CN113990944A - Protection chip for power conversion system and preparation method thereof - Google Patents
Protection chip for power conversion system and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6625—Lateral transistors
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/125—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for rectifiers
Abstract
The invention discloses a protective chip for a power conversion system, which comprises a first substrate, first injection regions formed on the first substrate at intervals, a second injection region positioned between the first injection regions, a second substrate, a third injection region formed under the second substrate, and a polyimide layer positioned between the first substrate and the second substrate, wherein the first injection region is respectively used for being connected with a current input end and a current output end of the power conversion system, the second injection region is used for being connected with an input end of a monitoring signal, the third injection region is used for being connected with an output end of the monitoring signal, when the working temperature is in a normal temperature range, the polyimide layer is not conducted, the output of the monitoring signal cannot be detected, when the working temperature exceeds the normal working temperature due to the change of electrical parameters between the current input end and the current output end, the polyimide layer is conducted, so that the current passes through a passage where the monitoring signal is positioned, to output a monitoring signal. The integration level of the power conversion system is improved, the working reliability is also improved, and the manufacturing cost is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing processes, in particular to a protection chip for a power conversion system and a preparation method thereof.
Background
Modern switching power supplies have two types: the ACDC converter converts alternating current (220V) alternating current (ac) power into direct current (dc) power with low voltage meeting requirements, and is used for load products, such as power supply parts of televisions and displays. Because the voltage-resisting capability of the semiconductor devices is different, even the chips are damaged, the main purpose of the switching power supply chip is to provide a stable output voltage to supply power to the load, and at the moment, the overhigh output voltage completely deviates from the design purpose of the switching power supply. Aiming at the two overvoltage conditions, the two protection circuits are added to the chip, so that the chip can be controlled under the condition that the input or output voltage of the chip is abnormal, and the protection effect is achieved.
The electronic products are various in variety, and the applications of the power supply chip are different in different fields and under different conditions. The protection circuits added to different switching power supply chips are not completely the same, and the protection circuits are not applied to all the chips, and the protection circuits added to the chips are determined according to specific requirements. In order to achieve the safety performance of the switching power supply, the situation that several protection circuits are added to the same chip often exists, and the addition of the protection circuits also has a certain influence on the stability of the system. Therefore, in designing, importance must be attached to the relevance between various protection circuits. This requires that the protection circuit have strict logic, mature circuit as much as possible, and the number of components as few as possible, and requires that the designer be very familiar with the system architecture of the designed switching power supply, and design the protection circuit in combination with the overall circuit requirements to ensure that a safer and more reliable power protection chip is designed.
Disclosure of Invention
In view of the above, the present invention provides a protection chip for an ACDC power conversion system, which is used for overvoltage, overcurrent, high temperature and high frequency of the ACDC power conversion system, and a preparation method thereof, wherein a protection device adopts a lateral PNP structure as a working current path, a test current is connected to a safety switch of the AC-DC conversion system, and a current path of the conversion system is cut off after the current is increased, so as to achieve a safety protection effect, thereby solving the above-mentioned technical problems.
In a first aspect, the present invention provides a protection chip for a power conversion system, including:
a first substrate of a first conductivity type;
the first substrate comprises first injection regions of the second conductivity type formed on the upper surface of the first substrate at intervals, and second injection regions of the first conductivity type positioned between the first injection regions;
a second substrate of the first conductivity type;
a third injection region of the second conductivity type formed on the lower surface of the second substrate;
the first injection region is used for being connected with a current input end and a current output end of a power supply conversion system respectively, the second injection region is used for being connected with an input end of a monitoring signal, and the third injection region is used for being connected with an output end of the monitoring signal;
when the working temperature of the power supply conversion system is within a normal temperature range, the polyimide layer is not conducted, and no monitoring signal is output; when the working temperature of the power supply conversion system exceeds the normal working temperature due to the change of the electrical parameters between the current input end and the current output end, the polyimide layer is conducted to enable the current of the path where the monitoring signal is located to pass through so as to output the monitoring signal.
As a further improvement of the above technical solution, the first conductivity type is an N type, the second conductivity type is a P type, and the doping concentrations of the first implantation region and the second implantation region are less than the doping concentration of the first substrate.
As a further improvement of the above technical solution, the first substrate and the second substrate are symmetrical with respect to the polyimide layer, and a doping concentration of the third implantation region is greater than a doping concentration of the second implantation region.
In a second aspect, the present invention further provides a method for preparing a protection chip for a power conversion system, including the following specific steps:
providing a substrate of a first conduction type, forming first injection regions of a second conduction type at intervals on the upper surface of the substrate, and forming second injection regions of the first conduction type between the first injection regions;
forming a third injection region of the second conductive type on the lower surface of the substrate;
and dividing the substrate into a first substrate and a second substrate, coating polyimide on the lower surface of the first substrate and the upper surface of the second substrate, and curing to form a polyimide layer, thereby obtaining the protective chip for the power conversion system.
As a further improvement of the above technical solution, the ion implantation dose of the first implantation region and the second implantation region is 1E13-1E15, and the doping concentration of the first implantation region and the second implantation region is less than the doping concentration of the first substrate.
As a further improvement of the above technical solution, the ion implantation dose of the third implantation region is 1E15-1E 16.
As a further improvement of the above technical solution, the thickness of the substrate is greater than 2000 μm, and the first substrate and the second substrate are obtained by mechanical cutting, and the thickness of the first substrate and the thickness of the second substrate are 500-700 μm.
As a further improvement of the above technical solution, a liquid polyimide is applied, the thickness of the polyimide layer exceeds 2 μm, and the polyimide layer is applied by a glue applying apparatus and then cured at a high temperature, so that the first substrate and the second substrate are connected.
As a further improvement of the above technical solution, the first conductivity type is an N type, the second conductivity type is a P type, the first injection region is respectively used for accessing a current input end and a current output end of the power conversion system, the second injection region is used for connecting an input end of a monitoring signal, and the third injection region is used for connecting an output end of the monitoring signal;
when the working temperature of the power supply conversion system is within a normal temperature range, the polyimide layer is not conducted, and no monitoring signal output can be detected; when the working temperature of the power supply conversion system exceeds the normal working temperature due to the change of the electrical parameters between the current input end and the current output end, the polyimide layer is conducted to enable the current of the path where the monitoring signal is located to pass through so as to output the monitoring signal.
Compared with the prior art, the protection chip for the power supply conversion system and the preparation method thereof provided by the invention have the following beneficial effects:
by forming first injection regions arranged at intervals on a first substrate and a second injection region located between the first injection regions, the first injection regions are different from the conductivity type of the substrate, the second injection regions are different from the conductivity type of the first substrate, the first injection regions and the second injection regions form a PNP structure as an operating current path, and the current is heated through a PN junction so that the heat is increased along with the increase of the current. The PNP structure bidirectional symmetry can be applied to a high-frequency ACDC system. The first substrate and the second substrate are obtained by being divided from the same substrate, liquid polyimide is coated between the first substrate and the second substrate to form a polyimide layer, the second injection region and the third injection region are different in conduction type and are respectively connected with monitoring signals, the monitoring signals comprise overvoltage, overcurrent and overtemperature monitoring of a power supply conversion system, namely, two transverse first injection regions are connected into working current of the power supply conversion system, the second injection region and the third injection region in the vertical direction are used as input and output of the monitoring signals, when a device is in a normal working temperature range, the polyimide layer is not conductive, and output of the monitoring signals cannot be detected. When the voltage of the power supply conversion system is too high, the current is too large or the alternating current frequency changes greatly, the working temperature rises, the polyimide layer can change in structure and the resistance of the polyimide layer is reduced, the monitoring signal passes through the monitoring signal path, the monitoring signal is detected to be output, the monitoring current is connected into the safety switch of the ACDC conversion system, the current path of the conversion system is cut off after the current is increased, and the effect of safety protection is achieved. The power conversion system adopts a simple semiconductor device structure to realize safety protection of overvoltage, overcurrent and overtemperature, integrates the overtemperature, overcurrent and overvoltage protection functions on one device, improves the integration level of the power conversion system, also improves the working reliability of the power conversion system and reduces the manufacturing cost.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a flowchart of a method for manufacturing a protection chip for a power conversion system according to an embodiment of the present invention;
fig. 2 to fig. 5 are diagrams illustrating a manufacturing process of a protection chip for a power conversion system according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a power conversion system according to an embodiment of the present invention.
