CN112251735A - Thin film deposition rotating disk system - Google Patents
Thin film deposition rotating disk system Download PDFInfo
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- CN112251735A CN112251735A CN202011160763.4A CN202011160763A CN112251735A CN 112251735 A CN112251735 A CN 112251735A CN 202011160763 A CN202011160763 A CN 202011160763A CN 112251735 A CN112251735 A CN 112251735A
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- 238000000427 thin-film deposition Methods 0.000 title claims description 26
- 230000005540 biological transmission Effects 0.000 claims abstract description 53
- 238000009987 spinning Methods 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000008021 deposition Effects 0.000 abstract description 4
- 230000000149 penetrating effect Effects 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 9
- 239000010409 thin film Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a film deposition rotating disc system which comprises a machine table, wherein at least one wafer recess is arranged on the machine table, a disc is arranged in the wafer recess, and a wafer accommodating groove is formed in the disc. The center of the disk is also provided with a wafer lifting device which comprises a top column arranged in a sleeve in a penetrating way. The machine table is also provided with a first gas transmission channel for transmitting gas to the gas transmission through hole of the sleeve, so that the top column in the sleeve is lifted according to the flow of the gas, and the wafer on the wafer accommodating groove is ejected. The machine table is also provided with an exhaust channel, when the height of the top column in the sleeve exceeds the exhaust through hole, gas can be exhausted to the exhaust channel through the exhaust through hole on the sleeve, so that the lifting height of the top column is adjusted, and after the flow rate and the height of the top column are balanced, the mechanical arm can enter and clamp the wafer. The wafer picking and placing device is beneficial to picking and placing wafers by the mechanical arm, effectively meets the requirement of automatic production, and improves the production efficiency.
Description
Technical Field
The present disclosure relates generally to wafer plating, and more particularly to a rotating disk system for thin film deposition.
Background
The semiconductor device is fabricated by photolithography, etching, diffusion and then into the film. In a thin film deposition process, a semiconductor wafer is placed on a wafer carrying system in a vacuum reaction chamber, so that a gas injector horizontally injects a reactive gas onto the wafer, and a physical or chemical reaction caused by heating to a high temperature of more than 500 ℃ is utilized to deposit a thin film on the wafer.
The wafer carrying system includes a large carrying plate, and a plurality of small carrying plates are disposed on the large carrying plate. During deposition, the large susceptor is slowly rotated at a speed of 60rpm or less in order to achieve heating uniformity. In addition, the small carrier plate (also called a disk plate) also rotates relatively, the rotation speed of the small carrier plate depends on the growth rate of the thin film, usually more than 50rpm, and the rotation of the large and small carrier plates can make the wafer achieve the purpose of growing the thin film with uniform thickness.
Currently, as shown in fig. 1, when a thin film is to be grown on a wafer 90, the small susceptor 96 is rotated to drive the wafer 90 to rotate 360 degrees. The rotation mechanism is to guide the air flow to the air duct 92 and then to the two air duct openings 920 for discharging, so as to float the small carrier plate 96 carrying the wafer 90, and the two air duct openings 920 specially designed in tandem can guide the air flow to drive the floating small carrier plate 96 to rotate, and finally the air flow is discharged from the exhaust hole 94. By this mechanism, the wafer 90 can be rotated to uniformly receive the gas from the gas injector 98, so as to achieve the purpose of growing a thin film with uniform thickness.
However, in the design of the current wafer carrying system, there is no gap between the wafer 90 and the small carrying tray 96, so that the robot has no space to go deep into the small carrying tray 96 to pick up the wafer 90, and the production efficiency cannot be effectively improved in response to the requirement of automatic production.
In view of the above, the present disclosure provides a rotating disk system for thin film deposition to overcome the above problems.
Disclosure of Invention
The present disclosure provides a rotating disk system for thin film deposition, which can push a wafer to the outside of a disk only by controlling gas, and is helpful for a robot to pick and place the wafer, so as to effectively improve the production efficiency in response to the requirement of automated production.
