JP2009130273A - Glass substrate and method for manufacturing electromagnetic wave detection apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a glass substrate equipped with a protection circuit which avoids the occurrence of destruction of TFT and the variation of operating voltage, even if a large electrostatic charge arises, and when cut, securely prevents the generation of leak current etc. <P>SOLUTION: A glass substrate 1 used for an electromagnetic wave detection apparatus 40 includes: a plurality of scanning lines 3 and a plurality of signal lines 4 which intersect mutually on one plane 2a; photoelectric converting elements 5 provided in respective regions R divided by the scanning lines 3 and the signal lines 4; thin film transistors 6 to which the signal wires 4, the scanning lines 3, drain electrodes 62, and gate electrodes 63, provided in the regions R, respectively, are connected; input output terminals 8 respectively formed on the plurality of scanning lines 3 and the plurality of signal wires 4, being outside of a detecting portions D constituted of the regions R in which the photoelectric converting elements 5 are formed; conductor wires 9 respectively led out in the further outside of each input output terminal 8a; and a protecting circuit 11 constituted of common wires 10 which respectively interconnect the conductor wires 9 in the outside of input output terminals 8. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a glass substrate and an electromagnetic wave detection device, and more particularly, to a glass substrate for an electromagnetic wave detection device provided with a protection circuit and a method for manufacturing an electromagnetic wave detection device using the glass substrate.

  A so-called direct type electromagnetic wave detection device that generates electric charge by a photoelectric conversion element by an irradiated electromagnetic wave such as X-rays and converts it into an electric signal, or the irradiated electromagnetic wave is converted into an electromagnetic wave of other wavelengths such as visible light by a scintillator or the like. Various types of so-called indirect electromagnetic wave detectors (also referred to as FPD (Flat Panel Detector)) have been developed in which after conversion, electric charges are generated by the converted electromagnetic waves in the photoelectric conversion elements and converted into electric signals.

  In these electromagnetic wave detection devices, normally, a plurality of scanning lines and a plurality of signal lines are arranged on a glass substrate so as to intersect with each other, and each region on the glass substrate partitioned by the scanning lines and signal lines is photoelectrically arranged. A conversion element is provided, and an electric signal accumulated in each photoelectric conversion element by irradiation of electromagnetic waves is taken out via a signal line, whereby an electric signal of each photoelectric conversion element, that is, each pixel is read out.

  When manufacturing such an electromagnetic wave detection device, the detection unit on the glass substrate in which each photoelectric conversion element is arranged in a matrix has a relatively large area such as the above-described scintillator or a base for storing the glass substrate. When the members approach or come into contact with each other, static electricity may be generated between them and the glass substrate.

  In recent years, there are many cases where static elimination devices are deployed in the manufacturing process of electromagnetic wave detection devices, and the devices are manufactured in an environment where static electricity is eliminated by these devices, but the static electricity generated is high A thin film transistor (hereinafter abbreviated as TFT), which is a switching element for reading a signal from each photoelectric conversion element through a signal line or a scanning line on a glass substrate when high-voltage static electricity is transmitted to the scanning line or the signal line. )) And a high voltage may be applied to the drain or gate.

  When a high voltage due to static electricity is applied to the TFT, the insulating film between the drain and the gate cannot withstand strong electric field strength, and the operating voltage of the TFT may fluctuate due to electrons flowing into the insulating film. In extreme cases, a phenomenon may occur in which the insulating film of the TFT is physically destroyed. Then, there may be a case where such fluctuation or destruction of the operating voltage occurs in all TFTs of one line connected to the scanning line or signal line on which static electricity is applied.

  In order to avoid such a situation, in the electromagnetic wave detector described in Patent Document 1, the input terminal and the output terminal provided at the end of the scanning line and the signal line on the substrate and each terminal are the most. It has been proposed to provide a protection circuit for connecting the scanning lines and the signal lines in a region between the nearby scanning lines and the signal lines.

The protection circuit prevents the charge from concentrating on the specific wiring by distributing the charge between multiple scan lines or signal lines when a large charge is generated in the specific wiring due to static electricity or the like. This is to prevent a large potential difference between the signal line and the signal line, but it basically short-circuits the scan lines and the signal lines. This causes inconveniences such as Therefore, for example, it is cut by laser irradiation after mounting a scintillator or the like.
JP 2004-31593 A

  However, when a protection circuit is provided between hundreds or thousands of scanning lines or signal lines on a glass substrate as in the electromagnetic wave detector described in Patent Document 1, one of the electromagnetic wave detectors is one. Hundreds or thousands of protection circuits are provided for each substrate, and it is very difficult to cut off each of these protection circuits by laser irradiation while preventing the scanning lines and signal lines from being cut. This is a time-consuming operation and the cutting process is a time-consuming process.

