CN115763230A - P-type gallium oxide film and preparation method and application thereof - Google Patents
P-type gallium oxide film and preparation method and application thereof Download PDFInfo
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Abstract
The invention discloses a P-type gallium oxide film, a preparation method and application thereof, in N 2 Oxidizing the non-doped gallium nitride substrate at 700-1000 ℃ in an O atmosphere to obtain the Hall hole with the doping concentration of more than 2.2 multiplied by 10 16 cm ‑3 P-type nitrogen doped P-type gallium oxide thin film of (1) using N 2 O "N-O" single bond ratio O 2 The characteristic of lower double bond energy of 'O = O' is that N 2 O can be decomposed into N atoms and O atoms at a lower temperature, the decomposed O atoms play a displacement role, and the N atoms play a doping role; the N atoms in the GaN are free from the constraint of a covalent bond Ga-N, wherein one part of the N atoms escape, and the other part of the N atoms also play a doping role; n in GaNAfter the atom is freed from the covalent bond, it is replaced by N 2 O atoms decomposed from O enter and are substituted, and polycrystalline Ga is formed from GaN 2 O 3 Film from N 2 N doping is performed simultaneously with N atoms decomposed from O and GaN to improve Ga formation 2 O 3 Hall hole doping concentration of the film such that Ga generated by oxidation 2 O 3 The film obtains better P-type electrical property.
Description
Technical Field
The invention belongs to the technical field of photodiodes, and particularly relates to a P-type gallium oxide film and a preparation method and application thereof.
Background
Gallium oxide (Ga) 2 O 3 ) Is a super-wide bandgap semiconductor material (the bandgap width is 4.9 eV) which is currently attracting attention. Especially, the beta-Ga 2O3 has outstanding application prospect in the fields of ultraviolet light detectors, photocatalysts, gas sensors, solar cells, fluorescent powder, new-generation high-voltage high-power devices and the like due to the advantage of high stability under normal temperature and pressure. There are a number of manufacturing techniques available to grow high quality gallium oxide films, such as: metal Organic Chemical Vapor Deposition (MOCVD), molecular Beam Epitaxy (MBE), halide Vapor Phase Epitaxy (HVPE), and the like. Pulsed Laser Deposition (PLD) and Plasma Enhanced Atomic Layer Deposition (PEALD) are somewhat less costly than MOCVD and MBE and are currently used mainly for growing N-doped β -Ga2O3 thin films or gallium oxide insulator thin films. There are several more cost-effective methods for preparing β -Ga2O3 thin films: radio frequency magnetron sputtering method, electron beam evaporation method, spray pyrolysis method, and sol-gel method. In addition, high temperature thermal oxidation may also oxidize the GaN or GaAs substrate into a gallium oxide thin film or nanowire.
Currently, by doping gallium oxide with silicon (Si), germanium (Ge), tin (Sn), magnesium (Mg), or iron (Fe), N-type doped gallium oxide films can be prepared, with hall doping concentrations up to 10 at room temperature 16 To 10 19 cm -3 The highest N-type room-temperature Hall electron doping concentration can reach 10 20 cm -3 Orders of magnitude. However, the formation of P-type doped gallium oxide thin films is still under constant research and experiment. The research team of the university of Compound Dan proposes the adoption of oxygen (O) 2 ) And thermally oxidizing GaN under high pressure in the atmosphere to generate the N-doped P-type gallium oxide film. With oxygen (O) 2 ) The oxidation method, the room temperature Hall doping concentration of the formed N-doped P-type gallium oxide film is only 1.6 multiplied by 10 at the oxidation temperature of between 1000 and 1100 DEG C 16 cm -3 It still cannot meet the requirement of higher hall doping concentration.
Disclosure of Invention
The invention aims to provide a P-type gallium oxide film and a preparation method and application thereof, so as to overcome the defects of the prior art.
A preparation method of a P-type gallium oxide film comprises the following steps: in N 2 And oxidizing the non-doped gallium nitride substrate at 700-1000 ℃ for 1-12 hours in an O atmosphere to obtain the nitrogen-doped P-type gallium oxide film.
Preferably, the method oxidizes non-doped (0001) plane GaN wafers prepared by an MOCVD method on a sapphire substrate, the thickness of the GaN layer is 4 microns, the GaN layer is N-type, and the room-temperature Hall electron doping concentration is 8.87 multiplied by 10 16 cm -3 。
Preferably, before the oxidation is started, the non-doped gallium nitride is sequentially cleaned by using acetone, ethanol and deionized water through ultrasonic waves, and impurities and oxides on the surface of the non-doped gallium nitride are removed.
