CN207074638U - Reaction chamber - Google Patents
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- CN207074638U CN207074638U CN201720625747.5U CN201720625747U CN207074638U CN 207074638 U CN207074638 U CN 207074638U CN 201720625747 U CN201720625747 U CN 201720625747U CN 207074638 U CN207074638 U CN 207074638U
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Abstract
The utility model provides a kind of reaction chamber, including chuck and speckle interference detection means；Speckle interference detection means includes light source, optical-electrical converter and processor；The optical signal of the light source output is divided into object light and reference light；The object light is launched to the surface of the chip and reflexes to the optical-electrical converter, and the reference light is directly launched to the optical-electrical converter；The optical-electrical converter is used to the optical signal of the object light received and reference light being converted to electric signal and sent to processor；Processor is used to obtain speckle interference striped based on electric signal, to judge the state of the chip according to the speckle interference striped.The utility model can improve the degree of accuracy of wafer state detection.
Description
Technical field
The utility model belongs to microelectronic processing technique field, and in particular to a kind of reaction chamber.
Background technology
In IC chip manufacturing, in the whole flow process being processed to chip, generally including photoetching, quarter
The techniques such as erosion, ion implanting, metal deposit, die package.In plasma etching industrial, etching machine is by caused by photoetching process
The photoresistance pattern such as line, face or hole, loyalty is inerrably transferred in the material under photoresistance, to form whole integrated circuit
The due complicated architectures of institute.In dry etch process it is generally necessary to place the wafer on the chuck in reaction chamber, to chip
It is processed；Chuck plays support, fixed wafer, the effect such as is controlled to technical process chip temperature；And generally adopt at present
With electrostatic chuck, electrostatic chuck is a kind of chuck structure using electrostatic force fixed wafer, and it is complicated to eliminate mechanical chuck,
The shortcomings of effective working (finishing) area of chip is reduced, still, often completed using electrostatic chuck in releasing wafer process (Dechuck)
Afterwards, however it remains electrostatic residual charge, the electrostatic residual charge cause the generation of film dancing, bonding die phenomenon, so, generally result in
The breakage of chip, so as to cause economic loss.
For this reason, it may be necessary to detect the state of chip in real time to avoid the generation of above mentioned problem, Fig. 1 is existing reaction chamber
Structural representation, referring to Fig. 1, medium window 1 is provided with the top of reaction chamber 5, the top of medium window 1 installation inductance-coupled coil
2, upper radio frequency source 4 is connected by adaptation 3 with inductance-coupled coil 2, for will be from the input cavity chamber processes gas of inlet duct 50
Body is excited into plasma 6.Lower radio frequency source 14 is connected to the matrix of electrostatic chuck 11 by lower adaptation 13, in the table of chip 7
Face produces DC auto-bias, attracts plasma to be moved towards chip 7, to be processed to the surface of chip 7.Electrostatic chuck
11 are arranged on chuck pedestal 12, and the embedded DC electrode 10 in the inside of electrostatic chuck 11, the surrounding of DC electrode 10 is by insulating materials
Parcel.The inside of electrostatic chuck 11 and chuck pedestal 12 is additionally provided with cold media gas passage 9, and cold media gas is from cold media gas air inlet
Mouth carries out air-blowing with certain pressure or flow to the back of chip 7, so as to realize the temperature control of chip 7 in technical process.Directly
Power supply 15 is flowed before technique starts, and DC electrode 10 is powered, makes to produce electrostatic force between DC electrode 10 and chip 7, fixes
The process (Chuck) of chip 7, as fixed wafer, after the completion of technique, to the loading of dc source 15 and pole during Chuck
The opposite DC voltage of property, to eliminate the electric charge between DC electrode 10 and chip 7, with releasing wafer (Dechuck)；Reacting
Video camera 60 is additionally provided with the side wall of chamber 5, for captured in real-time photo, to judge the state of chip 7 based on the photo.
In actual applications, the photo shot according only to video camera 60, it is difficult to judge the state of chip 7 well, i.e.
The degree of accuracy for detecting the state of chip 7 is bad.
Utility model content
The utility model is intended at least solve one of technical problem present in prior art, it is proposed that a kind of reaction chamber
Room, can detect the state of chip well, and can improve the degree of accuracy of wafer state detection.
