CN110295358B - PECVD (plasma enhanced chemical vapor deposition) machine saturation process with low EL black spots - Google Patents
PECVD (plasma enhanced chemical vapor deposition) machine saturation process with low EL black spots Download PDFInfo
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- CN110295358B CN110295358B CN201910617349.2A CN201910617349A CN110295358B CN 110295358 B CN110295358 B CN 110295358B CN 201910617349 A CN201910617349 A CN 201910617349A CN 110295358 B CN110295358 B CN 110295358B
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 64
- 230000008569 process Effects 0.000 title claims abstract description 63
- 238000006243 chemical reaction Methods 0.000 claims abstract description 107
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 97
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 45
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 45
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 31
- 239000010439 graphite Substances 0.000 claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000012423 maintenance Methods 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 238000007747 plating Methods 0.000 claims abstract description 15
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 12
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 64
- 239000007789 gas Substances 0.000 claims description 59
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 50
- 235000013842 nitrous oxide Nutrition 0.000 claims description 31
- 229910052786 argon Inorganic materials 0.000 claims description 25
- 235000012431 wafers Nutrition 0.000 claims description 23
- 206010027146 Melanoderma Diseases 0.000 claims description 14
- 241000407429 Maja Species 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000009738 saturating Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000005086 pumping Methods 0.000 description 6
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 4
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 4
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- KSOCVFUBQIXVDC-FMQUCBEESA-N p-azophenyltrimethylammonium Chemical compound C1=CC([N+](C)(C)C)=CC=C1\N=N\C1=CC=C([N+](C)(C)C)C=C1 KSOCVFUBQIXVDC-FMQUCBEESA-N 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
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- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a PECVD (plasma enhanced chemical vapor deposition) machine saturation process with low EL black spots, which relates to the field of silicon solar cell manufacturing, and comprises an alumina reaction chamber and a silicon nitride reaction chamber, wherein the alumina reaction chamber is used for plating an alumina film on the surface of a silicon wafer, and the silicon nitride reaction chamber is used for plating a silicon nitride film on the surface of the alumina film, and the PECVD machine saturation process comprises the following steps: step one, carrying out vacuum heating treatment; setting process temperature parameters; setting gas flow parameters; step four, setting radio frequency power parameters; step five, after the parameter setting of the step two to the step three is finished, the graphite support plate is kept to continuously enter and exit the Maya PECVD machine; and step six, the machine is saturated, and under the parameter conditions, the Maya PECVD machine is saturated for 1 hour, so that the yield of the Maya PECVD machine is not influenced, and the problem of EL black spots and black spots generated by maintenance of the Maya PECVD machine is reduced on the premise of not modifying equipment.
Description
Technical Field
The invention relates to the field of silicon solar cell manufacturing, in particular to a PECVD machine saturation process with low EL black spots.
Background
The PERC technology is used for passivating the back surface of the emitter, and a passivation layer is formed on the back surface of the solar cell, so that the electrical recombination rate of the back surface can be greatly reduced, a good internal optical back reflection mechanism is formed, the open-circuit voltage and the short-circuit current of the cell are improved, and the conversion efficiency of the cell is improved. PERC solar cells have become the dominant direction for high efficiency solar cells. The core of the PERC battery is that an alumina film is plated on the back surface of a silicon wafer, and a silicon nitride film is covered on the alumina film to protect the alumina film. The PECVD machine is used for plating aluminum oxide and silicon nitride films. In the production process, the Maya PECVD machine table needs to be maintained regularly, and the bin body needs to be saturated after maintenance. After the PERC solar cell is subjected to screen printing, EL testing needs to be carried out on the cell, the cell with normal EL testing is an A-level cell, and the cell with abnormal EL testing needs to be degraded. The EL black spots are a type of EL degraded cell, and the degree of the EL black spots directly influences the A-level rate of the cell.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides a PECVD machine saturation process with low EL black spots, which has the advantages that the yield of a Maya PECVD machine is not influenced, and the problem of EL black spots generated by maintenance of the Maya PECVD machine is reduced on the premise of not modifying equipment.
