CN112310940A - Over-temperature protection circuit, method and system for LDO system - Google Patents
Over-temperature protection circuit, method and system for LDO system Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 49
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 35
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- 238000002347 injection Methods 0.000 claims description 26
- 239000007924 injection Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 21
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- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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Abstract
The invention discloses an over-temperature protection circuit for an LDO (low dropout regulator) system, which comprises a bias circuit, a comparator, a resistor and an over-temperature protection device, wherein the over-temperature protection device and the resistor are connected to the bias circuit in parallel, the over-temperature protection device comprises a first port connected with the bias circuit, a second port connected with the output end of the comparator, a third port used for grounding and a semiconductor device used for adjusting the potential state of the output end of the comparator, a plurality of groups of PN junctions are formed in a groove of the semiconductor device and connected with the second port, when the input voltage of the semiconductor device at the second input end of the comparator is less than or equal to the breakdown voltage between the second input end and polycrystalline silicon of the semiconductor device, the semiconductor device is turned off, and when the input voltage is greater than the breakdown voltage, the semiconductor device is turned on. The invention also provides an over-temperature protection method and system for the LDO system, so that the working reliability of the LDO system is improved, the system structure is simplified, and the production cost is reduced.
Description
Technical Field
The invention relates to the technical field of protection circuits, in particular to an over-temperature protection circuit, method and system for an LDO system.
Background
Consumer electronics have become an indispensable part of people's daily life, in which a linear regulator (LDO), a switching regulator, a driver chip, and a power management unit occupy the large wall of the river, and the LDO has unique advantages, such as small chip size, low output noise, and low cost. The current portable electronic products generally require the power management chip to have the advantages of small volume, few peripheral circuits, no ripple, no electromagnetic interference and the like. Accordingly, it can be seen that the linear converter LDO will dominate the market of future power management chips. The traditional LDO system has two current bias circuits, so that the consumption is high, the working efficiency of the LDO is reduced, a large number of devices are adopted, the integration level is low, and the production and manufacturing cost is high.
Disclosure of Invention
In view of the above, the present invention provides an over-temperature protection circuit, method and system for an LDO system, which only needs one bias circuit and has low energy consumption, and adopts a simple over-temperature protection device, so that the system has a simple structure and high reliability, and the above technical problems can be solved.
In a first aspect, the invention provides an over-temperature protection circuit for an LDO system, which includes a bias circuit, a comparator, a resistor, and an over-temperature protection device, where the comparator, the over-temperature protection device, and the resistor are connected to the bias circuit;
the comparator comprises a first input end connected with the output end of the bias circuit, a second input end used for setting reference parameters and a comparator output end connected to the over-temperature protection device;
the over-temperature protection device comprises a first port connected with the bias circuit, a second port connected with the output end of the comparator, a third port used for grounding and a semiconductor device used for adjusting the potential state of the output end of the comparator, wherein the semiconductor device comprises a substrate of a first conduction type, a first epitaxial layer of the first conduction type formed on the substrate, a groove extending from the upper surface of the first epitaxial layer to the lower surface of the substrate, first silicon oxide formed in the side wall of the groove, a second epitaxial layer of the second conduction type positioned between the first silicon oxide and at the bottom of the groove, a third epitaxial layer of the first conduction type formed on the second epitaxial layer, a first injection region of the second conduction type formed in the first epitaxial layer and positioned at two sides of the groove, and a second injection region of the first conduction type formed in the first injection region, A second silicon oxide formed on the first epitaxial layer and connected with the first silicon oxide, and a polysilicon formed on the second silicon oxide and the top of the trench, wherein the polysilicon is connected with the second injection region, and the second silicon oxide is connected with the first injection region and the second injection region;
wherein the semiconductor device is turned off when an input voltage of the semiconductor device at the second input terminal is less than or equal to a breakdown voltage between the second input terminal and the polysilicon, and is turned on when the input voltage is greater than the breakdown voltage.
As a further improvement of the above technical solution, the over-temperature protection device further includes a first metal layer formed on the lower surface of the substrate at an interval, a second metal layer connected to the bottom of the trench, a dielectric layer formed on the polysilicon and connected to the second injection region, and a third metal layer formed on the dielectric layer, the first injection region, and the second injection region, wherein the first metal layer is connected to the first port, the second metal layer is disposed corresponding to the second epitaxial layer and connected to the second port, and the third metal layer is connected to the third port.
