CN112217527A - High density integrated dual frequency TR component - Google Patents
High density integrated dual frequency TR component Download PDFInfo
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- CN112217527A CN112217527A CN202011185185.XA CN202011185185A CN112217527A CN 112217527 A CN112217527 A CN 112217527A CN 202011185185 A CN202011185185 A CN 202011185185A CN 112217527 A CN112217527 A CN 112217527A
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- power supply
- control board
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
- H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
Abstract
The invention discloses a high-density integrated double-frequency TR component, which comprises a shell, wherein a W frequency band TR component and a Ku frequency band TR component are integrated in the shell in a double-frequency high-density integrated manner; the W-band TR component comprises a W-band chip and a W-band power supply and control board, and the W-band chip is connected with the W-band power supply and control board through gold wire bonding; the Ku frequency band TR component comprises a Ku frequency band chip and a Ku frequency band power supply and control board, wherein the Ku frequency band chip is connected with the Ku frequency band power supply and control board through a radio frequency microstrip line, and the Ku frequency band power supply and control board is in power supply and control board with a W frequency band through gold wire bonding. The high-density integrated dual-frequency TR component has the advantages of high integration level, small system volume and shared caliber.
Description
Technical Field
The invention relates to the field of TR components, in particular to a high-density integrated dual-frequency TR component.
Background
With the development of radar and communication technologies, antennas of phased array systems are attracting more and more attention and are widely used. And the TR component is a core component in the phased array antenna, and realizes multi-channel signal transmission from the antenna to signal processing. And the dual-frequency TR component is an essential core component in the dual-frequency phased array antenna system.
Take Ku and W band dual-band composite TR components as an example. The channel spacing of the TR elements cannot be set at will, and is generally very narrow, subject to the characteristics of phased array antennas. The difficulty in integrating dual band TR components is to integrate the two band TR components in a defined size.
The mainstream technology adopted at present:
at present, the mainstream adopts a scheme with separate structures, for example, TR components of Ku and W frequency bands are integrated respectively and placed at different positions, so that the advantage is that the respective TR components have sufficient space integration, and the disadvantage is that the separate TR components cause that the respective antennas can only be placed separately, and the antennas can not be designed with a common caliber, thereby greatly increasing the volume of the system, and the system can not bear in many cases.
Disclosure of Invention
In view of the above problems, the present invention provides a high-density integrated dual-frequency TR module, which has the advantages of high integration level, small system volume and shared aperture.
The technical scheme of the invention is as follows:
a high-density integrated double-frequency TR component comprises a shell, wherein a W-frequency band TR component and a Ku-frequency band TR component are integrated in the shell in a double-frequency high-density integrated mode; the W-band TR component comprises a W-band chip and a W-band power supply and control board, and the W-band chip is connected with the W-band power supply and control board through gold wire bonding; the Ku frequency band TR component comprises a Ku frequency band chip and a Ku frequency band power supply and control board, wherein the Ku frequency band chip is connected with the Ku frequency band power supply and control board through a radio frequency microstrip line, and the Ku frequency band power supply and control board is connected with the W frequency band power supply and control board through gold wire bonding.
In a further technical scheme, the casing includes casing and lower casing, W frequency channel TR subassembly is integrated in the upper casing, Ku frequency channel TR subassembly is integrated in the inferior valve internally, go up and be connected through interconnection connector and screw lock between casing and the lower casing, it is more convenient to connect and dismantle.
In a further technical scheme, the W frequency range TR component is a high-density SIP packaging integrated component and comprises a W frequency range SIP module, the W frequency range chip is integrated in the W frequency range SIP module, and the W frequency range power supply and control board is arranged on the outer side of the W frequency range SIP module.
The W frequency band TR component adopts a high-density SIP packaging integrated structure, so that the component integration level can be effectively improved, and the integrated size is reduced.
In a further technical scheme, the Ku frequency band TR component is a hybrid integrated component with a double-layer structure, the Ku frequency band chip is positioned at the bottom layer, and the Ku frequency band power supply and control board is positioned at the top layer.
And the Ku frequency band TR component adopts a double-layer structure design, so that the integration level can be improved, and the structure height is reduced.
In a further technical scheme, a W-band radio frequency input interface and a W-band radio frequency output interface are arranged on the upper shell.
In a further technical scheme, a Ku frequency band radio frequency input interface and a Ku frequency band radio frequency output interface are arranged on the lower shell.
The working principle of the technical scheme is as follows:
the invention adopts a double-frequency high-density integrated scheme, and the TR components of the W frequency band and the Ku frequency band are separately designed, the TR components of each layer are ultrathin, and then are combined into one TR component, wherein the W frequency band adopts a high-density SIP integrated scheme, all chips and circuits of the W frequency band are integrated into one SIP package, the integration level is improved, the integrated size is reduced, all W frequency band radio frequency chips are integrated in the SIP, and the W frequency band radio frequency chips are interconnected with an external power supply and control panel through gold wire bonding.
The Ku frequency channel adopts hybrid integration, and is divided into two-layer design with Ku frequency channel chip and Ku frequency channel power supply and control panel, can effectively improve its integrated level, has reduced the structure height, and Ku frequency channel chip is located the lower floor, connects through the radio frequency microstrip line, and Ku frequency channel power supply and control panel are located the upper strata, connect through the gold wire bonding.
And finally, the TR assemblies of the two frequency bands are assembled by adopting an interconnection connector and a structural screw to form a high-density integrated dual-frequency TR assembly, so that the integrated dual-frequency TR assembly has the advantages of high integration level, small system size and shared aperture, and solves the technical problems that the respective antennas can only be separately placed and cannot be designed with the shared aperture due to the adoption of the separated TR assemblies in the prior art, the volume of the system is greatly increased, and the system cannot bear in many cases.
The invention has the beneficial effects that:
1. the invention adopts a double-frequency high-density integrated scheme, firstly, TR components of two frequency bands of W and Ku are separately designed, and the TR components of each layer are ultrathin, and then are combined into one TR component, so that the integrated dual-frequency high-density integrated optical fiber cable has the advantages of high integration level, small system volume and shared caliber;
2. the upper shell and the lower shell are buckled and connected through the interconnection connector and the screws, so that the connection and the disassembly are more convenient;
3. the W-band TR component adopts a high-density SIP packaging integrated structure, so that the integration level of the component can be effectively improved, and the integration size is reduced;
4. and the Ku frequency band TR component adopts a double-layer structure design, so that the integration level can be improved, and the structure height is reduced.
Drawings
Fig. 1 is a schematic structural diagram of a W-band TR component according to an embodiment of the present invention;
fig. 2 is a schematic diagram of an internal structure of a W-band SIP module according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a TR component of the Ku frequency band according to an embodiment of the present invention.
Description of reference numerals:
10. a housing; 11. a W frequency band SIP module; 111. a W frequency band chip; 12. a W frequency band power supply and control panel; 13. a W-band radio frequency input interface; 14. a W-band radio frequency output interface; 21. a Ku frequency band chip; 22. a Ku frequency band power supply and control board; 23. a Ku frequency band radio frequency input interface; 24. and a Ku frequency band radio frequency output interface.
Detailed Description
The embodiments of the present invention will be further described with reference to the accompanying drawings.
Example (b):
as shown in fig. 1 to fig. 3, a high-density integrated dual-frequency TR assembly includes a housing 10, and a W-band TR assembly and a Ku-band TR assembly are integrated in the housing 10 in a dual-frequency high-density integrated manner; the W-band TR component comprises a W-band chip 111 and a W-band power supply and control board 12, wherein the W-band chip 111 is connected with the W-band power supply and control board 12 through gold wire bonding; the Ku frequency band TR component comprises a Ku frequency band chip 21 and a Ku frequency band power supply and control board 22, the Ku frequency band chip 21 is connected with the Ku frequency band power supply and control board 22 through a radio frequency microstrip line, and the Ku frequency band power supply and control board 22 is connected with the W frequency band power supply and control board 12 through gold wire bonding.
In another embodiment, the housing 10 includes an upper housing and a lower housing, the W band TR module is integrated in the upper housing, the Ku band TR module is integrated in the lower housing, and the upper housing and the lower housing are fastened and connected by an interconnecting connector and a screw, so that the connection and the detachment are more convenient.
In another embodiment, as shown in fig. 1 and fig. 2, the W-band TR module is a high-density SIP package integrated module, and includes a W-band SIP module 11, a W-band chip 111 is integrated in the W-band SIP module 11, and a W-band power supply and control board 12 is disposed outside the W-band SIP module 11.
The W frequency band TR component adopts a high-density SIP packaging integrated structure, so that the component integration level can be effectively improved, and the integrated size is reduced.
In another embodiment, as shown in fig. 3, the Ku band TR device is a hybrid integrated device with a two-layer structure, the Ku band chip 21 is located at the bottom layer, and the Ku band power supply and control board 22 is located at the top layer.
And the Ku frequency band TR component adopts a double-layer structure design, so that the integration level can be improved, and the structure height is reduced.
In another embodiment, as shown in fig. 1, a W-band rf input interface 13 and a W-band rf output interface 14 are disposed on the upper housing 10.
In another embodiment, as shown in fig. 3, a Ku band rf input interface 23 and a Ku band rf output interface 24 are provided on the lower housing 10.