In order to achieve the above purpose, the invention adopts the technical scheme that: a PECVD machine saturation process with low EL black spots is carried out in a PECVD reaction chamber, the PECVD machine comprises an alumina reaction chamber and a silicon nitride reaction chamber, and the PECVD machine saturation process is characterized by comprising the following steps:
step one, vacuumizing, namely covering a bin cover of each bin body for vacuumizing after the maintenance of a PECVD machine is finished;
setting the saturation process conditions of a machine, setting the process belt speed of a PECVD machine to be 185-200 cm/min, the temperature of an alumina reaction chamber to be 400-450 ℃, the pressure of the alumina reaction chamber to be 0.11-0.14 mbar, the temperature of a silicon nitride reaction chamber to be 300 ℃, and the pressure of the silicon nitride reaction chamber to be 0.11-0.14 mbar;
setting reaction flow parameters in the machine, wherein the alumina reaction chamber comprises a first gas path and a second gas path, setting the laughing gas flow of the first gas path as 700 sccm-900 sccm, setting the TMA flow as 0mg/min and setting the argon flow as 0sccm, setting the laughing gas flow of the second gas path as 700 sccm-900 sccm, setting the TMA flow as 0mg/min and setting the argon flow as 0 sccm;
setting radio frequency power and duty ratio parameters of the left end and the right end in the machine, setting the radio frequency power of a first gas path of the alumina reaction chamber to be 2500W-2800W, setting the duty ratios of the left end and the right end of the first gas path of the alumina reaction chamber to be 6/17 and 6/18 respectively, setting the radio frequency power of a second gas path of the alumina reaction chamber to be 2500W-2800W, and setting the duty ratios of the left end and the right end of the second gas path of the alumina reaction chamber to be 6/17 and 6/18 respectively;
and step five, the machine is saturated, the graphite carrier plate is kept to continuously enter and exit the PECVD machine under the process parameter conditions of the step two, the step three and the step four, and the PECVD machine is kept standing for 1 hour.
In order to further optimize the present invention, the following technical solutions may be preferably selected:
preferably, the PECVD machine is a Maya MAIA back plating machine.
Preferably, the graphite support plate is a rectangular graphite support plate with the length of 6 and the width of 4 and the total loading of 24 silicon wafers.
Preferably, the silicon wafer is one of a P-type monocrystalline silicon wafer or a polycrystalline silicon wafer.
Preferably, in the second step, the process belt speed of the alumina reaction chamber is set to 185cm/min, the temperature of the alumina reaction chamber is set to 450 ℃, and the pressure of the alumina reaction chamber is set to 0.14 mbar.
Preferably, in the third step, the laughing gas flow rate of the first gas path is 800sccm, the TMA flow rate is 0mg/min, and the argon gas flow rate is 0sccm, and the laughing gas flow rate of the second gas path is 800sccm, the TMA flow rate is 0mg/min, and the argon gas flow rate is 0 sccm.
Preferably, in the fourth step, the radio frequency power of the first gas path of the alumina reaction chamber is 2800W, the duty ratios of the left and right ends of the first gas path of the alumina reaction chamber are 6/17 and 6/18, respectively, the radio frequency power of the second gas path of the alumina reaction chamber is 2800W, and the duty ratios of the left and right ends of the second gas path of the alumina reaction chamber are 6/17 and 6/18, respectively.
The invention has the beneficial effects that:
(1) the method has the advantages that equipment investment is not needed, a Maya PECVD machine is adopted to produce the solar cell panel, three process parameters of gas flow, process temperature and radio frequency power in an alumina cavity are comprehensively optimized and adjusted, and meanwhile, a graphite support plate is kept to continuously enter and exit the Maya PECVD machine without carrying silicon wafers, so that the problem that the first single EL black spot ratio is high after the PECVD machine is maintained can be solved.
(2) The PECVD machine table only needs to adjust the process parameters in the alumina cavity, and increases the ionization of laughing gas and improves the cleaning effect of the bin body by improving the radio frequency power; the aluminum oxide powder has water absorption during maintenance of the Maya machine, so that the water vapor content of the bin body during maintenance is reduced by increasing the temperature during the process, and meanwhile, the graphite support plate continuously enters and exits the Maya machine, so that the bin body is continuously filled with nitrogen and vacuumized, and the impurity content in the bin body is continuously pumped away, thereby realizing the reduction of the problem that the proportion of first single EL black spots is higher after Maya maintenance.