As a further improvement of the above technical solution, the reference parameter is a reference voltage output by the LDO system, and when a voltage drop of an input current of the bias circuit is a high potential, the output end of the comparator outputs a low voltage, and the LDO system operates normally;
when the LDO system works within a preset temperature range, the output end of the comparator outputs low voltage, the over-temperature protection device is not conducted, the input current passes through the current-blocking end to the grounding end, and the voltage drop of the input current is high potential.
As a further improvement of the above technical solution, the over-temperature protection circuit for the LDO system further includes that when the operating temperature of the LDO system exceeds the preset temperature, the over-temperature protection device is turned on, the voltage drop of the input current becomes a low potential, the output end of the comparator outputs a high voltage, and the LDO system stops operating.
As a further improvement of the above technical solution, the number of the second epitaxial layers and the number of the third epitaxial layers are three, the second epitaxial layers and the third epitaxial layers are sequentially arranged in the trenches, the depth of the trenches is equal to the sum of the thicknesses of the substrate and the first epitaxial layers, the thickness of each second epitaxial layer is equal, the thickness of each third epitaxial layer is equal, and the thickness of each second epitaxial layer is greater than the thickness of each third epitaxial layer.
As a further improvement of the above technical solution, the first conductivity type is an N type, the second conductivity type is a P type, and a doping concentration of the first implantation region is less than a doping concentration of the second implantation region.
In a second aspect, the present invention further provides an over-temperature protection method for an LDO system, which is applied to the above over-temperature protection circuit for an LDO system, and includes:
acquiring the working temperature of the LDO system, and judging whether the working temperature exceeds the preset temperature for normal work of the LDO system;
if so, the output end of the comparator outputs low voltage, the over-temperature protection device is not conducted, the input current is conducted to a grounding end through the current resistance, and the voltage drop of the input current is high potential;
if not, the over-temperature protection device is conducted, the voltage drop of the input current becomes a low potential, the output end of the comparator outputs high voltage, and the LDO system stops working.
In a third aspect, the present invention further provides an over-temperature protection system for an LDO system, which is applied to the above over-temperature protection circuit for an LDO system, and includes:
the acquisition module is used for acquiring the working temperature of the LDO system;
the judging module is used for judging whether the working temperature exceeds the preset temperature for normal work of the LDO system;
the processing module is used for outputting low voltage by the output end of the comparator when the working temperature exceeds the preset temperature, the over-temperature protection device is not conducted, the input current is conducted to a grounding end through the current resistance, and the voltage drop of the input current is high potential; and when the working temperature does not exceed the preset temperature, the over-temperature protection device is switched on, the voltage drop of the input current becomes a low potential, the output end of the comparator outputs high voltage, and the LDO system stops working.
As a further improvement of the above technical solution, the semiconductor device further includes an adjusting unit, configured to change a turn-on voltage of the semiconductor device by adjusting thicknesses of a plurality of sets of PN junctions from a lower surface of the substrate corresponding to the second port to the polysilicon.
The invention provides an over-temperature protection circuit, a method and a system for an LDO system, which have the beneficial effects that: the over-temperature protection device is added into the LDO system, the comparator, the over-temperature protection device, the resistor and the bias circuit are connected, the over-temperature protection device and the resistor are connected in parallel, and when the over-temperature protection device is not conducted, the input current of the bias circuit flows to the grounding end through the resistor, so that the working safety of the LDO system is ensured. The semiconductor device is added into the over-temperature protection device, a plurality of groups of PN junctions are formed through the second epitaxial layer and the third epitaxial layer in the groove of the semiconductor device, when the input voltage of the semiconductor device at the second input end is smaller than or equal to the breakdown voltage between the second input end and the polycrystalline silicon, the semiconductor device is turned off, and when the input voltage is larger than the breakdown voltage, the semiconductor device is turned on. The starting voltage of the semiconductor device can be adjusted through the thickness and the doping concentration of the multiple groups of PN junctions, so that the safe working temperature of the LDO system is adjusted, the normal working temperature is recovered, the size of the semiconductor device is small, the integration level of an over-temperature protection device can be improved, the system structure is simplified, the working reliability of the LDO system is also improved, and the production cost is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic diagram of an over-temperature protection circuit for an LDO system according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an over-temperature protection circuit for an LDO system according to another embodiment of the present invention;
FIG. 3 is a schematic diagram of an embodiment of an over-temperature protection device according to the present invention;
FIG. 4 is a flowchart of an over-temperature protection method for an LDO system according to an embodiment of the present invention;
fig. 5 is a block diagram of an over-temperature protection system for an LDO system according to an embodiment of the present invention.
Description of the main element symbols:
100-an over-temperature protection circuit for an LDO system; 110-a bias circuit; 120-a comparator; 121-a first input; 122-a second input; 123-comparator output; 130-resistance; 140-over-temperature protection devices; 141-a first port; 142-a second port; 143-a third port; 150-a semiconductor device; 151-substrate; 152-a first epitaxial layer; 153-a trench; 154-first silicon oxide; 155-a second epitaxial layer; 156-third epitaxial layer; 157-a first implanted region; 158-a second implanted region; 159-second silica; 160-polycrystalline silicon; 161-a first metal layer; 162-a second metal layer; 163-a dielectric layer; 164-a third metal layer; 200-an over-temperature protection system for the LDO system; 210-an obtaining module; 220-a judgment module; 230-a processing module; 240-adjustment module.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Referring to fig. 1 and fig. 2, the present invention provides an over-temperature protection circuit 100 for an LDO system, including a bias circuit 110, a comparator 120, a resistor 130, and an over-temperature protection device 140, wherein the comparator 120, the over-temperature protection device 140, and the resistor 130 are connected to the bias circuit 110;
the comparator 120 comprises a first input 141 connected to the output of the bias circuit 110, a second input 142 for setting a reference parameter, and a comparator output 123 connected to the over-temperature protection device 140;
the over-temperature protection device 140 includes a first port 141 connected to the bias circuit 110, a second port 142 connected to the comparator output 123, a third port 143 for grounding, and a semiconductor device 150 for adjusting a potential state of the comparator output 123, wherein the semiconductor device 150 includes a substrate 151 of a first conductivity type, a first epitaxial layer 152 of the first conductivity type formed on the substrate 151, a trench 153 extending from an upper surface of the first epitaxial layer 152 to a lower surface of the substrate 151, a first silicon oxide 154 formed in a sidewall of the trench 153, a second epitaxial layer 155 of a second conductivity type located between the first silicon oxide 154 and at a bottom of the trench 153, a third epitaxial layer 156 of the first conductivity type formed on the second epitaxial layer 155, a first implanted region 157 of the second conductivity type formed in the first epitaxial layer 152 and located at both sides of the trench 153, a first implanted region 157 of the second conductivity type, A second implanted region 158 of the first conductivity type formed within the first implanted region 157, a second silicon oxide 159 formed on the first epitaxial layer 152 and connected to the first silicon oxide 154, and a polysilicon 160 formed on the second silicon oxide 159 and on the top of the trench 153, the polysilicon 160 being connected to the second implanted region 158, the second silicon oxide 159 being connected to the first implanted region 157 and the second implanted region 158;
wherein the semiconductor device 150 is turned off when the input voltage of the semiconductor device 150 at the second input terminal 122 is less than or equal to the breakdown voltage between the second input terminal 122 and the polysilicon 160, and the semiconductor device 150 is turned on when the input voltage is greater than the breakdown voltage. .
In this embodiment, the LDO is a low dropout linear regulator that uses a transistor or fet operating in the saturation region to subtract excess voltage from the applied input voltage to produce a regulated output voltage. Droop refers to the minimum difference between the input voltage and the output voltage required by the regulator to maintain the output voltage within 100mV above or below its nominal value. The low-voltage drop linear voltage regulator has the characteristics of low cost, low noise and small static current, needs few external elements and generally only needs one or two bypass capacitors. The LDO system mainly comprises a starting circuit, a constant current source bias unit, an enabling circuit, an adjusting element, a reference source, an error amplifier, a feedback resistor, a protection circuit and the like. The basic working principle of the LDO system is as follows: the system is powered up, if the enable pin is at a high level, the circuit starts to start, the constant current source circuit provides bias for the whole circuit, the reference source voltage is quickly established, the output continuously rises along with the input, when the output is about to reach a specified value, the output feedback voltage obtained by the feedback network is also close to the reference voltage value, at the moment, the error amplifier amplifies a small error signal between the output feedback voltage and the reference voltage and amplifies the small error signal to the output through the adjusting tube, so that negative feedback is formed, the output voltage is ensured to be stabilized on the specified value, and similarly, if the input voltage or the output current changes, the closed loop can keep the output voltage unchanged. A comparator is a circuit or device that compares two or more data items to determine whether they are equal or the relationship and arrangement order between them, and the comparator is a circuit that compares an analog voltage signal with a reference voltage, and the two inputs of the comparator are analog signals, and the output is a binary signal 0 or 1, and when the difference between the input voltages increases or decreases and the government symbol does not change, the output is kept constant. The bias circuit is used for providing proper bias current for each amplification stage, determining the static working point of each stage, wherein the requirements of each amplification stage on the bias current are different, a smaller (generally microampere) bias current is generally required to be provided, and the bias circuit is very stable so as to improve the input resistance of the integrated operational amplifier and reduce the input bias current, the input offset current and the like.
It should be noted that the comparator 120 includes a first input terminal 121 connected to the output terminal of the bias circuit 110, a second input terminal 122 for setting a reference parameter, and a comparator output terminal 123 connected to the over-temperature protection device 140, the reference parameter is a reference voltage output by the LDO system, the over-temperature protection device 140 replaces a conventional MOSFET, a transistor, and a resistor combination, only one bias circuit is needed to provide a bias current, the over-temperature protection device 140 includes a first port 141 connected to the bias circuit 110, a second port 142 connected to the comparator output terminal 123, a third port 143 connected to ground, and a semiconductor device 150 for adjusting a potential state of the comparison output terminal 123, the resistor 130 is connected in parallel with the semiconductor device 150, thereby simplifying an over-temperature protection structure of the conventional LDO system, wherein the purpose of the over-temperature protection structure mainly means to suspend the LDO system from operating when the temperature is too high, prevent LDO system from receiving the harm because of high temperature. In order to avoid the LDO from being continuously started and stopped around the turn-off temperature and causing oscillation, the over-temperature protection circuit has a hysteresis function, namely the temperature T1 at which the system stops working is higher than the temperature T2 at which the system resumes working after thermal turn-off. Now, it is assumed that when the output is "0", it indicates that the internal temperature of the system is too high, and the operation will be stopped; on the contrary, when the output is "1", it indicates that the internal temperature of the system is normal, and the system can work normally. The operation of the semiconductor device is essentially to detect the temperature inside the LDO system by using a relatively temperature sensitive device, when T is larger than or equal to T1, the semiconductor device is started, the LDO system stops working until T is reduced to T2, and the LDO system can not resume normal working so as to improve the working reliability of the LDO system.
It should be understood that the semiconductor device 150 is formed by forming a first epitaxial layer 152 on a substrate 151, wherein the first epitaxial layer 152 has the same conductivity type as the substrate 151, forming a trench 153 from the upper surface of the first epitaxial layer 152 to the lower surface of the substrate 151, depositing silicon oxide in the trench 153 and on the upper surface of the first epitaxial layer 152, removing the silicon oxide at the bottom of the trench 153 while retaining the silicon oxide on the sidewall of the trench 153 to form a first silicon oxide 154, and simultaneously removing the silicon oxide on the upper surface of the first epitaxial layer 152 corresponding to both sides of the trench 153 while retaining a portion of the silicon oxide to form a second silicon oxide 159, and then sequentially forming a second epitaxial layer 155 of the second conductivity type, a third epitaxial layer 156 of the first conductivity type in the trench 153 by using an epitaxial growth technique, wherein the second epitaxial layer 155 and the third epitaxial layer 156 are formed alternately. Preferably, the number of the second epitaxial layers 155 and the number of the third epitaxial layers 156 are three, the depth of the trench 153 is equal to the sum of the thicknesses of the substrate 151 and the first epitaxial layer 152, the thickness of each second epitaxial layer 155 is equal, the thickness of each third epitaxial layer 156 is equal, and the thickness of each second epitaxial layer 155 is greater than the thickness of each third epitaxial layer 156. By forming a first implanted region 157 and a second implanted region 158 of different conductivity types in the first epitaxial layer 152, forming a first metal layer 161 at an interval on the lower surface of the substrate 151, a second metal layer 162 connected to the bottom of the trench 153, forming polysilicon 160 on the second silicon oxide 159 and the top of the trench 153, a dielectric layer 163 on the polysilicon 160 and connected to the second implanted region 158, and a third metal layer 164 on the dielectric layer 163, the first implanted region 157, and the second implanted region 158, the first metal layer 161 is connected to the first port 141, the second metal layer 162 is disposed corresponding to the second epitaxial layer 155 and connected to the second port 142, and the third metal layer 164 is connected to the third port 143. Therefore, three branches are formed in the semiconductor device 150 and connected with different ports, each group of the second epitaxial layer 155 and the third epitaxial layer 156 forms a PN junction, the doping concentration and the thickness of the three groups of PN junctions formed in the groove 153 can determine the starting voltage of the semiconductor device 150, and the safe working temperature of the LDO system is increased, wherein the first conductivity type is N-type, the second conductivity type is P-type, and the doping concentration of the first injection region 157 is less than that of the second injection region 158, so that the working performance of the semiconductor device 150 is improved.
