 2;
Figure 4 shows that the silicon chip support plate design of embodiment 2.
Among the figure, 1. enterprising pore 2. descends air inlet port, 3. venting hole, and 4. heating unit is 5. gone up plasma source, and 6. silicon chip support plate 7. descends plasma source, 8. reaction chamber, 9. silicon chip, 10. hook, 11. vacuum pumps.
Embodiment:
In order to understand better the utility model, below in conjunction with accompanying drawing and example the technical solution of the utility model is described, but the utility model is not limited to this.
Embodiment 1
Such as Figure of description Fig. 1, a kind of crystal silicon solar energy battery filming equipment of the present utility model shown in Figure 2, comprise reaction chamber 8 and silicon chip support plate 6, silicon chip support plate 6 is positioned at reaction chamber 8 middle parts, the enterprising pore 1 that also comprises in addition reaction chamber 8 tops, the lower air inlet port 2 of below, the venting hole 3 of reaction chamber 8 both sides, the lower plasma source 7 of the upper plasma source 5 of silicon chip support plate 6 tops and silicon chip support plate 6 belows is with the external vacuum pump 11 of venting hole 3 be evenly distributed on the heating unit 4 of reaction chamber internal surface about in the of 8.
Silicon chip support plate 6 is graphite cake, the even hollow out of graphite cake, and the hollow out shape is consistent with silicon chip 9 shapes, the hollow out size is slightly less than silicon chip 9, carrying silicon chip 9 in hollow out top can carry out the antireflective coating preparation to silicon chip 9 upper surfaces with this support plate, and silicon chip 9 lower surfaces are carried out the passive film preparation.
Venting hole 3 is positioned at reaction chamber 8 sides, is in same level with silicon chip support plate 6, and the gas that silicon chip support plate 6 above and belows reactions produces is all discharged from venting hole 3, and venting hole 3 external vacuum pumps 11 are with the vacuum tightness that guarantees that reaction chamber 8 is certain.
This crystal silicon solar energy battery filming equipment to the reaction process of silicon chip 9 upper surface plated films is: when coating process carries out, heating unit 4 is heated to reaction chamber 8 temperature temperature required, reactant gases enters reaction chamber by enterprising pore 1,5 pairs of reactant gasess of upper plasma source dissociate, gas will react under the dissociated state, be coated on silicon chip 9 upper surfaces, vacuum pump 11 is taken reactor off-gas away by venting hole 3, and guarantees the vacuum tightness of reaction chamber 8.
This crystal silicon solar energy battery filming equipment to the reaction process of silicon chip 9 lower surface plated films is: when coating process carries out, heating unit 4 is heated to cavity temperature temperature required, reactant gases enters reaction chamber 8 by lower air inlet port 2,7 pairs of reactant gasess of lower plasma source dissociate, gas will react under the dissociated state, be coated on silicon chip 9 lower surfaces, vacuum pump 11 is taken reactor off-gas away by venting hole 3, and guarantees the vacuum tightness of reaction chamber 8.
Use this crystal silicon solar energy battery filming equipment that silicon chip 9 is carried out the upper and lower surface plated film, enterprising pore 1 passes into gas silane and ammonia, lower air inlet port 2 passes into trimethyl aluminium TMA, Ar and N2O, heating unit 4 is heated to 390 degrees centigrade with reaction chamber 8 temperature, can finish silicon chip 9 upper surfaces and be coated with silicon nitride, lower surface is coated with the technical process of aluminium sesquioxide.
Embodiment 2
Such as Figure of description Fig. 3, a kind of crystal silicon solar energy battery filming equipment of the present utility model shown in Figure 4, comprise reaction chamber 8 and silicon chip support plate 6, silicon chip support plate 6 is positioned at reaction chamber 8 middle parts, the enterprising pore 1 that also comprises in addition reaction chamber 8 tops, the lower air inlet port 2 of below, the venting hole 3 of reaction chamber 8 both sides, the lower plasma source 7 of the upper plasma source 5 of silicon chip support plate 6 tops and silicon chip support plate 6 belows is with the external vacuum pump 11 of venting hole 3 be evenly distributed on the heating unit 4 of reaction chamber internal surface about in the of 8.
Silicon chip support plate 6 is graphite cake, the even hollow out of graphite cake, the hollow out shape is consistent with silicon chip 9 shapes, the hollow out size is slightly larger than silicon chip 9, at silicon chip support plate 6 lower rims hook 10 is set, silicon chip 9 levels place on the hook 10, can carry out the antireflective coating preparation to silicon chip 9 lower surfaces with this support plate, and silicon chip 9 upper surfaces are carried out the passive film preparation.
Venting hole 3 is positioned at reaction chamber 8 sides, is in same level with silicon chip support plate 6, and the gas that silicon chip support plate 6 above and belows reactions produces is all discharged from venting hole 3, and venting hole 3 external vacuum pumps 11 are with the vacuum tightness that guarantees that reaction chamber 8 is certain.
