CN112301424A - Silicon boat for CVD process and repairing and cleaning method thereof - Google Patents
Silicon boat for CVD process and repairing and cleaning method thereof Download PDFInfo
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- CN112301424A CN112301424A CN202010961018.3A CN202010961018A CN112301424A CN 112301424 A CN112301424 A CN 112301424A CN 202010961018 A CN202010961018 A CN 202010961018A CN 112301424 A CN112301424 A CN 112301424A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
The invention provides a silicon boat for a CVD process and a repairing and cleaning method thereof, aiming at overcoming the technical problem that the silicon boat can not be recycled after polysilicon deposition in the prior art, wherein the silicon boat comprises a top plate, a flange and a groove rod. The effective areas of the groove teeth and the groove rods in the silicon boat are small, when the film is deposited to a certain thickness, the probability of pollution of peeled film particles to the wafer is reduced, and the repairing and cleaning method can effectively remove the surface deposition layer and simultaneously can not bring great damage and shape change to the surface of the silicon boat substrate, so that the silicon boat can be recycled in the polycrystalline silicon film deposition process.
Description
Technical Field
The invention relates to the technical field of semiconductor silicon material manufacturing, in particular to a silicon boat for a CVD (chemical vapor deposition) process and a repairing and cleaning method thereof.
Background
CVD, which is an important and common process in wafer processing, is the deposition of solid films, such as poly-Si and SiO, on the surface of a silicon wafer by a gas phase chemical reaction2) And silicon nitride (Si)3N4) And the like. In the process of film deposition, wafers are carried by a wafer boat and enter a deposition furnace for wafer processing.
Because the wafer boat can generate self film deposition along with the film deposition on the surface of the wafer in the use process, when the self film deposition reaches a certain thickness, the film can generate fine cracking due to the internal stress of the film, and the film desorption phenomenon is generated. The desorbed tiny film particles can be mixed with reaction gas and deposited on the wafer, so that the failure of a circuit or a device is caused; therefore, the wafer boat for the CVD process needs to be cleaned after being used for a certain time, and can be used again after the surface deposition layer is removed.
The silicon carbide boat can be corroded by high-concentration acid liquor due to good acid and alkali resistance, so that the surface deposition layer is only needed to be corroded by mixed acid, and the deposition layer is simpler to treat. However, since silicon carbide boats are expensive and their supply is monopolized abroad, the supply of domestic silicon carbide boats has a great gap, and thus a good substitute for silicon carbide boats is urgently needed. Silicon boats have a higher material purity and a thermal expansion coefficient closer to that of wafers than silicon carbide boats, and thus silicon boats have been used more and more widely in wafer processing in recent years, particularly in high-temperature processing processes such as oxidation, annealing, and the like.
Because the silicon boat is made of high-purity polycrystalline silicon and is made of the same material as deposited polycrystalline silicon (poly-Si), the polycrystalline silicon deposited on the surface cannot be accurately separated from the polycrystalline material of the silicon boat body. Therefore, a proper cleaning process needs to be designed and developed through a certain structure to be successfully applied to the polysilicon deposition process, so that the recycling is realized.
Chinese patent publication No. CN101359581B, publication No. 2010.12.01, discloses a method for cleaning a silicon carbide boat, which comprises the following steps;
a. cleaning the surface of the silicon carbide boat, namely cleaning the surface of the silicon carbide boat by using a detergent to remove grease and particles on the surface of the silicon carbide boat;
b. soaking in aqua regia;
c. soaking in hydrofluoric acid;
d. flame polishing, namely performing flame jet polishing treatment on the silicon carbide boat by using oxyhydrogen flame;
e. heat treatment;
f. and (4) surface treatment, namely performing edge grinding treatment or polishing by using a polishing machine on the surface of the silicon carbide boat, and cleaning.
The patent provides a method for cleaning a silicon boat, which has the problems that the cleaning, polishing and surface treatment operations are rough, the surface of a substrate of the silicon boat is easily damaged greatly, the appearance of the substrate is changed greatly, and the rejection rate after cleaning is high.
Disclosure of Invention
The invention provides a silicon boat for a CVD process and a repair cleaning method thereof, aiming at overcoming the technical problem that the silicon boat can not be recycled after polysilicon deposition in the prior art, wherein the effective area of groove teeth and groove rods in the silicon boat is smaller, the probability of pollution of peeled film particles to a wafer is reduced when a film is deposited to a certain thickness, and the repair cleaning method can effectively remove a surface deposition layer without causing great damage and shape change to the surface of a silicon boat substrate, thereby ensuring that the silicon boat can be recycled in the polysilicon film deposition process.
In order to achieve the above object, the present invention adopts the following technical solutions.
A repairing and cleaning method for a silicon boat is characterized in that after the silicon boat is assembled, surface oxidation treatment is needed to form an oxidation film with the thickness of W, the repairing and cleaning method is carried out after the thickness of a polycrystalline deposition layer on the surface of the silicon boat reaches H, and the repairing and cleaning method comprises the following steps:
a. etching the surface of the silicon boat by alkali liquor, wherein the etching time of the alkali liquor is positively correlated with the thickness of the polycrystalline deposition layer on the surface of the silicon boat, and the etching of the alkali liquor is stopped when the oxide film is exposed;
b. cleaning the surface of the silicon boat with acid liquor, wherein the acid liquor cleaning is stopped after the oxide film is removed;
c. d, carrying out sand blasting treatment on the surface of the silicon boat to remove the trace residual oxide film on the surface of the silicon boat after the step b;
d. ultrasonic cleaning of the surface of the silicon boat;
e. etching the surface of the silicon boat by mixed acid;
f. and growing an oxide layer on the surface of the silicon boat, and finishing the repairing and cleaning of the silicon boat when the thickness of the silicon oxide film grown on the surface of the silicon boat is h.
The application provides a repairing and cleaning method of a silicon boat, wherein the silicon boat is subjected to surface oxidation treatment before being used for the first time and after being assembled, and a formed oxidation film plays a role in resisting chemical corrosion when the subsequent silicon boat needs to be cleaned, namely, the cleaning solution is isolated from the silicon boat by the oxidation film, so that the silicon boat is prevented from being damaged due to the fact that the cleaning solution is in direct contact with the silicon boat; after the silicon boat uses a period of time, the surface can deposit the shaping polycrystalline silicon film, and this application uses specific surface treatment technology to clear away this sedimentary deposit, and the silicon boat after the washing can avoid the emergence of film desorption phenomenon to can realize the cyclic utilization of silicon boat. Specifically, the deposited layer is etched by using alkali liquor in the step a, the step is coarse cleaning operation of the deposited layer, the deposited layer of the polycrystal with different thicknesses is etched for different time, and the alkali liquor etching is stopped when an oxide film on the silicon boat is exposed; because the deposited layer is also attached to the oxide film, the deposited layer and the oxide film are difficult to completely peel off, the oxide film is cleaned by using acid liquor etching after the coarse cleaning of the alkali liquor, the deposited layer attached to the oxide film is synchronously cleaned after the oxide film is cleaned, the cleanliness of the deposited layer is high, and the cleaning operation is convenient; c, removing the residual oxide film to remove trace residual films which cannot be completely removed by the corrosion of the surface chemical liquid; d, ultrasonically cleaning the surface of the silicon boat to remove particle pollution caused by sand blasting with a certain particle size; e, carrying out chemical mixed acid etching on the surface of the silicon boat to remove particles and metal pollution caused by surface sand blasting; and f, growing an oxide layer on the surface of the silicon boat, and growing a silicon oxide film with a certain thickness, so that the repairing and cleaning of the silicon boat are finished, and the next round of chip polycrystalline silicon film deposition process can be carried out.
Preferably, the surface oxidation treatment is steam oxidation, and W is
The thickness can ensure that the surface of the silicon boat has enough corrosion resistance when the subsequent long-time chemical treatment is carried out.
Preferably, the alkali liquor in the step a is 10% by mass of potassium hydroxide solution, and the etching temperature of the alkali liquor is 50 ℃. The alkaline solution has high selectivity on the etching rate of polysilicon and silicon oxide, wherein the polysilicon is quickly corroded in the solution, and the silicon oxide can resist the corrosion of potassium hydroxide to prevent the over-etching of the silicon boat body.
Preferably, the mixed acid in the step e comprises hydrofluoric acid, nitric acid and acetic acid, and the volume ratio of each component is as follows: hydrofluoric acid: nitric acid: acetic acid is 1:10:15, the mass concentration of hydrofluoric acid is 49%, the mass concentration of nitric acid is 70%, the mass concentration of acetic acid is 99.8%, the etching time of mixed acid is more than 10min, and the etching temperature of mixed acid is 25 ℃. The acid liquor used in the chemical mixed acid etching is hydrofluoric acid (49%), nitric acid (70%) and acetic acid (99.8%) with the grade above the electronic grade, and the soaking corrosion of the surface of the silicon boat is completed within a certain time according to a certain proportion.
Preferably, the frequency of ultrasonic cleaning in step d is 40kHz, and the ultrasonic medium is pure water with the resistivity of more than 15M. Under the above conditions, the contamination of particles with a particle diameter of 2um or more is eliminated.
Preferably, the sand used for the blasting in step c is a silicon carbide powder of 600 mesh or larger. The hardness of the silicon carbide powder is moderate, residual films on the surface can be effectively removed, and the original roughness of the silicon boat body cannot be influenced by the granularity of more than 600 meshes.
The silicon boat for the CVD process suitable for the repair cleaning method comprises an upper plate, a flange and a groove rod, and is characterized in that a first welding groove is formed in the end face of the upper plate, a second welding groove is formed in the end face, close to the upper plate, of the flange, a first welding head matched with the first welding groove is arranged at one end of the groove rod, and a second welding head matched with the second welding groove is arranged at the other end of the groove rod.
Preferably, the groove rod comprises a body and a plurality of groove teeth arranged at intervals along the length direction of the body, the cross sections of the groove teeth are rectangular, and the end parts of the groove teeth, far away from the body, are rounded. The cross-section of ditch tooth is the rectangle, and its one side is connected with ditch stick body, and two most advanced of opposite side have the fillet, and the ditch tooth sectional area of short tooth structure is less in this application, and this kind of structure can reduce the effective area of ditch tooth and ditch stick, and when the film deposition was to certain thickness, the film granule that reduces to peel off led to the fact the probability of pollution to the wafer.
Preferably, the groove rod is connected with the flange and the ceiling through high-temperature welding, the welding materials are high-temperature-resistant glue and quartz powder, the high-temperature-resistant glue is clean glue for a special semiconductor grade, and the granularity of the quartz powder is 1200 meshes. The high-temperature welding mode is that the welding process is completed for 10 hours at 1100 ℃ by special high-temperature resistant glue and quartz powder; the high-temperature-resistant glue is clean glue for a special semiconductor grade, can bear the high temperature of more than 1000 ℃ without serious decomposition, and thus the stability of a welding structure is ensured; the granularity of the quartz powder is 1200 meshes, and the quartz powder with the mesh number has larger specific surface area, can be more fully combined with glue, and increases the welding strength.
Preferably, the surface roughness of the silicon boat is 2um or more. The thicker surface can increase the adsorption strength of the deposited film, reduce the internal stress of the film and reduce the probability of particle pollution caused by film cracking.
In conclusion, the invention has the following beneficial effects: (1) the short-tooth silicon boat with the surface plated with the oxide film is provided, and chemical cleaning of a polycrystalline silicon deposition layer on the surface of the silicon boat can be realized through the corrosion resistance of the oxide film; (2) for the silicon boat with the thickness of the polycrystalline silicon film being deposited to the upper limit of use, a set of cleaning method for the surface polycrystalline silicon deposition layer is provided, so that the surface deposition layer can be effectively removed, and meanwhile, the surface of the substrate of the silicon boat cannot be greatly damaged and changed in appearance, and the silicon boat can be ensured to be recycled in the polycrystalline silicon film deposition process; (3) the silicon boat with the rough surface can increase the adsorption strength of the deposited film, reduce the internal stress of the film and reduce the probability of particle pollution caused by film cracking.
Drawings
FIG. 1 is a schematic view of the structure of a silicon boat according to the present invention.
Fig. 2 is a schematic diagram of the structure of the antenna in the present invention.
Fig. 3 is a schematic view of the flange structure of the present invention.
FIG. 4 is a schematic view of the structure of the grooved bars of the present invention.
FIG. 5 is a schematic view of the groove tooth structure of the present invention.
FIG. 6 is a schematic view of the structure of the silicon boat after CVD deposition.
FIG. 7 is a cross-sectional view of the groove bar and flange attachment location of the present invention.
In the figure:
the structure comprises a top plate 1, a flange 2, a groove rod 3, a first welding groove 4, a second welding groove 5, a first welding head 6, a second welding head 7, groove teeth 8, welding materials 9, a silicon boat substrate 10, an oxidation layer 11, a polycrystalline silicon film 12, an upper layer gap 13, a lower layer gap 14 and a flat cut gap 15.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used merely for convenience of description and for simplicity of description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1:
as shown in fig. 1 to 7, a repair cleaning method for a silicon boat, the silicon boat being assembled and then being subjected to a surface oxidation treatment to form an oxide film with a thickness W, the repair cleaning method being performed after a thickness of a polycrystalline deposition layer on the surface of the silicon boat reaches H, the repair cleaning method comprising the steps of: a. etching the surface of the silicon boat by alkali liquor, wherein the etching time of the alkali liquor is positively correlated with the thickness of the polycrystalline deposition layer on the surface of the silicon boat, and the etching of the alkali liquor is stopped when the oxide film is exposed; b. cleaning the surface of the silicon boat with acid liquor, wherein the acid liquor cleaning is stopped after the oxide film is removed; c. d, carrying out sand blasting treatment on the surface of the silicon boat to remove the trace residual oxide film on the surface of the silicon boat after the step b; d. ultrasonic cleaning of the surface of the silicon boat; e. etching the surface of the silicon boat by mixed acid; f. and growing an oxide layer on the surface of the silicon boat, and finishing the repairing and cleaning of the silicon boat when the thickness of the silicon oxide film grown on the surface of the silicon boat is h. The surface oxidation treatment mode is steam oxidation, and W is
And (b) selecting a 10% by mass potassium hydroxide solution as the alkali liquor in the step a, wherein the etching temperature of the alkali liquor is 50 ℃. The mixed acid in the step e comprises hydrofluoric acid, nitric acid and acetic acid, and the volume ratio of each component is as follows: hydrofluoric acid: nitric acid: acetic acid is 1:10:15, the mass concentration of hydrofluoric acid is 49%, the mass concentration of nitric acid is 70%, the mass concentration of acetic acid is 99.8%,the etching time of the mixed acid is more than 10min, and the etching temperature of the mixed acid is 25 ℃. The frequency of ultrasonic cleaning in the step d is 40kHz, and the ultrasonic medium is pure water with the resistivity larger than 15M. The sand used in the sand blasting treatment in the step c is silicon carbide powder with more than 600 meshes.
A silicon boat for a CVD process suitable for the repairing and cleaning method comprises an upper plate 1, a flange 2 and a groove rod 3 and is characterized in that a first welding groove 4 is formed in the end face of the upper plate, a second welding groove 5 is formed in the end face, close to the upper plate, of the flange, a first welding head 6 matched with the first welding groove is arranged at one end of the groove rod, and a second welding head 7 matched with the second welding groove is arranged at the other end of the groove rod. The ditch stick includes the body and along a plurality of ditch tooth 8 of body length direction interval arrangement, and the cross-section of ditch tooth is the rectangle, and the tip radius angle of body is kept away from to the ditch tooth. The groove rod is connected with the flange through high-temperature welding, welding materials are high-temperature-resistant glue and quartz powder, the high-temperature-resistant glue is clean glue for a special semiconductor grade, and the granularity of the quartz powder is 1200 meshes. The surface roughness of the silicon boat is more than or equal to 2 um.
As shown in fig. 1 and 5, in this embodiment, the silicon boat for CVD process includes, from top to bottom, a top plate, three groove rods and a flange, wherein the top plate and the flange are parallel to each other, three first welding grooves are formed in a lower end surface of the top plate, three second welding grooves are formed in an upper end surface of the flange, the three groove rods are all three, the three groove rods have the same structure, a first welding head matched with the first welding groove is arranged at an upper end of the groove rod, a second welding head matched with the second welding groove is arranged at a lower end of the groove rod, the first welding head is embedded in the first welding groove, the second welding head is embedded in the second welding groove, and the three groove rods are parallel to and perpendicular to the top plate and the flange after the groove rod is embedded. The groove rods are provided with a certain number of groove teeth, and the groove teeth with the same height on the three groove rods are matched to form a plane for bearing the silicon wafer. And (3) matching the assembled silicon boat, sequentially injecting welding materials 9 into welding grooves of the flange and the top plate, performing high-temperature welding as shown in fig. 7, performing steam oxidation on the welded silicon boat in a wet oxidation furnace to grow an oxide film, and finishing preparation of the silicon boat after the oxide film grows.
