CN112225469A - 一种单银低辐射玻璃及其制备方法 - Google Patents

一种单银低辐射玻璃及其制备方法 Download PDF

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CN112225469A
CN112225469A CN202011206558.7A CN202011206558A CN112225469A CN 112225469 A CN112225469 A CN 112225469A CN 202011206558 A CN202011206558 A CN 202011206558A CN 112225469 A CN112225469 A CN 112225469A
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layer
dielectric
dielectric combination
combination layer
emissivity glass
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曾小绵
程浩
蒋宇剑
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Hunan Qibin Energy Saving Glass Co ltd
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Abstract

本发明提供一种单银低辐射玻璃及其制备方法，其中，该单银低辐射玻璃通过在低辐射玻璃的底层电介质组合层的透明电介质材料层之间设置金属层，并且将各个膜层之间设置为高、低折射率材料搭配的结构，起到减反射膜的作用，使银层厚度可以在传统厚度上大大增加，U值在原来基础上降低，使该低辐射玻璃对可见光有较高的透射率，对红外线有很高的屏蔽，具有良好的高保温性能。

Description

一种单银低辐射玻璃及其制备方法
技术领域
本发明涉及节能玻璃技术领域，特别涉及一种单银低辐射玻璃及其制备方法。
背景技术
传统单银低辐射玻璃的常见问题如下：(1)组合的透明电介质膜层无法起到减反射膜效果；(2)增厚Ag量受到限制，U值无法降低、保温性差；(3)膜层吸收率高，产品的透光率受到限制。
发明内容
本发明的主要目的是提供一种单银低辐射玻璃，使其膜层起到减反射的作用，提高透过率，降低U值，提升低辐射玻璃的性能。
为实现上述目的，本发明提出一种单银低辐射玻璃，包括：
玻璃基底；
底层电介质组合层，所述底层电介质组合层形成于所述玻璃基底上，所述底层电介质组合层包括金属层和透明电介质材料层，所述金属层设置于透明电介质材料层之间；
第一电介质组合层，所述第一电介质组合层形成于所述底层电介质组合层上，所述第一电介质组合层为高折射率透明电介质材料层；
第一阻挡层，所述第一阻挡层形成于所述第一电介质组合层上；
银层，所述银层形成于所述第一阻挡层上；
第二阻挡层，所述第二阻挡层形成于所述银层上；
第二电介质组合层，所述第二电介质组合层由高折射率透明电介质材料层和低折射率透明电介质材料层交替形成于所述第二阻挡层上；
顶层电介质组合层，所述顶层电介质组合层形成于所述第二电介质组合层上，所述顶层电介质组合层的折射率高于所述第一电介质组合层的折射率。
可选地，所述金属层材料为镍铬合金，该镍铬合金膜层厚度小于3nm。
可选地，所述金属层相邻两侧的透明电介质材料层的厚度比为1:1。
可选地，所述第一电介质组合层和所述第二电介质组合层的厚度比例为1:3.2。
可选地，所述底层电介质组合层的透明电介质材料层包括SiNx、SiAlNx中的一种或两种。
可选地，所述顶层电介质组合层包括NbZrOx、ZrOx、TiOx中的一种或多种。
可选地，所述第二电介质组合层的低折射率透明电介质材料层包括SiCNx、SiBNx、SiNx、SiAlNx中的一种或多种，所述第二电介质组合层的高折射率透明电介质材料层包括SiZrAlNx、SiZrNx、SiZrTiNx中的一种或多种。
可选地，所述第一阻挡层和所述第二阻挡层包括NiCr、NiCrOx、NiCrNx中的一种或多种。
本发明还提出一种单银低辐射玻璃的制备方法，包括：
S1、提供玻璃基底；
S2、在所述玻璃基底上采用中频电源加旋转阴极溅射沉积形成底层电介质组合层；
S3、在所述底层电介质组合层上采用中频电源加旋转阴极溅射沉积形成第一电介质组合层；
S4、在所述第一电介质组合层上采用直流电源加脉冲溅射沉积形成第一阻挡层；
S5、在所述第一阻挡层上采用直流双极脉冲电源溅射沉积形成银层；
S6、在所述银层上采用直流电源加脉冲溅射沉积形成第二阻挡层；
S7、在所述第二阻挡层上采用中频电源加旋转阴极溅射沉积形成第二电介质组合层；
S8、在所述第二电介质组合层上采用中频电源加旋转阴极溅射沉积形成顶层电介质组合层。
可选地，所述第一阻挡层和所述第二阻挡层包括镍铬，所述底层电介质组合层包括镍铬金属层，在氩气氛围中采用直流双极脉冲电源溅射镍铬合金，功率为1.2kw-4.2kw。
本发明技术方案通过在低辐射玻璃的底层电介质组合层的透明电介质材料层之间设置金属层，并且将各个膜层之间设置为高、低折射率材料搭配的结构，起到减反射膜的作用，使银层厚度可以在传统厚度上大大增加，U值在原来基础上降低，使该低辐射玻璃对可见光有较高的透射率，对红外线有很高的屏蔽，具有良好的高保温性能。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图示出的结构获得其他的附图。
图1为本发明单银低辐射玻璃的结构示意图；
图2为本发明单银低辐射玻璃的制备方法流程示意图。
附图标号说明：
标号 名称 标号 名称
100 单银低辐射玻璃 30 第一阻挡层
1 玻璃基底 40 银层
10 底层电介质组合层 50 第二阻挡层
12 金属层 60 第二电介质组合层
14 透明电介质材料层 70 顶层电介质组合层
20 第一电介质组合层
本发明目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明提出一种单银低辐射玻璃，该单银低辐射玻璃的透过率高，U值低，保温性能好。
参照图1至2，图1为本发明单银低辐射玻璃的结构示意图；图2为本发明单银低辐射玻璃的制备方法流程示意图。
在本发明实施例中，请参照图1，提出一种单银低辐射玻璃100，包括：玻璃基底1；底层电介质组合层10，所述底层电介质组合层10形成于所述玻璃基底1上，所述底层电介质组合层10包括金属层12和透明电介质材料层14，所述金属层12设置于透明电介质材料层14之间；第一电介质组合层20，所述第一电介质组合层20形成于所述底层电介质组合层10上，所述第一电介质组合层20为高折射率透明电介质材料层；第一阻挡层30，所述第一阻挡层30形成于所述第一电介质组合层20上；银层40，所述银层40形成于所述第一阻挡层30上；第二阻挡层50，所述第二阻挡层50形成于所述银层40上；第二电介质组合层60，所述第二电介质组合层60由高折射率透明电介质材料层和低折射率透明电介质材料层交替形成于所述第二阻挡层50上；顶层电介质组合层70，所述顶层电介质组合层70形成于所述第二电介质组合层60上，所述顶层电介质组合层70的折射率高于所述第一电介质组合层20的折射率。
具体的，所述单银低辐射玻璃100包括玻璃基底1和镀于玻璃基底1上的叠层结构的膜，所述玻璃基底1作为衬底，起到支撑的作用，所述膜起到阻挡红外辐射的作用。在本发明实施例中，叠层结构的膜通过溅射镀膜一层层形成于玻璃基底1上，溅射镀膜是一种新型的物理气相镀膜方式，就是用电子枪系统把电子发射并聚焦在被镀的材料上，使其被溅射出来的原子遵循动量转换原理以较高的动能脱离材料飞向基片淀积成膜。在其它实施例中，叠层结构的膜还可以通过蒸发镀膜、化学沉积等方法形成于所述玻璃基底1上，在此不做限定。本发明实施例的低辐射玻璃可以应用于建筑玻璃，车窗玻璃，以及其它需要低辐射能的场景。