Preferably, the temperature of the non-doped gallium nitride after ultrasonic cleaning is raised from room temperature to 700 ℃, 750 ℃, 800 ℃, 850 ℃, 900 ℃, 950 ℃, 1000 ℃, and the raising rate is 6.5 ℃ per minute -1 。
Preferably, the oxidation high temperature holding time is set to 12 hours at the oxidation temperature of 700 ℃, 750 ℃, 800 ℃ and 850 ℃.
Preferably, the oxidation high-temperature retention time is set to 6 hours at the oxidation temperatures of 900 ℃ and 950 ℃.
Preferably, the oxidation high-temperature retention time is set to 1 hour at a high oxidation temperature of 1000 ℃.
A P-type gallium oxide film prepared by the method.
A method for preparing a photodiode comprises the following steps:
s1, preparing Ga of the P-type gallium oxide film prepared by the method 2 O 3 The layer part is etched longitudinally, so that the N-type GaN below the etched part is exposed;
s2, further corroding and flattening the surface of the exposed GaN on the P-type gallium oxide film;
s3, preparing a metal electrode on the exposed GaN surface by using Ti/Al/Ni/Au alloy: photoetching the wafer into a strip-shaped electrode by using a customized mask; performing rapid thermal annealing on the metal electrode by using a rapid thermal annealing furnace, setting the high temperature to be 850 ℃ and the holding time to be 20-120 s to form good ohmic contact;
preparing a metal electrode on the surface of the P-type gallium oxide film by using Mg/Au alloy, and photoetching the metal electrode into a single interdigital electrode by using a customized mask to increase the area for receiving ultraviolet illumination and reduce the resistance; then utilizing a rapid thermal annealing furnace, setting the high temperature to be 300 ℃, keeping the temperature for 60-120 s, and performing rapid thermal annealing on the metal electrode to form good ohmic contact; thereby obtaining a photodiode.
Preferably, the Ga of the P-type gallium oxide film is etched by a wet method 2 O 3 Partially and longitudinally etching the layer part; and further corroding and flattening the exposed GaN surface after the P-type gallium oxide is corroded by adopting dry etching.
Compared with the prior art, the invention has the following beneficial technical effects:
the invention relates to a method for preparing a P-type gallium oxide film, in which N is 2 Oxidizing the undoped gallium nitride substrate for 1h-12h at 700-1000 ℃ under the atmosphere of O to obtain the Hall hole doping concentration of more than 2.2 multiplied by 10 16 cm -3 P-type nitrogen-doped P-type gallium oxide thin film of (1) in N 2 Carrying out high-temperature thermal oxidation on GaN in O atmosphere by using N 2 O "N-O" single bond ratio O 2 The characteristic of lower double bond energy of 'O = O' is that N 2 O can be decomposed into N atoms and O atoms at a lower temperature of 700-1000 ℃, the decomposed O atoms and N atoms enter the GaN, the O atoms play a role in displacement, and the N atoms play a role in doping; meanwhile, at the temperature of 700-1000 ℃, N atoms in the GaN get rid of the constraint of covalent bonds 'Ga-N', and gradually move to the surface of the film, wherein one part of the N atoms escapes, and the other part of the N atoms also plays a role in doping; the N atom in GaN is free from the covalent bond position and is replaced by N 2 O atoms decomposed from O enter and are substituted, and polycrystalline Ga is formed from GaN 2 O 3 Film from N 2 N doping is performed simultaneously with N atoms decomposed from O and GaN to improve Ga formation 2 O 3 Hall hole doping concentration of the film such that Ga generated by oxidation 2 O 3 The film obtains better P-type electrical property.
Preferably, N is used 2 O effectively oxidizes GaN at a lower temperature to generate P-type Ga with compact interior and smooth surface 2 O 3 The thin film is more suitable for being used as a body region of an electronic device and an optoelectronic device.
