CN213812613U - Pulse light detector based on photoacoustic effect - Google Patents
Pulse light detector based on photoacoustic effect Download PDFInfo
- Publication number
- CN213812613U CN213812613U CN202022679436.1U CN202022679436U CN213812613U CN 213812613 U CN213812613 U CN 213812613U CN 202022679436 U CN202022679436 U CN 202022679436U CN 213812613 U CN213812613 U CN 213812613U
- Authority
- CN
- China
- Prior art keywords
- film
- acoustic impedance
- impedance material
- light detector
- effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010895 photoacoustic effect Methods 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000002134 carbon nanofiber Substances 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 239000002033 PVDF binder Substances 0.000 claims description 2
- 229940024548 aluminum oxide Drugs 0.000 claims description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 229960001866 silicon dioxide Drugs 0.000 claims description 2
- 229960005196 titanium dioxide Drugs 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 239000002238 carbon nanotube film Substances 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 8
- 238000001228 spectrum Methods 0.000 abstract description 7
- 230000021715 photosynthesis, light harvesting Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 56
- 230000000694 effects Effects 0.000 description 12
- 239000010409 thin film Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- -1 polydimethylsiloxane Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Images
Landscapes
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
The utility model discloses a pulse light detector based on optoacoustic effect, the detector include substrate, low acoustic impedance material, high acoustic impedance material, piezoelectric film, bottom electrode, optoacoustic film and last electrode. The utility model discloses a pulse light detector not only can carry out quick accurate analysis and measurement to the energy of wide spectrum pulse light based on the optoacoustic effect, has the advantage that energy dissipation is little and detectivity is high moreover.
Description
Technical Field
The utility model relates to an optics field, concretely relates to broad spectrum pulse light detector based on optoacoustic effect.
Background
With the development of laser technology, pulsed light technology is more mature and widely applied. When measuring the intensity of pulsed light, the influence of the wavelength and the pulse width of the pulsed light must be considered. Currently, the measurement of the intensity of pulsed light is usually performed by converting the energy of the pulsed light into energy of other forms through a photodetector, and then the detection of the intensity of the pulsed light is indirectly achieved. The photoelectric detectors commonly used at present mainly include detectors based on photoelectric effect and detectors based on photothermal effect. The detector based on the photoelectric effect has high response speed, can reach nanosecond level, but has selectivity on the wavelength of pulse light, and cannot measure the pulse light with wide spectrum; the photothermal effect-based detector has no selectivity on the wavelength of the pulse light, can measure the pulse light with a wide spectrum, but has a slow response speed, generally in the order of hundreds of milliseconds, and cannot measure the pulse light with the pulse width of milliseconds or less. Due to the limitation of spectral width and response speed, the current two types of photodetectors cannot realize the measurement of wide-spectrum pulse light with pulse width of millisecond order or less.
Disclosure of Invention
The measurement problem to the broad spectrum pulse light of pulse width millisecond level and below can't be realized to prior art, the utility model provides a broad spectrum pulse light detector based on optoacoustic effect.
A wide-spectrum pulse light detector based on a photoacoustic effect comprises a substrate, a low-acoustic-impedance material, a high-acoustic-impedance material, a piezoelectric film, a photoacoustic film, a lower electrode and an upper electrode. The substrate is positioned at the lowest part, the acoustic reflection layer formed by alternately arranging a plurality of periods of low-acoustic-impedance materials and high-acoustic-impedance materials is deposited above the substrate, the piezoelectric film is deposited on the left side above the high-acoustic-impedance materials, the lower electrode is deposited on the right side above the high-acoustic-impedance material layer, the photoacoustic film is deposited on the right side above the piezoelectric film, and the upper electrode is deposited on the left side above the piezoelectric film.
When the photoacoustic detector is used, the photoacoustic film on the uppermost layer of the detector is irradiated by pulse light. After the photoacoustic film is irradiated by the pulse light, the photoacoustic film absorbs the energy of the pulse light to cause instant temperature rise, generates adiabatic expansion, and generates a photoacoustic effect, so that the absorbed energy of the pulse light is converted into mechanical energy and is radiated in the form of ultrasonic waves. Ultrasonic waves radiated from the photoacoustic film enter the piezoelectric film below, mechanical energy of ultrasonic vibration is converted into electric energy due to the piezoelectric effect, induced charges are generated inside the piezoelectric film, and the induced charges are accumulated on the upper surface and the lower surface of the piezoelectric film. The induced charges collected on the lower surface of the piezoelectric film are transmitted through the high-acoustic-impedance material and collected by the lower electrode, the induced charges collected on the upper surface of the piezoelectric film are collected by the upper electrode, and the measurement of the pulse light intensity can be realized by measuring a charge signal between the upper electrode and the lower electrode. An acoustic reflection layer formed by combining and alternately arranging a plurality of periods of low-acoustic-impedance materials and high-acoustic-impedance materials is arranged between the substrate and the piezoelectric film, and ultrasonic waves leaked from the piezoelectric film can be reflected back to the piezoelectric film without being scattered in the substrate, so that the piezoelectric effect is enhanced, and more induced charges can be generated.
Further, the substrate is silicon or glass.
Further, the low acoustic impedance material is titanium, aluminum or silicon dioxide.
Further, the high acoustic impedance material is tungsten, molybdenum or gold.
Further, the piezoelectric film is an aluminum nitride film, a zinc oxide film, a lead zirconate titanate film or a polyvinylidene fluoride film.
Further, the photoacoustic film is a composite film prepared by mixing carbon powder, carbon nano tubes, carbon nano fibers, graphene and polydimethylsiloxane.
Further, the upper electrode material is gold or aluminum.
Further, the lower electrode material is gold or aluminum.
Further, the low acoustic impedance material has a minimum of 1 layer and a maximum of 5 layers.
Further, the high acoustic impedance material has at least 1 layer and at most 5 layers.
Further, the low acoustic impedance material and the high acoustic impedance material are arranged alternately in a periodic manner.
Compared with the prior art, the utility model has the advantages of it is following:
the utility model discloses a mode that optoacoustic film and piezoelectric film combined together, optoacoustic film is because optoacoustic effect produces the ultrasonic wave, the piezoelectric film of ultrasonic wave entering below, because piezoelectric effect produces induced charge in piezoelectric film is inside, induced charge is collected by the upper and lower electrode of surface about the piezoelectric film respectively, thereby can realize the measurement of pulsed light intensity through measuring the size of this induced charge signal, thereby overcome because the problem of wavelength selectivity unable measurement wide spectrum pulse light and the slow problem of response speed based on optothermal effect photoelectric detector based on photoelectric effect light detector. Because the utility model discloses well optoacoustic film and piezoelectric film directly contact, do not need additionally to increase the acoustics coupled layer, piezoelectric film below is equipped with by a plurality of periods low acoustics impedance material and high acoustics impedance material combination alternative arrangement and the acoustics reflection stratum that constitutes, can reflect back piezoelectric film and do not scatter in the substrate from the ultrasonic wave that piezoelectric film revealed again, these measures all can improve the ultrasonic wave utilization ratio, reduce the dissipation of ultrasonic energy, thereby strengthen the piezoelectric effect, produce more induced charges, improve the sensitivity of surveying. The utility model discloses a pulse light detector not only can carry out quick accurate analysis and measurement to the energy of wide spectrum pulse light, has the advantage that ultrasonic energy dissipation is little and pulse light detection sensitivity is high moreover.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention.
In the figure 1-substrate, 2-low acoustic impedance material, 3-high acoustic impedance material, 4-piezoelectric film, 5-photoacoustic film, 6-lower electrode, 7-upper electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the drawings in the embodiments of the present invention are combined below to clearly and completely describe the technical solutions in the embodiments of the present invention.
The utility model provides a pulse light detector based on optoacoustic effect. As shown in fig. 1, the pulsed light detector includes a substrate 1, a low acoustic impedance material 2, a high acoustic impedance material 3, a piezoelectric film 4, a photoacoustic film 5, a lower electrode 6, and an upper electrode 7. The substrate 1 is positioned lowermost, the first period of low acoustic impedance material 2 is deposited over the substrate 1, the first period of high acoustic impedance material 3 is deposited over the first period of low acoustic impedance material 2, the second period of low acoustic impedance material 2 is deposited over the first period of high acoustic impedance material 3, the second period of high acoustic impedance material 3 is deposited over the second period of low acoustic impedance material 2, the third period of low acoustic impedance material 2 is deposited over the second period of high acoustic impedance material 3, the third period of high acoustic impedance material 3 is deposited over the third period of low acoustic impedance material 2, the piezoelectric film 4 is deposited over the third period of high acoustic impedance material 3 on the left side, the lower electrode 6 is deposited over the third period of high acoustic impedance material 3 on the right side, the photoacoustic film 5 is deposited over the piezoelectric film 4 on the right side, the upper electrode 7 is deposited on the upper left side of the piezoelectric film 4.
When the pulse light is irradiated on the surface of the photoacoustic film 5, the photoacoustic film 5 absorbs the pulse light and then generates an ultrasonic wave inside the photoacoustic film 5 due to the photoacoustic effect. The ultrasonic wave generated by the photoacoustic thin film 5 propagates downward and acts on the piezoelectric thin film 4, and due to the piezoelectric effect, induced charges are generated inside the piezoelectric thin film 4 and are accumulated on the upper and lower surfaces of the piezoelectric thin film. The inductive charges accumulated on the lower surface of the piezoelectric film 4 are transferred through the high-acoustic-impedance material 3 in the third period and collected by the lower electrode 6, the inductive charges accumulated on the upper surface of the piezoelectric film 4 are collected by the upper electrode 7, and the detection of the pulse light intensity can be realized by measuring a charge signal between the lower electrode 6 and the upper electrode 7. An acoustic reflection layer formed by combining and alternately arranging three periods of low-acoustic-impedance materials 2 and high-acoustic-impedance materials 3 is arranged between the substrate 1 and the piezoelectric film 4, and ultrasonic waves leaked by the piezoelectric film 4 can be reflected back to the piezoelectric film 4 without being dissipated in the substrate 1, so that the piezoelectric effect is enhanced, and more induced charge accumulation is obtained between the lower electrode 6 and the upper electrode 7.
Further, the substrate 1 is a silicon wafer, the low acoustic impedance material 2 is titanium, the thickness is 690 nanometers, the high acoustic impedance material 3 is tungsten, the thickness is 620 nanometers, the piezoelectric film 4 is an aluminum nitride film, the thickness is 2580 nanometers, the photoacoustic film 5 is a composite film made by mixing carbon powder, carbon nanotubes, carbon nanofibers, graphene and polydimethylsiloxane, the thickness is 1000 nanometers, the lower electrode 6 is gold, the thickness is 150 nanometers, and the upper electrode 7 is gold, and the thickness is 150 nanometers.
Claims (9)
1. The utility model provides a pulse light detector based on optoacoustic effect, its characterized in that pulse light detector from the bottom up include substrate, low acoustic impedance material, high acoustic impedance material, piezoelectric film, lower electrode, optoacoustic film and last electrode, wherein the substrate is located the below, low acoustic impedance material is located the substrate top, high acoustic impedance material is located low acoustic impedance material top, piezoelectric film is located high acoustic impedance material top left side, the lower electrode is located high acoustic impedance material top right side, optoacoustic film is located piezoelectric film's top right side, the top left side that goes up the electrode and is located piezoelectric film.
2. A photo-acoustic effect based pulsed light detector according to claim 1, characterized in that said low acoustic impedance material is titanium, aluminum or silicon dioxide.
3. A photo-acoustic effect based pulsed light detector according to claim 1, characterized in that said high acoustic impedance material is tungsten, molybdenum or gold.
4. The pulsed light detector based on photoacoustic effect of claim 1, wherein the piezoelectric film is an aluminum nitride film, a zinc oxide film, a lead zirconate titanate film or a polyvinylidene fluoride film.
5. The pulsed light detector based on photoacoustic effect of claim 1, wherein the photoacoustic film is a carbon nanotube film, a carbon nanofiber film or a graphene film.
6. The pulsed light detector based on photoacoustic effect of claim 1, wherein the material of the upper electrode and the lower electrode is gold or aluminum.
7. The pulsed light detector based on photoacoustic effect as claimed in claim 1, wherein the thickness of the piezoelectric film is 500-5000 nm.
8. A pulsed light detector based on photoacoustic effect as claimed in claim 1, characterized in that the photoacoustic film has a thickness of 500-2000 nm.
9. A photo-acoustic effect based pulsed light detector according to claim 1, characterized in that said low acoustic impedance material and said high acoustic impedance material are arranged alternately in a periodic manner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022679436.1U CN213812613U (en) | 2020-11-18 | 2020-11-18 | Pulse light detector based on photoacoustic effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022679436.1U CN213812613U (en) | 2020-11-18 | 2020-11-18 | Pulse light detector based on photoacoustic effect |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213812613U true CN213812613U (en) | 2021-07-27 |
Family
ID=76935731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022679436.1U Active CN213812613U (en) | 2020-11-18 | 2020-11-18 | Pulse light detector based on photoacoustic effect |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213812613U (en) |
-
2020
- 2020-11-18 CN CN202022679436.1U patent/CN213812613U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Catchpole et al. | Plasmonics and nanophotonics for photovoltaics | |
| CN1793874B (en) | Equipment and method for measuring photoelectric performance of semiconductor nanometer structure | |
| JP5638343B2 (en) | Fluorescent sensor | |
| CN101387496B (en) | Micro-displacement sensor based on ring micro-chamber and cantilever beam of integration plane | |
| CN102590112A (en) | Surface microstructure silicon cantilever enhancement type optical-thermal spectrum trace gas detection method and device | |
| CN104795410A (en) | Graphene nanoribbon array terahertz sensor based on optical waveguide | |
| CN103681897B (en) | A kind of infrared photoelectric detector and preparation method thereof | |
| JP5571994B2 (en) | Carbon nanotube aggregate, solar cell, and substrate with waveguide and carbon nanotube aggregate | |
| Smith et al. | Optically excited nanoscale ultrasonic transducers | |
| CN105277271A (en) | Ultrasonic vibrating phase shift fiber grating sensing detection system and application thereof | |
| KR20190107050A (en) | Method and system for performing subsurface imaging using vibration sensing | |
| CN213812613U (en) | Pulse light detector based on photoacoustic effect | |
| US10429411B2 (en) | Near field scanning probe microscope, probe for scanning probe microscope, and sample observation method | |
| CN214173578U (en) | Pulse light detector | |
| US11169176B2 (en) | Photodetector for scanning probe microscope | |
| JP3452658B2 (en) | Integrated SPM sensor | |
| CN102353491B (en) | Second harmonic multi-beam laser heterodyne measurement method for micro impulse based on doppler oscillating mirror sinusoidal modulation | |
| Guo et al. | Broad-band high-efficiency optoacoustic generation using a novel photonic crystal-metallic structure | |
| JP4228774B2 (en) | Optical measuring device | |
| US9865246B2 (en) | Laser-induced ultrasound generator and method of manufacturing the same | |
| CN112362174A (en) | Pulse light detector based on photoacoustic effect and preparation method thereof | |
| JP6928931B2 (en) | Measurement device and measurement sensor | |
| CN111678592A (en) | Pulse light detector based on photoacoustic effect | |
| CN102175314A (en) | Enhanced film bulk acoustic wave resonance ultraviolet detector | |
| CN113933282B (en) | Medium probe for near-field optical detection and near-field microscope |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |