CN114122675B - Expandable millimeter wave phased array unit, preparation method and active antenna array surface - Google Patents
Expandable millimeter wave phased array unit, preparation method and active antenna array surface Download PDFInfo
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- CN114122675B CN114122675B CN202111358366.2A CN202111358366A CN114122675B CN 114122675 B CN114122675 B CN 114122675B CN 202111358366 A CN202111358366 A CN 202111358366A CN 114122675 B CN114122675 B CN 114122675B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000003491 array Methods 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 210
- 239000004642 Polyimide Substances 0.000 claims description 6
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- 230000003071 parasitic effect Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
The invention discloses an expandable millimeter wave phased array unit, a preparation method and an active antenna array surface, which comprise a first layer of glass substrate, a second layer of glass substrate and a dielectric layer which are sequentially arranged from top to bottom, wherein a semiconductor device layer is arranged in the second layer of glass substrate, a plurality of antenna units are arranged on the end surface of the first layer of glass substrate, which is far away from the second layer of glass substrate, a plurality of BGA arrays are arranged on the end surface of the dielectric layer, which is far away from the second layer of glass substrate, and the BGA arrays are connected with the semiconductor device layer and the antenna units; the invention integrates the antenna and the radio frequency active circuit to form an on-chip antenna, adopts quartz glass as the substrate of the antenna, has the advantages of low dielectric constant, compatibility with semiconductor technology and the like, and meets the high-precision processing requirement of millimeter wave units; compared with the traditional antenna integration process, the distance between the antenna and the radio frequency front end is greatly shortened, parasitic parameters such as parasitic capacitance and the like introduced by bonding wires for connecting the antenna and the circuit are reduced, and interconnection loss is reduced.
Description
Technical Field
The invention relates to the field of antennas, in particular to an expandable millimeter wave phased array unit, a preparation method and an active antenna array surface.
Background
Currently, phased array radar is being developed towards miniaturization, light weight and high integration, and especially under the condition of limited space, the traditional active antenna array has various defects. The antenna units of the traditional active antenna array surface and the TR component and the like perform signal transmission in a radio frequency cable and other modes, the occupied volume is large, the feeder line distance is long, the loss is large, the millimeter wave wavelength is short, the half-wavelength unit spacing of the millimeter wave phased array radar is difficult to realize in the traditional active antenna array surface packaging mode, and the antenna array surface is highly integrated and light and thin. And the traditional active antenna array surface is difficult to expand the number of array units, and when the number of the antenna units is large, the cost is high and the reliability is low.
In view of the above drawbacks, the present inventors have finally achieved the present invention through long-time studies and practices.
Disclosure of Invention
In order to solve the technical defects, the technical scheme adopted by the invention is that the expandable millimeter wave phased array unit comprises a first layer of glass substrate, a second layer of glass substrate and a medium layer which are sequentially arranged from top to bottom, a semiconductor device layer is arranged in the second layer of glass substrate, a plurality of antenna units are arranged on the end face, far away from the second layer of glass substrate, of the first layer of glass substrate, a plurality of BGA arrays are arranged on the end face, far away from the second layer of glass substrate, of the medium layer, and the BGA arrays are connected with the semiconductor device layer and the antenna units.
Preferably, a plurality of layers of glass substrates are further arranged between the first layer of glass substrate and the second layer of glass substrate.
Preferably, the thicknesses of the first layer glass substrate, the second layer glass substrate and the glass substrate are not less than 100um.
Preferably, the dielectric layer is provided with a first dielectric layer and a second dielectric layer, two end surfaces of the second dielectric layer are respectively provided with a plurality of first rewiring layers and a plurality of second rewiring layers, and the first rewiring layers are arranged between the first dielectric layer and the second dielectric layer.
Preferably, the expandable millimeter wave phased array unit is further provided with a TGV through hole, the TGV through hole penetrates through the first layer glass substrate, the second layer glass substrate and the dielectric layer, and two ends of the TGV through hole are respectively connected with the antenna unit and the second redistribution layer.
Preferably, a first via hole is formed in the first dielectric layer in a penetrating manner, a second via hole is formed in the second dielectric layer in a penetrating manner, two ends of the first via hole are respectively connected with the semiconductor device layer and the first rewiring layer, and two ends of the second via hole are respectively connected with the first rewiring layer and the second rewiring layer.
Preferably, a placing cavity is arranged in the second layer of glass substrate, the semiconductor device layer is arranged in the placing cavity, and the depth of the placing cavity is larger than 100um.
Preferably, the dielectric layer adopts silicon dioxide, polyimide and benzocyclobutene, and the thickness of a single layer is 5-10 um.
Preferably, the preparation method of the expandable millimeter wave phased array unit comprises the following steps:
s1, forming a TGV via hole on the first glass layer;
s2, preparing the antenna unit on the first glass layer;
S3, bonding the second glass layer and the first glass layer together through bonding, forming the placing cavity on the second glass layer, and forming the TGV via hole on the second glass layer and aligning with the TGV via hole on the first glass layer;
S4, placing the semiconductor layer into a placing cavity of the second glass layer, bonding the semiconductor layer and the first glass layer together, and fixing the semiconductor layer, wherein a first dielectric layer is formed on the lower surface of the second glass layer, a via hole is formed on the first dielectric layer, and the surface of the semiconductor layer is covered by the first dielectric layer;
s5, forming the second dielectric layer, forming a via hole and a rerouting layer, connecting a bonding pad of the semiconductor layer with the rerouting layer, and finally forming a BGA array on the lower surface of the second dielectric layer.
Preferably, the active antenna array surface comprises a plurality of expandable millimeter wave phased array units, and each expandable millimeter wave phased array unit is attached to a PCB board through the BGA array list.
Compared with the prior art, the invention has the beneficial effects that: the invention integrates the antenna and the radio frequency active circuit to form an on-chip antenna, adopts quartz glass as the substrate of the antenna, has the advantages of low dielectric constant, compatibility with semiconductor technology and the like, and meets the high-precision processing requirement of millimeter wave units; compared with the traditional antenna integration process, the distance between the antenna and the radio frequency front end is greatly shortened, parasitic parameters such as parasitic capacitance and the like introduced by bonding wires for connecting the antenna and the circuit are reduced, and interconnection loss is reduced.
Drawings
Fig. 1 is a schematic structural diagram of the expandable millimeter wave phased array unit in step S1;
fig. 2 is a schematic structural diagram of the expandable millimeter wave phased array unit in step S2;
fig. 3 is a schematic structural diagram of the expandable millimeter wave phased array unit in step S3;
fig. 4 is a schematic structural diagram of the expandable millimeter wave phased array unit in step S4;
fig. 5 is a schematic structural diagram of the expandable millimeter wave phased array unit in step S5;
Fig. 6 is a structural view of the active antenna array plane.
The figures represent the numbers:
101-a second layer glass substrate; 102-a first layer glass substrate; 103 a-a first dielectric layer; 103 b-a second dielectric layer; 104 a-a first antenna element; 104 b-a second antenna element; 104 c-a third antenna element; 104 d-a fourth antenna element; 105 a-a first BGA array; 105 b-a second BGA array; 130-a semiconductor device layer; 140-via holes; 150-a rewiring layer; 301-PCB board.
Detailed Description
The above and further technical features and advantages of the present invention are described in more detail below with reference to the accompanying drawings.
Example 1
The expandable millimeter wave phased array unit comprises a first layer of glass substrate 102, a second layer of glass substrate 101, a first layer of dielectric layer 103a and a second layer of dielectric layer 103b which are sequentially arranged from top to bottom, a semiconductor device layer 130 is arranged in the second layer of glass substrate 101, and a plurality of antenna units are arranged on the end face, far away from the second layer of glass substrate 101, of the first layer of glass substrate 102.
The semiconductor device layer 130 (shown as an integrated circuit chip in fig. 1) is above the dielectric layer 103a, the first glass layer 101 is above the second glass layer 102, and the second glass layer 101 is above the dielectric layer 103a, for embedding the semiconductor layer 130 in the second glass layer 101.