In the thermal oxidation process, only the upper part of the N-type GaN in the longitudinal direction is oxidized to Ga by controlling the oxidation time 2 O 3 The lower half part of the structure is still GaN, so that a longitudinal P-N junction structure is formed; firstly, wet etching is adopted to longitudinally etch a part of the whole top area of the P-type gallium oxide on the top surface, so that the N-type GaN below the etched part is exposed to form a step-shaped structure; further corroding and flattening the exposed GaN surface of the area by adopting dry etching; then, metal electrodes are respectively prepared on the reserved P-type gallium oxide and N-type GaN surfaces (namely, the upper surface and the lower surface of the step) to form good ohmic contact. Thus, a vertical PN junction photodiode of "P-type gallium oxide"/"N-type gallium nitride" is formed.
Drawings
FIG. 1 is a normalized X-ray diffraction (XRD) spectrum of a P-type gallium oxide film obtained at different oxidation temperatures and times in the examples of the present invention.
FIG. 2 is a top surface topography of a P-type gallium oxide film obtained at different oxidation temperatures and times in an embodiment of the present invention.
FIG. 3 is an FIB diagram of a P-type gallium oxide film obtained at different oxidation temperatures and times in an embodiment of the present invention.
Fig. 4 is a schematic diagram of a P-type gallium oxide thin film vacuum temperature-changing hall test result obtained at different oxidation temperatures and times in the embodiment of the present invention.
FIG. 5 shows an embodiment of the present invention N 2 Cross-sectional schematic view of the coupon after high temperature oxidation.
FIG. 6 is a flowchart illustrating the steps of a vertical P-N junction photodiode fabrication process according to an embodiment of the present invention.
FIG. 7 is a schematic diagram of a vertical P-N junction based photodiode in an embodiment of the present invention.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or described herein. Moreover, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The invention discloses a preparation method of a P-type gallium oxide film, which comprises the following steps: at N 2 And oxidizing the non-doped gallium nitride substrate for 1 to 12 hours at the temperature of 700 to 1000 ℃ in the atmosphere of O to obtain the nitrogen-doped P-type gallium oxide film. The obtained P-type gallium oxide film has a hole doping concentration greater than 2.2 × 10 16 cm -3 。
Specifically, the GaN wafer on the sapphire substrate is adopted, the non-doped (0001) plane GaN wafer of the non-doped gallium nitride substrate is prepared by an MOCVD method, the thickness of the GaN wafer layer is 4 microns, the GaN wafer layer is N-type, and the room-temperature Hall electron doping concentration is 8.87 multiplied by 10 16 cm -3 。
Before oxidation, firstly, the non-doped gallium nitride (GaN wafer) is subjected to ultrasonic cleaning by sequentially adopting acetone, ethanol and deionized water, and impurities and oxides on the surface of the non-doped gallium nitride are removed.
Specifically, the cleaning is carried out for at least 10 minutes by ultrasonic cleaning with acetone, at least 10 minutes by ultrasonic cleaning with ethanol, and at least 10 minutes by ultrasonic cleaning with deionized water to remove surface impurities and oxides.
The cleaned non-doped gallium nitride is horizontally put into a high-temperature oxidation furnace for heating, and the highest oxidation keeping temperature is respectively set to 700 ℃, 750 ℃, 800 ℃, 850 ℃, 900 ℃, 950 ℃ and 1000 ℃.
The temperature rising rate from room temperature to the maximum temperature is 6.5 ℃ min -1 . The whole processes of temperature rise, high-temperature maintenance and temperature reduction are all N 2 Carried out under an atmosphere of O, N 2 The flow rate of O is 150-240cc min -1 。
In this example, the holding time at the high oxidation temperature of 700 ℃, 750 ℃, 800 ℃ and 850 ℃ was set to 12 hours. The high oxidation temperature is set to 900 ℃ and 950 ℃, and the high oxidation temperature holding time is set to 6 hours; the oxidation high temperature holding time was set to 1 hour for the high oxidation temperature of 1000 ℃.
The invention is not dopedOn a gallium nitride substrate, using N 2 And O is oxidized at high temperature, and the longitudinal part of the undoped (N-type) GaN is oxidized into a nitrogen-doped P-type gallium oxide film by controlling the oxidation temperature and time, so that a longitudinal PN junction of 'P-type gallium oxide'/'N-type gallium nitride' is formed in the longitudinal direction. And then, by combining photoetching, etching and electrode preparation processes, the longitudinal PN junction is prepared into a longitudinal ultraviolet photodiode.
