CN112164726A - Schottky barrier diode and preparation method thereof - Google Patents
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- CN112164726A CN112164726A CN202010966449.9A CN202010966449A CN112164726A CN 112164726 A CN112164726 A CN 112164726A CN 202010966449 A CN202010966449 A CN 202010966449A CN 112164726 A CN112164726 A CN 112164726A
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- 230000004888 barrier function Effects 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910009819 Ti3C2 Inorganic materials 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 13
- 238000005507 spraying Methods 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 description 18
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
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- 229910021641 deionized water Inorganic materials 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
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- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052731 fluorine Chemical group 0.000 description 1
- 239000011737 fluorine Chemical group 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
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- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000001301 oxygen Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
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- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- 238000001179 sorption measurement Methods 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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Abstract
The invention belongs to the technical field of semiconductors, and discloses a Schottky barrier diode and a preparation method thereof, wherein the Schottky barrier diode comprises the following structures: a substrate layer; the semiconductor layer is arranged on the upper surface of the substrate layer and is a GaN film; an anode and a cathode both disposed on the upper surface of the semiconductor layer, the anode being Ti3C2A two-dimensional material; an anode metal contact layer disposed on an upper surface of the anode; and the cathode metal contact layer is arranged on the upper surface of the cathode. The Schottky barrier diode has the advantage of low cost under the condition of keeping excellent performance, and has wide application prospect.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a Schottky barrier diode and a preparation method thereof.
Background
Schottky Barrier Diodes (SBDs) are basic components in semiconductor circuits and have been widely used in logic, amplification, and the like. Most of the existing Schottky barrier diodes are prepared by using inert noble metals such as gold, platinum, palladium, nickel and the like as Schottky electrode materials, although the performance is better, the noble metal materials are rare and expensive, and the preparation method is complex, so that the preparation cost of the traditional Schottky barrier diode is higher.
Therefore, it is desirable to develop a schottky barrier diode that is inexpensive to manufacture and simple in process.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art described above. Therefore, the Schottky barrier diode and the preparation method thereof provided by the invention have the advantages of low cost and wide application prospect under the condition of keeping excellent performance.
A schottky barrier diode comprising the following structure:
a substrate layer;
the semiconductor layer is arranged on the upper surface of the substrate layer and is a GaN (gallium nitride) film;
an anode and a cathode both disposed on the upper surface of the semiconductor layer, the anode being Ti3C2A two-dimensional material;
an anode metal contact layer disposed on an upper surface of the anode;
and the cathode metal contact layer is arranged on the upper surface of the cathode.
The anode is in Schottky contact with the semiconductor layer, and the cathode is in ohmic contact with the semiconductor layer. The anode metal contact layer is arranged on the outer surface of the anode, and the anode metal contact layer has the function of avoiding the direct contact of the anode and the outside and is also beneficial to leading out the anode. Similarly, the cathode metal contact layer is arranged on the outer surface of the cathode, and can also play a role in protecting the cathode.
Ti3C2The material is a two-dimensional layered structure material, has good metal conductivity and hydrophilicity, and therefore has excellent performance in energy, optics and catalysis applications. Ti3C2After selective chemical etching, the surface of the precursor phase has high chemical activity and can form surface functional groups such as hydroxyl, oxygen or fluorine. These surface functional groups not only affect the hydrophilicity, the electrochemical properties such as ion adsorption and diffusion, but also affect the electronic structure, the conductivity and the work function, and further affect the electronic properties, Ti3C2Has a wider adjustable work function (2-6 eV). Therefore, the present invention provides Ti excellent in electronic characteristics3C2The method is applied to semiconductor electronic devices and shows huge application potential.
Ti3C2The preparation method of (1) is generally: LiF is added to HCl and stirred for 30-60 minutes, then Ti is slowly added3AlC2Stirring for 12-24 hours; centrifuging and cleaning the obtained solution for 10-20 min at 3000-4000rpm, and collecting the centrifuged supernatant, i.e. Ti3C2An aqueous solution.
Preferably, the GaN thin film has a carrier concentration range of 1 × 10 at room temperature15cm-3To 1X 1018cm-3。
Preferably, the thickness of the GaN thin film is 1-4 μm.
Preferably, the GaN thin film is doped with Si. The GaN film is doped with Si, so that the conductivity can be improved.
Preferably, the substrate is selected from sapphire, silicon or silicon carbide.
Preferably, the thickness of the anode is 10-200 nm.
Preferably, the thickness of the cathode is 5-300nm, and the material is Ti.
Preferably, the anode metal contact layer is made of Ti, and the cathode metal contact layer is made of Al.
More preferably, the thickness of the anode metal contact layer and the cathode metal contact layer is 5-300 nm.
