CN114420767A - Preparation method of solar cell and solar cell - Google Patents
Preparation method of solar cell and solar cell Download PDFInfo
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- CN114420767A CN114420767A CN202011085099.1A CN202011085099A CN114420767A CN 114420767 A CN114420767 A CN 114420767A CN 202011085099 A CN202011085099 A CN 202011085099A CN 114420767 A CN114420767 A CN 114420767A
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 37
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application provides a preparation method of a solar cell and the solar cell, wherein the preparation method comprises the steps of performing surface treatment on a silicon substrate and performing front diffusion; sequentially preparing a tunneling layer and an amorphous silicon layer on the back surface of the silicon substrate; then carrying out winding plating removal, cleaning and removing the winding plated amorphous silicon, and reserving a BSG layer on the front surface of the silicon substrate; and (4) carrying out surface cleaning after high-temperature annealing, removing the BSG layer, and then sequentially carrying out film coating and metallization to obtain the corresponding solar cell. According to the preparation method, the winding plating removal cleaning is carried out before the high-temperature annealing, the amorphous silicon layer is not subjected to high-temperature treatment, and the winding plated amorphous silicon is easy to remove; and the BSG layer is reserved to be cleaned after high-temperature annealing, so that the damage of the diffusion layer is effectively avoided, and the abnormity of a production line is reduced.
Description
Technical Field
The invention relates to the technical field of photovoltaic power generation, in particular to a solar cell and a preparation method thereof.
Background
In recent years, the demand of photovoltaic markets at home and abroad for high-efficiency solar cells is continuously increased, and numerous manufacturers in the industry are also drawing attention on research and development of high-efficiency cells. The TOPCon (Tunnel Oxide Passivated Contact) battery can improve the surface passivation performance of the battery by preparing an ultrathin Tunnel Oxide layer and a doped polycrystalline silicon layer on the surface of the battery, greatly reduce the metal Contact composite current and effectively improve the open-circuit voltage and the short-circuit current of the battery.
In the preparation process of the TOPCon battery, the front boron diffusion is firstly carried out on the corresponding silicon wafer, then an extremely thin silicon oxide layer is generated by oxidizing the back surface of the silicon wafer, and then a layer of phosphorus-doped amorphous silicon film is prepared by deposition on the surface of the silicon oxide layer. The amorphous silicon thin film is converted into a doped polycrystalline silicon film layer through a subsequent annealing process, and passivation performance is activated. At present, the mass production equipment for doping the polycrystalline silicon film layer is difficult to realize ideal single-side film coating, and the edge area of the front side of the silicon wafer usually generates a winding-coated polycrystalline silicon film layer with the width of about 0.1-5 cm. Because the winding plating polysilicon film layer is not uniform and becomes more compact through high-temperature annealing treatment, the winding plating is difficult to remove. In the art, a method for preparing a TOPCon cell is disclosed, in which a back phosphorus-doped polysilicon film layer is formed by cleaning and removing amorphous silicon and BSG on the front side of a spin-on film, and then annealing. In the subsequent process of the silicon wafer in the scheme, the front surface of the silicon wafer lacks BSG as a protective layer, and additional pollution and damage can be generated.
In view of the above, it is necessary to provide a novel method for manufacturing a solar cell and a solar cell.
Disclosure of Invention
The application aims to provide a solar cell and a preparation method thereof, which can better clean and remove amorphous silicon wound and plated on the front surface of a silicon substrate, avoid abnormal damage and improve the yield.
In order to achieve the above object, the present application provides a method for manufacturing a solar cell, which mainly includes:
carrying out surface treatment on the silicon substrate;
front diffusion, forming a diffusion layer and a BSG layer on the front surface of the silicon substrate;
sequentially preparing a tunneling layer and an amorphous silicon layer on the back surface of the silicon substrate;
removing the winding plating, cleaning and removing the amorphous silicon of the winding plating, and reserving a BSG layer on the front surface of the silicon substrate;
annealing at high temperature;
cleaning the surface, and removing the BSG layer;
and sequentially carrying out film plating and metallization.
