CN204361062U

CN204361062U - A kind of siliceous boat of silicon chip

Info

Publication number: CN204361062U
Application number: CN201420771384.2U
Authority: CN
Inventors: 杨军; 顾永明
Original assignee: Hangzhou Dahe Thermo Magnetics Co Ltd
Current assignee: Hangzhou Dunyuan Poly Core Semiconductor Technology Co ltd
Priority date: 2014-12-09
Filing date: 2014-12-09
Publication date: 2015-05-27
Anticipated expiration: 2024-12-09

Abstract

The utility model discloses a kind of siliceous boat of silicon chip, comprise flange, the silicon rack of it plate and support silicon chip, multiple equidistant and ditch tooth be parallel to each other is provided with inside silicon rack, the utility model adopts high purity polycrystalline silicon to make silicon wafer boat, solve quartz boat fusing point low, under high temperature, easily distortion and silicon carbide boat at high temperature easily dissociate foreign ion and pollute silicon chip and deficiency with high costs, especially for large-sized wafer heat, the high-melting-point of siliceous boat, high-purity characteristic and the thermal coefficient of expansion consistent with silicon chip, effectively can avoid silicon warp, improve silicon chip surface staggered floor, thus improve the qualification rate of silicon chip.

Description

A kind of siliceous boat of silicon chip

Technical field

The utility model relates to a kind of silicon slice bearing boat, refer more particularly to the manufacture of a kind of HIGH-PURITY SILICON material, high temperature can be prevented under distortion and reduce the siliceous boat of the silicon chip that not pure material at high temperature pollutes.

Background technology

The heat treatment of silicon chip batch is an important production technology, Technology for Heating Processing comprises reacting gas is passed into heat treatment furnace, as the gases used mode by vapour deposition is deposited on silicon chip by the mode by CVD, and silicon chip is placed in silicon wafer boat sends in stove to heat-treat, general silicon wafer boat adopts high purity quartz or carborundum to make, if Authorization Notice No. is CN202513132U, name is called a kind of Chinese utility model patent of quartz boat, disclose a kind of quartz boat, because quartz boat is used in reacting furnace for a long time, along with the constant temperature of reaction rises, in-furnace temperature often exceeds 1000 DEG C, even reach 1250 DEG C, quartz at such high temperatures, long-time use may will be out of shape softening, the silicon chip shelved wherein is caused to produce micro-strain, and quartz boat is different from the material of silicon chip, coefficient of thermal expansion and contraction is obviously inconsistent, cold spot is there will be when heating up and lower the temperature, cause the mistake of collapsing of lattice, formation crystal grain misplaces, above factor all can affect Si wafer quality, simultaneously, concerning carborundum, along with die size increases, the Advanced Integrated Circuits harsher concerning quality requirement, carborundum in high-temperature process also can be counted as a kind of material pure not, and the carborundum of CVD is very expensive as raw material, silicon carbide coating after process engineering neither be effective fully, therefore, common high purity quartz boat or silicon carbide boat, cannot meet the need of production of the high-purity silicon chip of large scale.

Utility model content

The utility model mainly to solve under the quartz boat fusing point low and high temperature in wafer heat process easily temperature distortion and the pure not and technical problem of material expensive of silicon carbide boat; Provide the manufacture of a kind of HIGH-PURITY SILICON material, high temperature can be prevented under distortion and reduce the siliceous boat of the silicon chip that not pure material at high temperature pollutes.

In order to solve the technical problem of above-mentioned existence, the utility model mainly adopts following technical proposals:

The siliceous boat of a kind of silicon chip of the present utility model, for the supporting and heat insulation in silicon chip batch heat treatment process, described siliceous boat comprises the flange and sky plate that be arranged in parallel, some silicon racks for silicon chip described in support are provided with between described flange and sky plate, multiple equidistant and ditch tooth be parallel to each other is provided with inside described silicon rack, HIGH-PURITY SILICON is adopted to make silicon wafer boat, solve quartz boat fusing point low, under long term high temperature, easily distortion and silicon carbide boat at high temperature easily dissociate foreign ion and pollute silicon chip and deficiency with high costs, especially for the large-sized wafer heat of 450mm, the high-melting-point of siliceous boat, high-purity characteristic and the thermal coefficient of expansion consistent with silicon chip, effectively can avoid silicon warp, improve silicon chip surface staggered floor, thus improve the qualification rate of silicon chip.

