CN112216747A - Heterojunction solar cell and preparation method and application thereof - Google Patents

Heterojunction solar cell and preparation method and application thereof Download PDF

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CN112216747A
CN112216747A CN202011003906.0A CN202011003906A CN112216747A CN 112216747 A CN112216747 A CN 112216747A CN 202011003906 A CN202011003906 A CN 202011003906A CN 112216747 A CN112216747 A CN 112216747A
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tco
film
ito
film layer
iii
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CN112216747B (en
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陈明飞
刘永成
江长久
陈明高
徐胜利
王志杰
郭梓旋
莫国仁
李跃辉
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Enam Optoelectronic Material Co ltd
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Enam Optoelectronic Material Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a heterojunction solar cell and a preparation method and application thereof, and the heterojunction solar cell comprises a TCO-I film layer, a TCO-II film layer, an N-type amorphous silicon layer, a first intrinsic amorphous silicon layer, an N-type substrate, a second intrinsic amorphous silicon layer, a P-type amorphous silicon layer, a TCO-III film layer and a TCO-IV film layer which are sequentially stacked; the work function of the TCO-II film layer is higher than that of the TCO-I film layer, and the work function of the TCO-IV film layer is higher than that of the TCO-III film layer. The heterojunction solar cell with the structure can effectively improve the contact resistance of the heterojunction solar cell, and solves the problem of high contact resistance between different types of interfaces in the traditional heterojunction solar cell.

Description

Heterojunction solar cell and preparation method and application thereof
Technical Field
The invention relates to the technical field of solar cells, in particular to a heterojunction solar cell and a preparation method and application thereof.
Background
Solar cells, also known as "solar chips" or "photovoltaic cells", are semiconductor sheets made of the photovoltaic properties of a particular material. The working principle is as follows: black bodies (e.g., the sun) emit electromagnetic waves (e.g., infrared, ultraviolet, visible, etc.) of different wavelengths, and when these electromagnetic waves impinge on different conductors or semiconductors, photons interact with free electrons in the conductors or semiconductors to generate electric current. The solar cell power generation is a reproducible environment-friendly power generation mode, and greenhouse gases such as carbon dioxide and the like are not generated in the power generation process, so that the environment is not polluted, and the solar cell power generation has a wide application prospect.
Solar cells can be classified into silicon-based semiconductor cells, CdTe thin film cells, copper indium gallium tin (CIGS) thin film cells, dye-sensitized thin film cells, organic material cells, and the like, according to the fabrication materials. Among them, Heterojunction cells (HIT) in silicon-based semiconductor cells are receiving more and more attention due to their advantages such as high efficiency conversion and double-sided power generation, and become one of the most likely technologies for large-scale application in the future. The HIT is a cell structure which adds a layer of non-doped (intrinsic) hydrogenated amorphous silicon thin film between P-type hydrogenated amorphous silicon and N-type hydrogenated amorphous silicon and an N-type substrate. The standard crystalline silicon solar cell is a homojunction cell, i.e. a PN junction is formed on the same semiconductor material. It has been found, however, that the conversion efficiency of a heterojunction cell using PN junctions made of different semiconductor materials can be significantly improved.
A typical structure of a heterojunction HIT solar cell in the prior art is shown in figure 1, an N-type monocrystalline silicon wafer is taken as an N-type substrate 1, and a first intrinsic amorphous silicon layer 21(i-a-Si: H thin film) and an N-type amorphous silicon layer 22(N-a-Si: H thin film) are sequentially deposited on the front surface of N-type c-Si subjected to cleaning and texturing, so that a p-N heterojunction is formed. A back surface field is formed on the back surface of the silicon wafer by the second intrinsic amorphous silicon layer 31(i-a-Si: H film) and the P-type amorphous silicon layer 32(P-a-Si: H film) in sequence. Depositing Transparent Conductive Oxide (TCO) films on two sides of the film doped with the a-Si and the H, and finally forming metal collectors on the top layers on the two sides by a screen printing technology. In order to better collect and conduct the current, a TCO film with a thickness of about 100nm is usually deposited on the N-type amorphous silicon and the P-type amorphous silicon of the cell. Currently, the most widely used TCO material is Indium Tin Oxide (ITO), wherein the common composition of ITO material is 90:10 (i.e. In)2O3:SnO2The component ratio is 90% to 10% by mass percent.