In this embodiment, the antenna units include a first antenna unit 104a, a second antenna unit 104b, a third antenna unit 104c, and a fourth antenna unit 104d, and although only 4 antenna units 104a to 104d are shown in the drawing, the number of antenna units of the phased array unit is actually greater than or less than 4.
Preferably, a plurality of glass substrates are further disposed between the first glass substrate 102 and the second glass substrate 101.
A placing cavity is arranged in the second layer glass substrate 101, the semiconductor device layer 130 is arranged in the placing cavity, and the depth of the placing cavity is larger than 100um, so that the semiconductor device layer 130 can be buried in the second layer glass substrate 101.
The semiconductor device layer 130 includes an active or passive chip.
The dielectric layer is made of silicon dioxide (Si 02), polyimide (PI), benzocyclobutene (BCB) or other semiconductor common materials with similar insulating functions, and the thickness of a single layer is 5-10 um.
Preferably, the thickness of the one layer of glass substrate, the second layer of glass substrate and the glass substrate is greater than 100um.
Two end surfaces of the second dielectric layer 103b are respectively provided with a plurality of first redistribution layers and a plurality of second redistribution layers, and the first redistribution layers are arranged between the first dielectric layer 103a and the second dielectric layer 103 b.
The expandable millimeter wave phased array unit is further provided with a TGV through hole, the TGV through hole penetrates through the first layer glass substrate 102, the second layer glass substrate 101, the first layer dielectric layer 103a and the second layer dielectric layer 103b, and two ends of the TGV through hole are respectively connected with the antenna unit and the second rewiring layer.
The first dielectric layer 103a is provided with a first via hole in a penetrating manner, the second dielectric layer 103b is provided with a second via hole in a penetrating manner, two ends of the first via hole are respectively connected with the semiconductor device layer 130 and the first redistribution layer, and two ends of the second via hole are respectively connected with the first redistribution layer and the second redistribution layer.
And the second dielectric layer 103b is also provided with a BGA array.
TGV passes through the glass substrate, electrically connects the chip pins with the antenna elements: and the rewiring layer is used for leading out the pins of the chip, and is connected with the antenna unit on one hand and the BGA array on the back side on the other hand.
Two TGV vias 120a and 120b connect antenna element 104a and antenna element 104d with rewiring layer 150. The TGV via passes through both glass layers 101 and 102, and both dielectric layers 103a and 103b.
Only the antenna elements 104a and 104d are shown connected to the TGV via in fig. 1, but in practice each antenna element needs to be connected to the TGV via and then to the rewiring layer 150. The semiconductor device layer 130 is connected to the redistribution layer 150 through the via 140. The via 140 passes through the dielectric layers 103a and 103b.
Dielectric layer 103a is under second glass layer 101 and completely covers semiconductor device layer 130, and dielectric layer 103b is under dielectric layer 103 a. Although fig. 1 shows only two dielectric layers 103a and 103b, the actual number of dielectric layers is 1 layer or more. BGA arrays 105a and 105b are connected to redistribution layer 150 and to the semiconductor device layer through vias 140 as input and output ports for the phased array unit. Although fig. 1 shows only 2 first BGA arrays 105a and second BGA arrays 105b, the actual number of BGAs is determined by the number of input/output ports of the phased array unit.
The material of the dielectric layer 103a and the dielectric layer 103b is silicon dioxide (Si 02), polyimide (PI), benzocyclobutene (BCB) or other semiconductor common materials with similar insulating function, and the single layer thickness is 5 to 10um. The semiconductor layer 130 may be an integrated circuit chip, a passive device, an active device, or the like. Although fig. 1 shows only 1 semiconductor chip, the actual number of chips is 1 or more.
Each layer of glass has a thickness of about 100um and the lower surface of the first glass layer acts as the ground layer for the antenna element. The second glass layer 101 is etched out of the cavity for placing the semiconductor layer 130.
