CN112242443A - 高电子迁移率晶体管及其形成方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 230000005540 biological transmission Effects 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 135
- 229910002601 GaN Inorganic materials 0.000 claims description 16
- 239000011229 interlayer Substances 0.000 claims description 10
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 229910001092 metal group alloy Inorganic materials 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 229910017052 cobalt Inorganic materials 0.000 description 6
- 239000010941 cobalt Substances 0.000 description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 229910052763 palladium Inorganic materials 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Abstract
本发明公开一种高电子迁移率晶体管及其形成方法,其中该高电子迁移率晶体管,包含一载流子传输层、一载流子供应层、一主栅极、一控制栅极、一源极电极以及一漏极电极。载流子传输层位于一基底上。载流子供应层位于载流子传输层上。主栅极以及控制栅极位于载流子供应层上。源极电极以及漏极电极位于主栅极以及控制栅极的相对两侧,其中源极电极以一金属内连线结构电连接控制栅极。
Description
技术领域
本发明涉及一种高电子迁移率晶体管及其形成方法,且特别是涉及一种电连接控制栅极以及源极电极的高电子迁移率晶体管及其形成方法。
背景技术
高电子迁移率晶体管具有于电子、机械以及化学等特性上的众多优点,例如宽带隙、高击穿电压、高电子迁移率、大弹性模数(elastic modulus)、高压电与压阻系数(highpiezoelectric and piezoresistive coefficients)等与化学钝性。上述优点使氮化镓基材料可用于如高亮度发光二极管、功率开关元件、调节器、电池保护器、面板显示驱动器、通讯元件等应用的元件的制作。
高电子迁移率(High electron mobility transistor,HEMT),也是场效应晶体管的一种,它使用两种具有不同带隙的材料形成异质结作为载流子通道,而不像金属氧化物半导体场效晶体管那样,直接使用掺杂的半导体而不是异质结来形成导电通道。砷化镓、砷镓铝三元化合物半导体是构成这种装置的可选材料,当然根据具体的应用场合,可以有其他多种组合。例如,含铟的装置可表现出更好的高频性能,而近年来发展的氮化镓高电子迁移率晶体管则凭借其良好的高频特性吸引了大量关注。
发明内容
本发明提出一种高电子迁移率晶体管及其形成方法,其电连接控制栅极以及源极电极,以降低主栅极与漏极电极之间的电压差。
本发明提供一种高电子迁移率晶体管,包含一载流子传输层、一载流子供应层、一主栅极、一控制栅极、一源极电极以及一漏极电极。载流子传输层位于一基底上。载流子供应层位于载流子传输层上。主栅极以及控制栅极位于载流子供应层上。源极电极以及漏极电极位于主栅极以及控制栅极的相对两侧,其中源极电极以一金属内连线结构电连接控制栅极。
本发明提供一种形成高电子迁移率晶体管的方法,包含下述步骤。首先,依序形成一载流子传输层以及一载流子供应层于一基底上。接着,形成一主栅极以及一控制栅极于载流子供应层上。接续,形成一源极电极以及一漏极电极于主栅极以及控制栅极的相对两侧。之后,以一金属内连线结构电连接源极电极及控制栅极。
基于上述,本发明提供一种高电子迁移率晶体管及其形成方法,其依序形成一载流子传输层以及一载流子供应层于一基底上;形成一主栅极以及一控制栅极于载流子供应层上;形成一源极电极以及一漏极电极于主栅极以及控制栅极的相对两侧;以及以一金属内连线结构电连接源极电极及控制栅极。如此,由于控制栅极位于主栅极以及漏极电极之间,且控制栅极电连接源极电极,因此可降低主栅极与漏极电极之间的电压差。
附图说明
图1为本发明一实施例的高电子迁移率晶体管的剖面示意图;
图2为本发明另一实施例的高电子迁移率晶体管的剖面示意图;
图3为本发明一实施例的形成高电子迁移率晶体管的方法的剖面示意图;
图4为本发明一实施例的形成高电子迁移率晶体管的方法的剖面示意图;
图5为本发明一实施例的形成高电子迁移率晶体管的方法的剖面示意图;
图6为本发明另一实施例的形成高电子迁移率晶体管的方法的剖面示意图;
图7为本发明另一实施例的高电子迁移率晶体管的剖面示意图;
图8为本发明另一实施例的高电子迁移率晶体管的剖面示意图。
主要元件符号说明
10:含氟离子掺杂区
100、200、300、400:高电子迁移率晶体管
110:基底
120:缓冲层
130:载流子传输层
140:载流子供应层
150、350、450:主栅极
152、262:底部
154、264:顶部
160、260:控制栅极
170:层间介电层
170’:毯覆式层间介电层
182:源极电极
184:漏极电极
190:金属内连线结构
352、452:绝缘层
D1、D2:通道区
R1:主栅极凹槽
R2:控制栅极凹槽
R3:源极凹槽
R4:漏极凹槽
R5:凹槽
S1、S2、S3:底面
具体实施方式
图1绘示本发明一实施例的高电子迁移率晶体管的剖面示意图。如图1所示,提供一基底110。基底110例如是一硅基底、一含硅基底、一三五族覆硅基底(例如GaN-on-silicon)、一石墨烯覆硅基底(graphene-on-silicon)、一碳化硅基底、一氧化铝基底或一硅覆绝缘(silicon-on-insulator,SOI)基底等半导体基底。基底110可为单层基底、多层基底、梯度基底或上述的组合。
形成一缓冲层120于基底110上。缓冲层120可包含一堆叠的三五族半导体层,其中堆叠的三五族半导体层的晶格由下而上可具有梯度渐变的变化。缓冲层120可例如为氮化镓或氮化铝,但本发明不以此为限。缓冲层120可例如以一分子束外延制作工艺(molecular-beam epitaxy,MBE)、一有机金属气相沉积(metal organic chemical vapordeposition,MOCVD)制作工艺、一化学气相沉积(chemical vapor deposition,CVD)制作工艺、一氢化物气相外延(hydride vapor phase epitaxy,HVPE)制作工艺形成,但本发明不限于此。
形成一载流子传输层130于缓冲层120上。在本实施例中,载流子传输层130可例如为一三五族半导体层,但本发明不以此为限。较佳者,载流子传输层130可例如为一非有意掺杂的氮化镓层。载流子传输层130可例如以一分子束外延制作工艺(molecular-beamepitaxy,MBE)、一有机金属气相沉积(metal organic chemical vapor deposition,MOCVD)制作工艺、一化学气相沉积(chemical vapor deposition,CVD)制作工艺、一氢化物气相外延(hydride vapor phase epitaxy,HVPE)制作工艺等形成,但本发明不限于此。
形成一载流子供应层140于载流子传输层130上,使载流子传输层130及载流子供应层140的接触界面形成一通道区D1,此通道区D即为二维电子气形成导通电流之处,且在此状态下的高电子迁移率晶体管通常具有正常开启(Normally on)的操作方式。由于载流子传输层130与载流子供应层140的材料能带间隙(band gap)不同之故,载流子传输层130与载流子供应层140的界面形成异质结(heterojunction)。异质结处的能带弯曲,导带(conduction band)弯曲深处形成量子阱(quantum well),将压电效应(piezoelectricity)所产生的电子约束于量子阱中,因此在载流子传输层130及载流子供应层140的界面处形成二维电子气(two-dimensional electron gas,2DEG),进而形成导通电流。