Detailed Description
A silicon nitride film is deposited on the surface of a solar cell by a Plasma Enhanced Chemical Vapor Deposition (PECVD) technology, the working principle is that high-frequency current ionizes gas containing film constituent atoms to form plasma locally, and the plasma with strong chemical activity is easy to react to form a required film on a substrate. The reflection of sunlight on the surface of the silicon wafer can be well reduced, and the reflectivity is reduced. The graphite boat is saturated before the process, and the effect is to deposit a layer of silicon nitride film on the inner wall of the graphite boat, so that all the positions of the inner wall are in a silicon nitride state, the silicon nitride deposition rates at all the positions in the graphite boat tend to be consistent, and the flatness of the inner wall of the graphite boat is consistent. The saturation process is used for depositing a layer of silicon nitride film on the inner wall of the graphite boat, so that all parts of the inner wall are in a silicon nitride state, the silicon nitride deposition rates of all parts in the graphite boat tend to be consistent, the flatness of the inner wall of the graphite boat is consistent, the electric field distribution is uneven due to different flatness, the coating is theoretically uneven, the surface area of the inner wall is changed due to different flatness, the saturation degree is insufficient, and the color difference plate is generated.
The Maya MAIA back plating machine table adopted in the embodiment is provided with two reaction chambers, one chamber is plated with an alumina film, the other chamber is plated with a silicon nitride film, the Maya MAIA back plating machine table needs to be maintained regularly, the maintenance period is 120 hours, the two chambers need to be opened during maintenance to replace quartz tubes in the chambers and to clean deposited alumina and silicon nitride in the chambers, and after maintenance is finished, the two chambers need to be saturated for about 1 hour by a running process, so that the produced silicon wafer efficiency EL and other indexes can meet the production line requirements. Under the premise of ensuring that the conversion efficiency of the battery is not lower than that of the prior art, the process parameter is changed, so that the EL black spot of the first silicon slice after Maya maintenance reaches the level equal to that of a production line.
The first air passage and the second air passage in the alumina reaction chamber provide laughing gas, TMA and argon, wherein the laughing gas is nitrous oxide with the molecular formula of N2And 0, ionizing laughing gas under the action of radio frequency, and then cleaning the surface of the silicon wafer. TMA is trimethylaluminum with molecular formula of Al (CH)3)3After ionization, TMA and laughing gas are subjected to chemical reaction, and an aluminum oxide film is deposited on the surface of the silicon wafer, wherein the specific reaction is as follows:
2Al(CH3)3+3N20→Al2O3+3N2+2CH4+C+1/2H2
2Al(CH3)3+5Ar+20N20→Al2O3+2CO2+4CO+9H2O+20N2+5Ar
the argon Ar is a carrier gas and does not participate in the reaction, and when the argon Ar exists, more laughing gas is consumed to enable TMA to be completely reacted.
The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
A PECVD machine saturation process with low EL black spots is characterized in that the PECVD machine adopts Maya MAIA model equipment, the Maya PECVD machine comprises an alumina reaction chamber and a silicon nitride reaction chamber, the alumina reaction chamber is used for plating an alumina film on the surface of a silicon wafer, and the silicon nitride reaction chamber is used for plating a silicon nitride film on the surface of the alumina film, and the PECVD machine comprises the following steps:
step 1, performing vacuum heating treatment, namely covering bin covers of all bin bodies after maintenance of a Maya PECVD machine is finished, and performing vacuum pumping heating treatment.
Step 2, setting the process belt speed of an alumina reaction chamber of Maya PECVD as 185cm/min, the temperature of a cavity as 300 ℃, the pressure of the alumina reaction chamber as 0.14mbar, the temperature of a silicon nitride reaction chamber as 300 ℃, and the pressure of the silicon nitride reaction chamber as 0.14 mbar;
and 3, setting flow parameters, wherein the alumina cavity of the Maya PECVD comprises two air paths, the laughing gas flow of the first air path is 700sccm, the TMA flow is 400mg/min, the argon flow is 600sccm, the laughing gas flow of the second air path is 700sccm, the TMA flow is 400mg/min, and the argon flow is 600 sccm.