The main element symbols are as follows:
10-a first substrate; 11-a first implanted region; 12-a second implanted region; 20-a second substrate; 21-a third implanted region; 22-polyimide layer.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Referring to fig. 1, 2 to 5, the present invention further provides a method for manufacturing a protection chip for a power conversion system, including the following steps:
s1: providing a substrate of a first conduction type, forming first injection regions 11 of a second conduction type arranged at intervals on the upper surface of the substrate, and forming second injection regions 12 of the first conduction type between the first injection regions 11;
s2: forming a third implanted region 21 of the second conductivity type on the lower surface of the substrate;
s3: the substrate is divided into a first substrate 10 and a second substrate 20, polyimide is coated on the lower surface of the first substrate 10 and the upper surface of the second substrate 20, and is solidified to form a polyimide layer 22, so that the protection chip for the power conversion system is obtained.
In this embodiment, the first conductivity type is N-type, the second conductivity type is P-type, the ion implantation doses of the first implantation region 11 and the second implantation region 12 are 1E13-1E15, the doping concentrations of the first implantation region 11 and the second implantation region 12 are less than the doping concentration of the first substrate 10, the ion implantation dose of the third implantation region 21 is 1E15-1E16, the thickness of the substrate is greater than 2000 μm, the first substrate 10 and the second substrate 20 are obtained by mechanical cutting, and the thicknesses of the first substrate 10 and the second substrate 20 are 500-700 μm. The first substrate 10 and the first injection region 11 have different conductivity types to form a PN junction, the second injection region 12 is positioned between the first injection regions 11, and the first injection region 11 and the second injection region 12 have different conductivity types to form a PN junction. The third injection region 21 and the second substrate 20 have different conductivity types to form a PN junction, and the high doping concentration enables the breakdown voltage to be low, thereby preventing current overcharge or accidental leakage current interference and improving the working stability of the power conversion system.
It should be noted that, the first substrate 10 and the second substrate 20 are obtained by dividing the substrate into two by mechanical cutting, but two thin substrates, i.e. front and back structures, may also be used in the actual production process. Polyimide is flowing liquid before no high temperature curing, is similar to photoresist, and after coating is carried out by using conventional gluing equipment, two substrates are adhered together, the back surface structure is simple, accurate alignment is not needed, then conventional high temperature curing is carried out, polyimide can be changed into a solid similar to plastic, and the two substrates are connected.
It should be understood that, when the protection chip for the power conversion system works, the first injection region 11 is transversely connected to an ACDC system, i.e., a current input end and an output end of a device are connected, and input and output of monitoring signals are connected in the vertical direction, and the monitoring signals include safety protection parameters of overvoltage, overcurrent and overtemperature. In a normal working range, the polyimide is not conductive, and the condition of overvoltage, overcurrent or overtemperature, namely the input end and the output end are not conducted, can not be detected when the signal output is not detected. When the voltage is too high, the current is too large or the change of the reserved frequency is large, the working temperature of the device is increased, the polyimide can generate structural change, the resistance of the polyimide is reduced, the current passes through a monitoring signal path, and the output of a monitoring signal can be detected. The cured polyimide is a solid with compact insulation at the temperature of below 200 ℃, the temperature is too high, cavities appear in the material, organic matters are carbonized at high temperature, the insulation property is reduced to form a conductor, and the resistivity of the polyimide is generally reduced at high temperature. By forming the polyimide layer 22 between the first substrate 10 and the second substrate 20, whether the second injection region 12 and the third injection region 21 are conducted or not can be judged according to parameters such as voltage, current and the like, so that the voltage, the current and the like in the power conversion system can be accurately monitored in real time and corresponding protection can be provided, and the working reliability of the power conversion system is improved to a certain extent.
