CN112313765A - 电容器及其制备方法 - Google Patents

电容器及其制备方法 Download PDF

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Publication number
CN112313765A
CN112313765A CN201980000846.6A CN201980000846A CN112313765A CN 112313765 A CN112313765 A CN 112313765A CN 201980000846 A CN201980000846 A CN 201980000846A CN 112313765 A CN112313765 A CN 112313765A
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CN
China
Prior art keywords
layer
electrode
conductive
capacitor
support
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Pending
Application number
CN201980000846.6A
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English (en)
Inventor
陆斌
沈健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Goodix Technology Co Ltd
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Shenzhen Goodix Technology Co Ltd
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Filing date
Publication date
Application filed by Shenzhen Goodix Technology Co Ltd filed Critical Shenzhen Goodix Technology Co Ltd
Publication of CN112313765A publication Critical patent/CN112313765A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/012—Form of non-self-supporting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers

Abstract

本申请实施例提供了一种电容器及其制备方法。所述电容器包括：第一电极和第二电极，分别用于连接外部电路；至少一个支架，所述至少一个支架为柱状结构或墙状结构；叠层结构，包括至少一层电介质层和至少一层导电层；互联结构，用于将所述第一电极电连接至所述至少一个支架或所述至少一层导电层中的第一导电层，并将所述第二电极电连接至所述至少一层导电层中的第二导电层，所述第二导电层通过所述至少一层电介质层中的一层电介质层连接至与所述第一电极电连接的所述至少一个支架或所述第一导电层。本申请实施例的电容器，利用叠层结构形成电容器，能够在较小器件尺寸的情况下得到较大的电容值，从而能够提高电容器的容值密度。此外，将所述至少一个支架作为所述电容器的一个电极板，简化了电容器的结构。

Description

PCT国内申请，说明书已公开。

Claims (33)

  1. PCT国内申请，权利要求书已公开。
CN201980000846.6A 2019-05-29 2019-05-29 电容器及其制备方法 Pending CN112313765A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/089119 WO2020237543A1 (zh) 2019-05-29 2019-05-29 电容器及其制备方法

Publications (1)

Publication Number Publication Date
CN112313765A true CN112313765A (zh) 2021-02-02

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980000846.6A Pending CN112313765A (zh) 2019-05-29 2019-05-29 电容器及其制备方法

Country Status (4)

Country Link
US (1) US20210005381A1 (zh)
EP (1) EP3786991B1 (zh)
CN (1) CN112313765A (zh)
WO (1) WO2020237543A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3680934A1 (en) * 2019-01-08 2020-07-15 Murata Manufacturing Co., Ltd. Rc architectures, and methods of fabrication thereof
US11563006B2 (en) * 2020-06-24 2023-01-24 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for manufacturing thereof
US20230066352A1 (en) * 2021-08-27 2023-03-02 Taiwan Semiconductor Manufacturing Company Limited Multi-tier deep trench capacitor and methods of forming the same

Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2010045297A (ja) * 2008-08-18 2010-02-25 Tdk Corp トレンチ型コンデンサ及びその製造方法
CN103456497A (zh) * 2012-06-04 2013-12-18 旺宏电子股份有限公司 集成电路电容器及其制造方法
CN109075164A (zh) * 2016-09-20 2018-12-21 村田整合被动式解决方案公司 3维电容器结构
CN109585161A (zh) * 2017-09-29 2019-04-05 日月光半导体制造股份有限公司 电容器结构

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Publication number Priority date Publication date Assignee Title
US20090309187A1 (en) * 2005-08-24 2009-12-17 Jae-Hyoung Choi Semiconductor Device and Method of Fabricating the Same
KR20100089522A (ko) * 2009-02-04 2010-08-12 삼성전자주식회사 커패시터 및 그 제조 방법.
US9608130B2 (en) * 2011-12-27 2017-03-28 Maxim Integrated Products, Inc. Semiconductor device having trench capacitor structure integrated therein
US9978829B2 (en) * 2012-11-26 2018-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Low impedance high density deep trench capacitor
US9105759B2 (en) * 2013-11-27 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitive device and method of making the same
US9412806B2 (en) * 2014-06-13 2016-08-09 Invensas Corporation Making multilayer 3D capacitors using arrays of upstanding rods or ridges
US9755013B2 (en) * 2015-04-22 2017-09-05 Globalfoundries Inc. High density capacitor structure and method
US10134831B2 (en) * 2016-03-11 2018-11-20 International Business Machines Corporation Deformable and flexible capacitor
US11031457B2 (en) * 2017-12-15 2021-06-08 International Business Machines Corporation Low resistance high capacitance density MIM capacitor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045297A (ja) * 2008-08-18 2010-02-25 Tdk Corp トレンチ型コンデンサ及びその製造方法
CN103456497A (zh) * 2012-06-04 2013-12-18 旺宏电子股份有限公司 集成电路电容器及其制造方法
CN109075164A (zh) * 2016-09-20 2018-12-21 村田整合被动式解决方案公司 3维电容器结构
CN109585161A (zh) * 2017-09-29 2019-04-05 日月光半导体制造股份有限公司 电容器结构

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Publication number Publication date
WO2020237543A1 (zh) 2020-12-03
EP3786991A4 (en) 2021-07-07
EP3786991A1 (en) 2021-03-03
US20210005381A1 (en) 2021-01-07
EP3786991B1 (en) 2023-05-24

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Application publication date: 20210202