As a further improvement of the embodiment of the present application, the amorphous silicon layer is prepared by performing in-situ doping deposition by using an LPCVD or PECVD method, and phosphorus element doping is performed while the amorphous silicon layer is deposited.
As a further improvement of the embodiment of the present application, the preparation method further includes preparing a mask layer on the amorphous silicon layer on the back surface of the silicon substrate, and then performing the despun.
As a further improvement of the embodiment of the application, the preparation of the mask layer comprises generating a layer of SiO on the amorphous silicon layer on the back surface of the silicon substrate by adopting a chemical oxidation or thermal oxidation or ozone oxidation methodxFilm of controlling the SiOxThe thickness of the film is 1 to 100 nm.
As a further improvement of the embodiment of the application, the step of "decoiling and plating" refers to cleaning the silicon substrate by using an alkali solution or an acid solution, wherein the concentration of the alkali solution is set to be 1-10%, and the temperature is set to be 30-90 ℃; the acid solution is HF and HNO3Mixing the solution, wherein the concentration ratio of the two solutions is HF: HNO3The setting is 1: 20-1: 200.
as a further improvement of the embodiment of the application, the preparation method further comprises back junction removal after front diffusion, wherein the back junction removal step comprises the steps of firstly cleaning the back surface of the silicon substrate by adopting an HF solution with the mass concentration of 5-20%; then HF and HNO are adopted3And etching the back surface of the silicon substrate by using the mixed solution, or etching the back surface of the silicon substrate by using KOH, NaOH or TMAH solution.
As a further improvement of the embodiment of the present application, the surface treatment step includes firstly performing double-sided alkaline texturing on the silicon substrate by using an aqueous solution of KOH, NaOH or TMAH, and controlling the pyramid height of the surface of the silicon substrate to be 1-3 μm.
As a further improvement of the embodiment of the application, the front diffusion step controls the sheet resistance of a diffusion layer for boron doping on the front surface of the silicon substrate to be 80-150 ohm/sq, and the thickness of the BSG layer is 50-200 nm.
As a further improvement of the embodiment of the application, the temperature of the high-temperature annealing step is set to be 850-950 ℃, and the time is set to be 10-100 min.
As a further improvement to the examples of this application, the "surface cleaning" step comprises the sequential use of KOH and H2O2The silicon substrate is cleaned by the mixed solution, the first HF solution, the HF and HCl mixed solution and the second HF solution, wherein the concentration of the first HF solution is greater than that of the second HF solution.
As a further improvement of the embodiment of the application, the coating comprises the sequential deposition of Al on the front surface of the silicon substrate2O3Film or SiNxA film, and SiN is deposited on the back surface of the silicon substratexAnd (3) a membrane.
The application also provides a solar cell prepared by the preparation method.
The beneficial effect of this application is: according to the preparation method of the solar cell, the winding plating removal cleaning is carried out before the high-temperature annealing, the amorphous silicon layer is not processed at high temperature and is converted into compact polycrystalline silicon, and the winding plated amorphous silicon is easy to clean and remove; and the BSG layer formed by front diffusion is reserved to be cleaned after high-temperature annealing, so that the silicon substrate is effectively prevented from being polluted and the diffusion layer is effectively prevented from being damaged, the abnormity of a production line is reduced, and the yield is improved.
Drawings
FIG. 1 is a schematic structural diagram of a solar cell of the present application;
FIG. 2 is a schematic main flow chart of a method for manufacturing a solar cell according to the present application;
fig. 3 is a schematic structural diagram of the solar cell according to the present application when the amorphous silicon layer is completed.
100-solar cell; 1-a silicon substrate; 11-a diffusion layer; 12-BSG layer; 2-a tunneling layer; 3-doping a polysilicon layer; 3' -amorphous silicon layer; 4-front surface film; 5-back surface film; 6-front electrode; 7-back electrode.
Detailed Description
The present application will be described in detail below with reference to embodiments shown in the drawings. The present invention is not limited to the above embodiments, and structural, methodological, or functional changes made by one of ordinary skill in the art according to the present embodiments are included in the scope of the present invention.