The preparation method of the Schottky barrier diode comprises the following steps:
(1) depositing a GaN film on the substrate layer;
(2) cleaning the GaN film prepared in the step (1), etching, cleaning and drying the GaN film to form a semiconductor layer;
(3) photoetching the semiconductor layer to form a cathode window, and forming a cathode and a cathode metal contact layer on the cathode window by adopting a thermal evaporation method; photoetching is carried out on the semiconductor layer to form an anode window, and an anode metal contact layer are formed on the anode window; the preparation method of the anode is a spin coating method or a spraying method.
Preferably, the spin coating method in the step (3) is performed by: taking Ti3C2Dropping the aqueous solution on the GaN film, setting the three spin coating processes of a spin coater to 800rpm 15s, 1000rpm 10s and 1500rpm 5s in sequence, and drying in vacuum to obtain the anode.
Preferably, the operation of the spraying method in the step (3) is as follows: spraying Ti on the GaN film by adopting a spraying instrument3C2And (5) drying the aqueous solution in vacuum to obtain the anode.
Compared with the prior art, the invention has the following beneficial effects:
(1) ti in the Schottky barrier diode3C2The anode can be prepared by a simple and low-cost method such as a spin coating method or a spray coating method without using expensive vacuum equipment, and thus is simpler and more economical.
(2) Compared with expensive heavy metal raw materials, Ti3C2The cost of the material as the Schottky electrode is lower, which is beneficial to large areaAnd (4) volume production.
(3) The Schottky barrier diode adopts a horizontal structure, and has the advantages of simple structure, simple and stable preparation process and good repeatability.
Drawings
Fig. 1 is a schematic view showing the structure of schottky barrier diodes obtained in examples 1 and 2;
fig. 2 is a J-V characteristic curve of the schottky barrier diode manufactured in example 1 in semilogarithmic and linear coordinates.
Detailed Description
In order to make the technical solutions of the present invention more apparent to those skilled in the art, the following examples are given for illustration. It should be noted that the following examples are not intended to limit the scope of the claimed invention.
The starting materials, reagents or apparatuses used in the following examples are conventionally commercially available or can be obtained by conventionally known methods, unless otherwise specified.
Example 1
The present embodiment provides a schottky barrier diode, which includes the structure shown in fig. 1: a substrate layer 100; the semiconductor layer 200 is arranged on the upper surface of the substrate layer 100, and the semiconductor layer 200 is a GaN film; an anode 300 and a cathode 400 both disposed on the upper surface of the semiconductor layer 200, the anode 300 being Ti3C2A two-dimensional material; an anode metal contact layer 500 disposed on an upper surface of the anode 300; and a cathode metal contact layer 600 disposed on the upper surface of the cathode 400.
The specific preparation method of the schottky barrier diode in the embodiment includes the following steps:
(1) depositing a GaN film with a thickness of 3 μm on the sapphire substrate by Metal Organic Chemical Vapor Deposition (MOCVD) to obtain a semiconductor layer, wherein the GaN film has a carrier concentration of about 5 × 10 at room temperature16cm-3；
(2) Cleaning the semiconductor layer: firstly, placing the mixture into an ultrasonic cleaning machine, and sequentially cleaning the mixture by using acetone, ethanol and deionized water to remove organic matters; it was then placed in an HF: h2O is 1: 9, etching in the solution for 2 minutes, and cleaning with deionized water; drying with nitrogen after each step of deionized water cleaning;
(3) photoetching the cleaned semiconductor layer to define a cathode window, and then placing the semiconductor layer in an electron beam evaporation cavity to evaporate metals Ti and Al in sequence to form a cathode and a cathode metal contact layer; removing the photoresist, and then carrying out rapid thermal annealing at 600 ℃ for 15 seconds in a nitrogen environment to reduce ohmic contact resistance; wherein the thickness of the cathode is 20nm, and the thickness of the cathode metal contact layer is 100 nm;
(4) and photoetching the semiconductor layer with the finished cathode, defining an anode window, and placing the anode window on a spin coater. Taking Ti with the concentration of 5mg/mL3C20.1mL of aqueous solution is dripped on the semiconductor layer, three spin coating processes of a spin coater are sequentially set to be 800rpm 15s, 1000rpm 10s and 1500rpm 5s, and an anode with the thickness of 30nm is prepared after vacuum drying; depositing Ti metal on the surface of the anode to form an anode metal contact layer with the thickness of 100 nm; finally, the Schottky barrier diode is manufactured.
FIG. 2 is a J-V characteristic curve of the Schottky barrier diode prepared in the present example under semilogarithmic and linear coordinates, and it can be known from FIG. 2 that the on-off ratio of the Schottky barrier diode exceeds 108And has excellent performance.
Example 2
The present embodiment provides a schottky barrier diode, which includes the structure shown in fig. 1: a substrate layer 100; the semiconductor layer 200 is arranged on the upper surface of the substrate layer 100, and the semiconductor layer 200 is a GaN film; an anode 300 and a cathode 400 both disposed on the upper surface of the semiconductor layer 200, the anode 300 being Ti3C2A two-dimensional material; an anode metal contact layer 500 disposed on an upper surface of the anode 300; and a cathode metal contact layer 600 disposed on the upper surface of the cathode 400.
The specific preparation method of the schottky barrier diode in the embodiment includes the following steps:
(1) depositing a GaN film with a thickness of 2 μm on a sapphire substrate by Metal Organic Chemical Vapor Deposition (MOCVD) to obtain a semiconductor layerIs doped with Si, and the GaN film has a carrier concentration of about 1 × 10 at room temperature18cm-3；
(2) Cleaning the semiconductor layer: firstly, placing the mixture into an ultrasonic cleaning machine, and sequentially cleaning the mixture by using acetone, ethanol and deionized water to remove organic matters; it was then placed in an HF: h2O is 1: 9, etching in the solution for 2 minutes, and cleaning with deionized water; drying with nitrogen after each step of deionized water cleaning;
(3) photoetching the cleaned semiconductor layer to define a cathode window, and then placing the semiconductor layer in an electron beam evaporation cavity to evaporate metals Ti and Al in sequence to form a cathode and a cathode metal contact layer; removing the photoresist, and then carrying out rapid thermal annealing at 600 ℃ for 15 seconds in a nitrogen environment to reduce ohmic contact resistance; wherein the thickness of the cathode is 50nm, and the thickness of the cathode metal contact layer is 150 nm;
(4) and photoetching the semiconductor layer with the finished cathode, defining an anode window, and placing the anode window on a spin coater. Taking Ti with the concentration of 0.25mg/mL3C22mL of aqueous solution is sprayed on the GaN film by a spraying instrument, and an anode with the thickness of 50nm is prepared after vacuum drying; depositing Ti metal on the surface of the anode to form an anode metal contact layer with the thickness of 100 nm; finally, the Schottky barrier diode is manufactured.
Claims (10)
1. A schottky barrier diode comprising the following structure:
a substrate layer;
the semiconductor layer is arranged on the upper surface of the substrate layer and is a GaN film;
an anode and a cathode both disposed on the upper surface of the semiconductor layer, the anode being Ti3C2A two-dimensional material;
an anode metal contact layer disposed on an upper surface of the anode;
and the cathode metal contact layer is arranged on the upper surface of the cathode.
2. The schottky barrier diode of claim 1A tube, wherein the GaN thin film has a carrier concentration range of 1 × 10 at room temperature15cm-3To 1X 1018cm-3。
3. The schottky barrier diode as described in claim 1, wherein the GaN thin film has a thickness of 1-4 μm.
4. The schottky barrier diode as described in claim 1, wherein said GaN thin film is doped with Si.
5. The schottky barrier diode as described in claim 1, wherein the anode has a thickness of 10-200 nm.
6. The schottky barrier diode as described in claim 1, wherein the cathode has a thickness of 5 to 300nm and is made of Ti.
7. The schottky barrier diode as described in claim 1, wherein the anode metal contact layer is made of Ti, and the cathode metal contact layer is made of Al.
8. The method of manufacturing a schottky barrier diode as described in any one of claims 1 to 7, comprising the steps of:
(1) depositing a GaN film on the substrate layer;
(2) cleaning the GaN film prepared in the step (1), etching, cleaning and drying the GaN film to form a semiconductor layer;
(3) photoetching is carried out on the semiconductor layer to form a cathode window, and electron beam evaporation is carried out to form a cathode and a cathode metal contact layer on the cathode window; photoetching is carried out on the semiconductor layer to form an anode window, and an anode metal contact layer are formed on the anode window; the preparation method of the anode is a spin coating method or a spraying method.
9. The method of claim 8The preparation method of (2) is characterized in that the spin coating method in the step (3) is operated as follows: taking Ti3C2Dropping the aqueous solution on the GaN film, setting the three spin coating processes of a spin coater to 800rpm 15s, 1000rpm 10s and 1500rpm 5s in sequence, and drying in vacuum to obtain the anode.
10. The production method according to claim 8, wherein the spraying method in the step (3) is performed by: spraying Ti on the GaN film by adopting a spraying instrument3C2And (5) drying the aqueous solution in vacuum to obtain the anode.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113161442A (en) * | 2021-04-22 | 2021-07-23 | 合肥工业大学 | Silicon schottky junction line array near infrared photoelectric detector |
| CN114005895A (en) * | 2021-10-26 | 2022-02-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Photoelectric detector and manufacturing method thereof |
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