CN114122675A - Expandable millimeter wave phased array unit, preparation method and active antenna array surface - Google Patents
Expandable millimeter wave phased array unit, preparation method and active antenna array surface Download PDFInfo
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- CN114122675A CN114122675A CN202111358366.2A CN202111358366A CN114122675A CN 114122675 A CN114122675 A CN 114122675A CN 202111358366 A CN202111358366 A CN 202111358366A CN 114122675 A CN114122675 A CN 114122675A
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000011521 glass Substances 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 190
- 238000003491 array Methods 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 6
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 8
- 230000003071 parasitic effect Effects 0.000 abstract description 6
- 230000010354 integration Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
The invention discloses an expandable millimeter wave phased-array unit, a preparation method and an active antenna array surface, which comprise a first layer of glass substrate, a second layer of glass substrate and a dielectric layer which are sequentially arranged from top to bottom, wherein a semiconductor device layer is arranged in the second layer of glass substrate; the antenna and the radio frequency active circuit are integrated together to form the on-chip antenna, and the quartz glass is used as the substrate of the antenna, so that the high-precision millimeter wave unit has the advantages of low dielectric constant, compatibility with a semiconductor process and the like, and meets the high-precision processing requirement of the millimeter wave unit; compared with the traditional antenna integration process, the distance between the antenna and the radio frequency front end is greatly shortened, parasitic parameters such as parasitic capacitance and the like introduced by a bonding wire for connecting the antenna and a circuit are reduced, and interconnection loss is reduced.
Description
Technical Field
The invention relates to the field of antennas, in particular to an expandable millimeter wave phased array unit, a preparation method and an active antenna array surface.
Background
At present, phased array radars are developing towards miniaturization, lightness, thinness and high integration, and especially under the condition of limited space, the traditional active antenna array surface has various defects. The antenna unit and the TR component of the traditional active antenna array surface transmit signals through radio frequency cables and other modes, the occupied size is large, the distance of a feeder line is long, the loss is large, the millimeter wave wavelength is short, the space between half-wavelength units of a millimeter wave phased array radar is difficult to realize in the traditional active antenna array surface packaging mode, and the antenna array surface is highly integrated and light and thin. And the traditional active antenna array surface is difficult to expand the number of array units, and when the number of antenna units is large, the cost is high, and the reliability is low.
In view of the above-mentioned drawbacks, the inventors of the present invention have finally obtained the present invention through a long period of research and practice.
Disclosure of Invention
In order to solve the technical defects, the invention adopts the technical scheme that an expandable millimeter wave phased-array unit is provided and comprises a first layer of glass substrate, a second layer of glass substrate and a dielectric layer which are sequentially arranged from top to bottom, wherein a semiconductor device layer is arranged in the second layer of glass substrate, a plurality of antenna units are arranged on the end face, away from the second layer of glass substrate, of the first layer of glass substrate, a plurality of BGA arrays are arranged on the end face, away from the second layer of glass substrate, of the dielectric layer, and the BGA arrays are connected with the semiconductor device layer and the antenna units.
Preferably, a plurality of glass substrates are further arranged between the first layer of glass substrate and the second layer of glass substrate.
Preferably, the thicknesses of the first layer of glass substrate, the second layer of glass substrate and the glass substrate are not less than 100 um.
Preferably, the dielectric layer is provided with a first dielectric layer and a second dielectric layer, two end faces of the second dielectric layer are respectively provided with a plurality of first redistribution layers and a plurality of second redistribution layers, and the first redistribution layers are arranged between the first dielectric layer and the second dielectric layer.
Preferably, the expandable millimeter wave phased-array unit is further provided with a TGV through hole, the TGV through hole penetrates through the first layer of glass substrate, the second layer of glass substrate and the dielectric layer, and two ends of the TGV through hole are respectively connected with the antenna unit and the second redistribution layer.
Preferably, a first via hole is formed in the first dielectric layer in a penetrating manner, a second via hole is formed in the second dielectric layer in a penetrating manner, two ends of the first via hole are respectively connected with the semiconductor device layer and the first redistribution layer, and two ends of the second via hole are respectively connected with the first redistribution layer and the second redistribution layer.
Preferably, be provided with in the second floor glass substrate and place the chamber, the semiconductor device layer sets up place the intracavity, the degree of depth of placing the chamber is greater than 100 um.
Preferably, the dielectric layer is made of silicon dioxide, polyimide and benzocyclobutene, and the single-layer thickness is 5-10 um.
Preferably, a method for manufacturing the scalable millimeter wave phased array unit includes the steps of:
s1, the TGV via is formed on the first glass layer;
s2, preparing the antenna unit on the first glass layer;
s3, the second glass layer is bonded with the first glass layer through bonding, the placing cavity is formed on the second glass layer, and the TGV through hole is formed on the second glass layer and is aligned with the TGV through hole on the first glass layer;
s4, placing the semiconductor layer into the placing cavity of the second glass layer, bonding the semiconductor layer and the first glass layer together, forming a first dielectric layer on the lower surface of the second glass layer, forming a via hole, and covering the surface of the semiconductor layer with the first dielectric layer;
and S5, forming the second dielectric layer, forming a via hole and a rewiring layer, connecting the pad of the semiconductor layer with the rewiring layer, and finally forming a BGA array on the lower surface of the second dielectric layer.
Preferably, the active antenna array surface comprises a plurality of the expandable millimeter wave phased array units, and each expandable millimeter wave phased array unit is attached to a PCB through the BGA array surface.
Compared with the prior art, the invention has the beneficial effects that: the antenna and the radio frequency active circuit are integrated together to form the on-chip antenna, and the quartz glass is used as the substrate of the antenna, so that the high-precision millimeter wave unit has the advantages of low dielectric constant, compatibility with a semiconductor process and the like, and meets the high-precision processing requirement of the millimeter wave unit; compared with the traditional antenna integration process, the distance between the antenna and the radio frequency front end is greatly shortened, parasitic parameters such as parasitic capacitance and the like introduced by a bonding wire for connecting the antenna and a circuit are reduced, and interconnection loss is reduced.
Drawings
Fig. 1 is a schematic structural diagram of the expandable millimeter wave phased array unit in step S1;
fig. 2 is a schematic structural diagram of the expandable millimeter wave phased array unit in step S2;
fig. 3 is a schematic structural diagram of the expandable millimeter wave phased array unit in step S3;
fig. 4 is a schematic structural diagram of the expandable millimeter wave phased array unit in step S4;
fig. 5 is a schematic structural diagram of the expandable millimeter wave phased array unit in step S5;
fig. 6 is a view of the structure of the active antenna array.
The figures in the drawings represent:
101-a second glass substrate; 102-a first layer of glass substrate; 103 a-a first dielectric layer; 103 b-a second dielectric layer; 104 a-a first antenna element; 104 b-a second antenna element; 104 c-a third antenna element; 104 d-a fourth antenna element; 105 a-a first BGA array; 105 b-a second BGA array; 130-a semiconductor device layer; 140-a via; 150-a rewiring layer; 301-PCB board.
Detailed Description
The above and further features and advantages of the present invention are described in more detail below with reference to the accompanying drawings.
Example one
The expandable millimeter wave phased-array unit comprises a first glass substrate layer 102, a second glass substrate layer 101, a first dielectric layer 103a and a second dielectric layer 103b which are sequentially arranged from top to bottom, a semiconductor device layer 130 is arranged in the second glass substrate layer 101, and a plurality of antenna units are arranged on the end face, away from the second glass substrate layer 101, of the first glass substrate layer 102.
The semiconductor device layer 130 (shown as an integrated circuit chip in fig. 1) is above the dielectric layer 103a, the first layer of glass 101 is above the second layer of glass 102, and the second layer of glass 101 is above the dielectric layer 103a, for embedding the semiconductor layer 130 in the second layer of glass 101.
In the present embodiment, the antenna elements include a first antenna element 104a, a second antenna element 104b, a third antenna element 104c, and a fourth antenna element 104d, and although only 4 antenna elements 104a to 104d are illustrated in the drawing, the number of antenna elements of the phased array element is actually greater than or less than 4.
Preferably, a plurality of glass substrates are further disposed between the first glass substrate 102 and the second glass substrate 101.
Be provided with in the second floor glass substrate 101 and place the chamber, semiconductor device layer 130 sets up place the intracavity, the degree of depth of placing the chamber is greater than 100um, in order to ensure semiconductor device layer 130 can bury in the second floor glass substrate 101.
The semiconductor device layer 130 includes active or passive chips.
The dielectric layer is made of silicon dioxide (Si02), Polyimide (PI), benzocyclobutene (BCB) or other common semiconductor materials with similar insulating functions, and the single-layer thickness of the dielectric layer is 5-10 um.
