CN110295358A - A kind of PECVD board saturation process of low EL blackspot - Google Patents
A kind of PECVD board saturation process of low EL blackspot Download PDFInfo
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- CN110295358A CN110295358A CN201910617349.2A CN201910617349A CN110295358A CN 110295358 A CN110295358 A CN 110295358A CN 201910617349 A CN201910617349 A CN 201910617349A CN 110295358 A CN110295358 A CN 110295358A
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- aluminium oxide
- pecvd
- gas circuit
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims abstract description 53
- 206010027146 Melanoderma Diseases 0.000 title claims abstract description 35
- 230000008569 process Effects 0.000 title claims abstract description 32
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 238
- 238000006243 chemical reaction Methods 0.000 claims abstract description 85
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 44
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 44
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 31
- 239000010439 graphite Substances 0.000 claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 239000007789 gas Substances 0.000 claims description 72
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 55
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 50
- 235000013842 nitrous oxide Nutrition 0.000 claims description 27
- 229910052786 argon Inorganic materials 0.000 claims description 25
- 235000012431 wafers Nutrition 0.000 claims description 11
- 241000407429 Maja Species 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 229920006395 saturated elastomer Polymers 0.000 abstract description 18
- 238000010438 heat treatment Methods 0.000 abstract description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000002407 reforming Methods 0.000 abstract description 2
- 238000012423 maintenance Methods 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 239000012535 impurity Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 5
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 5
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 239000003708 ampul Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000005213 imbibition Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000338 in vitro Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- -1 one two Nitrogen Chemical compound 0.000 description 1
- KSOCVFUBQIXVDC-FMQUCBEESA-N p-azophenyltrimethylammonium Chemical compound C1=CC([N+](C)(C)C)=CC=C1\N=N\C1=CC=C([N+](C)(C)C)C=C1 KSOCVFUBQIXVDC-FMQUCBEESA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of PECVD board saturation process of low EL blackspot, it is related to silicon solar cell manufacturing field, the Mayan PECVD board includes aluminium oxide reaction warehouse, silicon nitride reaction warehouse, aluminium oxide reacts warehouse and is used in silicon chip surface alumina-plated film, silicon nitride reacts warehouse and is used to plate silicon nitride film in aluminum oxide film film surface, the following steps are included: step 1, vacuum heating treatment；Step 2, technological temperature parameter setting；Step 3, gas flow parameter setting；Step 4, RF power parameter setting；Step 5 keeps graphite carrying plate to be back to back Mayan PECVD board after the completion of the parameter setting of step 2 to step 3；Step 6, board saturation are saturated Mayan PECVD board 1 hour under the conditions of above-mentioned parameter, and having does not influence Mayan PECVD board yield, do not need to reduce under the premise of reforming equipment due to the EL blackspot stain problem that Mayan PECVD board maintains and generates.
Description
Technical field
The present invention relates to the PECVD boards of silicon solar cell manufacturing field more particularly to a kind of low EL blackspot to be saturated work
Skill.
Background technique
PERC technology, i.e. passivation emitter rear-face contact can substantially be dropped by forming passivation layer in rear surface of solar cell
Low back surface electricity recombination rate forms good internal optics back reflection mechanism, promotes open-circuit voltage, the short circuit electricity of battery
Stream, to promote the transfer efficiency of battery.PERC solar battery has become the main flow direction of high performance solar batteries.PERC electricity
The core in pond is to plate one layer of aluminum oxide film in silicon chip back side, and cover one layer of silicon nitride film to oxygen on aluminum oxide film
Change aluminium film to be protected.The effect of PECVD board is for plating aluminium oxide and silicon nitride film.Mayan in process of production
PECVD board needs time-based maintenance, needs to be saturated warehouse after maintenance.PERC solar battery needs after silk-screen printing
EL test is carried out to cell piece, it is A grades of pieces that EL, which tests normal cell piece, and the abnormal cell piece of EL test needs to degrade.EL is black
Spot stain is a seed type of EL degradation cell piece, and the number of EL blackspot stain directly affects the A grade rate of cell piece.