Optionally, the reference parameter is a reference voltage output by the LDO system, when the voltage drop of the input current of the bias circuit 110 is a high potential, the comparator output 123 outputs a low voltage, and the LDO system operates normally;
when the LDO system works within a preset temperature range, the comparator output terminal 123 outputs a low voltage, the over-temperature protection device 140 is not turned on, the input current flows to the ground terminal through the resistor 130, and the voltage drop of the input current is a high potential.
Referring to fig. 3, in the present embodiment, the reference voltage refers to a circuit capable of providing a stable output voltage when a process, a power voltage, and a temperature change, and the reference voltage is applied to circuits such as a data sensor, an intelligent sensor, and a power converter. When the voltage drop of the input current of the bias circuit 110 is high, the output end 123 of the comparator outputs low potential, and the LDO system works normally. Or, when the LDO system operates within the preset temperature range, the comparator output 123 outputs a low voltage, the over-temperature protection device 140 is turned off, the input current flows to the ground terminal through the resistor 130, and the voltage drop of the input current is a high potential. When the working temperature of the LDO system exceeds the preset temperature, the over-temperature protection device 140 is turned on, the voltage drop of the input current becomes a low potential, the output end 123 of the comparator outputs a high voltage, and the LDO system stops working.
It should be noted that, at different temperatures, the over-temperature protectors 140 have different starting voltages, and since there are multiple sets of PN junctions between the gate of the semiconductor device 150, i.e., the polysilicon 160, and the second port 142, i.e., the port B, the polysilicon 160 has a voltage only after the PN junctions are broken down, and the semiconductor device 150 is turned on. The turn-on voltage of the semiconductor device 150 is directly related to the breakdown voltage of the PN junction, which is different at different operating temperatures, and the smaller the thickness between the second epitaxial layer 155 and the third epitaxial layer 156, the lower the breakdown voltage, and the lower the safety protection temperature of the semiconductor device 150. After the system temperature (T) rises, the multiple PN junctions between the gate and the port B rise with the temperature, the carriers increase, the leakage current increases, and after the safe operating temperature (T1) is exceeded, the carriers increase greatly due to high temperature, the PN junctions break down, the device is turned on, the path is opened, the conduction voltage drop is lower than that of the current path (resistance) at normal temperature, the output of the comparator 120 (i.e., the port B) becomes a high voltage state, and the path is maintained to be turned on. After the system temperature is reduced to the safe working temperature (T1), the opening voltages of the multiple groups of PN junctions are increased, but the current path is not cut off until the opening voltages of the multiple groups of PN junctions exceed the high voltage of the port B when the system temperature (T) is reduced to the recovery working temperature (T2) lower than the safe temperature (T1) because the high voltage of the port B exists in the path. After the path is cut off, the comparator 120 outputs a low voltage, and the LDO system operates normally. The temperature of the LDO system can be changed continuously during working, the starting voltage of the over-temperature protection device 140 can be changed along with the temperature change, the starting voltage in the normal working temperature range is high, the starting voltage in a high-temperature state is low, and the working stability of the LDO system can be ensured.
Referring to fig. 4, the present invention further provides an over-temperature protection method for an LDO system, which is applied to the over-temperature protection circuit for an LDO system, and the method includes the following steps:
s1: acquiring the working temperature of the LDO system, and judging whether the working temperature exceeds the preset temperature for normal work of the LDO system;
s2: if so, the output end of the comparator outputs low voltage, the over-temperature protection device is not conducted, the input current is conducted to a grounding end through the current resistance, and the voltage drop of the input current is high potential;
s3: if not, the over-temperature protection device is conducted, the voltage drop of the input current becomes a low potential, the output end of the comparator outputs high voltage, and the LDO system stops working.