Preferably, the thickness of the layer of glass substrate, the thickness of the second layer of glass substrate and the thickness of the glass substrate are greater than 100 um.
A plurality of first redistribution layers and a plurality of second redistribution layers are respectively arranged on two end faces of the second dielectric layer 103b, and the first redistribution layers are arranged between the first dielectric layer 103a and the second dielectric layer 103 b.
The expandable millimeter wave phased-array unit is further provided with a TGV through hole, the TGV through hole penetrates through the first layer of glass substrate 102, the second layer of glass substrate 101, the first layer of dielectric layer 103a and the second layer of dielectric layer 103b, and two ends of the TGV through hole are respectively connected with the antenna unit and the second redistribution layer.
A first via hole is arranged on the first dielectric layer 103a in a penetrating manner, a second via hole is arranged on the second dielectric layer 103b in a penetrating manner, two ends of the first via hole are respectively connected with the semiconductor device layer 130 and the first rewiring layer, and two ends of the second via hole are respectively connected with the first rewiring layer and the second rewiring layer.
The second dielectric layer 103b is further provided with a BGA array.
The TGV penetrates the glass substrate, electrically connecting the chip pins with the antenna unit: and the rewiring layer leads out the chip pins, is connected with the antenna unit on one hand and is connected with the BGA array on the back side on the other hand.
Two TGV vias 120a and 120b connect antenna element 104a and antenna element 104d with redistribution layer 150. The TGV vias pass through both glass layers 101 and 102, and both dielectric layers 103a and 103 b.
Fig. 1 shows only the antenna elements 104a and 104d connected to the TGV vias, but in practice each antenna element would need to be connected to a TGV via and then to the redistribution layer 150. The semiconductor device layer 130 is connected to the redistribution layer 150 through the via 140. The vias 140 pass through the dielectric layers 103a and 103 b.
The dielectric layers 103a and 103b are made of silicon dioxide (Si02), Polyimide (PI), benzocyclobutene (BCB) or other common semiconductor materials with similar insulating functions, and the single-layer thickness is 5 to 10 um. The semiconductor layer 130 may be an integrated circuit chip, a passive device, an active device, or the like. Although fig. 1 shows only 1 semiconductor chip, the actual number of chips is 1 or more.
Each glass layer is approximately 100um thick and the lower surface of the first glass layer acts as a ground plane for the antenna element. The second glass layer 101 is etched to form a cavity for placing the semiconductor layer 130.
The invention has simple structure and low cost, can be manufactured in large scale, can realize the active antenna array surface with high precision and high consistency, and realizes the high-efficiency production of the phased array unit by utilizing the semiconductor process. The section thickness of the phased array unit is reduced, the minimum thickness of the whole phased array unit is only 0.3mm, and the miniaturization of the phased array unit is realized. The back surface of the phased array unit is led out of the input and output port through the BGA array, the traditional connector is replaced, the expandability of the phased array unit and the convenience of application are improved, the phased array unit and a rear-end PCB can be quickly integrated, and a large-scale active antenna array surface is formed. The quartz glass is used as the antenna substrate, and has the advantage of low dielectric constant, so that the antenna performance can be improved.
Example two
The preparation method of the expandable millimeter wave phased array unit comprises the following steps:
in the step shown in fig. 1, TGV vias 120a and 120b are formed on the first glass layer 102.
In the step shown in fig. 2, the antenna elements 104a to 104d are prepared above the first glass layer 102.
In the step shown in fig. 3, the second glass layer 102 is bonded to the first glass layer 101 by bonding and a cavity is formed in the second glass layer 101 and TGV vias 120a and 120b are formed in the second glass layer 101 and aligned with the TGV vias in the first glass layer.
In the step shown in fig. 4, the semiconductor layer 130 is placed in the cavity of the second glass layer 101 and adhered to the back of the first glass layer 102, and the dielectric layer 103a is formed on the lower surface of the second glass layer, and a via hole is etched at a position to be connected, and the surface of the semiconductor layer 130 is covered.
In the step shown in fig. 5, a dielectric layer 103b is formed, and via holes 140 and a redistribution layer 150 are formed to connect pads of the semiconductor device with the redistribution layer, and finally BGA arrays 105a and 105b are formed on the lower surface of 103 b.
Fig. 6 schematically shows a structural diagram of a scalable millimeter wave phased array element constituting a large-scale active front. The different expandable phased array units are attached to the PCB board 301 by the back BGA arrays 105a and 105b to form a large scale active front. The spacing of the different phased array elements needs to meet the array antenna element spacing requirements.