As preferably, described siliceous boat material is high purity polycrystalline silicon, adopt the polysilicon of Grown by CZ Method, very pure, the high-purity with 13 9 can be reached, and there is higher fusing point and the thermal coefficient of expansion identical with silicon chip, the siliceous boat made can not produce distortion completely in high-temperature process, the foreign ion and pollute silicon chip of also can not overflowing.

As preferably, described silicon rack cross section is triangular in shape, and its apex is towards inner side, and triangle base toward the outer side.

As preferably, described silicon rack quantity is four, comprise two upper ditch rods and two hyposulculus rods, upper ditch rod and hyposulculus excellent be all located at silicon chip corner and support silicon chip, corresponding ditch tooth on four silicon racks forms the silicon chip storage tank that a side opening is large and opposite side opening is little, and silicon chip can insert from the side that opening is large, and silicon chip plugs convenient and swift, accommodating fail safe is good, and vapour deposition is even.

As preferably, described flange structure in the form of a ring, flange is provided with and matches with described silicon rack bottom and can the lower hole clipping of accommodating silicon rack bottom, described sky plate structure in the form of a ring, sky plate is provided with and matches with silicon rack upper end and can the upper hole clipping of accommodating silicon rack upper end, described upper hole clipping and lower hole clipping one_to_one corresponding, silicon rack embeds upper and lower hole clipping and perpendicular to the inner surface of flange, silicon rack can vertically embed in hole clipping, makes the installation of siliceous boat more convenient, connects more firm.

As preferably, the plane of described ditch tooth is skewed, ditch tooth tip is upwards micro-sticks up, its angle of inclination is 0.5 ° ~ 2 °, slightly the ditch tooth design of updip makes silicon chip be point cantact with contacting of ditch tooth, contact area is little, efficiently solves the back existed in wafer heat process and scratches, also reduce the heat trnasfer of silicon chip.

The beneficial effects of the utility model are: adopt HIGH-PURITY SILICON to make silicon wafer boat, to solve under quartz boat fusing point low and high temperature easily distortion and silicon carbide boat at high temperature easily to dissociate foreign ion and pollute silicon chip and deficiency with high costs, especially for large-sized wafer heat, the high-melting-point of siliceous boat, high-purity characteristic and the thermal coefficient of expansion consistent with silicon chip, can effectively avoid silicon warp, improve silicon chip surface staggered floor, thus improve the qualification rate of silicon chip.

Accompanying drawing explanation

Fig. 1 is a kind of structural representation of the present utility model.

Fig. 2 is the exploded perspective view of Fig. 1 structure.

Fig. 3 is the silicon rack schematic diagram in Fig. 1 structure.

1. flanges in figure, 11. times hole clippings, 2. day plate, hole clipping on 21., 3. silicon rack, ditch rod on 31., 32. hyposulculus rods, 4. ditch tooth.

Embodiment

Below by embodiment, and by reference to the accompanying drawings, the technical solution of the utility model is described in further detail.

Embodiment 1: the siliceous boat of a kind of silicon chip of the present embodiment 1, for the supporting and heat insulation in 450mm silicon chip batch heat treatment process, siliceous boat is manufactured by high purity polycrystalline silicon, polysilicon purity reaches 13 9, siliceous boat comprises the flange 1 and sky plate 2 that be arranged in parallel, four silicon racks 3 for support silicon chip are installed between flange and sky plate, silicon rack cross section is triangular in shape, its apex is towards inner side, triangle base toward the outer side, multiple equidistant and ditch tooth 4 be parallel to each other is processed with inside silicon rack, flange and sky plate structure all in the form of a ring, flange is designed with and matches with silicon rack bottom and can the lower hole clipping 11 of accommodating silicon rack bottom, it plate is designed with and matches with silicon rack upper end and can the upper hole clipping 21 of accommodating silicon rack upper end, upper hole clipping and lower hole clipping one_to_one corresponding, silicon rack comprises two upper ditch rods 31 and two hyposulculus rods 32, upper ditch rod and hyposulculus rod are distributed in the corner of silicon chip and vertical embedding upper and lower hole clipping accordingly, corresponding ditch tooth on four silicon racks forms the silicon chip storage tank that a side opening is large and opposite side opening is little, 450mm silicon chip can insert in storage tank quickly and easily.

During siliceous boat assembling, first upper hyposulculus rod is embedded in the lower hole clipping in flange, adjust perpendicularity and make hyposulculus rod perpendicular to flange inner surface, and then sky plate is embedded in corresponding upper hyposulculus rod also fixing, form the siliceous boat of internal access tooth planar horizontal.

