CN108461412A - On-line monitoring system and semiconductor processing equipment - Google Patents
On-line monitoring system and semiconductor processing equipment Download PDFInfo
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- CN108461412A CN108461412A CN201810242000.0A CN201810242000A CN108461412A CN 108461412 A CN108461412 A CN 108461412A CN 201810242000 A CN201810242000 A CN 201810242000A CN 108461412 A CN108461412 A CN 108461412A
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- 238000012544 monitoring process Methods 0.000 title claims abstract description 48
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000012545 processing Methods 0.000 title claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 37
- 230000005540 biological transmission Effects 0.000 claims abstract description 9
- 230000003287 optical effect Effects 0.000 claims description 27
- 230000004888 barrier function Effects 0.000 claims description 18
- 239000013307 optical fiber Substances 0.000 claims description 18
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- 238000004519 manufacturing process Methods 0.000 description 5
- 238000004611 spectroscopical analysis Methods 0.000 description 5
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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Abstract
A kind of on-line monitoring system of present invention offer and semiconductor processing equipment comprising the first light path, the second light path, sample frequency adjust unit, photoelectric conversion unit and computing unit, and the first light path is used for transmission incident light, and incident light is radiated to wafer surface；Second light path transmits it to photoelectric conversion unit for receiving interference light；Second light path includes the first branch and the second branch, and the two collects interference light and plasma reflected light respectively；Sample frequency adjusts unit for adjusting sample frequency；Photoelectric conversion unit is used to interference light and plasma reflected light being converted to electric signal, and is sent to computing unit；Computing unit is used to obtain light intensity data according to electric signal, and is calculated according to light intensity data and obtain wafer surface thickness.The adjusting of sample frequency not only may be implemented in on-line monitoring system provided by the invention, but also the size of sample frequency can not be limited, and thereby may be ensured that and accurately controls wafer surface thickness.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, and in particular, to a kind of on-line monitoring system and semiconductor machining
Equipment.
Background technology
With the development of semiconductor process technique, a variety of semiconductor equipments are widely used in manufacture of semiconductor, plasma
One step of key in manufacture of semiconductor is etched or is deposited as, plasma apparatus has spread all over major manufacture of semiconductor producing line.Its
In, high speed etching is widely used in encapsulating, the fields such as power electronic devices as one of technique in manufacture of semiconductor.Due to
Etch rate is high, and etching depth is fast, and the real-time high-precision control of real-time monitoring and etching depth to etch topography becomes non-
It is often necessary.Conventional high rate etches, and process engineer often rule of thumb controls the process time to reach the control of etching depth, but
Precision is not high, can not accomplish to accurately control in real time.
For this purpose, currently with IEP (Interferometric Endpoint System, interferometer endpoint detection system)
On-line monitoring system is monitored wafer thickness, which can be etching depth or can also be film thickness.
Fig. 1 is a kind of existing structure chart of on-line monitoring system.Referring to Fig. 1, the on-line monitoring system includes that light source 5, spectrum are soft
Part 6, spectrometer 4 and optical fiber component 2.Wherein, the incident light that corresponding narrow wavelength is emitted by light source 5 enters via optical fiber component 2
In chamber 3, and the surface of chip 7 is radiated to across plasma 1；The light reflected through chip 7 is transmitted to spectrum through optical fiber component 2
In instrument 4；Spectrometer 4 carries out intensity resolution to the reflected light and is examined in spectrometer 4 when the surface thickness of chip 7 changes
Corresponding variation occurs for the light intensity measured, to obtain the spectral intensity of variation；Analysis of the spectral intensity through Spectrum software 6 and
The correspondence of light intensity variation and wafer surface thickness is calculated.