One of to solve the above problems, the utility model provides a kind of reaction chamber, is provided with it for carrying
The chuck of chip, the reaction chamber also include：For detecting the speckle interference detection means of the wafer surface conditions；It is described
Speckle interference detection means includes light source, optical-electrical converter and processor；The optical signal of the light source output is divided into object light and ginseng
Examine light；The object light is launched to the surface of the chip and reflexes to the optical-electrical converter, and the reference light is directly launched extremely
The optical-electrical converter；The optical-electrical converter, for the optical signal of the object light received and the reference light to be changed
For electric signal and send to the processor；The processor, for obtaining speckle interference striped based on the electric signal, with root
The state of the chip is judged according to the speckle interference striped.
Preferably, the speckle interference detection means also includes input lens component and output lens component；The input
Lens subassembly includes the first lens subassembly and the second lens subassembly；The output lens component includes the 3rd lens subassembly；It is described
First lens subassembly and second lens subassembly are arranged on the first side wall of the reaction chamber；3rd lens subassembly
It is arranged in the reaction chamber second sidewall relative with the first side wall；The object light passes through first lens subassembly
Behind transmitting to the surface of the chip and reflection the optical-electrical converter is reached by the 3rd lens subassembly；The reference light
Launch by second lens subassembly and the 3rd lens subassembly to the optical-electrical converter.
Preferably, the speckle interference detection means also includes cone, and the 3rd lens subassembly goes out light path quilt
It is limited in the cone, the cone is fixed in the second sidewall of the reaction chamber, for making by described
The object light of three lens subassemblies and the reference light reach the optical-electrical converter in the cone.
Preferably, the speckle interference detection means also includes input lens；The input lens are arranged on the reaction
On the roof of chamber, and the position of chip described in face, the object light are launched to the table of the chip by the input lens
The input lens, which are again passed by, behind face and reflection reaches the optical-electrical converter.
Preferably, the speckle interference detection means also includes output lens and cone, and the output lens are arranged on
In the cone, the cone is set independently of the reaction chamber, and the object light and the reference light are by described defeated
Go out lens and the optical-electrical converter is reached in the cone.
Preferably, the speckle interference detection means also includes：Auxiliary optical fiber with two-way single-input single-output passage
Coupler；The auxiliary fiber coupler, it is described defeated for the object light to be reached by first via single-input single-output passage
Enter lens；And reach the output thoroughly by the second tunnel single-input single-output passage from the object light that the input lens reflect
Mirror.
Preferably, the light source includes monochromatic source, white light source or microwave light source.
Preferably, the speckle interference detection means also includes input optical fibre coupler；The light source and the input light
Fine coupler is connected, and the optical signal of the light source output is by being divided into the object light and described after the input optical fibre coupler
Reference light.
Preferably, the input optical fibre coupler is the fiber coupler of single-input double-output, its input and the light
Source is connected；One output end is used to export the object light, and another output end is used to export the reference light.
The utility model has the advantages that：
Reaction chamber of the present utility model, by being provided for detecting the speckle interference detection means of wafer surface conditions,
The situation of change for the speckle interference striped that can be obtained according to speckle interference detection means determines whether testee deforms upon,
Thus the processing chamber can detect the state of chip well, and can improve the degree of accuracy of wafer state detection.
Brief description of the drawings
Fig. 1 is the structural representation of existing reaction chamber；
Fig. 2 is a kind of structural representation for reaction chamber that the utility model embodiment 1 provides；
Fig. 3 is the structural representation for another reaction chamber that the utility model embodiment 1 provides；
Fig. 4 is speckle interference detection principle diagram；
Fig. 5 a and Fig. 5 b are respectively that testee surface deforms upon front and rear speckle interference striped schematic diagram；
Fig. 6 is the structural representation of the auxiliary fiber coupler of two-way single-input single-output；
Fig. 7 is the structural representation of the input optical fibre coupler of single-input double-output.
Embodiment
To make those skilled in the art more fully understand the technical solution of the utility model, come below in conjunction with the accompanying drawings to this
The reaction chamber that utility model provides is described in detail.
The present embodiment provides a kind of reaction chamber, refers to Fig. 2 and Fig. 3, is provided with the reaction chamber for carrying
The chuck 23 of chip 22, reaction chamber also includes：For detecting the speckle interference detection means of the surface state of chip 22；Speckle is done
Relating to detection means includes light source 29 and optical-electrical converter 34.The optical signal that light source 29 exports is divided into object light and reference light；Object light is sent out
It is incident upon the surface of chip 22 and reflexes to optical-electrical converter 34, reference light is directly launched to optical-electrical converter 34；Optical-electrical converter
34 are used to the optical signal of the object light received and reference light being converted to electric signal, and speckle interference striped is obtained based on electric signal,
To judge the state of chip 22 according to speckle interference striped.