在本实施例中,载流子供应层140可例如为一三五族半导体层,但本发明不以此为限。较佳者,载流子供应层140可例如为一非有意掺杂的氮化铝镓(AlxGa1-xN)层、一N型氮化铝镓(AlxGa1-xN)层或一P型氮化铝镓(AlyGa1-yN)层等。在一实施例中,载流子供应层140可例如由一外延制作工艺形成,其可例如包含硅或锗的掺质。或者,载流子供应层140可例如以一分子束外延制作工艺(molecular-beam epitaxy,MBE)、一有机金属气相沉积(metalorganic chemical vapor deposition,MOCVD)制作工艺、一化学气相沉积(chemicalvapor deposition,CVD)制作工艺、一氢化物气相外延(hydride vapor phase epitaxy,HVPE)制作工艺等所形成,但本发明不限于此。
形成一主栅极150以及一控制栅极160于载流子供应层140上。主栅极150包含一底部152以及一顶部154,其中底部152及顶部154包含不同材料。较佳者,底部152可例如为一P型氮化铝镓(AlyGa1-yN)层,而顶部154可例如为一金属或金属合金,其可例如包含金、钨、钴、钛、氮化钛、钼、铜、铝、钽、钯、银或铂等,但本发明不以此为限。控制栅极160也可例如由此些金、钨、钴、钛、氮化钛、钼、铜、铝、钽、钯、银或铂等金属或金属合金所组成,但本发明不以此为限。随着仅由金属所构成的栅极电极结构开始导入于由P型氮化镓(GaN)所构成的材料作为栅极电极下半部,高电子迁移率晶体管在此环境模式下即由正常开启操作模式转换为正常关闭(Normally off)的操作方式。
在本实施例中,控制栅极160仅包含金属或金属合金,且此金属或金属合金直接接触载流子供应层140。在另一实施例中,如图2所示,一控制栅极260包含一底部262以及一顶部264。较佳者,底部262可例如为一绝缘层,此绝缘层可包含氮化铝、氮化硅、氧化铝或多层的堆叠组合,而顶部264可例如为由此些金、钨、钴、钛、氮化钛、钼、铜、铝、钽、钯、银或铂等金属或金属合金所组成,但本发明不以此为限。
具体而言,形成主栅极150以及控制栅极160/260于载流子供应层140上的方法可包含下述步骤,但本发明不限于此。首先,如图3所示,形成底部152(在本实施例中即为一P型氮化镓层)于载流子供应层140的一部分(欲形成主栅极150的区域)上,其可例如先全面沉积P型氮化镓层在图案化此P型氮化镓层以形成P型氮化镓层于载流子供应层140的一部分上。接着,形成一毯覆式层间介电层170’全面覆盖载流子供应层140以及底部152。之后,图案化毯覆式层间介电层170’,以形成一层间介电层170,如图4所示。层间介电层170具有一主栅极凹槽R1以及一控制栅极凹槽R2,其中主栅极凹槽R1暴露出底部152,而控制栅极凹槽R2暴露出载流子供应层140。
接着,如以图1的实施例为例,如图5所示,则直接形成金属栅极分别于主栅极凹槽R1中的底部152上,而作为主栅极150的顶部154,以及直接形成金属栅极于控制栅极凹槽R2中的载流子供应层140上,而作为控制栅极160。形成顶部154的金属栅极以及形成控制栅极160的金属栅极可为相同或不同材质,可同时形成或者分别形成,视实际情况而定。
或者,如以图2的实施例为例,如图6所示,先形成底部262(在本实施例中为一绝缘层)于控制栅极凹槽R2中的载流子供应层140上,再形成金属栅极直接于主栅极凹槽R1中的底部152上,以及于控制栅极凹槽R2中的底部262上,其中位于主栅极凹槽R1中的金属栅极作为主栅极150的顶部154,而位于控制栅极凹槽R2中的金属栅极作为控制栅极260的顶部264。形成顶部154的金属栅极以及形成顶部264的金属栅极可为相同或不同材质,可同时形成或者分别形成,视实际情况而定。
之后,请参阅图1或图2,形成一源极电极182以及一漏极电极184于主栅极150以及控制栅极160的相对两侧。形成源极电极182以及漏极电极184于主栅极150以及控制栅极160的相对两侧的方法可包含下述步骤,但本发明不限于此。首先,蚀刻载流子供应层140,以形成一源极凹槽R3以及一漏极凹槽R4于主栅极150以及控制栅极160的相对两侧的载流子供应层140中。接着,形成源极电极182于源极凹槽R3中以及漏极电极184于漏极凹槽R4中。
较佳者,源极电极182的一底面S1、漏极电极184的一底面S2以及载流子供应层140的一底面S3共平面,以直接接触载流子传输层130及载流子供应层140的接触界面形成的通道区D1/D2(即二维电子气载流子通道)。源极电极182与漏极电极184可各自包含金、钨、钴、钛、氮化钛、钼、铜、铝、钽、钯、银或铂等金属或金属合金所组成,但本发明不以此为限。
之后,以一金属内连线结构190电连接源极电极182及控制栅极160/260。此金属内连线结构190可例如以双镶嵌制作工艺或单镶嵌制作工艺形成,其可例如为一金属线,跨设但不接触主栅极150并直接接触源极电极182及控制栅极160/260,但本发明不以此为限。如此,形成本发明的高电子迁移率晶体管100/200。
承上,本发明由于形成控制栅极160/260于主栅极150以及漏极电极184之间,且将金属内连线结构190电连接源极电极182及控制栅极160/260,因而本发明在装置不导通的状态下,可降低主栅极150与漏极电极184之间的电压差。例如,当源极电极182为0伏、主栅极150为0伏、且漏极电极184为600伏时,加入控制栅极160/260可使原来主栅极150与漏极电极184之间的电压差自600伏降至约200伏~300伏。
上述为应用于具有P型氮化铝镓(AlyGa1-yN)的主栅极150的高电子迁移率晶体管100/200,但本发明也可应用于其他高电子迁移率晶体管。图7则为具有氟掺杂的主栅极的一高电子迁移率晶体管300。本实施例与图2的实施例的差异为:主栅极150改为一主栅极350。主栅极350可例如由金、钨、钴、钛、氮化钛、钼、铜、铝、钽、钯、银或铂等金属或金属合金所组成,但本发明不以此为限。在本实施例中,主栅极350的正下方掺杂氟于载流子供应层140中,因而形成一含氟离子掺杂区10于主栅极350正下方,其中掺杂氟的步骤较佳可在形成主栅极350以及控制栅极260之后,以及形成源极电极182以及漏极电极184之前形成,但本发明不以此为限。更佳者,主栅极350的底部可包含一绝缘层352直接于含氟离子掺杂区10上。绝缘层352可例如包含氮化铝、氮化硅、氧化铝或多层的堆叠组合,但本发明不限于此。在一实施例中,绝缘层352与控制栅极260的底部262(也为绝缘层)具有相同厚度,在其他实施例中,绝缘层352的一厚度小于控制栅极260的底部262的一厚度,视实际需要而定。绝缘层352与控制栅极260的底部262可同时或分别形成。如此一来,本发明应用于此高电子迁移率晶体管300,在不导通的状态下,也可降低主栅极350与漏极电极184之间的电压差。
图8为凹入式主栅极的一高电子迁移率晶体管400。本实施例与图2的实施例的差异为:主栅极150改为一主栅极450。主栅极450可例如由金、钨、钴、钛、氮化钛、钼、铜、铝、钽、钯、银或铂等金属或金属合金所组成,但本发明不以此为限。在本实施例中,先形成一凹槽R5于载流子供应层140中,才形成主栅极450于载流子供应层140中,因而形成凹入式的主栅极450,但本发明不以此为限。更佳者,主栅极450的底部可包含一绝缘层452于载流子供应层140上。绝缘层452可例如包含氮化铝、氮化硅、氧化铝或多层的堆叠组合,但本发明不限于此。在一实施例中,绝缘层452与控制栅极260的底部262(也为绝缘层)具有相同厚度,在其他实施例中,绝缘层452的一厚度小于控制栅极260的底部262的一厚度,视实际需要而定。绝缘层452与控制栅极260的底部262可同时或分别形成。如此一来,本发明应用于此高电子迁移率晶体管400,在不导通的状态下,也可降低主栅极450与漏极电极184之间的电压差。
综上所述,本发明提供一种高电子迁移率晶体管及其形成方法,其依序形成一载流子传输层以及一载流子供应层于一基底上;形成一主栅极以及一控制栅极于载流子供应层上;形成一源极电极以及一漏极电极于主栅极以及控制栅极的相对两侧;以及以一金属内连线结构电连接源极电极及控制栅极。如此,由于控制栅极位于主栅极以及漏极电极之间,且控制栅极电连接源极电极,因此可降低主栅极与漏极电极之间的电压差。
再者,本发明形成控制栅极于主栅极以及漏极电极之间且电连接源极电极的方法,可应用于各种高电子迁移率晶体管,例如具有P型氮化铝镓的主栅极的高电子迁移率晶体管、具有氟掺杂的主栅极的高电子迁移率晶体管,或者凹入式主栅极的高电子迁移率晶体管。主栅极及控制栅极都可选择性形成绝缘层于底部,且主栅极及控制栅极的绝缘层的相对厚度视实际需要而定。
以上所述仅为本发明的优选实施例,凡依本发明权利要求所做的均等变化与修饰,都应属本发明的涵盖范围。
Claims (20)
1.一种高电子迁移率晶体管,其特征在于,包含:
载流子传输层,位于基底上;
载流子供应层,位于该载流子传输层上;
主栅极以及控制栅极,位于该载流子供应层上;以及
源极电极以及漏极电极,位于该主栅极以及该控制栅极的相对两侧,其中该源极电极以一金属内连线结构电连接该控制栅极。
2.如权利要求1所述的高电子迁移率晶体管,其中该主栅极包含底部以及顶部。
3.如权利要求2所述的高电子迁移率晶体管,其中该底部包含P型氮化镓,而该顶部包含金属。
4.如权利要求2所述的高电子迁移率晶体管,其中该底部包含绝缘层,而该顶部包含金属。
5.如权利要求1所述的高电子迁移率晶体管,还包含:
含氟离子掺杂区,位于该主栅极正下方。
6.如权利要求1所述的高电子迁移率晶体管,其中该控制栅极包含底部以及顶部。
7.如权利要求6所述的高电子迁移率晶体管,其中该底部包含绝缘层,而该顶部包含金属。
8.如权利要求1所述的高电子迁移率晶体管,其中该金属内连线结构包含金属线。
9.如权利要求1所述的高电子迁移率晶体管,还包含:
缓冲层,设置于该基底以及该载流子传输层之间。
10.如权利要求9所述的高电子迁移率晶体管,其中该缓冲层包含堆叠的三五族半导体层。
11.如权利要求1所述的高电子迁移率晶体管,其中该载流子传输层包含非有意掺杂的氮化镓层。
12.如权利要求1所述的高电子迁移率晶体管,其中该载流子供应层包含非有意掺杂的氮化铝镓(AlxGa1-xN)层、N型氮化铝镓(AlxGa1-xN)层或P型氮化铝镓(AlyGa1-yN)层。
13.一种形成高电子迁移率晶体管的方法,包含:
依序形成载流子传输层以及载流子供应层于基底上;
形成主栅极以及控制栅极于该载流子供应层上;
形成源极电极以及漏极电极于该主栅极以及该控制栅极的相对两侧;以及
以一金属内连线结构电连接该源极电极及该控制栅极。
14.如权利要求13所述的形成高电子迁移率晶体管的方法,在形成该载流子传输层以及该载流子供应层于该基底上之前,还包含:
形成缓冲层于该基底上。
15.如权利要求13所述的形成高电子迁移率晶体管的方法,其中该主栅极包含底部以及顶部。
16.如权利要求15所述的形成高电子迁移率晶体管的方法,其中该底部包含P型氮化镓,而该顶部包含金属。
17.如权利要求13所述的形成高电子迁移率晶体管的方法,其中该控制栅极包含底部以及顶部。
18.如权利要求17所述的形成高电子迁移率晶体管的方法,其中该底部包含绝缘层,而该顶部包含金属。
19.如权利要求13所述的形成高电子迁移率晶体管的方法,形成该主栅极以及该控制栅极于该载流子供应层上的步骤,包含:
形成P型氮化镓层于该载流子供应层的一部分上;
形成毯覆式层间介电层覆盖该载流子供应层;
图案化该毯覆式层间介电层,以形成层间介电层,其中该层间介电层具有主栅极凹槽以及控制栅极凹槽,且该主栅极凹槽暴露出该P型氮化镓层,而该控制栅极凹槽暴露出该载流子供应层;
形成绝缘层于该控制栅极凹槽中的该载流子供应层上;以及
形成金属栅极直接于该主栅极凹槽中的该P型氮化镓层上,以及于该控制栅极凹槽中的该绝缘层上。
20.如权利要求13所述的形成高电子迁移率晶体管的方法,形成该源极电极以及该漏极电极于该主栅极以及该控制栅极的相对两侧的步骤,包含:
蚀刻该载流子供应层,以形成源极凹槽以及漏极凹槽于该主栅极以及该控制栅极的相对两侧的该载流子供应层中;以及
形成该源极电极于该源极凹槽中以及该漏极电极于该漏极凹槽中。
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US16/525,513 US11296214B2 (en) | 2019-07-18 | 2019-07-29 | High electron mobility transistor (HEMT) and forming method thereof |
EP20168434.7A EP3767683A1 (en) | 2019-07-18 | 2020-04-07 | High electron mobility transistor (hemt) and forming method thereof |
US17/676,799 US11705512B2 (en) | 2019-07-18 | 2022-02-21 | High electron mobility transistor (HEMT) and forming method thereof |
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US11855198B2 (en) * | 2020-04-09 | 2023-12-26 | Qualcomm Incorporated | Multi-gate high electron mobility transistors (HEMTs) employing tuned recess depth gates for improved device linearity |
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