  In addition, if the protection circuit on the glass substrate is not completely cut by laser irradiation, as described above, the scanning lines and the signal lines are short-circuited, which causes noise in the completed electromagnetic wave detector. Even if short-circuiting disappears due to irradiation, a slight leak may occur in the current flowing through the scanning lines and signal lines. In such a glass substrate, the degree of leakage current can vary from scanning line to scanning line or signal line depending on the degree of variation in the laser cut finish, so that the detection accuracy of an electromagnetic wave detector using this may be reduced. Remains.

  The present invention has been made in view of the above-described problems. Even when large charges such as static electricity occur, it is possible to avoid the breakdown of the TFT and the fluctuation of the operating voltage. It is an object of the present invention to provide a glass substrate for an electromagnetic wave detection device provided with a protection circuit capable of reliably preventing the generation and a method for manufacturing an electromagnetic wave detection device using the same.

In order to solve the above problem, the glass substrate of the present invention is:
A glass substrate used in an electromagnetic wave detection device,
On one side,
A plurality of scanning lines and a plurality of signal lines arranged to cross each other;
A photoelectric conversion element that is provided in each region on the surface partitioned by the plurality of scanning lines and the plurality of signal lines, and generates electric charges by irradiation of electromagnetic waves;
A thin film transistor provided in each of the regions, wherein one electrode of the photoelectric conversion element, a signal line, and a scanning line are respectively connected to a source electrode, a drain electrode, and a gate electrode;
Input / output terminals formed on the plurality of scanning lines and the plurality of signal lines, respectively, outside the detection unit composed of each region where the photoelectric conversion element is formed,
A protection circuit comprising a conductive wire extending to the outside of each of the input / output terminals, and a common wire for connecting the conductive wires to the outside of the input / output terminals, respectively.
It is characterized by providing.

The manufacturing method of the electromagnetic wave detection device of the present invention,
A method of manufacturing an electromagnetic wave detection device using the glass substrate,
It has the cutting process which cuts off the said protection circuit formed outside the said input / output terminal of the said glass substrate with the board | substrate outside the said input / output terminal.

  According to the method of manufacturing a glass substrate and an electromagnetic wave detection device of the system as in the present invention, since a protection circuit composed of a conducting wire or a common wire connected to a scanning line or a signal line of the glass substrate is provided, the scanning line is caused by static electricity or the like. Even if the signal line is charged, it is possible to effectively avoid fluctuations in the operating voltage and physical breakdown of the thin film transistor.

  In addition, since the protection circuit is provided outside the input / output terminals provided outside the detection part of the glass substrate, the protection circuit is cut and removed from the glass substrate when the possibility of generating large static electricity is reduced. Is done. When the protection circuit is cut and removed, each conductor is surely cut, so that the short circuit between the conductors is reliably removed and the occurrence of a leakage current between the conductors can be reliably prevented.

  Hereinafter, embodiments of a method for manufacturing a glass substrate and an electromagnetic wave detection device according to the present invention will be described with reference to the drawings.

[Glass substrate]
First, the glass substrate according to the present embodiment will be described. The glass substrate is used for manufacturing an electromagnetic wave detection device (FPD). As shown in FIG. 1, a plurality of scanning lines 3 and a plurality of scanning lines 3 are provided on one surface 2 a of the insulating substrate 2 of the glass substrate 1. The signal lines 4 are arranged so as to cross each other. In the present embodiment, they are particularly arranged so as to be orthogonal to each other.

  Each of the small regions R partitioned by the plurality of scanning lines 3 and the plurality of signal lines 4 on the surface 2a of the insulating substrate 2 of the glass substrate 1 absorbs light energy and receives electron-hole pairs when irradiated with electromagnetic waves. 1 are respectively provided, and photoelectric conversion elements 5 that convert light energy into charges are provided, and the detection unit D is formed in the entire region R in which the photoelectric conversion elements 5 are provided, that is, in the region indicated by the one-dot chain line in FIG. Has been.

  When each photoelectric conversion element 5 is irradiated with electromagnetic waves, it absorbs light energy and generates electron-hole pairs to convert the light energy into electric charges. As shown in the enlarged view of FIG. 2, in each region R, one electrode of the photoelectric conversion element 5, the signal line 4, and the scanning line 3 are respectively a source electrode 61, a drain electrode 62, and a gate electrode 63. TFTs (thin film transistors) 6 connected to each of the two are provided.

  Here, the structure of the photoelectric conversion element 5 and the TFT 6 in this embodiment will be briefly described with reference to an enlarged sectional view shown in FIG. 3 is a cross-sectional view taken along line AA in FIG.