In this embodiment, the temperature of the LDO system is changed during the operation, and the general operating temperature is continuously increased, the operating temperature of the LDO system is obtained in real time, the operating temperature is compared with the preset temperature at which the LDO system normally operates, when the operating temperature is judged to exceed the preset temperature, the output end of the comparator outputs a low voltage, the over-temperature protection device is not turned on, the input current flows through the current-blocking terminal to the ground terminal, and the voltage drop of the input current is a high potential; when the working temperature is judged not to exceed the preset temperature of the LDO system, the over-temperature protection device is conducted, the voltage drop of the input current becomes a low potential, the output end of the comparator outputs high voltage, and the LDO system stops working.
Referring to fig. 5, the present invention further provides an over-temperature protection system 200 for an LDO system, which is applied to the above-mentioned over-temperature protection circuit for an LDO system, and includes:
an obtaining module 210, configured to obtain a working temperature of the LDO system;
the judging module 220 is configured to judge whether the working temperature exceeds a preset temperature at which the LDO system normally works;
the processing module 230 is configured to output a low voltage at an output end of the comparator when the operating temperature exceeds the preset temperature, the over-temperature protection device is not turned on, the input current is blocked to a ground end through the current, and a voltage drop of the input current is a high potential; and when the working temperature does not exceed the preset temperature, the over-temperature protection device is switched on, the voltage drop of the input current becomes a low potential, the output end of the comparator outputs high voltage, and the LDO system stops working.
Optionally, an adjusting unit 240 is further included, configured to change a turn-on voltage of the semiconductor device by adjusting thicknesses of the plurality of sets of PN junctions from the lower surface of the substrate corresponding to the second port to the polysilicon.
The invention provides an over-temperature protection circuit, a method and a system for an LDO system, wherein an over-temperature protection device is added in the LDO system, a comparator, the over-temperature protection device and a resistor are connected with a bias circuit, a first input end of the comparator is connected with the bias circuit, a second input end of the comparator is provided with reference parameters, an output end of the comparator is connected to the over-temperature protection device, and the over-temperature protection device comprises a first port connected with the bias circuit, a second port connected with the output end of the comparator, a third port used for grounding and a semiconductor device used for adjusting the potential state of the output end of the comparator. The over-temperature protection device is connected with the resistor in parallel, and when the over-temperature protection device is not conducted, the input current of the bias circuit flows to the grounding end through the resistor, so that the working safety of the LDO system is ensured. The semiconductor device comprises a substrate, a first epitaxial layer formed on the substrate, a groove extending from the upper surface of the first epitaxial layer to the lower surface of the substrate, first silicon oxide formed in the side wall of the groove, a second epitaxial layer located between the first silicon oxide and located at the bottom of the groove, a third epitaxial layer formed on the second epitaxial layer, a first injection region formed in the first epitaxial layer and located on two sides of the groove, a second injection region formed in the first injection region, second silicon oxide formed on the first epitaxial layer and connected with the first silicon oxide, and polysilicon formed on the second silicon oxide and the top of the groove, wherein the polysilicon is connected with the second injection region, the second silicon oxide is connected with the first injection region and the second injection region, the semiconductor device is added into the over-temperature protection device, and a plurality of groups of PN junctions are formed through the second epitaxial layer and the third epitaxial layer in the groove of the semiconductor device, the starting voltage of the semiconductor device can be adjusted through the thickness and the doping concentration of the multiple groups of PN junctions, so that the safe working temperature of the LDO system is adjusted, the normal working temperature is recovered, the size of the semiconductor device is small, the integration level of an over-temperature protection device can be improved, the system structure is simplified, the working reliability of the LDO system is also improved, and the production cost is reduced.
In all examples shown and described herein, any particular value should be construed as merely exemplary, and not as a limitation, and thus other examples of example embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
The above examples are merely illustrative of several embodiments of the present invention, and the description thereof is more specific and detailed, but not to be construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention.