To achieve the above objective, the present disclosure provides a rotating disk system for thin film deposition, which includes a machine platform, wherein at least one wafer recess is disposed on the machine platform, a disk is disposed in the wafer recess, and a wafer accommodating groove is disposed on the disk. The wafer lifting device is arranged in the center of the disk in a penetrating way. The machine table is also provided with a first gas transmission channel which is communicated with the space of the wafer recess to transmit gas to the bottom of the wafer lifting device, so that the wafer lifting device can lift according to the flow of the gas. The exhaust channel is arranged on the machine table and communicated with the space of the wafer recess seat, so that gas is exhausted from the exhaust channel to adjust the wafer lifting device.
In this embodiment, the wafer lifting device further includes a sleeve disposed on the wafer recess, and the sleeve has a gas transmission through hole, and at least one exhaust through hole is located at a position of the sleeve near the top, and the exhaust through hole is communicated with the gas transmission through hole. The top column is arranged in the gas transmission through hole of the sleeve in a penetrating way, the top column is provided with a wafer bearing seat, when the first gas transmission channel transmits gas to the bottom of the wafer lifting device, the top column is lifted up due to the flow of the gas, when the height of the top column in the sleeve exceeds the height of the exhaust through hole, the gas is exhausted to the space of the wafer recess through the exhaust through hole and then is exhausted through the exhaust channel, so that the wafer lifting height device is adjusted.
In this embodiment, the rotating disk system for thin film deposition further includes a second gas transmission channel disposed on the machine platform, the second gas transmission channel further communicates with the space of the wafer recess through at least two gas transmission ports, when the second gas transmission channel inputs gas into the space of the wafer recess through at least two gas transmission ports, the disk can be lifted and rotated, and the gas is exhausted from the exhaust channel.
In this embodiment, the disk is further provided with a wafer carrier recess matching the shape of the wafer carrier of the top post, so that the top post is lifted when the disk is lifted.
In this embodiment, the wafer recess is further provided with a top pillar receiving groove for receiving the top pillar, and the top pillar receiving groove is communicated with the first gas transmission channel.
In this embodiment, the bottom of the top pillar is provided with a support rod.
In this embodiment, an exhaust gap is further disposed on the disk and on one side of the exhaust through hole of the sleeve, so that the exhaust through hole exhausts to the exhaust channel.
In this embodiment, the rotating disk system for thin film deposition further includes a gas output device, wherein the gas output device is communicated with the first gas transmission channel and the second gas transmission channel to output gas to the first gas transmission channel and the second gas transmission channel.
The purpose, technical content, and features of the present disclosure and the effects achieved thereby will be more readily understood through the following detailed description of the embodiments.
Drawings
FIG. 1 is a diagram of a wafer loading system in the prior art.
Fig. 2 is a perspective view of the present disclosure.
FIG. 3 is a side schematic view of a first gas delivery channel of the present disclosure.
FIG. 4 is a side schematic view of a second gas delivery channel of the present disclosure.
Fig. 5 is a schematic view illustrating a rotation state of the disk driven by the present disclosure.
Fig. 6 and 7 are schematic views illustrating the continuous states of the wafer lifting device according to the present disclosure.
Description of reference numerals:
1 thin film deposition rotating disc system;
10, a machine table;
12 wafer recesses;
120 top column accommodating grooves;
122 exhaust grooves;
14 disks;
140 a wafer receiving groove;
142 wafer carrier grooves;
16 exhaust gaps;
20 a wafer lifting device;
22 a sleeve;
220 gas transmission perforation;
222 exhaust perforations;
24 top pillars;
240, mounting a top pillar;
242 lower top posts;
244 a wafer susceptor;
246 support rods;
30 a first gas transmission channel;
40 an exhaust passage;
50 a second gas transmission channel;
a 52 gas transfer port;
54 airflow channels;
60, a wafer;
62 a gas injector;
90, a wafer;
92 an air duct;
920, opening of the air duct;
a 94 exhaust vent;
a 96-small carrier tray;
98 gas injector.
Detailed Description
The structure of the thin film deposition rotating disc system can push the wafer out of the disc only through the control of gas, is beneficial to a mechanical arm to take and place the wafer, and can effectively improve the production efficiency according to the requirement of automatic production.