When the heat treatment of 450mm silicon chip batch, first silicon chip is inserted in corresponding ditch tooth from comparatively big uncork, multi-disc silicon chip is arranged in parallel, then the siliceous boat of accommodating multiple silicon chip is sent in heat-treatment furnace, in-furnace temperature can reach 1250 DEG C, now, reacting gas is imported in heat-treatment furnace, gas is just deposited on silicon chip surface by the mode of vapour deposition, complete the Technology for Heating Processing of silicon chip, now, because the fusing point of siliceous boat is high, identical with the thermal coefficient of expansion of silicon chip, also any distortion can not be there is under long-time high temperature, silicon warp and staggered floor can not be caused, also cold spot is there will not be in cooling and temperature-rise period, cause the mistake of collapsing of lattice, formation crystal grain misplaces, the vapour deposition of silicon chip is even, conforming product rate is high.

Embodiment 2: the siliceous boat of a kind of silicon chip of the present embodiment 2, for the supporting and heat insulation in 450mm silicon chip batch heat treatment process, siliceous boat is manufactured by high purity polycrystalline silicon, comprise flange and sky plate, four silicon racks are installed between flange and sky plate, silicon rack cross section is triangular in shape, its apex is towards inner side, triangle base toward the outer side, multiple equidistant and ditch tooth be parallel to each other is processed with inside silicon rack, ditch tooth plane is skewed, ditch tooth tip is upwards micro-sticks up, its angle of inclination is 1 °, ditch tooth tip supports the 450mm silicon chip of insertion in point cantact mode, effectively prevent the back scuffing that silicon chip exists in heat treatment process, also reduce the heat trnasfer of silicon chip, the other parts of the present embodiment 2 all with the appropriate section of embodiment 1 roughly the same, repeat no more herein.

In description of the present utility model, technical term " on ", D score, " front ", " afterwards ", " interior ", " outward " etc. represent that direction or position relationship are based on direction shown in the drawings or position relationship, be only for convenience of description with understand the technical solution of the utility model, more than illustrate and not restriction has been done to the utility model, the utility model is also not limited only to the citing of above-mentioned explanation, the composition of the main silica-based material that those skilled in the art make in essential scope of the present utility model and the size of silicon rack, the changes such as shape, remodeling, increase or replace, all should be considered as protection range of the present utility model.

Claims

1. the siliceous boat of a silicon chip, for the supporting of silicon chip in heat treatment process and heat insulation, it is characterized in that: described siliceous boat comprises the flange (1) and sky plate (2) that be arranged in parallel, be provided with some silicon racks (3) for silicon chip described in support between described flange and sky plate, inside described silicon rack, be provided with multiple equidistant and ditch tooth (4) be parallel to each other.

2. the siliceous boat of a kind of silicon chip according to claim 1, is characterized in that: described siliceous boat material is high purity polycrystalline silicon.

3. the siliceous boat of a kind of silicon chip according to claim 1, is characterized in that: described silicon rack (3) cross section is triangular in shape, and its apex is towards inner side, and triangle base toward the outer side.

4. the siliceous boat of a kind of silicon chip according to claim 1 or 2 or 3, it is characterized in that: described silicon rack (3) quantity is four, comprise two upper ditch rods (31) and two hyposulculus rods (32), upper ditch rod and hyposulculus rod are all located at the corner of silicon chip and support silicon chip, and the corresponding ditch tooth (4) on four silicon racks forms a side opening little silicon chip storage tank of opposite side opening greatly.

5. the siliceous boat of a kind of silicon chip according to claim 1, it is characterized in that: described flange (1) structure in the form of a ring, flange is provided with and matches with described silicon rack (3) bottom and can the lower hole clipping (11) of accommodating silicon rack bottom, described sky plate (2) structure in the form of a ring, it plate is provided with and matches with silicon rack upper end and can the upper hole clipping (21) of accommodating silicon rack upper end, described upper hole clipping and lower hole clipping one_to_one corresponding, silicon rack embeds upper and lower hole clipping and perpendicular to the inner surface of flange.

6. the siliceous boat of a kind of silicon chip according to claim 1, is characterized in that: described ditch tooth (4) plane is skewed, and ditch tooth tip is upwards micro-sticks up, and its angle of inclination is 0.5 ° ~ 2 °.