RU2016152065A - METHOD FOR PRODUCING A HETERO JUNCTION NANOCRYSTALLINE SILICON / AMORPHIC HYDROGENIZED SILICON FOR SUNNY ELEMENTS AND SUNNY ELEMENT WITH SUCH A HETERO Junction - Google Patents

METHOD FOR PRODUCING A HETERO JUNCTION NANOCRYSTALLINE SILICON / AMORPHIC HYDROGENIZED SILICON FOR SUNNY ELEMENTS AND SUNNY ELEMENT WITH SUCH A HETERO Junction Download PDF

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RU2016152065A
RU2016152065A RU2016152065A RU2016152065A RU2016152065A RU 2016152065 A RU2016152065 A RU 2016152065A RU 2016152065 A RU2016152065 A RU 2016152065A RU 2016152065 A RU2016152065 A RU 2016152065A RU 2016152065 A RU2016152065 A RU 2016152065A
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silicon
quartz substrate
sunny
amorphous hydrogenated
deposited
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RU2016152065A
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RU2016152065A3 (en
RU2667689C2 (en
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Павел Константинович Кашкаров
Андрей Георгиевич Казанский
Павел Анатольевич Форш
Денис Михайлович Жигунов
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Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В. Ломоносова" (МГУ)
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Priority to RU2016152065A priority Critical patent/RU2667689C2/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Claims (9)

1. Способ получения гетероперехода нанокристаллический кремний/аморфный гидрогенизированный кремний в образце, представляющем собой пленку аморфного гидрогенизированного кремния, нанесенную на кварцевую подложку, включающий облучение образца фемтосекундными лазерными импульсами в вакууме при давлении не более 2⋅10-2 мбар, с центральной длиной волны излучения 257-680 нм, частотой повторения импульсов 20-500 кГц, длительностью импульсов 30-500 фс и плотностью энергии лазерных импульсов 4-500 мДж/см2.1. A method of producing a heterojunction nanocrystalline silicon / amorphous hydrogenated silicon in a sample representing an amorphous hydrogenated silicon film deposited on a quartz substrate, comprising irradiating the sample with femtosecond laser pulses in vacuum at a pressure of not more than 2⋅10 -2 mbar, with a central radiation wavelength 257-680 nm, a pulse repetition rate of 20-500 kHz, a pulse duration of 30-500 fs and a laser pulse energy density of 4-500 mJ / cm 2 . 2. Способ по п. 1, отличающийся тем, что нанесение пленки на кварцевую подложку выполнено посредством плазмохимического осаждения слоя аморфного гидрогенизированного кремния на кварцевую подложку.2. The method according to p. 1, characterized in that the deposition of the film on a quartz substrate is performed by plasma-chemical deposition of a layer of amorphous hydrogenated silicon on a quartz substrate. 3. Способ по п. 1, отличающийся тем, что в качестве пленок используют пленки, полученные методом ионного распыления кремния.3. The method according to p. 1, characterized in that as the films use films obtained by ion sputtering of silicon. 4. Способ по п. 1, отличающийся тем, что в качестве пленок используют пленки, полученные методом термического разложения моносилана.4. The method according to p. 1, characterized in that the films used are films obtained by the thermal decomposition of monosilane. 5. Способ по п. 1, отличающийся тем, что облучение образца лазерными импульсами осуществляют посредством сканирования сфокусированным пучком при скорости сканирования от 1 до 10 мм/с.5. The method according to p. 1, characterized in that the irradiation of the sample with laser pulses is carried out by scanning with a focused beam at a scanning speed of from 1 to 10 mm / s. 6. Способ по п. 5, отличающийся тем, что расстояние между центрами сканированных полос составляет 40 мкм, а шаг сканирования выбирают таким образом, чтобы перекрытие лазерных пучков от соседних полос составляло не менее 80%.6. The method according to p. 5, characterized in that the distance between the centers of the scanned strips is 40 microns, and the scanning step is chosen so that the overlap of the laser beams from adjacent strips is at least 80%. 7. Способ по п. 5, отличающийся тем, что диаметр пучка варьируют от 20 до 100 мкм.7. The method according to p. 5, characterized in that the diameter of the beam varies from 20 to 100 microns. 8. Солнечный элемент, содержащий слой с гетеропереходом нанокристаллический кремний/аморфный гидрогенизированный кремний, полученный в соответствии с пп. 1-7, выполненный на пленке аморфного гидрогенизированного кремния и нанесенный на кварцевую подложку, нанесенный на этот слой металлический электрод и проводящий прозрачный подслой, нанесенный на кварцевую подложку.8. A solar cell containing a layer with a heterojunction nanocrystalline silicon / amorphous hydrogenated silicon, obtained in accordance with paragraphs. 1-7, made on a film of amorphous hydrogenated silicon and deposited on a quartz substrate, a metal electrode deposited on this layer and a conductive transparent sublayer deposited on a quartz substrate. 9. Солнечный элемент по п. 8, отличающийся тем, что металлический электрод выполнен из алюминия или золота, или магния.9. The solar cell according to claim 8, characterized in that the metal electrode is made of aluminum or gold, or magnesium.
RU2016152065A 2016-12-28 2016-12-28 Method for producing nanocrystalline silicon/amorphous hydrogenated silicon heterojunction for solar elements and solar element with such heterojunction RU2667689C2 (en)

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN114678431A (en) * 2022-03-21 2022-06-28 上海集成电路制造创新中心有限公司 Preparation method of photoelectric detector

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RU196426U1 (en) * 2019-12-27 2020-02-28 федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет ИТМО" (Университет ИТМО) Oxide transparent heterojunction

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US20070272297A1 (en) * 2006-05-24 2007-11-29 Sergei Krivoshlykov Disordered silicon nanocomposites for photovoltaics, solar cells and light emitting devices
KR20090029494A (en) * 2007-09-18 2009-03-23 엘지전자 주식회사 Solar cell using amorphous and nano-crystaline silicon composite thin film and fabrication method thereof
CN102569478A (en) * 2012-02-23 2012-07-11 常州天合光能有限公司 Thin-film amorphous silicon N-type crystalline silicon heterojunction tandem solar cell
CN103280496A (en) * 2013-05-31 2013-09-04 浙江正泰太阳能科技有限公司 Method for preparing crystalline silicon heterojunction/microcrystalline silicon thin film laminated photovoltaic cell
RU2599769C2 (en) * 2013-06-13 2016-10-10 Общество с ограниченной ответственностью специальное конструкторско-технологическое бюро "ИНВЕРСИЯ" Method for preparing photoactive multilayer heterostructure of microcrystalline silicone
RU2568421C1 (en) * 2014-07-25 2015-11-20 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Белгородский государственный национальный исследовательский университет", (НИУ "БелГУ") SOLAR CELL BUILT AROUND p-TYPE HETEROSTRUCTURE OF AMORPHOUS AND NANOCRYSTALLINE SILICON NITRIDE - SILICON

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CN114678431A (en) * 2022-03-21 2022-06-28 上海集成电路制造创新中心有限公司 Preparation method of photoelectric detector

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