CN112362174A - Pulse light detector based on photoacoustic effect and preparation method thereof - Google Patents
Pulse light detector based on photoacoustic effect and preparation method thereof Download PDFInfo
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- CN112362174A CN112362174A CN202011295570.XA CN202011295570A CN112362174A CN 112362174 A CN112362174 A CN 112362174A CN 202011295570 A CN202011295570 A CN 202011295570A CN 112362174 A CN112362174 A CN 112362174A
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- 238000010895 photoacoustic effect Methods 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title abstract description 8
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- 238000004544 sputter deposition Methods 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 12
- 238000005566 electron beam evaporation Methods 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 238000004549 pulsed laser deposition Methods 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000002134 carbon nanofiber Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
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- 238000004140 cleaning Methods 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 3
- -1 polydimethylsiloxane Polymers 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 239000002033 PVDF binder Substances 0.000 claims description 2
- 229940024548 aluminum oxide Drugs 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 229960001866 silicon dioxide Drugs 0.000 claims description 2
- 229960005196 titanium dioxide Drugs 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 238000001228 spectrum Methods 0.000 abstract description 11
- 238000001514 detection method Methods 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 230000021715 photosynthesis, light harvesting Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 64
- 230000000694 effects Effects 0.000 description 12
- 230000008021 deposition Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J11/00—Measuring the characteristics of individual optical pulses or of optical pulse trains
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J2001/4238—Pulsed light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J2001/4295—Photometry, e.g. photographic exposure meter using electric radiation detectors using a physical effect not covered by other subgroups of G01J1/42
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
The invention discloses a pulse light detector based on a photoacoustic effect and a preparation method thereof. The pulse light detector disclosed by the invention is based on the photoacoustic effect, can be used for quickly and accurately analyzing and measuring the energy of the wide-spectrum pulse light, and has the advantages of small energy dissipation and high detection sensitivity.
Description
Technical Field
The invention relates to the field of optics, in particular to a wide-spectrum pulse light detector based on a photoacoustic effect and a preparation method thereof.
Background
With the development of laser technology, pulsed light technology is more mature and widely applied. When measuring the intensity of pulsed light, the influence of the wavelength and the pulse width of the pulsed light must be considered. Currently, the measurement of the intensity of pulsed light is usually performed by converting the energy of the pulsed light into energy of other forms through a photodetector, and then the detection of the intensity of the pulsed light is indirectly achieved. The photoelectric detectors commonly used at present mainly include detectors based on photoelectric effect and detectors based on photothermal effect. The detector based on the photoelectric effect has high response speed, can reach nanosecond level, but has selectivity on the wavelength of pulse light, and cannot measure the pulse light with wide spectrum; the photothermal effect-based detector has no selectivity on the wavelength of the pulse light, can measure the pulse light with a wide spectrum, but has a slow response speed, generally in the order of hundreds of milliseconds, and cannot measure the pulse light with the pulse width of milliseconds or less. Due to the limitation of spectral width and response speed, the current two types of photodetectors cannot realize the measurement of wide-spectrum pulse light with pulse width of millisecond order or less.
Disclosure of Invention
The invention provides a wide-spectrum pulse light detector based on a photoacoustic effect and a preparation method thereof, aiming at the problem that the prior art cannot measure wide-spectrum pulse light with pulse width of millisecond or below.
A wide-spectrum pulse light detector based on a photoacoustic effect comprises a substrate, a low-acoustic-impedance material, a high-acoustic-impedance material, a piezoelectric film, a lower electrode, a photoacoustic film and an upper electrode. The substrate is positioned at the lowest part, the acoustic reflection layer formed by alternately arranging a plurality of periods of low-acoustic-impedance materials and high-acoustic-impedance materials is deposited above the substrate, the piezoelectric film is deposited on the left side above the high-acoustic-impedance materials, the lower electrode is deposited on the right side above the high-acoustic-impedance material layer, the photoacoustic film is deposited on the right side above the piezoelectric film, and the upper electrode is deposited on the left side above the piezoelectric film.
When the photoacoustic detector is used, the photoacoustic film on the uppermost layer of the detector is irradiated by pulse light. After the photoacoustic film is irradiated by the pulse light, the photoacoustic film absorbs the energy of the pulse light to cause instant temperature rise, generates adiabatic expansion, and generates a photoacoustic effect, so that the absorbed energy of the pulse light is converted into mechanical energy and is radiated in the form of ultrasonic waves. Ultrasonic waves radiated from the photoacoustic film enter the piezoelectric film below, mechanical energy of ultrasonic vibration is converted into electric energy due to the piezoelectric effect, induced charges are generated inside the piezoelectric film, and the induced charges are accumulated on the upper surface and the lower surface of the piezoelectric film. The induced charges collected on the lower surface of the piezoelectric film are transmitted through the high-acoustic-impedance material and collected by the lower electrode, the induced charges collected on the upper surface of the piezoelectric film are collected by the upper electrode, and the measurement of the pulse light intensity can be realized by measuring a charge signal between the upper electrode and the lower electrode. An acoustic reflection layer formed by combining and alternately arranging a plurality of periods of low-acoustic-impedance materials and high-acoustic-impedance materials is arranged between the substrate and the piezoelectric film, and ultrasonic waves leaked from the piezoelectric film can be reflected back to the piezoelectric film without being scattered in the substrate, so that the piezoelectric effect is enhanced, and more induced charges can be generated.
Further, the substrate is silicon or glass.
Further, the low acoustic impedance material is titanium, aluminum or silicon dioxide.
Further, the high acoustic impedance material is tungsten, molybdenum or gold.
Further, the piezoelectric film is an aluminum nitride film, a zinc oxide film, a lead zirconate titanate film or a polyvinylidene fluoride film.
Further, the photoacoustic film is a composite film prepared by mixing carbon powder, carbon nano tubes, carbon nano fibers, graphene and polydimethylsiloxane.
Further, the upper electrode material is gold or aluminum.
Further, the lower electrode material is gold or aluminum.
Further, the low acoustic impedance material has a minimum of 1 layer and a maximum of 5 layers.
Further, the high acoustic impedance material has at least 1 layer and at most 5 layers.
Further, the low acoustic impedance material and the high acoustic impedance material are arranged alternately in a periodic manner.
A preparation method of a wide-spectrum pulse light detector based on a photoacoustic effect comprises the steps of substrate cleaning, low-acoustic-impedance material layer deposition, high-acoustic-impedance material layer deposition, piezoelectric film deposition, lower electrode deposition, photoacoustic film preparation and upper electrode deposition.
Further, the substrate cleaning is to sequentially place the substrate into acetone, absolute ethyl alcohol and deionized water, respectively carry out ultrasonic cleaning for 3 minutes, then take out the substrate, and blow-dry the substrate by nitrogen.
Furthermore, the low-acoustic-impedance material layer is deposited by adopting a method of radio frequency sputtering, electron beam evaporation, plasma enhanced chemical vapor deposition or pulsed laser deposition.
Furthermore, the high acoustic impedance material layer is deposited by adopting a method of radio frequency sputtering, electron beam evaporation, plasma enhanced chemical vapor deposition or pulsed laser deposition.
Furthermore, the piezoelectric film deposition is prepared by adopting a method of radio frequency sputtering, electron beam evaporation, plasma enhanced chemical vapor deposition or pulsed laser deposition.
Furthermore, the lower electrode deposition is prepared by adopting a radio frequency sputtering and electron beam evaporation method.
Further, the photoacoustic film is prepared by adopting a spin coating method.
Furthermore, the upper electrode deposition is prepared by adopting a radio frequency sputtering and electron beam evaporation method.
Compared with the prior art, the invention has the following advantages:
the invention adopts the mode of combining the photoacoustic film and the piezoelectric film, the photoacoustic film generates ultrasonic waves due to photoacoustic effect, the ultrasonic waves enter the piezoelectric film below, the piezoelectric effect generates induced charges inside the piezoelectric film, the induced charges are respectively collected by the upper and lower electrodes on the upper and lower surfaces of the piezoelectric film, and the measurement of the pulse light intensity can be realized by measuring the magnitude of the induced charge signal, so that the problems that the wide-spectrum pulse light cannot be measured due to wavelength selectivity of a photoelectric effect-based photodetector and the response speed of the photoelectric detector based on the photothermal effect is low are solved. Because the photoacoustic film and the piezoelectric film are in direct contact, an acoustic coupling layer does not need to be additionally arranged, an acoustic reflecting layer formed by combining and alternately arranging a plurality of periods of low-acoustic-impedance materials and high-acoustic-impedance materials is arranged below the piezoelectric film, ultrasonic waves leaked from the piezoelectric film can be reflected back to the piezoelectric film without being scattered in the substrate, and the measures can improve the utilization rate of the ultrasonic waves and reduce the dissipation of the ultrasonic wave energy, thereby enhancing the piezoelectric effect, generating more induced charges and improving the detection sensitivity. The pulse light detector not only can rapidly and accurately analyze and measure the energy of the wide-spectrum pulse light, but also has the advantages of small ultrasonic energy dissipation and high pulse light detection sensitivity.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention.
