CN209702861U - A kind of device improving vapor deposition - Google Patents
A kind of device improving vapor deposition Download PDFInfo
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- CN209702861U CN209702861U CN201920252973.2U CN201920252973U CN209702861U CN 209702861 U CN209702861 U CN 209702861U CN 201920252973 U CN201920252973 U CN 201920252973U CN 209702861 U CN209702861 U CN 209702861U
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- wafer
- warm table
- yoke
- turntable
- transmission arm
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- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The utility model provides a kind of device for improving vapor deposition, including warm table, central elevator structure, spray nozzle and transmission arm.Turntable and transmission arm are risen using lifting drive unit, and places wafer on transmission arm, by transmitting the fixed wafer of the structure of hoop of arm, so that wafer will not move.Then turntable is declined chimeric with placing groove, the wafer can be close to heating with crystallizing field, simultaneously by spray nozzle output-response gas, in the environment of the temperature and pressure manually set, so that the surface that the reaction gas for being ionized to ionic state is deposited on wafer forms one layer of plated film.After reaction, turntable rises and opens rotary power units driving turntable rotation, the wafer is transferred to next crystallizing field, a new wafer is put on the transmission arm of the crystallizing field simultaneously, repeatedly, so that reaching required thickness after cumulative plated film of the wafer in warm table repeatedly, takes out wafer and complete coated film deposition, improve the efficiency of coated film deposition.
Description
Technical field
The utility model relates to the apparatus field of wafer vapor deposition more particularly to a kind of devices for improving vapor deposition.
Background technique
In the equipment of plasma reinforced chemical vapour deposition (PECVD), it is connected on the outside of warm table center lifting disk
Multiple straight yokes, when wafer is placed on yoke, middle part can be blocked by yoke, and then influence wafer in warm table
Heating.Because the number of the received heat in each region of chip directly affects the plated film of the wafer surface region within the unit time
Deposition rate, so uniform heating or heat transfer are most important.
In the process of implementing the utility model, following problem exists in the prior art in inventor: existing equipment
The heating external yoke of microscope carrier central disc need to rise transferring plates, and then need that disk decline yoke is sunk to it and engraved in deposition process
In empty mechanism, because can not directly participate in heat transfer in hollow out position top wafer region, so that full wafer chip receives
Heat can not be consistent, influences the deposition uniformity of crystal column surface.
Utility model content
For this reason, it may be necessary to provide it is a kind of improve vapor deposition device, solve existing wafer vapor deposition when efficiency compared with
It is low, and the non-uniform problem of deposition of crystal column surface.
To achieve the above object, a kind of device for improving vapor deposition, including warm table, center lifting are inventor provided
Mechanism, spray nozzle and transmission arm；Be provided with hollow slots in the middle part of the warm table, positioned at the lateral surface of hollow slots and warm table it
Between warm table on circumference array be provided with multiple crystallizing fields, the central elevator structure includes that lifting drive unit, rotation are dynamic
Power unit and turntable, the turntable are arranged on the output shaft of lifting drive unit, and the chimeric setting of turntable rises in hollow slots
Drop power unit is arranged on the output shaft of rotary power units, and rotary power units are arranged in the rack of warm table；It is described
Spray nozzle is arranged in the top of warm table, and the spray nozzle be used to that the crystallizing field spray of warm table to be needed to be vapor-deposited it is anti-
Answer gas；The transmission arm be provided with it is multiple, and transmit arm setting quantity it is identical as the quantity that crystallizing field is arranged, it is described
One end circumference array for transmitting arm is arranged on turntable, and the other end of the transmission arm is provided with the hoop of open loop structure,
A placing groove is provided on warm table between each crystallizing field and hollow slots, the chimeric setting of the transmission arm is being put
It sets in slot.
Further, the transmission arm includes the first yoke and the second yoke, first yoke and the second yoke
One end is arranged on turntable, and the other end of the first yoke and the second yoke is symmetrical arranged a semicircle hoop.
Further, the placing groove is arranged along the edge open loop of crystallizing field, and first yoke is set with the second yoke
It sets in placing groove.
Further, the lifting drive unit is cylinder, hydraulic cylinder or linear motor.
Further, the medial surface of the hoop is provided with step notch, and the step notch places wafer for chimeric.
Further, the side wall of the warm table is provided with feed inlet and outlet.
It is different from the prior art, above-mentioned technical proposal rises the turntable and biography of central elevator structure by lifting drive unit
Arm is sent, and places wafer on transmission arm, because of the structure of transmission arm placed end and use hoop, only to wafer
Edge clamped or placed fixation, therefore will not influence the vapor deposition of wafer entirety so that each position of wafer by
It is hot uniform, and effective the case where avoiding wafer from shifting when transmitting arm movement.Therefore, when turntable declines and places
After slot is chimeric, full wafer wafer can be close to heating with crystallizing field, while by spray nozzle output-response gas, in the temperature manually set
In the environment of degree and pressure, so that the surface that the reaction gas for being ionized to ionic state is deposited on wafer forms one layer of plated film.Instead
After answering, turntable rises and opens rotary power units driving turntable rotation, which is transferred to next crystallizing field, simultaneously
It is put into a new wafer on the transmission arm of the crystallizing field, repeatedly, so that wafer is in warm table through multiple
Reach required thickness after cumulative plated film, and after the circle of rotation one or multi-turn, the wafer that plated film is completed is taken out, and then improves crystalline substance
The efficiency of circle plated film.
Detailed description of the invention
Fig. 1 is the structure chart for improving the device of vapor deposition described in specific embodiment；
Fig. 2 is the cross-sectional view for improving the device of vapor deposition described in specific embodiment.
Description of symbols:
10, warm table；11, hollow slots 12, crystallizing field；13, placing groove；
14, feed inlet and outlet；
20, central elevator structure；21, lifting drive unit；22, rotary power units；
23, turntable；
30, spray nozzle；
40, arm is transmitted；41, hoop；42, the first yoke；43, the second yoke；
411, step notch；
Specific embodiment
Technology contents, construction feature, the objects and the effects for detailed description technical solution, below in conjunction with specific reality
It applies example and attached drawing is cooperated to be explained in detail.
Fig. 1 figure and Fig. 2 are please referred to, the present embodiment provides a kind of devices for improving vapor deposition, including warm table 10, center
Elevating mechanism 20, spray nozzle 30 and transmission arm 40.Be provided with hollow slots 11 in the middle part of warm table, warm table be located at hollow slots with
Circumference array is provided with multiple crystallizing fields 12 between the lateral surface of warm table, has putting for transmission arm in the edge of crystallizing field
Set slot 13, and placing groove and hollow slots are conducted setting, can completely be fitted into arm is transmitted by placing groove.Center lifting
Mechanism includes lifting drive unit 21, rotary power units 22 and turntable 23, and lifting drive unit is cylinder, hydraulic cylinder or straight line
Motor.And rotary power units can be servo motor.Turntable is mounted on the output shaft of cylinder, and the chimeric setting of turntable
In hollow slots, and servo motor is fixed in the rack of warm table, and the fixing seat of cylinder is mounted on servo motor
On output shaft.A hollow slots are opened up in the middle part of warm table, central elevator structure is installed to the hollow slots, pass through lifting
The mode of rotation makes the wafer being located on transmission arm that can carry out repeating plated film with rotational transform position.
Specifically, rising the turntable and transmission arm of central elevator structure by lifting drive unit, and pass through warm table
Feed inlet and outlet 14 on side wall conveys wafer, and wafer is placed on transmission arm.It is controlled again by lifting drive unit at this time
Turntable decline so that transmission arm is closely chimeric with placing groove, while making full wafer wafer that can be close to heating with crystallizing field.In
While controlling the temperature and pressure in warm table, by being located at the reaction gas of the spray nozzle output above warm table, this is anti-
It answers gas that can be ionized into ionic state under radio-frequency power supply effect, generates new substance to reach and react to each other between plasma
It is deposited on one layer of plated film of formation on the surface of wafer.In order to ensure the wafer on each crystallizing field can uniformly gas phase sink
Product, therefore a spray nozzle can be correspondingly arranged on each crystallizing field.To after reaction, turntable rises again, and open
Rotary power units drive turntable rotation, which are transferred on the crystallizing field of next deposition, while in the biography of the crystallizing field
It send and is put into a new wafer on arm, repeatedly, so that wafer is in the cavity of warm table through repeatedly cumulative plated film
After reach required thickness, and after the circle of rotation one or multi-turn, the wafer that plated film is completed is taken out from feed inlet and outlet, reaches completion
To the purpose of wafer plated film.
Because transmitting the hoop 41 of arm placed end and use open loop structure in the present embodiment, transmit in the present embodiment
Arm has the first yoke 42 and the second yoke 43, and is symmetrical arranged a semicircular ring at the placement end of the two yokes
Hoop, so that the hoop for forming an open loop structure places wafer.In order to improve the fixation wafer that hoop can be stable, on hoop
Step notch 411 is opened up, by step notch convenient for placing wafer, so that rotary power units or lifting drive unit are in movement
When, the wafer on two yokes will not shift, to reach in replacement crystallizing field every time all in the same position of wafer
It sets and is vapor-deposited, so that wafer plated film is uniform, improve the acceptance rate of wafer production.And the setting of hoop structure, so that logical
The side of fixed wafer is crossed, the whole heating of wafer will not be had an impact, be achieved the purpose that wafer is heated evenly, improve
The uniformity of coated film deposition, while but also the consistency of the deposition effect of every wafer is higher.
It should be noted that being not intended to limit although the various embodiments described above have been described herein
The scope of patent protection of the utility model.Therefore, based on the innovative idea of the utility model, embodiment described herein is carried out
Change and modification or equivalent structure or equivalent flow shift made based on the specification and figures of the utility model, directly
Or above technical scheme is used in other related technical areas indirectly, it is included in the protection model of the utility model patent
Within enclosing.
Claims (6)
1. a kind of device for improving vapor deposition, it is characterised in that: including warm table, central elevator structure, spray nozzle and transmission
Arm；
Hollow slots are provided in the middle part of the warm table, Circle-Array on the warm table between hollow slots and the lateral surface of warm table
Column are provided with multiple crystallizing fields, and the central elevator structure includes lifting drive unit, rotary power units and turntable, and described turn
Disk is arranged on the output shaft of lifting drive unit, and the chimeric setting of turntable, in hollow slots, the setting of lifting drive unit is being revolved
On the output shaft of rotatory force unit, rotary power units are arranged in the rack of warm table；
The top of warm table is arranged in the spray nozzle, and the spray nozzle is used to need gas phase to the crystallizing field spray of warm table
The reaction gas of deposition；
The transmission arm be provided with it is multiple, and transmit arm setting quantity it is identical as the quantity that crystallizing field is arranged, the biography
One end circumference array of arm is sent to be arranged on turntable, the other end of the transmission arm is provided with the hoop of open loop structure, often
A placing groove is provided on warm table between a crystallizing field and hollow slots, the chimeric setting of the transmission arm is being placed
In slot.
2. a kind of device for improving vapor deposition according to claim 1, it is characterised in that: the transmission arm includes the
One end of one yoke and the second yoke, first yoke and the second yoke is arranged on turntable, the first yoke and the second yoke
The other end be symmetrical arranged a semicircle hoop.
3. a kind of device for improving vapor deposition according to claim 2, it is characterised in that: the placing groove is along deposition
The edge open loop in area is arranged, and first yoke and the second yoke are arranged in placing groove.
4. a kind of device for improving vapor deposition according to claim 1, it is characterised in that: the lifting drive unit is
Cylinder, hydraulic cylinder or linear motor.
5. a kind of device for improving vapor deposition according to claim 1, it is characterised in that: the medial surface of the hoop is set
It is equipped with step notch, the step notch places wafer for chimeric.
6. a kind of device for improving vapor deposition according to claim 1, it is characterised in that: the side wall of the warm table is set
It is equipped with feed inlet and outlet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920252973.2U CN209702861U (en) | 2019-02-28 | 2019-02-28 | A kind of device improving vapor deposition |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920252973.2U CN209702861U (en) | 2019-02-28 | 2019-02-28 | A kind of device improving vapor deposition |
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| Publication Number | Publication Date |
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| CN209702861U true CN209702861U (en) | 2019-11-29 |
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| CN201920252973.2U Active CN209702861U (en) | 2019-02-28 | 2019-02-28 | A kind of device improving vapor deposition |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114686860A (en) * | 2022-06-01 | 2022-07-01 | 江苏邑文微电子科技有限公司 | Plasma enhanced chemical vapor deposition device and deposition method |
-
2019
- 2019-02-28 CN CN201920252973.2U patent/CN209702861U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114686860A (en) * | 2022-06-01 | 2022-07-01 | 江苏邑文微电子科技有限公司 | Plasma enhanced chemical vapor deposition device and deposition method |
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