The TCO has a contact interface with the amorphous silicon layer and the metal silver electrode, and the contact resistance is too large due to the mismatch or poor match of work functions between different film layers. In order to improve the problem, partial research shows that the film structure can be optimized by selecting TCO materials with different work functions to match different types of amorphous silicon films and metal silver electrodes in the heterojunction cell structure, so that the contact resistance is reduced, the short-circuit current and the filling factor of the heterojunction cell are optimized, and the conversion efficiency of the heterojunction cell is improved. At present, the conversion efficiency of the HIT heterojunction solar cell is closer to the theoretical conversion efficiency, and therefore, it is a significant progress to improve the conversion efficiency by 0.01%. However, every 0.01% improvement in conversion efficiency still produces a great economic value for industrial application of solar cells, and therefore, researchers are still improving the structure of solar cells to further improve the conversion efficiency.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a heterojunction solar cell, and the cell structure can effectively improve the contact resistance of the heterojunction solar cell.
The invention also provides a preparation method of the battery.
The invention also provides an application of the battery.
The heterojunction solar cell comprises a TCO-I film layer, a TCO-II film layer, an N-type amorphous silicon layer, a first intrinsic amorphous silicon layer, an N-type substrate, a second intrinsic amorphous silicon layer, a P-type amorphous silicon layer, a TCO-III film layer and a TCO-IV film layer which are sequentially stacked;
the work function of the TCO-II film layer is higher than that of the TCO-I film layer, and the work function of the TCO-IV film layer is higher than that of the TCO-III film layer.
According to some embodiments of the invention, the TCO-I and TCO-III film layers are made of materials selected from Indium Tin Oxide (ITO); wherein the mass percentage of the tin oxide in the ITO is 10%.
According to some embodiments of the invention, the thickness of each of the TCO-I film layer and the TCO-III film layer is 5-30 nm; preferably 5 to 20 nm.
According to some embodiments of the invention, the work function of the materials from which the TCO-II film layer and TCO-IV film layer are made is not less than 4.7 eV.
According to some embodiments of the invention, the TCO-II film layer and the TCO-IV film layer are respectively and independently prepared from at least one of Indium Zinc Oxide (IZO), Indium Zirconium Oxide (IZO) and ITO (99: 1-97: 3); wherein the ITO (99: 1-97: 3) material is 1-3% of tin oxide by mass percentage.
According to some embodiments of the invention, the thickness of the TCO-II film layer and the TCO-IV film layer is 70-130 nm, preferably 80-95 nm.
According to some embodiments of the invention, the heterojunction solar cell further comprises metal electrodes respectively disposed on the surfaces of the TCO-I film layer and the TCO-IV film layer.
The heterojunction solar cell according to the embodiment of the invention has at least the following beneficial effects: the heterojunction solar cell with the structure can effectively improve the contact resistance of the heterojunction solar cell, and solves the problem of high contact resistance between different types of interfaces in the traditional heterojunction solar cell. According to the scheme, TCO materials with different work functions are selected to match with amorphous silicon film layers and metal electrodes of different types in the heterojunction cell structure so as to optimize the film layer structure, so that the contact resistance is reduced, and the conversion efficiency of the heterojunction cell is integrally improved. Specifically, the high-work-function film layer and the low-work-function film layer are sequentially arranged on the N pole, so that the contact resistance between the TCO film and the N pole of the N pole and between the TCO film and the metal electrode is reduced, and the problem that the N pole electrode effectively migrates towards the metal electrode is promoted; the low-work-function film layer and the high-work-function film layer are sequentially arranged on the P pole, so that the contact resistance between the TCO film layer and the P pole of the P pole and between the TCO film layer and the metal electrode is reduced, and the problem of effective migration of a cavity of the P pole to the metal electrode is promoted.
The preparation method according to the second aspect embodiment of the present invention comprises the steps of:
s1, forming a first intrinsic amorphous silicon layer and an N-type amorphous silicon layer on one side of the textured N-type substrate from inside to outside in sequence by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, and forming a second intrinsic amorphous silicon layer and a P-type amorphous silicon layer on the other side of the textured N-type substrate from inside to outside in sequence;
s2, sequentially forming a TCO-I film layer and a TCO-II film layer on the surface of the N-type amorphous silicon layer, and sequentially forming a TCO-III film layer and a TCO-IV film layer on the surface of the P-type amorphous silicon layer.
The preparation method according to the embodiment of the invention has at least the following beneficial effects: the preparation method of the scheme of the invention is simple and convenient to operate and is suitable for large-scale industrial application.
According to an application of the embodiment of the third aspect of the present invention, a power generation system comprises the above-mentioned heterojunction solar cell.