First, the TFT 6 portion will be described. On the surface 2a of the insulating substrate 2 made of glass, the gate electrode 63 made of Al, Cr, or the like of the TFT 6 serving as a switch element is integrated with the scanning line 3 not shown in FIG. A gate insulating layer 64 made of silicon nitride (SiN _x ) or the like is stacked on the gate electrode 63 and the surface 2 a of the insulating substrate 2.

A semiconductor layer 65 made of hydrogenated amorphous silicon (a-Si) or the like is stacked above the gate electrode 63 on the gate insulating layer 64, and a first of a photoelectric conversion element 5 to be described later is stacked above the semiconductor layer 65. A source electrode 61 connected to the electrode layer 54 and a drain electrode 62 formed integrally with the signal line 4 are stacked in a state of being divided by a first passivation layer 67 made of silicon nitride (SiN _x ) or the like. ing. Further, between the semiconductor layer 65 and the source electrode 61 and the drain electrode 62, ohmic contact layers 66a and 66b each formed in an n-type by doping a hydrogenated amorphous silicon with a group VI element are laminated.

  Subsequently, the photoelectric conversion element 5 will be described. On the surface 2a of the insulating substrate 2, the insulating layer 51 formed integrally with the gate insulating layer 64 described above is laminated, and on that, An auxiliary electrode layer 52 made of Al, Cr, or the like is laminated and formed. On the auxiliary electrode layer 52, the insulating layer 53 formed integrally with the first passivation layer 67 described above is laminated.

  A first electrode layer 54 made of Al, Cr, Mo or the like is laminated on the insulating layer 53, and the first electrode layer 54 is formed on the TFT 6 through the hole H formed in the first passivation layer 67. Connected to the source electrode 61.

  On the first electrode layer 54, a so-called n-layer 55 formed in a n-type by doping a hydrogenated amorphous silicon with a group VI element, formed of hydrogenated amorphous silicon, and irradiated with electromagnetic waves, A so-called i layer 56 that is a conversion layer that generates hydrogen, and a so-called p layer 57 that is formed into a p-type by doping a group III element into hydrogenated amorphous silicon are sequentially stacked from below.

  That is, in the present embodiment, the photoelectric conversion element 5 is formed as a so-called PIN type photodiode. Note that the order of the n layer 55, the i layer 56, and the p layer 57 may be reversed. In addition, the photoelectric conversion element 5 is not limited to a PIN type photodiode, and may be configured by another type of photodiode such as a MIS (Metal-Insulator-Semiconductor) type.

  A second electrode layer 58 made of a transparent electrode such as ITO (Indium Tin Oxide) is laminated on the p layer 57, and the second electrode layer 58 is formed on the upper surface of the second electrode layer 58. A bias line 7 for applying a reverse voltage to the photoelectric conversion element 5 by applying a voltage to is connected. Although the illustration of the bias line 7 is omitted in FIGS. 1 and 2, etc., in the present embodiment, the second electrode layer 58 of each photoelectric conversion element 5 connected to one signal line 4 is provided. A single bias line 7 is used for connection.

  The photoelectric conversion element 5 of the present embodiment is driven by applying a reverse bias in this way, and the auxiliary electrode layer 52 is provided so as to face the first electrode layer 54 with the insulating layer 53 interposed therebetween as described above. Therefore, the dynamic range can be increased by the auxiliary electrode 52 functioning like a capacitor. The charge accumulated in the first electrode layer 54 is taken out to the signal line 4 through the source electrode 61 and the drain electrode 62 when the TFT 6 is turned on.

The second electrode layer 58 and the bias line 7 of the photoelectric conversion element 5 are covered with a second passivation layer 60 made of silicon nitride (SiN _x ) or the like from the upper side. The second passivation layer 60 is also formed on the TFT 6 side integrally with the second passivation layer 60 so as to cover the above-described first passivation layer 67 and the extended portion of the first electrode layer 54 of the photoelectric conversion element 5 from above. It is configured.

  As shown in FIG. 1, input / output terminals 8 are formed on each scanning line 3 and each signal line 4 on the outer side of the detection portion D on the surface 2 a of the insulating substrate 2 of the glass substrate 1. Yes. The input / output terminal 8 is also called a pad. Conductive wires 9 are extended to the outer sides of the input / output terminals 8, and the conductive wires 9 are connected to the outer sides of the input / output terminals 8 by common wires 10. A protection circuit 11 is formed by each of the conductive wires 9 and the common wire 10.

  In this embodiment, each conducting wire 9 is formed using ITO. Moreover, the conducting wire 9 can be a metal wire. In this case, a metal having a relatively high melting point such as tungsten, tantalum, or molybdenum is preferably used as the metal. As will be described later, the glass substrate 1 is used by being cut by laser cutting or the like at a cutting position L outside the input / output terminal 8 shown by a broken line in FIG. In this case, depending on the laser cutting conditions, the conductor 9 may be melted and scattered at the time of cutting, which may cause a short circuit or the like in the detection unit D or the like.

