CN112289908A - 一种mini-LED芯片巨量转移的方法 - Google Patents

一种mini-LED芯片巨量转移的方法 Download PDF

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CN112289908A
CN112289908A CN202010950414.6A CN202010950414A CN112289908A CN 112289908 A CN112289908 A CN 112289908A CN 202010950414 A CN202010950414 A CN 202010950414A CN 112289908 A CN112289908 A CN 112289908A
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罗雪方
薛水源
瞿澄
李雍
陈文娟
胡玲玲
周良军
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Luohuaxin Display Technology Development Jiangsu Co ltd
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Abstract

本发明提供了一种mini‑LED芯片巨量转移的方法，本发明利用膨胀材料的热膨胀性质顶起粘合膜，实现mini‑LED芯片的转移，其方法简单，且精度较高。进一步的，在回流焊接时，施加激光或加热可以同时进行，此时，凸起部在回流焊接时给予多个mini‑LED芯片以压力，回流焊接无需额外的施加压力。

Description

一种mini-LED芯片巨量转移的方法
技术领域
本发明涉及半导体器件封装制造领域，具体涉及一种mini-LED芯片巨量转移的方法。
背景技术
Mini/microLED相比较传统LED在相同面积上拥有更多的芯片，并且结构简单，具有亮度高、能耗低、响应速度快、对比度高等优点。Mini/microLED芯片尺寸一般在μm级，在代替传统的LED显示设备时需要大量的芯片。因而Mini/microLED芯片的巨量转移成为一个技术难点，一次转移往往需要移动几万至几十万颗LED芯片，其转移过程涉及芯片的吸取（芯片与蓝膜或基板分离）、选择、放置等操作，必须保证芯片能大量转移，同时芯片之间的间距精度控制在合理的范围内。常用的做法是在附着芯片的基板的另一面施加激光或者加热，使芯片与膜分离，但这种方法转移后的芯片精度较低，本发明通过改进基板结构来提高芯片精度。
发明内容
基于解决上述问题，本发明提供了一种mini-LED芯片巨量转移的方法，其依次包括以下步骤：
（1）提供一转移用的基板；
（2）在所述基板的下表面上刻蚀出多个盲孔；
（3）在盲孔中填充膨胀材料；
（4）在所述基板的下表面贴附一粘合膜；
（5）利用该粘合膜粘附多个mini-LED芯片，该多个mini-LED芯片的位置与所述多个盲孔一一对应，所述多个mini-LED芯片的电极上设置焊料；
（6）准备一电路板，将粘附有多个mini-LED芯片的基板压合至所述电路板上，使得所述多个mini-LED芯片接合至电路板上，并进行回流焊接；
（7）通过所述基板的上表面施加激光或加热，使得盲孔内的膨胀材料受到激发而膨胀，以至于从所述下表面突出，且顶起所述粘合膜形成凸起部；该凸起部使得多个mini-LED芯片与粘合膜分离，转移到电路板上。
进一步的，所述膨胀材料为光致膨胀材料或者热膨胀材料。
进一步的，步骤（6）中的回流焊接与步骤（7）中的施加激光或加热同时进行，此时，凸起部在回流焊接时给予多个mini-LED芯片以压力，回流焊接无需额外的施加压力。
进一步的，所述膨胀材料是可逆材料，其在撤去激光或者加热器之后，体积缩小至原来大小。
进一步的，所述盲孔的深度为基板厚度的1/2-2/3。
进一步的，所述电路板上具有电路层，所述电路层电连接至所述多个mini-LED芯片。
本发明的有益效果在于利用膨胀材料的热膨胀性质顶起粘合膜，实现mini-LED芯片的转移，其方法简单，且精度较高。进一步的，在回流焊接时，施加激光或加热可以同时进行，此时，凸起部在回流焊接时给予多个mini-LED芯片以压力，回流焊接无需额外的施加压力。
附图说明
图1-6为本发明的本发明的mini-LED芯片巨量转移的方法的示意图；其中，图5为图4施加激光或热后的放大示意图。
图7为热膨胀材料恢复常温时重复利用示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