Further, the PCB 301 includes a power distribution network, a power interface, and the like.
The extensible phased array unit integrates the antenna and the radio frequency active circuit to form an on-chip antenna, and quartz glass is used as a substrate of the antenna, so that the extensible phased array unit has the advantages of low dielectric constant, compatibility with a semiconductor process and the like, and meets the high-precision processing requirement of the millimeter wave unit. Compared with the traditional antenna integration process, the distance between the antenna and the radio frequency front end is greatly shortened, parasitic parameters such as parasitic capacitance and the like introduced by a bonding wire for connecting the antenna and a circuit are reduced, and interconnection loss is reduced.
The foregoing is merely a preferred embodiment of the invention, which is intended to be illustrative and not limiting. It will be understood by those skilled in the art that various changes, modifications and equivalents may be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. The utility model provides an expanded millimeter wave phased array unit, its characterized in that includes first layer glass substrate, second floor glass substrate and the dielectric layer that from the top down set gradually, be provided with the semiconductor device layer in the second floor glass substrate, first layer glass substrate is kept away from set up a plurality of antenna element on the terminal surface of second floor glass substrate, the dielectric layer is kept away from be provided with a plurality of BGA arrays on the terminal surface of second floor glass substrate, the BGA array with the semiconductor device layer antenna element all connects.
2. The scalable millimeter-wave phased-array unit of claim 1, further comprising a plurality of glass substrates disposed between the first glass substrate and the second glass substrate.
3. The scalable millimeter-wave phased-array unit of claim 2, wherein the first layer of glass substrate, the second layer of glass substrate, and the glass substrate have a thickness of not less than 100 um.
4. The scalable millimeter wave phased array unit according to claim 1, wherein the dielectric layer is provided with a first dielectric layer and a second dielectric layer, both end surfaces of the second dielectric layer are respectively provided with a plurality of first redistribution layers and a plurality of second redistribution layers, and the first redistribution layers are disposed between the first dielectric layer and the second dielectric layer.
5. The scalable millimeter-wave phased-array unit according to claim 4, further provided with a TGV via penetrating the first glass substrate, the second glass substrate and the dielectric layer, and both ends of the TGV via are connected to one of the antenna units and one of the second redistribution layers, respectively.
6. The scalable millimeter wave phased array unit according to claim 5, wherein a first via hole is formed through the first dielectric layer, a second via hole is formed through the second dielectric layer, two ends of the first via hole are respectively connected to the semiconductor device layer and the first redistribution layer, and two ends of the second via hole are respectively connected to the first redistribution layer and the second redistribution layer.
7. The scalable millimeter-wave phased-array unit of claim 6, wherein a placement cavity is provided within the second layer of glass substrate, the semiconductor device layer being disposed within the placement cavity, the placement cavity having a depth greater than 100 um.
8. The scalable millimeter wave phased array unit according to claim 7, wherein the dielectric layer is made of silicon dioxide, polyimide, benzocyclobutene, and has a single layer thickness of 5-10 um.
9. A method of fabricating the scalable millimeter wave phased array unit according to claim 7, comprising the steps of:
s1, the TGV via is formed on the first glass layer;
s2, preparing the antenna unit on the first glass layer;
s3, the second glass layer is bonded with the first glass layer through bonding, the placing cavity is formed on the second glass layer, and the TGV through hole is formed on the second glass layer and is aligned with the TGV through hole on the first glass layer;
s4, placing the semiconductor layer into the placing cavity of the second glass layer, bonding the semiconductor layer and the first glass layer together, forming a first dielectric layer on the lower surface of the second glass layer, forming a via hole, and covering the surface of the semiconductor layer with the first dielectric layer;
and S5, forming the second dielectric layer, forming a via hole and a rewiring layer, connecting the pad of the semiconductor layer with the rewiring layer, and finally forming a BGA array on the lower surface of the second dielectric layer.
10. An active antenna array comprising a plurality of the scalable millimeter wave phased array units of any of claims 1 to 8, each of the scalable millimeter wave phased array units being surface mounted to a PCB board by the BGA array.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117543226A (en) * | 2024-01-05 | 2024-02-09 | 广东工业大学 | Phased array package antenna and manufacturing method thereof |
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2021
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117543226A (en) * | 2024-01-05 | 2024-02-09 | 广东工业大学 | Phased array package antenna and manufacturing method thereof |
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