Above-mentioned on-line monitoring system is inevitably present problems in practical applications：
In monitoring process, it usually needs choose the background (plasma that certain time interval carries out plasma spectrometry
Body reflected light) it deducts, therefore, above-mentioned light source 5 selects pulse working mode as shown in Figure 2, swashs in the transmitting of on stages light source 5
Light closes in off stages light source 5, is collected simultaneously the bias light of plasma.But it since 5 frequency of light source is fixed, leads
Cause sample frequency (light source 5 open frequency) that can be limited by the pulse frequency of light source 5, to cause because sampling rate is less than wanting
It asks and leads to not accurately control wafer surface thickness, is i.e. etching depth or deposition thickness；Meanwhile sample frequency cannot be satisfied
Different process requirements.
Invention content
The present invention is directed at least solve one of the technical problems existing in the prior art, it is proposed that a kind of on-line monitoring system
And semiconductor processing equipment, the adjusting of sample frequency not only may be implemented, to meet different technique needs, and sample frequency
The size of rate can not be limited, and thereby may be ensured that and accurately controls wafer surface thickness.
A kind of on-line monitoring system is provided to achieve the purpose of the present invention, for detecting wafer surface thickness, including
One light path, the second light path, sample frequency adjust unit, photoelectric conversion unit and computing unit, wherein first light path is used for
Incident light is transmitted, and the incident light is radiated to the wafer surface；
Second light path transmits it to the photoelectric conversion unit for receiving interference light, and the interference light is
The interference light that reflected light through wafer surface reflection is formed with the incident light；Also, second light path includes first
Branch and the second branch, the two collect the interference light and plasma reflected light respectively；
The sample frequency adjusts unit for adjusting sample frequency, the sample frequency be open first light path and
The first branch simultaneously closes off the frequency of the second branch；
The photoelectric conversion unit is used to the interference light and the plasma reflected light being converted to electric signal, concurrently
It send to the computing unit；
The computing unit is used to obtain light intensity data according to the electric signal, and is calculated and obtained according to the light intensity data
The wafer surface thickness.
Optionally, the sample frequency adjusts unit and includes while being arranged in first light path, the first branch and second
Diaphragm in the light transmission path of branch, the diaphragm includes barrier and driving mechanism, under the driving of the driving mechanism,
The barrier can open first light path and the first branch, simultaneously close off the second branch；Alternatively, described in closing
First light path and the first branch, while opening the second branch；By adjusting the rotary speed of the barrier, to adjust
The sample frequency.
Optionally, the on-line monitoring system further includes shading shielding cylinder, first light path, the first branch and second
Road is arranged in the shading shielding cylinder, and is parallel to the axis of the shading shielding cylinder；
First light path and the first branch are located at the same side of the axis of the shading shielding cylinder, the second branch position
In the offside of first light path and the first branch of the axis of the shading shielding cylinder；
The rotary shaft of the barrier and the axis of the shading shielding cylinder coincide, and are provided with out on the barrier
Mouthful, under the driving of the driving mechanism, the opening rotation to position corresponding with first light path and the first branch,
To open first light path and the first branch or opening rotation to position corresponding with the second branch
It sets, to open the second branch.
Optionally, first light path, the first branch and the second branch are optical fiber, and the optical fiber is divided into relatively, and
First part every setting and second part, and light can be transmitted to the second part by the first part；The light
Door screen is arranged between the first part and the second part.
Optionally, it includes power supply that the sample frequency, which adjusts unit, and the power supply is used to press predeterminated frequency, to for providing
The light source power supply of the incident light；By adjusting the size of the predeterminated frequency, to adjust the sample frequency；
The photoelectric conversion unit includes the first subelement and the second subelement, the two be respectively used to the interference light and
The plasma reflected light is converted to electric signal；Wherein, power supply triggering synchronous with first subelement；The power supply
With the asynchronous triggering of the second subelement.
Optionally, the photoelectric conversion unit includes photomultiplier；
By adjusting the voltage being applied on the photomultiplier, to adjust the intensity of the optical signal.
Optionally, the on-line monitoring system further includes optical filter box, and the optical filter box is for filtering described the
The interference light in the incident light, the first branch in one light path and the plasma in the second branch
Body reflected light, so that the light of specified wavelength passes through.