Referring to fig. 1, a solar cell 100 provided in the present application includes a silicon substrate 1, a tunneling layer 2 disposed on a back surface of the silicon substrate 1, and a doped polysilicon layer 3. The silicon substrate 1 is an N-type monocrystalline silicon wafer; the tunneling layer is set to be SiO2Film layer or SiOxNyThe thickness of the film layer is set to be 1-3 nm; the doped polysilicon layer 3 is provided as a phosphorus doped polysilicon layer.
The solar cell 100 further comprises a front surface film 4 arranged on the front surface of the silicon substrate 1, a back surface film 5 arranged on the back surface of the silicon substrate 1, and a front surface electrode 6 and a back surface electrode 7 respectively arranged on two sides of the silicon substrate 1. A diffusion layer 11 doped with boron is formed on the front surface of the silicon substrate 1, and the front surface electrode 6 penetrates through the front surface film 4 and is in contact with the diffusion layer 11; the back electrode 7 penetrates the back surface film 5 and is in contact with the doped polysilicon layer 3.
With reference to fig. 2 and fig. 3, the present application further provides a method for manufacturing the solar cell 100, including:
performing surface treatment on the silicon substrate 1;
performing front surface diffusion, forming a boron-doped diffusion layer 11 and a BSG layer 12 on the front surface of the silicon substrate 1, controlling the sheet resistance of the diffusion layer 11 to be 80-150 ohm/sq, and enabling the thickness of the BSG layer 12 to be 50-200 nm;
sequentially preparing a tunneling layer 2 and an amorphous silicon layer 3' on the back of a silicon substrate 1;
preparing a mask layer on the amorphous silicon layer 3' on the back surface of the silicon substrate 1;
removing the winding plating, cleaning and removing the amorphous silicon of the winding plating, and reserving the BSG layer 12 on the front surface of the silicon substrate 1;
annealing at high temperature to convert the amorphous silicon layer 3' into a doped polycrystalline silicon layer 3, controlling the annealing temperature to be 850-950 ℃ and setting the time to be 10-100 min;
cleaning the surface, and removing the BSG layer 12 and the mask layer;
the solar cell 100 is obtained by sequentially performing plating and metallization.
Specifically, the surface treatment step comprises the steps of firstly carrying out double-sided alkaline texturing on the silicon substrate 1 by using KOH or NaOH or TMAH aqueous solution, and controlling the pyramid height on the surface of the silicon substrate 1 to be 1-3 μm. The concentration of the aqueous solution of KOH, NaOH or TMAH is usually controlled to be 3-15%, the temperature is set to be 50-90 ℃, and about 1-10% of texturing additives are often added in the actual production to improve the texture quality of the silicon substrate 1.
Here, the tunneling layer 2 is provided as SiO2The film layer can be prepared by chemical oxidation or thermal oxidation or ozone oxidation. The amorphous silicon layer 3 is prepared by in-situ doping deposition by an LPCVD or PECVD method, that is, the doping of phosphorus element is completed while the amorphous silicon layer 3 is deposited and grown.
The mask layer is used for protecting the amorphous silicon layer 3' on the back surface of the silicon substrate 1 from corrosion in the subsequent de-wrap plating process. The preparation of the mask layer comprises generating a layer of SiO on the amorphous silicon layer 3' on the back of the silicon substrate 1 by adopting a chemical oxidation or thermal oxidation or ozone oxidation methodxFilm of controlling the SiOxThe thickness of the film is 1 to 100 nm. Here, the SiOxThe film is prepared by adopting an ozone oxidation method, specifically, ozone gas with a given concentration (flow rate) is directly sprayed to the back surface of the silicon substrate 1, so that the surface of the amorphous silicon layer 3' on the back surface of the silicon substrate 1 is oxidized to obtain SiOxAnd (3) a membrane. The method can better avoid the front side of the silicon substrate 1 from being oxidized to generate SiOxAnd the film is beneficial to cleaning and removing the amorphous silicon plated around.