Preferably, speckle interference detection means also includes input optical fibre coupler 30；Light source 29 and input optical fibre coupler
30 are connected, and the optical signal that light source 29 exports after input optical fibre coupler 30 by being divided into object light and reference light.By the optical fiber
The optical signal that light source 29 is sent is divided into object light and reference light by coupler 30, can make obtained object light and the complete phase of reference light
Together, be advantageous to improve the detection accuracy of speckle interference detection means.
In this embodiment, alternatively, as shown in Fig. 2 speckle interference detection means also includes input lens component and defeated
Go out lens subassembly；Input lens component includes the first lens subassembly 26 and the second lens subassembly 27；Output lens component includes the
Three lens subassemblies 28；First lens subassembly 26 and the second lens subassembly 27 are arranged on the first side wall of reaction chamber (in Fig. 2
Left side wall) on；The second sidewall relative with the first side wall in 3rd lens subassembly 28 embedded in reaction chamber is (in Fig. 2
Right side wall) on；Object light is after the first lens subassembly 26 is launched to the surface of chip 22 and reflection by the 3rd lens subassembly 28
Reach optical-electrical converter 34；Reference light is launched to optical-electrical converter by the second lens subassembly 27 and the 3rd lens subassembly 28
34。
It is further preferred that speckle interference detection means also includes cone 33, cone 33 is fixed on reaction chamber
In second sidewall, for making object light and reference light by the 3rd lens subassembly 28 reach optical-electrical converter in cone 33
34, this way it is possible to avoid the optical signal in external environment condition produces interference on detection process or influenceed.
In this embodiment, alternatively, as shown in figure 3, speckle interference detection means also includes input lens 36 and light connects
Receive transmission assembly；Input lens 36 are arranged on the roof of reaction chamber and the position of face chip 22 is (for example, can be embedded in
On the roof of reaction chamber, it can also be arranged on the surface of roof)；Object light is launched to the table of chip 22 by input lens 36
Optical-electrical converter 34 is reached after face and reflection by input lens 36 and light-receiving transmission assembly successively.
Further, speckle interference detection means also includes output lens 46 and cone 33, and output lens 46 are arranged on
In cone 33, for reaching optical-electrical converter in the cone by the object light and reference light of output lens 46
34, this way it is possible to avoid the optical signal in external environment condition produces interference on detection process or influenceed.
Cone 33 is set independently of the reaction chamber, and certainly, in actual applications, cone 33 both can be such as Fig. 2
It is shown to be fixedly installed with reaction chamber.Outside cone 33 is set independently of reaction chamber so that the dismounting of cone 33,
Fairly simple convenience is installed.
With reference to the operation principle that speckle interference detection means is described in detail.
As shown in figure 4, it is speckle interference detection principle diagram, the laser that light source (laser in Fig. 4) is sent is through light splitting
Mirror B1 divide two-beam, wherein a branch of (object light) invests testee after lens L1, another beam (reference light) is then successively through reflection
Interfered after mirror M1, M2 and M3 through lens L3 as coherent light with object light at spectroscope B2, the speckle with speckle information
Interference fringe carries out opto-electronic conversion processing afterwards into optical-electrical converter (CCD in Fig. 4).The sub-fraction that spectroscope B1 is separated swashs
Light (reference light) is radiated at light (object light) phase returned after a semi-transparent semi-reflecting lens B2 with the diffusing reflection of testee surface after expanding
Converge and interfere in CCD target surfaces.Wherein, the COMPLEX AMPLITUDE of reference light can be expressed as formula (1)：
UR=uR(r)expφR(r) (1)
In formula (1), uRAnd φ (r)R(r) be respectively reference light amplitude and phase.
The light intensity I (r) that object light and reference light are formed on CCD target surfaces can be expressed as formula (2)：
After testee deforms upon, the speckle field amplitude u of its surface each point0(r) it is basically unchanged, and phase0Will
Change into φ0- Δ φ (r), i.e. U'0(r)=u0(r)exp[φ0(r)-Δφ(r)].Due to testee deformation RELATED APPLICATIONS
Light remains unchanged, therefore the synthesis light intensity I'(r after testee deformation) formula (3) can be expressed as：
In being measured due to speckle interference, stored using videograph and digitlization, thus can be by before testee deformation
Two width interference fields separate afterwards, therefore generally use size reduction mode information representation mode, i.e., such as formula (4)：
From formula (4), the light intensity subtracted each other after handling is to include high frequency carrier item phase (φ0-φR)+Δφ
(r) low frequency fringes [sin (Δ φ (r)/2)]/2.The low frequency fringes depend on phase of light wave caused by testee deformation and become
Change.This phase of light wave changes can derive with testee deformation relationship from the theory of light wave propagation, specific light wave
Phase place change and testee deformation relationship such as formula (5).
In formula (5), λ is the wavelength of laser used, and θ is illumination light and the angle of testee surface normal, and W is tested
The acoplanarity displacement of deformation of body, U are direction displacement in the face of testee deformation.
It can be seen that according to formula (4) and formula (5)：When measured surface deforms upon, speckle interference bar before and after deformation
Line will be changed, therefore the deformation degree on testee surface can be judged according to speckle interference stripe order recognition.
Above-mentioned reaction chamber specifically judge chip 22 whether film dancing (whether chip offsets), bonding die Main Basiss be：
When chip 22 is not deforming upon or without film dancing, bonding die (surface is normal condition), what optical-electrical converter 34 obtained
Speckle interference striped should be uniform interference fringe (as shown in Figure 5 a) from inside to outside, with the gradual rise of chip 22, its figure
5a speckle interferences striped equably can be moved from inside to outside.When the generation film dancing of chip 22 or bonding die, (surface is improper shape
State) when, the global displacement on the surface of chip 22 is inconsistent, and center acoplanarity displacement is perhaps larger, and this will cause the surface of chip 22
Center dimpling deformation, when deformation quantity is a few micron dimensions, will observe that speckle interference striped unevenly changes, show as
Interfering detection zone to occur close outside interior dredge or dredging interior close speckle interference striped outside, as shown in Figure 5 b.
Based on above-mentioned speckle interference Cleaning Principle, in the reaction chamber shown in the present embodiment Fig. 2, for the state of chip 22
Detect using speckle interference on-line checking and be specially：Light source 29 first, as lasing light emitter produces laser beam through input optical fibre coupler
30 points are object light and reference light, and object light is transmitted to the first lens subassembly 26 through optical fiber 31 and optical fiber head, and reference light is through the He of optical fiber 32
Optical fiber head is transmitted to the second lens subassembly 27.As shown in Fig. 2 object light parallel chip 22 that is incident to after the first lens subassembly 26
Central area surface, the center surface diffraction light of chip 22 enter the 3rd lens subassembly 28.Reference light is after the second lens subassembly 27
Direct parallel projection is interferenceed to the 3rd lens subassembly 28, and with object light.Relevant speckle interference striped is through the 3rd lens subassembly
Transmitted after 28 through cone 33 to optical-electrical converter 34 (such as CCD) and carry out opto-electronic conversion, optical-electrical converter 34 changes optical signal
For electric signal, electric signal is through being connected to after computer equipment (that is, processor 35) imaging software of reaction chamber is handled to speckle
Interference fringe is reappeared, you can obtains the speckle interference striped shown in Fig. 5 a and Fig. 5 b.
More specifically, as shown in Fig. 2 the optical signal that light source 29 exports reaches input optical fibre coupler 30, light by optical fiber
The object light that fine coupler 30 is sent is projected by optical fiber 31 by optical fiber head towards the first lens subassembly 26；Fiber coupler 30 is sent out
The reference light gone out is projected by optical fiber 32 by optical fiber head towards the second lens subassembly 27.
Based on above-mentioned speckle interference Cleaning Principle, in the reaction chamber shown in the present embodiment Fig. 3, for the state of chip 22
Detect using speckle interference on-line checking and be specially：In Fig. 3, laser beam caused by light source 29 divides after input optical fibre coupler 30
For reference light and object light.Object light reaches optical fiber head 37 after optical fiber 49, optical fiber 39, and enters the 4th lens subassembly 36, through the 4th
The object light parallel projection of lens subassembly 36 is to the surface of chip 22, and the object light with speckle signals is through reflexing to optical fiber head 38, and extremely
Enter cone 33 after optical fiber 40, optical fiber 41 with converging by the reference light of optical fiber 42, and to light after the 5th lens subassembly 46
Electric transducer 34, after the data processing software by the computer equipment (that is, processor 35) of external reaction chamber, speckle is done
Striped is related to present to computer equipment.
More specifically, as shown in figure 3, the optical signal that light source 29 exports reaches input optical fibre coupler 30, light by optical fiber
The object light that fine coupler 30 is sent is projected by optical fiber head 37 towards the 4th lens subassembly 36 again by optical fiber 49 and 39, light-receiving
Transmission assembly includes optical fiber head 38, optical fiber 40 and optical fiber 41, and the object light reflected passes through optical fiber head 38, optical fiber 40 and optical fiber 41
Transport in cone 33；The reference light that fiber coupler 30 is sent is transmitted to cone 33 by optical fiber 42；Wherein optical fiber head
37 be the optical fiber head for only sending optical signal；Optical fiber head 38 is the optical fiber head for only receiving optical signal.
In this embodiment, alternatively, as shown in figure 3, speckle interference detection means also includes：Two-way single-input single-output
Auxiliary fiber coupler 43；Fiber coupler 43 is aided in be used for auxiliary optical fiber of the object light Jing Guo first via single-input single-output
Coupler is launched to the surface of chip 22；And the auxiliary optical fiber coupler reflectivity Jing Guo the second tunnel single-input single-output to photoelectricity turns
Parallel operation 34.
Specifically, the first via input of fiber coupler 43 is aided in be connected with input optical fibre coupler 30, the first via is defeated
Go out end to be used for towards the surface emitting by object light towards chip 22；Second tunnel output end is connected with cone 33, the input of the second tunnel
Hold for receiving the object light reflected again.Wherein, aid in the structural representation of fiber coupler 43 as shown in Figure 6.
More specifically, the object light projected from input optical fibre coupler 30 enters first via auxiliary fiber coupling after optical fiber 49
Device 43, and the 4th lens subassembly 36 is reached by the output end of first via auxiliary fiber coupler 43, optical fiber 39, optical fiber head 37.Through
The object light that 4th lens subassembly 36 reflects enters the second tunnel auxiliary fiber coupler 43 after optical fiber head 38, optical fiber 41, and
Cone 33 is reached by the output end of the second tunnel auxiliary fiber coupler 43.
Alternatively, light source 29 is one kind in monochromatic source, white light source and microwave light source.Due to 29 optional class of light source
Type is relatively more so that the reaction chamber in the present embodiment is applicable not only to different types of light source, applied widely, and can be with
The type of light source 29 is flexibly selected as needed.
Alternatively, input optical fibre coupler 30 is the fiber coupler of single-input double-output, its input and the phase of light source 29
Even；One output end is used to export object light, and another output end is used to export reference light.Concrete structure is as shown in fig. 7, it is list
Input the structural representation of the input optical fibre coupler of dual output.
Alternatively, reaction chamber includes but is not limited to for inductively coupled plasma chamber, capacitance coupling plasma chamber
One kind in room, physical vapor deposition chamber, surface wave plasma chamber and electron cyclotron plasma chamber.Due to reaction
The type of chamber is relatively more so that the reaction chamber in the present embodiment can detect the wafer-like in different type reaction chamber
State, the scope of application are wider.
It should be noted that as shown in Figures 2 and 3, reaction chamber also includes：The radio-frequency power letter that radio-frequency power supply 16 provides
Number matched device 17 excites the work for entering chamber by admission line 18 to being coupled to by dielectric layer 20 in chamber after coil 19
Skill gas produces plasma 21.It is coupled to after the matched device 24 of rf power signal that lower power supply 25 provides in chuck 23, with
Back bias voltage is produced in wafer surface, to attract plasma to be moved towards chip, the technique such as performs etching to chip 22；In addition,
Chuck 23 can be but be not limited to electrostatic chuck, with electrostatic adsorption force fixed wafer 22.
It is understood that embodiment of above is merely to illustrate that principle of the present utility model and used exemplary
Embodiment, but the utility model is not limited thereto.For those skilled in the art, this is not being departed from
In the case of the spirit and essence of utility model, various changes and modifications can be made therein, and these variations and modifications are also considered as this reality
With new protection domain.
