CN112362167A - Microbridge infrared detector and preparation method thereof - Google Patents
Microbridge infrared detector and preparation method thereof Download PDFInfo
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- CN112362167A CN112362167A CN202011073565.4A CN202011073565A CN112362167A CN 112362167 A CN112362167 A CN 112362167A CN 202011073565 A CN202011073565 A CN 202011073565A CN 112362167 A CN112362167 A CN 112362167A
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- 238000002360 preparation method Methods 0.000 title claims description 11
- 239000010410 layer Substances 0.000 claims abstract description 262
- 238000005530 etching Methods 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 238000002955 isolation Methods 0.000 claims abstract description 35
- 239000011241 protective layer Substances 0.000 claims abstract description 26
- 238000002161 passivation Methods 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 14
- 230000001681 protective effect Effects 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000011247 coating layer Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 238000001514 detection method Methods 0.000 description 59
- 238000010521 absorption reaction Methods 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008054 signal transmission Effects 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 210000003850 cellular structure Anatomy 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- MXOSECBTSFQUJS-UHFFFAOYSA-N [O-2].[Ti+4].[V+5] Chemical compound [O-2].[Ti+4].[V+5] MXOSECBTSFQUJS-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
Abstract
The present disclosure relates to a microbridge infrared detector and a method for manufacturing the same, the microbridge infrared detector includes a read-out circuit substrate; the micro-bridge structure comprises a plurality of column through hole etching protective layers which are positioned on one side of the sacrificial layer, away from the read-out circuit substrate, and are arranged in contact with the sacrificial layer, the projection of a hole-shaped structure formed at the position of the column through hole etching protective layer, corresponding to the position of the hollow column structure, on the read-out circuit substrate is overlapped with the projection of a hole-shaped structure formed at the position of the sacrificial layer, corresponding to the hollow column structure, on the read-out circuit substrate, and the column through hole etching protective layers and the sacrificial layer are etched simultaneously to form a plurality of column through holes; the micro-bridge structure also comprises a thermosensitive layer, an isolation medium layer, an electrode layer and a passivation layer which are sequentially arranged on the column through hole etching protective layer. Through the technical scheme, the roughness of the inner wall of the column through hole is reduced, and the improvement of the sensitivity of the micro-bridge infrared detector is facilitated.
Description
Technical Field
The disclosure relates to the technical field of infrared detection, in particular to a microbridge infrared detector and a preparation method thereof.
Background
The non-contact infrared detector comprises a non-contact temperature measuring sensor, for example, and the detection principle is that the infrared detector converts an infrared radiation signal emitted by a target object to be detected into a thermal signal, the thermal signal is converted into an electric signal through a detector sensitive element, the electric signal is processed and output through a circuit chip, and the infrared detector realizes an infrared detection function.
The infrared detector generally includes a pillar structure disposed on the circuit for supporting the microbridge structure, and the electrical signal finally formed by the sensitive element of the detector needs to be transmitted to the circuit chip through the pillar structure. At present, in the preparation process of an infrared detector, the roughness of the inner wall of the hollow column structure is large, so that the transmission speed of an infrared detection electric signal at the hollow column structure is reduced, the uniformity of the transmission of the infrared detection electric signal between different infrared detection pixels is poor, and the infrared detection performance of the infrared detector is influenced. In addition, receive the great hollow column structure's of inner wall roughness influence, the upper shed's that leads to the post through-hole that forms size is great for infrared detector's sensitivity is difficult to promote, is unfavorable for realizing infrared detector's miniaturization.
Disclosure of Invention
In order to solve the technical problems or at least partially solve the technical problems, the present disclosure provides a micro-bridge infrared detector and a method for manufacturing the same, which reduces the roughness of the inner wall of the pillar via and is beneficial to improving the sensitivity of the micro-bridge infrared detector.
In a first aspect, the present disclosure provides a microbridge infrared detector, comprising:
a readout circuit substrate;
a plurality of hollow pillar structures located on the readout circuitry substrate, the hollow pillar structures for supporting a microbridge structure of the infrared detector after release of a sacrificial layer on the readout circuitry substrate;
the micro-bridge structure comprises a column through hole etching protection layer which is positioned on one side of the sacrificial layer, which is far away from the reading circuit substrate, and is in contact with the sacrificial layer, and the projection of a hole-shaped structure formed by the column through hole etching protection layer corresponding to the position of the hollow column structure on the reading circuit substrate is overlapped with the projection of a hole-shaped structure formed by the sacrificial layer corresponding to the position of the hollow column structure on the reading circuit substrate; wherein the post via etching protection layer and the sacrificial layer are etched simultaneously to form a plurality of post vias;
the micro-bridge structure further comprises a thermosensitive layer, an isolation medium layer, an electrode layer and a passivation layer which are sequentially arranged on the column through hole etching protection layer.
Optionally, in a direction parallel to the readout circuit substrate, an opening size of a hole structure formed by the pillar via etching protection layer corresponding to the position of the hollow pillar structure is less than or equal to 3 micrometers.
Optionally, a material constituting the sacrificial layer includes polyimide, and a material constituting the column via etching protection layer includes one or more of silicon oxide, silicon nitride, silicon oxynitride, and silicon carbide.
Optionally, the isolation dielectric layer, the metal pillar covering layer, the electrode layer and the passivation layer are sequentially arranged in the hollow pillar structure.
Optionally, the microbridge infrared detector further includes:
and a column connecting disc-shaped structure positioned between the reading circuit substrate and the hollow column structure, wherein a protective dielectric layer is further arranged on one side of the column connecting disc-shaped structure, which is far away from the reading circuit substrate.
Optionally, the metal column cover layer is connected to the column connection disc structure through a porous structure formed by the isolation medium layer corresponding to the hollow column structure and a porous structure formed by the protection medium layer corresponding to the hollow column structure, and the electrode layer in the hollow column structure is in contact with the metal column cover layer.
In a second aspect, the present disclosure provides a method for manufacturing a microbridge infrared detector, including:
forming a sacrificial layer on a readout circuit substrate;
sequentially forming a column through hole etching protective layer and a thermosensitive layer on the sacrificial layer;
etching the heat-sensitive layer to form a patterned heat-sensitive structure;
simultaneously etching the column through hole etching protection layer and the sacrificial layer to form a plurality of column through holes;
and sequentially forming an isolation dielectric layer, an electrode layer and a passivation layer on the patterned thermosensitive structure, and forming a plurality of hollow column structures on the readout circuit substrate.
Optionally, before forming the sacrificial layer on the readout circuit substrate, the method further includes:
forming a pillar connecting disk structure on the readout circuit substrate;
and depositing a protective dielectric layer on the column connection disc-shaped structure and etching the deposited protective dielectric layer to form a hole-shaped structure exposing at least part of the column connection disc-shaped structure.
Optionally, sequentially forming an isolation dielectric layer, an electrode layer, and a passivation layer on the thermosensitive layer, and forming a plurality of hollow pillar structures on the readout circuit substrate, includes:
depositing the isolation medium layer and etching the isolation medium layer corresponding to the position of the column through hole to form a hole-shaped structure;
forming a metal pillar capping layer covering the pillar via; the metal column covering layer is arranged in contact with the column connecting disc-shaped structure through a hole-shaped structure formed by the isolation medium layer and a hole-shaped structure formed by the protection medium layer;
etching the isolation medium layer to expose partial area of the patterned thermosensitive structure;
depositing the electrode layer and etching to form a patterned electrode structure; wherein the patterned electrode structure is disposed in contact with the patterned heat sensitive structure;
and depositing the passivation layer and etching the passivation layer, the electrode layer and the column through hole etching protection layer to form a beam structure of the micro-bridge infrared detector.
Optionally, after sequentially forming an isolation dielectric layer, an electrode layer, and a passivation layer on the patterned thermosensitive structure, and forming a plurality of hollow pillar structures on the readout circuit substrate, the method further includes:
and releasing the sacrificial layer.
Compared with the prior art, the technical scheme provided by the embodiment of the disclosure has the following advantages:
the utility model provides a microbridge infrared detector, through setting up the microbridge structure including being located the sacrificial layer and keeping away from reading circuit substrate one side and the post through-hole etching protective layer that sets up with the sacrificial layer contact, the projection of the cellular structure that the hollow column structure position that corresponds in post through-hole etching protective layer formed on reading circuit substrate overlaps with the projection of the cellular structure that the sacrificial layer corresponds the formation of hollow column structure position on reading circuit substrate, can be in order to etch post through-hole etching protective layer and sacrificial layer simultaneously in order to form a plurality of post through-holes. Therefore, the roughness of the inner wall of the column through hole is effectively reduced by utilizing the column through hole etching protective layer, so that the transmission speed of the infrared detection electric signal at the hollow column structure is increased, and the uniformity of infrared detection electric signal transmission among different infrared detection pixels is optimized. In addition, the size of the upper opening of the column through hole is reduced, the sensitivity of the micro-bridge infrared detector is improved, and the size of the infrared detection pixel is reduced to realize the miniaturization of the micro-bridge infrared detector.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure.
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present disclosure, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.
Fig. 1 is a schematic perspective view of a microbridge infrared detector provided in an embodiment of the present disclosure;
fig. 2 is a schematic cross-sectional structure diagram of a microbridge infrared detector provided in an embodiment of the present disclosure;
fig. 3 is a schematic flow chart of a method for manufacturing a microbridge infrared detector according to an embodiment of the present disclosure;
fig. 4 to fig. 16 are schematic cross-sectional structures corresponding to different manufacturing steps of the microbridge infrared detector, respectively.
Detailed Description
In order that the above objects, features and advantages of the present disclosure may be more clearly understood, aspects of the present disclosure will be further described below. It should be noted that the embodiments and features of the embodiments of the present disclosure may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced in other ways than those described herein; it is to be understood that the embodiments disclosed in the specification are only a few embodiments of the present disclosure, and not all embodiments.
Fig. 1 is a schematic perspective view of a microbridge infrared detector provided in an embodiment of the present disclosure, and fig. 2 is a schematic cross-sectional view of the microbridge infrared detector provided in the embodiment of the present disclosure. With reference to fig. 1 and 2, the microbridge infrared detector includes a readout circuit substrate 1 and a plurality of hollow pillar structures 2 located on the readout circuit substrate 1, the hollow pillar structures 2 being used to support a microbridge structure 4 of the infrared detector after a sacrificial layer 3 on the readout circuit substrate 1 is released. The microbridge structure 4 comprises a column through hole etching protection layer 5 which is positioned on one side of the sacrificial layer 3, which is far away from the read-out circuit substrate 1, and is in contact with the sacrificial layer 3, and the microbridge structure 4 further comprises a thermosensitive layer 6, an isolation medium layer 7, an electrode layer 8 and a passivation layer 9 which are sequentially arranged on the column through hole etching protection layer 5.
Specifically, a readout circuit is arranged in the readout circuit substrate 1, and the readout circuit is used for collecting infrared detection electric signals and processing data. The hollow column structure 2 is located on the readout circuit substrate 1 and used for supporting the micro-bridge structure 4 of the infrared detector after the sacrificial layer 3 on the readout circuit substrate 1 is released, the micro-bridge structure 4 of the infrared detector comprises an infrared absorption plate 41 and a beam structure 42 connected with the infrared absorption plate 41, and the hollow column structure 2 is in lap joint with the beam structure 42 to further support the micro-bridge structure 4. The column through hole etching protection layer 5 also serves as a support layer, which is a film layer of the microbridge structure 4 closest to the readout circuit substrate 1, and the column through hole etching protection layer 5 also has an infrared radiation absorption effect. The heat-sensitive layer 6 is used for converting infrared temperature detection signals into infrared detection electric signals, the electrode layer 8 is used for transmitting the infrared detection electric signals converted from the heat-sensitive layer 6 to the reading circuit substrate 1 through the beam structures 42 on the left side and the right side, the two beam structures 42 respectively transmit positive and negative signals of the infrared detection electric signals, the reading circuit in the reading circuit substrate 1 realizes non-contact infrared temperature detection through analysis of the obtained infrared detection electric signals, and the passivation layer 9 is used for protecting the electrode layer 8 and the heat-sensitive layer 6 from oxidation or corrosion.
It should be noted that fig. 2 exemplarily shows the sacrificial layer 3 in the microbridge infrared detector for explaining a specific structure of the microbridge infrared detector, and in the final microbridge infrared detector, the sacrificial layer 3 is released, that is, the sacrificial layer 3 does not exist. In addition, a reflecting layer can be arranged between the reading circuit substrate 1 and the sacrificial layer 3 and used for reflecting infrared rays to an absorption plate in an infrared detector pixel and matching with a resonant cavity to realize secondary absorption of the infrared rays so as to improve the infrared absorption rate of the infrared detector pixel.
Referring to fig. 1 and 2, the projection of the hole-like structure a1 formed at the position of the post via etching protective layer 5 corresponding to the hollow post structure 2 on the readout circuit substrate 1 overlaps with the projection of the hole-like structure a2 formed at the position of the sacrificial layer 3 corresponding to the hollow post structure 2 on the readout circuit substrate 1, and the post via etching protective layer 5 and the sacrificial layer 3 are simultaneously etched to form a plurality of post vias a.
Specifically, the projection of the hole-shaped structure a1 formed at the position of the column through-hole etching protection layer 5 corresponding to the hollow column structure 2 on the readout circuit substrate 1 overlaps with the projection of the hole-shaped structure a2 formed at the position of the sacrificial layer 3 corresponding to the hollow column structure 2 on the readout circuit substrate 1, that is, the size and the position of the hole-shaped structure a1 formed at the position of the column through-hole etching protection layer 5 corresponding to the hollow column structure 2 are completely the same as the size and the position of the hole-shaped structure a2 formed at the position of the sacrificial layer 3 corresponding to the hollow column structure 2 along the direction parallel to the readout circuit substrate 1.
Simultaneously etching the column through hole etching protection layer 5 and the sacrificial layer 3 to form a plurality of column through holes a, that is, along a direction parallel to the readout circuit substrate 1, the size and the position of the hole-shaped structure a1 formed at the position where the column through hole etching protection layer 5 corresponds to the hollow column structure 2 are completely the same as the size and the position of the hole-shaped structure a2 formed at the position where the sacrificial layer 3 corresponds to the hollow column structure 2, so that the whole sacrificial layer 3 needs to be formed first, the whole column through hole etching protection layer 5 is formed on the whole sacrificial layer 3, and then the column through hole etching protection layer 5 and the sacrificial layer 3 are etched to form the column through holes a of the hollow column structure 2 at the same time corresponding to the position of the hollow column structure 2.
At present, in infrared detector's preparation in-process, generally behind the formation sacrificial layer the sculpture sacrificial layer is in order to form the poroid structure that corresponds hollow post structure position, then form the supporting layer, the material of supporting layer forms bottom and the inner wall at the poroid structure that the sacrificial layer formed simultaneously, this roughness that just leads to hollow post structure inner wall is great, still be formed with the electrode layer that is used for transmitting the infrared detection signal of telecommunication in the hollow post structure, and then lead to the resistance increase of the electrode layer of hollow post structure formation, the transmission rate of infrared detection signal of telecommunication in hollow post structure department reduces, and the infrared detection signal of telecommunication transmission between the different infrared detection picture elements is relatively poor, influence infrared detector's infrared detection performance. In addition, receive the great hollow column structure's of inner wall roughness influence, the upper shed's of the post through-hole size of formation is great, influences the area that is used for setting up infrared absorption structure in the infrared detection pixel for infrared detector's sensitivity is difficult to promote, is unfavorable for realizing infrared detector's miniaturization.
The embodiment of the present disclosure utilizes the column through hole etching protective layer 5 to realize the protection of the column through hole a of the finally formed hollow column structure 2, that is, the column through hole etching protective layer 5 is utilized to effectively reduce the roughness of the inner wall of the porous structure a2 formed at the position where the column through hole etching protective layer 5 corresponds to the hollow column structure 2 and the porous structure a1 formed at the position where the sacrificial layer 3 corresponds to the hollow column structure 2, the resistance of the electrode layer 8 formed in the hollow column structure 2 is reduced, so that the transmission speed of the infrared detection electrical signal at the position of the hollow column structure 2 is increased, and the uniformity of the column through holes between different infrared detection pixels is optimized, further, the uniformity of the infrared detection electrical signal transmission between different infrared detection pixels is optimized, and the infrared detection performance of the microbridge infrared detector is optimized.
In addition, the roughness of the inner wall of the hole-shaped structure a1 formed at the position of the column through hole etching protective layer 5 corresponding to the hollow column structure 2 and the roughness of the inner wall of the hole-shaped structure a2 formed at the position of the sacrificial layer 3 corresponding to the hollow column structure 2 are reduced, the straightness of the column through hole A is optimized, the size of an upper opening of the column through hole A is favorably reduced, a larger area is reserved for an infrared detection pixel to supply for manufacturing an infrared absorption structure, for example, the area of the patterned thermosensitive structure 13 can be increased, the sensitivity of the microbridge infrared detector is favorably improved, and the size of the infrared detection pixel is favorably reduced so as to realize the miniaturization of the microbridge infrared detector.
Alternatively, in conjunction with fig. 1 and 2, the opening size of the hole-like structure a1 formed at the position of the pillar via etching protective layer 5 corresponding to the hollow pillar structure 2 may be set to be 3 μm or less in a direction parallel to the readout circuit substrate 1. Specifically, taking the hole-like structure a1 as an example of a rectangular columnar hole-like structure, the size of the opening is the closest distance between two oppositely disposed inner wall surfaces of the hole-like structure a1 in a direction parallel to the readout circuit substrate 1; taking the hole structure a1 as an example of a cylindrical hole structure, the size of the opening is along the direction parallel to the readout circuit substrate 1, and the diameter of the circular cross section of the hole structure a1 is taken as an example.
The direction that the setting is along being on a parallel with reading circuit substrate 1, can set up the trompil size less than or equal to 3 microns of the poroid structure a1 that post through-hole etching protective layer 5 corresponds hollow column structure 2 position and forms, make through the roughness that reduces post through-hole A inner wall, the straightness accuracy of leading of post through-hole A has been optimized, be favorable to reducing post through-hole A's upper shed size, the infrared detection pixel leaves bigger area and supplies for the infrared absorption structure of preparation, for example, can increase the area of patterning heat-sensitive structure 13, be favorable to improving microbridge infrared detector's sensitivity, and be favorable to reducing the size of infrared detection pixel in order to realize microbridge infrared detector's miniaturization.
Optionally, the material forming the sacrificial layer 3 may include polyimide, the material forming the post through hole etching protection layer 5 may include one or more of silicon oxide, silicon nitride, silicon oxynitride and silicon carbide, the same mask plate may be utilized to simultaneously etch the sacrificial layer 3 and the post through hole etching protection layer 5 to form a post through hole, so as to reduce the roughness of the inner wall of the post through hole a, so that the transmission speed of the infrared detection electrical signal at the hollow post structure 2 is increased, the uniformity of the post through hole between different infrared detection pixels is optimized, the uniformity of the infrared detection electrical signal transmission between different infrared detection pixels is further optimized, and the infrared detection performance of the microbridge infrared detector is optimized.
Illustratively, the material constituting the heat sensitive layer 6 may include one or more of amorphous silicon, amorphous silicon germanium, titanium oxide, vanadium oxide, and titanium vanadium oxide, the material constituting the isolation dielectric layer 7 may include one or more of silicon oxide, silicon nitride, silicon carbide, and silicon oxynitride, the material constituting the electrode layer 8 may include one or more of titanium, titanium nitride, tantalum, and tantalum nitride, and the material constituting the passivation layer 9 may include one or more of silicon oxide, silicon nitride, silicon carbide, and silicon oxynitride.
Optionally, referring to fig. 1 and fig. 2, an isolation dielectric layer 7, a metal pillar covering layer 10, an electrode layer 8, and a passivation layer 9 are sequentially disposed in the hollow pillar structure 2. Specifically, after the column through hole is formed by etching the sacrificial layer 3 and the column through hole etching protective layer 5, and after the patterned thermosensitive structure 13 is formed, the subsequently formed isolation dielectric layer 7, the electrode layer 8 and the passivation layer 9 are sequentially formed in the column through hole, and before the electrode layer 8 is formed, the metal column covering layer 10 is formed above the isolation dielectric layer 7 in the column through hole, and the metal column covering layer 10 is a patterned structure, so that it is ensured that the metal column covering layer 10 can cover at least the inner wall and part of the bottom of the column through hole a. Illustratively, the material constituting the metal pillar covering layer 10 may include, for example, aluminum.
Optionally, with reference to fig. 1 and fig. 2, the microbridge infrared detector may further include a pillar connection disc structure 11 located between the readout circuit substrate 1 and the hollow pillar structure 2, and a protective dielectric layer 12 is further disposed on a side of the pillar connection disc structure 11 away from the readout circuit substrate 1. Illustratively, the material constituting the pillar connecting disk structures 11 may include, for example, aluminum, the material constituting the protective dielectric layer 12 may include, for example, one or more of silicon oxide, silicon nitride, silicon carbide, or silicon oxynitride, and the protective dielectric layer 12 may be capable of protecting the pillar connecting disk structures 11 from oxidation and corrosion after the sacrificial layer 3 is released.
Optionally, with reference to fig. 1 and fig. 2, the metal pillar covering layer 10 is connected to the pillar connecting disk structure 11 through a hole structure formed by the isolation dielectric layer 7 corresponding to the hollow pillar structure 2 and a hole structure formed by the protection dielectric layer 12 corresponding to the hollow pillar structure 2, and the electrode layer 8 in the hollow pillar structure 2 is disposed in contact with the metal pillar covering layer 10. Specifically, the isolation medium layer 7 is formed with a porous structure at the bottom of the hollow column structure 2, the protection medium layer 12 is also formed with a porous structure at the bottom of the hollow column structure 2, so that the metal column cover layer 10 is connected with the column connection disc structure 11 through the porous structure formed by the isolation medium layer 7 corresponding to the hollow column structure 2 and the porous structure formed by the protection medium layer 12 corresponding to the hollow column structure 2, and the electrode layer 8 in the hollow column structure 2 is arranged in contact with the metal column cover layer 10, so that an infrared detection electrical signal on the electrode layer 8 is transmitted to a reading circuit in the reading circuit substrate 1 through the metal column cover layer 10 and the corresponding column connection disc structure 11, and the reading circuit performs analysis of the infrared detection electrical signal and processing of related data.
The embodiment of the disclosure also provides a preparation method of the microbridge infrared detector, and fig. 3 is a schematic flow chart of the preparation method of the microbridge infrared detector provided by the embodiment of the disclosure. The preparation method of the microbridge infrared detector can be used for preparing the microbridge infrared detector of the embodiment. As shown in fig. 3, the preparation method of the microbridge infrared detector comprises the following steps:
s110, forming a sacrificial layer on the reading circuit substrate.
As shown in fig. 4, before forming the sacrificial layer 3 on the readout circuit substrate 1, the pillar connection pad 11 is formed on the readout circuit substrate 1, then the protective dielectric layer 12 is deposited on the pillar connection pad 11 and the protective dielectric layer 12 is etched to form the hole-like structure a3 exposing at least a portion of the pillar connection pad 11, and then the sacrificial layer 3 is formed on the protective dielectric layer 12.
And S120, sequentially forming a column through hole etching protective layer and a thermosensitive layer on the sacrificial layer.
As shown in fig. 5, a post via etching protective layer 5 is formed on the sacrificial layer 3, and then, as shown in fig. 6, a whole layer of a thermosensitive layer 6 is formed on the post via etching protective layer 5.
S130, etching the heat-sensitive layer to form a patterned heat-sensitive structure.
As shown in fig. 7, the entire layer of the thermosensitive layer 6 is etched to form the patterned thermosensitive structure 13.
And S140, simultaneously etching the column through hole etching protective layer and the sacrificial layer to form a plurality of column through holes.
As shown in fig. 8, the post via etching protection layer 5 and the sacrificial layer 3 are etched simultaneously to form a plurality of post vias a, so that the projection of the hole-shaped structure a1 formed at the position where the post via etching protection layer 5 corresponds to the hollow post structure 2 on the readout circuit substrate 1 overlaps with the projection of the hole-shaped structure a2 formed at the position where the sacrificial layer 3 corresponds to the hollow post structure 2 on the readout circuit substrate 1.
Like this, utilize post through-hole etching protective layer 5 effectively to reduce the roughness of post through-hole inner wall, reduced the resistance of the electrode layer 8 that forms in the hollow column structure 2 for the infrared detection signal of telecommunication increases at the transmission rate of hollow column structure 2 department, and has optimized the homogeneity of the post through-hole between the different infrared detection pixels, and then has optimized the homogeneity of carrying out infrared detection signal of telecommunication transmission between the different infrared detection pixels, has optimized microbridge infrared detector's infrared detection performance. In addition, the roughness of the inner wall of the column through hole is reduced, the straightness of the column through hole is optimized, the size of the upper opening of the column through hole is favorably reduced, a larger area is reserved for the infrared detection pixel to supply for manufacturing the infrared absorption structure, for example, the area of the patterned thermosensitive structure 13 can be increased, the sensitivity of the micro-bridge infrared detector is favorably improved, and the size of the infrared detection pixel is favorably reduced to realize the miniaturization of the micro-bridge infrared detector.
S150, sequentially forming an isolation dielectric layer, an electrode layer and a passivation layer on the patterned thermosensitive structure, and forming a plurality of hollow column structures on the substrate of the reading circuit.
As shown in fig. 9, the isolation dielectric layer 7 is deposited and the isolation dielectric layer 7 is etched corresponding to the pillar via a to form a hole structure a 4. As shown in fig. 10, a metal pillar capping layer 10 covering the pillar via a is formed, and in conjunction with fig. 4, 9 and 10, the metal pillar capping layer 10 is disposed in contact with the pillar connecting pad 11 through a hole structure a4 formed by the isolation dielectric layer 7 and a hole structure a3 formed by the protection dielectric layer 12. As shown in fig. 11, the isolation dielectric layer 7 is etched to expose a partial area of the patterned thermal sensitive structure 13. As shown in fig. 12, an electrode layer 8 is deposited. As shown in fig. 13, the electrode layer 8 is etched to form a patterned electrode structure 14, and the patterned electrode structure 14 is disposed in contact with the patterned heat sensitive structure 13, so that the infrared temperature detection signal on the patterned heat sensitive structure 13 is converted into an infrared detection electrical signal and then transmitted through the patterned electrode structure 14. In addition, referring to fig. 1 and 13, the electrode layer 8 is etched to form patterned electrode structures 14, such that, among different patterned electrode structures 14, at least one patterned electrode structure 14 can transmit a positive infrared detection electrical signal through one beam structure 42 in the microbridge structure 4, and at least one patterned electrode structure 14 can transmit a negative infrared detection electrical signal through another beam structure 42 in the microbridge structure 4.
As shown in fig. 14, a passivation layer 9 is deposited. As shown in fig. 15, the passivation layer 9, the electrode layer 8 and the post via etching protection layer 5 are etched to form a beam structure 42 of the micro-bridge infrared detector. With reference to fig. 1 and fig. 15, the microbridge structure 4 has a plurality of folded beam structures 42, and the beam structures 42 sequentially include a passivation layer 9, an electrode layer 8 and a column through hole etching protection layer 5 from top to bottom, the beam structures 42 are used for transmitting infrared detection electrical signals to the corresponding hollow column structures 2, and the beam structures 42 having a plurality of folded beams are beneficial to improving the mechanical strength of the microbridge infrared detector.
Alternatively, as shown in fig. 16, after sequentially forming the isolation dielectric layer 7, the electrode layer 8 and the passivation layer 9 on the patterned heat-sensitive structure 13 and forming the plurality of hollow pillar structures 2 on the readout circuitry substrate 1, a release sacrificial layer 3 is further included to form a final micro-bridge infrared detector structure.
The embodiment of the disclosure utilizes the post through hole etching protective layer to realize the protection of the post through hole of the hollow post structure which is finally formed, namely, the post through hole etching protective layer is utilized to effectively reduce the roughness of the inner wall of the post through hole, the resistance of an electrode layer formed in the hollow post structure is reduced, so that the transmission speed of an infrared detection electric signal at the position of the hollow post structure is increased, the uniformity of the post through hole between different infrared detection pixels is optimized, further, the uniformity of infrared detection electric signal transmission between different infrared detection pixels is optimized, and the infrared detection performance of the microbridge infrared detector is optimized. In addition, the roughness of the inner wall of the column through hole is reduced, the straightness of the column through hole is optimized, the size of an upper opening of the column through hole is favorably reduced, a larger area is reserved for the infrared detection pixel to be supplied for manufacturing an infrared absorption structure, for example, the area of a patterned thermosensitive structure can be increased, the sensitivity of the micro-bridge infrared detector is favorably improved, and the size of the infrared detection pixel is reduced to realize the miniaturization of the micro-bridge infrared detector.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The foregoing are merely exemplary embodiments of the present disclosure, which enable those skilled in the art to understand or practice the present disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A microbridge infrared detector, comprising:
a readout circuit substrate;
a plurality of hollow pillar structures located on the readout circuitry substrate, the hollow pillar structures for supporting a microbridge structure of the infrared detector after release of a sacrificial layer on the readout circuitry substrate;
the micro-bridge structure comprises a column through hole etching protection layer which is positioned on one side of the sacrificial layer, which is far away from the reading circuit substrate, and is in contact with the sacrificial layer, and the projection of a hole-shaped structure formed by the column through hole etching protection layer corresponding to the position of the hollow column structure on the reading circuit substrate is overlapped with the projection of a hole-shaped structure formed by the sacrificial layer corresponding to the position of the hollow column structure on the reading circuit substrate; wherein the post via etching protection layer and the sacrificial layer are etched simultaneously to form a plurality of post vias;
the micro-bridge structure further comprises a thermosensitive layer, an isolation medium layer, an electrode layer and a passivation layer which are sequentially arranged on the column through hole etching protection layer.