The invention has simple structure and low cost, can be manufactured in a large scale, can realize the active antenna array surface with high precision and high consistency, and realizes the high-efficiency production of the phased array unit by utilizing a semiconductor process. The section thickness of the phased array unit is reduced, the whole thickness is only 0.3mm at the minimum, and the miniaturization of the phased array unit is realized. The back is led out of the input/output port through the BGA array, replaces the traditional connector, improves the expandability and the application convenience of the phased array unit, and can be rapidly integrated with a back-end PCB board to form a large-scale active antenna array surface. The quartz glass is used as an antenna substrate, has the advantage of low dielectric constant, and can improve the antenna performance.
Example two
The preparation method of the expandable millimeter wave phased array unit comprises the following steps:
In the step shown in fig. 1, TGV vias 120a and 120b are formed on the first glass layer 102.
In the step shown in fig. 2, antenna elements 104a to 104d are prepared above the first glass layer 102.
In the step shown in fig. 3, the second glass layer 102 is bonded to the first glass layer 101 by bonding and cavities are formed in the second glass layer 101, and TGV vias 120a and 120b are formed in the second glass layer 101 and aligned with the TGV vias in the first glass layer.
In the step shown in fig. 4, the semiconductor layer 130 is placed in the cavity of the second glass layer 101 and bonded to the back surface of the first glass layer 102, and the dielectric layer 103a is formed on the lower surface of the second glass layer, and the via hole is etched at the position where connection is required, and covers the surface of the semiconductor layer 130.
In the step shown in fig. 5, dielectric layer 103b is formed and via 140 and redistribution layer 150 are formed, bonding pads of the semiconductor device are connected to the redistribution layer, and finally BGA arrays 105a and 105b are formed on the lower surface of 103 b.
Fig. 6 schematically shows a schematic structural diagram of a large-scale active array surface composed of an expandable millimeter wave phased array unit. Different expandable phased array units are surface-mounted on the PCB 301 through BGA arrays 105a and 105b on the back side to form a large-scale active array surface. The spacing of the different phased array elements is required to meet the array antenna element spacing requirements.
Further, the PCB 301 includes a power distribution network, a power interface, and the like.
The expandable phased array unit integrates the antenna and the radio frequency active circuit to form an on-chip antenna, and quartz glass is used as a substrate of the antenna, so that the expandable phased array unit has the advantages of low dielectric constant, compatibility with a semiconductor process and the like, and meets the high-precision processing requirement of the millimeter wave unit. Compared with the traditional antenna integration process, the distance between the antenna and the radio frequency front end is greatly shortened, parasitic parameters such as parasitic capacitance and the like introduced by bonding wires for connecting the antenna and the circuit are reduced, and interconnection loss is reduced.
The foregoing description of the preferred embodiment of the invention is merely illustrative of the invention and is not intended to be limiting. It will be appreciated by persons skilled in the art that many variations, modifications, and even equivalents may be made thereto without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (9)
1. The expandable millimeter wave phased array unit is characterized by comprising a first layer of glass substrate, a second layer of glass substrate and a medium layer which are sequentially arranged from top to bottom, wherein a semiconductor device layer is arranged in the second layer of glass substrate, a plurality of antenna units are arranged on the end face, far away from the second layer of glass substrate, of the first layer of glass substrate, a plurality of BGA arrays are arranged on the end face, far away from the second layer of glass substrate, of the medium layer, the BGA arrays are connected with the semiconductor device layer and the antenna units, and the medium layer is provided with a first medium layer and a second medium layer;
the preparation method of the expandable millimeter wave phased array unit comprises the following steps:
s1, forming a TGV via hole on the first layer of glass substrate;
S2, preparing the antenna unit on the first layer of glass substrate;
S3, bonding the second layer glass substrate and the first layer glass substrate together through bonding, forming a placing cavity on the second layer glass substrate, and forming a TGV via hole on the second layer glass substrate and aligning with the TGV via hole on the first layer glass substrate;
S4, placing the semiconductor device layer into a placing cavity of the second-layer glass substrate, bonding the semiconductor device layer with the first-layer glass substrate, and fixing the semiconductor device layer, wherein a first dielectric layer is formed on the lower surface of the second-layer glass substrate, a via hole is formed on the first dielectric layer, and the surface of the semiconductor device layer is covered by the first dielectric layer;
S5, forming the second dielectric layer, forming a via hole and a rerouting layer, connecting a bonding pad of the semiconductor device layer with the rerouting layer, and finally forming a BGA array on the lower surface of the second dielectric layer.