And 4, the radio frequency power of the first air path of the alumina cavity is 2300W, and the duty ratios of the left end and the right end are 6/17 and 6/18 respectively. The radio frequency power of the second air path of the alumina cavity is 2300W, and the duty ratios of the left end and the right end are 6/17 and 6/18 respectively. The pressure during the process was 0.14 mbar.
Step 5, after the process is started, keeping the graphite support plates to continuously enter and exit the Maya PECVD machine, continuously filling nitrogen into the chamber body, vacuumizing the chamber body, and continuously pumping away the impurity content in the chamber body, so that the problem that the first single EL black spot ratio is higher after Maya maintenance is solved, wherein the graphite support plates are rectangular graphite support plates which are 6 in length and 4 in width and are loaded with 24 silicon wafers;
and 6, saturating the machine, and saturating the Maya PECVD machine for 1 hour under the parameter condition.
Example 2
Step 1, performing vacuum heating treatment, namely covering bin covers of all bin bodies after maintenance of a Maya PECVD machine is finished, and performing vacuumizing heating process treatment;
step 2, setting the process belt speed of an alumina cavity of Maya PECVD as 185cm/min, setting the cavity temperature as 350 ℃, setting the pressure of an alumina reaction chamber as 0.14mbar, setting the temperature of a silicon nitride reaction chamber as 300 ℃, and setting the pressure of the silicon nitride reaction chamber as 0.14 mbar;
step 3, setting flow parameters, wherein the alumina cavity of the Maya PECVD comprises two gas circuits, the laughing gas flow of the first gas circuit is 720sccm, the TMA flow is 300mg/min, the argon flow is 600sccm, the laughing gas flow of the second gas circuit is 700sccm, the TMA flow is 300mg/min, and the argon flow is 600 sccm;
and 4, the radio frequency power of the first air path of the alumina cavity is 2500W, and the duty ratios of the left end and the right end are 6/17 and 6/18 respectively. The radio frequency power of a second air path of the alumina cavity is 2500W, the duty ratios of the left end and the right end are 6/17 and 6/18 respectively, and the pressure intensity in the process is 0.14 mbar;
step 5, after the process is started, keeping the graphite support plates to continuously enter and exit the Maya PECVD machine, continuously filling nitrogen into the chamber body, vacuumizing the chamber body, and continuously pumping away the impurity content in the chamber body, so that the problem that the first single EL black spot ratio is higher after Maya maintenance is solved, wherein the graphite support plates are rectangular graphite support plates which are 6 in length and 4 in width and are loaded with 24 silicon wafers;
and 6, saturating the machine, and saturating the Maya PECVD machine for 1 hour under the parameter condition.
Example 3
A PECVD machine saturation process with low EL black spots is characterized in that the PECVD machine adopts Maya MAIA model equipment, the Maya PECVD machine comprises an alumina reaction chamber and a silicon nitride reaction chamber, the alumina reaction chamber is used for plating an alumina film on the surface of a silicon wafer, and the silicon nitride reaction chamber is used for plating a silicon nitride film on the surface of the alumina film, and the PECVD machine comprises the following steps:
step 1, performing vacuum heating treatment, namely covering a bin cover of each bin body after maintenance of a Maya PECVD machine is finished, vacuumizing and heating to set process parameters, wherein the process parameters of a silicon nitride cavity are unchanged;
step 2, setting the process belt speed of an alumina reaction chamber to be 185cm/min, setting the temperature of the alumina reaction chamber to be 350 ℃, setting the pressure of the alumina reaction chamber to be 0.14mbar, setting the temperature of a silicon nitride reaction chamber to be 300 ℃, and setting the pressure of the silicon nitride reaction chamber to be 0.14 mbar;
step 3, setting flow parameters, wherein the alumina reaction chamber comprises a first gas path and a second gas path, setting the laughing gas flow of the first gas path as 740sccm, setting the TMA flow as 200mg/min, setting the argon flow as 300sccm, setting the laughing gas flow of the second gas path as 740sccm, setting the TMA flow as 200mg/min, and setting the argon flow as 300 sccm;
setting radio frequency power and duty ratio parameters of the left end and the right end, setting the radio frequency power of a first gas circuit of the alumina reaction chamber to be 2600W, setting the duty ratios of the left end and the right end of the first gas circuit of the alumina reaction chamber to be 6/17 and 6/18 respectively, setting the radio frequency power of a second gas circuit of the alumina reaction chamber to be 2600W, and setting the duty ratios of the left end and the right end of the second gas circuit of the alumina reaction chamber to be 6/17 and 6/18 respectively;
step 5, after the process is started, keeping the graphite support plates to continuously enter and exit the Maya PECVD machine, continuously filling nitrogen into the chamber body, vacuumizing the chamber body, and continuously pumping away the impurity content in the chamber body, so that the problem that the first single EL black spot ratio is higher after Maya maintenance is solved, wherein the graphite support plates are rectangular graphite support plates which are 6 in length and 4 in width and are loaded with 24 silicon wafers;
and 6, saturating the machine, and saturating the Maya PECVD machine for 1 hour under the parameter condition.