Referring again to fig. 5, the present invention provides a protection chip for a power conversion system, including:
a first substrate 10 of a first conductivity type;
a second substrate 20 of the first conductivity type;
a third implanted region 21 of the second conductivity type formed on the lower surface of the second substrate 20;
a polyimide layer 22 located between the lower surface of the first substrate 10 and the upper surface of the second substrate 20, wherein the first injection region 11 is used for accessing a current input end and a current output end of a power conversion system, the second injection region 12 is used for connecting an input end of a monitoring signal, and the third injection region 21 is used for connecting an output end of the monitoring signal;
when the working temperature of the power conversion system is within the normal temperature range, the polyimide layer 22 is not conducted, and no monitoring signal is output; when the working temperature of the power conversion system exceeds the normal working temperature due to the change of the electrical parameter between the current input end and the current output end, the polyimide layer 22 is conducted to allow the current to pass through the path where the monitoring signal is located, so as to output the monitoring signal.
In this embodiment, the first conductive type is an N-type, the second conductive type is a P-type, the doping concentrations of the first implanted region, 1 and the second implanted region 12 are less than the doping concentration of the first substrate 10, the first substrate 10 and the second substrate 20 are symmetric with respect to the polyimide layer 22, and the doping concentration of the third implanted region 21 is greater than the doping concentration of the second implanted region 12. Coating polyimide by liquid state, wherein the thickness of the polyimide layer 22 exceeds 2 μm, coating by using a gluing device, and then curing at high temperature to complete the connection of the first substrate 10 and the second substrate 20. The first injection region 11 is respectively used for accessing a current input end and a current output end of a power conversion system, the second injection region 12 is used for connecting an input end of a monitoring signal, and the third injection region 21 is used for connecting an output end of the monitoring signal; when the working temperature of the power conversion system is within the normal temperature range, the polyimide layer 22 is not conducted, and no monitoring signal is output; when the working temperature of the power conversion system exceeds the normal working temperature due to the change of the electrical parameter between the current input end and the current output end, the polyimide layer 22 is conducted to allow the current to pass through the path where the monitoring signal is located, so as to output the monitoring signal.
In order to operate an electronic product safely and effectively and with a service life as long as possible, the design of the protection circuit needs to be considered, and safety and reliability should be the first indicators for evaluating the quality of the switching power supply. The probability of damage to the switching power supply during normal operation is very small, and the damage generally occurs in severe environments and emergency situations. When the ACDC system is in some abnormal state or the environment changes suddenly, the protection circuit can reduce the loss caused by the problems as much as possible. When the conversion system is designed, a protection circuit needs to be designed to ensure that the system can work safely and reliably under special conditions. Common protection circuits are: the ACDC conversion system comprises undervoltage protection, over-temperature protection, overcurrent protection, short-circuit protection, a soft start circuit and the like, wherein the most important protection functions of the ACDC conversion system are over-temperature protection, overvoltage protection and overcurrent protection.