  In particular, when a metal wire is used as the conducting wire 9, the conducting wire 9 is preferably covered with an insulating film. For example, as shown in FIG. 8B to be described later, after cutting the glass substrate 1, a part of the conductor 9 remains in the input / output terminal 8, but when the remaining conductor 9 corrodes due to condensation, This is to prevent the input / output terminal 8 from being corroded.

  In that respect, if the conductive wire 9 is formed of a conductive oxide containing tin or zinc such as ITO or IZO (Indium Zinc Oxide) as in the present embodiment, it will not scatter and be cut off during laser cutting. Even if it remains afterwards, it does not corrode due to condensation or the like, so that it becomes possible to manufacture the electromagnetic wave detection device using the glass substrate 1 described later very simply.

  Each conductive wire 9 is provided with a diode ring structure 12. In the present embodiment, as shown in the equivalent circuit diagram of FIG. 4, the diode ring structure 12 is configured by combining, for example, two thin film transistors (TFTs). As shown in FIG. When the TFT 6 is formed on R, the diode ring structure 12 can be formed at a predetermined position outside the input / output terminal 8 by using the same material as that of the TFT 6 in the same manufacturing process.

  The glass substrate 1 is inspected by injecting and reading charges from the input / output terminal 8 as a final inspection process after being manufactured. At this time, since the glass substrate 1 of the present embodiment has the protection circuit 11, If each input / output terminal 8 is short-circuited by the protection circuit 11, the charge injected from the input / output terminal 8 in the above-described inspection is transferred to the other input / output terminals 8, the scanning lines 3, and the signal lines via the protection circuit 11. 4 will not be inspected.

  Therefore, by providing the diode ring structure 12, the protection circuit 11 can have a certain amount of electrical resistance, and the above-described inspection can be performed. However, if the resistance value is too high, the charging of the scanning line 3 and the signal line 4 due to static electricity is difficult to be dispersed, and the charge is concentrated on a specific wiring, resulting in fluctuations in the operating voltage of the TFT 6. Therefore, the resistance value is appropriately set so that the diode ring structure 12 can appropriately perform any of the above functions.

  Next, the operation of the glass substrate 1 according to this embodiment will be described.

  In the glass substrate 1, as will be described later, the scintillator substrate in a manufacturing process such as a scintillator bonding step (see step S <b> 1 in FIG. 6, which will be described later, FIG. 7), for example, in which the scintillator 30 is bonded to the detection unit D of the glass substrate 1 And a large static electricity can be generated between the detector D and the like. When static electricity is generated in this way, the scanning lines 3 and signal lines 4 on the glass substrate 1 are charged by the generated static electricity.

  However, the charging of the scanning line 3 and the signal line 4 is distributed to the other wirings 3 and 4 via the conducting wire 9 and the common line 10 of the protection circuit 11, and it is avoided that the charges are concentrated on a specific wiring. . Therefore, it is possible to avoid a large potential difference between the source electrode 61, the drain electrode 62, and the gate electrode 63 of the TFT 6 in each small region R connected to the scanning line 3 and the signal line 4, and the variation of the operating voltage of the TFT 6 and physical Occurrence of typical destruction is avoided.

  On the other hand, as will be described later, in the cutting step (see step S2 in FIG. 6 to be described later, FIG. 8 and the like), the glass substrate 1 is cut at the cutting position L by using a laser cutting technique, The protection circuit 11 including the diode ring structure 12 is cut off from the glass substrate 1. Thus, it forms in the shape of the glass substrate 20 used for the electromagnetic wave detection apparatus as shown in FIG.

  In this case, a portion of the lead wire 9 connected to the input / output terminal 8 remains slightly, but each lead wire 9 of the protection circuit 11 is not cut one by one by the laser light as in the prior art described above. As shown in a method for manufacturing an electromagnetic wave detection device (see FIG. 6) described later, the cutting position by irradiation of laser light from the surface 2a (front surface) side of the insulating substrate 2 or the opposite surface (back surface) side. Since the insulating substrate 2 is cut along with the cutting process along L, it is possible to cut each conducting wire 9 very quickly and reliably.

  Further, the conductor 9, the common wire 10, the diode ring 12, etc. outside the cutting position L that may be short-circuited with the remaining conductor 9 are removed by cutting the insulating substrate 2, and each input / output terminal 8 Since the conductors 9 remaining in the part are separated so as not to cause a short circuit, the short circuit between the conductors 9 is reliably removed in the glass substrate 20 from which the protection circuit 11 has been removed (see FIG. 5). , No leakage current occurs between the conductors 9.

  As described above, according to the glass substrate 1 according to the present embodiment, since the protection circuit 11 including the conducting wire 9 and the common line 10 connected to the scanning line 3 and the signal line 4 of the glass substrate 1 is provided, static electricity or the like. Even when a large charge occurs, it is possible to effectively avoid fluctuations in the operating voltage and physical breakdown of the TFT 6.

  Further, since the protection circuit 11 is provided outside the input / output terminal 8 provided outside the detection portion D of the glass substrate 1, the protection circuit 11 is protected from the glass substrate 1 at a stage where the possibility of generating large static electricity is reduced. 11 is cut and removed. When the protection circuit 11 is cut and removed, the conductors 9 are surely cut, so that the short circuit between the conductors 9 is reliably removed and the occurrence of leakage current between the conductors 9 can be reliably prevented. It becomes possible.

  In addition, although the glass substrate 20 after the glass substrate 1 and the protection circuit 11 were cut | disconnected was demonstrated using said FIGS. 1-5, the glass substrate 1 which concerns on this embodiment is shown to these figures. It is not limited to the form.

  Further, the protection circuit 11 may be formed on all peripheral portions of the four sides of the rectangular insulating substrate 2 constituting the glass substrate 1, and as long as the function is sufficiently exhibited, the protective circuit 11 has four peripheral edges. You may form in the peripheral part of 2-3 sides of a part.

  Further, a protection circuit similar to the above can be provided for the bias line 7 shown in FIG. 3, and a protection circuit can be formed integrally with the scanning line 3 and the signal line 4.

[Method of manufacturing electromagnetic wave detection device]
Next, the manufacturing method of the electromagnetic wave detection apparatus (FPD) using said glass substrate 1 is demonstrated. The manufacturing method of the electromagnetic wave detection device according to the present embodiment is performed according to the flowchart shown in FIG. Hereinafter, description will be given according to this flowchart.

  In the following, a case of manufacturing a so-called indirect type electromagnetic wave detection device that detects an electromagnetic wave that has been irradiated by converting it to an electromagnetic wave of other wavelengths such as visible light with a scintillator will be described.

  In the manufacture of the electromagnetic wave detection device, as shown in FIG. 7, first, a scintillator bonding step of bonding the scintillator 30 to the detection part D of the glass substrate 1 is performed (step S1 in FIG. 6).

  The scintillator 30 is, for example, a phosphor whose main component is converted into an electromagnetic wave having a wavelength of 300 to 800 nm when an electromagnetic wave is incident, that is, an electromagnetic wave centered on visible light, and output.

  Further, as a method of attaching the scintillator 30 to the detection part D of the glass substrate 1, as shown in FIG. 7, a phosphor is applied in advance on the surface of a glass substrate 31 or the like separate from the glass substrate 1, or vapor deposition is performed. The scintillator substrate 32 in which the scintillator 30 is formed in a layer shape is bonded to the scintillator 30 with the scintillator 30 facing the detection unit D side. In addition to this, for example, the scintillator 30 is formed in layers by directly applying or vapor-depositing a phosphor on the detection portion D of the glass substrate 1, and the upper surface thereof is configured by a glass substrate, a resin thin film, or the like. It is also possible to configure such that they are bonded together with a cover member that is not covered.

  As in this scintillator bonding step (step S1 in FIG. 6), a member such as a scintillator substrate 32 or a cover member having at least half the area of the detection portion D of the glass substrate 1 is brought close to the glass substrate 1. Alternatively, in the approaching contact process in which contact is made, large static electricity is likely to be generated between the member such as the scintillator substrate 32 and the detection portion D of the glass substrate 1, and the scanning lines 3 and the signal lines 4 on the glass substrate 1 are likely to be charged. . Therefore, in such a process, the protection circuit 11 of the glass substrate 1 is not cut and the members are approached and contacted (bonded) while the protection circuit 11 is connected to the input / output terminal 8.

  Then, the cutting process which cut | disconnects the glass substrate 1 in the cutting position L is performed (step S2 of FIG. 6). In the cutting process, the protection circuit 11 formed outside the input / output terminal 8 of the glass substrate 1 is cut off together with the insulating substrate 2 at a cutting position L (see FIG. 1) outside the input / output terminal 8.

  In the cutting process of this embodiment, laser light is irradiated to the cutting position L from the surface 2a (front surface) side of the insulating substrate 2 of the glass substrate 1 on which the protection circuit 11 is formed, as shown in FIG. In addition, a substantially V-shaped groove M is formed in the surface 2 a while cutting each conductive wire 9. Then, by applying a predetermined pressure from the surface 2a side to the protective circuit 11 side of the insulating substrate 2, the protective circuit 11 is cut off as if it were folded together with the insulating substrate 2, as shown in FIG. 8B. ing.

