CN114530524A - Solar laminated cell and preparation method thereof - Google Patents
Solar laminated cell and preparation method thereof Download PDFInfo
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- CN114530524A CN114530524A CN202210084664.5A CN202210084664A CN114530524A CN 114530524 A CN114530524 A CN 114530524A CN 202210084664 A CN202210084664 A CN 202210084664A CN 114530524 A CN114530524 A CN 114530524A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 16
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- 238000005240 physical vapour deposition Methods 0.000 claims description 20
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 16
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
The invention discloses a preparation method of a solar laminated cell and the solar laminated cell, wherein the preparation method of the solar laminated cell comprises the following steps: taking a silicon solar cell with a polysilicon stacked silicon oxide surface structure as a silicon bottom cell of the stacked cell; cleaning the silicon bottom battery; depositing a tunneling layer on a top surface of the silicon bottom cell; and manufacturing a perovskite top cell on the top surface of the tunneling layer, wherein the perovskite top cell comprises a first carrier transmission layer, a perovskite absorption layer, a second carrier transmission layer, a buffer layer, a transparent window layer and a top electrode which are deposited in sequence, and obtaining the solar laminated cell. According to the preparation method of the solar laminated cell, a tunneling passivation contact poly-Si/SiOx structure is selected as a tunneling layer contact surface, and the tunneling passivation contact of the perovskite top cell and the silicon bottom cell can be well realized by combining the perovskite top cell based on the PIN structure, so that the perovskite-crystalline silicon laminated solar cell with high efficiency is obtained.
Description
Technical Field
The invention relates to the technical field of new energy, in particular to a solar laminated cell and a preparation method thereof.
Background
The development in the photovoltaic field is always aimed at reducing costs and improving the photoelectric conversion efficiency, wherein the battery is a significant technological revolution in the photovoltaic industry chain.
Because the energy distribution of the spectrum of the sunlight is wide, any existing semiconductor material can only absorb photons of which the energy is matched with the forbidden bandwidth value, photons with smaller energy in the sunlight penetrate through the cell and are absorbed by back electrode metal and converted into heat energy, and photons with larger energy in the sunlight exceed the forbidden bandwidth and have excess energy, and the excess energy is transferred to lattice atoms of the cell material through the energy heat release effect of a photon-generated carrier and causes the material to generate heat; therefore, for a single-junction solar cell, even if the cell is made of a crystalline material, the limit of mass production conversion efficiency is generally only about 25%.
The solar spectrum can be divided into several continuous parts, if the cell is made of materials with the energy band width which is best matched with the parts and the materials are overlapped from outside to inside according to the sequence of the band gaps from large to small, the light with the shortest wavelength is utilized by the outermost wide-gap material cell, the light with the longer wavelength can be transmitted into the cell to be utilized by the material cell with the narrower band gap, and the possibility of changing the light energy into electric energy is realized to the maximum extent, and the cell with the structure is the laminated solar cell. Among the existing tandem solar cells, the perovskite crystalline silicon solar cell is the most cost-effective solar cell with low cost and high efficiency. The most reported at present are solar cells based on perovskites and heterojunction crystalline silicon. Due to the high open voltage of the hetero-crystalline silicon solar cell, better perovskite crystalline silicon lamination efficiency can be obtained. However, at the present stage, the cost of the heterojunction crystalline silicon solar cell is relatively high, which results in high cost of the preparation lamination. Further in the implementation examples, the intermediate layer of the perovskite heterojunction generally requires a thicker tunneling layer (about 80-120nm) which also increases the cost of its fabrication as well as optical losses.
In specific implementation, based on the consideration of manufacturing cost, the design difficulty of a double-layer laminated cell is that a proper crystalline silicon bottom cell structure is selected as a bottom cell, and how to optimally set a connection structure between the two is adopted.
Disclosure of Invention
In order to solve the problems, the invention provides a preparation method of a perovskite crystalline silicon solar laminated cell and the solar laminated cell, wherein a crystalline silicon bottom cell based on an N-type TOPCon structure or a POLO structure is adopted as a bottom cell, a tunneling passivation contact poly-Si/SiOx structure is selected as a tunneling layer contact surface, an ultrathin tunneling layer is innovatively adopted and applied to a poly-Si surface, and the tunneling passivation contact between the perovskite top cell and the silicon bottom cell can be well realized by combining with a perovskite top cell based on a PIN structure, so that the high-efficiency perovskite-crystalline silicon laminated cell is obtained. Compared with a heterojunction solar cell, the crystalline silicon bottom cell based on the N-type TOPCon structure or the POLO structure has the advantages of high open-circuit voltage and good thermal stability, is compatible with the existing production line production, and can be used for directly preparing a low-cost semi-finished silicon solar bottom cell from the production line. The ultrathin tunneling layer can reduce light absorption while ensuring efficient recombination of current carriers of the bottom cell and the top cell, so that the perovskite crystalline silicon solar cell with high efficiency and low cost is prepared.