As shown in FIG. 5, in the thermal oxidation process, only the upper portion of N-type GaN is oxidized to Ga in the longitudinal direction by properly controlling the oxidation time 2 O 3 The lower half part of the structure is still GaN, so that a longitudinal P-N junction structure is formed.
As shown in fig. 6, the preparation of the photodiode based on the P-type gallium oxide film specifically includes the following steps:
firstly, etching a part of the whole top area of the P-type gallium oxide on the top surface of the obtained P-type gallium oxide film longitudinally by adopting wet etching, so that the N-type GaN below the etched part is exposed to form a step-like structure; further etching the exposed GaN surface of the area to be flat by adopting dry etching; then respectively preparing metal electrodes on the reserved P-type gallium oxide and N-type GaN surfaces (namely the upper surface and the lower surface of the step) to form good ohmic contact; thus, a vertical PN junction photodiode of "P-type gallium oxide"/"N-type gallium nitride" was formed, and the result is shown in fig. 7.
The invention is in N 2 Carrying out high-temperature thermal oxidation on GaN in O atmosphere by using N 2 O "N-O" single bond ratio O 2 The lower bond energy of the "O = O" double bond, so that N 2 O can be decomposed into N atoms and O atoms at a lower temperature of 700-1000 ℃, and the decomposed O atoms and N atoms enter the GaN to play different roles; meanwhile, at the temperature of 700-1000 ℃, N atoms in the GaN get rid of the constraint of covalent bonds 'Ga-N', gradually move to the surface of the film and are ready to escape; the N atom in GaN is removed from the covalent bond 2 The O atoms decomposed from O enter and are substituted by the oxygen atoms to form Ga from GaN 2 O 3 。
In addition to generatingGa produced by substituting O atoms for N atoms, while N atom pairs from two sources 2 O 3 Doping is carried out, and the two source N atoms are respectively: (1) From decomposed N atoms in GaN, ga produced is treated from bottom to top 2 O 3 N doping the film; (2) From an oxidizing atmosphere N 2 The N atom decomposed from O is directed to Ga from top to bottom 2 O 3 And N doping the film.
In the present invention, ga is produced by substituting N atom with O atom 2 O 3 Ga with two source N atoms 2 O 3 Under the action of the two factors, the undoped (intrinsic N-type) GaN can be oxidized to generate the Hall hole with the doping concentration of more than 2.2 multiplied by 10 at the temperature of 700 ℃ to 1000 DEG C 16 cm -3 Of P type Ga 2 O 3 A film; the invention can be more effectively oxidized to generate N-doped P-type Ga at lower temperature 2 O 3 And the Hall hole doping concentration is higher than that of the existing Hall hole doping concentration.
Ga formed at lower oxidation temperature 2 O 3 The film has less defects and voids formed by oxidation, and Ga 2 O 3 The film is relatively compact, and the Ga generated at the oxidation temperature of over 1000 DEG C 2 O 3 The film has more defects and holes formed by high-temperature oxidation, and Ga 2 O 3 The film is relatively loose and has poor compactness. Since the film resistivity due to defects and voids is large and the mobility is lowered, ga generated at an oxidation temperature of over 1000 ℃ is generated 2 O 3 Thin films are not suitable nor advantageous as body regions for electronic and optoelectronic devices. Ga formed at lower oxidation temperature 2 O 3 The film had a relatively good flatness on the top. And Ga formed at an oxidation temperature of more than 1000 DEG C 2 O 3 The random arrangement of the nano-pillar structures on the top of the thin film, which is further formed by oxidation, is higher and more remarkable, so that the surface of the thin film becomes more uneven due to the protrusion of the nano-pillars. The invention utilizes N 2 O effectively oxidizes GaN at a lower temperature to generate a GaN film with a denser interior,P-type Ga with relatively flat surface 2 O 3 The film is more suitable for being used as a body region of an electronic device and an optoelectronic device.
Specifically, the method comprises the following steps:
wet etching: top layer Ga of P-type gallium oxide film 2 O 3 Part of the layer was etched away, this example etched away 1/3 of the top area, leaving Ga 2/3 of the top area 2 O 3 Layer, to be etched off Ga 2 O 3 The GaN layer under the layer is exposed to form "Ga 2 O 3 To a high-low two-stage step structure of GaN';
dry etching: further corroding and flattening the surface of the exposed GaN layer;
ga oxidized on the top surface of the P-type gallium oxide film after dry etching respectively 2 O 3 The top surface and the unoxidized GaN top surface are respectively used for preparing two metal electrodes of the P-N junction photodiode.
