CN112166486A - 用于制作和放置薄片的装置 - Google Patents

用于制作和放置薄片的装置 Download PDF

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CN112166486A
CN112166486A CN201980035390.7A CN201980035390A CN112166486A CN 112166486 A CN112166486 A CN 112166486A CN 201980035390 A CN201980035390 A CN 201980035390A CN 112166486 A CN112166486 A CN 112166486A
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A·丹尼斯尤克
P·多尔埃勒
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Tescan Group Co ltd
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Abstract

一种用于制作和放置薄片的装置包含聚焦离子束、扫描电子显微镜和用于放置至少两个样品的工作台,所述工作台实现所述样品的倾斜、旋转和移动,所述装置还包含由用于附接和传送所述样品的针终止的机械手。所述机械手定位于垂直于所述样品的倾斜的轴线的平面中,藉此实现轻松地传送所述薄片并将其放置入透射电子显微镜的样品架(称为网格)。所述机械手经调整以围绕其自身的轴线旋转所述针。因此,在从半导体装置制作薄片的情况下,本发明实现反转薄片并且在上面形成有半导体结构的半导体衬底层上将其抛光。

Description

用于制作和放置薄片的装置
技术领域
本发明涉及一种用于制作和放置薄片的装置,所述装置包含聚焦离子束和扫描电子显微镜,还具备工作台和机械手。
背景技术
对透射电子显微镜(TEM)和扫描透射电子显微镜(STEM)的样品(称为薄片)的需求不断增加。需要达到特定宽度才能使电子通过样本,并且必须尽可能达到笔直表面才能使(S)TEM给出最佳图像。因此,为了制作此种精确薄片,使用具有聚焦离子束(FIB)的装置(通常结合扫描电子显微镜(SEM))来操控样品配备的操作。通过此种结合的装置,从样品上切割下适当尺寸的薄片,所述薄片可以进一步调整或放置在适当的样品架中以供进一步分析。
取决于样品特征和必要分析,使用所谓的横向视图薄片,即,检查横截面中的样品结构的薄片,或使用所谓的平面视图薄片,所述薄片显示特定样品深度处的样品结构。从样品上切割下薄片,将薄片固定于机械手的针上,并且传送至样品架,在所述样品架中可随后使用FIB在装置的腔室中直接调整薄片或通过STEM技术检查薄片,或者可将薄片传送至用于TEM的样品架(称为网格)并且在其中进一步加工,然后传送至独立的TEM装置。在传送至新样品架期间,需要适当旋转薄片以使薄片以正确的方向放置在样品架中。此种旋转往往很难,并且需要使用具有针的机械手,所述机械手能够围绕其自身轴线旋转。例如,在美国专利US 7423263中,解决了将平面视图薄片传送入网格中的问题。
此外,薄片的制作由于所谓的幕帘效应而变复杂,所述幕帘效应致使在薄片的入射离子的方向上产生槽。如果在样品上的上面落有离子的样品边缘上施加具有低溅射速率的适当材料,这一现象可得以抑制。然后在所述材料上进行溅射。
在半导体样品(装置,例如晶体管)的情况下,可旋转制作的薄片,并且替代施加新的材料层,可使用硅块(或其他材料),在所述硅块上形成半导体结构。此种方法被称为背面抛光。这一方法的缺点还是在于旋转薄片的过程。
因为半导体部件的生产量的增加,有必要进行更有效且更快速的控制,尤其是减少装置操作员的干预。
在美国专利US9653260中揭示的从半导体样品制作薄片的程序使用组合的FIB-SEM装置和特别的网格样品架,所述样品架能够在工作台上独立地旋转薄片,因此操作员无需对装置人工干预。在使用FIB从样品上切割下薄片之后,由机械手旋转薄片并且传送入固定在样品架中的网格。因为机械手处于默认位置,有必要在放置薄片之前相对于薄片相应地定向网格。然后网格样品架能够旋转并且移动薄片,使得有可能将薄片两侧制作为更薄。然而,这特别的网格样品架要求附加的控制器,因此使得整个装置更复杂并且占据样品附近的空间。
发明内容
本发明消除上问所述的先前解决方案的缺点。用于制作和放置薄片的装置包含在样品腔室上的聚焦离子束柱和扫描电子显微镜柱。在样品腔室中,定位用于放置至少两个样品的工作台,从而实现在三个相互垂直的轴线上的倾斜、旋转和移动。工作台可围绕垂直于由聚焦离子束柱的轴线和扫描电子显微镜柱的轴线所界定的平面的轴线倾斜。旋转围绕竖直无倾斜的轴线执行。装置还包含由针终止的机械手,所述机械手能够围绕其自身轴线旋转。机械手定位于由聚焦离子束柱的轴线和扫描电子显微镜柱的轴线所界定的平面中。
机械手优选地定位为与水平位置成0°-35°的角。优选地将机械手定位为较靠近聚焦离子束柱。如果满足这些条件,那么机械手定位于聚焦离子束柱下方且垂直于工作台的倾斜轴线。样品可朝向机械手倾斜,这在与样品协作时是有利的。
工作台可经调整以围绕旋转的轴线放置样品,以便轻松更换已检查样品。
装置还可包含进气系统。在溅射样品材料期间,可将加速溅射的物质或消除幕帘效应的物质加入到接近溅射的位置。在固定样品至机械手的针的期间,可加入在针与样品之间形成连接的气态物质。
通过上述装置,有可能简化制作和放置薄片的过程。从待检查样品的位置,通过FIB以常见方式从样品释放薄片,使得样品相对于其垂直于FIB柱的表面倾斜,由FIB柱溅射在未来薄片的两侧上的材料,将样品倾斜于第二位置,在所述位置中围绕周边切割薄片,并且薄片保持仅固定到样品的小部分。然后,将样品倾斜于某一位置,使得薄片的区域与机械手的针形成90°的角度。在这一位置,针设定在薄片上,其中薄片为固定的且从样品的剩余块上切割下来。然后,使用机械手从针上的样品提起薄片。
当从半导体样品制备薄片时,当希望使薄片甚至更薄且从低侧使用FIB抛光它时,将针旋转180°,因此薄片翻转,但它的区域仍以同样的方式定向。在这一位置,薄片放置在工作台上配置的网格。在样品不需旋转的情况下,薄片直接放置在网格中。
溅射可在存在或不存在进气系统的情况下通过加入物质来发生。在制作和放置薄片的整个时间期间,操作可由SEM监控,或由FIB监控。
本解决方案的优点在于不必在提取薄片之前在机械手的方向上旋转工作台。网格以此种定向布置,使得不必再对薄片进行任何旋转。薄片的转换并且将其放入网格中为操作员提供了简单明了的移动。
附图说明
图1展示根据本发明的处理和检查样品的装置;和
图2至图7展示根据本发明制作样品并将其放置在装置中的程序。
具体实施方式
图1示出根据本发明的装置。扫描电子显微镜柱2定位于样本腔室1上,所述扫描电子显微镜柱包含电子源21、SEM聚光器22、SEM孔23、SEM物镜24和SEM扫描线圈25。此外,聚焦离子束柱3定位于样品腔室1上,所述聚焦离子束柱3包含离子源31、FIB提取器32、FIB物镜33和扫描系统34。工作台4定位于样品腔室1中,所述工作台4实现相对于由聚焦离子束柱3的轴线和扫描电子显微镜柱2的轴线所界定的平面的垂直轴的梯度、围绕竖直无倾斜的轴线的旋转和三个相互垂直的轴线上的移动。装置还包含由针6终止的机械手5,所述机械手5能够围绕其自身轴线移动及旋转。机械手5定位于由聚焦离子束柱3的轴线和扫描电子显微镜柱2的轴线所界定的平面中。机械手5定位为较靠近聚焦离子束柱3
装置可例如用以从半导体样品制作和放置薄片11。如图2所示,样品8和用于放置薄片11的网格9定位于工作台4上。半导体样品8的结构由金属层和介电层组成,所述层放置于半导体衬底层(通常为硅)上。网格9具有凸起的半圆形状,其中薄片11定位于凸起上。网格9竖直地定位于工作台4上,垂直于由聚焦离子束柱3的轴线和扫描电子显微镜柱2的轴线所界定的平面。
如图3所示,工作台4围绕梯度轴线倾斜到聚焦离子束柱3,使得样品8的表面垂直于聚焦离子束柱3的轴线。在这一位置,溅射样品8的材料,使得样品8的两个相反的横截面被溅射,藉此制作出薄片11。利用这一溅射,有可能取决于样品8的确切成分而通过进气系统10加入适当气体,例如,以便加速溅射或减少幕帘效应。有可能使用扫描电子显微镜或聚焦离子束来监控溅射。
然后,工作台4倾斜入第二位置,在所述位置中由离子束12绕周边切割薄片11,并且薄片11保持仅固定到样品8的小部分。如图4所示,工作台4倾斜,使得针6可垂直地接近薄片11的表面。在这一位置,通过使用电子束或离子束12或以其他方式,通过进气系统10所供应的适当材料的沉积将针6固定到薄片11。如图5所示,然后通过离子束12从样品8释放薄片11,并且由机械手5从样品8提起薄片。机械手5将针6旋转180°,藉此转换薄片11(图6)。
如图7所示,由机械手5移动处于此倒转位置的薄片11并且将其放置在网格9中。通过使用优选地来自半导体衬底的侧面的离子束12,薄片11可在网格9中进一步抛光,从而防止幕帘效应的形成。为了从不同侧面抛光和检查薄片11,然后有可能使用工作台4的倾斜、旋转或移动。在薄片11的整个制备期间,可使用扫描电子显微镜观察操作。
放置在网格9中的薄片11可进一步传送入TEM以供进一步检查。
附图标号列表
1-样本腔室
2-扫描电子显微镜柱(SEM)
3-聚焦离子束(FIB)柱
4-工作台
5-机械手
6-针
8-样品
9-网格
10-进气系统
11-薄片
12-离子束
21-电子源
22-SEM聚光器
23-SEM孔
24-SEM物镜
25-SEM扫描线圈
31-离子源
32-FIB抽出器
33-FIB物镜
34-FIB扫描系统

Claims (5)

1.一种用于制作和放置薄片(11)的装置,包含聚焦离子束柱(3)、扫描电子显微镜柱(2)和具有工作台(4)的样本腔室(1),所述工作台(4)用于定位实现沿着三个相互垂直的轴线倾斜、旋转及移动的至少两个样本(8),其中所述倾斜是围绕垂直于由所述聚焦离子束柱(3)的轴线和由所述扫描电子显微镜柱(2)的轴线所界定的平面的轴线实现,并且所述旋转是围绕所述竖直轴线实现,所述装置还包含由针(6)终止的机械手(5),所述机械手(5)能围绕其自身轴线移动和旋转,特征在于所述机械手(5)定位于由所述聚焦离子束柱(3)的所述轴线和由所述扫描电子显微镜柱(2)的所述轴线所界定的所述平面中。
2.如权利要求1所述的用于制作和放置薄片(11)的装置,特征在于所述机械手(5)放置为与水平位置成0°-35°的角度。
3.如前述权利要求中任一项所述的用于制作和放置薄片(11)的装置,特征在于所述机械手(5)定位为较靠近所述聚焦离子束柱(3)。
4.如前述权利要求中任一项所述的用于制作和放置薄片(11)的装置,特征在于所述工作台(4)经调整以围绕所述旋转的轴线放置所述样品(8)。
5.如前述权利要求中任一项所述的用于制作和放置薄片(11)的装置,特征在于还包含进气系统(10)。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080073535A1 (en) * 2006-06-23 2008-03-27 Liang Hong Planar view sample preparation
US20080296498A1 (en) * 2007-06-01 2008-12-04 Fei Company In-situ STEM sample preparation
US20140361165A1 (en) * 2013-06-05 2014-12-11 Fei Company Method for imaging a sample in a charged particle apparatus
US20150206706A1 (en) * 2014-01-22 2015-07-23 Hitachi High-Tech Science Corporation Charged particle beam apparatus and sample observation method
US20160042914A1 (en) * 2014-08-07 2016-02-11 Frederick Wight Martin Achromatic dual-fib instrument for microfabrication and microanalysis

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7834315B2 (en) * 2007-04-23 2010-11-16 Omniprobe, Inc. Method for STEM sample inspection in a charged particle beam instrument
EP2765591B1 (en) * 2013-02-08 2016-07-13 FEI Company Sample preparation stage
WO2016067039A1 (en) * 2014-10-29 2016-05-06 Omniprobe, Inc Rapid tem sample preparation method with backside fib milling

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080073535A1 (en) * 2006-06-23 2008-03-27 Liang Hong Planar view sample preparation
US20080296498A1 (en) * 2007-06-01 2008-12-04 Fei Company In-situ STEM sample preparation
US20140361165A1 (en) * 2013-06-05 2014-12-11 Fei Company Method for imaging a sample in a charged particle apparatus
US20150206706A1 (en) * 2014-01-22 2015-07-23 Hitachi High-Tech Science Corporation Charged particle beam apparatus and sample observation method
US20160042914A1 (en) * 2014-08-07 2016-02-11 Frederick Wight Martin Achromatic dual-fib instrument for microfabrication and microanalysis

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