Claims (9)
1. a kind of reaction chamber, the chuck for bearing wafer is provided with it, it is characterised in that the reaction chamber also wraps
Include：For detecting the speckle interference detection means of the wafer surface conditions；
The speckle interference detection means includes light source, optical-electrical converter and processor；
The optical signal of the light source output is divided into object light and reference light；
The object light is launched to the surface of the chip and reflexes to the optical-electrical converter, and the reference light is directly launched to institute
State optical-electrical converter；
The optical-electrical converter, it is concurrent for the optical signal of the object light received and the reference light to be converted into electric signal
Deliver to the processor；
The processor, for obtaining speckle interference striped based on the electric signal, to be judged according to the speckle interference striped
The state of the chip.
2. reaction chamber according to claim 1, it is characterised in that it is saturating that the speckle interference detection means also includes input
Mirror assembly and output lens component；
The input lens component includes the first lens subassembly and the second lens subassembly；
The output lens component includes the 3rd lens subassembly；
First lens subassembly and second lens subassembly are arranged on the first side wall of the reaction chamber；
3rd lens subassembly is arranged in the reaction chamber second sidewall relative with the first side wall；
The object light is after first lens subassembly is launched to the surface of the chip and reflection by the 3rd lens
Component reaches the optical-electrical converter；
The reference light is launched to the optical-electrical converter by second lens subassembly and the 3rd lens subassembly.
3. reaction chamber according to claim 2, it is characterised in that the speckle interference detection means also includes shading
Cylinder, the light path that goes out of the 3rd lens subassembly are limited in the cone, and the cone is fixed on the reaction chamber
In the second sidewall of room, for making the object light and the reference light by the 3rd lens subassembly in the cone
Reach the optical-electrical converter.
4. reaction chamber according to claim 1, it is characterised in that it is saturating that the speckle interference detection means also includes input
Mirror；
The input lens are arranged on the roof of the reaction chamber, and the position of chip described in face, and the object light is passed through
The input lens again pass by the input lens and reach the opto-electronic conversion after launching to the surface of the chip and reflection
Device.
5. reaction chamber according to claim 4, it is characterised in that it is saturating that the speckle interference detection means also includes output
Mirror and cone, the output lens are arranged in the cone, and the cone is set independently of the reaction chamber, institute
State object light and the reference light reaches the optical-electrical converter by the output lens in the cone.
6. reaction chamber according to claim 5, it is characterised in that the speckle interference detection means also includes：Have
The auxiliary fiber coupler of two-way single-input single-output passage；
The auxiliary fiber coupler, it is saturating for the object light to be reached into the input by first via single-input single-output passage
Mirror；And make to reach the output thoroughly by the second tunnel single-input single-output passage from the object light that the input lens reflect
Mirror.
7. reaction chamber according to claim 1, it is characterised in that the light source include monochromatic source, white light source or
Microwave light source.
8. reaction chamber according to claim 1, it is characterised in that
The speckle interference detection means also includes input optical fibre coupler；
The light source is connected with the input optical fibre coupler, and the optical signal of the light source output couples by the input optical fibre
It is divided into the object light and the reference light after device.
9. reaction chamber according to claim 8, it is characterised in that the input optical fibre coupler is single-input double-output
Fiber coupler, its input is connected with the light source；One output end is used to export the object light, and another output end is used
In the output reference light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720625747.5U CN207074638U (en) | 2017-06-01 | 2017-06-01 | Reaction chamber |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720625747.5U CN207074638U (en) | 2017-06-01 | 2017-06-01 | Reaction chamber |
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| CN207074638U true CN207074638U (en) | 2018-03-06 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461412A (en) * | 2018-03-22 | 2018-08-28 | 北京北方华创微电子装备有限公司 | On-line monitoring system and semiconductor processing equipment |
| CN108987224A (en) * | 2017-06-01 | 2018-12-11 | 北京北方华创微电子装备有限公司 | The method of wafer state in reaction chamber and detection reaction chamber |
| CN110582155A (en) * | 2018-06-08 | 2019-12-17 | 北京北方华创微电子装备有限公司 | plasma glow starting detection device and method and process chamber |
-
2017
- 2017-06-01 CN CN201720625747.5U patent/CN207074638U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987224A (en) * | 2017-06-01 | 2018-12-11 | 北京北方华创微电子装备有限公司 | The method of wafer state in reaction chamber and detection reaction chamber |
| CN108461412A (en) * | 2018-03-22 | 2018-08-28 | 北京北方华创微电子装备有限公司 | On-line monitoring system and semiconductor processing equipment |
| CN110582155A (en) * | 2018-06-08 | 2019-12-17 | 北京北方华创微电子装备有限公司 | plasma glow starting detection device and method and process chamber |
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