  When the grooves M are formed by this laser light irradiation, the conductors 9 are cut. As described above, the conductors 9 are conductive oxides containing tin and zinc such as ITO and IZO, tungsten, tantalum, molybdenum, and the like. If it is made of a metal having a relatively high melting point, it can be prevented from being melted and scattered at the time of laser cutting, thereby preventing occurrence of a short circuit or the like.

  In the cutting step (step S2 in FIG. 6), the glass substrate 1 can be cut off from the surface opposite to the surface 2a of the insulating substrate 2 on which the protection circuit 11 is formed. This will be described later.

  As described above, when each conductor 9 is made of metal, the conductor 9 remaining in the vicinity of the input / output terminal 8 as shown in FIG. 8B is not corroded by condensation or the like. Is preferably covered with an insulating film, but, even if the conductor 9 is not covered with an insulating film, it is corroded from the cut end of the conductor 9 at the cutting position L. It is conceivable that the input / output terminal 8 is corroded.

  Therefore, after the cutting step, the entire conductor 9 remaining in the vicinity of the input / output terminal 8, or when the conductor 9 is covered with an insulating film, for example, silicon rubber is applied to at least the cut end, A protective tape may be attached to the portion. In addition, when the conducting wire 9 is formed of a conductive oxide containing tin or zinc such as ITO or IZO as in the present embodiment, it is not corroded by condensation or the like. Is unnecessary.

  Subsequently, for tab connection by COF (Chip On Film), a COF crimping process for crimping the COF to the input / output terminal 8 is performed (step S3 in FIG. 6).

  In the COF press-bonding process, an anisotropic conductive adhesive film (Anisotropic Conductive Film) is formed at a connection point between the COF 33 formed by punching from the COF reel performed in parallel with the cutting process described above and the input / output terminal 8 of the glass substrate 20. ) Or an anisotropic conductive paste (Anisotropic Conductive Paste) is applied, and the protective circuit 11 cuts the COF 33 through these anisotropic conductive adhesive materials 34 as shown in FIG. Then, the glass substrate 20 is crimped to the upper surface of the input / output terminal 8.

  The anisotropic conductive adhesive material 34 includes a conductor (coated metal particles), and the COF 33 is bonded to the input / output terminal 8 while being electrically connected to the input / output terminal 8 by being crimped thereto. However, parts other than the input / output terminals 8 are electrically bonded in an insulated state. Accordingly, the COF 33 is energized only with each input / output terminal 8.

  In the actual process, after the COF 33 is pressure-bonded to the input / output terminal 8, a COF energization inspection process for inspecting whether the COF 33 and each input / output terminal 8 are energized is performed (step S4 in FIG. 6). ), The COF 33 in which the energization failure has occurred is peeled off, and another COF 33 is crimped to the input / output terminal 8 again or in the same manner as described above.

  Note that static electricity may also be generated when the COF 33 is crimped to the input / output terminal 8. Whether or not static electricity is generated in the COF pressure bonding process (step S3) and the magnitude of the static electricity generated depend on the performance of the static eliminator used in the manufacturing process. If relatively large static electricity can be generated in the COF pressure bonding process, it is better that the protective circuit 11 is present on the glass substrate at the time of the COF pressure bonding process (step S3). Therefore, in such a case, the cutting process (step S2) is performed after the COF pressure bonding process (step S3) and the COF energization inspection process (step S4).

  However, in the cutting process in this case, as shown in FIG. 10, since the COF 33 is above the cutting position L for cutting the protection circuit 11, in this case, the protection circuit 11 is formed on the glass substrate 1. It is preferable to cut off from the surface 2b side opposite to the surface 2a of the insulating substrate 2.

Specifically, a laser beam is irradiated to a position corresponding to the cutting position L from the back surface 2b side of the insulating substrate 2 of the glass substrate 1 to form a substantially V-shaped groove M ^* on the back surface 2b. By applying a predetermined pressure from the back surface 2b side, the protection circuit 11 portion of the insulating substrate 2 is broken and cut, and at the same time, each conductor 9 is cut. If the insulating substrate 2 is cut from the back surface 2b in this manner, the glass substrate 1 can be cut without damaging the COF 33 and the like.

  If the cutting process (step S2) is performed after the COF pressure bonding process (step S3 in FIG. 6) or the COF energization inspection process (step S4), the protection circuit 11 of the glass substrate 1 remains in the existing state. It is possible to perform repair work such as COF pressure bonding, and to reliably prevent the TFT 6 from being damaged due to static electricity on the scanning lines 3 and signal lines 4 on the glass substrate 1 during the repair work. Is possible.

  Subsequently, a PCB substrate crimping process for crimping a PCB substrate for driving the IC 35 (see FIG. 9 and the like) on the COF 33 to the COF is performed (step S5 in FIG. 6). In the PCB substrate crimping process, as shown in FIG. 11, the COF 33 crimped to the input / output terminal 8 is drawn to the back surface 2b side of the insulating substrate 2, and the PCB substrate 36 and the COF 33 are crimped on the back surface 2b side. . In this way, the glass substrate 20 portion of the electromagnetic wave detection device is formed.

