CN112164729A - Double-end perovskite heterogeneous crystalline silicon laminated solar cell with high light conversion efficiency and preparation method thereof - Google Patents

Double-end perovskite heterogeneous crystalline silicon laminated solar cell with high light conversion efficiency and preparation method thereof Download PDF

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CN112164729A
CN112164729A CN202011184124.1A CN202011184124A CN112164729A CN 112164729 A CN112164729 A CN 112164729A CN 202011184124 A CN202011184124 A CN 202011184124A CN 112164729 A CN112164729 A CN 112164729A
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徐成
其他发明人请求不公开姓名
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Abstract

The invention discloses a double-end perovskite heterogeneous crystalline silicon tandem solar cell with high light conversion efficiency and a preparation method thereof. The perovskite hetero-crystalline silicon tandem solar cell with high light conversion efficiency comprises a hetero-crystalline silicon solar cell serving as a bottom cell, a tunneling layer and a perovskite solar cell based on a pin structure (inverted structure) serving as a top cell. The structure of the two-end laminated solar cell sequentially comprises a metal bottom electrode, a transparent conducting layer, a p-type amorphous silicon layer, an intrinsic amorphous silicon layer, crystalline silicon, an intrinsic amorphous silicon layer, an n-type amorphous silicon layer, a tunneling layer, a hole transmission layer, a perovskite absorption layer, an electron transmission layer, a top electrode buffer layer, a transparent electrode, a metal grid line electrode and an antireflection layer from bottom to top. The laminated solar cell and the preparation method thereof are based on high-efficiency heterojunction solar cell preparation, and have the advantages of simple preparation process, low cost, high light conversion efficiency and great large-scale commercialization prospect.

Description

Double-end perovskite heterogeneous crystalline silicon laminated solar cell with high light conversion efficiency and preparation method thereof
Technical Field
The invention relates to the technical field of solar cells, in particular to a laminated solar cell, and specifically relates to a two-end perovskite heterogeneous crystalline silicon laminated solar cell with high light conversion efficiency and a preparation method thereof.
Background
At present, the solar energy industry develops briskly and the main photovoltaic product is a crystalline silicon solar cell, the mass production efficiency is over 22 percent at present, and the record of the silicon solar cell in a laboratory is 26.7 percent, which is close to the SQ theoretical limit of single-junction silicon efficiency by 30 percent. In order to further reduce the cost of photovoltaic Balance of systems (BOS), it is necessary to further develop a photovoltaic solar cell technology that is lower in cost and more efficient. The two-end laminated solar cell provides a preferable technical path for further improving the efficiency of the single-junction silicon solar cell. The perovskite solar cell has the advantages of adjustable forbidden band width, simple preparation process, low cost and the like, so that the perovskite can be superposed on the silicon solar cell to prepare ultrahigh-efficiency two-end solar energy.
Disclosure of Invention
The invention provides a double-end perovskite heterogeneous crystalline silicon tandem solar cell with high light conversion efficiency and a preparation method thereof, and aims to solve the problems.
According to the perovskite hetero-crystalline silicon tandem solar cell with high light conversion efficiency, the hetero-junction silicon solar cell is used as a bottom cell, a tunneling layer and a top cell of the perovskite solar cell based on a pin structure (inverted structure); the heterojunction silicon solar cell structurally comprises a metal bottom electrode, a transparent conducting layer, a p-type amorphous silicon layer, an intrinsic amorphous silicon layer 1, crystalline silicon, an intrinsic amorphous silicon layer 2 and an n-type amorphous silicon layer from bottom to top in sequence.
Preferably, the top cell of the perovskite solar cell based on the pin structure (inverted structure) has a structure comprising a hole transport layer, a perovskite absorption layer, an electron transport layer, a top electrode buffer layer, a transparent electrode, a metal grid line electrode and an antireflection layer from bottom to top in sequence.
Preferably, the tunneling layer at least includes any one or a combination of ITO, IZO, AZO, In2O3, Ag nanowire, graphene, conductive metal (gold, silver, aluminum, or copper).
Preferably, the crystalline silicon comprises any one of p-type silicon or n-type silicon, the resistivity of the p-type silicon is 0.1-20ohm cm, the thickness of the p-type silicon is 100-800 μm, the resistivity of the n-type silicon is 0.1-20ohm cm, the thickness of the n-type silicon is 100-800 μm, the back surface of the crystalline silicon is a textured structure or a diamond wire cutting back surface structure, and the front surface of the crystalline silicon is a pyramid textured structure, a diamond wire cutting back surface structure or a polishing structure.
Preferably, the transparent conductive layer comprises at least ITO or AZO; the thickness of the p-type amorphous silicon layer is 0-100 nm; the thickness of the intrinsic amorphous silicon layer 1 is 0-100 nm; the thickness of the intrinsic amorphous silicon layer 2 is 0-100 nm; the thickness of the n-type amorphous silicon layer is 0-100 nm.
Preferably, the hole transport layer comprises one or more of PTAA, P3HT, Poly-TPD, NiOx, V2O5, MoOx, PEDOT PSS, WOx, Spiro-OMeTAD, CuSCN, Cu2O, m-MTDATA CuI, Spiro-TTB, F4-TCNQ, F6-TCNNQ, or TAPC in combination and has a thickness of 0-500 nm.
Preferably, the perovskite light absorbing layer has the general formula ABX3, wherein a is a monovalent cation, including but not limited to any one of lithium (Li), sodium (Na), potassium (K), cesium (Cs), rubidium (Rb), an amine group, or an amidino group, and B is a divalent cation: including, but not limited to, any of lead (Pb), tin (Sn), tungsten (W), copper (Cu), zinc (Zn), gallium (Ga), selenium (Se), rhodium (Rh), germanium (Ge), arsenic (As), palladium (Pd), silver (Ag), gold (Au), indium (In), antimony (Sb), mercury (Hg), iridium (Ir), Thallium (TI), bismuth (Bi), and X is a monovalent anion: including, but not limited to, any of iodine (I), bromine (Br), chlorine (Cl), or astatine (At).
Preferably, the perovskite component in the perovskite light absorption layer is Cs0.05FA0.80MA0.15PbI2.55Br0.45, wherein Cs is cesium, FA is formamidin group, MA is methylamino group, and I is iodine, and the thickness of the light absorption layer in the perovskite light absorption layer is 0.05-30 μm.
Preferably, the electron transport layer comprises at least one of SnO2, TiO2, ZnO, ZrO2, fullerene and derivatives (C60, C70, PCBM), TiSnOx or SnZnOx; the top electrode buffer layer comprises at least one of SnO2, In2O3, V2O5, MoOx, Ag, Au, Cu, SnO2, ZnO, TiO2, Al2O3, SiO2, Si3N4, PMMA, PEIE, microcrystalline silicon or amorphous silicon; the transparent electrode is at least one of ITO, IZO, AZO, graphene, metal nanowires including but not limited to Ag, Au, Cu or Al.
In order to solve the technical problem, a method for preparing a two-end perovskite hetero-crystalline silicon tandem solar cell with high light conversion efficiency is provided, and the method for preparing the two-end perovskite hetero-crystalline silicon tandem solar cell with high light conversion efficiency comprises the following steps:
texturing on the surface of a silicon wafer;
depositing and preparing an intrinsic amorphous silicon layer 1, an intrinsic amorphous silicon layer 2, a p-type amorphous silicon layer and an n-type amorphous silicon layer on the crystalline silicon;
depositing a transparent conducting layer on the surface plated with the p-type amorphous layer;
preparing a bottom battery metal bottom electrode on the obtained transparent electrode;
preparing a tunneling layer on the surface of the n-type amorphous silicon layer;
preparing a hole transport layer on the tunneling layer;
preparing a perovskite absorption layer on the electron transport layer;
preparing an electron transport layer on the perovskite absorption layer;
depositing a top electrode buffer layer on the electron transport layer;
preparing a transparent electrode on the top electrode buffer layer;
preparing a metal grid line electrode on the transparent electrode;
and preparing the anti-reflection layer.
The technical scheme provided by the embodiment of the application can have the following beneficial effects:
the application designs a two-end perovskite hetero-crystalline silicon tandem solar cell with high light conversion efficiency and a preparation method thereof, a bottom cell of high-efficiency hetero-crystalline silicon and a top cell of a perovskite solar cell based on a pin structure are adopted, the photoelectric efficiency can be obtained to be higher than the level reached by the current commercial solar cell, the cost of the solar cell is low, the BOS cost of a photovoltaic system is reduced, and the industrial application prospect is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a two-terminal perovskite hetero-crystalline silicon tandem solar cell with high light conversion efficiency according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for manufacturing a two-terminal perovskite hetero-crystalline silicon tandem solar cell with high light conversion efficiency according to an embodiment of the present invention.
Description of reference numerals:
100. the perovskite heterogeneous crystalline silicon tandem solar cell with high light conversion efficiency at two ends; 10. heterojunction silicon solar cells; 20. perovskite solar cells based on pin structures; 101. a metal bottom electrode; 102. a transparent conductive layer; 103. a p-type amorphous silicon layer; 104. an intrinsic amorphous silicon layer (1); 105. crystalline silicon; 106. an intrinsic amorphous silicon layer (2); 107. an n-type amorphous silicon layer; 108. a tunneling layer; 109. a hole transport layer; 110. a perovskite light-absorbing layer; 111. an electron transport layer; 112. a top electrode buffer layer; 113. a transparent electrode; 114. a metal gate line electrode; 115. an anti-reflection layer; 200. a method for preparing a double-end perovskite hetero-crystalline silicon tandem solar cell 100 with high light conversion efficiency.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is also to be understood that the terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in the specification of the present invention and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should be further understood that the term "and/or" as used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.
Referring to fig. 1, the present invention discloses a two-terminal perovskite hetero-crystalline silicon tandem solar cell 100 with high light conversion efficiency, wherein the two-terminal perovskite hetero-crystalline silicon tandem solar cell 100 with high light conversion efficiency comprises a hetero-junction silicon solar cell 10 as a bottom cell, a tunneling layer 108, and a perovskite solar cell 20 based on a pin structure (inverted structure) as a top cell; the heterojunction silicon solar cell 10 sequentially comprises a metal bottom electrode 101, a transparent conducting layer 102, a p-type amorphous silicon layer 103, an intrinsic amorphous silicon layer (1)104, crystalline silicon 105, an intrinsic amorphous silicon layer (2)106 and an n-type amorphous silicon layer 107 from bottom to top.
The application designs a two-end perovskite hetero-crystalline silicon tandem solar cell 100 with high light conversion efficiency, and adopts a bottom cell of a high-efficiency hetero-junction silicon solar cell 10 and a top cell of a perovskite solar cell 20 based on a pin structure, so that the cost of the solar cell is low, the BOS cost of a photovoltaic system is reduced, and the industrial application prospect is improved.
The metal bottom electrode 101 is one or more of aluminum, silver, titanium, palladium, nickel, chromium or copper, and the thickness of the metal bottom electrode is 1-2000 mu m.
The transparent conductive layer 102 at least comprises ITO or AZO, and the thickness of the transparent conductive layer is 0-200 nm.
The thickness of the p-type amorphous silicon layer 103 is 0-50 nm;
the thickness of the intrinsic amorphous silicon layer (1)104 is 0-50 nm;
the crystalline silicon 105 comprises any one of p-type silicon or n-type silicon, the resistivity of the p-type silicon is 0.1-20ohm cm, the thickness of the p-type silicon is 100-800 micrometers, the resistivity of the n-type silicon is 0.1-20ohm cm, the thickness of the n-type silicon is 100-800 micrometers, the back surface of the crystalline silicon 105 is a textured structure or a diamond wire cutting back surface structure, and the front surface of the crystalline silicon 105 is a pyramid textured structure, a diamond wire cutting back surface structure or a polishing structure.
The thickness of the intrinsic amorphous silicon layer (2)106 is 0-50 nm;
the thickness of the n-type amorphous silicon layer 107 is 0-50 nm.
The tunneling layer 108 comprises ITO, IZO, AZO, In2O3One or a combination of several of Ag nanowire, graphene and conductive metal (gold, silver, aluminum or copper), wherein the thickness of the tunneling layer 108 is 0-1000 nm.
The hole transport layer 109 comprises PTAA, P3HT、Poly-TPD、NiOx、V2O5、MoOx、PEDOT:PSS、WOx、Spiro-OMeTAD、CuSCN、Cu2One or more of O, m-MTDATA CuI, Spiro-TTB, F4-TCNQ, F6-TCNNQ or TAPC, and the thickness of the hole transport layer 109 is 0-500 nm.
The perovskite light absorption layer 110 has a general formula ABX3Wherein A is a monovalent cation: including but not limited to one or more cations of lithium (Li), sodium (Na), potassium (K), cesium (Cs), rubidium (Rb), amine groups, or amidino groups, B is a divalent cation: including but not limited to lead (Pb), tin (Sn), tungsten (W), copper (Cu), zinc (Zn), gallium (Ga), seleniumOne or more cations of (Se), rhodium (Rh), germanium (Ge), arsenic (As), palladium (Pd), silver (Ag), gold (Au), indium (In), antimony (Sb), mercury (Hg), iridium (Ir), Thallium (TI) and bismuth (Bi), wherein X is a monovalent anion: including but not limited to one or more anions of iodine (I), bromine (Br), chlorine (Cl), or astatine (At); preferably the perovskite component is Cs0.05FA0.80MA0.15PbI2.55Br0.45Wherein Cs is cesium, FA is formamidino, MA is methylamino, and I is iodine. The thickness of the perovskite light absorption layer 110 is 0.05-30 μm.
The electron transport layer 111 comprises SnO2、TiO2、ZnO、ZrO2Fullerene and derivatives (C60, C70, PCBM), TiSnOxOr SnZnOxThe thickness of the electron transport layer 111 is 0-500 nm.
The top electrode buffer layer 112 is SnO2,In2O3、V2O5、MoOx、Ag、Au、Cu、SnO2、ZnO、TiO2、Al2O3、SiO2、Si3N4One or a combination of more of PMMA, PEIE, microcrystalline silicon or amorphous silicon, and the thickness of the material is 0-50 nm.
The transparent electrode 113 is one or more of ITO, IZO, AZO, graphene, including but not limited to Ag, Au, Cu or Al metal nanowires, and has a thickness of 0-500 nm.
The metal grid line electrode 114 is one or more of Au, Ag, Cu or Al metal electrodes, and the thickness of the metal grid line electrode is 0-20 μm.
The anti-reflection layer 115 comprises LiF, MgF2、AlN、ZnS、Si3N4、SiO2、TiO2Or one or a combination of a plurality of flexible films with suede structures, and the thickness of the flexible films is 0-3 mm.
Referring to fig. 2, the present application further provides a method 200 for fabricating a two-terminal perovskite hetero-crystalline silicon tandem solar cell 100 with high light conversion efficiency, which comprises the following steps:
and S1, texturing on the surface of the silicon wafer.
Specifically, the method comprises the following steps: the surface of the crystalline silicon 105 is textured using, but not limited to, an alkaline solution.
And S2, depositing an intrinsic amorphous silicon layer 1, an intrinsic amorphous silicon layer 2, a p-type amorphous silicon layer and an n-type amorphous silicon layer on the crystalline silicon.
Specifically, the method comprises the following steps: the deposition preparation of the intrinsic amorphous silicon layer (1)104, the intrinsic amorphous silicon layer (2)106, the p-type amorphous silicon layer 103 and the n-type amorphous silicon layer 107 is carried out on the crystalline silicon by adopting but not limited to PECVD.
And S3, depositing a transparent conducting layer on the surface plated with the p-type amorphous layer.
Specifically, the method comprises the following steps: depositing the transparent conducting layer 102 on the surface plated with the p-type amorphous silicon layer 103 obtained in the step 2 by using but not limited to magnetron sputtering
And S4, preparing a bottom battery metal bottom electrode on the obtained transparent electrode.
Specifically, the method comprises the following steps: and (3) preparing a bottom battery metal bottom electrode 101 on the transparent electrode obtained in the step 3 by using, but not limited to, evaporation, printing or electroplating methods.
And S5, preparing a tunneling layer on the surface of the n-type amorphous silicon layer.
Specifically, the method comprises the following steps: the tunneling layer 108 is fabricated on the silicon emissive passivation layer using methods such as, but not limited to, thermal growth, atomic deposition (ALD), magnetron sputtering, thermal evaporation, or Plasma Enhanced Chemical Vapor Deposition (PECVD).
And S6, preparing a hole transport layer on the tunneling layer.
Specifically, the method comprises the following steps: the hole transport layer 109 is formed on the tunneling layer by, but not limited to, spin coating, evaporation, sputtering, spray coating, thermal spray decomposition, blade coating, printing, or slit coating.
S7, preparing a perovskite absorption layer on the electron transport layer.
Specifically, the method comprises the following steps: the perovskite light absorbing layer 110 is fabricated on the electron transport layer using, but not limited to, spin coating, evaporation, sputtering, spray coating, thermal spray decomposition, blade coating, printing, or slot coating methods.
S8, preparing an electron transport layer on the perovskite absorption layer.
Specifically, the method comprises the following steps: the electron transport layer 111 is prepared on the perovskite absorber layer using, but not limited to, spin coating, evaporation, sputtering, spray coating, thermal spray decomposition, blade coating, printing, or slot coating methods.
S9, depositing a top electrode buffer layer on the electron transport layer.
Specifically, the method comprises the following steps: depositing a top electrode buffer layer 112 on the electron transport layer; preparation of V by, but not limited to, sputtering, atomic deposition (ALD) or evaporation2O5、MoOx、Ag、Au、Cu、SnO2、ZnO、TiO2、Al2O3、SiO2、Si3N4One or more of PMMA, BCP, PEIE microcrystalline silicon or amorphous silicon.
And S10, preparing a transparent electrode on the top electrode buffer layer.
Specifically, the method comprises the following steps: the transparent electrode 113 is prepared on the top electrode buffer layer using, but not limited to, sputtering, atomic deposition (ALD) or evaporation methods.
And S11, preparing a metal grid line electrode on the transparent electrode.
Specifically, the method comprises the following steps: the metal gate line electrode 114 is fabricated on the transparent electrode by, but not limited to, evaporation, printing or electroplating.
S12, preparing the anti-reflection layer.
Specifically, the method comprises the following steps: the antireflection layer 115 is prepared by a method of evaporation, sputtering or atomic deposition (ALD), but not limited to, so that the preparation of the two-end perovskite hetero-crystalline silicon tandem solar cell with high light conversion efficiency is completed.
In an alternative embodiment, silver electrode/ITO/P-type amorphous Si H layer/intrinsic amorphous Si H layer/P-type silicon/intrinsic amorphous Si H layer/n-type amorphous Si H layer/In is used2O3The perovskite heterojunction crystalline silicon tandem solar cell with high light conversion efficiency is prepared by adopting a/Poly-TPD/perovskite/C60/BCP/ultrathin Cu metal electrode structure.
The preparation process comprises the following steps:
300um crystalline silicon 105 with resistivity of 1-5ohm-cm is prepared by a suspension zone melting method; the crystalline silicon 105 is a p-type silicon wafer; etching the back of the p-type silicon wafer by using alkali; preparing an intrinsic amorphous silicon layer (1)104, an intrinsic amorphous silicon layer (2)106, a p-type amorphous silicon layer 103 and an n-type amorphous silicon layer 107 with the nanometer size on two sides of a p-type silicon wafer by a PECVD method respectively; preparing a 120nm transparent conducting layer 102 on the surface of the p-type amorphous silicon layer 103 by adopting magnetron sputtering; evaporating a 2-micrometer silver electrode on the surface of the transparent conducting layer 102 to prepare a metal bottom electrode 101; preparing 40nm In2O3 serving as a tunneling layer 108 on the front surface of the silicon wafer through sputtering, treating the surface of the tunneling layer 108 with ozone, directly spin-coating a Poly-TPD solution on the front surface of the silicon wafer, and annealing to obtain a hole transport layer 109; preparing a perovskite light absorption layer 110 with the component CsFAMAPbBr by a one-step method, wherein the thickness is 500 nm; preparing a 25nm C60 electron transport layer 111 by adopting an evaporation method; and a 7nm top electrode buffer layer 112, the top electrode buffer layer 112 being a BCP buffer layer; the transparent electrode 113 was formed by directly plating an 8nm copper transparent conductive film. The thicknesses of the metal gate line electrode 114 and the anti-reflection layer 115 are both 0. Through the IV performance test, the tandem solar cell device obtained an open circuit voltage of 1.83V and a photoelectric conversion efficiency of 19.5%.
In an alternative embodiment, a silver electrode/ITO/p-type amorphous Si: H layer/intrinsic amorphous Si: H layer/N-type silicon/intrinsic amorphous Si: H layer/N-type amorphous Si: H layer/ITO/NiO: PTAA/perovskite/SnO 2/ITO/Ag metal grid wire/MgF 2 antireflection layer structure is adopted to prepare the perovskite hetero-crystalline silicon tandem solar cell with high light conversion efficiency at two ends.
The preparation process comprises the following steps:
260um crystalline silicon 105 with resistivity of 1-5ohm-cm prepared by a suspension zone melting method; the crystalline silicon 105 is an n-type silicon wafer; texturing the back of an n-type silicon wafer by using alkali; preparing an intrinsic amorphous silicon layer (1)104, an intrinsic amorphous silicon layer (2)106, a p-type amorphous silicon layer 103 and an n-type amorphous silicon layer 107 with the nanometer size on two sides of an n-type silicon wafer by a PECVD method respectively; preparing a 120nm transparent conducting layer 102 on the surface of the p-type amorphous silicon layer 103 by adopting magnetron sputtering; evaporating a 2-micrometer silver electrode on the surface of the transparent conducting layer 102 to prepare a metal bottom electrode 101; preparing 80nm ITO on the front surface of the silicon wafer as a tunneling layer 108 through sputtering, sputtering 15nm NiO on the front surface of the tunneling layer 108, treating the surface with ozone, directly spin-coating a PTAA solution on the surface, and annealing to obtain NiO, namely a hole transport layer 109 of PTAA; preparing a perovskite light absorption layer 110 with the component CsFAMAPbBr by a one-step method, wherein the thickness is 500 nm; preparing a 25nm C60 electron transport layer 111 by adopting an evaporation method; preparing a top electrode buffer layer 112 of 5nm SnO2 by using an ALD method; the transparent electrode 113 was formed by directly plating an 8nm copper transparent conductive film. The 150nm metal grid line electrode 114 is prepared by a sputtering method, the silver metal grid line electrode 114 is prepared by thermal silver evaporation, and the 120nm MgF2 antireflection layer 115 is evaporated to finally obtain the perovskite hetero-crystalline silicon laminated solar cell 100 with high light conversion efficiency at two ends. Through the IV performance test, the tandem solar cell device obtained an open circuit voltage of 1.82V and a photoelectric conversion efficiency of 25.67%, which is higher than the efficiency of the silicon solar cell on the market.
The application provides a preparation method 200 of a two-end perovskite hetero-crystalline silicon tandem solar cell 100 with high light conversion efficiency, which adopts a bottom cell of a high-efficiency hetero-junction silicon solar cell 10 and a top cell of a perovskite solar cell 20 based on a pin structure, so that the cost of the solar cell is low, the BOS cost of a photovoltaic system is reduced, and the industrial application prospect is improved.
While the invention has been described with reference to specific embodiments, the invention is not limited thereto, and various equivalent modifications and substitutions can be easily made by those skilled in the art within the technical scope of the invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (10)

1. The utility model provides a both ends perovskite heterocrystal silicon tandem solar cell that light conversion efficiency is high which characterized in that: the solar cell comprises a heterojunction silicon solar cell as a bottom cell, a tunneling layer and a top cell of a perovskite solar cell based on a pin structure (inverted structure); the heterojunction silicon solar cell structurally comprises a metal bottom electrode, a transparent conducting layer, a p-type amorphous silicon layer, an intrinsic amorphous silicon layer 1, crystalline silicon, an intrinsic amorphous silicon layer 2 and an n-type amorphous silicon layer from bottom to top in sequence.
2. The high photoconversion efficiency two-terminal perovskite hetero-crystalline silicon tandem solar cell as claimed in claim 1, wherein: the top cell of the perovskite solar cell based on the pin structure (inverted structure) is sequentially provided with a hole transport layer, a perovskite absorption layer, an electron transport layer, a top electrode buffer layer, a transparent electrode, a metal grid line electrode and an antireflection layer from bottom to top.
3. The high photoconversion efficiency two-terminal perovskite hetero-crystalline silicon tandem solar cell as claimed in claim 1, wherein: the tunneling layer comprises any one or a combination of ITO, IZO, AZO, In2O3, Ag nanowires, graphene, conductive metals (gold, silver, aluminum, or copper).
4. The high photoconversion efficiency two-terminal perovskite hetero-crystalline silicon tandem solar cell as claimed in claim 1, wherein: the crystalline silicon comprises any one of p-type silicon or n-type silicon, the resistivity of the p-type silicon is 0.1-20ohm cm, the thickness of the p-type silicon is 100-800 micrometers, the resistivity of the n-type silicon is 0.1-20ohm cm, the thickness of the n-type silicon is 100-800 micrometers, the back surface of the crystalline silicon is a textured surface structure or a diamond wire cutting back surface structure, and the front surface of the crystalline silicon is a pyramid textured surface structure, a diamond wire cutting back surface structure or a polishing structure.
5. The high photoconversion efficiency two-terminal perovskite hetero-crystalline silicon tandem solar cell as claimed in claim 1, wherein: the transparent conducting layer at least comprises ITO or AZO; the thickness of the p-type amorphous silicon layer is 0-100 nm; the thickness of the intrinsic amorphous silicon layer 1 is 0-100 nm; the thickness of the intrinsic amorphous silicon layer 2 is 0-100 nm; the thickness of the n-type amorphous silicon layer is 0-100 nm.
6. The high photoconversion efficiency two-terminal perovskite hetero-crystalline silicon tandem solar cell according to claim 2, wherein the hole transport layer comprises a combination of one or more of PTAA, P3HT, Poly-TPD, NiOx, V2O5, MoOx, PEDOT PSS, WOx, Spiro-OMeTAD, CuSCN, Cu2O, m-MTDATA CuI, Spiro-TTB, F4-TCNQ, F6-TCNNQ, or TAPC, and has a thickness of 0-500 nm.
7. The high photoconversion efficiency two-terminal perovskite hetero-crystalline silicon tandem solar cell as claimed in claim 2, wherein: the perovskite light absorption layer has a general formula ABX3, wherein A is a monovalent cation, the A includes but is not limited to any one of lithium (Li), sodium (Na), potassium (K), cesium (Cs), rubidium (Rb), an amine group or an amidino group, and B is a divalent cation: including, but not limited to, any of lead (Pb), tin (Sn), tungsten (W), copper (Cu), zinc (Zn), gallium (Ga), selenium (Se), rhodium (Rh), germanium (Ge), arsenic (As), palladium (Pd), silver (Ag), gold (Au), indium (In), antimony (Sb), mercury (Hg), iridium (Ir), Thallium (TI), bismuth (Bi), and X is a monovalent anion: including, but not limited to, any of iodine (I), bromine (Br), chlorine (Cl), or astatine (At).
8. The high photoconversion efficiency two-terminal perovskite hetero-crystalline silicon tandem solar cell according to claim 7, wherein: the perovskite component in the perovskite light absorption layer is Cs0.05FA0.80MA0.15PbI2.55Br0.45, wherein Cs is cesium, FA is formamidino, MA is methylamino, I is iodine, and the thickness of the light absorption layer in the perovskite light absorption layer is 0.05-30 mu m.
9. The high photoconversion efficiency two-terminal perovskite hetero-crystalline silicon tandem solar cell as claimed in claim 2, wherein: the electron transport layer comprises at least one of SnO2, TiO2, ZnO, ZrO2, fullerene and derivatives (C60, C70, PCBM), TiSnOx or SnZnOx; the top electrode buffer layer comprises at least one of SnO2, In2O3, V2O5, MoOx, Ag, Au, Cu, SnO2, ZnO, TiO2, Al2O3, SiO2, Si3N4, PMMA, PEIE, microcrystalline silicon or amorphous silicon; the transparent electrode is at least one of ITO, IZO, AZO, graphene, metal nanowires including but not limited to Ag, Au, Cu or Al.
10. A method for manufacturing a two-terminal perovskite hetero-crystalline silicon tandem solar cell with high light conversion efficiency, according to claim 2, wherein the method comprises the following steps:
texturing on the surface of a silicon wafer;
depositing and preparing an intrinsic amorphous silicon layer 1, an intrinsic amorphous silicon layer 2, a p-type amorphous silicon layer and an n-type amorphous silicon layer on the crystalline silicon;
depositing a transparent conducting layer on the surface plated with the p-type amorphous layer;
preparing a bottom battery metal bottom electrode on the obtained transparent electrode;
preparing a tunneling layer on the surface of the n-type amorphous silicon layer;
preparing a hole transport layer on the tunneling layer;
preparing a perovskite absorption layer on the electron transport layer;
preparing an electron transport layer on the perovskite absorption layer;
depositing a top electrode buffer layer on the electron transport layer;
preparing a transparent electrode on the top electrode buffer layer;
preparing a metal grid line electrode on the transparent electrode;
and preparing the anti-reflection layer.
CN202011184124.1A 2020-10-29 2020-10-29 Double-end perovskite heterogeneous crystalline silicon laminated solar cell with high light conversion efficiency and preparation method thereof Pending CN112164729A (en)

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