In the embodiment of the invention, firstly, a metal electrode is prepared on the top surface of GaN by using Ti/Al/Ni/Au alloy. And photoetching the electrode into a strip-shaped electrode by using a customized mask. And (3) performing rapid thermal annealing on the metal electrode by using a rapid thermal annealing furnace, setting the high temperature to be 850 ℃ and the holding time to be 20-120 s so as to form good ohmic contact. Then Ga is added 2 O 3 The top surface of the metal electrode is prepared from Mg/Au alloy, and the metal electrode is photoetched into a single interdigital electrode by using a customized mask so as to increase the area for receiving ultraviolet illumination and reduce the resistance. And then, a rapid thermal annealing furnace is utilized, the high temperature is set to be 300 ℃, the holding time is 60-120 s, and the metal electrode is subjected to rapid thermal annealing to form good ohmic contact.
As shown in FIG. 1, at N 2 In an atmosphere of O, the GaN substrate was oxidized under conditions of 700 ℃ (12 hours for holding), 800 ℃ (12 hours for holding), 900 ℃ (6 hours for holding), and 1000 ℃ (1 hour for holding) to obtain a nitrogen-doped P-type gallium oxide thin film, and a normalized X-ray diffraction (XRD) pattern was performed. As can be seen from fig. 1: n is a radical of 2 O oxidizing GaN to produce a gallium oxide film of polycrystalline beta-Ga 2 O 3 The films, (-201), (002) and (-112) are three preferred crystal planes.
As shown in FIG. 2, at N 2 In an atmosphere of O, the GaN substrate was oxidized under the conditions of 700 ℃ (12 hours), 800 ℃ (12 hours), 900 ℃ (6 hours) and 1000 ℃ (1 hour) to obtain a nitrogen-doped P-type gallium oxide film, and the top surface topography of the P-type gallium oxide film sample piece was compared with the top surface topography of the GaN after oxidation (SEM) at 1100 ℃ (1 hour). The surface topography of the comparative film shows that: when the oxidation temperature is in the range of 700 ℃ to 900 ℃, the surface roughness increases with the increase of the oxidation temperature, but the flatness is still good. When the oxidation temperature is 1000 ℃, the surface initially forms a 'rhizome' shape of the nano-pillar, so that the surface roughness is further increased. When the oxidation temperature exceeds 1000 ℃ and reaches 1100 ℃, ga 2 O 3 Thin film top surface nanopillar structures have become particularly pronounced. Namely: when the oxidation temperature is higher than 1000 ℃, the unevenness caused by the surface nano-pillars is not beneficial to directly preparing the body region of the semiconductor device.
As shown in FIG. 3, at N 2 In an atmosphere of O, the GaN substrate was oxidized under the conditions of 700 ℃ (12 hours), 800 ℃ (12 hours), 900 ℃ (6 hours) and 1000 ℃ (1 hour) to obtain a nitrogen-doped P-type gallium oxide film, which was compared with a FIB (FIB) image obtained by oxidizing GaN at 1100 ℃ (1 hour). The cross-sectional morphology of the film is compared to see that: ga at an oxidation temperature of over 1000 ℃ to 1100 ℃ 2 O 3 Large cavities are formed in the film, and the large cavities can cause the increase of defects and dangling bonds in the film, reduce the mobility and increase the resistivity, so that the preparation of a body region of a semiconductor device is not facilitated.
As shown in FIG. 4, at N 2 In an atmosphere of O, gaN was oxidized under the conditions of 700 ℃ (12 hours for holding), 800 ℃ (12 hours for holding), 900 ℃ (6 hours for holding), and 1000 ℃ (1 hour for holding), and then the samples were subjected to the vacuum temperature-variable hall test.