To further understand how to achieve the above-mentioned effects, embodiments of a rotating disk system for thin film deposition are described in detail. Referring to fig. 2 and 3, a structure of a rotating disk system 1 for thin film deposition includes a machine 10 which can be a large carrying disk, the machine 10 is provided with at least a wafer recess 12, a disk 14 can be disposed in the wafer recess 12, and the disk 14 is provided with a wafer accommodating groove 140 for accommodating a wafer (not shown). The wafer lifting device 20 is disposed through the center of the disk 14, and the wafer lifting device 20 is disposed in the top pillar receiving groove 120 of the wafer recess 12, wherein the wafer lifting device 20 includes a sleeve 22 and a top pillar 24, the sleeve 22 is disposed on the wafer recess 12, the sleeve 22 has a gas transmission through hole 220, and at least one exhaust through hole 222 is disposed at a position near the top of the sleeve 22 and is vertically connected to the gas transmission through hole 220. In addition, the disk 14 is provided with an exhaust gap 16 at one side of the exhaust through hole 222 of the casing 22, so that the exhaust through hole 222 can exhaust air effectively. The top pillar 24 is disposed through the gas transmission hole 220 of the sleeve 22 and located in the top pillar receiving groove 120 of the wafer recess 12, the top pillar 24 further includes an upper top pillar 240 and a lower top pillar 242, the upper top pillar 240 is disposed on the lower top pillar 242, wherein the upper top pillar 240 has a wafer carrier 244, the lower top pillar 242 is disposed in the top pillar receiving groove 120, and a support rod 246 is disposed below the lower top pillar 242 to reserve a space of the top pillar receiving groove 120, so that the top pillar 24 is lifted by the gas input.
The machine 10 further has a first gas transmission channel 30, the first gas transmission channel 30 is connected to the top pillar receiving recess 120 of the wafer recess 12 and is connected to the gas transmission through hole 220 of the sleeve 22, and the first gas transmission channel 30 can be connected to a gas output device (not shown), so that the gas output device can transmit gas to the gas transmission through hole 220 and the top pillar 24 in the gas transmission through hole 220 can be lifted according to the flow rate of the gas.
The machine 10 is further provided with an exhaust passage 40, the exhaust passage 40 is communicated with the space of the wafer recess 12, when the top pillar 24 is located in the sleeve 22 and the height of the top pillar exceeds the exhaust through hole 222 on the sleeve 22, the gas can be exhausted from the exhaust through hole 222 to the space of the wafer recess 12 and then exhausted from the exhaust passage 40, so as to adjust the flow rate of the gas and adjust the lifting height of the top pillar 24. The wafer recess 12 is provided with an exhaust groove 122, the exhaust groove 122 is disposed around the wafer lifting device 20, the exhaust groove 122 is communicated with the exhaust channel 40, and the exhaust groove 122 may be a radial exhaust groove 122 to facilitate the gas to be exhausted from the exhaust channel 40.
The thin film deposition rotating disk system 1 of the present disclosure has an exhaust structure for rotating the disk 14, in addition to the first gas transmission channel 30 for lifting the top pillar 24 by using the gas flow. Referring to fig. 2 and 4 for details of the air exhaust structure for rotating the disk 14, as shown in the figure, the machine 10 is further provided with a second air channel 50 disposed on the machine 10, the second air channel 50 is connected to the space of the wafer pocket 12 through at least two air inlets 52, the two air inlets 52 are disposed on at least two sides of the wafer pocket 12, the wafer pocket 12 is further provided with at least two air channels 54 respectively connected to the air inlets, in this embodiment, three air inlets 52 and three air channels 54 are provided, and the air channels 54 are disposed on the wafer pocket 12 in a radial arrangement. The second gas transmission channel 50 is further connected to a gas output device (not shown), so that the gas output device can output gas to the second gas transmission channel 50. When the second gas transmission channel 50 transmits gas to the gas flow channel 54 through the two gas transmission ports 52 and flows into the space of the wafer pocket 12, the disk 14 can be lifted by the flow rate of the gas, and the gas flow channels 54 are arranged in a radial shape to generate a rotating gas flow, so that the disk 14 rotates. And since the exhaust passage 40 communicates with the space of the wafer pocket 12, the gas exhausted from the second gas transmission passage 50 can also be exhausted through the exhaust passage 40. In addition, the top surface of the disk 14 is provided with wafer susceptor grooves 142, and the wafer susceptor grooves 142 conform to the shape of the wafer susceptor 244 of the top post 24, so that the top post 24 can be lifted together when the disk 14 is lifted.