Summary of the invention
It is an object of the invention to overcome deficiency in the prior art, a kind of PECVD board saturation of low EL blackspot is provided
Technique, having does not influence Mayan PECVD board yield, does not need to reduce under the premise of reforming equipment due to Mayan PECVD board
The EL blackspot stain problem of maintenance and generation.
In order to achieve the goal above, the technical solution adopted by the present invention is that: a kind of PECVD board saturation work of low EL blackspot
Skill carries out in PECVD reaction warehouse room, and the PECVD board includes aluminium oxide reaction warehouse and silicon nitride reaction warehouse, spy
Sign is, comprising the following steps:
The warehouse lid of each warehouse is covered and is vacuumized after PECVD board maintains by step 1, vacuumize process；
Step 2, board saturation process condition setting, is set as 185cm/min~200cm/ for the technique belt speed of PECVD board
Min, aluminium oxide reaction warehouse room temperature be set as 400 DEG C~450 DEG C, aluminium oxide reaction warehouse chamber pressure be set as 0.11~0.14mbar,
Silicon nitride reaction warehouse room temperature be set as 300 DEG C, silicon nitride reaction warehouse chamber pressure be set as 0.11~0.14mbar；
Step 3, board is interior to react flow parameter setting, and the aluminium oxide reaction warehouse includes the first gas circuit, the second gas circuit, will
The laughing gas flow of first gas circuit is set as 700sccm~900sccm, TMA flow is set as 0mg/min, argon flow is set as 0sccm/
The laughing gas flow of second gas circuit is set as 700sccm~900sccm by min, TMA flow is set as 0mg/min, argon flow is set as
0sccm/min；
Step 4, radio-frequency power and the setting of left and right duty cycle parameters in board, by the radio frequency of aluminium oxide reaction the first gas circuit of warehouse
Power is set as 2500W~2800W, the left and right duty ratio of aluminium oxide reaction the first gas circuit of warehouse is set to 6/17,6/18, by oxygen
Change reactive aluminum warehouse the second gas circuit radio-frequency power be set as 2500W~2800W, aluminium oxide reaction warehouse the second gas circuit a left side
Right duty ratio is set to 6/17,6/18；
Step 5, board saturation, Step 2: Step 3: step 4 technological parameter under the conditions of, keep graphite carrying plate continuously into
PECVD board out stands PECVD board 1 hour.
In order to advanced optimize the present invention, following technical scheme can be preferentially selected:
Preferably, the model Mayan MAIA back plating board that the PECVD board uses.
Preferably, the graphite carrying plate loads the rectangle graphite carrying plate of 24 silicon wafers using 6 long, wide 4 altogether.
Preferably, the silicon wafer is one of p type single crystal silicon piece or polysilicon chip.
Preferably, the technique belt speed of aluminium oxide reaction warehouse is set as 185cm/min in the step 2, aoxidizes reactive aluminum
Warehouse temperature is set as 450 DEG C, and aluminium oxide reaction warehouse chamber pressure is set as 0.14mbar.
Preferably, the step 3 by the laughing gas flow of the first gas circuit be set as 800sccm, TMA flow be set as 0mg/min,
Argon flow is set as 0sccm/min, and the laughing gas flow of the second gas circuit is set as 800sccm, TMA flow and is set as 0mg/min, argon gas
Flow is set as 0sccm/min.
Preferably, the radio-frequency power of aluminium oxide reaction the first gas circuit of warehouse is set as 2800W, aluminium oxide in the step 4
The left and right duty ratio of reaction the first gas circuit of warehouse is set to 6/17,6/18, by penetrating for the second gas circuit of aluminium oxide reaction warehouse
Frequency power is set as 2800W, and the left and right duty ratio of the second gas circuit of aluminium oxide reaction warehouse is set to 6/17,6/18.