具体的，玻璃基底1上的叠层结构的膜从下到上依次包括：底层电介质组合层10、第一电介质组合层20、第一阻挡层30、银层40、第二阻挡层50、第二电介质组合层60和顶层电介质组合层70。其中银层40作为功能层影响单银低辐射玻璃100的保温性能，其它电介质组合层和阻挡层调节玻璃的颜色。
具体的，底层电介质组合层10中包括金属层12和透明电介质材料层14，金属层12设置在透明电介质材料层14之间，起到外反射可以减反射的作用，减少可见光在透过玻璃时的反射率，增加可见光透过玻璃时的透过率，可以控制单银低辐射玻璃100的透过色，从而调节单银低辐射玻璃100的颜色，使得单银低辐射玻璃100在保证其颜色的情况下，银层40可以更厚。
具体的，底层电介质组合层10、第一电介质组合层20、第二电介质组合层60和顶层电介质组合层70分别设置为低折射率材料、高折射率材料、低折射率材料和更高折射率材料搭配，从而在玻璃基底1上形成高、低折射率材料搭配的减反射膜，减反射膜也可以减少可见光在透过玻璃时的反射率，增加可见光透过玻璃时的透过率，从而可以调节玻璃的颜色，提高银层40厚度，提升玻璃产品性能。
更具体的，第二电介质组合层60由高折射率透明电介质材料层和低折射率透明电介质材料层交替形成，从而在第二电介质组合层60也形成减反射膜，进一步提高单银低辐射玻璃100的膜层的减反射作用。
本发明技术方案通过在单银低辐射玻璃100的底层电介质组合层10的透明电介质材料层14之间设置金属层12，并且将各个膜层之间设置为高、低折射率材料搭配的结构，起到减反射膜的作用，使银层40厚度可以在传统厚度上大大增加，U值在原来基础上降低，使该低辐射玻璃对可见光有较高的透射率，对红外线有很高的屏蔽，具有良好的高保温性能。
可选地，请参照图1，所述金属层12材料为镍铬合金，该镍铬合金膜层厚度小于3nm。
可选地，请参照图1，所述金属层12相邻两侧的透明电介质材料层14的厚度比为1:1。
可选地，所述第一电介质组合层20和所述第二电介质组合层60的厚度比例为1:3.2。
可选地，所述底层电介质组合层10的透明电介质材料层14包括SiNx、SiAlNx中的一种或两种。
可选地，所述顶层电介质组合层70包括NbZrOx、ZrOx、TiOx中的一种或多种。
可选地，所述第二电介质组合层60的低折射率透明电介质材料层包括SiCNx、SiBNx、SiNx、SiAlNx中的一种或多种，所述第二电介质组合层60的高折射率透明电介质材料层包括SiZrAlNx、SiZrNx、SiZrTiNx中的一种或多种。
可选地，所述第一阻挡层30和所述第二阻挡层50包括NiCr、NiCrOx、NiCrNx中的一种或多种。
本发明还提出一种单银低辐射玻璃的制备方法，请参照图2，包括：
S1、提供玻璃基底。
S2、在所述玻璃基底上采用中频电源加旋转阴极溅射沉积形成底层电介质组合层。
具体的，底层电介质组合层采用中频电源加旋转阴极在氩氮氛围中溅射沉积，功率为50kw-70kw，中频电源频率为40kHz。
S3、在所述底层电介质组合层上采用中频电源加旋转阴极溅射沉积形成第一电介质组合层。
具体的，第一电介质组合层采用中频电源加旋转阴极在氩氮氛围中溅射沉积，功率为50kw-70kw，中频电源频率为40kHz。底层电介质组合层中的金属层在氩气氛围中采用直流双极脉冲电源溅射镍铬合金形成，功率为1.2kw-4.2kw。
S4、在所述第一电介质组合层上采用直流电源加脉冲溅射沉积形成第一阻挡层。
具体的，第一阻挡层在氩气氛围中采用直流双极脉冲电源溅射镍铬合金，功率为1.2kw-4.2kw。
S5、在所述第一阻挡层上采用直流双极脉冲电源溅射沉积形成银层。
具体的，银层在氩气或氪气氛围中沉积，功率为11kw-16kw。
S6、在所述银层上采用直流电源加脉冲溅射沉积形成第二阻挡层。
具体的，第二阻挡层在氩气氛围中采用直流双极脉冲电源溅射镍铬合金，功率为1.2kw-4.2kw。
S7、在所述第二阻挡层上采用中频电源加旋转阴极溅射沉积形成第二电介质组合层。
具体的，第二电介质组合层采用中频电源加旋转阴极在氩氮氛围中溅射沉积，功率为50kw-70kw，中频电源频率为40kHz。
S8、在所述第二电介质组合层上采用中频电源加旋转阴极溅射沉积形成顶层电介质组合层。
具体的，顶层电介质组合层采用中频电源加旋转阴极在氩氧氛围中溅射沉积，功率为60kw-80kw，中频电源频率为40kHz。
下面将结合具体实施例对本发明的实施方案进行详细描述，但是本领域技术人员将会理解，下列实施例仅用于说明本发明，而不应视为限制本发明的范围。实施例中未注明具体条件者，按照常规条件或制造商建议的条件进行。所用试剂或仪器未注明生产厂商者，均为可以通过市售购买获得的常规产品。
实施例1
本实施例的单银低辐射玻璃的结构依次包括：
玻璃基底；
底层电介质组合层SiAlNx/10nm，NiCr/0.5nm，SiAlNx/10nm；
第一电介质组合层SiZrAlNx/10nm；
第一阻挡层NiCr/0.8nm；
银层Ag/15nm；
第二阻挡层NiCr/0.8nm；
第二电介质组合层SiAlNx/17nm，SiZrNx/6nm，SiNx/17nm；
顶层电介质组合层ZrOx/6nm。
其中，底层电介质组合层的SiAlNx，第一电介质组合层的SiZrAlNx，第二电介质组合层的SiAlNx、SiZrNx和SiNx材料，采用中频电源加旋转阴极在氩氮氛围中溅射沉积，功率为50kw-70kw，中频电源频率为40kHz。
第一阻挡层、第二阻挡层和底层电介质组合层的金属层在氩气氛围中采用直流双极脉冲电源溅射镍铬合金形成，功率为1.2kw-4.2kw。
银层在氩气或氪气氛围中沉积，功率为11kw-16kw。
顶层电介质组合层的ZrOx采用中频电源加旋转阴极在氩氧氛围中溅射沉积，功率为60kw-80kw，中频电源频率为40kHz。
实施例2
本实施例的单银低辐射玻璃的结构依次包括：
玻璃基底；
底层电介质组合层SiAlNx/9nm，NiCr/0.5nm，SiAlNx/9nm；
第一电介质组合层SiZrAlNx/12.5nm；
第一阻挡层NiCr/0.8nm；
银层Ag/15nm；
第二阻挡层NiCr/0.8nm；
第二电介质组合层SiAlNx/17nm，SiZrTiNx/6nm，SiBNx/17nm；
顶层电介质组合层ZrOx/6nm。
实施例2的单银低辐射玻璃的各个膜层的形成方法参照实施例1所述，在此不再赘述。
本发明还包括实施例3至实施例6，以及对比例1至对比例3，其中对比例1为底层电介质组合层中不包括金属层的单银低辐射玻璃，对比例2为第一电介质组合层和第二电介质组合层都不包括高折射率材料的单银低辐射率玻璃，对比例3为第二电介质组合层不包括高折射率材料的单银低辐射玻璃。各实施例和对比例的单银低辐射玻璃的膜层结构参照表1所示，膜层形成方法参照上述实施例1所述，在此不再赘述。
表1各实施例及对比例的膜层成分及厚度
Figure BDA0002756531600000081
Figure BDA0002756531600000091
性能测试
制备好上述实施例1至实施例6，以及对比例1至对比例3的单银低辐射玻璃，然后分别进行性能测试，性能测试包括决定单银低辐射玻璃的颜色的玻面反射颜色和透过色。另外将实施例1至实施例6，以及对比例1至对比例3的单银低辐射玻璃合成中空玻璃产品，测试不同实施例和对比例的单银低辐射玻璃制备的中空玻璃对应的透过率和U值，影响玻璃产品保温性能的指标。各实施例和对比例的性能检测结果如表2所示。
表2各实施例和对比例的性能参数
Figure BDA0002756531600000092
Figure BDA0002756531600000101