Optionally, the optical filter box includes the filter of rotary shaft and the multiple and different wavestrips being arranged around the rotary shaft
Mating plate, the rotary shaft is for driving multiple optical filter rotations, so that the filter plate of wherein three specified wavelengths moves respectively
It moves to the light transmission path of first light path, the first branch and the second branch.
Optionally, the quantity of the optical filter is 8, and the central angle between two adjacent optical filters is 45 °.
Optionally, the on-line monitoring system further includes lens, and the transmitting terminal in first light path is arranged in the lens
Between the receiving terminal and the wafer surface of second light path, it is used for the incident light divergent radiation to the chip table
Face, while the reflected light being converged to the receiving terminal for being radiated to second light path.
As another technical solution, the present invention also provides a kind of semiconductor processing equipments, including reaction chamber, described
It is provided with the pedestal for bearing wafer in reaction chamber, and is provided with top electrode mechanism at the top of the reaction chamber, also
Including above-mentioned on-line monitoring system provided by the invention, for detecting wafer surface thickness.
Optionally, the on-line monitoring system further includes lens, and the transmitting terminal in first light path is arranged in the lens
Between the receiving terminal and the wafer surface of second light path, it is used for the incident light divergent radiation to the chip table
Face, while the reflected light being converged to the receiving terminal for being radiated to second light path；
The output end of first light path and the input terminal of second light path are located at the top of the lens；The photoelectricity
Converting unit and computing unit are respectively positioned on the outside of the reaction chamber.
Optionally, the top electrode mechanism includes medium window, and the medium window is arranged in the top of the pedestal；It is described
Mirror is arranged in the medium window, and positioned at the center position of the medium window, and the lens are from the medium window
Side far from the pedestal is exposed；
Alternatively, the center position on the medium window is arranged in the lens, and it is located remotely from the side of the pedestal.
The invention has the advantages that：
On-line monitoring system provided by the invention, by the first light path by incident radiation to wafer surface, by
Both first branch and the second branch in two light paths collect interference light and plasma reflected light respectively, while by sampling frequency
Rate adjusts unit and adjusts sample frequency, which is to open the first light path and the first branch, simultaneously closes off the second branch
Frequency closes the first light path and first so as to realize while carrying out the background collection of plasma spectrometry every time
Road, this compared with prior art, the size of sample frequency can not be limited, thereby may be ensured that accurately control wafer surface thickness
Degree.In addition, the adjusting that sample frequency may be implemented in unit is adjusted by sample frequency, to meet different technique needs.
Semiconductor processing equipment provided by the invention, by using above-mentioned on-line monitoring system provided by the invention, no
The adjusting that sample frequency only may be implemented, to meet different technique needs, and the size of sample frequency can not be limited,
It thereby may be ensured that and accurately control wafer surface thickness.
Description of the drawings
Fig. 1 is a kind of existing structure chart of on-line monitoring system；
Fig. 2 is the schematic diagram of the pulse working mode of existing light source；
Fig. 3 is the structure chart for the on-line monitoring system that first embodiment of the invention provides；
Fig. 4 is the structure chart for the diaphragm that first embodiment of the invention uses；
Fig. 5 is the structure chart for the photomultiplier that first embodiment of the invention uses；
Fig. 6 is the schematic diagram on incident radiation to wafer surface；
Fig. 7 is the structure chart for the optical filter box that first embodiment of the invention uses；
Fig. 8 is the structure chart for the on-line monitoring system that second embodiment of the invention provides；
Fig. 9 is the sectional view of semiconductor processing equipment provided in an embodiment of the present invention.
Specific implementation mode
To make those skilled in the art more fully understand technical scheme of the present invention, come below in conjunction with the accompanying drawings to the present invention
The on-line monitoring system and semiconductor processing equipment of offer are described in detail.