In the figure 1-substrate, 2-low acoustic impedance material, 3-high acoustic impedance material, 4-piezoelectric film, 5-photoacoustic film, 6-lower electrode, 7-upper electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention.
The invention provides a pulse light detector based on a photoacoustic effect. As shown in fig. 1, the pulsed light detector includes a substrate 1, a low acoustic impedance material 2, a high acoustic impedance material 3, a piezoelectric film 4, a photoacoustic film 5, a lower electrode 6, and an upper electrode 7. The substrate 1 is positioned lowermost, the first period of low acoustic impedance material 2 is deposited over the substrate 1, the first period of high acoustic impedance material 3 is deposited over the first period of low acoustic impedance material 2, the second period of low acoustic impedance material 2 is deposited over the first period of high acoustic impedance material 3, the second period of high acoustic impedance material 3 is deposited over the second period of low acoustic impedance material 2, the third period of low acoustic impedance material 2 is deposited over the second period of high acoustic impedance material 3, the third period of high acoustic impedance material 3 is deposited over the third period of low acoustic impedance material 2, the piezoelectric film 4 is deposited over the third period of high acoustic impedance material 3 on the left side, the lower electrode 6 is deposited over the third period of high acoustic impedance material 3 on the right side, the photoacoustic film 5 is deposited over the piezoelectric film 4 on the right side, the upper electrode 7 is deposited on the upper left side of the piezoelectric film 4.
When the pulse light is irradiated on the surface of the photoacoustic film 5, the photoacoustic film 5 absorbs the pulse light and then generates an ultrasonic wave inside the photoacoustic film 5 due to the photoacoustic effect. The ultrasonic wave generated by the photoacoustic thin film 5 propagates downward and acts on the piezoelectric thin film 4, and due to the piezoelectric effect, induced charges are generated inside the piezoelectric thin film 4 and are accumulated on the upper and lower surfaces of the piezoelectric thin film. The inductive charges accumulated on the lower surface of the piezoelectric film 4 are transferred through the high-acoustic-impedance material 3 in the third period and collected by the lower electrode 6, the inductive charges accumulated on the upper surface of the piezoelectric film 4 are collected by the upper electrode 7, and the detection of the pulse light intensity can be realized by measuring a charge signal between the lower electrode 6 and the upper electrode 7. An acoustic reflection layer formed by combining and alternately arranging three periods of low-acoustic-impedance materials 2 and high-acoustic-impedance materials 3 is arranged between the substrate 1 and the piezoelectric film 4, and ultrasonic waves leaked by the piezoelectric film 4 can be reflected back to the piezoelectric film 4 without being dissipated in the substrate 1, so that the piezoelectric effect is enhanced, and more induced charge accumulation is obtained between the lower electrode 6 and the upper electrode 7.
Further, the substrate 1 is a silicon wafer, the low acoustic impedance material 2 is titanium, the thickness is 690 nanometers, the high acoustic impedance material 3 is tungsten, the thickness is 620 nanometers, the piezoelectric film 4 is an aluminum nitride film, the thickness is 2580 nanometers, the photoacoustic film 5 is a composite film made by mixing carbon powder, carbon nanotubes, carbon nanofibers, graphene and polydimethylsiloxane, the thickness is 1000 nanometers, the lower electrode 6 is gold, the thickness is 150 nanometers, and the upper electrode 7 is gold, and the thickness is 150 nanometers.