The application of the embodiment of the invention has at least the following beneficial effects: the solar cell provided by the embodiment of the invention has high energy conversion efficiency and good application prospect.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
FIG. 1 is a schematic diagram of a solar cell in the prior art;
fig. 2 is a schematic structural diagram of a solar cell according to an embodiment of the invention.
Description of reference numerals:
1. an N-type substrate;
21. a first intrinsic amorphous silicon layer; 22. an N-type amorphous silicon layer; 23. a TCO-II film layer; 24. a TCO-I film layer;
31. a second intrinsic amorphous silicon layer; 32. a P-type amorphous silicon layer; 33. a TCO-III film layer; 34. a TCO-IV film layer;
4. and a metal electrode.
Detailed Description
In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments. The parameters in the examples and comparative examples of the present invention, which are not specifically described, are set according to the conventional parameters in the art, and are at the same level. The blue films after being plated with the amorphous silicon thin films by the texturing and the PECVD adopted in the embodiment and the comparative example are the textured N-type substrate 1 (silicon substrate) prepared by the conventional process under the same condition, wherein a first intrinsic amorphous silicon layer 21(i-a-Si: H thin film) and an N-type amorphous silicon layer 22(N-a-Si: H thin film) are sequentially formed on one side from inside to outside and a second intrinsic amorphous silicon layer 31(i-a-Si: H thin film) and a P-type amorphous silicon layer 32(P-a-Si: H thin film) are sequentially formed on the other side from inside to outside through a Plasma Enhanced Chemical Vapor Deposition (PECVD).
On the N pole (front face), the TCO film layer is in contact with the N-type amorphous silicon film layer, belonging to the contact between a semiconductor and a semiconductor, and the TCO film is in contact with the metal electrode, belonging to the contact between the semiconductor and metal; contact resistance occurs between these two interfaces when the work function of the materials is mismatched. On the P pole (the reverse side), the TCO film layer is in contact with the P-type amorphous silicon film layer, belonging to the contact between a semiconductor and a semiconductor, and the TCO film is in contact with the metal electrode, belonging to the contact between the semiconductor and the metal; contact resistance occurs between these two interfaces when the work function of the materials is mismatched.
For the situation of the contact resistance which is not beneficial to current derivation and is generated between the contact surfaces made of different materials, the design of the heterojunction battery material and the structure of the invention is shown in fig. 2, and the specific scheme is as follows:
the N pole (the front side of the battery) is used as an electronic output end and is opposite to the direction of the built-in electric field. If the electrons need to be output in time, the corresponding contact resistance needs to be small, when the two semiconductors are contacted, the electrons at the end with the low work function can migrate to the end with the high work function correspondingly, and the TCO material with the high work function needs to be selected to facilitate the migration of the electrons from the N-type amorphous silicon film layer to the TCO film layer; meanwhile, the contact resistance between the semiconductor and the metal electrode 4 requires that the metal has a relatively high work function or the semiconductor has a relatively low work function, which facilitates the migration of electrons to the metal electrode 4. Therefore, the TCO-II film layer 23 in contact with the N-type amorphous silicon film layer realizes the electron energy transfer of the N-type amorphous silicon film layer to the TCO-II film layer 23 by selecting the TCO film layer with the work function as high as possible, and meanwhile, the TCO-II film layer 23 has good transmittance and conductivity, so that the light attenuation loss caused by poor transmittance and the increase of loss current caused by resistance caused by poor conductivity are avoided. The TCO-II film layer 23 is preferably made of IZO, ITO (99:1), ITO (98:2), ITO (97:3) and the like, and for ITO materials, the smaller the tin oxide content is, the higher the work function is, so that ITO materials with low tin oxide content should be selected when the TCO-II layer is manufactured; as the TCO-II film layer 23 is a film with a higher work function, if the TCO-II is directly contacted with the metal electrode 4, the work function of the TCO-II relative to the metal silver electrode is higher, so that the electron transfer is hindered. At this time, a TCO-I film layer 24 with the lowest work function is manufactured between the TCO-II and the metal electrode 4, so that the TCO-I and the metal electrode 4 are relatively low in work function, electron transfer is facilitated, and the contact resistance of the TCO film layer and the metal electrode 4 is reduced. For ITO materials with different tin oxide contents, the higher the tin oxide content, the smaller the work function, but the maximum solid solution amount of tin oxide in indium oxide is 10% (weight ratio), and the larger the tin oxide content of the ITO film layer is, the work function cannot be effectively reduced, so that the ITO-I film layer 24 is preferably made of Indium Tin Oxide (ITO) with the tin oxide content of ITO of 10% (weight ratio). As the TCO-I film layer 24 serves as a connecting layer, the TCO-I film layer is made of ITO materials with the mass ratio of 90:10, and the higher the tin oxide content of the ITO materials is, the poorer the transmittance to light is, therefore, the loss caused by light attenuation can be reduced to the maximum extent by controlling the thickness of the film layer to be 5-20 nm.
The P pole (the back side of the battery) is used as a cavity output end and is consistent with the direction of the built-in electric field. If the hole migration is facilitated, the corresponding contact resistance is small, and when two semiconductors are in contact, the corresponding hole at the end with the high work function migrates to the end with the low work function, so the TCO material in contact with the P-type polycrystalline silicon film layer needs to be selected to facilitate the hole output. Whereas the semiconductor TCO material is in contact with the metal electrode 4, it is desirable that the metal has a relatively low work function or that the semiconductor has a relatively high work function, which facilitates the transfer of holes from the semiconductor to the metal. Therefore, the TCO-III film layer 33 in contact with the P-type amorphous silicon film layer realizes that the P-pole hole can migrate to the TCO-III film layer 33 by selecting the TCO film layer with the lowest work function. The TCO-III film layer 33 is preferably made of ITO (90:10) and the like; because the TCO-III film layer is a film with a lower work function, if the TCO-III is directly contacted with the metal electrode 4, the transfer of holes to the metal electrode 4 cannot be promoted to the maximum extent because the work functions of the TCO-III and the metal silver electrode are relatively lower. At the moment, a TCO-IV film layer 34 with the work function as high as possible is manufactured between the TCO-III and the metal electrode 4, so that the TCO-IV film layer 34 and the metal electrode 4 are relatively high in work function, holes can be transferred from the TCO-IV to the metal electrode 4 conveniently, and the contact resistance of the TCO film layer and the metal electrode 4 is reduced as far as possible. The TCO-IV film layer is preferably made of IZO, ITO (99:1), ITO (98:2), ITO (97:3) and the like. In terms of effect, the TCO-III film layer serves as a connecting layer, the TCO-I film layer is made of ITO materials with the mass ratio of 90:10, the higher the tin oxide content of the ITO materials is, the poorer the transmittance to light is, and therefore, the attenuation loss of the film layer to light can be reduced to the maximum extent by controlling the thickness of the film layer to be 5-20 nm.
Example 1
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is IZO, and the film thickness is 95 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is IZO, and the film thickness is 95 nm; the conversion efficiency percentage of the cell is tested to be 23.38 by adopting a steady state light source method under the STC condition and taking a standard plate of a Chinese national measurement institute as a reference (the same below).
Example 2
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 10 nm; TCO-II is IZO, and the film thickness is 90 nm; TCO-III is ITO (90:10), and the film thickness is 10 nm; TCO-IV is IZO, and the film thickness is 90 nm; the percent conversion efficiency of the cell plate is 23.29.
Example 3
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 20 nm; TCO-II is IZO, and the film thickness is 80 nm; TCO-III is ITO (90:10), and the film thickness is 20 nm; TCO-IV is IZO, and the film thickness is 80 nm; the percent conversion efficiency of the cell piece is 23.21.
Example 4
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 30 nm; TCO-II is IZO, and the film thickness is 70 nm; TCO-III is ITO (90:10), and the film thickness is 30 nm; TCO-IV is IZO, and the film thickness is 70 nm; the percent conversion efficiency of the cell plate is tested to be 23.05.
Example 5
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is IZO, and the film thickness is 95 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is IZOu, the film thickness is 95 nm; the percent conversion efficiency of the cell piece is 23.26.
Example 6
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 10 nm; TCO-II is IZO, and the film thickness is 90 nm; TCO-III is ITO (90:10), and the film thickness is 10 nm; TCO-IV is IZOu, and the film thickness is 90 nm; the percent conversion efficiency of the cell piece is 23.17.
Example 7
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 20 nm; TCO-II is IZO, and the film thickness is 80 nm; TCO-III is ITO (90:10), and the film thickness is 20 nm; TCO-IV is IZOu, and the film thickness is 80 nm; the percent conversion efficiency of the cell sheet is tested to be 23.0.
Example 8
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 30 nm; TCO-II is IZO, and the film thickness is 70 nm; TCO-III is ITO (90:10), and the film thickness is 30 nm; TCO-IV is IZOl, and the film thickness is 70 nm; the percent conversion efficiency of the cell plate is tested to be 22.85.
Example 9
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is ITO (99:1), and the film thickness is 95 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is ITO (99:1), and the film thickness is 95 nm; the percent conversion efficiency of the cell plate is 23.20.
Example 10
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 10 nm; TCO-II is ITO (99:1), and the film thickness is 90 nm; TCO-III is ITO (90:10), and the film thickness is 10 nm; TCO-IV is ITO (99:1), and the film thickness is 90 nm; the percent conversion efficiency of the cell plate is tested to be 23.11.
Example 11
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 20 nm; TCO-II is ITO (99:1), and the film thickness is 80 nm; TCO-III is ITO (90:10), and the film thickness is 20 nm; TCO-IV is ITO (99:1), and the film thickness is 80 nm; the percent conversion efficiency of the cell plate is tested to be 22.99.
Example 12
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 30 nm; TCO-II is ITO (99:1), and the film thickness is 70 nm; TCO-III is ITO (90:10), and the film thickness is 30 nm; TCO-IV is ITO (99:1), and the film thickness is 70 nm; the percent conversion efficiency of the cell plate is tested to be 22.77.
Example 13
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is ITO (98:2), and the film thickness is 95 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is ITO (98:2), and the film thickness is 95 nm; the percent conversion efficiency of the cell plate is 23.14.
Example 14
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 10 nm; TCO-II is ITO (98:2), and the film thickness is 90 nm; TCO-III is ITO (90:10), and the film thickness is 10 nm; TCO-IV is ITO (98:2), and the film thickness is 90 nm; the percent conversion efficiency of the cell plate is tested to be 23.05.
Example 15
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 20 nm; TCO-II is ITO (98:2), and the film thickness is 80 nm; TCO-III is ITO (90:10), and the film thickness is 20 nm; TCO-IV is ITO (98:2), and the film thickness is 80 nm; the percent conversion efficiency of the cell plate is tested to be 22.93.
Example 16
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 30 nm; TCO-II is ITO (98:2), and the film thickness is 70 nm; TCO-III is ITO (90:10), and the film thickness is 30 nm; TCO-IV is ITO (98:2), and the film thickness is 70 nm; the percent conversion efficiency of the cell plate is tested to be 22.72.
Example 17
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is ITO (97:3), and the film thickness is 95 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is ITO (97:3), and the film thickness is 95 nm; the percent conversion efficiency of the cell plate is tested to be 23.01.
Example 18
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 10 nm; TCO-II is ITO (97:3), and the film thickness is 90 nm; TCO-III is ITO (90:10), and the film thickness is 10 nm; TCO-IV is ITO (97:3), and the film thickness is 90 nm; the percent conversion efficiency of the cell sheet is tested to be 22.92.
Example 19
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 20 nm; TCO-II is ITO (97:3), and the film thickness is 80 nm; TCO-III is ITO (90:10), and the film thickness is 20 nm; TCO-IV is ITO (97:3), and the film thickness is 80 nm; the percent conversion efficiency of the cell plate is tested to be 22.80.
Example 20
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 30 nm; TCO-II is ITO (97:3), and the film thickness is 70 nm; TCO-III is ITO (90:10), and the film thickness is 30 nm; TCO-IV is ITO (97:3), and the film thickness is 70 nm; the percent conversion efficiency of the cell plate is tested to be 22.68.
Example 21
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is IZO, and the film thickness is 70 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is IZO, and the film thickness is 70 nm; the percent conversion efficiency of the cell piece is 23.17.
Example 22
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is IZO, and the film thickness is 80 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is IZO, and the film thickness is 80 nm; the percent conversion efficiency of the cell plate is 23.33.
Example 23
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is IZO, and the film thickness is 100 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is IZO, and the film thickness is 100 nm; the percent conversion efficiency of the cell plate is tested to be 23.15.
Example 24
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is IZO, and the film thickness is 110 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is IZO, and the film thickness is 110 nm; the percent conversion efficiency of the cell plate is tested to be 23.10.
Example 25
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is IZO, and the film thickness is 130 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is IZO, and the film thickness is 130 nm; the percent conversion efficiency of the cell plate is tested to be 23.05.
Example 26
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is IZO, and the film thickness is 70 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is IZOl, and the film thickness is 70 nm; the percent conversion efficiency of the cell plate is tested to be 23.12.
Example 27
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is IZO, and the film thickness is 80 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is IZOu, and the film thickness is 80 nm; the percent conversion efficiency of the cell plate is 23.28.
Example 28
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is IZO, and the film thickness is 100 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is IZOl, and the film thickness is 100 nm; the percent conversion efficiency of the cell plate is tested to be 23.10.
Example 29
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is ITO (99:1), and the film thickness is 70 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is ITO (99:1), and the film thickness is 70 nm; the percent conversion efficiency of the cell plate is 23.09.
Example 30
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is ITO (99:1), and the film thickness is 80 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is ITO (99:1), and the film thickness is 80 nm; the percent conversion efficiency of the cell plate is tested to be 23.16.
Example 31
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is ITO (99:1), and the film thickness is 100 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is ITO (99:1), and the film thickness is 100 nm; the percent conversion efficiency of the cell piece is 23.06.
Example 32
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is ITO (98:2), and the film thickness is 70 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is ITO (98:2), and the film thickness is 70 nm; the percent conversion efficiency of the cell plate is tested to be 22.94.
Example 33
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is ITO (98:2), and the film thickness is 80 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is ITO (98:2), and the film thickness is 80 nm; the percent conversion efficiency of the cell plate is 23.09.
Example 34
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is ITO (98:2), and the film thickness is 100 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is ITO (98:2), and the film thickness is 100 nm; the percent conversion efficiency of the cell plate is tested to be 22.91.
Example 35
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is ITO (97:3), and the film thickness is 70 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is ITO (97:3), and the film thickness is 70 nm; the percent conversion efficiency of the cell plate is tested to be 22.88.
Example 36
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is ITO (97:3), and the film thickness is 80 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is ITO (97:3), and the film thickness is 80 nm; the percent conversion efficiency of the cell plate is tested to be 23.02.
Example 37
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is ITO (97:3), and the film thickness is 100 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is ITO (97:3), and the film thickness is 100 nm; the percent conversion efficiency of the cell piece is 22.83.
Example 38
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is ITO (97:3), and the film thickness is 110 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is ITO (97:3), and the film thickness is 110 nm; the percent conversion efficiency of the cell plate is tested to be 22.80.
Example 39
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is ITO (97:3), and the film thickness is 130 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is ITO (97:3), and the film thickness is 130 nm; the percent conversion efficiency of the cell plate is tested to be 22.78.
Example 40
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is IZO, and the film thickness is 95 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is IZOu, the film thickness is 95 nm; the percent conversion efficiency of the cell plate is 23.30.
EXAMPLE 41
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein the TCO-I is ITO (90:10) and the thickness of the film is 5 nm; TCO-II is IZO, and the film thickness is 95 nm; TCO-III is ITO (90:10), and the film thickness is 5 nm; TCO-IV is ITO (97:3), and the film thickness is 95 nm; the percent conversion efficiency of the cell sheet is tested to be 23.19.
Comparative example 1
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of two layers of TCO-I, TCO-III films without plating of TCO-II and TCO-IV, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-III, wherein the TCO-I and TCO-III are both ITO (90:10) and the film thickness is 100 nm; the percent conversion efficiency of the cell plate is tested to be 22.59.
Comparative example 2
Selecting a blue film subjected to texturing and amorphous silicon film plating by PECVD (plasma enhanced chemical vapor deposition) to carry out double-sided plating of TCO-I, TCO-II, TCO-III and TCO-IV respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-IV, wherein TCO-I is ITO (90: 10); wherein TCO-I is IZO, and the thickness of the film is 5 nm; TCO-II is ITO (90:10), and the film thickness is 95 nm; TCO-III is IZO, and the film thickness is 5 nm; TCO-IV is ITO (90:10), and the film thickness is 95 nm; the percent conversion efficiency of the cell sheet is tested to be 22.42.
The data summarizing the above examples and comparative examples are shown in table 1 below:
TABLE 1
Figure BDA0002695246140000161
Figure BDA0002695246140000171
From table 1, the following information can be seen:
as can be seen from the data of examples 1-4, when TCO-I and TCO-III are both ITO (90:10), they are both low work function materials, TCO-II and TCO-IV are IZO high work function materials, and the total thickness of the single surfaces ((TCO-I + TCO-II), (TCO-III + TCO-IV)) is 100 nm. When the thickness of TCO-I and TCO-III is increased from 5nm to 20nm, the conversion efficiency of the cell is gradually reduced from 23.38 to 23.21, and when the thickness is increased to 30nm, the conversion efficiency of the cell is reduced to 23.05.
As can be seen from the data of examples 5-8, when TCO-I and TCO-III are both ITO (90:10), which are both low work function materials, TCO-II and TCO-IV are IZrO, and the total thickness of the single surfaces ((TCO-I + TCO-II), (TCO-III + TCO-IV)) is 100 nm. When the thickness of TCO-I and TCO-III is increased from 5nm to 20nm, the conversion efficiency of the cell is gradually reduced from 23.26 to 23.17, and when the thickness is increased to 30nm, the conversion efficiency of the cell is reduced to 22.85.
As can be seen from the data of examples 9-12, when TCO-I and TCO-III are both ITO (90:10), which are both low work function materials, TCO-II and TCO-IV are ITO (99:1), and the total thickness of the single surfaces ((TCO-I + TCO-II), (TCO-III + TCO-IV)) is 100 nm. When the thickness of TCO-I and TCO-III is increased from 5nm to 20nm, the conversion efficiency of the cell is gradually reduced from 23.20 to 23.99, and when the thickness is increased to 30nm, the conversion efficiency of the cell is reduced to 22.77.
As can be seen from the data of examples 13-16, when TCO-I and TCO-III are both ITO (90:10), which are both low work function materials, TCO-II and TCO-IV are ITO (98:2), and the total thickness of the single surfaces ((TCO-I + TCO-II), (TCO-III + TCO-IV)) is 100 nm. When the thickness of TCO-I and TCO-III is increased from 5nm to 20nm, the conversion efficiency of the cell is gradually reduced from 23.14 to 22.93, and when the thickness is increased to 30nm, the conversion efficiency of the cell is reduced to 22.72.
As can be seen from the data of examples 17-20, when TCO-I and TCO-III are both ITO (90:10), which are both low work function materials, TCO-II and TCO-IV are ITO (97:3), (TCO-I + TCO-II), (TCO-III + TCO-IV) single-sided thin film layers have a total thickness of 100 nm. When the thickness of TCO-I and TCO-III is increased from 5nm to 20nm, the conversion efficiency of the cell is gradually reduced from 23.01 to 22.80, and when the thickness is increased to 30nm, the conversion efficiency of the cell is reduced to 22.68.
As can be seen from the data of examples 1-20, when the thickness of the TCO-I and TCO-III films 33 is more suitable from 5nm to 20nm, the transmittance of the low work function material ITO (90:10) is poor, and the thickness of the TCO-II and TCO-IV films is too thin, so that the conductivity is insufficient, and the conversion rate is too low when the thickness is 30nm or more.
Meanwhile, it can be seen from the data of examples 1 to 20 that when the thicknesses of the TCO-I and the TCO-III are the same, and the thicknesses of the TCO-II and the TCO-IV film layers 34 are the same, the work function matching degree is reduced and the conversion efficiency of the cell is correspondingly reduced along with the reduction of the work functions of IZO, ITO (99:1), ITO (98:2) and ITO (97:3) materials.
As can be seen from the data of the embodiment 21, the embodiment 22, the embodiment 1 and the embodiments 23, 24 and 25, when TCO-I and TCO-III are low work function film layers with the thickness of 5nm, and TCO-II and TCO-IV are high work function film layers with the thickness of 70nm to 130nm, the conversion efficiency of the cell is 23.33 to 23.05. When the thickness of the TCO-II and TCO-IV film layers 34 is increased from 100nm to 130nm, the conversion rate of the cell does not increase but slightly decreases. Wherein, the conversion efficiency is better when the film thickness is 80-95nm, so the film thickness of TCO-II and TCO-IV is preferably 80-95 nm.
As can be seen from the data of the embodiment 26, the embodiment 27, the embodiment 5 and the embodiment 28, when the TCO-I and the TCO-III are low work function films with the thickness of 5nm, and the TCO-II and the TCO-IV are high work function films with the thickness of 80nm to 100nm, the conversion efficiency of the cell is 23.28 to 23.10. Wherein, the conversion efficiency is better when the film thickness is 80-95nm, so the film thickness of TCO-II and TCO-IV is preferably 80-95 nm.
As can be seen from the data of example 29, example 30, example 9 and example 31, when TCO-I and TCO-III are low work function films with the thickness of 5nm, and TCO-II and TCO-IV are high work function films ITO (99:1) with the thickness of 80nm to 100nm, the conversion efficiency of the cell is 23.16 to 23.98. Wherein, the conversion efficiency is better when the film thickness is 80-95nm, so the film thickness of TCO-II and TCO-IV is preferably 80-95 nm.
As can be seen from the data of example 32, example 33, example 13 and example 34, when TCO-I and TCO-III are low work function films with a thickness of 5nm, and TCO-II and TCO-IV are high work function films ITO (98:2) with a thickness of 80nm to 100nm, the conversion efficiency of the cell is 23.09 to 23.06. Wherein, the conversion efficiency is better when the film thickness is 80-95nm, so the film thickness of TCO-II and TCO-IV is preferably 80-95 nm.
From the data of example 35, example 36, example 17 and examples 37, 38 and 39, it can be seen that when TCO-I and TCO-III are low work function films with a thickness of 5nm, and TCO-II and TCO-IV are high work function films ITO (97:3) with a thickness of 80nm to 130nm, the conversion efficiency of the cell is 23.02 to 22.78. When the thickness of the TCO-II and TCO-IV film layers 34 is increased from 100nm to 130nm, the conversion rate is not increased but slightly reduced, wherein the conversion efficiency is better when the film thickness is 80-95nm, so the film thickness of the TCO-II and TCO-IV is preferably 80-95 nm.
In example 40, compared with example 1, only if TCO-IV is changed from IZO to izzro with lower work function than that of IZO, the work function difference between IZrO and the metal electrode 4 is smaller than that between IZO and the metal electrode 4, and the conversion efficiency of the cell is reduced to 23.30 from 23.38 compared with the derivation of relatively unfavorable P-pole holes.
In comparison with example 1, the conversion efficiency of the cell sheet is further reduced from 23.38 to 23.19 by merely replacing the TCO-IV with IZO and lower ITO (97: 3).
Comparative example 1
In the comparative example, only a single 100nm ITO (90:10) film layer was coated on both the front and back sides, and the conversion efficiency of the corresponding cell was 22.59. Because the ITO (90:10) single-layer 100nm film has poor transmittance and the work function of the ITO single-layer 100nm film is not matched with that of the N pole, the P pole and the metal electrode 4, electrons and holes cannot be effectively led out, and the conversion efficiency of the cell is low.
Comparative example 2
Compared with the example 1, the TCO-I, TCO-III of the comparative example adopts a high work function material IZO; TCO-II and TCO-IV adopt ITO (90:10) with low work function, the conversion rate of the cell is 22.42, mainly because the work functions of the materials are not matched, and meanwhile, the visible light transmittance of the ITO (90:10) is poor, compared with the embodiment 1, the conversion rate of the cell is obviously reduced.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.

Claims (9)

1. A heterojunction solar cell, characterized in that: the TCO-I film layer, the TCO-II film layer, the N-type amorphous silicon layer, the first intrinsic amorphous silicon layer, the N-type substrate, the second intrinsic amorphous silicon layer, the P-type amorphous silicon layer, the TCO-III film layer and the TCO-IV film layer are sequentially stacked;
the work function of the TCO-II film layer is higher than that of the TCO-I film layer, and the work function of the TCO-IV film layer is higher than that of the TCO-III film layer.
2. The heterojunction solar cell of claim 1, wherein: the preparation materials of the TCO-I film layer and the TCO-III film layer are selected from ITO; wherein the mass percentage of the tin oxide in the ITO is 10%.
3. The heterojunction solar cell of claim 1, wherein: the thickness of each of the TCO-I film layer and the TCO-III film layer is 5-30 nm, and preferably 5-20 nm.
4. The heterojunction solar cell of claim 1, wherein: the work function of the preparation materials of the TCO-II film layer and the TCO-IV film layer is not lower than 4.7 eV.
5. The heterojunction solar cell of claim 1, wherein: the preparation materials of the TCO-II film layer and the TCO-IV film layer are respectively and independently selected from at least one of IZO, IZO and ITO (99: 1-97: 3); wherein the ITO (99: 1-97: 3) material is 1-3% of tin oxide by mass percentage.
6. The heterojunction solar cell of claim 1, wherein: the thickness of the TCO-II film layer and the TCO-IV film layer is 70-130 nm, and preferably 80-95 nm.
7. The heterojunction solar cell of claim 1, wherein: the heterojunction solar cell further comprises metal electrodes respectively arranged on the surfaces of the TCO-I film layer and the TCO-IV film layer.
8. A method of manufacturing a heterojunction solar cell according to any of claims 1 to 7, wherein: the method comprises the following steps:
s1, forming a first intrinsic amorphous silicon layer and an N-type amorphous silicon layer on one side of the textured N-type substrate from inside to outside in sequence by PECVD, and forming a second intrinsic amorphous silicon layer and a P-type amorphous silicon layer on the other side of the textured N-type substrate from inside to outside in sequence;
s2, sequentially forming a TCO-II film layer and a TCO-I film layer on the surface of the N-type amorphous silicon layer, and sequentially forming a TCO-III film layer and a TCO-IV film layer on the surface of the P-type amorphous silicon layer.
9. A power generation system, characterized by: the power generation system comprising a heterojunction solar cell as claimed in any of claims 1 to 7.
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