Example 4
A PECVD machine saturation process with low EL black spots is characterized in that the PECVD machine adopts Maya MAIA model equipment, the Maya PECVD machine comprises an alumina reaction chamber and a silicon nitride reaction chamber, the alumina reaction chamber is used for plating an alumina film on the surface of a silicon wafer, and the silicon nitride reaction chamber is used for plating a silicon nitride film on the surface of the alumina film, and the PECVD machine comprises the following steps:
step 1, performing vacuum heating treatment, namely covering a bin cover of each bin body after maintenance of a Maya PECVD machine is finished, vacuumizing and heating to set process parameters, wherein the process parameters of a silicon nitride cavity are unchanged;
step 2, setting the process belt speed of an alumina reaction chamber to be 185cm/min, setting the temperature of the alumina reaction chamber to be 450 ℃, setting the pressure of the alumina reaction chamber to be 0.14mbar, setting the temperature of a silicon nitride reaction chamber to be 300 ℃, and setting the pressure of the silicon nitride reaction chamber to be 0.14 mbar;
step 3, setting flow parameters, wherein the alumina reaction chamber comprises a first gas path and a second gas path, setting the laughing gas flow of the first gas path as 800sccm, setting the TMA flow as 0mg/min, setting the argon flow as 0sccm, setting the laughing gas flow of the second gas path as 800sccm, setting the TMA flow as 0mg/min, and setting the argon flow as 0 sccm;
setting radio frequency power and duty ratio parameters of the left end and the right end, setting the radio frequency power of a first gas path of the alumina reaction chamber to be 2800W, setting the duty ratios of the left end and the right end of the first gas path of the alumina reaction chamber to be 6/17 and 6/18 respectively, setting the radio frequency power of a second gas path of the alumina reaction chamber to be 2800W, and setting the duty ratios of the left end and the right end of the second gas path of the alumina reaction chamber to be 6/17 and 6/18 respectively;
step 5, after the process is started, keeping the graphite support plates to continuously enter and exit the Maya PECVD machine, continuously filling nitrogen into the chamber body, vacuumizing the chamber body, and continuously pumping away the impurity content in the chamber body, so that the problem that the first single EL black spot ratio is higher after Maya maintenance is solved, wherein the graphite support plates are rectangular graphite support plates which are 6 in length and 4 in width and are loaded with 24 silicon wafers;
and 6, saturating the machine, and saturating the Maya PECVD machine for 1 hour under the parameter condition.
Example 5
A PECVD machine saturation process with low EL black spots is characterized in that the PECVD machine adopts Maya MAIA model equipment, the Maya PECVD machine comprises an alumina reaction chamber and a silicon nitride reaction chamber, the alumina reaction chamber is used for plating an alumina film on the surface of a silicon wafer, and the silicon nitride reaction chamber is used for plating a silicon nitride film on the surface of the alumina film, and the PECVD machine comprises the following steps:
step 1, performing vacuum heating treatment, namely covering a bin cover of each bin body after maintenance of a Maya PECVD machine is finished, vacuumizing and heating to set process parameters, wherein the process parameters of a silicon nitride cavity are unchanged;
step 2, setting the process belt speed of an alumina reaction chamber to be 185cm/min, setting the temperature of the alumina reaction chamber to be 500 ℃, setting the pressure of the alumina reaction chamber to be 0.14mbar, setting the temperature of a silicon nitride reaction chamber to be 300 ℃, and setting the pressure of the silicon nitride reaction chamber to be 0.14 mbar;
step 3, setting flow parameters, wherein the alumina reaction chamber comprises a first gas path and a second gas path, setting the laughing gas flow of the first gas path as 850sccm, setting the TMA flow as 0mg/min, setting the argon flow as 0sccm, setting the laughing gas flow of the second gas path as 850sccm, setting the TMA flow as 0mg/min, and setting the argon flow as 0 sccm;
setting radio frequency power and duty ratio parameters of the left end and the right end, setting the radio frequency power of a first gas path of the alumina reaction chamber to be 3000W, setting the duty ratios of the left end and the right end of the first gas path of the alumina reaction chamber to be 6/17 and 6/18 respectively, setting the radio frequency power of a second gas path of the alumina reaction chamber to be 3000W, and setting the duty ratios of the left end and the right end of the second gas path of the alumina reaction chamber to be 6/17 and 6/18 respectively;
step 5, after the process is started, keeping the graphite support plates to continuously enter and exit the Maya PECVD machine, continuously filling nitrogen into the chamber body, vacuumizing the chamber body, and continuously pumping away the impurity content in the chamber body, so that the problem that the first single EL black spot ratio is higher after Maya maintenance is solved, wherein the graphite support plates are rectangular graphite support plates which are 6 in length and 4 in width and are loaded with 24 silicon wafers;
and 6, saturating the machine, and saturating the Maya PECVD machine for 1 hour under the parameter condition.
Effect of various parameters on machine saturation:
(1) reaction chamber temperature: because the adnexed alumina powder of alumina storehouse body can adsorb steam during maintenance, steam decomposes into H ion and hydroxyl in the operation technology, gets into the ALOx rete, and the hydroxyl is absorbed the back by ALOx, and the H ion of positive charge and the ALOx of negative charge form the inward electric field, influence ALOx's back passivation effect, it can cause EL black spot black to appear under the EL to appear blacking, is favorable to the steam evaporation when saturation technology operation with the temperature increase, like this can be along with the vacuum pump is discharged outside the storehouse body. Theoretically, the higher the temperature of the saturation process is, the more favorable the evaporation and the discharge of the water vapor are, and due to the problem of the hardware of the machine station, if the temperature is too high, the heating plate of the machine station is deformed, and the stability of the machine station is affected, so the temperature of the saturation process is not suitable to exceed 450 ℃.
(2) Reaction power: the improvement of the power is more beneficial to the ionization of laughing gas to generate plasma, but if the power is too high, the sealing ring of the quartz tube is easily damaged, and the maximum value 2800 is selected as an experimental example, no matter the power is not more than 2800W.
(3) Laughing gas flow rate: 1, carbon is generated by reaction of laughing gas and TMA in a normal process, EL black spots of the cell can be caused by the existence of the carbon, and the carbon is oxidized to generate carbon dioxide and is exhausted out of the chamber through a vacuum pump when a saturated process is operated. 2, laughing gas can produce plasma through the ionization, and plasma has the bombardment effect to adnexed impurity on the cavity, and impurity can drop gradually along with the bombardment of plasma, also can pass through the vacuum pump discharge chamber outside simultaneously.
(4) TMA and argon flow were zero: if the saturated process is introduced into TMA, the saturated process reacts with laughing gas to produce aluminum oxide, the cleaning effect of the laughing gas on the bin body is influenced, in addition, TMA exists in a liquid form under normal pressure, and the TMA is carried in through argon when entering the alumina bin, so if the TMA flow is set to be 0, the argon flow also needs to be set to be 0.
The experimental contents are as follows: 5000 pieces in the previous process are subjected to piece division treatment and are divided into five 1000 pieces again, a Maya machine station is maintained, the bin body of the Maya machine station is saturated for 1 hour by adopting the embodiment 1, the embodiment 2, the embodiment 3, the embodiment 4 and the embodiment 5, 1000 pieces are produced after the Maya machine station is saturated, the five 1000 pieces are downloaded to the same path after the production is finished, the proportion of the EL black spots and the black spots is counted after screen printing, and the proportion of the EL black spots and the black spots is reduced by about 50 percent compared with that of the original process through tracking for 8 times.