The step of 'unwinding plating' is to clean the front side of the silicon substrate 1 by adopting an alkali solution, wherein the alkali solution is an aqueous solution of KOH or NaOH or TMAH, the concentration of the aqueous solution is set to be 1-10%, and the temperature is set to be 30-90 ℃. Here, the silicon substrate 1 is cleaned by using chain type cleaning equipment, the front surface of the silicon substrate 1 is kept to flow downwards through a reaction tank containing the alkali solution so as to realize the cleaning of the winding plating, and a layer of water film is usually arranged on the back surface of the silicon substrate 1 so as to better protect the amorphous silicon layer 3' on the back surface of the silicon substrate 1 from being corroded. The step of 'unwinding plating' can also be realized by adopting a groove type alkaline solution etching method, namely, the silicon substrate 1 is placed in a reaction groove containing alkaline solution for etching reaction.
In other embodiments of the present application, the "decoiling" step may also employ an acid solution to clean the front surface of the silicon substrate 1, the acid solution being HF and HNO3Mixing the solution, wherein the concentration ratio of the two solutions is HF: HNO3The setting is 1: 20-1: 200. HNO3The concentration of (2) is far greater than that of HF, so that the cleaning rate is more effectively controlled, and excessive corrosion of the acid solution to the BSG layer 12 in the front non-winding plating area is avoided.
The preparation method also comprises the step of back junction removal after the front diffusion, wherein the step of back junction removal comprises the step of cleaning the back surface of the silicon substrate 1 by adopting an HF solution with the mass concentration of 5-20%; then HF and HNO are adopted3And etching the back surface of the silicon substrate 1 by using the mixed solution, or etching the back surface of the silicon substrate 1 by using KOH, NaOH or TMAH solution. That is, before the preparation of the tunneling layer 2, the back surface of the silicon substrate 1 is polished or textured again, and kept clean.
The step of surface cleaning comprises sequentially adopting KOH and H2O2The silicon substrate is cleaned by the mixed solution, the first HF solution, the HF and HCl mixed solution and the second HF solution, wherein the concentration of the first HF solution is greater than that of the second HF solution. By adopting the surface cleaning method, the BSG layer 12 and the mask layer can be more effectively removed, and possible dirt and impurity ions remained on the surface of the silicon substrate 1 can be cleaned and removed.
The coating is to respectively deposit and prepare a front surface film 4 and a back surface film 5 on the two side surfaces of the silicon substrate 1, wherein the front surface film 4 comprises Al deposited in sequence2O3Film or SiNxA film; the back surface film 5 is set to SiNxAnd (3) a membrane. The metallization is to screen print the given conductive pasteAnd printing the front surface film 4 and the back surface film 5 in a brushing mode to obtain corresponding electrode patterns, and sintering at high temperature to obtain a front electrode 6 and a back electrode 7. The thickness and the film layer structure of the front surface film 4 and the back surface film 5 can be adjusted and controlled through the flow rate of reaction gas, the deposition temperature and the like; the specific process parameters of the screen printing and sintering can also be adjusted according to the performance of the conductive paste and the requirements of the battery, and are not described in detail herein.
In summary, according to the preparation method of the solar cell 100, the winding-plating-removing cleaning is performed before the high-temperature annealing, the amorphous silicon layer 3' is not subjected to the high-temperature treatment and is converted into the more compact doped polycrystalline silicon layer 3, and the winding-plated amorphous silicon is easier to clean and remove; and the BSG layer 12 formed by front diffusion is reserved to be cleaned after high-temperature annealing, so that the silicon substrate 1 is effectively prevented from being polluted and the diffusion layer is effectively prevented from being damaged, the abnormality of a production line is reduced, and the yield is improved.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above list of details is only for the concrete description of the feasible embodiments of the present application, they are not intended to limit the scope of the present application, and all equivalent embodiments or modifications that do not depart from the technical spirit of the present application are intended to be included within the scope of the present application.