  Here, as shown in FIG. 11, after the glass substrate 1 on which the protection circuit 11 is formed forms a substantially V-shaped groove by irradiating laser light from the surface 2a side of the insulating substrate 2, the protection circuit By bending 11 together with the insulating substrate 2, a surface 2d that is automatically chamfered is formed on the surface 2a side of the cut surface 2c of the insulating substrate 2. Therefore, it is possible to prevent the COF 33 drawn to the back surface 2b side of the insulating substrate 2 from being rubbed and cut at the corners on the surface 2a side of the cut surface 2c of the insulating substrate 2.

  In this case, it is also possible to perform a process such as applying a protective tape to the cut surface 2c or the like so that the COF 33 is not rubbed and cut at the corners of the cut surface 2c of the insulating substrate 2.

  Subsequently, after a corrosion prevention step of applying silicon rubber or resin for corrosion prevention to a portion that may corrode such as an exposed portion of a metal member (step S6 in FIG. 6), A module forming step is performed in which a support base, a base, etc. (not shown) are fixed to the glass substrate 20 to be modularized (step S7). Then, as shown in FIG. 12, the finally-modulated glass substrate 20 is housed in the casing 41 to manufacture the electromagnetic wave detection device 40 (step S8 in FIG. 6). In FIG. 12, the interval between the scanning lines 3 and the interval between the signal lines 4 are expressed much coarser than actual, and the small region R (one pixel) partitioned by the scanning lines 3 and the signal lines 4 is Actually it is much finer than what is shown.

  As described above, according to the method for manufacturing the electromagnetic wave detection device 40 according to the present embodiment, the glass substrate 1 is used to input / output the protection circuit 11 formed outside the input / output terminal 8 of the glass substrate 1. By cutting off the insulating substrate 2 together with the insulating substrate 2 and forming the glass substrate 20 outside the terminals 8, even if the static electricity is generated in the manufacturing process and the scanning lines 3 and signal lines 4 of the glass substrate 1 are charged, the scanning lines 3 and signals The charging of the line 4 is distributed to the other wirings 3 and 4 through the conductive wire 9 and the common line 10 of the protection circuit 11, and it is avoided that the electric charge is concentrated on a specific wiring. Therefore, it is possible to avoid a large potential difference between the source electrode 61, the drain electrode 62, and the gate electrode 63 of the TFT 6 in each small region R of the glass substrate 1 connected to the scanning line 3 and the signal line 4. It is possible to avoid the fluctuation of the operating voltage and the occurrence of physical destruction.

  Further, even if the glass substrate 1 is cut by a method such as laser cutting in the cutting step and the protection circuit 11 is cut off from the glass substrate 1, a portion of the conducting wire 9 that is connected to the input / output terminal 8 remains slightly. However, each conductive wire 9 of the protection circuit 11 is not cut one by one by the laser beam as in the prior art described above, but the surface 2a (front surface) side of the insulating substrate 2 or the opposite surface (back surface). Since the insulating substrate 2 is cut at a stroke in accordance with the cutting process of the insulating substrate 2 along the cutting position L by the irradiation of the laser beam from the side, it is possible to cut each conducting wire 9 very quickly and reliably.

  Furthermore, when the protective circuit 11 is cut off from the glass substrate 1, each conductor 9 is surely cut, so that the short circuit between the conductors 9 is reliably removed and the occurrence of leakage current between each conductor 9 is reliably prevented. It becomes possible to do.

  Further, in the manufacture of the electromagnetic wave detection device 40, it has an area that is more than half of the area of the detection part D of the glass substrate 1 as in the scintillator bonding step of bonding the scintillator substrate 32 and the like to the detection part D of the glass substrate 1. By bringing a member close to or in contact with the glass substrate 1 and cutting the protective circuit 11 of the glass substrate 1 after the process in which the glass substrate 1 is easily charged, fluctuations in the operating voltage of the TFT 6 due to static electricity and physical breakdown are generated. It is possible to disconnect the protection circuit 11 after avoiding it reliably, and the effects of the protection circuit 11 can be fully exhibited.

  In the manufacture of the electromagnetic wave detection device 40, the member having an area of more than half of the area of the detection part D approaching and contacting the detection part D of the glass substrate 1 is not limited to the scintillator substrate 32 and the cover member. In some cases, the base supports the glass substrate 1, the PCB substrate 36, and the like. As described above, the protection circuit 11 of the glass substrate 1 can be cut after the base is brought close to and brought into contact with the glass substrate 1. If comprised in this way, it will become possible to exhibit said effect more correctly.