Further, the over-temperature protection circuit: for a semiconductor device, excessive temperature may have some effect on its physical properties. The chip temperature is too high due to reasons such as too large current, poor heat dissipation and the like in the chip, and the over-temperature protection circuit generates a control signal when the temperature is higher than a certain value, so that the chip is turned off to prevent the chip from working abnormally. The overvoltage protection circuit can be divided into an input overvoltage protection circuit and an output overvoltage protection circuit, and the two protection circuits respectively work under the conditions that the input power supply voltage is too high and the output voltage is too high. The excessive input power supply voltage can cause abnormal operation of circuits inside the chip and increase power consumption, and the semiconductor devices have different voltage endurance capabilities, and even can cause damage to the chip. For the two overvoltage conditions, the two protection circuits are added to the chip, so that the chip can be controlled under the condition that the input or output voltage of the chip is abnormal, and the protection effect is achieved. The overcurrent protection circuit: when a power supply is in failure, a load is in short circuit, and the like, the current is overlarge, and when the current exceeds a certain current value, the current or the load is possibly burnt out, and even a fire hazard and the like are caused. The over-current protection circuit generates a control signal when the load current is overlarge, adjusts the output state and prevents the uncontrollable condition caused by overlarge current.
Referring to fig. 6, it should be understood that the protection chip for the power conversion system in the present invention may be an overvoltage, overcurrent, high temperature, high frequency protection chip for the ACDC power conversion system, the protection device uses a lateral PNP structure as a working current path, the current will heat through the PN junction, the heat increases with the increase of the current and with the increase of the voltage, the PNP structure is bilaterally symmetric, and may be used in the high frequency ACDC system. When the monitoring current flows in the vertical direction, and the temperature, the voltage and the current do not exceed the safety range, the polyimide resin resistance of the vertical structure is very large, and the monitoring current is very small. After the temperature, the voltage and the current are increased to exceed the safety range, the temperature of the polyimide is increased, the resistance value of the polyimide is reduced along with the temperature increase, the monitoring current is increased along with the temperature increase, the monitoring current is connected to a safety switch of the ACDC conversion system, and a current path of the conversion system is cut off after the current is increased, so that the safety protection effect is achieved. The power supply conversion system adopts a simple semiconductor device structure to realize safety protection of overvoltage, overcurrent and overtemperature, and integrates overtemperature, overcurrent and overvoltage protection functions into one device, so that the integration level of the ACDC system is improved, the reliability is improved, and the manufacturing cost is reduced.
The invention provides a protective chip for a power conversion system and a preparation method thereof.A first injection region 11 and a second injection region 12 positioned between the first injection regions 11 are formed on a first substrate 10 at intervals, the first injection region 11 is different from the first substrate 10 in conductivity type, the second injection region 12 is different from the first substrate 10 in conductivity type, the first injection region 11 and the second injection region 12 form a PNP structure as a working current path, and the current heats through a PN junction so that the heat increases along with the increase of the current. The PNP structure bidirectional symmetry can be applied to a high-frequency ACDC system. The first substrate 10 and the second substrate 20 are obtained by being divided from the same substrate, liquid polyimide is coated between the first substrate 10 and the second substrate 20 to form a polyimide layer 22, the second injection region 12 and the third injection region 21 are different in conductivity type and are respectively connected with monitoring signals, the monitoring signals comprise overvoltage, overcurrent and overtemperature monitoring of a power supply conversion system, namely, two transverse first injection regions 11 are connected with working current of the power supply conversion system, the second injection region 12 and the third injection region 21 in the vertical direction are used as input and output of the monitoring signals, and when a device is in a normal working temperature range, the polyimide layer is not conductive, and output of the monitoring signals cannot be detected. When the voltage of the power supply conversion system is too high, the current is too large or the alternating current frequency changes greatly, the working temperature rises, the polyimide layer can change in structure and the resistance of the polyimide layer is reduced, the monitoring signal passes through the monitoring signal path, the monitoring signal is detected to be output, the monitoring current is connected into the safety switch of the ACDC conversion system, the current path of the conversion system is cut off after the current is increased, and the effect of safety protection is achieved. The power conversion system adopts a simple semiconductor device structure to realize safety protection of overvoltage, overcurrent and overtemperature, integrates the overtemperature, overcurrent and overvoltage protection functions on one device, improves the integration level of the power conversion system, also improves the working reliability of the power conversion system and reduces the manufacturing cost.