The working principle of the technical scheme is as follows:
the invention adopts a double-frequency high-density integrated scheme, and the TR components of the W frequency band and the Ku frequency band are separately designed, the TR components of each layer are ultrathin, and then are combined into one TR component, wherein the W frequency band adopts a high-density SIP integrated scheme, all chips and circuits of the W frequency band are integrated into one SIP package, the integration level is improved, the integrated size is reduced, all W frequency band radio frequency chips are integrated in the SIP, and the W frequency band radio frequency chips are interconnected with an external power supply and control panel through gold wire bonding.
The Ku frequency channel adopts hybrid integration, and is divided into two-layer design with Ku frequency channel chip and Ku frequency channel power supply and control panel, can effectively improve its integrated level, has reduced the structure height, and Ku frequency channel chip is located the lower floor, connects through the radio frequency microstrip line, and Ku frequency channel power supply and control panel are located the upper strata, connect through the gold wire bonding.
And finally, the TR assemblies of the two frequency bands are assembled by adopting an interconnection connector and a structural screw to form a high-density integrated dual-frequency TR assembly, so that the integrated dual-frequency TR assembly has the advantages of high integration level, small system size and shared aperture, and solves the technical problems that the respective antennas can only be separately placed and cannot be designed with the shared aperture due to the adoption of the separated TR assemblies in the prior art, the volume of the system is greatly increased, and the system cannot bear in many cases.
The above-mentioned embodiments only express the specific embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention.
Claims (6)
1. A high-density integrated double-frequency TR component is characterized by comprising a shell, wherein a W frequency band TR component and a Ku frequency band TR component are integrated in the shell in a double-frequency high-density integrated mode; the W-band TR component comprises a W-band chip and a W-band power supply and control board, and the W-band chip is connected with the W-band power supply and control board through gold wire bonding; the Ku frequency band TR component comprises a Ku frequency band chip and a Ku frequency band power supply and control board, wherein the Ku frequency band chip is connected with the Ku frequency band power supply and control board through a radio frequency microstrip line, and the Ku frequency band power supply and control board is connected with the W frequency band power supply and control board through gold wire bonding.
2. The high-density integrated dual-band TR component of claim 1, wherein the housing comprises an upper housing and a lower housing, the W-band TR component is integrated in the upper housing, the Ku-band TR component is integrated in the lower housing, and the upper housing and the lower housing are connected through an interconnection connector and a screw in a buckling manner.
3. The high-density integrated dual-band TR component of claim 1, wherein the W-band TR component is a high-density SIP package integrated component comprising a W-band SIP module, the W-band chip is integrated in the W-band SIP module, and the W-band power supply and control board is disposed outside the W-band SIP module.
4. The high-density integrated dual-band TR assembly of claim 1, wherein the Ku band TR assembly is a hybrid integrated assembly of a two-layer structure, the Ku band chip is located on a bottom layer, and the Ku band power supply and control board is located on a top layer.
5. The high-density integrated dual-band TR assembly of claim 2, wherein the upper housing has a W-band rf input interface and a W-band rf output interface.
6. The high-density integrated dual-band TR assembly according to claim 2, wherein the lower housing has a Ku band radio frequency input interface and a Ku band radio frequency output interface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011185185.XA CN112217527A (en) | 2020-10-29 | 2020-10-29 | High density integrated dual frequency TR component |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011185185.XA CN112217527A (en) | 2020-10-29 | 2020-10-29 | High density integrated dual frequency TR component |
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| CN112217527A true CN112217527A (en) | 2021-01-12 |
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| CN202011185185.XA Pending CN112217527A (en) | 2020-10-29 | 2020-10-29 | High density integrated dual frequency TR component |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112994734A (en) * | 2021-02-10 | 2021-06-18 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | K-band radio frequency front-end four-channel antenna interface unit board |
| CN115275568A (en) * | 2022-07-29 | 2022-11-01 | 沈阳航盛科技有限责任公司 | Dual-frequency light integrated airborne satellite communication antenna equipment |
-
2020
- 2020-10-29 CN CN202011185185.XA patent/CN112217527A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112994734A (en) * | 2021-02-10 | 2021-06-18 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | K-band radio frequency front-end four-channel antenna interface unit board |
| CN115275568A (en) * | 2022-07-29 | 2022-11-01 | 沈阳航盛科技有限责任公司 | Dual-frequency light integrated airborne satellite communication antenna equipment |
| CN115275568B (en) * | 2022-07-29 | 2023-07-04 | 沈阳航盛科技有限责任公司 | Dual-frenquency light integration machine carries satellite communication antenna equipment |
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