  Further, in the present embodiment, a case where a substantially V-shaped groove is formed by irradiating laser light from the front surface 2 a and the back surface 2 b of the insulating substrate 2 of the glass substrate 1, and the protection circuit 11 is folded together with the insulating substrate 2. In addition to the above description, the insulating substrate 2 may be directly cut by, for example, laser light irradiation. Moreover, it is also possible to comprise so that it may cut | disconnect by methods, such as a diamond cut.

It is a top view which shows the glass substrate in which the protection circuit which concerns on this embodiment was formed. It is an enlarged view which shows the structure of the photoelectric conversion element, thin film transistor, etc. which were formed in the small area | region on a glass substrate. It is sectional drawing which follows the AA line in FIG. It is an equivalent circuit diagram of the diode ring structure of the protection circuit. It is a top view which shows the glass substrate from which the protective circuit was cut off. It is a flowchart which shows the manufacturing process of the manufacturing method of the electromagnetic wave detection apparatus which concerns on this embodiment. It is a figure explaining the bonding operation | movement of the scintillator with respect to the glass substrate in a scintillator bonding process. (A) It is a figure explaining the state by which the groove | channel formed in a glass substrate in a cutting process, and (B) the protection circuit 1 are folded together with the insulating substrate 2. FIG. It is a figure explaining COF crimped | bonded to the input-output terminal in the COF crimping | compression-bonding process. It is a figure explaining the state which cuts off the glass substrate which crimped | bonded COF to the input / output terminal from the back surface side. It is a figure explaining the glass substrate to which the PCB board | substrate was attached. It is a perspective view which shows the manufactured electromagnetic wave detection apparatus.

Explanation of symbols

1 glass substrate 2a surface (one surface of the glass substrate)
2b Back surface (surface on the opposite side of the glass substrate)
3 Scanning line 4 Signal line 5 Photoelectric conversion element 54 First electrode layer (one electrode of photoelectric conversion element)
6 Thin film transistor (TFT)
61 Source electrode 62 Drain electrode 63 Gate electrode 8 Input / output terminal 9 Conductor 10 Common line 11 Protection circuit 12 Diode ring structure 30 Scintillator 32 Scintillator substrate 40 Electromagnetic wave detection device D Detection part R Area

Claims (11)

A glass substrate used in an electromagnetic wave detection device,
On one side,
A plurality of scanning lines and a plurality of signal lines arranged to cross each other;
A photoelectric conversion element that is provided in each region on the surface partitioned by the plurality of scanning lines and the plurality of signal lines, and generates electric charges by irradiation of electromagnetic waves;
A thin film transistor provided in each of the regions, wherein one electrode of the photoelectric conversion element, a signal line, and a scanning line are respectively connected to a source electrode, a drain electrode, and a gate electrode;
Input / output terminals formed on the plurality of scanning lines and the plurality of signal lines, respectively, outside the detection unit composed of each region where the photoelectric conversion element is formed,
A protection circuit comprising a conductive wire extending to the outside of each of the input / output terminals, and a common wire for connecting the conductive wires to the outside of the input / output terminals, respectively.
A glass substrate comprising:   The glass substrate according to claim 1, wherein the conductive wire is formed of an oxide containing tin or zinc, tungsten, tantalum, or molybdenum.   The glass substrate according to claim 1, wherein the conductive wire is covered with an insulating film. The conducting wire is provided with a diode ring structure,
The glass substrate according to any one of claims 1 to 3, wherein the diode ring structure is formed of a thin film transistor. It is a manufacturing method of the electromagnetic wave detection apparatus using the glass substrate as described in any one of Claims 1-4,
The manufacturing method of the electromagnetic wave detection apparatus characterized by having the cutting process which cuts off the said protection circuit formed outside the said input / output terminal of the said glass substrate with the board | substrate outside the said input / output terminal.   6. The method of manufacturing an electromagnetic wave detection device according to claim 5, wherein the cutting step is performed after another step in which the glass substrate is easily charged. An approach contact step of bringing a member having an area of half or more of the area of the detection portion of the glass substrate into contact with or in contact with the glass substrate;
The said cutting process is performed after the said approach contact process, The manufacturing method of the electromagnetic wave detection apparatus of Claim 5 or Claim 6 characterized by the above-mentioned.   The method according to claim 7, wherein the member is a scintillator substrate or a cover member of the scintillator.   The method for manufacturing an electromagnetic wave detection device according to claim 7, wherein the member is a base.   10. The method of manufacturing an electromagnetic wave detection device according to claim 5, wherein, in the cutting step, the glass substrate is cut off from the one surface side on which the protection circuit is formed. 11. .   The electromagnetic wave according to any one of claims 5 to 9, wherein, in the cutting step, the glass substrate is cut off from a surface side opposite to the one surface on which the protection circuit is formed. A method for manufacturing a detection device.

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