Claims (9)
1. An over-temperature protection circuit for an LDO system is characterized by comprising a bias circuit, a comparator, a resistor and an over-temperature protection device, wherein the comparator, the over-temperature protection device and the resistor are connected with the bias circuit;
the comparator comprises a first input end connected with the output end of the bias circuit, a second input end used for setting reference parameters and a comparator output end connected to the over-temperature protection device;
the over-temperature protection device comprises a first port connected with the bias circuit, a second port connected with the output end of the comparator, a third port used for grounding and a semiconductor device used for adjusting the potential state of the output end of the comparator, wherein the semiconductor device comprises a substrate of a first conduction type, a first epitaxial layer of the first conduction type formed on the substrate, a groove extending from the upper surface of the first epitaxial layer to the lower surface of the substrate, first silicon oxide formed in the side wall of the groove, a second epitaxial layer of the second conduction type positioned between the first silicon oxide and at the bottom of the groove, a third epitaxial layer of the first conduction type formed on the second epitaxial layer, a first injection region of the second conduction type formed in the first epitaxial layer and positioned at two sides of the groove, and a second injection region of the first conduction type formed in the first injection region, A second silicon oxide formed on the first epitaxial layer and connected with the first silicon oxide, and a polysilicon formed on the second silicon oxide and the top of the trench, wherein the polysilicon is connected with the second injection region, and the second silicon oxide is connected with the first injection region and the second injection region;
wherein the semiconductor device is turned off when an input voltage of the semiconductor device at the second input terminal is less than or equal to a breakdown voltage between the second input terminal and the polysilicon, and is turned on when the input voltage is greater than the breakdown voltage.
2. The over-temperature protection circuit for the LDO system of claim 1, wherein the over-temperature protection device further comprises a first metal layer formed on the lower surface of the substrate at an interval, a second metal layer connected to the bottom of the trench, a dielectric layer formed on the polysilicon and connected to the second injection region, and a third metal layer formed on the dielectric layer, the first injection region and the second injection region, the first metal layer is connected to the first port, the second metal layer is disposed corresponding to the second epitaxial layer and connected to the second port, and the third metal layer is connected to the third port.
3. The over-temperature protection circuit for the LDO system as claimed in claim 1, wherein the reference parameter is a reference voltage outputted by the LDO system, when the voltage drop of the input current of the bias circuit is high, the output terminal of the comparator outputs a low voltage, and the LDO system operates normally;
when the LDO system works within a preset temperature range, the output end of the comparator outputs low voltage, the over-temperature protection device is not conducted, the input current passes through the current-blocking end to the grounding end, and the voltage drop of the input current is high potential.
4. The over-temperature protection circuit for an LDO system according to claim 3, further comprising:
when the working temperature of the LDO system exceeds the preset temperature, the over-temperature protection device is switched on, the voltage drop of the input current becomes a low potential, the output end of the comparator outputs high voltage, and the LDO system stops working.
5. The over-temperature protection circuit for the LDO system according to claim 1, wherein the number of the second epitaxial layer and the number of the third epitaxial layer are both three, and the second epitaxial layer and the third epitaxial layer are sequentially arranged in the trench, the depth of the trench is equal to the sum of the thicknesses of the substrate and the first epitaxial layer, the thickness of each of the second epitaxial layer is equal, the thickness of each of the third epitaxial layer is equal, and the thickness of each of the second epitaxial layer is greater than the thickness of each of the third epitaxial layer.
6. The over-temperature protection circuit for an LDO system of claim 1, wherein the first conductivity type is N-type, the second conductivity type is P-type, and a doping concentration of the first implanted region is less than a doping concentration of the second implanted region.
7. An over-temperature protection method for an LDO system, which is applied to the over-temperature protection circuit for the LDO system as claimed in any one of claims 1-6, and comprises:
acquiring the working temperature of the LDO system, and judging whether the working temperature exceeds the preset temperature for normal work of the LDO system;
if so, the output end of the comparator outputs low voltage, the over-temperature protection device is not conducted, the input current is conducted to a grounding end through the current resistance, and the voltage drop of the input current is high potential;
if not, the over-temperature protection device is conducted, the voltage drop of the input current becomes a low potential, the output end of the comparator outputs high voltage, and the LDO system stops working.
8. An over-temperature protection system for an LDO system, applied to the over-temperature protection circuit for the LDO system as claimed in any one of claims 1-6, comprising:
the acquisition module is used for acquiring the working temperature of the LDO system;
the judging module is used for judging whether the working temperature exceeds the preset temperature for normal work of the LDO system;
the processing module is used for outputting low voltage by the output end of the comparator when the working temperature exceeds the preset temperature, the over-temperature protection device is not conducted, the input current is conducted to a grounding end through the current resistance, and the voltage drop of the input current is high potential; and when the working temperature does not exceed the preset temperature, the over-temperature protection device is switched on, the voltage drop of the input current becomes a low potential, the output end of the comparator outputs high voltage, and the LDO system stops working.
