CN210156403U - Tandem type perovskite/homojunction silicon tandem solar cell - Google Patents
Tandem type perovskite/homojunction silicon tandem solar cell Download PDFInfo
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- CN210156403U CN210156403U CN201920998041.2U CN201920998041U CN210156403U CN 210156403 U CN210156403 U CN 210156403U CN 201920998041 U CN201920998041 U CN 201920998041U CN 210156403 U CN210156403 U CN 210156403U
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/354—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-insulator-semiconductor [m-i-s] structure
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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Abstract
The utility model discloses a tandem type perovskite/homojunction silicon tandem solar cell. The tandem solar cell includes an n-type homojunction crystalline silicon solar cell based on a PERC (passivated emitter back contact cell) structure as a bottom cell and a perovskite solar cell with a transparent electrode as a top cell. The structure of the laminated solar cell is sequentially a metal bottom electrode, a bottom electrode opening passivation layer, a local or whole n-type heavily doped layer, n-type silicon, a p-type heavily doped emitter, an emitter passivation layer, a tunneling layer, an electron transmission layer, a perovskite absorption layer, a hole transmission layer, a top electrode buffer layer, a transparent electrode, a metal grid line electrode and a antireflection film from bottom to top. The utility model discloses a tandem solar cell is based on the homojunction PREC solar crystal silicon battery of present photovoltaic industry mainstream, and preparation simple process, the preparation cost is low, and light conversion efficiency is high, has very strong commercial prospect, is applicable to extensive industrial production.
Description
Technical Field
The utility model relates to a solar cell technical field relates to a tandem solar cell, concretely relates to tandem type perovskite/homojunction silicon tandem solar cell.
Background
The solar energy is an important factor in the development of new energy due to the inexhaustible, pollution-free, noise-free and convenient use of the solar energy. The solar cell has high efficiency and cost close to the flat price of on-line electricity, and becomes a promising and competitive clean energy.
At present, among photovoltaic cells, the solar cell mainly commercialized is a silicon solar cell, and currently occupies the mainstream position of market share. Since the theoretical limit photoelectric conversion efficiency of the single-junction silicon solar cell is about 30%, while the conversion efficiency of the silicon solar cell on the market is about 22%, the conversion efficiency is close to the theoretical limit of the efficiency. In order to further reduce the manufacturing cost of the photovoltaic system, further development of low-cost and high-efficiency solar cells is urgently needed.
The laminated solar cell provides a good technical path for further improving the efficiency of the single junction silicon solar cell. Specifically, in the technical path, the solar cell with high forbidden band width is superposed on the silicon solar cell with low forbidden band width, so that the absorption of solar energy is widened, and the limit theoretical efficiency can be improved to be more than 40%. In the solar cell with wide forbidden band width, the perovskite solar cell has high absorption coefficient, simple preparation process and low cost because the forbidden band width of the light absorption layer of the perovskite solar cell is adjustable, and is very suitable for being placed on silicon to prepare a high-efficiency laminated solar cell, so the perovskite silicon laminated solar cell becomes a hotspot for researching and developing novel low-cost high-efficiency solar cells at present. Most of the tandem perovskite-crystalline silicon laminates reported at present mainly overlap perovskite solar cells and heterojunction silicon solar cells, but the heterojunction silicon solar cells are not commercialized in a large scale, so that the preparation cost is high. The existing market is mainly a crystalline silicon solar cell based on diffused junction, and the preparation of a laminated solar cell based on diffused junction crystalline silicon and perovskite has better commercial prospect. In order to further reduce the cost of photovoltaic cells, it becomes very significant to develop crystalline silicon solar cells based on diffused junctions, in particular PERC-based crystalline silicon solar cells, high-efficiency tandem perovskite silicon tandem solar cells.
SUMMERY OF THE UTILITY MODEL
In order to solve the above-mentioned problem that exists among the prior art, the utility model provides a technical solution does:
the tandem type perovskite/homojunction silicon laminated solar cell comprises a metal bottom electrode, a bottom electrode opening passivation layer, a partial or whole n-type heavily doped layer, n-type silicon, a p-type heavily doped emitter, an emitter passivation layer, a tunneling layer, an electron transmission layer, a perovskite light absorption layer, a hole transmission layer, a top electrode buffer layer, a transparent electrode, a metal grid line electrode and a reflection reduction layer.
The metal bottom electrode is one or more of aluminum, silver, titanium, palladium, nickel, chromium or copper, and the thickness of the metal bottom electrode is 1-2000 mu m.
The bottom electrode opening passivation layer is Si3N4、Al2O3、SiO2、AlN、InSb、SiC、TiO2One or more of microcrystalline silicon and amorphous silicon, and the thickness is 0-20 nm.
The partial or total n-type heavily doped layer 3 is partially or totally doped.
The resistivity of the n-type silicon is 0.1-20ohm cm, the back surface of the n-type silicon is a suede structure, and the front surface of the n-type silicon is a suede or polished structure; the doping depth of the p-type heavily doped emitter is 0.5-10 mu m.
The emitter passivation layer is Si3N4、Al2O3、SiO2、AlN、InSb、SiC、TiO2One or more of microcrystalline silicon and amorphous silicon, and the thickness is 0-20 nm.
The tunneling layer is one or more of ITO, IZO, AZO, Ag nanowires, graphene and conductive metal (gold, silver, aluminum or copper), and the thickness of the tunneling layer is 0-500 nm.
The electron transport layer is SnO2、TiO2、ZnO、ZrO2Fullerene and derivatives (C60, C70, PCBM), TiSnOxOr SnZnOxOne or more of them, the thickness is 0-500 nm; the general formula of the perovskite light absorption layer is ABX3Wherein A is a monovalent cation: including but not limited to one or more cations of lithium (Li), sodium (Na), potassium (K), cesium (Cs), rubidium (Rb), amine groups, or amidino groups, B is a divalent cation: including but not limited to one or more cations of lead (Pb), tin (Sn), tungsten (W), copper (Cu), zinc (Zn), gallium (Ga), selenium (Se), rhodium (Rh), germanium (Ge), arsenic (As), palladium (Pd), silver (Ag), gold (Au), indium (In), antimony (Sb), mercury (Hg), iridium (Ir), Thallium (TI), bismuth (Bi), X is a monovalent anion: including but not limited to one or more anions of iodine (I), bromine (Br), chlorine (Cl), or astatine (At), and the light absorbing layer has a thickness of 0.05-30 μm.
The hole transport layer is PTAA or NiOx、P3HT、V2O5、MoOx、PEDOT:PSS、WOx、Sprio-OMeTAD、CuSCN、Cu2One or more of O, CuI, Spiro-TTB, F4-TCNQ, F6-TCNNQ, m-MTDATA or TAPC, and the thickness is 0-500 nm; the top electrode buffer layer is V2O5、MoOx、Ag、Au、Cu、SnO2、ZnO、TiO2、Al2O3、SiO2、Si3N4One or more of PMMA, microcrystalline silicon or amorphous silicon, and the thickness is 0-50 nm.
The transparent electrode is one or more of ITO, IZO, AZO, graphene, Ag, Au and Cu metal nanowires, and the thickness of the transparent electrode is 0-500 nm.
The metal grid electrode is one or more of Au, Ag, Cu or Al metal electrodes, and the thickness of the metal grid electrode is 0-20 mu m.
The anti-reflection layer is LiF or MgF2、AlN、ZnS、Si3N4、SiO2、TiO2Or one or more flexible adhesive films with suede structures, and the thickness of the adhesive films is 0-3 mm.
The utility model provides a preparation method of tandem type perovskite/homojunction silicon tandem solar cell includes following step:
step 1: the method is characterized in that the surface of a silicon wafer is subjected to texturing by using, but not limited to, an alkaline solution.
Step 2: the heavily doped junctions are formed by, but not limited to, partial or full phosphorus diffusion to the silicon backside using a phosphorus hospital.
And step 3: and diffusing boron on the front side of the battery to form a homogeneous pn junction by adopting a method of but not limited to tubular boron diffusion or chain boron diffusion.
And 4, step 4: a bottom electrode opening passivation layer is prepared on the back side of the silicon by a method including but not limited to thermal growth, atomic deposition (ALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).
And 5: and opening the passivation layer on the back of the silicon by using a method of, but not limited to, laser etching the opening. The opening of the passivation layer on the back of the silicon can be a point array or a line array, the etching line width is 1-500 mu m, and the distance is 0.1-5mm.
Step 6: the bottom electrode is prepared on the back side of the silicon by using but not limited to evaporation or printing method.
And 7: an emitter passivation layer is prepared on the front surface of the silicon by a method including but not limited to thermal growth, atomic deposition (ALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).
And 8: the tunneling layer is fabricated on the silicon emissive passivation layer using methods including, but not limited to, thermal growth, atomic deposition (ALD), magnetron sputtering, thermal evaporation, or Plasma Enhanced Chemical Vapor Deposition (PECVD).
And step 9: the electron transport layer is prepared on the tunneling layer using, but not limited to, spin coating, evaporation, sputtering, spray coating, thermal spray decomposition, blade coating, printing, or slot coating methods.
Step 10: the perovskite absorber layer is prepared on the electron transport layer using, but not limited to, spin coating, evaporation, sputtering, spray coating, thermal spray decomposition, blade coating, printing, or slot coating methods.
Step 11: the hole transport layer is prepared on the perovskite absorption layer using, but not limited to, spin coating, evaporation, sputtering, spray coating, thermal spray decomposition, blade coating, printing, or slot coating methods.
Step 12: the top electrode buffer layer is deposited on the hole transport layer using, but not limited to, sputtering, atomic deposition (ALD), or evaporation methods.
Step 13: the transparent electrode is prepared on the top electrode buffer layer by using, but not limited to, sputtering, atomic deposition (ALD) or evaporation method.
Step 14: and preparing the metal grid line electrode on the transparent electrode by adopting a method without limitation of evaporation, printing or electroplating.
Step 15: and (3) preparing the antireflection layer by adopting a method without limitation of evaporation, sputtering or atomic deposition (ALD) to complete the preparation of the laminated solar cell.
The utility model discloses a tandem type perovskite/homojunction silicon tandem solar cell, solar power station can be used to this type of battery, and solar energy building integration occasion has very wide application prospect. The battery has the remarkable characteristics of low cost, high efficiency and the like.
The present invention will be described in further detail with reference to the accompanying drawings.
The utility model provides a tandem type perovskite/homojunction silicon tandem solar cell and preparation method thereof, solar power station can be used to this type of battery, and solar energy building integration occasion has very wide application prospect. The battery has the remarkable characteristics of low cost, high efficiency and the like.
Drawings
Fig. 1 is a schematic view of a tandem perovskite/homojunction silicon tandem solar cell according to the present invention.
The light-absorbing and reflecting thin film transistor comprises a metal bottom electrode 1, a bottom electrode opening passivation layer 2, a partial or full n-type heavily-doped junction 3, n-type silicon 4, a p-type heavily-doped emitter 5, an emitter passivation layer 6, a tunneling layer 7, an electron transmission layer 8, a perovskite light-absorbing layer 9, a hole transmission layer 10, a top electrode buffer layer 11, a transparent electrode 12, a metal grid line electrode 13 and a antireflection layer 14.
Detailed Description
In order to make the technical solution of the present invention better understood by those skilled in the art, the present invention will be described in detail with reference to the accompanying drawings and the detailed description.
Referring to fig. 1, the utility model discloses a tandem type perovskite/homojunction silicon tandem solar cell, specific structure is as shown in fig. 1, from the bottom up includes metal bottom electrode 1, bottom electrode trompil passivation layer 2, local or whole n type heavily doped layer 3, n type silicon 4, p type heavily doped emitter 5, emitter passivation layer 6, tunnel layer 7, electron transport layer 8, perovskite light-absorbing layer 9, hole transport layer 10, top electrode buffer layer 11, transparent electrode 12, metal grid line electrode 13, subtract anti-layer 14.
The metal bottom electrode 1 is one or more of aluminum, silver, titanium, palladium, nickel, chromium or copper, and the thickness is 1-2000 μm.
The bottom electrode opening passivation layer 2 is Si3N4、Al2O3、SiO2、AlN、InSb、SiC、TiO2One or more of microcrystalline silicon and amorphous silicon, and the thickness is 0-20 nm.
The partial or total n-type heavily doped layer 3 is partially or totally doped.
The resistivity of the n-type silicon 4 is 0.1-20ohm cm, the back surface of the n-type silicon is of a suede structure, and the front surface of the n-type silicon is of a suede or polished structure.
The doping depth of the p-type heavily doped emitter 5 is 0.5-10 μm.
The emitter passivation layer 6 is Si3N4、Al2O3、SiO2、AlN、InSb、SiC、TiO2One or more of microcrystalline silicon and amorphous silicon, and the thickness is 0-20 nm.
The tunneling layer 7 is one or more of ITO, IZO, AZO, Ag nanowires, graphene and conductive metal (gold, silver, aluminum or copper), and the thickness is 0-500 nm.
The electron transport layer 8 is SnO2、TiO2、ZnO、ZrO2Fullerene and derivatives (C60, C70, PCBM), TiSnOxOr SnZnOxOne or more of them, the thickness is 0-500 nm.
The general formula of the perovskite light absorption layer 9 is ABX3Wherein A is a monovalent cation: including but not limited to one or more cations of lithium (Li), sodium (Na), potassium (K), cesium (Cs), rubidium (Rb), amine groups, or amidino groups, B is a divalent cation: including but not limited to one or more cations of lead (Pb), tin (Sn), tungsten (W), copper (Cu), zinc (Zn), gallium (Ga), selenium (Se), rhodium (Rh), germanium (Ge), arsenic (As), palladium (Pd), silver (Ag), gold (Au), indium (In), antimony (Sb), mercury (Hg), iridium (Ir), Thallium (TI), bismuth (Bi), X is a monovalent anion: including but not limited to one or more anions of iodine (I), bromine (Br), chlorine (Cl), or astatine (At), and the light absorbing layer has a thickness of 0.05-30 μm.
The hole transport layer 10 is PTAA, NiOx、P3HT、V2O5、MoOx、PEDOT:PSS、WOx、Sprio-OMeTAD、CuSCN、Cu2One or more of O, CuI, Spiro-TTB, F4-TCNQ, F6-TCNNQ, m-MTDATA or TAPC, and the thickness is 0-500 nm.
The top electrode buffer layer 11 is V2O5、MoOx、Ag、Au、Cu、SnO2、ZnO、TiO2、Al2O3、SiO2、Si3N4One or more of PMMA, microcrystalline silicon or amorphous silicon, and the thickness is 0-50 nm.
The transparent electrode 12 is one or more of ITO, IZO, AZO, graphene, Ag, Au and Cu metal nanowires, and the thickness is 0-500 nm.
The metal grid line electrode 13 is one or more of Au, Ag, Cu or Al metal electrodes, and the thickness is 0-20 μm.
The anti-reflection layer 14 is LiF or MgF2、AlN、ZnS、Si3N4、SiO2、TiO2Or one or more flexible adhesive films with suede structures, and the thickness of the adhesive films is 0-3 mm.
The utility model provides a preparation method of tandem type perovskite/homojunction silicon tandem solar cell includes following step:
step 1: texturing of the n-type silicon 4 surface with, but not limited to, an alkaline solution is employed.
Step 2: a heavily doped junction is formed by, but not limited to, a phosphorus hospital to form a heavily doped layer 3 of n-type locally or fully diffused phosphorus on the back side of silicon.
And step 3: and (3) diffusing boron on the front surface of the battery by adopting a method of, but not limited to, tubular boron diffusion or chain boron diffusion to form the p-type heavily-doped emitter 5.
And 4, step 4: a bottom electrode passivation layer is prepared on the back side of the silicon using methods such as, but not limited to, thermal growth, atomic deposition (ALD), or Plasma Enhanced Chemical Vapor Deposition (PECVD).
And 5: and preparing a bottom electrode opening passivation layer 2 in the bottom electrode opening by adopting a method of but not limited to laser etching opening. The openings of the passivation layer 2 for the bottom electrode openings can be point arrays or line arrays, the etching line width is 1-500 mu m, and the distance is 0.1-5mm.
Step 6: the metal bottom electrode 1 is prepared on the back of the silicon by using but not limited to evaporation or printing method.
And 7: an emitter passivation layer 6 is prepared on the front surface of the silicon using methods such as, but not limited to, thermal growth, atomic deposition (ALD), or Plasma Enhanced Chemical Vapor Deposition (PECVD).
And 8: the tunneling layer 7 is fabricated on the silicon emissive passivation layer by methods including, but not limited to, thermal growth, atomic deposition (ALD) magnetron sputtering, thermal evaporation, or Plasma Enhanced Chemical Vapor Deposition (PECVD).
And step 9: the electron transport layer 8 is prepared on the tunneling layer using, but not limited to, spin coating, evaporation, sputtering, spray coating, thermal spray decomposition, blade coating, printing, or slot coating methods.
Step 10: the perovskite absorber layer 9 is fabricated on the electron transport layer using, but not limited to, spin coating, evaporation, sputtering, spray coating, thermal spray decomposition, blade coating, printing, or slot coating methods.
Step 11: the hole transport layer 10 is prepared on the perovskite absorption layer using, but not limited to, spin coating, evaporation, sputtering, spray coating, thermal spray decomposition, blade coating, printing, or slot coating methods.
Step 12: the top electrode buffer layer 11 is deposited on the hole transport layer using, but not limited to, sputtering, atomic deposition (ALD), or evaporation methods.
Step 13: the transparent electrode 12 is prepared on the top electrode buffer layer 11 using, but not limited to, a sputtering, atomic deposition (ALD), or evaporation method.
Step 14: the metal grid line electrode 13 is prepared on the transparent electrode 12 by, but not limited to, evaporation, printing or electroplating.
Step 15: the anti-reflection layer 14 is prepared on the metal grid line electrode 13 by using a method without limitation of evaporation, sputtering or atomic deposition (ALD), and the preparation of the laminated solar cell is completed.
The following is described in more detail with specific examples:
examples 1
In this example, silver electrode/n +/SiO was used2N-type silicon/p +/SnO2A tandem perovskite/homojunction silicon tandem solar cell is prepared through a perovskite light absorption layer/spiral-OMeTAD/ultrathin Cu/Ag metal electrode structure.
The preparation process comprises the following steps: an n-type silicon chip 4 with the resistivity of 5ohm-cm is prepared by a suspension zone melting method; texturing the back of an n-type silicon wafer by using alkali; carrying out phosphorus diffusion on the back surface of the n-type silicon wafer 4 to form all n-type heavily doped layers 3; boron is expanded on the front side to form a pn homojunction to form a p-type heavily doped emitter 5, and the junction depth is 2 mu m; preparation of SiO by thermal growth on silicon cell surface2After the ultrathin passivation layer is formed, local opening is carried out to prepare a bottom electrode opening passivation layer 2; finally, evaporating a 1-micron silver electrode to prepare a metal bottom electrode 1; direct ozone treatment on the front surface of a silicon wafer to obtain ultrathin SiO2An emitter passivation layer 6; SnO is directly coated on the front surface of a silicon wafer in a spin coating manner2Carrying out post-annealing on the nanocrystalline solution to obtain a hole transport layer 8; preparation of CH by one-step method3NH3PbI3The perovskite light absorption layer 9; preparation of Spiro-OMeTAD by spin coatingObtaining a hole transport layer 10; the cell transparent electrode 12 is formed by direct plating of 2nm copper and 8nm gold. The thicknesses of the rest tunneling layers 7, the top electrode buffer layer 11 and the transparent electrode 12 are all 0. Through IV performance tests, the series perovskite/homojunction silicon tandem solar cell device obtains an open-circuit voltage of 1.65V, a short-circuit current density of 9.9mA/cm2, a fill factor of 0.84 and a photoelectric conversion efficiency of 13.7%.
EXAMPLES example 2
In this example, silver electrode/n +/SiO was used2N-type silicon/p +/SiO2/SnO2Perovskite light absorption layer/cyclone-OMeTAD/MoOxITO/Ag gate electrode/MgF2The tandem perovskite/homojunction silicon tandem solar cell is structurally prepared.
The preparation process comprises the following steps: an n-type silicon chip 4 with the resistivity of 5ohm-cm is prepared by a suspension zone melting method; texturing the back of an n-type silicon wafer by using alkali; carrying out phosphorus diffusion on the back surface of the n-type silicon wafer 4 to form all n-type heavily doped layers 3; boron is expanded on the front side to form a pn homojunction to form a p-type heavily doped emitter 5, and the junction depth is 3 mu m; preparation of SiO by thermal growth on silicon cell surface2After the ultrathin passivation layer is formed, local opening is carried out to prepare a bottom electrode opening passivation layer 2; finally, evaporating a 1-micron silver electrode to prepare a metal bottom electrode 1; direct ozone treatment on the front surface of a silicon wafer to obtain ultrathin SiO2An emitter passivation layer 6; SnO on front surface of silicon wafer2Carrying out post-annealing on the nanocrystalline solution to obtain a hole transport layer 8; preparation of Cs by one-step method0.05FA0.80MA0.15PbI3The perovskite light absorption layer 9; preparing a Spiro-OMeTAD by adopting a spin coating method to obtain a hole transport layer 10; thermal evaporation method for evaporating 20nm MoOxPreparing a buffer layer 11; preparing a 100nm ITO transparent electrode 12 by a sputtering method; preparing a 100nm Ag gate electrode 13 by a thermal evaporation method; the 150nm LiF antireflection film 14 was prepared by an evaporation method. The tunneling layer 7 in this example is 0 a thick. Through IV performance tests, the series perovskite/homojunction silicon tandem solar cell device obtains an open-circuit voltage of 1.75V, a short-circuit current density of 16.0mA/cm2, a fill factor of 0.80 and a photoelectric conversion efficiency of 22.4%.
EXAMPLE 3
The true bookIn the examples, silver electrode/n +/SiO was used2N-type silicon/p +/SiO2/ITO/SnO2Perovskite light absorption layer/cyclone-OMeTAD/MoOxITO/Ag gate electrode/MgF2The tandem perovskite/homojunction silicon tandem solar cell is structurally prepared.
The preparation process comprises the following steps: an n-type silicon chip 4 with the resistivity of 5ohm-cm is prepared by a suspension zone melting method; texturing the back of an n-type silicon wafer by using alkali; carrying out phosphorus diffusion on the back surface of the n-type silicon wafer 4 to form all n-type heavily doped layers 3; boron is expanded on the front side to form a pn homojunction to form a p-type heavily doped emitter 5, and the junction depth is 3 mu m; preparation of SiO by thermal growth on silicon cell surface2After the ultrathin passivation layer is formed, local opening is carried out to prepare a bottom electrode opening passivation layer 2; finally, evaporating a 1-micron silver electrode to prepare a metal bottom electrode 1; direct ozone treatment on the front surface of a silicon wafer to obtain ultrathin SiO2An emitter passivation layer 6; preparing a 20nm ITO tunneling layer 7 on the front surface of the silicon wafer by a sputtering method; spin coating SnO on the tunneling layer 72Carrying out post-annealing on the nanocrystalline solution to obtain a hole transport layer 8; preparation of Cs by one-step method0.05FA0.80MA0.15PbI3The perovskite light absorption layer 9; preparing a Spiro-OMeTAD by adopting a spin coating method to obtain a hole transport layer 10; evaporation of 20nm MoO by thermal evaporationxPreparing a buffer layer 11; preparing a 100nm ITO transparent electrode 12 by a sputtering method; preparing a 100nm Ag gate electrode 13 by a thermal evaporation method; the 150nm LiF antireflection film 14 was prepared by an evaporation method. Through IV performance tests, the series perovskite/homojunction silicon tandem solar cell device obtains an open-circuit voltage of 1.73V, a short-circuit current density of 15.9mA/cm2, a fill factor of 0.77 and a photoelectric conversion efficiency of 21.2%.
The aforesaid is only the utility model discloses a three concrete embodiment, nevertheless the utility model discloses a design concept is not limited to this, and the ordinary use of this design is right the utility model discloses carry out immaterial change, all should belong to the action that infringes the protection scope of the utility model.
Claims (14)
1. A tandem perovskite/homojunction silicon tandem solar cell, characterized by: the laminated solar cell comprises a metal bottom electrode, a bottom electrode opening passivation layer, a local or whole n-type heavily doped layer, n-type silicon, a p-type heavily doped emitter, an emitter passivation layer, a tunneling layer, an electron transmission layer, a perovskite light absorption layer, a hole transmission layer, a top electrode buffer layer, a transparent electrode, a metal grid line electrode and a reflection reducing layer.
2. The tandem perovskite/homojunction silicon tandem solar cell of claim 1, wherein: the metal bottom electrode is one or more of aluminum, silver, titanium, palladium, nickel, chromium or copper, and the thickness of the metal bottom electrode is 1-2000 mu m.
3. The tandem perovskite/homojunction silicon tandem solar cell of claim 1, wherein: the bottom electrode opening passivation layer is Si3N4、Al2O3、SiO2，AlN、InSb、SiC、TiO2One or more of microcrystalline silicon and amorphous silicon, and the thickness is 0-20 nm.
4. The tandem perovskite/homojunction silicon tandem solar cell of claim 1, wherein: the resistivity of the n-type silicon is 0.1-20ohm cm, the back surface of the n-type silicon is of a suede structure, and the front surface of the n-type silicon is of a suede structure or a polished structure.
5. The tandem perovskite/homojunction silicon tandem solar cell of claim 1, wherein: the p-type heavily doped depth is 0.5-10 μm, and the diffusion sheet resistance is 1-150 ohm/sq.
6. The tandem perovskite/homojunction silicon tandem solar cell of claim 1, wherein: the emitter passivation layer Si3N4、Al2O3、SiO2、AlN、InSb、SiC、TiO2One or more of microcrystalline silicon and amorphous silicon, and the thickness is 0-20 nm.
7. The tandem perovskite/homojunction silicon tandem solar cell of claim 1, wherein: the tunneling layer is one or more of ITO, IZO, AZO, Ag nanowires, graphene, gold, silver, aluminum or copper, and the thickness of the tunneling layer is 0-500 nm.
8. The tandem perovskite/homojunction silicon tandem solar cell of claim 1, wherein: the electron transport layer is SnO2、TiO2、ZnO、ZrO2、C60、C70、PCBM、TiSnOxOr SnZnOxOne or more of them, the thickness is 0-500 nm.
9. The tandem perovskite/homojunction silicon tandem solar cell of claim 1, wherein: the general formula of the perovskite light absorption layer is ABX3Wherein A is a monovalent cation: including but not limited to one or more cations of lithium (Li), sodium (Na), potassium (K), cesium (Cs), rubidium (Rb), amine groups, or amidino groups, B is a divalent cation: including but not limited to one or more cations of lead (Pb), tin (Sn), tungsten (W), copper (Cu), zinc (Zn), gallium (Ga), selenium (Se), rhodium (Rh), germanium (Ge), arsenic (As), palladium (Pd), silver (Ag), gold (Au), indium (In), antimony (Sb), mercury (Hg), iridium (Ir), Thallium (TI), bismuth (Bi), X is a monovalent anion: including but not limited to one or more anions of iodine (I), bromine (Br), chlorine (Cl), or astatine (At); the thickness of the light absorbing layer is 0.05-30 μm.
10. The tandem perovskite/homojunction silicon tandem solar cell according to claim 1, wherein the hole transport layer is PTAA, NiOx、P3HT、V2O5、MoOx、PEDOT:PSS、WOx、Sprio-OMeTAD、CuSCN、Cu2One or more of O, CuI, Spiro-TTB, F4-TCNQ, F6-TCNNQ, m-MTDATA or TAPC, and the thickness is 0-500 nm.
11. The tandem perovskite/homojunction silicon tandem solar cell of claim 1, wherein: the top electrode buffer layer is V2O5、MoOx、Ag、Au、Cu、SnO2、ZnO、TiO2、Al2O3、SiO2、Si3N4One or more of PMMA, microcrystalline silicon or amorphous silicon, and the thickness is 0-50 nm.
12. The tandem perovskite/homojunction silicon tandem solar cell of claim 1, wherein: the transparent electrode is one or more of ITO, IZO, AZO, graphene, metal nanowires including but not limited to Ag, Au, Cu or Al, and the thickness of the transparent electrode is 0-500 nm.
13. The tandem perovskite/homojunction silicon tandem solar cell of claim 1, wherein: the metal grid electrode is one or more of Au, Ag, Cu or Al metal electrodes, and the thickness of the metal grid electrode is 0-20 mu m.
14. The tandem perovskite/homojunction silicon tandem solar cell of claim 1, wherein: the anti-reflection layer is LiF or MgF2、AlN、ZnS、Si3N4、SiO2、TiO2Or one or more flexible adhesive films with suede structures, and the thickness of the adhesive films is 0-3 mm.
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