In the embodiment, the silicon boat and the parts are all prepared by using high-purity polycrystalline silicon materials, and the materials are similar to the wafers in the aspects of hardness, thermal expansion coefficient, purity and the like, so that exogenous pollution can be effectively avoided, and the contact damage of the wafer materials can be reduced. The groove teeth are arranged on the inner side of the groove rod, in the embodiment, the groove teeth are horizontal sheets parallel to the top plate and the flange, and the thickness of the groove teeth is preferably 2 mm; the groove tooth sheet is formed by cutting the groove rod, and the shape of the groove tooth sheet is consistent with the projection shape of the groove rod, so that the groove tooth is a rectangle with two tips at one side provided with round corners; in the embodiment, the width of the groove tooth sheet is preferably 4mm, so that the contact area between the groove tooth and the wafer can be effectively reduced, and the risk of particle pollution is reduced.
The structure of the deposited layer on the surface of the used silicon boat is shown in fig. 6, an oxide layer 11 grown by wet oxidation is arranged on a silicon boat substrate 10, a polysilicon film 12 deposited by chemical vapor in a furnace body is arranged on the oxide layer, and the film can generate particle stripping when reaching the thickness of 200um, so that the cleanliness of the wafer is influenced, therefore, the silicon boat needs to be repaired and cleaned, and the deposited layer on the surface of the polysilicon is removed.
The repairing and cleaning method of the silicon boat comprises the following steps:
(1) etching the surface of the silicon boat by using a KOH solution with the mass concentration of 10%, wherein the etching temperature is 50 ℃, the etching time is more than 4 hours, and the etching is carried out until an oxide film on the surface of the silicon boat is completely shown;
(2) cleaning the surface of the silicon boat for more than 30min by using HF with the mass concentration of 5% until the oxide film completely disappears;
(3) the whole surface of the silicon boat is subjected to rapid spraying and sweeping treatment under 0.3MPa by using 800-mesh SiC sand, a trace residual film which cannot be completely removed due to corrosion of surface chemical liquid is removed, and the step cannot cause great influence on the surface roughness of the silicon boat;
(4) cleaning the surface of the silicon boat by using pure water of 20 megaohms in 40kHz ultrasonic wave to remove particle pollution of more than 2um caused by sand blasting;
(6) the volume ratio of the silicon boat surface is hydrofluoric acid (49%): nitric acid (70%): acetic acid (99.8%) is 1:10:15, and the chemical mixed acid etching is carried out, wherein the etching temperature is 25 ℃, the etching time is 10min, and a sand blasting crushing layer and small particles with the particle size less than 2um on the surface are removed;
(7) the silicon boat enters a wet oxidation furnace, a steam oxidation procedure is started, and the silicon boat grows
And (4) finishing the repairing and cleaning of the silicon boat by the silicon oxide film with the thickness, and entering the next round of chip polycrystalline silicon film deposition process.
Example 2:
as shown in fig. 2 to 5, the trench teeth are arranged at equal intervals along the length direction of the trench rods, after the trench rods, the top plate and the flange are assembled, the distance between the top trench teeth and the top plate, i.e., the upper layer gap 13, is very small, in this embodiment, the upper layer gap is slightly larger than the distance between the two trench teeth, the distance between the bottom trench teeth and the flange, i.e., the lower layer gap 14, is relatively large, the flange is of a complete annular structure, the top plate is of an annular plate-shaped structure, and is provided with a flat cut notch 15 along the chord length direction, the trench rods include two front trench rods and one rear trench rod, the trench teeth on the three trench rods are all facing inwards along the radial direction of the flange, and the chord length direction of an arc line formed by the trench teeth at. The reason for the above structural design is that in order to ensure that the silicon boat has good stability, the silicon wafer insertion is performed from bottom to top, the lower layer gap is larger, so that the silicon wafer can be freely inserted, and the upper layer gap can also be similarly designed to be larger, but the structural design can cause the number of the grooves on the lower groove rod with the same length to be reduced, so that the number of the silicon wafers carried by the silicon boat is reduced. The upper clearance is minimum in this embodiment, and this design can promote the upper limit that bears of silicon chip under the unchangeable condition of ditch stick length, and the truncation breach on the day board can avoid the day board to cause the silicon chip cartridge of being close to the day board on the one hand and block, and on the other hand guarantees that the silicon chip cartridge is along the radial protrusion of day board, and efficiency is higher when top-down extracts the silicon chip like this, can not take place to be less than the inconvenient phenomenon of extraction that the day board size leads to because of the silicon chip size.