In all examples shown and described herein, any particular value should be construed as merely exemplary, and not as a limitation, and thus other examples of example embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
The above examples are merely illustrative of several embodiments of the present invention, and the description thereof is more specific and detailed, but not to be construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention.
Claims (9)
1. A protection chip for a power conversion system, comprising:
a first substrate of a first conductivity type;
the first substrate comprises first injection regions of the second conductivity type formed on the upper surface of the first substrate at intervals, and second injection regions of the first conductivity type positioned between the first injection regions;
a second substrate of the first conductivity type;
a third injection region of the second conductivity type formed on the lower surface of the second substrate;
the first injection region is used for being connected with a current input end and a current output end of a power supply conversion system respectively, the second injection region is used for being connected with an input end of a monitoring signal, and the third injection region is used for being connected with an output end of the monitoring signal;
when the working temperature of the power supply conversion system is within a normal temperature range, the polyimide layer is not conducted, and no monitoring signal is output; when the working temperature of the power supply conversion system exceeds the normal working temperature due to the change of the electrical parameters between the current input end and the current output end, the polyimide layer is conducted to enable the current of the path where the monitoring signal is located to pass through so as to output the monitoring signal.
2. The guard chip for a power conversion system according to claim 1, wherein the first conductivity type is N-type, the second conductivity type is P-type, and the doping concentration of the first implanted region and the doping concentration of the second implanted region are less than the doping concentration of the first substrate.
3. The guard chip for a power conversion system of claim 1, wherein the first substrate and the second substrate are symmetric about the polyimide layer, and the third implant region has a doping concentration greater than the second implant region.
4. A method for manufacturing a power conversion system of a protection chip for a power conversion system according to any one of claims 1 to 3, comprising the steps of:
providing a substrate of a first conduction type, forming first injection regions of a second conduction type at intervals on the upper surface of the substrate, and forming second injection regions of the first conduction type between the first injection regions;
forming a third injection region of the second conductive type on the lower surface of the substrate;
and dividing the substrate into a first substrate and a second substrate, coating polyimide on the lower surface of the first substrate and the upper surface of the second substrate, and curing to form a polyimide layer, thereby obtaining the protective chip for the power conversion system.
5. The method as claimed in claim 4, wherein the ion implantation doses of the first and second implantation regions are 1E13-1E15, and the doping concentrations of the first and second implantation regions are less than that of the first substrate.
6. The method as claimed in claim 4, wherein the third implantation region has an ion implantation dose of 1E15-1E 16.
7. The method as claimed in claim 4, wherein the thickness of the substrate is greater than 2000 μm, and the first substrate and the second substrate are obtained by mechanical cutting, and the thickness of the first substrate and the second substrate is 500 μm and 700 μm.
8. The method of claim 4, wherein the polyimide layer is coated in a liquid state, the thickness of the polyimide layer exceeds 2 μm, and the first substrate and the second substrate are bonded by high temperature curing after coating with a glue coating device.
9. The method according to claim 4, wherein the first conductivity type is N-type, the second conductivity type is P-type, the first injection region is used for accessing a current input end and a current output end of the power conversion system, the second injection region is used for connecting an input end of a monitoring signal, and the third injection region is used for connecting an output end of the monitoring signal;
when the working temperature of the power supply conversion system is within a normal temperature range, the polyimide layer is not conducted, and no monitoring signal output can be detected; when the working temperature of the power supply conversion system exceeds the normal working temperature due to the change of the electrical parameters between the current input end and the current output end, the polyimide layer is conducted to enable the current of the path where the monitoring signal is located to pass through so as to output the monitoring signal.
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