Referring to Fig. 3, the on-line monitoring system that first embodiment of the invention provides, for real during carrying out technique
When detect wafer surface thickness, with realize it is accurately controlled.The wafer surface thickness can be that the etching of etching technics is deep
The film thickness of degree or depositing operation.The on-line monitoring system includes the first light path 39, the second light path, sample frequency adjusting list
Member, photoelectric conversion unit and computing unit, wherein the first light path 39 is used for transmission the incident light from light source 43, and this is entered
Penetrate surface emissivity of the light to chip 22.The optical fiber head 37 of first light path 39 is located at the top of chip 22, which is to use
In the piecing devices with lens of fixed optical fiber, which can only projection light.
Second light path transmits it to photoelectric conversion unit for receiving interference light, which is through wafer surface
The interference light that the reflected light of reflection is formed with incident light；Also, the second light path includes the first branch 40 and the second branch 41, the two
Above-mentioned interference light and plasma reflected light are collected respectively, specifically, the optical fiber head 38 of the second light path is located at the top of chip 22,
And be arranged side by side with the optical fiber head 37 of above-mentioned first light path 39, which is similarly for fixing the with lens of optical fiber
Piecing devices.So-called plasma reflected light refers to plasma 21 after absorbing incident light, the light reflected.In reality
In, which needs to remove after some time has elapsed as bias light, and when removing bias light,
It must shut off above-mentioned first light path 39 and the first branch 40.
Sample frequency adjusts unit for adjusting sample frequency, which is to open the first light path 39 and the first branch
40, simultaneously close off the frequency of the second branch 41, that is, it realizes while carrying out the background collection of plasma spectrometry every time,
Close the first light path 39 and the first branch 40, this compared with prior art, the size of sample frequency can not be limited, so as to
To ensure to accurately control wafer surface thickness.Simultaneously as above-mentioned sample frequency, which adjusts unit, can adjust sample frequency, therefore
Different technique needs can be met.
In the present embodiment, above-mentioned sample frequency adjusts unit and includes while being arranged in the first light path 39, the first branch 40
With the diaphragm 49 in the light transmission path of the second branch 41, as shown in figure 4, the diaphragm 48 include barrier 491 and driving mechanism
(not shown), under the driving of driving mechanism, barrier 491 can open the first light path 39 and the first branch 40, close simultaneously
Close the second branch 41；Alternatively, closing the first light path 39 and the first branch 40, while the second branch 41 is opened, to realize
While carrying out the background collection of plasma spectrometry every time, the first light path 39 and the first branch 40 are closed.In addition, passing through adjusting
The rotary speed of barrier 491 can adjust sample frequency.The rotary speed is higher, then sample frequency is bigger；Anyway, then it samples
Frequency is smaller.If for example, rotary speed be 6000 revolutions per seconds, sample frequency 6000Hz.
Sample frequency is only dependent upon the rotating speed of the barrier 491 of above-mentioned diaphragm 48, and the size of sample frequency is unrestricted, therefore
Different technique needs can be met.
In the present embodiment, on-line monitoring system further includes shading shielding cylinder 47, the first light path 39, the first branch 40 and
Two branches 41 are arranged in shading shielding cylinder 47, and are parallel to axis (the shading shielding cylinder 47 in Fig. 3 of shading shielding cylinder 47
Axis in horizontal direction).Preferably, the first light path 39 and the first branch 40 are located at the same side of the axis of shading shielding cylinder 47
(upside), the second branch 41 are located at the first light path 39 of the axis of shading shielding cylinder 47 and the offside (downside) of the first branch 40.
By make the first light path 39 and the first branch 40 be located at shading shielding cylinder 47 axis the same side, be convenient for incident light and interference light
Do reference.