Next, referring to fig. 5, a using state of the present embodiment for depositing a film on a wafer will be described. When depositing a thin film on a wafer, the wafer 60 is placed in the wafer receiving groove 140 of the disk 14, and then the gas output device (not shown) connected to the second gas transmission channel 40 of the machine 10 is controlled to output gas, so that the gas is input into the second gas transmission channel 50, and the gas flows into the space communicated with the wafer recess 12 through the two gas transmission ports 52, so that the disk 14 carrying the wafer 60 is lifted by the gas flow, because the wafer carrier recess 142 formed on the upper surface of the disk 14 matches the shape of the wafer carrier 244 of the top pillar 24, when the disk 14 is lifted, the top pillar 240 and the bottom pillar 242 of the top pillar 24 can be separated together, and only the top pillar 240 and the disk 14 are lifted. Furthermore, because the gas inlets 52 are disposed on at least two sides of the wafer recess 12 and the gas channels 54 are radially arranged, the gas is exhausted from the exhaust channel 40, and the shape of the radial exhaust grooves 122 outside the exhaust channel 40 is matched, so that the disk 14 can be rotated by the generated rotational gas flow. After the disk 14 drives the wafer 60 to rotate stably, the gas injector 62 can be controlled to inject the gas for depositing the film, so that the gas is uniformly sprayed on the rotating wafer 60 to complete the film deposition.
Referring to FIG. 6, after the deposition of the thin film is completed, the gas output device stops outputting gas to the second gas transmission channel 50, so that the disk 14 is lowered to the wafer seat 12. Then, the gas output device is controlled to input gas into the first gas transmission channel 30, so that the gas is input into the top pillar receiving groove 120, and due to the arrangement of the support rod 246, a gap is left in the top pillar receiving groove 120 for inputting the gas, and the top pillar 24 can be lifted according to the flow of the gas, so that the wafer arranged on the wafer bearing seat 244 is lifted up and separated from the disk 14, and at this time, an automatic picking device, such as a robot arm, can be controlled to pick up the wafer 60, so as to effectively automate and improve the wafer production efficiency.
Referring to fig. 7, the height of the top pillar 24 is controlled according to the flow rate of the gas flowing through the first gas transmission channel 30 and the shielded area of the exhaust through hole 222. In detail, as the gas flows in through the first gas transmission channel 30 less, the height of the top pillar 24 relative to the lift is not high, so that the exhaust penetration holes 222 are more shielded. On the contrary, the more the gas flows in the first gas transmission channel 30, the more the top pillar 24 is pushed up, but when the rising height of the top pillar 24 exceeds the height of the exhaust through hole 222 in the casing 22, the top pillar 24 cannot shield the exhaust through hole 222, at this time, the gas input into the top pillar receiving groove 120 can be exhausted from the exhaust through hole 222, the mechanism can control and balance the top pillar 24 at the set position, when the input and exhaust flow reaches the balance, the top pillar 24 cannot be pushed up, and the limiting effect is achieved by the above manner. When the gas is exhausted from the exhaust hole 222, the gas can flow from the exhaust gap 16 between the sleeve 22 and the disk 14 into the space of the wafer pocket 12 and then be exhausted from the exhaust channel 40.
In summary, the structure of the present disclosure can lift the wafer out of the disk only by controlling the gas, which is helpful for the robot to pick and place the wafer, and can effectively improve the production efficiency in response to the requirement of the automated production.
The above-described embodiments are merely preferred embodiments of the disclosure, which are not intended to limit the scope of the disclosure. Therefore, all equivalent changes or modifications of the features and spirit described in the scope of the present disclosure should be included in the claims of the present disclosure.
Claims (12)
1. A thin film deposition spinning disk system, comprising:
a machine platform, wherein at least one wafer recess is arranged on the machine platform;
the disc is arranged in the wafer recess and is provided with a wafer accommodating groove;
the wafer lifting device penetrates through the center of the disc;
the first gas transmission channel is arranged on the machine table and communicated with the space of the wafer recess so as to transmit gas to the bottom of the wafer lifting device and enable the wafer lifting device to lift; and
and the exhaust channel is arranged on the machine table and communicated with the space of the wafer recess, so that gas is exhausted from the exhaust channel to adjust the lifting height of the wafer lifting device.