Experimental data table 1:
it is clear from comparison of examples 1, 2, 3, 4 and 5 that the ratio of the EL black spots can be greatly reduced by increasing the temperature, increasing the power, increasing the laughing gas flow rate, and adjusting the TMA and argon flow rates to zero, while the parameter of example 4 is set to the optimized parameter setting.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments or portions thereof without departing from the spirit and scope of the invention.
Claims (7)
1. A PECVD machine saturation process with low EL black spots is carried out in a PECVD reaction chamber, the PECVD machine comprises an alumina reaction chamber and a silicon nitride reaction chamber, and the PECVD machine saturation process is characterized by comprising the following steps:
step one, vacuumizing, namely covering a bin cover of each bin body for vacuumizing after the maintenance of a PECVD machine is finished;
setting the saturation process conditions of a machine, setting the process belt speed of a PECVD machine to be 185-200 cm/min, the temperature of an alumina reaction chamber to be 400-450 ℃, the pressure of the alumina reaction chamber to be 0.11-0.14 mbar, the temperature of a silicon nitride reaction chamber to be 300 ℃, and the pressure of the silicon nitride reaction chamber to be 0.11-0.14 mbar;
setting reaction flow parameters in the machine, wherein the alumina reaction chamber comprises a first gas path and a second gas path, setting the laughing gas flow of the first gas path as 700 sccm-900 sccm, setting the TMA flow as 0mg/min and setting the argon flow as 0sccm, setting the laughing gas flow of the second gas path as 700 sccm-900 sccm, setting the TMA flow as 0mg/min and setting the argon flow as 0 sccm;
setting radio frequency power and duty ratio parameters of the left end and the right end in the machine, setting the radio frequency power of a first gas path of the alumina reaction chamber to be 2500W-2800W, setting the duty ratios of the left end and the right end of the first gas path of the alumina reaction chamber to be 6/17 and 6/18 respectively, setting the radio frequency power of a second gas path of the alumina reaction chamber to be 2500W-2800W, and setting the duty ratios of the left end and the right end of the second gas path of the alumina reaction chamber to be 6/17 and 6/18 respectively;
and step five, the machine is saturated, the graphite carrier plate is kept to continuously enter and exit the PECVD machine under the process parameter conditions of the step two, the step three and the step four, and the PECVD machine is kept standing for 1 hour.
2. The PECVD tool saturation process for low EL black spot as claimed in claim 1, wherein: the PECVD machine is a Maya MAIA back plating machine.
3. The PECVD tool saturation process for low EL black spot as claimed in claim 1, wherein: the graphite carrier plate is a rectangular graphite carrier plate which is 6 long and 4 wide and is loaded with 24 silicon wafers.
4. The PECVD tool saturation process for low EL black spot as in claim 3, wherein: the silicon wafer is one of a P-type monocrystalline silicon wafer or a polycrystalline silicon wafer.
5. The PECVD tool saturation process for low EL black spot as claimed in claim 1, wherein: in the second step, the process belt speed of the alumina reaction chamber is set to be 185cm/min, the temperature of the alumina reaction chamber is set to be 450 ℃, and the pressure of the alumina reaction chamber is set to be 0.14 mbar.
6. The PECVD tool saturation process for low EL black spot as claimed in claim 1, wherein: and thirdly, setting the laughing gas flow rate of the first gas path as 800sccm, the TMA flow rate as 0mg/min and the argon flow rate as 0sccm, and setting the laughing gas flow rate of the second gas path as 800sccm, the TMA flow rate as 0mg/min and the argon flow rate as 0 sccm.
7. The PECVD tool saturation process for low EL black spot as claimed in claim 1, wherein: in the fourth step, the radio frequency power of the first gas path of the alumina reaction chamber is 2800W, the duty ratios of the left and right ends of the first gas path of the alumina reaction chamber are 6/17 and 6/18 respectively, the radio frequency power of the second gas path of the alumina reaction chamber is 2800W, and the duty ratios of the left and right ends of the second gas path of the alumina reaction chamber are 6/17 and 6/18 respectively.
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