Correspondingly, the invention provides a preparation method of a solar laminated cell, which comprises the following steps:
taking a silicon solar cell with a polysilicon-silicon oxide laminated structure as a silicon bottom cell of the laminated cell;
cleaning the silicon bottom battery;
depositing a tunneling layer on a top surface of the silicon bottom cell;
and manufacturing a perovskite top cell on the top surface of the tunneling layer, wherein the perovskite top cell comprises a first carrier transmission layer, a perovskite absorption layer, a second carrier transmission layer, a buffer layer, a transparent window layer and a top electrode which are deposited in sequence, and obtaining the solar laminated cell.
In an alternative embodiment, the silicon bottom cell of the solar tandem cell is a TOPCon solar cell or a POLO solar cell.
In an alternative embodiment, depositing a tunneling layer on the top surface of the silicon bottom cell comprises:
depositing a tunneling layer on the top surface of the silicon bottom cell by a PVD process or an RPD process;
the tunneling layer is made of ITO, IZO, AZO, IWO and SnO2One of ZnO, strontium indium oxide and IXO; or the tunneling layer is made of the ITO, IZO, AZO, IWO and SnO2ZnO, strontium indium oxide and IXO;
the thickness of the tunneling layer is in a range of [1nm,30nm ].
In an optional embodiment, the perovskite roof cell includes a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a buffer layer, a transparent window layer, and a top electrode deposited in this order, and includes:
depositing a first carrier transport layer on the top surface of the tunneling layer by one of a PVD process, an RPD process, a thermal evaporation process, a near-space sublimation process, a vapor transport deposition process, and a spray process;
the first carrier transmission layer is made of PTAA and NiOx、P3HT、V2O5、MoOx、PEDOT:PSS、WOx、CuSCN、Cu2One of O, CuI, Spiro-TTB and self-assembled monolayer SAMs;
or the material of the first carrier transmission layer is selected from PTAA and NiOx、P3HT、V2O5、MoOx、PEDOT:PSS、WOx、CuSCN、Cu2More than two materials of O, CuI, Spiro-TTB and self-assembled monolayer SAMs;
the thickness of the first carrier transport layer is in the range of [1nm,100nm ].
In an alternative embodiment, the perovskite roof cell includes a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a buffer layer, a transparent window layer, and a top electrode deposited in this order, including:
preparing a perovskite absorption layer on the top surface of the first carrier transport layer by a coating method or an ink-jet printing method;
the perovskite absorption layer is made of more than one blended material, and the chemical general formula of the blended material is ABX3Wherein A is a monovalent cation, B is a divalent cation, and X is a monovalent anion;
the thickness of the perovskite absorption layer is in the range of [300nm,5000nm ].
In an optional embodiment, the perovskite roof cell includes a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a buffer layer, a transparent window layer, and a top electrode deposited in this order, and includes:
preparing a second carrier transport layer on the top surface of the perovskite absorption layer by one of a PVD process, an RPD process, a thermal evaporation process, a near-space sublimation process, a vapor transport deposition, a chemical vapor deposition, an atomic layer deposition process;
the second carrier transport layer is made of SnO2、TiO2、ZnO、ZrO2One of fullerene, fullerene derivative, TiSnOx and SnZnOx; or the material of the second carrier transport layer is SnO2、TiO2、ZnO、ZrO2More than two materials of fullerene, fullerene derivative, TiSnOx and SnZnOx;
the thickness of the second carrier transport layer is in a value range of [5nm,100nm ].
In an optional embodiment, the perovskite roof cell includes a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a buffer layer, a transparent window layer, and a top electrode deposited in this order, and includes:
preparing the buffer layer on the top surface of the second carrier transport layer by one of a PVD process, an RPD process, a thermal evaporation process, a near space sublimation process, a vapor transport deposition process, a chemical vapor deposition process, an atomic layer deposition process;
the buffer layer is made of metal oxide;
the thickness of the buffer layer is in a range of [0nm,30nm ].
In an optional embodiment, the perovskite roof cell includes a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a buffer layer, a transparent window layer, and a top electrode deposited in this order, and includes:
preparing a transparent window layer on the top surface of the buffer layer by a PVD process or an RPD process;
the transparent window layer is made of ITO, IZO, AZO, IWO and SnO2One of ZnO, strontium indium oxide and IXO;
or the material of the transparent window layer is ITO, IZO, AZO, IWO or SnO2ZnO, strontium indium oxide and IXO;
the thickness of the transparent window layer is in the range of [50nm,200nm ].
In an optional embodiment, the perovskite roof cell includes a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a buffer layer, a transparent window layer, and a top electrode deposited in this order, and includes:
preparing a top electrode on the top surface of the transparent window layer by a screen printing process, an electroplating process, a laser transfer printing process or a thermal evaporation process;
the top electrode is made of one of Ag, Cu, Ni or Al;
or the material of the top electrode is composed of more than two of Ag, Cu, Ni or Al;
the thickness value range of the top electrode is [10um,100um ].
Correspondingly, the invention also provides a solar laminated cell which is characterized by being prepared based on the preparation method of the solar laminated cell.
The invention provides a preparation method of a solar laminated cell and the solar laminated cell, wherein a crystalline silicon bottom cell based on an N-type TOPCon structure or a POLO structure is adopted, a tunneling passivation contact poly-Si/SiOx structure is selected as a tunneling layer contact surface, an ultrathin tunneling layer is innovatively adopted to be applied to the surface of poly-Si, and the tunneling passivation contact between a perovskite top cell and a silicon bottom cell can be well realized by combining a perovskite top cell based on a PIN structure, so that a high-efficiency perovskite-crystalline silicon laminated solar cell is obtained, the processing cost can be effectively reduced, and the production yield of products can be improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic cross-sectional view of a solar tandem cell according to an embodiment of the invention.
Fig. 2 is a flowchart of a method for manufacturing a solar tandem cell according to an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to the attached drawings, fig. 1 shows a schematic cross-sectional structure of a solar tandem cell according to an embodiment of the present invention. Basically, the embodiment of the invention provides a solar laminated cell which comprises a silicon bottom cell, a tunneling layer 9 and a perovskite top cell.
The silicon bottom cell is a silicon solar cell with a polycrystalline silicon laminated silicon oxide surface structure, and the top cell is a perovskite cell based on a PIN structure; the tunneling layer 9 is disposed on the top surface of the silicon bottom cell, i.e., the poly-Si/SiOx side, and the perovskite cell is disposed on the tunneling layer.
It should be noted that the silicon solar cell having the polysilicon stacked silicon oxide surface structure may be a TOPCon structure solar cell or a POLO structure solar cell.
The silicon bottom cell in the solar laminated cell selects the surface structure of polycrystalline silicon laminated silicon oxide as a tunneling layer contact surface, and is combined with a perovskite top cell based on a PIN structure, so that tunneling passivation contact between the perovskite top cell and the silicon bottom cell can be well realized, and the high-efficiency perovskite-crystalline silicon laminated solar cell is obtained. Compared with a heterojunction solar cell, the crystal silicon bottom cell based on the TOPCon structure or the POLO structure has the advantages of high open-circuit voltage and good thermal stability, is compatible with the existing production line production, and can be used for directly preparing a low-cost semi-finished silicon solar bottom cell from the production line. The perovskite battery has the characteristic of simple processing technology, and the solar laminated battery formed by combining the perovskite battery and the solar laminated battery can well take balance among photoelectric efficiency, production cost and product yield into consideration. The ultrathin tunneling layer can reduce light absorption while ensuring efficient recombination of current carriers of the bottom cell and the top cell, so that the perovskite crystalline silicon solar cell with high efficiency and low cost is prepared.
Specifically, the silicon bottom battery of the embodiment of the invention can adopt a TOPCon structure bottom battery, and the basic structure of the silicon bottom battery is as follows: the solar cell comprises a back electrode 1, a back antireflection layer 2, a back passivation layer 3, a P-type doping layer 4, an N-type silicon substrate 6, a silicon oxide passivation layer 7 and an N-type polycrystalline silicon passivation layer 8 which are sequentially stacked from bottom to top.
Optionally, the silicon bottom cell in the embodiment of the present invention may adopt a bottom cell with a POLO structure, and its basic structure is: the silicon-based solar cell comprises a back electrode, a back antireflection layer, a P-type polycrystalline silicon passivation layer, a silicon oxide passivation layer, an N-type silicon substrate, a silicon oxide passivation layer and an N-type polycrystalline silicon passivation layer which are sequentially stacked from bottom to top.
Specifically, the silicon bottom cell shown in fig. 1 of the accompanying drawings is a TOPCon structure solar cell.
Specifically, the N-type silicon substrate plays a role in photoelectric conversion in the solar bottom cell according to the embodiment of the present invention, and as the solar bottom cell, the design target is to have a larger open-circuit voltage and a lower surface contact resistance. The structural difference between the POLO structure solar cell and the TOPCon structure solar cell mainly lies in the structure below an N-type silicon substrate, and for the TOPCon structure bottom cell, a P-type doping layer, a back passivation layer and a back antireflection layer are sequentially arranged below the N-type silicon substrate; for the bottom cell with the POLO structure, a silicon oxide passivation layer, a P-type polycrystalline silicon passivation layer, a back antireflection layer and a back electrode are sequentially arranged below the N-type silicon substrate.
In specific implementation, the thickness of the silicon oxide passivation layer needs to be smaller than a certain value, and the silicon oxide passivation layer can prevent electrons excited by light from randomly moving and combining with holes in advance so as to achieve the functions of preventing minority carriers from reaching an interface and ensuring that majority carriers reach the interface, according to experimental statistics, the recombination current density J0 of the battery can be smaller than 10fA/cm2, and the hidden open circuit voltage (iVoc) of the battery exceeds 720 mV.
Specifically, in the crystalline silicon solar cell, a metal-semiconductor contact region is seriously compounded and becomes an important factor for restricting the efficiency development of the crystalline silicon solar cell, and in the solar bottom cell provided by the embodiment of the invention, a silicon oxide passivation layer and an N-type polycrystalline silicon passivation layer are combined to form an ultrathin surface tunneling passivation structure, so that the efficiency of the solar cell can be greatly improved.
Specifically, in the TOPCon structure bottom battery according to the embodiment of the present invention, a component structure without material designation is adopted, and the following alternative embodiments are provided:
the bottom electrode is made of one of aluminum, silver, nickel and copper, or a mixture of more than two of the aluminum, silver, nickel and copper; optionally, the thickness of the bottom electrode is in a range of [10 μm,100 μm ].
The material of the back antireflection layer is one of silicon nitride, silicon oxynitride and silicon oxide, or a mixture of more than two of the materials; optionally, the thickness of the back antireflection layer is in a range of [0nm,200nm ].
The back passivation layer is made of one of aluminum oxide, silicon oxide and tin oxide, or a mixture of more than two of the materials; optionally, the thickness of the back passivation layer is in a range of [0nm,200nm ].
The thickness of the N-type silicon substrate is in a value range of [120 μm,350 μm ], and optionally, the resistivity of the thickness of the N-type silicon substrate is in a value range of [0.1ohm cm, 20ohm cm ].
Optionally, the thickness of the silicon oxide passivation layer ranges from [0nm,20nm ].
Optionally, the thickness of the N-type polysilicon passivation layer ranges from [0nm, 100nm ].
Specifically, in the POLO structure bottom battery according to the embodiment of the present invention, a component structure named without a material is adopted, and the optional implementation manner is as follows:
the bottom electrode is made of one of aluminum, silver, nickel and copper, or a mixture of more than two of the aluminum, silver, nickel and copper; optionally, the thickness of the bottom electrode is in a range of [1 μm,100 μm ].
The material of the back anti-reflection layer is one of silicon nitride, silicon oxynitride and silicon oxide, or a mixture of more than two of the materials; optionally, the thickness of the back antireflection layer is in a range of [0nm,200nm ].
Optionally, the thickness of the P-type polysilicon passivation layer ranges from [0nm, 100nm ].
The thickness of the N-type silicon substrate is in a value range of [120 μm,350 μm ], and optionally, the resistivity of the thickness of the N-type silicon substrate is in a value range of [0.1ohm cm, 20ohm cm ].
Optionally, the thickness of the silicon oxide passivation layer ranges from [0nm,20nm ].
Optionally, the thickness of the N-type polysilicon passivation layer ranges from [0nm, 100nm ].
Basically, the perovskite top battery of the embodiment of the invention comprises a first carrier transport layer 10, a perovskite light absorption layer 11, a second carrier transport layer 12, a buffer layer 13 and a transparent window layer 14 which are sequentially stacked; and a plurality of top electrode grid lines 15 are led out from the top surface of the transparent window layer.
Specifically, the implementation of the present invention provides some optional implementation manners for the specific implementation structure of the ultra-thin tunneling layer 9.
Specifically, a tunneling layer is deposited on the top surface of the silicon bottom cell through a PVD or RPD process, the tunneling layer may be a TCO tunneling layer, the tunneling layer is made of one or more materials selected from ITO, IZO, AZO, IWO, SnO2, ZnO, strontium indium oxide, and IXO, and the thickness of the tunneling layer is in a range of [1nm,30nm ].
In particular, the implementation of the invention provides some alternative embodiments for the specific implementation structure of the perovskite roof battery.
Specifically, the material of the first carrier transport layer is PTAA, NiOx、P3HT、V2O5、MoOx、PEDOT:PSS、WOx、CuSCN、Cu2One of O, CuI, Spiro-TTB and self-assembled monolayer SAMs;
or the material of the first carrier transmission layer is selected from PTAA and NiOx、P3HT、V2O5、MoOx、PEDOT:PSS、WOx、CuSCN、Cu2More than two materials of O, CuI, Spiro-TTB and self-assembled monolayer SAMs;
the thickness of the first carrier transport layer is in the range of [1nm,100nm ].
In a specific implementation, the first carrier transport layer may be deposited on the top surface of the tunneling layer by one of a PVD process, an RPD process, a thermal evaporation process, a near-space sublimation process, a vapor transport deposition process, and a spray coating process.
Specifically, the perovskite absorption layer is made of more than one blended material, and the chemical general formula of the blended material is ABX3Wherein, A is monovalent cation, including but not limited to one or more cations of potassium (K), cesium (Cs), rubidium (Rb), methylamino or amidino, B is divalent cation: including but not limited to one or more cations of lead (Pb), tin (Sn), X is a monovalent anion: including but not limited to halogens: iodine (I), bromine (Br), chlorine (Cl) and halogen-like compoundsOne or more anions of the group elements. Optionally, the thickness value range of the perovskite light absorption layer is [300nm,5000nm]。
In a specific implementation, the perovskite absorption layer may be prepared on top of the first carrier transport layer by a coating method or an ink-jet printing method.
Specifically, the material of the second carrier transport layer is SnO2、TiO2、ZnO、ZrO2One of fullerene, fullerene derivative, TiSnOx and SnZnOx; or the material of the second carrier transport layer is SnO2、TiO2、ZnO、ZrO2More than two of fullerene, fullerene derivative, TiSnOx and SnZnOx; the thickness of the second carrier transport layer is in the range of [5nm,100nm ]]。
In a specific implementation, the second carrier transport layer may be prepared on the top surface of the perovskite absorption layer by one of a PVD process, an RPD process, a thermal evaporation process, a near-space sublimation process, a vapor transport deposition, a chemical vapor deposition, an atomic layer deposition process.
Specifically, the buffer layer is made of metal oxide; the thickness of the buffer layer is in a range of [0nm,30nm ].
In a specific implementation, the buffer layer may be prepared on the top surface of the second carrier transport layer by one of a PVD process, an RPD process, a thermal evaporation process, a near-space sublimation process, a vapor transport deposition process, a chemical vapor deposition process, and an atomic layer deposition process.
Specifically, the transparent window layer is made of ITO, IZO, AZO, IWO or SnO2One of ZnO, strontium indium oxide and IXO;
or the material of the transparent window layer is ITO, IZO, AZO, IWO or SnO2ZnO, strontium indium oxide and IXO;
the thickness of the transparent window layer is in the range of [50nm,200nm ].
In a specific implementation, a transparent window layer can be prepared on the top surface of the buffer layer by a PVD process or an RPD process.
Specifically, the top electrode is made of one of Ag, Cu, Ni and Al;
or the material of the top electrode is composed of more than two of Ag, Cu, Ni or Al;
the thickness of the top electrode is in the range of 10um and 100um
In a specific implementation, the top electrode may be prepared on the top surface of the transparent window layer through a screen printing process, an electroplating process, a laser transfer process, or a thermal evaporation process.
Fig. 2 is a flowchart of a method for manufacturing a solar tandem cell according to an embodiment of the invention.
Correspondingly, the embodiment of the invention also provides a preparation method of the solar laminated cell, which comprises the following steps:
s101: taking a silicon solar cell with a polycrystalline silicon stacked silicon oxide surface structure as a silicon bottom cell of the stacked cell;
in particular, currently commonly used cells having a polysilicon stacked silicon oxide surface structure include TOPCon solar cells and POLO solar cells.
S102, cleaning the silicon bottom battery;
s103: depositing a tunneling layer on a top surface of the silicon bottom cell;
depositing a tunneling layer on the top surface of the silicon bottom cell by a PVD process or an RPD process;
the tunneling layer is made of ITO, IZO, AZO, IWO and SnO2One of ZnO, strontium indium oxide and IXO; or the tunneling layer is made of the ITO, IZO, AZO, IWO and SnO2ZnO, strontium indium oxide and IXO;
the thickness of the tunneling layer is in a range of [1nm,30nm ].
And S104, manufacturing a perovskite top cell on the top surface of the tunneling layer, wherein the perovskite top cell comprises a first carrier transmission layer, a perovskite absorption layer, a second carrier transmission layer, a buffer layer, a transparent window layer and a top electrode which are sequentially deposited, and obtaining the solar laminated cell.
In an optional embodiment, the perovskite roof cell includes a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a buffer layer, a transparent window layer, and a top electrode deposited in this order, and includes:
depositing a first carrier transport layer on the top surface of the tunneling layer by one of a PVD process, an RPD process, a thermal evaporation process, a near-space sublimation process, a vapor transport deposition process, and a spray process;
the first carrier transmission layer is made of PTAA and NiOx、P3HT、V2O5、MoOx、PEDOT:PSS、WOx、CuSCN、Cu2One of O, CuI, Spiro-TTB and self-assembled monolayer SAMs;
or the material of the first carrier transmission layer is selected from PTAA and NiOx、P3HT、V2O5、MoOx、PEDOT:PSS、WOx、CuSCN、Cu2More than two materials of O, CuI, Spiro-TTB and self-assembled monolayer SAMs;
the thickness of the first carrier transport layer is in the range of [1nm,100nm ].
In an alternative embodiment, the perovskite roof cell includes a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a buffer layer, a transparent window layer, and a top electrode deposited in this order, including:
preparing a perovskite absorption layer on the top surface of the first carrier transport layer by a coating method or an ink-jet printing method;
the perovskite absorption layer is made of more than one blended material, and the chemical general formula of the blended material is ABX3Wherein A is a monovalent cation, B is a divalent cation, and X is a monovalent anion;
the thickness of the perovskite absorption layer is in the range of [300nm,5000nm ].
In an optional embodiment, the perovskite roof cell includes a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a buffer layer, a transparent window layer, and a top electrode deposited in this order, and includes:
preparing a second carrier transport layer on the top surface of the perovskite absorption layer by one of a PVD process, an RPD process, a thermal evaporation process, a near-space sublimation process, a vapor transport deposition, a chemical vapor deposition, an atomic layer deposition process;
the second carrier transport layer is made of SnO2、TiO2、ZnO、ZrO2One of fullerene, fullerene derivative, TiSnOx and SnZnOx; or the material of the second carrier transport layer is SnO2、TiO2、ZnO、ZrO2More than two materials of fullerene, fullerene derivative, TiSnOx and SnZnOx;
the thickness of the second carrier transport layer is in a value range of [5nm,100nm ].
In an optional embodiment, the perovskite roof cell includes a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a buffer layer, a transparent window layer, and a roof electrode deposited in sequence, and the perovskite roof cell includes:
preparing the buffer layer on the top surface of the second carrier transport layer by one of a PVD process, an RPD process, a thermal evaporation process, a near space sublimation process, a vapor transport deposition process, a chemical vapor deposition process, an atomic layer deposition process;
the buffer layer is made of metal oxide;
the thickness of the buffer layer is in a range of [0nm,30nm ].
In an optional embodiment, the perovskite roof cell includes a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a buffer layer, a transparent window layer, and a top electrode deposited in this order, and includes:
preparing a transparent window layer on the top surface of the buffer layer by a PVD process or an RPD process;
the transparent window layer is made of ITO, IZO, AZO, IWO and SnO2One of ZnO, strontium indium oxide and IXO;
or the material of the transparent window layer is ITO、IZO、AZO、IWO、SnO2ZnO, strontium indium oxide and IXO;
the thickness of the transparent window layer is in the range of [50nm,200nm ].
In an optional embodiment, the perovskite roof cell includes a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a buffer layer, a transparent window layer, and a top electrode deposited in this order, and includes:
preparing a top electrode on the top surface of the transparent window layer through a screen printing process or an electroplating process or a laser transfer printing process or a thermal evaporation process;
the top electrode is made of one of Ag, Cu, Ni or Al;
or the material of the top electrode is composed of more than two of Ag, Cu, Ni or Al;
the thickness value range of the top electrode is [10um,100um ].
The invention provides a preparation method of a solar laminated cell and the solar laminated cell, wherein a bottom cell adopts a crystalline silicon bottom cell based on a TOPCon structure or a POLO structure, a tunneling passivation contact poly-Si/SiOx structure is selected as a tunneling layer contact surface, an ultrathin tunneling layer is innovatively adopted and applied to a poly-Si surface, and the tunneling passivation contact of a perovskite top cell and a silicon bottom cell can be well realized by combining a perovskite top cell based on a PIN structure, so that a high-efficiency perovskite-crystalline silicon laminated solar cell is obtained. Compared with a heterojunction solar cell, the crystal silicon bottom cell based on the TOPCon structure or the POLO structure has the advantages of high open-circuit voltage and good thermal stability, is compatible with the existing production line production, and can be used for directly preparing a low-cost semi-finished silicon solar bottom cell from the production line. The ultrathin tunneling layer can reduce light absorption while guaranteeing efficient recombination of current carriers of the bottom cell and the top cell, so that the perovskite crystalline silicon solar cell with high efficiency and low cost is prepared.
In addition, the above detailed description of the method for manufacturing a solar tandem cell and the solar tandem cell provided in the embodiments of the present invention is provided, and a specific example should be used herein to explain the principle and the implementation of the present invention, and the above description of the embodiment is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. A method for manufacturing a solar laminated cell is characterized by comprising the following steps:
taking a silicon solar cell with a polysilicon stacked silicon oxide surface structure as a silicon bottom cell of the stacked cell;
cleaning the silicon bottom battery;
depositing a tunneling layer on a top surface of the silicon bottom cell;
and manufacturing a perovskite top cell on the top surface of the tunneling layer, wherein the perovskite top cell comprises a first carrier transmission layer, a perovskite absorption layer, a second carrier transmission layer, a buffer layer, a transparent window layer and a top electrode which are deposited in sequence, and obtaining the solar laminated cell.
2. The method for manufacturing a solar laminated cell according to claim 1, wherein the silicon bottom cell of the solar laminated cell is a TOPCon solar cell or a POLO solar cell.
3. The method of claim 1, wherein depositing a tunneling layer on the top surface of the silicon bottom cell comprises:
depositing a tunneling layer on the top surface of the silicon bottom cell by a PVD process or an RPD process;
the tunneling layer is made of ITO, IZO, AZO, IWO and SnO2One of ZnO, strontium indium oxide and IXO; or the tunneling layer is made of the ITO, IZO, AZO, IWO and SnO2ZnO, strontium indium oxide and IXO;
the thickness of the tunneling layer is in a range of [1nm,30nm ].
4. The method of fabricating a solar laminate cell of claim 1, wherein the perovskite top cell comprises a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a buffer layer, a transparent window layer, and a top electrode deposited in sequence comprising:
depositing a first carrier transport layer on the top surface of the tunneling layer by one of a PVD process, an RPD process, a thermal evaporation process, a near-space sublimation process, a vapor transport deposition process, and a spray process;
the first carrier transmission layer is made of PTAA and NiOx、P3HT、V2O5、MoOx、PEDOT:PSS、WOx、CuSCN、Cu2One of O, CuI, Spiro-TTB and self-assembled monolayer SAMs;
or the material of the first carrier transmission layer is selected from PTAA and NiOx、P3HT、V2O5、MoOx、PEDOT:PSS、WOx、CuSCN、Cu2More than two materials of O, CuI, Spiro-TTB and self-assembled monolayer SAMs;
the thickness of the first carrier transport layer is in the range of [1nm,100nm ].
5. The method of fabricating a solar laminate cell according to claim 1, wherein the perovskite top cell comprises a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a buffer layer, a transparent window layer and a top electrode deposited in sequence, comprising:
preparing a perovskite absorption layer on the top surface of the first carrier transport layer by a coating method or an ink-jet printing method;
the perovskite absorption layer is made of more than one blended material, and the chemical general formula of the blended material is ABX3Wherein A is a monovalent cation, B is a divalent cation, and X is a monovalent anion;
the thickness of the perovskite absorption layer is in the range of [300nm,5000nm ].
6. The method of fabricating a solar laminate cell of claim 1, wherein the perovskite top cell comprises a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a buffer layer, a transparent window layer, and a top electrode deposited in sequence comprising:
preparing a second carrier transport layer on the top surface of the perovskite absorption layer by one of a PVD process, an RPD process, a thermal evaporation process, a near-space sublimation process, a vapor transport deposition, a chemical vapor deposition, an atomic layer deposition process;
the second carrier transport layer is made of SnO2、TiO2、ZnO、ZrO2One of fullerene, fullerene derivative, TiSnOx and SnZnOx; or the material of the second carrier transport layer is SnO2、TiO2、ZnO、ZrO2More than two of fullerene, fullerene derivative, TiSnOx and SnZnOx;
the thickness of the second carrier transport layer is in a value range of [5nm,100nm ].
7. The method of fabricating a solar laminate cell of claim 1, wherein the perovskite top cell comprises a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a buffer layer, a transparent window layer, and a top electrode deposited in sequence comprising:
preparing the buffer layer on the top surface of the second carrier transport layer by one of a PVD process, an RPD process, a thermal evaporation process, a near space sublimation process, a vapor transport deposition process, a chemical vapor deposition process, an atomic layer deposition process;
the buffer layer is made of metal oxide;
the thickness of the buffer layer is in the range of [0nm,30nm ].
8. The method of fabricating a solar laminate cell of claim 1, wherein the perovskite top cell comprises a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a buffer layer, a transparent window layer, and a top electrode deposited in sequence comprising:
preparing a transparent window layer on the top surface of the buffer layer by a PVD process or an RPD process;
the transparent window layer is made of ITO, IZO, AZO, IWO and SnO2One of ZnO, strontium indium oxide and IXO;
or the material of the transparent window layer is ITO, IZO, AZO, IWO or SnO2ZnO, strontium indium oxide and IXO;
the thickness of the transparent window layer is in the range of [50nm,200nm ].
9. The method of fabricating a solar laminate cell of claim 1, wherein the perovskite top cell comprises a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a buffer layer, a transparent window layer, and a top electrode deposited in sequence comprising:
preparing a top electrode on the top surface of the transparent window layer by a screen printing process, an electroplating process, a laser transfer printing process or a thermal evaporation process;
the top electrode is made of one of Ag, Cu, Ni or Al;
or the top electrode is made of more than two materials of Ag, Cu, Ni or Al;
the thickness value range of the top electrode is [10um,100um ].
10. A solar tandem cell, characterized in that it is prepared based on the solar tandem cell preparation method of any one of claims 1 to 9.
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| CN115148831A (en) * | 2022-07-13 | 2022-10-04 | 苏州大学 | Electron selective transmission material for photovoltaic device and application thereof |
| CN115188838A (en) * | 2022-06-28 | 2022-10-14 | 华中科技大学 | Cadmium selenide/crystalline silicon series integrated solar cell and preparation method thereof |
| CN115425094A (en) * | 2022-08-05 | 2022-12-02 | 深圳黑晶光电技术有限公司 | Perovskite/crystalline silicon laminated solar cell and preparation method thereof |
| CN115799376A (en) * | 2023-02-09 | 2023-03-14 | 材料科学姑苏实验室 | Intermediate interconnection layer structure of laminated photovoltaic cell and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115188838A (en) * | 2022-06-28 | 2022-10-14 | 华中科技大学 | Cadmium selenide/crystalline silicon series integrated solar cell and preparation method thereof |
| CN115148831A (en) * | 2022-07-13 | 2022-10-04 | 苏州大学 | Electron selective transmission material for photovoltaic device and application thereof |
| CN115425094A (en) * | 2022-08-05 | 2022-12-02 | 深圳黑晶光电技术有限公司 | Perovskite/crystalline silicon laminated solar cell and preparation method thereof |
| CN115799376A (en) * | 2023-02-09 | 2023-03-14 | 材料科学姑苏实验室 | Intermediate interconnection layer structure of laminated photovoltaic cell and preparation method and application thereof |
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