9. The over-temperature protection system for an LDO system of claim 8, further comprising:
and the adjusting unit is used for changing the starting voltage of the semiconductor device by adjusting the thicknesses of a plurality of groups of PN junctions from the lower surface of the substrate corresponding to the second port to the polycrystalline silicon.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011263516.7A CN112310940A (en) | 2020-11-12 | 2020-11-12 | Over-temperature protection circuit, method and system for LDO system |
| CN202110844846.3A CN113381383B (en) | 2020-11-12 | 2021-07-26 | Over-temperature protection circuit, method and system for LDO system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011263516.7A CN112310940A (en) | 2020-11-12 | 2020-11-12 | Over-temperature protection circuit, method and system for LDO system |
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| CN112310940A true CN112310940A (en) | 2021-02-02 |
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| CN202011263516.7A Withdrawn CN112310940A (en) | 2020-11-12 | 2020-11-12 | Over-temperature protection circuit, method and system for LDO system |
| CN202110844846.3A Active CN113381383B (en) | 2020-11-12 | 2021-07-26 | Over-temperature protection circuit, method and system for LDO system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113990944A (en) * | 2021-09-22 | 2022-01-28 | 深圳市迪浦电子有限公司 | Protection chip for power conversion system and preparation method thereof |
| CN114024289A (en) * | 2021-11-05 | 2022-02-08 | 深圳市芸鸽科技有限公司 | Over-temperature protection circuit and method for power management |
| CN114123105A (en) * | 2021-11-19 | 2022-03-01 | 深圳市迪浦电子有限公司 | Over-temperature protection circuit and method for power management LDO system |
| CN114695557A (en) * | 2022-03-31 | 2022-07-01 | 南通万亨新能源科技有限公司 | VDMOS device for lithium battery charging management and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6310467B1 (en) * | 2001-03-22 | 2001-10-30 | National Semiconductor Corporation | LDO regulator with thermal shutdown system and method |
| CN102456726B (en) * | 2010-10-19 | 2013-07-24 | 上海华虹Nec电子有限公司 | Silicon germanium heterojunction bipolar transistor |
| CN204650334U (en) * | 2015-04-13 | 2015-09-16 | 南京中科微电子有限公司 | A kind of linear voltage regulator of ultra low quiescent power consumption |
| CN107066014B (en) * | 2017-06-29 | 2018-11-27 | 英麦科（厦门）微电子科技有限公司 | A kind of low pressure difference linear voltage regulator of super low-power consumption |
| CN108109999A (en) * | 2018-01-16 | 2018-06-01 | 上海南麟电子股份有限公司 | Thermal-shutdown circuit, semiconductor devices and preparation method thereof |
-
2020
- 2020-11-12 CN CN202011263516.7A patent/CN112310940A/en not_active Withdrawn
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2021
- 2021-07-26 CN CN202110844846.3A patent/CN113381383B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113990944A (en) * | 2021-09-22 | 2022-01-28 | 深圳市迪浦电子有限公司 | Protection chip for power conversion system and preparation method thereof |
| CN113990944B (en) * | 2021-09-22 | 2024-04-19 | 深圳市迪浦电子有限公司 | Protective chip for power supply conversion system and preparation method thereof |
| CN114024289A (en) * | 2021-11-05 | 2022-02-08 | 深圳市芸鸽科技有限公司 | Over-temperature protection circuit and method for power management |
| CN114024289B (en) * | 2021-11-05 | 2022-07-26 | 东莞市思腾电子有限公司 | Over-temperature protection circuit and method for power management |
| CN114123105A (en) * | 2021-11-19 | 2022-03-01 | 深圳市迪浦电子有限公司 | Over-temperature protection circuit and method for power management LDO system |
| CN114123105B (en) * | 2021-11-19 | 2023-07-04 | 深圳市迪浦电子有限公司 | Over-temperature protection circuit and method for power management LDO system |
| CN114695557A (en) * | 2022-03-31 | 2022-07-01 | 南通万亨新能源科技有限公司 | VDMOS device for lithium battery charging management and preparation method thereof |
| CN114695557B (en) * | 2022-03-31 | 2024-02-09 | 博研嘉信(北京)科技有限公司 | VDMOS device for lithium battery charging management and preparation method thereof |
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| Publication number | Publication date |
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| CN113381383A (en) | 2021-09-10 |
| CN113381383B (en) | 2021-11-23 |
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