Claims (12)
1. A method for manufacturing a solar cell, comprising:
carrying out surface treatment on the silicon substrate;
front diffusion, forming a diffusion layer and a BSG layer on the front surface of the silicon substrate;
sequentially preparing a tunneling layer and an amorphous silicon layer on the back surface of the silicon substrate;
removing the winding plating, cleaning and removing the amorphous silicon of the winding plating, and reserving a BSG layer on the front surface of the silicon substrate;
annealing at high temperature;
cleaning the surface, and removing the BSG layer;
and sequentially carrying out film plating and metallization.
2. The method of claim 1, wherein: the amorphous silicon layer is prepared by carrying out in-situ doping deposition by adopting an LPCVD (low pressure chemical vapor deposition) or PECVD (plasma enhanced chemical vapor deposition) method, and phosphorus element doping is carried out while the amorphous silicon layer is deposited.
3. The method of claim 1, wherein: the preparation method also comprises the steps of preparing a mask layer on the amorphous silicon layer on the back surface of the silicon substrate and then performing winding plating.
4. The production method according to claim 3, characterized in that: the preparation of the mask layer comprises generating a layer of SiO on the amorphous silicon layer on the back of the silicon substrate by adopting a chemical oxidation or thermal oxidation or ozone oxidation methodxFilm of controlling the SiOxThe thickness of the film is 1 to 100 nm.
5. The production method according to any one of claims 1 to 4, characterized in that: the step of 'unwinding plating' is to clean the silicon substrate by adopting an alkali solution or an acid solution, wherein the concentration of the alkali solution is set to be 1-10%, and the temperature is set to be 30-90 ℃; the acid solution is HF and HNO3Mixing the solution, wherein the concentration ratio of the two solutions is HF: HNO3The setting is 1: 20-1: 200.
6. the method of claim 1, wherein: the preparation method also comprises the step of back knot removal after front diffusion, wherein the step of back knot removal comprises the step of cleaning the back surface of the silicon substrate by adopting an HF solution with the mass concentration of 5-20%; then HF and HNO are adopted3Etching the back surface of the silicon substrate by using a mixed solution, or etching the back surface of the silicon substrate by using a KOH or NaOH or TMAH solutionAnd (5) line etching.
7. The method of claim 1, wherein: the surface treatment step comprises the steps of firstly carrying out double-sided alkaline texturing on a silicon substrate by using KOH or NaOH or TMAH aqueous solution, and controlling the pyramid height of the surface of the silicon substrate to be 1-3 mu m.
8. The method of claim 1, wherein: the front side diffusion step controls the sheet resistance of a diffusion layer for doping boron on the front side of the silicon substrate to be 80-150 ohm/sq, and the thickness of the BSG layer is 50-200 nm.
9. The method of claim 1, wherein: the temperature of the high-temperature annealing step is set to 850-950 ℃, and the time is set to 10-100 min.
10. The method of claim 1, wherein: the step of surface cleaning comprises sequentially adopting KOH and H2O2The silicon substrate is cleaned by the mixed solution, the first HF solution, the HF and HCl mixed solution and the second HF solution, wherein the concentration of the first HF solution is greater than that of the second HF solution.
11. The method of claim 1, wherein: the coating comprises sequentially depositing Al on the front surface of the silicon substrate2O3Film or SiNxA film, and SiN is deposited on the back surface of the silicon substratexAnd (3) a membrane.
12. A solar cell, characterized by: the solar cell is manufactured by the manufacturing method according to any one of claims 1 to 11.
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| CN202011085099.1A CN114420767A (en) | 2020-10-12 | 2020-10-12 | Preparation method of solar cell and solar cell |
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| CN202011085099.1A CN114420767A (en) | 2020-10-12 | 2020-10-12 | Preparation method of solar cell and solar cell |
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| CN109148647A (en) * | 2018-09-07 | 2019-01-04 | 江苏顺风光电科技有限公司 | A kind of preparation method of TOPCon structure battery |
| CN111668345A (en) * | 2020-06-29 | 2020-09-15 | 浙江晶科能源有限公司 | Solar cell and preparation method thereof |
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