The invention provides a preparation method of a pulse light detector based on a photoacoustic effect, which comprises the following steps:
1. sequentially putting the substrate 1 into acetone, absolute ethyl alcohol and deionized water, respectively carrying out ultrasonic cleaning for 3 minutes, taking out, and drying by nitrogen;
2. firstly, depositing a low acoustic impedance material 2 above a substrate 1 by a radio frequency sputtering method, and depositing a high acoustic impedance material 3 above the low acoustic impedance material 2 by the radio frequency sputtering method; depositing the low acoustic impedance material 2 above the high acoustic impedance material 3 by a radio frequency sputtering method, and depositing the high acoustic impedance material 3 above the low acoustic impedance material 2 by a radio frequency sputtering method; finally, the low acoustic impedance material 2 is deposited above the high acoustic impedance material 3 by a radio frequency sputtering method, and the high acoustic impedance material 3 is deposited above the low acoustic impedance material 2 by a radio frequency sputtering method;
3. the piezoelectric film 4 is deposited on the left side above the high-acoustic-impedance material 3 by a radio frequency sputtering method;
4. the lower electrode 6 is deposited on the upper right side of the high acoustic impedance material 3 by a radio frequency sputtering method;
5. the photoacoustic film 5 is deposited on the upper right side of the piezoelectric film 4 by a spin coating method;
6. the upper electrode 7 is deposited on the upper left side of the piezoelectric film 4 by a radio frequency sputtering method.
Claims (10)
1. The pulse light detector based on the photoacoustic effect is characterized by comprising a substrate, a low-acoustic-impedance material, a high-acoustic-impedance material, a piezoelectric film, a lower electrode, a photoacoustic film and an upper electrode.
2. A photo-acoustic effect based pulsed light detector according to claim 1, characterized in that said low acoustic impedance material is titanium, aluminum or silicon dioxide.
3. A photo-acoustic effect based pulsed light detector according to claim 1, characterized in that said high acoustic impedance material is tungsten, molybdenum or gold.
4. The pulsed light detector based on photoacoustic effect of claim 1, wherein the piezoelectric film is an aluminum nitride film, a zinc oxide film, a lead zirconate titanate film or a polyvinylidene fluoride film.
5. The pulsed light detector based on photoacoustic effect according to claim 1, wherein the photoacoustic film is a composite film made of carbon powder, carbon nanotubes, carbon nanofibers, graphene and polydimethylsiloxane.
6. The pulsed light detector based on photoacoustic effect of claim 1, wherein the material of the upper electrode and the lower electrode is gold or aluminum.
7. The pulsed light detector based on photoacoustic effect as claimed in claim 1, wherein the thickness of the piezoelectric film is 500-5000 nm.
8. A pulsed light detector based on photoacoustic effect as claimed in claim 1, characterized in that the photoacoustic film has a thickness of 500-2000 nm.
9. A photo-acoustic effect based pulsed light detector according to claim 1, characterized in that said low acoustic impedance material and said high acoustic impedance material are arranged alternately in a periodic manner.
10. The method for preparing a pulsed light detector based on photoacoustic effect according to claim 1 is characterized by comprising the following steps:
(1) sequentially ultrasonically cleaning the substrate for 3 minutes by using acetone, absolute ethyl alcohol and deionized water respectively, and drying the substrate by using nitrogen;
(2) depositing a low acoustic impedance material on the substrate by radio frequency sputtering, electron beam evaporation, plasma enhanced chemical vapor deposition or pulsed laser deposition;
(3) depositing a high acoustic impedance material on the low acoustic impedance material by radio frequency sputtering, electron beam evaporation, plasma enhanced chemical vapor deposition or pulsed laser deposition;
(4) depositing a piezoelectric film on the high-acoustic-impedance material by a method of radio frequency sputtering, electron beam evaporation, plasma enhanced chemical vapor deposition or pulsed laser deposition;
(5) depositing a photoacoustic film on the piezoelectric film by a spin coating method;
(6) depositing a lower electrode on the high-acoustic-impedance material by using a radio frequency sputtering and electron beam evaporation method;
(7) and depositing an upper electrode on the piezoelectric film by a radio frequency sputtering and electron beam evaporation method.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011295570.XA CN112362174A (en) | 2020-11-18 | 2020-11-18 | Pulse light detector based on photoacoustic effect and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011295570.XA CN112362174A (en) | 2020-11-18 | 2020-11-18 | Pulse light detector based on photoacoustic effect and preparation method thereof |
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| CN112362174A true CN112362174A (en) | 2021-02-12 |
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| CN202011295570.XA Pending CN112362174A (en) | 2020-11-18 | 2020-11-18 | Pulse light detector based on photoacoustic effect and preparation method thereof |
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