根据表1和表2的数据可知，实施例1至实施例6的玻璃产品的透过率都高于对比例1至对比例3，因此，实施例1至实施例6的玻璃产品在可见光波长范围的采光好，这在北方冬天寒冷地区最需要阳光的地方尤为适宜，阳光进入室内越多越好，不需要供暖供热，从而更节能。同时实施例1至实施例6的玻璃产品的U值相对于对比例1至对比例3更低，U值是热传递系数，U值越低，证明玻璃产品的保温性能越好。因此，本发明实施例的单银低辐射玻璃采光性好又节能。其中，实施例4为本发明技术方案的最优实施例，在同等或很接近的U值情况下，其透过率最高，证明其膜系结构搭配更好。
以上所述仅为本发明的可选实施例，并非因此限制本发明的专利范围，凡是在本发明的发明构思下，利用本发明说明书及附图内容所作的等效结构变换，或直接/间接运用在其他相关的技术领域均包括在本发明的专利保护范围内。

Claims (10)

1.一种单银低辐射玻璃，其特征在于，包括：
玻璃基底；
底层电介质组合层，所述底层电介质组合层形成于所述玻璃基底上，所述底层电介质组合层包括金属层和透明电介质材料层，所述金属层设置于透明电介质材料层之间；
第一电介质组合层，所述第一电介质组合层形成于所述底层电介质组合层上，所述第一电介质组合层为高折射率透明电介质材料层；
第一阻挡层，所述第一阻挡层形成于所述第一电介质组合层上；
银层，所述银层形成于所述第一阻挡层上；
第二阻挡层，所述第二阻挡层形成于所述银层上；
第二电介质组合层，所述第二电介质组合层由高折射率透明电介质材料层和低折射率透明电介质材料层交替形成于所述第二阻挡层上；
顶层电介质组合层，所述顶层电介质组合层形成于所述第二电介质组合层上，所述顶层电介质组合层的折射率高于所述第一电介质组合层的折射率。
2.如权利要求1所述的一种单银低辐射玻璃，其特征在于，所述金属层材料为镍铬合金，该镍铬合金膜层厚度小于3nm。
3.如权利要求2所述的一种单银低辐射玻璃，其特征在于，所述金属层相邻两侧的透明电介质材料层的厚度比为1:1。
4.如权利要求3所述的一种单银低辐射玻璃，其特征在于，所述第一电介质组合层和所述第二电介质组合层的厚度比例为1:3.2。
5.如权利要求1所述的一种单银低辐射玻璃，其特征在于，所述底层电介质组合层的透明电介质材料层包括SiNx、SiAlNx中的一种或两种。
6.如权利要求5所述的一种单银低辐射玻璃，其特征在于，所述顶层电介质组合层包括NbZrOx、ZrOx、TiOx中的一种或多种。
7.如权利要求6所述的一种单银低辐射玻璃，其特征在于，所述第二电介质组合层的低折射率透明电介质材料层包括SiCNx、SiBNx、SiNx、SiAlNx中的一种或多种，所述第二电介质组合层的高折射率透明电介质材料层包括SiZrAlNx、SiZrNx、SiZrTiNx中的一种或多种。
8.如权利要求7所述的一种单银低辐射玻璃，其特征在于，所述第一阻挡层和所述第二阻挡层包括NiCr、NiCrOx、NiCrNx中的一种或多种。
9.一种单银低辐射玻璃的制备方法，其特征在于，包括：
S1、提供玻璃基底；
S2、在所述玻璃基底上采用中频电源加旋转阴极溅射沉积形成底层电介质组合层；
S3、在所述底层电介质组合层上采用中频电源加旋转阴极溅射沉积形成第一电介质组合层；
S4、在所述第一电介质组合层上采用直流电源加脉冲溅射沉积形成第一阻挡层；
S5、在所述第一阻挡层上采用直流双极脉冲电源溅射沉积形成银层；
S6、在所述银层上采用直流电源加脉冲溅射沉积形成第二阻挡层；
S7、在所述第二阻挡层上采用中频电源加旋转阴极溅射沉积形成第二电介质组合层；
S8、在所述第二电介质组合层上采用中频电源加旋转阴极溅射沉积形成顶层电介质组合层。
10.如权利要求9所述的一种单银低辐射玻璃的制备方法，其特征在于，所述第一阻挡层和所述第二阻挡层包括镍铬，所述底层电介质组合层包括镍铬金属层，在氩气氛围中采用直流双极脉冲电源溅射镍铬合金，功率为1.2kw-4.2kw。
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