The invention utilizes N 2 Replacing O with O 2 In N at 2 Thermally oxidizing GaN in O atmosphere using N 2 O "N-O" single bond ratioThe double bond energy of O2O = O is lower, so that N is 2 O can be decomposed into N atoms and O atoms at a lower temperature of 700-1000 ℃, and the decomposed O atoms and N atoms enter the GaN to play different roles. Meanwhile, at the temperature of 700-1000 ℃, N atoms in the GaN get rid of the constraint of covalent bonds 'Ga-N', gradually move to the surface of the film and are ready to escape; the N atom in GaN is removed from the covalent bond 2 The O atoms decomposed from O enter and are substituted by the oxygen atoms to form Ga from GaN 2 O 3 (ii) a In addition to the O atoms replacing the N atoms, at the same time, the generated Ga2O3 is doped with N atoms from two sources, which are: (a) From decomposed N atoms in GaN, ga produced is treated from bottom to top 2 O 3 N doping the film; from an oxidizing atmosphere N 2 The N atom decomposed from O is directed to Ga from top to bottom 2 O 3 And N doping the film. By substituting N atom by O atom to form Ga 2 O 3 Ga with two source N atoms 2 O 3 Under the combined action of the two factors, the undoped (intrinsic N-type) GaN can be oxidized to generate the Hall hole with the doping concentration of more than 2.2 multiplied by 10 at the lower temperature of 700 ℃ to 1000 DEG C 16 cm -3 Of P type Ga 2 O 3 A film. The invention can be more effectively oxidized to generate N-doped P-type Ga at lower temperature (700-1000℃) 2 O 3 And the doping concentration of the Hall holes of the film is higher than that of the existing gallium oxide film.
Claims (10)
1. A preparation method of a P-type gallium oxide film is characterized by comprising the following steps: at N 2 Oxidizing the non-doped gallium nitride substrate for 1 to 12 hours at the temperature of 700 to 1000 ℃ under the atmosphere of O to obtain the nitrogen-doped P-type gallium oxide film.
2. The method for preparing a P-type gallium oxide film according to claim 1, wherein a GaN wafer with a non-doped surface of a non-doped gallium nitride substrate is prepared by MOCVD, and the thickness of the GaN wafer is 4 μm.
3. The method for preparing the P-type gallium oxide film according to claim 1, wherein before the oxidation, the undoped gallium nitride is subjected to ultrasonic cleaning by sequentially adopting acetone, ethanol and deionized water to remove impurities and oxides on the surface of the undoped gallium nitride.
4. The method of claim 3, wherein the temperature of the ultrasonically cleaned undoped GaN film is raised from room temperature to 700-1000 ℃ at a rate of 6.5 ℃/min -1 。
5. The method for producing a P-type gallium oxide thin film according to claim 1, wherein the holding time at the high oxidation temperature of 700 ℃, 750 ℃, 800 ℃ and 850 ℃ is set to 12 hours.
6. The method for preparing a P-type gallium oxide thin film according to claim 1, wherein the high oxidation temperature is 900 ℃ and 950 ℃, and the high oxidation temperature holding time is set to 6 hours.
7. The method for preparing a P-type gallium oxide thin film according to claim 1, wherein the high oxidation temperature is 1000 ℃ and the high oxidation temperature holding time is set to 1 hour.
8. A P-type gallium oxide thin film prepared according to the method of claim 1.
9. A preparation method in a photodiode is characterized by comprising the following steps:
s1, longitudinally etching the top surface part of the P-type gallium oxide film prepared by the method in claim 1 to expose the N-type GaN below the etched part;
s2, further corroding and flattening the surface of the exposed N-type GaN on the P-type gallium oxide film;
and S3, respectively preparing metal electrodes on the reserved P-type gallium oxide surface and the N-type GaN surface after the surface is corroded and leveled, and thus obtaining the photodiode.
10. The method of claim 9, wherein the metal electrode is made of an alloy of Ti/Al/Ni/Au on the exposed GaN surface after etching: photoetching the mask plate into a strip-shaped electrode by using a customized mask plate to form good ohmic contact;
and preparing a metal electrode on the surface of the P-type gallium oxide film by using Mg/Au alloy, and photoetching the metal electrode into a single interdigital electrode by using a customized mask to form good ohmic contact so as to obtain the P-type gallium oxide/N-type gallium nitride longitudinal PN junction photodiode.
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|---|---|---|---|---|
| CN116581151A (en) * | 2023-07-13 | 2023-08-11 | 湖北九峰山实验室 | Low-turn-on voltage gallium oxide Schottky diode and preparation method thereof |
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| CN116581151A (en) * | 2023-07-13 | 2023-08-11 | 湖北九峰山实验室 | Low-turn-on voltage gallium oxide Schottky diode and preparation method thereof |
| CN116581151B (en) * | 2023-07-13 | 2023-10-17 | 湖北九峰山实验室 | Low-turn-on voltage gallium oxide Schottky diode and preparation method thereof |
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