2. The thin film deposition spinning disk system of claim 1, wherein the wafer lifting device further comprises:
the sleeve is arranged on the wafer recess and is provided with a gas transmission through hole; and
the exhaust perforation is positioned at the position, close to the top, of the sleeve and communicated with the gas transmission perforation; and
the top column penetrates through the gas transmission through hole of the sleeve, and a wafer bearing seat is arranged on the top column; the first gas transmission channel is used for transmitting gas to the bottom of the wafer lifting device, so that the top column rises according to the flow of the gas, and when the height of the top column in the sleeve exceeds the exhaust through hole, the gas is exhausted to the space of the wafer recess through the exhaust through hole and then exhausted through the exhaust channel, so that the flow of the gas is adjusted to limit the lifting height of the top column.
3. The thin film deposition spinning disk system of claim 2, further comprising: the second gas transmission channel is arranged on the machine table; the second gas transmission channel is communicated with the space of the wafer recess through at least two gas transmission ports, when gas is input into the space of the wafer recess through at least two gas transmission ports, the disk can be lifted and rotated, and the gas is exhausted from the exhaust channel.
4. The thin film deposition rotary disk system as claimed in claim 3, wherein the wafer pocket further has at least two gas flow channels respectively communicating with the two gas transfer ports, and the two gas flow channels are radially arranged on the wafer pocket.
5. The thin film deposition turntable system of claim 3, wherein the disk plate is further provided with wafer carrier recesses conforming to the shape of the wafer carrier of the lift pins to lift the lift pins together when the disk plate is raised.
6. The thin film deposition rotating disk system of claim 2, wherein the top pillar further comprises an upper top pillar and a lower top pillar, the upper top pillar being disposed on the lower top pillar.
7. The thin film deposition rotating disk system as claimed in claim 2, wherein the wafer pocket further comprises a top pillar receiving groove for receiving the top pillar, and the top pillar receiving groove communicates with the first gas transmission channel.
8. The thin film deposition rotating disk system as claimed in claim 2, wherein a support rod is provided at the bottom of the top pillar.
9. The thin film deposition rotating disk system as claimed in claim 2, wherein an exhaust gap is further provided on the disk on a side of the exhaust hole of the sleeve to exhaust the exhaust hole to the exhaust passage.
10. The thin film deposition rotating disk system of claim 2, wherein the exhaust perforation is disposed perpendicular to the gas delivery perforation.
11. The thin film deposition rotating disk system as claimed in claim 3, further comprising a gas output means communicating the first gas delivery passage and the second gas delivery passage to output gas to the first gas delivery passage and the second gas delivery passage.
12. The rotating disk system for thin film deposition as claimed in claim 1, wherein the wafer seat is provided with an exhaust groove and the exhaust groove is disposed around the wafer lift device, the exhaust groove communicating with the exhaust channel.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW109115618 | 2020-05-11 | ||
| TW109115618A TWI747281B (en) | 2020-05-11 | 2020-05-11 | Thin film deposition rotating disk system |
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| CN112251735A true CN112251735A (en) | 2021-01-22 |
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| CN202022409947.1U Active CN214736079U (en) | 2020-05-11 | 2020-10-27 | Thin film deposition rotating disk system |
| CN202011160763.4A Pending CN112251735A (en) | 2020-05-11 | 2020-10-27 | Thin film deposition rotating disk system |
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| TWI747281B (en) * | 2020-05-11 | 2021-11-21 | 大陸商蘇州雨竹機電有限公司 | Thin film deposition rotating disk system |
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- 2020-05-11 TW TW109115618A patent/TWI747281B/en active
- 2020-10-27 CN CN202022409947.1U patent/CN214736079U/en active Active
- 2020-10-27 CN CN202011160763.4A patent/CN112251735A/en active Pending
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| CN110890308A (en) * | 2018-09-07 | 2020-03-17 | 长鑫存储技术有限公司 | Wafer bearing device, glue coating developing equipment and glue coating developing method |
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| CN214736079U (en) * | 2020-05-11 | 2021-11-16 | 苏州雨竹机电有限公司 | Thin film deposition rotating disk system |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202142720A (en) | 2021-11-16 |
| TWI747281B (en) | 2021-11-21 |
| CN214736079U (en) | 2021-11-16 |
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