下面参照图1-6来具体描述上述mini-LED芯片巨量转移的方法。
首先准备一转移用的基板1，该基板1可以是硅基板或者玻璃基板或者陶瓷基板。所述基板1的尺寸可以与后续键合的电路板尺寸一致，其厚度可以是2mm或者更大，如图1所示。
参见图2，在所述基板1的下表面上刻蚀出阵列排布的多个盲孔2，该盲孔2一定是未贯穿所述基板1的，且其深度可以为基板厚度的1/2-2/3。该些盲孔2的孔径小于需要接合的mini-LED芯片的尺寸。
然后参见图3，在上述盲孔2中填充膨胀材料3，所述膨胀材料3为光致膨胀材料或者热膨胀材料，其中的光致膨胀材料可以是三苯基甲烷等可逆材料，而热膨胀材料可以是记忆合金或者膨胀塑料。在选择光致膨胀材料时，其基板1应当为透明材质，例如玻璃基板。
其中，所述膨胀材料3应当填充满所述盲孔2，且与基板1的开孔面齐平。
参见图4，在基板1的具有盲孔2的下表面上贴附一粘合膜4，所述粘合膜4平整的覆盖该膨胀材料3上。然后，利用粘合膜4粘附多个mini-LED芯片5，所述多个mini-LED芯片5与所述多个盲孔2的位置一一对应。所述多个mini-LED芯片5的电极上可设置焊料。
接着，准备一电路板6，该电路板6上具有电路层7，该电路层7上可以设置焊料。将粘附有mini-LED芯片5的基板1压合至所述电路板6的电路层7上，使得所述多个mini-LED芯片5对准接合至电路层7上，并进行回流焊接。
然后，通过所述基板1的上表面施加激光或加热，使得盲孔2内的膨胀材料3受到激发而膨胀，膨胀材料3体积膨胀而变成激发状态下的膨胀材料3a，激发状态下的膨胀材料3a突出于所述基板1的下表面，并对所述离型层4产生压力。参见图5，在压力的作用下，离型层4被激发状态下的膨胀材料3a顶起形成凸起部4a，该凸起部4a使得mini-LED芯片5与粘合膜4分离，转移到电路板6上。
作为优选的，施加激光或加热与回流焊接可以同时进行，此时，凸起部4a在回流焊接时可以给予多个mini-LED芯片5以压力，回流焊接无需额外的施加压力。
至此，多个mini-LED芯片转移完成，形成具有多个mini-LED芯片的电路板结构，参见图6。并且该膨胀材料3以及基板1可以重复利用，具体参见图7，撤去激光或者加热器之后，盲孔2内的膨胀材料恢复至常温，其体积又恢复至原来大小，具体参见图7的（a）。然后，可以去除粘合膜4，参见图7的（b），最后贴附新的粘合膜，参见图7的（c）。
综上，本发明的mini-LED芯片巨量转移的方法，其依次包括以下步骤：
（1）提供一转移用的基板；
（2）在所述基板的下表面上刻蚀出多个盲孔；
（3）在盲孔中填充膨胀材料；
（4）在所述基板的下表面贴附一粘合膜；
（5）利用该粘合膜粘附多个mini-LED芯片，该多个mini-LED芯片的位置与所述多个盲孔一一对应，所述多个mini-LED芯片的电极上设置焊料；
（6）准备一电路板，将粘附有多个mini-LED芯片的基板压合至所述电路板上，使得所述多个mini-LED芯片接合至电路板上，并进行回流焊接；
（7）通过所述基板的上表面施加激光或加热，使得盲孔内的膨胀材料受到激发而膨胀，以至于从所述下表面突出，且顶起所述粘合膜形成凸起部；该凸起部使得多个mini-LED芯片与粘合膜分离，转移到电路板上。
进一步的，所述膨胀材料为光致膨胀材料或者热膨胀材料。
进一步的，步骤（6）中的回流焊接与步骤（7）中的施加激光或加热同时进行，此时，凸起部在回流焊接时给予多个mini-LED芯片以压力，回流焊接无需额外的施加压力。
进一步的，所述膨胀材料是可逆材料，其在撤去激光或者加热器之后，体积缩小至原来大小。
进一步的，所述盲孔的深度为基板厚度的1/2-2/3。
进一步的，所述电路板上具有电路层，所述电路层电连接至所述多个mini-LED芯片。
本发明利用膨胀材料的热膨胀性质顶起粘合膜，实现mini-LED芯片的转移，其方法简单，且精度较高。进一步的，在回流焊接时，施加激光或加热可以同时进行，此时，凸起部在回流焊接时给予多个mini-LED芯片以压力，回流焊接无需额外的施加压力。
本发明中使用的表述“示例性实施例”、“示例”等不是指同一实施例，而是被提供来着重描述不同的特定特征。然而，上述示例和示例性实施例不排除他们与其他示例的特征相组合来实现。例如，即使在另一示例中未提供特定示例的描述的情况下，除非另有陈述或与其他示例中的描述相反，否则该描述可被理解为与另一示例相关的解释。
本发明中使用的术语仅用于示出示例，而无意限制本发明。除非上下文中另外清楚地指明，否则单数表述包括复数表述。
虽然以上示出并描述了示例实施例，但对本领域技术人员将明显的是，在不脱离由权利要求限定的本发明的范围的情况下，可做出变型和改变。

Claims (6)

1.一种mini-LED芯片巨量转移的方法，其依次包括以下步骤：
（1）提供一转移用的基板；
（2）在所述基板的下表面上刻蚀出多个盲孔；
（3）在盲孔中填充膨胀材料；
（4）在所述基板的下表面贴附一粘合膜；
（5）利用该粘合膜粘附多个mini-LED芯片，该多个mini-LED芯片的位置与所述多个盲孔一一对应，所述多个mini-LED芯片的电极上设置焊料；
（6）准备一电路板，将粘附有多个mini-LED芯片的基板压合至所述电路板上，使得所述多个mini-LED芯片接合至电路板上，并进行回流焊接；
（7）通过所述基板的上表面施加激光或加热，使得盲孔内的膨胀材料受到激发而膨胀，以至于从所述下表面突出，且顶起所述粘合膜形成凸起部；该凸起部使得多个mini-LED芯片与粘合膜分离，转移到电路板上。
2.根据权利要求1所述的mini-LED芯片巨量转移的方法，其特征在于，所述膨胀材料为光致膨胀材料或者热膨胀材料。
3.根据权利要求1所述的mini-LED芯片巨量转移的方法，其特征在于，步骤（6）中的回流焊接与步骤（7）中的施加激光或加热同时进行，此时，凸起部在回流焊接时给予多个mini-LED芯片以压力，回流焊接无需额外的施加压力。
4.根据权利要求1所述的mini-LED芯片巨量转移的方法，其特征在于，所述膨胀材料是可逆材料，其在撤去激光或者加热器之后，体积缩小至原来大小。
5.根据权利要求1所述的mini-LED芯片巨量转移的方法，其特征在于，所述盲孔的深度为基板厚度的1/2-2/3。
6.根据权利要求1所述的mini-LED芯片巨量转移的方法，其特征在于，所述电路板上具有电路层，所述电路层电连接至所述多个mini-LED芯片。
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112786520A (zh) * 2021-04-12 2021-05-11 武汉大学 一种转印头、转印头阵列及微led巨量转移方法
CN113130728A (zh) * 2021-04-13 2021-07-16 东莞市中麒光电技术有限公司 一种led芯片巨量转移方法
CN113611787A (zh) * 2021-08-02 2021-11-05 东莞市中麒光电技术有限公司 芯片转移结构及Micro LED显示模块返修方法
CN114571111A (zh) * 2022-03-24 2022-06-03 安徽大学绿色产业创新研究院 一种Mini/microLED激光维修用智能上料系统
CN115084337A (zh) * 2022-07-21 2022-09-20 罗化芯显示科技开发(江苏)有限公司 一种微型发光二极管芯片的巨量转移方法
CN115207186A (zh) * 2022-09-15 2022-10-18 江西兆驰半导体有限公司 一种Mini-LED芯片及其制备方法
WO2022241626A1 (zh) * 2021-05-17 2022-11-24 京东方科技集团股份有限公司 一种载板以及转移装置
WO2023015569A1 (zh) * 2021-08-13 2023-02-16 重庆康佳光电技术研究院有限公司 微型元件结构及其制备方法、led芯片的转移方法
CN116314488A (zh) * 2023-03-30 2023-06-23 惠科股份有限公司 芯片转移方法及显示面板
CN116936714A (zh) * 2023-09-18 2023-10-24 罗化芯显示科技开发(江苏)有限公司 一种微型发光单元显示面板及其制造方法
CN117832343A (zh) * 2024-03-04 2024-04-05 惠科股份有限公司 巨量转移组件、显示面板及显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110574174A (zh) * 2016-12-13 2019-12-13 香港北大青鸟显示有限公司 使用粘合剂对微结构进行传质
WO2020136764A1 (ja) * 2018-12-26 2020-07-02 日立化成株式会社 電子部品パッケージの製造方法
US20200258870A1 (en) * 2017-08-01 2020-08-13 Innolux Corporation Methods for manufacturing a display device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110574174A (zh) * 2016-12-13 2019-12-13 香港北大青鸟显示有限公司 使用粘合剂对微结构进行传质
US20200258870A1 (en) * 2017-08-01 2020-08-13 Innolux Corporation Methods for manufacturing a display device
WO2020136764A1 (ja) * 2018-12-26 2020-07-02 日立化成株式会社 電子部品パッケージの製造方法

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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CN113130728A (zh) * 2021-04-13 2021-07-16 东莞市中麒光电技术有限公司 一种led芯片巨量转移方法
WO2022241626A1 (zh) * 2021-05-17 2022-11-24 京东方科技集团股份有限公司 一种载板以及转移装置
CN113611787A (zh) * 2021-08-02 2021-11-05 东莞市中麒光电技术有限公司 芯片转移结构及Micro LED显示模块返修方法
CN113611787B (zh) * 2021-08-02 2023-03-14 东莞市中麒光电技术有限公司 芯片转移结构及Micro LED显示模块返修方法
WO2023015569A1 (zh) * 2021-08-13 2023-02-16 重庆康佳光电技术研究院有限公司 微型元件结构及其制备方法、led芯片的转移方法
CN114571111A (zh) * 2022-03-24 2022-06-03 安徽大学绿色产业创新研究院 一种Mini/microLED激光维修用智能上料系统
CN115084337B (zh) * 2022-07-21 2022-11-04 罗化芯显示科技开发(江苏)有限公司 一种微型发光二极管芯片的巨量转移方法
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CN115207186A (zh) * 2022-09-15 2022-10-18 江西兆驰半导体有限公司 一种Mini-LED芯片及其制备方法
CN116314488A (zh) * 2023-03-30 2023-06-23 惠科股份有限公司 芯片转移方法及显示面板
CN116314488B (zh) * 2023-03-30 2024-04-12 惠科股份有限公司 芯片转移方法及显示面板
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