This crystal silicon solar energy battery filming equipment to the reaction process of silicon chip 9 upper surface plated films is: when coating process carries out, heating unit 4 is heated to reaction chamber 8 temperature temperature required, reactant gases enters reaction chamber by enterprising pore 1,5 pairs of reactant gasess of upper plasma source dissociate, gas will react under the dissociated state, be coated on silicon chip 9 upper surfaces, vacuum pump 11 is taken reactor off-gas away by venting hole 3, and guarantees the vacuum tightness of reaction chamber 8.
This crystal silicon solar energy battery filming equipment to the reaction process of silicon chip 9 lower surface plated films is: when coating process carries out, heating unit 4 is heated to cavity temperature temperature required, reactant gases enters reaction chamber 8 by lower air inlet port 2,7 pairs of reactant gasess of lower plasma source dissociate, gas will react under the dissociated state, be coated on silicon chip 9 lower surfaces, vacuum pump 11 is taken reactor off-gas away by venting hole 3, and guarantees the vacuum tightness of reaction chamber 8.
Use this filming equipment that silicon chip 9 is carried out the upper and lower surface plated film, lower air inlet port 1 passes into gas silane and ammonia, enterprising pore 2 passes into trimethyl aluminium TMA, Ar and N2O, heating unit 4 is heated to 390 degrees centigrade with reaction chamber 8 temperature, can finish silicon chip 9 lower surface coated with antireflection film-silicon nitrides, upper surface plating passive film--aluminium sesquioxide.
Claims (6)
1. crystal silicon solar energy battery filming equipment, comprise reaction chamber and silicon chip support plate, it is characterized in that, silicon chip support plate is positioned at the reaction chamber middle part, the enterprising pore that also comprises in addition the reaction chamber top, the lower air inlet port of below, the venting hole of reaction chamber both sides, the lower plasma source of the upper plasma source of silicon chip support plate top and silicon chip support plate below is with the external vacuum pump of venting hole be uniformly distributed in the up and down heating unit of internal surface of reaction chamber.
2. crystal silicon solar energy battery filming equipment according to claim 1, it is characterized in that: silicon chip support plate is graphite cake, the even hollow out of graphite cake, the hollow out shape is consistent with the silicon chip shape, and the hollow out size is slightly less than silicon chip, hollow out top carrying silicon chip.
3. crystal silicon solar energy battery filming equipment according to claim 1, it is characterized in that: silicon chip support plate is graphite cake, the even hollow out of graphite cake, the hollow out shape is consistent with the silicon chip shape, the hollow out size is slightly larger than silicon chip, at the silicon chip support plate lower rim hook is set, and silicon wafer horizontal places on the hook.
4. crystal silicon solar energy battery filming equipment according to claim 1 is characterized in that: upper plasma source is positioned at the silicon chip support plate top, and lower plasma source is positioned at the silicon chip support plate below.
5. crystal silicon solar energy battery filming equipment according to claim 1 is characterized in that: enterprising pore is positioned at silicon chip support plate and upper plasma source top, and lower air inlet port is positioned at silicon chip support plate and lower plasma source below.
6. crystal silicon solar energy battery filming equipment according to claim 1, it is characterized in that: venting hole is positioned at the reaction chamber side, is in same level with silicon chip support plate, the external vacuum pump of venting hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012202303908U CN202688433U (en) | 2012-05-22 | 2012-05-22 | Equipment for coating crystalline silicon solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012202303908U CN202688433U (en) | 2012-05-22 | 2012-05-22 | Equipment for coating crystalline silicon solar cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202688433U true CN202688433U (en) | 2013-01-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012202303908U Expired - Fee Related CN202688433U (en) | 2012-05-22 | 2012-05-22 | Equipment for coating crystalline silicon solar cells |
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| Country | Link |
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| CN (1) | CN202688433U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683250A (en) * | 2012-05-22 | 2012-09-19 | 山东力诺太阳能电力股份有限公司 | Crystalline silicon solar cell coating equipment |
| CN104947086A (en) * | 2015-06-02 | 2015-09-30 | 常州比太科技有限公司 | Film coating system and film coating method for producing solar battery piece |
-
2012
- 2012-05-22 CN CN2012202303908U patent/CN202688433U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683250A (en) * | 2012-05-22 | 2012-09-19 | 山东力诺太阳能电力股份有限公司 | Crystalline silicon solar cell coating equipment |
| CN102683250B (en) * | 2012-05-22 | 2015-02-04 | 山东力诺太阳能电力股份有限公司 | Crystalline silicon solar cell coating equipment |
| CN104947086A (en) * | 2015-06-02 | 2015-09-30 | 常州比太科技有限公司 | Film coating system and film coating method for producing solar battery piece |
| CN104947086B (en) * | 2015-06-02 | 2017-09-15 | 常州比太科技有限公司 | A kind of coating system and film plating process for being used to produce solar battery sheet |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130123 Termination date: 20180522 |