CN112174659B - 一种钛酸锶压敏电阻及其制备方法 - Google Patents

一种钛酸锶压敏电阻及其制备方法 Download PDF

Info

Publication number
CN112174659B
CN112174659B CN202011071967.0A CN202011071967A CN112174659B CN 112174659 B CN112174659 B CN 112174659B CN 202011071967 A CN202011071967 A CN 202011071967A CN 112174659 B CN112174659 B CN 112174659B
Authority
CN
China
Prior art keywords
strontium titanate
sample
furnace
mol
piezoresistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011071967.0A
Other languages
English (en)
Other versions
CN112174659A (zh
Inventor
王疆瑛
张景基
刘亚丕
杜汇伟
朱泽洁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xinchang China Metrology University Enterprise Innovation Research Institute Co ltd
China Jiliang University
Original Assignee
Xinchang China Metrology University Enterprise Innovation Research Institute Co ltd
China Jiliang University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xinchang China Metrology University Enterprise Innovation Research Institute Co ltd, China Jiliang University filed Critical Xinchang China Metrology University Enterprise Innovation Research Institute Co ltd
Priority to CN202011071967.0A priority Critical patent/CN112174659B/zh
Publication of CN112174659A publication Critical patent/CN112174659A/zh
Application granted granted Critical
Publication of CN112174659B publication Critical patent/CN112174659B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
    • C04B35/47—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on strontium titanates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
    • B28B3/00—Producing shaped articles from the material by using presses; Presses specially adapted therefor
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5116—Ag or Au
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/88—Metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/30—Apparatus or processes specially adapted for manufacturing resistors adapted for baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H01C7/112—ZnO type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H01C7/115—Titanium dioxide- or titanate type
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3201—Alkali metal oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3229—Cerium oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418—Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/444—Halide containing anions, e.g. bromide, iodate, chlorite
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6581—Total pressure below 1 atmosphere, e.g. vacuum

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Mechanical Engineering (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Thermistors And Varistors (AREA)

Abstract

本发明创造提供了一种钛酸锶压敏电阻，其成分为：Sr1‑x‑y‑z TiO3+x(CeO2+Nb2O5)+y(ZnO+1/2NaCO3)+zSiO2，其中x＝0.1‑0.5mol％，y＝0.2‑0.8mol％，z＝0.2‑0.9mol％。制备时，先将称量氯化锶、氯化钛加入盐酸和水溶液，搅拌加热60℃，加入等摩尔量的草酸和少量无水乙醇的水溶液，用盐酸调成PH值为1，混合沉淀，清洗过滤，得到沉淀物，将沉淀物在105‑130℃烘干，然后，在750℃‑850℃热分解3‑8小时，得到钛酸锶粉体材料；将得到的钛酸锶粉体与x(CeO2+Nb2O5)+y(ZnO+1/2NaCO3)+zSiO2混合球磨6‑12小时，在110℃‑150℃烘干，冲压成片；将成型后的样品放在刚玉方舟中，然后放入真空烧结炉中。本发明创造中粉料直接干压成型，不加粘结剂，不需在进行高温排胶；真空烧结气氛代替气氛炉烧结，氧化烧结过程在空气中进行，实验更加安全，工艺性能好、简单和产品质量容易控制。