Moreover, the rotary shaft of barrier 491 and the axis of shading shielding cylinder 47 coincide, and it is provided with out on barrier 491
Mouth 492, under the driving of driving mechanism, 492 rotation of opening to position corresponding with the first light path 39 and the first branch 40, with
The first light path 39 and the first branch 40 are opened, while barrier 491 encloses the second branch 41；Alternatively, 492 rotation of opening is to the
Two branches, 41 corresponding position, to open the second branch 41, while barrier 491 encloses the first light path 39 and the first branch
40。
In addition, the first light path 39, the first branch 40 and the second branch 41 are optical fiber, which is divided into relatively, and is spaced
The first part of setting and second part (such as the first part for the first pipeline 39 being located in Fig. 3 in shading shielding cylinder 47 and
Second part is located at the position of the left and right ends of shading shielding cylinder 47), and light can be transmitted in first part
To second part；Diaphragm 49 is arranged between first part and second part, is switched on or switched off to light path with realizing.
On-line monitoring system further includes lens 36, the lens 36 be arranged the first light path 39 transmitting terminal (optical fiber head 37) and
Between 22 surface of receiving terminal (optical fiber head 38) and chip of second light path, it is used for by incident light divergent radiation to wafer surface, together
When reflected light convergence is radiated to the receiving terminal of the second light path, so as to further increase light intensity.
Photoelectric conversion unit is used to interference light and plasma reflected light being converted to electric signal, and is sent to computing unit
46.In the present embodiment, photoelectric conversion unit includes the first subelement 45 and the second subelement 46, and the two is respectively used to interfere
Light and plasma reflected light are converted to electric signal.Computing unit 46 is used for according to electric signal acquisition light intensity data, and according to
The light intensity data, which calculates, obtains wafer surface thickness.Computing unit 46 is handled the electric signal when receiving electric signal,
Processing procedure includes mainly that difference calculates, signal converts sampling etc., to obtain light intensity data.
In the prior art, referring to Fig. 6, when etching depth increases, since etching bottom is rough, to incident light
Be reflected into non-mirror reflection, this can cause etching bottom to block the reflection of light generation, and the signal of reflected light is caused to weaken,
The remitted its fury of interference light is eventually led to, and the photoelectric converter (such as CCD device) used in the prior art can only be in light intensity
Signal acquisition could be carried out more than certain numerical value, that is, there are certain threshold value relationships with light intensity for the electric current of electrooptical device, should
Electrooptical device needs certain photoelectric conversion time, if desired enhances light intensity signal, then photoelectric conversion time increases, to
It can limited samples frequency.Meanwhile for the larger technique of etching depth, due to deep trouth to light block cause to be emitted intensity compared with
It is low, it is unable to reach the light intensity lower limit for allowing signal acquisition, to which photoelectric conversion capacity is weaker, noise is relatively low.For this purpose, it is preferred that
, 45 and second subelement 46 of above-mentioned first subelement is photomultiplier, and the light is applied on power supply 451 by adjusting
Voltage on electric multiplier tube, to adjust the intensity of optical signal, even if to when spectral signal intensity is weaker if can obtain compared with
High optical signal improves the signal-to-noise ratio of optical signal.
As shown in figure 5, photomultiplier is the electron vacuum device based on external photoeffect and effect of secondary electron emission.
It makes the photo-multiplier of effusion using secondary, obtains the sensitivity far above photoelectric tube, can measure faint light
Signal.Successively added with the positive voltage gradually increased on each electrode and anode, and the voltage between two adjacent electrodes
Difference should make secondary emissionratio be more than 1.In this way, electrons under the action of electric field with high fast direction electrode, and generate more
Secondary emission electron so continues, and the secondary emission electron that excitation is multiplied by each photoelectron is finally received by anode
Collection, obtains stronger optical signal.The response time of photomultiplier is fast, does not influence the sampling time under high sample frequency.Work as quarter
Depth enhancing is lost, can gradually change voltage in technical process according to etching demand on the basis of initially set voltage
Size.It follows that photomultiplier is the adjusting signal intensity by the way of adjusting voltage, and used by the prior art
Non-temporal integral way uses the time so as to effectively shorten, improves sample frequency.