The beneficial effects of the present invention are:
(1) it is not necessarily to equipment investment, production solar panel is carried out using Mayan PECVD board, passes through complex optimum and adjustment
Three gas flow, technological temperature, radio-frequency power technological parameters in aluminium oxide cavity, while graphite carrying plate being kept not carry silicon wafer company
Continuous disengaging Mayan PECVD board, can be realized the problem that first list EL blackspot stain ratio is higher after PECVD board maintains.
(2) PECVD board only needs the adjustment intracorporal technological parameter of aluminium oxide chamber, by improving radio-frequency power, increases to laughing at
The ionization of gas improves the cleaning effect of warehouse；Since alumina powder has water imbibition when Mayan board maintains, by improving work
Temperature when skill come the moisture content of warehouse when reducing maintenance, while being back to back Mayan board by graphite carrying plate, makes warehouse
Continuous inflated with nitrogen, vacuumizes, and the impurity content inside warehouse is constantly pumped, so that first list EL is black after realizing the maintenance of reduction Mayan
The higher problem of spot stain ratio, compared with the prior art, the EL blackspot that the Mayan board warehouse that the present invention is saturated out generates are black
Point ratio reduces half or so, can actively promote the technological innovation and large-scale production of PERC battery, has preferable economic effect
Benefit and social benefit.
Specific embodiment
Pass through PECVD(PlasmaEnhancedChemicalVaporDeposition, plasma enhanced chemical vapor
Sedimentation) technology solar battery sheet surface deposit one layer of silicon nitride film, working principle be high-frequency current make containing
The gas ionization of film composed atom is being partially formed plasma, and the very strong plasma of chemical activity is easy to react,
Film required for being formed on substrate.It can be good at reducing sunlight in the reflection of silicon chip surface, reduce reflectivity.Technique
Graphite boat is saturated before, effect is one layer of silicon nitride film of deposition on graphite boat inner wall, so that inner wall is each
Place is in silicon nitride state, and the nitride deposition rate of graphite boat various places inside can be made to reach unanimity in this way, and graphite boat inner wall is flat
Smooth degree is consistent.The effect of saturation process is exactly one layer of silicon nitride film of deposition on graphite boat inner wall, so that inner wall is equal everywhere
In silicon nitride state, the nitride deposition rate of graphite boat various places inside can be made to reach unanimity in this way, graphite boat inner wall flatness
Unanimously, flatness difference can make non-uniform electric, theoretically plated film can be made uneven, and flatness difference can cause inner wall table
There is color difference piece in area change, the phenomenon that degree of saturation can be caused inadequate.
Reaction warehouse that there are two the Mayan MAIA back plating boards used in the present embodiment, a warehouse alumina-plated film,
Another warehouse plates silicon nitride film, and Mayan board needs time-based maintenance, and maintenance period is 120 hours, and when maintenance needs
Two warehouses are opened into the quartz ampoule inside replacement warehouse and clear up the aluminium oxide and silicon nitride deposited inside warehouse, wait maintain
It needs operation process to be saturated two warehouses 1 hour or so after finishing, reaches producing line with indexs such as the silicon wafer efficiency EL that guarantees output
Demand.Under normal conditions, the first single silicon-chip (1000) the EL blackspot stain ratio produced after the saturation of Mayan is relatively high, the present invention
Technique is under the premise of guaranteeing battery conversion efficiency not less than prior art, by changing technological parameter, so that Mayan is maintained
The EL blackspot stain of the first single silicon-chip reaches the level to maintain an equal level with producing line afterwards.
Indoor first gas circuit of aluminium oxide reaction warehouse, the second gas circuit provide laughing gas, TMA, argon gas, the oxidation of laughing gas i.e. one two
Nitrogen, molecular formula N20, the cleaning after laughing gas ionizes under the action of radio frequency, for silicon chip surface.TMA is trimethyl aluminium, molecule
Formula is Al (CH3)3, it is chemically reacted after TMA ionization with laughing gas, in silicon chip surface deposited oxide aluminium film, specific reaction is as follows:
2Al(CH3)3+3N20→Al2O3+3N2+2CH4+C+1/2H2
2Al(CH3)3+5Ar+20N20→Al2O3+2CO2+4CO+9H2O+20N2+5Ar
Wherein argon Ar is to carry gas, is not involved in reaction, in the presence of argon Ar, can consume more laughing gas and make TMA complete
Full response.
Below in conjunction with the present invention, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that
Described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on the implementation in the present invention
Example, every other embodiment obtained by those of ordinary skill in the art without making creative efforts belong to
The scope of protection of the invention.
Embodiment 1
A kind of PECVD board saturation process of low EL blackspot, PECVD board use Mayan MAIA model device, Mayan PECVD machine
Platform includes aluminium oxide reaction warehouse, silicon nitride reaction warehouse, and aluminium oxide reacts warehouse and is used in silicon chip surface alumina-plated film,
Silicon nitride reacts warehouse and is used to plate silicon nitride film in aluminum oxide film film surface, comprising the following steps:
Step 1, vacuum heating treatment needs the warehouse lid by each warehouse to cover and takes out after the maintenance of Mayan PECVD board
Process is opened in vacuum heating.
Step 2, the technique belt speed of the aluminium oxide reaction warehouse of Mayan PECVD is set as 185cm/min, cavity temperature is set as
300 DEG C, aluminium oxide reaction warehouse chamber pressure is set as 0.14mbar, and silicon nitride reaction warehouse room temperature is set as 300 DEG C, silicon nitride reaction warehouse
Chamber pressure is set as 0.14mbar；
Step 3, flow parameter is arranged, and totally two gas circuits, the laughing gas flow of first gas circuit are the aluminium oxide cavity of Mayan PECVD
700sccm, TMA flow are 400mg/min, argon flow 600sccm/min, and the laughing gas flow of second gas circuit is
700sccm, TMA flow are 400mg/min, argon flow 600sccm/min.
Step 4, the radio-frequency power of first gas circuit of aluminium oxide cavity is 2300W, and left and right duty ratio is respectively 6/17,6/
18.The radio-frequency power of second gas circuit of aluminium oxide cavity is 2300W, and left and right duty ratio is respectively 6/17,6/18.When technique
Pressure is 0.14mbar.
Step 5, it after opening technique, keeps graphite carrying plate to be back to back Mayan PECVD board, makes the continuous inflated with nitrogen of warehouse,
It vacuumizes, the impurity content inside warehouse is constantly pumped, to realize the first list EL blackspot stain ratio after Mayan is maintained that reduces
Higher problem, graphite carrying plate load the rectangle graphite carrying plate of 24 silicon wafers using 6 long, wide 4 altogether；
Step 6, board is saturated, and under the conditions of above-mentioned parameter, is saturated Mayan PECVD board 1 hour.
Embodiment 2
Step 1, vacuum heating treatment needs the warehouse lid by each warehouse to cover and takes out after the maintenance of Mayan PECVD board
Process is opened in vacuum heating；
Step 2, the technique belt speed of the aluminium oxide cavity of Mayan PECVD is set as 185cm/min, cavity temperature is set as 350 DEG C, oxygen
Change reactive aluminum warehouse pressure and be set as 0.14mbar, silicon nitride reaction warehouse room temperature is set as 300 DEG C, silicon nitride reaction warehouse chamber pressure sets
For 0.14mbar；
Step 3, flow parameter is arranged, and totally two gas circuits, the laughing gas flow of first gas circuit are the aluminium oxide cavity of Mayan PECVD
720sccm, TMA flow are 300mg/min, argon flow 600sccm/min, and the laughing gas flow of second gas circuit is
700sccm, TMA flow are 300mg/min, argon flow 600sccm/min；
Step 4, the radio-frequency power of first gas circuit of aluminium oxide cavity is 2500W, and left and right duty ratio is respectively 6/17,6/18.
The radio-frequency power of second gas circuit of aluminium oxide cavity is 2500W, and left and right duty ratio is respectively 6/17,6/18, pressure when technique
It is by force 0.14mbar；
Step 5, after opening technique, graphite carrying plate is kept to be back to back Mayan PECVD board, makes the continuous inflated with nitrogen of warehouse, taken out true
Sky, the impurity content inside warehouse are constantly pumped, thus realize reduce Mayan maintenance after first list EL blackspot stain ratio it is higher
The problem of, graphite carrying plate loads the rectangle graphite carrying plate of 24 silicon wafers using 6 long, wide 4 altogether；
Step 6, board is saturated, and under the conditions of above-mentioned parameter, is saturated Mayan PECVD board 1 hour.
Embodiment 3
A kind of PECVD board saturation process of low EL blackspot, PECVD board use Mayan MAIA model device, Mayan PECVD machine
Platform includes aluminium oxide reaction warehouse, silicon nitride reaction warehouse, and aluminium oxide reacts warehouse and is used in silicon chip surface alumina-plated film,
Silicon nitride reacts warehouse and is used to plate silicon nitride film in aluminum oxide film film surface, comprising the following steps:
Step 1, the warehouse lid of each warehouse is covered and is vacuumized after Mayan PECVD board maintains by vacuum heating treatment
Heating carries out processing parameter setting, and wherein silicon nitride cavity technological parameter is constant；
Step 2, the technique belt speed of aluminium oxide reaction warehouse is set as 185cm/min, aluminium oxide reaction warehouse room temperature is set as 350
DEG C, aluminium oxide reaction warehouse chamber pressure is set as 0.14mbar, and silicon nitride reaction warehouse room temperature is set as 300 DEG C, silicon nitride reaction warehouse
Pressure is set as 0.14mbar；
Step 3, flow parameter is arranged, and the aluminium oxide reaction warehouse includes the first gas circuit, the second gas circuit, by laughing at for the first gas circuit
Throughput is set as 740sccm, and TMA flow is set as 200mg/min, and argon flow is set as 300sccm/min, by laughing at for the second gas circuit
Throughput is set as 740sccm, and TMA flow is set as 200mg/min, and argon flow is set as 300sccm/min；
Step 4, the radio-frequency power of aluminium oxide reaction the first gas circuit of warehouse is set as by radio-frequency power and the setting of left and right duty cycle parameters
The left and right duty ratio of 2600W, aluminium oxide reaction the first gas circuit of warehouse are set to 6/17,6/18, by aluminium oxide reaction warehouse
The radio-frequency power of second gas circuit is set as 2600W, the left and right duty ratio of the second gas circuit of aluminium oxide reaction warehouse is set to 6/17,
6/18；
Step 5, after opening technique, graphite carrying plate is kept to be back to back Mayan PECVD board, makes the continuous inflated with nitrogen of warehouse, taken out true
Sky, the impurity content inside warehouse are constantly pumped, thus realize reduce Mayan maintenance after first list EL blackspot stain ratio it is higher
The problem of, graphite carrying plate loads the rectangle graphite carrying plate of 24 silicon wafers using 6 long, wide 4 altogether；
Step 6, board is saturated, and under the conditions of above-mentioned parameter, is saturated Mayan PECVD board 1 hour.
Embodiment 4
A kind of PECVD board saturation process of low EL blackspot, PECVD board use Mayan MAIA model device, Mayan PECVD machine
Platform includes aluminium oxide reaction warehouse, silicon nitride reaction warehouse, and aluminium oxide reacts warehouse and is used in silicon chip surface alumina-plated film,
Silicon nitride reacts warehouse and is used to plate silicon nitride film in aluminum oxide film film surface, comprising the following steps:
Step 1, the warehouse lid of each warehouse is covered and is vacuumized after Mayan PECVD board maintains by vacuum heating treatment
Heating carries out processing parameter setting, and wherein silicon nitride cavity technological parameter is constant；
Step 2, the technique belt speed of aluminium oxide reaction warehouse is set as 185cm/min, aluminium oxide reaction warehouse room temperature is set as 450
DEG C, aluminium oxide reaction warehouse chamber pressure is set as 0.14mbar, and silicon nitride reaction warehouse room temperature is set as 300 DEG C, silicon nitride reaction warehouse
Pressure is set as 0.14mbar；
Step 3, flow parameter is arranged, and the aluminium oxide reaction warehouse includes the first gas circuit, the second gas circuit, by laughing at for the first gas circuit
Throughput is set as 800sccm, and TMA flow is set as 0mg/min, and argon flow is set as 0sccm/min, by the laughing gas stream of the second gas circuit
Amount is set as 800sccm, and TMA flow is set as 0mg/min, and argon flow is set as 0sccm/min；
Step 4, the radio-frequency power of aluminium oxide reaction the first gas circuit of warehouse is set as by radio-frequency power and the setting of left and right duty cycle parameters
The left and right duty ratio of 2800W, aluminium oxide reaction the first gas circuit of warehouse are set to 6/17,6/18, by aluminium oxide reaction warehouse
The radio-frequency power of second gas circuit is set as 2800W, the left and right duty ratio of the second gas circuit of aluminium oxide reaction warehouse is set to 6/17,
6/18；
Step 5, after opening technique, graphite carrying plate is kept to be back to back Mayan PECVD board, makes the continuous inflated with nitrogen of warehouse, taken out true
Sky, the impurity content inside warehouse are constantly pumped, thus realize reduce Mayan maintenance after first list EL blackspot stain ratio it is higher
The problem of, graphite carrying plate loads the rectangle graphite carrying plate of 24 silicon wafers using 6 long, wide 4 altogether；
Step 6, board is saturated, and under the conditions of above-mentioned parameter, is saturated Mayan PECVD board 1 hour.
Embodiment 5
A kind of PECVD board saturation process of low EL blackspot, PECVD board use Mayan MAIA model device, Mayan PECVD machine
Platform includes aluminium oxide reaction warehouse, silicon nitride reaction warehouse, and aluminium oxide reacts warehouse and is used in silicon chip surface alumina-plated film,
Silicon nitride reacts warehouse and is used to plate silicon nitride film in aluminum oxide film film surface, comprising the following steps:
Step 1, the warehouse lid of each warehouse is covered and is vacuumized after Mayan PECVD board maintains by vacuum heating treatment
Heating carries out processing parameter setting, and wherein silicon nitride cavity technological parameter is constant；
Step 2, the technique belt speed of aluminium oxide reaction warehouse is set as 185cm/min, aluminium oxide reaction warehouse room temperature is set as 500
DEG C, aluminium oxide reaction warehouse chamber pressure is set as 0.14mbar, and silicon nitride reaction warehouse room temperature is set as 300 DEG C, silicon nitride reaction warehouse
Pressure is set as 0.14mbar；
Step 3, flow parameter is arranged, and the aluminium oxide reaction warehouse includes the first gas circuit, the second gas circuit, by laughing at for the first gas circuit
Throughput is set as 850sccm, and TMA flow is set as 0mg/min, and argon flow is set as 0sccm/min, by the laughing gas stream of the second gas circuit
Amount is set as 850sccm, and TMA flow is set as 0mg/min, and argon flow is set as 0sccm/min；
Step 4, the radio-frequency power of aluminium oxide reaction the first gas circuit of warehouse is set as by radio-frequency power and the setting of left and right duty cycle parameters
The left and right duty ratio of 3000W, aluminium oxide reaction the first gas circuit of warehouse are set to 6/17,6/18, by aluminium oxide reaction warehouse
The radio-frequency power of second gas circuit is set as 3000W, the left and right duty ratio of the second gas circuit of aluminium oxide reaction warehouse is set to 6/17,
6/18；
Step 5, after opening technique, graphite carrying plate is kept to be back to back Mayan PECVD board, makes the continuous inflated with nitrogen of warehouse, taken out true
Sky, the impurity content inside warehouse are constantly pumped, thus realize reduce Mayan maintenance after first list EL blackspot stain ratio it is higher
The problem of, graphite carrying plate loads the rectangle graphite carrying plate of 24 silicon wafers using 6 long, wide 4 altogether；
Step 6, board is saturated, and under the conditions of above-mentioned parameter, is saturated Mayan PECVD board 1 hour.
The influence that various parameters are saturated board:
(1) reaction chamber temperature: the alumina powder of aluminium oxide warehouse attachment can adsorb steam when due to maintenance, and steam exists
H ion and hydroxyl are decomposed into when operation process, into ALOx film layer, after hydroxyl is absorbed by ALOx, positively charged H ion with
Negatively charged ALOx formed it is interior influence the back passivation effect of ALOx to electric field, cause under EL present black will cause EL blackspot
Temperature is improved and is conducive to water evaporation when saturation process is run by stain, in this case can extract storehouse out with vacuum pump
In vitro.Theoretically the temperature of saturation process the high more is conducive to the evaporation of steam discharge, the problem of due to board hardware, if warm
The heating plate deformation that will cause board if spending height, influences the stability of board, thus the temperature of saturation process no more than
450 degree.
(2) reaction power: the ionization that the raising of power is more advantageous to laughing gas generates plasma, but if power is excessively high
If be easy to cause the damage of quartz ampoule sealing ring, care for no more than 2800W, peak 2800 selected to be used as experimental example.
(3) laughing gas flow: 1, laughing gas and TMA reaction can generate carbon when normal process, and the presence of carbon will also result in electricity
The EL blackspot stain of pond piece, when running saturation process, oxidation of coal can be generated carbon dioxide and be arranged by vacuum pump by laughing gas
Out outside chamber.2, laughing gas can generate plasma by ionization, and plasma there is bombardment to make the impurity adhered on chamber
With impurity can gradually fall off with the bombardment of plasma, while can be also discharged outside chamber by vacuum pump.
(4) TMA and argon flow are zero: can be with laughing gas reaction production aluminium oxide, shadow if saturation process is passed through TMA
Cleaning action of the laughing gas to warehouse is rung, in addition TMA exists in fluid form under normal pressure, when entering aluminium oxide warehouse
It is to be entered by argon gas carrying, so the flow of argon gas is also required to be set as 0 if TMA flow set is 0.
Experiment content: 5000 progress fragment processing of preceding working procedure are divided into five 1000, Mayan board maintenance again
After be respectively adopted embodiment 1, embodiment 2, embodiment 3, embodiment 4, embodiment 5 to Mayan board warehouse carry out saturation 1 hour,
1000 are produced after wait be saturated, and are passed same path under five 1000 after production, are counted respectively after silk-screen printing
EL blackspot stain ratio shows that present invention process reduces by 50% or so compared with the EL blackspot stain ratio of original process by 8 secondary trackings.
Experimental data table 1:
By embodiment 1, embodiment 2, embodiment 3, embodiment 4, embodiment 5 compares can be clearly understood that by mentioning
Under conditions of high-temperature, increase power, increase laughing gas flow and adjustment TMA and argon flow are zero, it can be greatly reduced
EL blackspot stain ratio, while the parameter of embodiment 4 is set as the pre-set parameter optimized.
Finally, it should be noted that the foregoing is only a preferred embodiment of the present invention, it is not intended to restrict the invention,
Although the present invention is described in detail referring to the foregoing embodiments, for those skilled in the art, still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features,
All within the spirits and principles of the present invention, any modification, equivalent replacement, improvement and so on should be included in of the invention
Within protection scope.
Claims (7)
1. a kind of PECVD board saturation process of low EL blackspot, carries out in PECVD reaction warehouse room, the PECVD board includes
Aluminium oxide reacts warehouse and silicon nitride reacts warehouse, which comprises the following steps:
Aluminium oxide after PECVD board maintains, is reacted warehouse and silicon nitride reacts warehouse by step 1, vacuumize process
Warehouse lid, which covers, to be vacuumized；
Step 2, board saturation process condition setting, is set as 185cm/min~200cm/ for the technique belt speed of PECVD board
Min, aluminium oxide reaction warehouse room temperature be set as 400 DEG C~450 DEG C, aluminium oxide reaction warehouse chamber pressure be set as 0.11~0.14mbar,
Silicon nitride reaction warehouse room temperature be set as 300 DEG C, silicon nitride reaction warehouse chamber pressure be set as 0.11~0.14mbar；
Step 3, board is interior to react flow parameter setting, and the aluminium oxide reaction warehouse includes the first gas circuit, the second gas circuit, will
The laughing gas flow of first gas circuit is set as 700sccm~900sccm, TMA flow is set as 0mg/min, argon flow is set as 0sccm/
The laughing gas flow of second gas circuit is set as 700sccm~900sccm by min, TMA flow is set as 0mg/min, argon flow is set as
0sccm/min；
Step 4, radio-frequency power and the setting of left and right duty cycle parameters in board, by the radio frequency of aluminium oxide reaction the first gas circuit of warehouse
Power is set as 2500W~2800W, the left and right duty ratio of aluminium oxide reaction the first gas circuit of warehouse is set to 6/17,6/18, by oxygen
Change reactive aluminum warehouse the second gas circuit radio-frequency power be set as 2500W~2800W, aluminium oxide reaction warehouse the second gas circuit a left side
Right duty ratio is set to 6/17,6/18；
Step 5, board saturation, Step 2: Step 3: step 4 technological parameter under the conditions of, keep graphite carrying plate continuously into
PECVD board out stands PECVD board 1 hour.
2. a kind of PECVD board saturation process of low EL blackspot according to claim 1, it is characterised in that: the PECVD
The model Mayan MAIA back plating board that board uses.
3. a kind of PECVD board saturation process of low EL blackspot according to claim 1, it is characterised in that: the graphite
Support plate loads the rectangle graphite carrying plate of 24 silicon wafers using 6 long, wide 4 altogether.
4. a kind of PECVD board saturation process of low EL blackspot according to claim 3, it is characterised in that: the silicon wafer
For one of p type single crystal silicon piece or polysilicon chip.
5. a kind of PECVD board saturation process of low EL blackspot according to claim 1, it is characterised in that: the step
The technique belt speed of aluminium oxide reaction warehouse is set as 185cm/min in two, aluminium oxide reaction warehouse room temperature is set as 450 DEG C, oxidation
Reactive aluminum warehouse pressure is set as 0.14mbar.
6. a kind of PECVD board saturation process of low EL blackspot according to claim 1, it is characterised in that: the step
Three are set as the laughing gas flow of the first gas circuit that 800sccm, TMA flow are set as 0mg/min, argon flow is set as 0sccm/min, will
The laughing gas flow of second gas circuit is set as that 800sccm, TMA flow are set as 0mg/min, argon flow is set as 0sccm/min.
7. a kind of PECVD board saturation process of low EL blackspot according to claim 1, it is characterised in that: the step
The radio-frequency power of aluminium oxide reaction the first gas circuit of warehouse is set as 2800W in four, aluminium oxide reacts the left and right of the first gas circuit of warehouse
Duty ratio is set to 6/17,6/18, and the radio-frequency power of the second gas circuit of aluminium oxide reaction warehouse is set as 2800W, aluminium oxide
The left and right duty ratio for reacting the second gas circuit of warehouse is set to 6/17,6/18.
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