Description

一种钛酸锶压敏电阻及其制备方法
技术领域
本发明属于电子信息工程技术领域，具体涉及一种钛酸锶压敏电阻及其制备方法。
背景技术
随着我国工业生产的快速发展，集成、大规模集成电路在电子设备中的广泛使用,电子元件和设备也日益向微型、轻量、集成、多功能、高可靠高稳定性方向发展,这要求对低压化的微集成装置加强保护。压敏陶瓷可以用于抑制电压浪涌和过电压保护，并且普遍的应用于在航空、航天、电力、国防、交通和家用电器等各种领域。由于钛酸锶(SrTiO3)陶瓷既具有较大的介电常数，又具有相对较高的非线性系数与较低的压敏电压，所以它在低压领域的应用前景是不能够被取代的。SrTiO3压敏电阻器具有电容-压敏双功能特性，优异的消噪作用和过电压保护功能，可应用于各类电子设备和电子系统中，大大提高电子设备和电子系统的电磁兼容性、可靠性及寿命。在实际应用中的研究价值日益增加。
发明内容
本发明的目的是提供一种钛酸锶压敏电阻及其制备方法。所提供的钛酸锶压敏电阻其成分为：Sr1-x-y-zTiO3+x(CeO2+Nb2O5)+y(ZnO+1/2NaCO3)+zSiO2，其中x＝0.1-0.5mol％，y＝0.2-0.8mol％，z＝0.2—0.9mol％。
一种钛酸锶压敏电阻的制备方法，包括以下步骤：，
a)将称量氯化锶(SrCl4)、氯化钛(TiCl4)加入(HCl)盐酸和水溶液，搅拌加热60℃，加入等摩尔量的草酸和少量无水乙醇的水溶液，用盐酸调成PH值为1，混合沉淀，清洗过滤，得到沉淀物，将沉淀物在105-130℃烘干，然后，在750℃-850℃热分解，得到钛酸锶(Sr1-x-y-zTiO3)粉体材料。
b)将得到的钛酸锶(Sr1-x-y-zTiO3)粉体与x(CeO2+Nb2O5)+y(ZnO+1/2NaCO3)+zSiO2混合球磨6-12小时，在110℃-150℃烘干，冲压成Φ8mm，厚度1.0mm的圆片。
c)将成型后的样品放在刚玉方舟中，然后放入真空烧结炉中，在真空气氛下，在温度1250-1500℃，保温4-8小时，然后随炉自然冷却。将冷却后的样品取出并放入马弗炉或箱式电阻炉中，在800-1000℃氧化温度下保温20-30min，随后随炉自然冷却。经两面研磨，超声波清洗，烘干，将清洗抛光后的样品的上下两个表面均匀的涂覆导电银装然后放入马弗炉中于550℃保温5分钟，随后随炉自然冷却，得到钛酸锶压敏电阻，压敏电压V10mA＝4-7V，非线性指数α＝4-5，损耗系数tgδ＝0.02-0.03，电容55-70nF。
本发明具有以下主要特点：
粉料直接干压成型，不加入粘结剂，不需要在进行高温排胶；真空烧结气氛代替气氛炉烧结，氧化烧结过程在空气中进行，实验更加安全简练，具有制备方法工艺性能好、简单和产品质量容易控制。
具体实施方式
实施例1
根据钛酸锶压敏电阻成分为：
Sr0.98TiO3+0.5mol％(CeO2+Nb2O5)+0.6mol％(ZnO+1/2NaCO3)+0.9mol％SiO2。
钛酸锶压敏电阻的制备方法，包括以下步骤：，
a)一种钛酸锶(Sr0.98TiO3)粉体材料的制备
按照实施例1要求的配比，将称量氯化锶(SrCl4)、氯化钛(TiCl4)加入(HCl)盐酸和水溶液，搅拌加热60℃，加入等摩尔量的草酸和少量无水乙醇的水溶液，用盐酸调成PH值为1，混合沉淀，清洗过滤，得到沉淀物，将沉淀物在110℃烘干，然后，在800℃热分解4小时，得到钛酸锶(Sr0.98TiO3)粉体材料。
b)将得到的钛酸锶(Sr0.98TiO3)粉体与0.6mol％(ZnO+1/2NaCO3)+0.9mol％SiO2混合球磨8小时，在120℃烘干，冲压成Φ8mm，厚度1.0mm的圆片。
c)将成型后的样品放在刚玉方舟中，然后放入真空烧结炉中，在真空气氛下，在温度1350℃，保温4小时，然后随炉自然冷却。将冷却后的样品取出并放入马弗炉或箱式电阻炉中，在900℃氧化温度下保温30min，随后随炉自然冷却。经两面研磨，超声波清洗，烘干，将清洗抛光后的样品的上下两个表面均匀的涂覆导电银装然后放入马弗炉中于550℃保温5分钟，随后随炉自然冷却，得到钛酸锶压敏电阻，压敏电压V10mA＝4.2V，非线性指数α＝4，损耗系数tgδ＝0.02，电容68nF。
实施例2
根据钛酸锶压敏电阻成分为：