Claims (10)
1. A repairing and cleaning method of a silicon boat is characterized in that the repairing and cleaning method comprises the following steps:
a. etching the surface of the silicon boat by alkali liquor, wherein the etching time of the alkali liquor is positively correlated with the thickness of the polycrystalline deposition layer on the surface of the silicon boat, and the etching of the alkali liquor is stopped when the oxide film is exposed;
b. cleaning the surface of the silicon boat with acid liquor, wherein the acid liquor cleaning is stopped after the oxide film is removed;
c. d, carrying out sand blasting treatment on the surface of the silicon boat, and removing a trace residual oxide film on the surface of the silicon boat after the step b;
d. ultrasonic cleaning of the surface of the silicon boat;
e. etching the surface of the silicon boat by mixed acid;
f. and growing an oxide layer on the surface of the silicon boat, and finishing the repairing and cleaning of the silicon boat when the thickness of the silicon oxide film grown on the surface of the silicon boat is h.
2. The method as claimed in claim 1, wherein the surface oxidation treatment is steam oxidation, and W is
3. The method for cleaning and repairing a silicon boat as claimed in claim 1, wherein the alkali solution in step a is 10% by weight potassium hydroxide solution, the etching temperature of the alkali solution is 50 ℃, and the etching time of the alkali solution is more than 4 hours.
4. The method of claim 1, wherein the mixed acid in step e comprises hydrofluoric acid, nitric acid and acetic acid, and the volume ratio of the components is as follows: hydrofluoric acid: nitric acid: acetic acid is 1:10:15, the mass concentration of hydrofluoric acid is 49%, the mass concentration of nitric acid is 70%, the mass concentration of acetic acid is 99.8%, the etching time of mixed acid is more than 10min, and the etching temperature of mixed acid is 25 ℃.
5. The method as claimed in claim 1, 2, 3 or 4, wherein the ultrasonic cleaning frequency in step d is 40kHz and the ultrasonic medium is pure water with resistivity greater than 15M Ω.
6. The method for repairing and cleaning a silicon boat according to claim 1, 2, 3 or 4, wherein the sand used in the sand blasting in step c is silicon carbide powder with a mesh size of 600 mesh or more.
7. A silicon boat for CVD process suitable for the rework cleaning method of any one of claims 1 to 6, comprising a top plate, a flange and a groove rod, wherein the end surface of the top plate is provided with a first welding groove, the end surface of the flange close to the top plate is provided with a second welding groove, one end of the groove rod is provided with a first welding head matched with the first welding groove, and the other end of the groove rod is provided with a second welding head matched with the second welding groove.
8. The silicon boat of claim 7, wherein the trench rod comprises a body and a plurality of trench teeth spaced along a length of the body, the trench teeth having a rectangular cross-section and rounded ends of the trench teeth remote from the body.
9. The silicon boat of claim 7, wherein the trench rod is connected to the flange and the ceiling by high temperature welding, the welding material is high temperature resistant glue and quartz powder, the high temperature resistant glue is clean glue for special semiconductor grade, and the granularity of the quartz powder is 1200 meshes.
10. The silicon boat for CVD process according to claim 7, wherein the surface roughness of the silicon boat is 2 μm or more.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113399341A (en) * | 2021-05-12 | 2021-09-17 | 上海富乐德智能科技发展有限公司 | Cleaning regeneration method of SiC epitaxial wafer |
| CN115662928A (en) * | 2022-11-16 | 2023-01-31 | 杭州盾源聚芯半导体科技有限公司 | Silicon boat for reducing silicon wafer damage |
| CN116277917A (en) * | 2023-03-14 | 2023-06-23 | 苏州高芯众科半导体有限公司 | Equipment cleaning process |
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| CN115662928B (en) * | 2022-11-16 | 2023-08-29 | 杭州盾源聚芯半导体科技有限公司 | Silicon boat for reducing silicon wafer damage |
| CN116277917A (en) * | 2023-03-14 | 2023-06-23 | 苏州高芯众科半导体有限公司 | Equipment cleaning process |
| CN116277917B (en) * | 2023-03-14 | 2024-01-26 | 苏州高芯众科半导体有限公司 | Equipment cleaning process |
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