2. The expandable millimeter wave phased array unit of claim 1, wherein a plurality of layers of glass substrates are further disposed between the first layer of glass substrate and the second layer of glass substrate.
3. The expandable millimeter wave phased array unit of claim 2, wherein the thickness of the first layer glass substrate, the second layer glass substrate, and the glass substrate is not less than 100um.
4. The expandable millimeter wave phased array unit of claim 1, wherein the second dielectric layer is provided with a plurality of first rewiring layers and a plurality of second rewiring layers at both end surfaces thereof, respectively, the first rewiring layers being disposed between the first dielectric layer and the second dielectric layer.
5. The expandable millimeter-wave phased array unit of claim 4, further provided with TGV vias penetrating through the first glass substrate, the second glass substrate and the dielectric layer, and having two ends connected to the antenna unit and the second redistribution layer, respectively.
6. The expandable millimeter wave phased array unit of claim 5, wherein a first via is disposed through the first dielectric layer, a second via is disposed through the second dielectric layer, two ends of the first via are respectively connected to the semiconductor device layer and the first redistribution layer, and two ends of the second via are respectively connected to the first redistribution layer and the second redistribution layer.
7. The expandable millimeter wave phased array unit of claim 6, wherein a placement cavity is disposed within the second layer of glass substrate, the semiconductor device layer being disposed within the placement cavity, the placement cavity having a depth greater than 100um.
8. The expandable millimeter wave phased array unit of claim 7, wherein the dielectric layer is silicon dioxide, polyimide, benzocyclobutene, and the thickness of the single layer is 5um to 10um.
9. An active antenna array surface comprising a plurality of expandable millimeter wave phased array units as claimed in any one of claims 1 to 8, each of said expandable millimeter wave phased array units being attached to a PCB board by said BGA array list.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111358366.2A CN114122675B (en) | 2021-11-15 | 2021-11-15 | Expandable millimeter wave phased array unit, preparation method and active antenna array surface |
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| CN202111358366.2A CN114122675B (en) | 2021-11-15 | 2021-11-15 | Expandable millimeter wave phased array unit, preparation method and active antenna array surface |
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| CN108494430A (en) * | 2018-03-21 | 2018-09-04 | 北京理工雷科雷达技术研究院有限公司 | A kind of miniaturization mm wave RF front end |
| CN110534924A (en) * | 2019-08-16 | 2019-12-03 | 维沃移动通信有限公司 | Antenna modules and electronic equipment |
| CN111276787A (en) * | 2019-12-31 | 2020-06-12 | 中国电子科技集团公司第五十五研究所 | Three-dimensional integrated millimeter wave AiP phased array element |
| CN216251116U (en) * | 2021-11-15 | 2022-04-08 | 中国电子科技集团公司第三十八研究所 | Expandable millimeter wave phased array unit and active antenna array surface |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10211169B2 (en) * | 2014-05-27 | 2019-02-19 | University Of Florida Research Foundation, Inc. | Glass interposer integrated high quality electronic components and systems |
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| CN108494430A (en) * | 2018-03-21 | 2018-09-04 | 北京理工雷科雷达技术研究院有限公司 | A kind of miniaturization mm wave RF front end |
| CN110534924A (en) * | 2019-08-16 | 2019-12-03 | 维沃移动通信有限公司 | Antenna modules and electronic equipment |
| CN111276787A (en) * | 2019-12-31 | 2020-06-12 | 中国电子科技集团公司第五十五研究所 | Three-dimensional integrated millimeter wave AiP phased array element |
| CN216251116U (en) * | 2021-11-15 | 2022-04-08 | 中国电子科技集团公司第三十八研究所 | Expandable millimeter wave phased array unit and active antenna array surface |
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