Sr0.988TiO3+0.3mol％(CeO2+Nb2O5)+0.4mol％(ZnO+1/2NaCO3)+0.5mol％SiO2。
钛酸锶压敏电阻的制备方法，包括以下步骤：，
b)一种钛酸锶(Sr0.988TiO3)粉体材料的制备
按配比，将称量氯化锶(SrCl4)、氯化钛(TiCl4)加入(HCl)盐酸和水溶液，搅拌加热60℃，加入等摩尔量的草酸和少量无水乙醇的水溶液，用盐酸调成PH值为1，混合沉淀，清洗过滤，得到沉淀物，将沉淀物在110℃烘干，然后，在850℃热分解6小时，得到钛酸锶(Sr0.98TiO3)粉体材料。
b)将得到的钛酸锶(Sr0.98TiO3)粉体与0.3mol％(CeO2+Nb2O5)+0.4mol％(ZnO+1/2NaCO3)+
0.5mol％SiO2混合球磨10小时，在120℃烘干，冲压成Φ8mm，厚度1.0mm的圆片。
c)将成型后的样品放在刚玉方舟中，然后放入真空烧结炉中，在真空气氛下，在温度1400℃，保温6小时，然后随炉自然冷却。将冷却后的样品取出并放入马弗炉或箱式电阻炉中，在950℃氧化温度下保温20min，随后随炉自然冷却。经两面研磨，超声波清洗，烘干，将清洗抛光后的样品的上下两个表面均匀的涂覆导电银装然后放入马弗炉中于550℃保温5分钟，随后随炉自然冷却，得到钛酸锶压敏电阻，压敏电压V10mA＝4.5V，非线性指数α＝5，损耗系数tgδ＝0.02，电容64nF。
实施例3
根据钛酸锶压敏电阻成分为：
Sr0.984TiO3+0.5mol％(CeO2+Nb2O5)+0.5mol％(ZnO+1/2NaCO3)+0.6mol％SiO2。
钛酸锶压敏电阻的制备方法，包括以下步骤：
c)一种钛酸锶(Sr0.988TiO3)粉体材料的制备
按配比，将称量氯化锶(SrCl4)、氯化钛(TiCl4)加入(HCl)盐酸和水溶液，搅拌加热60℃，加入等摩尔量的草酸和少量无水乙醇的水溶液，用盐酸调成PH值为1，混合沉淀，清洗过滤，得到沉淀物，将沉淀物在110℃烘干，然后，在850℃热分解6小时，得到钛酸锶(Sr0.984TiO3)粉体材料。
b)将得到的钛酸锶(Sr0.984TiO3)粉体与0.5mol％(CeO2+Nb2O5)+
0.5mol％(ZnO+1/2NaCO3)+0.6mol％SiO2混合球磨10小时，在120℃烘干，冲压成Φ8mm，厚度1.0mm的圆片。
c)将成型后的样品放在刚玉方舟中，然后放入真空烧结炉中，在真空气氛下，在温度1350℃，保温8小时，然后随炉自然冷却。将冷却后的样品取出并放入马弗炉或箱式电阻炉中，在900℃氧化温度下保温30min，随后随炉自然冷却。经两面研磨，超声波清洗，烘干，将清洗抛光后的样品的上下两个表面均匀的涂覆导电银装然后放入马弗炉中于550℃保温5分钟，随后随炉自然冷却，得到钛酸锶压敏电阻，压敏电压V10mA＝4.7V，非线性指数α＝4.5，损耗系数tgδ＝0.02，电容61nF。。
实施例4
根据钛酸锶压敏电阻成分为：
Sr0.99TiO3+0.3mol％(CeO2+Nb2O5)+0.3mol％(ZnO+1/2NaCO3)+0.4mol％SiO2。
钛酸锶压敏电阻的制备方法，包括以下步骤：，
d)一种钛酸锶(Sr0.99TiO3)粉体材料的制备
按配比，将称量氯化锶(SrCl4)、氯化钛(TiCl4)加入(HCl)盐酸和水溶液，搅拌加热60℃，加入等摩尔量的草酸和少量无水乙醇的水溶液，用盐酸调成PH值为1，混合沉淀，清洗过滤，得到沉淀物，将沉淀物在120℃烘干，然后，在900℃热分解4小时，得到钛酸锶(Sr0.99TiO3)粉体材料。
b)将得到的钛酸锶(Sr0.99TiO3)粉体与0.3mol％(CeO2+Nb2O5)+0.3mol％(ZnO+1/2NaCO3)+
0.4mol％SiO2混合球磨10小时，在130℃烘干，冲压成Φ8mm，厚度1.0mm的圆片。
c)将成型后的样品放在刚玉方舟中，然后放入真空烧结炉中，在真空气氛下，在温度1400℃，保温4小时，然后随炉自然冷却。将冷却后的样品取出并放入马弗炉或箱式电阻炉中，在930℃氧化温度下保温30min，随后随炉自然冷却。经两面研磨，超声波清洗，烘干，将清洗抛光后的样品的上下两个表面均匀的涂覆导电银装然后放入马弗炉中于550℃保温5分钟，随后随炉自然冷却，得到钛酸锶压敏电阻，压敏电压V10mA＝5.1V，非线性指数α＝5，损耗系数tgδ＝0.03，电容58nF。