2. The microbridge infrared detector of claim 1, wherein the size of the opening of the hole-like structure formed by the pillar via etching protection layer corresponding to the position of the hollow pillar structure is less than or equal to 3 μm in a direction parallel to the readout circuit substrate.
3. The microbridge infrared detector of claim 1, wherein the material comprising the sacrificial layer comprises polyimide and the material comprising the post via etch protection layer comprises one or more of silicon oxide, silicon nitride, silicon oxynitride, and silicon carbide.
4. The microbridge infrared detector of claim 1, wherein the isolation dielectric layer, the metal pillar coating layer, the electrode layer and the passivation layer are sequentially disposed within the hollow pillar structure.
5. The microbridge infrared detector of claim 4, further comprising:
and a column connecting disc-shaped structure positioned between the reading circuit substrate and the hollow column structure, wherein a protective dielectric layer is further arranged on one side of the column connecting disc-shaped structure, which is far away from the reading circuit substrate.
6. The microbridge infrared detector according to claim 5, wherein the metal pillar covering layer is connected to the pillar connecting disk structure through a hole-shaped structure formed by the isolation medium layer corresponding to the hollow pillar structure and a hole-shaped structure formed by the protection medium layer corresponding to the hollow pillar structure, and the electrode layer in the hollow pillar structure is disposed in contact with the metal pillar covering layer.
7. A preparation method of a microbridge infrared detector is characterized by comprising the following steps:
forming a sacrificial layer on a readout circuit substrate;
sequentially forming a column through hole etching protective layer and a thermosensitive layer on the sacrificial layer;
etching the heat-sensitive layer to form a patterned heat-sensitive structure;
simultaneously etching the column through hole etching protection layer and the sacrificial layer to form a plurality of column through holes;
and sequentially forming an isolation dielectric layer, an electrode layer and a passivation layer on the patterned thermosensitive structure, and forming a plurality of hollow column structures on the readout circuit substrate.
8. The method for manufacturing a microbridge infrared detector according to claim 7, further comprising, before forming a sacrificial layer on the readout circuit substrate:
forming a pillar connecting disk structure on the readout circuit substrate;
and depositing a protective dielectric layer on the column connection disc-shaped structure and etching the deposited protective dielectric layer to form a hole-shaped structure exposing at least part of the column connection disc-shaped structure.
9. The method for preparing a microbridge infrared detector according to claim 8, wherein sequentially forming an isolation dielectric layer, an electrode layer and a passivation layer on the thermosensitive layer, and forming a plurality of hollow pillar structures on the readout circuit substrate comprises:
depositing the isolation medium layer and etching the isolation medium layer corresponding to the position of the column through hole to form a hole-shaped structure;
forming a metal pillar capping layer covering the pillar via; the metal column covering layer is arranged in contact with the column connecting disc-shaped structure through a hole-shaped structure formed by the isolation medium layer and a hole-shaped structure formed by the protection medium layer;
etching the isolation medium layer to expose partial area of the patterned thermosensitive structure;
depositing the electrode layer and etching to form a patterned electrode structure; wherein the patterned electrode structure is disposed in contact with the patterned heat sensitive structure;
and depositing the passivation layer and etching the passivation layer, the electrode layer and the column through hole etching protection layer to form a beam structure of the micro-bridge infrared detector.
10. The method for preparing a microbridge infrared detector according to claim 7, wherein after sequentially forming an isolation dielectric layer, an electrode layer and a passivation layer on the patterned thermosensitive structure and forming a plurality of hollow pillar structures on the readout circuitry substrate, the method further comprises:
and releasing the sacrificial layer.
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