On-line monitoring system further includes optical filter box 48, and the optical filter box 48 is for filtering entering in the first light path 39
Light, the interference light in the first branch 40 and the plasma reflected light in the second branch 41 are penetrated, so that the light of specified wavelength is logical
It crosses, to meet the needs of etachable material.
Preferably, as shown in fig. 7, optical filter box 48 include rotary shaft 42 and around the rotary shaft 42 setting it is multiple not
With the optical filter 481 of wavestrip, rotary shaft 42 is for driving multiple optical filters 481 to rotate, so that the filter of wherein three specified wavelengths
Wave plate 481 is respectively moved in the light transmission path of the first light path 39, the first branch 40 and the second branch 41, to filter respectively
Light on three optical fiber transmission paths.For example, the quantity of optical filter 481 can be 8, and two adjacent optical filters 481 it
Between central angle be 45 °.The angle is easy to implement the centering of light path and filter plate.
The on-line monitoring system that second embodiment of the invention provides, compared with above-mentioned first embodiment, difference only exists
In the structure that sample frequency adjusts unit is different.
Specifically, as shown in figure 8, it includes power supply 51 that the sample frequency, which adjusts unit, which is used to press predeterminated frequency,
It powers to light source 43；Also, by the size for adjusting the predeterminated frequency, to adjust sample frequency.Also, power supply 51 turns with photoelectricity
The first subelement 44 for changing unit synchronizes triggering；The 45 asynchronous triggering of power supply 51 and the second subelement.In this way, working as power supply 51 to light source
It when 43 power supply, is triggered since power supply 51 is synchronouss with the first subelement 44 of photoelectric conversion unit, then while the first light path 39 and the
One branch 40 is opened, and due to the 45 asynchronous triggering of power supply 51 and the second subelement, then the second branch 41 is still in closed state；
Conversely, when power supply 51 stops powering to light source 43, the first light path 39 and the first branch 40 are closed, and the second branch
41 are opened, and to realize while carrying out the background collection of plasma spectrometry every time, close the first light path 39 and the
One branch 40, this compared with prior art, the size of sample frequency can not be limited, and thereby may be ensured that and accurately controls chip
Surface thickness.
In conclusion the on-line monitoring system that the above-mentioned each embodiment of the present invention provides, may be implemented carrying out every time etc.
While the background collection of gas ions spectrum, close the first light path and the first branch, this compared with prior art, sample frequency
Size can not be limited, and thereby may be ensured that and accurately controls wafer surface thickness.It can in addition, adjusting unit by sample frequency
To realize the adjusting of sample frequency, to meet different technique needs.
As another technical solution, referring to Fig. 9, the embodiment of the present invention also provides a kind of semiconductor processing equipment, packet
Reaction chamber is included, the pedestal 23 for bearing wafer 22 is provided in the reaction chamber, and be arranged at the top of reaction chamber
There is top electrode mechanism.Also, further include the on-line monitoring system that the above-mentioned each embodiment of the present invention provides, for detecting chip table
Face thickness.
Semiconductor processing equipment provided in an embodiment of the present invention is provided by using the above-mentioned each embodiment of the present invention
The adjusting of sample frequency not only may be implemented in on-line monitoring system, and to meet different technique needs, and sample frequency is big
It is small to can not be limited, it thereby may be ensured that and accurately control wafer surface thickness.
In the present embodiment, above-mentioned top electrode mechanism includes medium window 20, is arranged in the top of pedestal 23.Lens 36 are set
It sets in medium window 20, and positioned at the center position of medium window 20, and lens 36 are from the separate pedestal 23 of medium window 20
Side is exposed, and lens 36 are not exposed in the side of the close pedestal 23 of medium window 20, to avoid lens 36 with etc.
Gas ions are in direct contact, and are avoided lens 36 from being etched, are influenced technique.Also, the output end (optical fiber head 37) of the first light path 39 and
The input terminal (optical fiber head 38) of second light path is located at the top of lens 36；Photoelectric conversion unit and computing unit 46 are respectively positioned on reaction
The outside of chamber.
Said lens 36 are arranged by the way of embedded in medium window 20, this can reduce medium window 20 and decline to light source
The interference subtracted etc..Meanwhile the center by the way that lens 36 to be placed on to medium window 20, can to avoid technique inhomogeneities etc. because
Influence of the element to spectrum, so as to improve the etching homogeneity or deposition uniformity of chip.
It should be noted that in the present embodiment, lens 36 are arranged by the way of embedded in medium window 20.But this
Invention is not limited thereto, and in practical applications, the center position on medium window 20 can also be arranged in lens 36, and is located at
Side far from pedestal 23, that is, lens 36 are located at the upper surface of medium window 20.
In addition, top electrode mechanism further includes the coil 19 being arranged above medium window 20, successively with upper adaptation 17 and
Upper radio-frequency power supply 16 is electrically connected.The radio-frequency power that upper radio-frequency power supply 16 provides is loaded onto coil 19, and is coupled by medium window 20
Into reaction chamber, the process gas that excitation enters reaction chamber by air inlet pipeline 18 generates plasma 21.In addition, pedestal
23 are electrically connected by lower adaptation 24 and lower radio-frequency power supply 25, can generate bias on 22 surface of chip, attract plasma
Etch wafer surface.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, in the essence for not departing from the present invention
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (13)
1. a kind of on-line monitoring system, for detecting wafer surface thickness, which is characterized in that including the first light path, the second light path,
Sample frequency adjusts unit, photoelectric conversion unit and computing unit, wherein first light path is used for transmission incident light, and will
The incident light is radiated to the wafer surface；
Second light path transmits it to the photoelectric conversion unit for receiving interference light, and the interference light is through institute
State the interference light that the reflected light of wafer surface reflection is formed with the incident light；Also, second light path includes the first branch
And the second branch, the two collect the interference light and plasma reflected light respectively；
It is to open first light path and first that the sample frequency, which adjusts unit for adjusting sample frequency, the sample frequency,
Branch simultaneously closes off the frequency of the second branch；
The photoelectric conversion unit is used to the interference light and the plasma reflected light being converted to electric signal, and is sent to
The computing unit；
The computing unit is used to obtain light intensity data according to the electric signal, and is calculated described in acquisition according to the light intensity data
Wafer surface thickness.
2. on-line monitoring system according to claim 1, which is characterized in that it includes simultaneously that the sample frequency, which adjusts unit,
Diaphragm in the light transmission path of first light path, the first branch and the second branch is set, and the diaphragm includes barrier
And driving mechanism, under the driving of the driving mechanism, the barrier can open first light path and the first branch,
Simultaneously close off the second branch；Alternatively, closing first light path and the first branch, while opening described second
Road；By adjusting the rotary speed of the barrier, to adjust the sample frequency.
3. on-line monitoring system according to claim 2, which is characterized in that the on-line monitoring system further includes eclipser
Cylinder is covered, first light path, the first branch and the second branch are arranged in the shading shielding cylinder, and are parallel to the shading
The axis of shielding cylinder；
First light path and the first branch are located at the same side of the axis of the shading shielding cylinder, and the second branch is located at institute
State the offside of first light path and the first branch of the axis of shading shielding cylinder；
The rotary shaft of the barrier and the axis of the shading shielding cylinder coincide, and opening is provided on the barrier,
Under the driving of the driving mechanism, the opening rotation is to position corresponding with first light path and the first branch, to open
First light path and the first branch or opening rotation extremely position corresponding with the second branch are opened, with
Open the second branch.
4. on-line monitoring system according to claim 2, which is characterized in that first light path, the first branch and second
Branch is optical fiber, and the optical fiber is divided into relatively, and spaced first part and second part, and first part's energy
It is enough that light is transmitted to the second part；The diaphragm is arranged between the first part and the second part.
5. on-line monitoring system according to claim 1, which is characterized in that it includes electricity that the sample frequency, which adjusts unit,
Source, the power supply is used to press predeterminated frequency, to the light source power supply for providing the incident light；By adjusting the predeterminated frequency
Size, to adjust the sample frequency；
The photoelectric conversion unit includes the first subelement and the second subelement, and the two is respectively used to the interference light and described
Plasma reflected light is converted to electric signal；Wherein, power supply triggering synchronous with first subelement；The power supply and institute
State the asynchronous triggering of the second subelement.
6. according to the on-line monitoring system described in claim 1-5 any one, which is characterized in that the photoelectric conversion unit packet
Include photomultiplier；
By adjusting the voltage being applied on the photomultiplier, to adjust the intensity of the optical signal.
7. according to the on-line monitoring system described in claim 1-5 any one, which is characterized in that the on-line monitoring system is also
Including optical filter box, the optical filter box is for filtering the incident light in first light path, the first branch
In the interference light and the plasma reflected light in the second branch so that the light of specified wavelength passes through.
8. on-line monitoring system according to claim 7, which is characterized in that the optical filter box includes rotary shaft and encloses
Around the optical filter of multiple and different wavestrips of rotary shaft setting, the rotary shaft is used to drive multiple optical filters rotations,
So that the light that the filter plate of wherein three specified wavelengths is respectively moved to first light path, the first branch and the second branch passes
On defeated path.
9. on-line monitoring system according to claim 8, which is characterized in that the quantity of the optical filter is 8, and adjacent
Two optical filters between central angle be 45 °.
10. according to the on-line monitoring system described in claim 1-5 any one, which is characterized in that the on-line monitoring system
Further include lens, the lens are arranged in the transmitting terminal of first light path and the receiving terminal of second light path and the chip
Between surface, for the incident light divergent radiation to be radiated to institute to the wafer surface, while by reflected light convergence
State the receiving terminal of the second light path.
11. a kind of semiconductor processing equipment, including reaction chamber are provided with the base for bearing wafer in the reaction chamber
Seat, and top electrode mechanism is provided at the top of the reaction chamber, which is characterized in that further include claim 1-10 any one
On-line monitoring system described in, for detecting wafer surface thickness.
12. semiconductor processing equipment according to claim 11, which is characterized in that the on-line monitoring system further includes
Mirror, the lens be arranged first light path transmitting terminal and second light path receiving terminal and the wafer surface it
Between, for the incident light divergent radiation to be radiated to described second to the wafer surface, while by reflected light convergence
The receiving terminal of light path；
The output end of first light path and the input terminal of second light path are located at the top of the lens；The opto-electronic conversion
Unit and computing unit are respectively positioned on the outside of the reaction chamber.
13. semiconductor processing equipment according to claim 12, which is characterized in that the top electrode mechanism includes medium
Window, the medium window are arranged in the top of the pedestal；The lens are arranged in the medium window, and are located at the medium window
Center position, and the lens are exposed from side of the medium window far from the pedestal；
Alternatively, the center position on the medium window is arranged in the lens, and it is located remotely from the side of the pedestal.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810242000.0A CN108461412A (en) | 2018-03-22 | 2018-03-22 | On-line monitoring system and semiconductor processing equipment |
| TW108100296A TWI704329B (en) | 2018-03-22 | 2019-01-04 | Online monitoring system and semiconductor processing equipment |
| PCT/CN2019/070450 WO2019179215A1 (en) | 2018-03-22 | 2019-01-04 | On-line monitoring system and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810242000.0A CN108461412A (en) | 2018-03-22 | 2018-03-22 | On-line monitoring system and semiconductor processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108461412A true CN108461412A (en) | 2018-08-28 |
Family
ID=63237141
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810242000.0A Pending CN108461412A (en) | 2018-03-22 | 2018-03-22 | On-line monitoring system and semiconductor processing equipment |
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| Country | Link |
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| CN (1) | CN108461412A (en) |
| TW (1) | TWI704329B (en) |
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| TW201940834A (en) | 2019-10-16 |
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