Claims (1)

1.一种钛酸锶压敏电阻的制备方法，其特征在于，包括以下步骤：
a)将称量氯化锶、氯化钛加入盐酸和水溶液，搅拌加热60℃，加入等摩尔量的草酸和少量无水乙醇的水溶液，用盐酸调成PH值为1，混合沉淀，清洗过滤，得到沉淀物，将沉淀物在105-130℃烘干，然后，在750℃-850℃热分解3-8小时，得到钛酸锶粉体材料；
b)将得到的钛酸锶粉体与x(CeO2+Nb2O5)+y(ZnO+1/2NaCO3)+zSiO2混合球磨6-12小时，在110℃-150℃烘干，冲压成Φ8mm，厚度1.0mm的圆片；
c)将成型后的样品放在刚玉方舟中，然后放入真空烧结炉中，在真空气氛下，在温度1250-1450℃，保温4-8小时，然后随炉自然冷却；将冷却后的样品取出并放入马弗炉或箱式电阻炉中，在800-1000℃氧化温度下保温20-30min，随后随炉自然冷却；
经两面研磨，超声波清洗，烘干，将清洗抛光后的样品的上下两个表面均匀的涂覆导电银装然后放入马弗炉中于550℃保温5分钟，随后随炉自然冷却，得到钛酸锶压敏电阻，压敏电压V10mA＝4-7V，非线性指数α＝4-5，损耗系数tgδ＝0.02-0.03，电容55-70nF；
所述钛酸锶压敏电阻的成分为：Sr1-x-y-z TiO3+x(CeO2+Nb2O5)+y(ZnO+1/2Na CO3)+zSiO2，其中x＝0.1-0.5mol％，y＝0.2-0.8mol％，z＝0.2-0.9mol％。
CN202011071967.0A 2020-10-09 2020-10-09 一种钛酸锶压敏电阻及其制备方法 Active CN112174659B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011071967.0A CN112174659B (zh) 2020-10-09 2020-10-09 一种钛酸锶压敏电阻及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011071967.0A CN112174659B (zh) 2020-10-09 2020-10-09 一种钛酸锶压敏电阻及其制备方法

Publications (2)

Publication Number Publication Date
CN112174659A CN112174659A (zh) 2021-01-05
CN112174659B true CN112174659B (zh) 2022-08-16

Family

ID=73947990

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011071967.0A Active CN112174659B (zh) 2020-10-09 2020-10-09 一种钛酸锶压敏电阻及其制备方法

Country Status (1)

Country Link
CN (1) CN112174659B (zh)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4545929A (en) * 1981-07-22 1985-10-08 Taiyo Yuden Co., Ltd. Ceramic materials with a voltage-dependent nonlinear resistance
US4490318A (en) * 1981-11-26 1984-12-25 Taiyo Yuden Co., Ltd. Semiconductive ceramic materials with a voltage-dependent nonlinear resistance, and process for preparation
JPS5891602A (ja) * 1981-11-26 1983-05-31 太陽誘電株式会社 電圧非直線磁器組成物
CN1800091A (zh) * 2005-12-31 2006-07-12 昆明理工大学 纳米掺杂剂掺杂改性制造SrTiO3 压敏陶瓷材料、电阻的方法及其制造的电阻
CN1850719A (zh) * 2006-05-15 2006-10-25 西安交通大学 一种钛酸锶压敏电阻器介质及其制备方法
CN101555130A (zh) * 2009-05-22 2009-10-14 广西大学 一种低压压敏陶瓷材料及其制备方法

Also Published As

Publication number Publication date
CN112174659A (zh) 2021-01-05

Similar Documents

Publication Publication Date Title
CN109354492B (zh) 铋基无铅高储能密度陶瓷材料及其制备方法
CN110272270B (zh) 一种具有低介电损耗及高温稳定性的铁酸铋-钛酸钡基高温无铅压电陶瓷及其制备方法
CN103342556B (zh) 一种两相低温共烧温度稳定型电介质陶瓷材料的制备方法
CN102101774B (zh) 一种抗还原镍电极陶瓷介质材料
CN103408301B (zh) 一种超高压陶瓷电容器介质及其制备方法
CN101492293B (zh) 钛酸钡基y5p陶瓷介电材料及其制备方法
CN102674832B (zh) 一种钛酸钡基无铅含铋弛豫铁电陶瓷材料及制备方法
CN105272233A (zh) 一种陶瓷电容器用介质材料及其制备方法
CN101880158A (zh) IVB族元素改性CaCu3Ti4O12基压敏材料及制备方法
CN101367651A (zh) 一种高频低温烧结陶瓷介质材料及所得电容器的制备方法
CN103214238A (zh) 一种钛酸锶钡基介电温度稳定型陶瓷电容器材料的制备方法
CN107640970B (zh) 低频低介电损耗的AgNb共掺二氧化钛基介电陶瓷材料及其制备方法
CN102030526B (zh) 一种抗还原陶瓷介质材料及其制备方法
CN102030528B (zh) 一种高温度稳定性的介电陶瓷材料及其制备方法
CN106064942A (zh) 高居里温度无铅snkbt压电陶瓷及其制备方法
CN112174659B (zh) 一种钛酸锶压敏电阻及其制备方法
CN104311004A (zh) Ptc陶瓷材料及提高ptc陶瓷材料居里点以下电阻温度稳定性的方法
CN103113100A (zh) 一种高温度稳定陶瓷电容器介质
CN103524127B (zh) 一种高频晶界层陶瓷电容器介质及其制备方法
CN102503407B (zh) 无铅x8r型多层陶瓷电容器介质及其制备方法
CN114394832B (zh) 一种介电温度稳定的锆钛酸钡基瓷料及其制备方法
CN108285342B (zh) 一种x8r陶瓷电容器介质材料及其制备方法
CN102167580A (zh) 一种用于高频段的介质陶瓷及其制备方法
CN109020535B (zh) 一种高介电常数的压敏-电容双功能二氧化钛陶瓷及其制备方法
CN107162582A (zh) 氧化锌掺杂锆钛酸钡钙无铅压电陶瓷

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant