CN112153796B - 时变等离子体电子密度抖动频率的测量方法 - Google Patents
时变等离子体电子密度抖动频率的测量方法 Download PDFInfo
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CN113128050B (zh) * | 2021-04-21 | 2023-04-25 | 西安电子科技大学 | 基于波阻抗不变点的等离子体电子密度和碰撞频率联合诊断方法 |
CN114242555A (zh) * | 2021-12-21 | 2022-03-25 | 武汉理工大学 | 一种基于调频波驱动的容性耦合等离子体源 |
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CN107992684B (zh) * | 2017-12-05 | 2021-01-19 | 上海无线电设备研究所 | 一种时变等离子体等效分层介质模型建模方法 |
CN108459308B (zh) * | 2018-03-29 | 2021-03-02 | 北京环境特性研究所 | 一种基于时变rcs数据的回波模拟方法及装置 |
CN110198590B (zh) * | 2019-06-26 | 2022-05-10 | 中国人民解放军陆军装甲兵学院 | 磁控等离子体鞘层特性研究方法 |
CN110531346B (zh) * | 2019-07-11 | 2023-06-30 | 西安电子科技大学 | 时变等离子鞘套下畸变雷达信号建模方法 |
CN111200896B (zh) * | 2020-01-14 | 2020-11-24 | 西安电子科技大学 | 基于宽带反射系数曲线曲率分析的等离子体参数诊断方法 |
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Inventor after: Shen Fangfang Inventor after: Xie Yaocong Inventor after: Bai Bowen Inventor after: Li Xiaoping Inventor after: Chen Xuyang Inventor after: Liu Yanming Inventor before: Xie Yaocong Inventor before: Shen Fangfang Inventor before: Bai Bowen Inventor before: Li Xiaoping Inventor before: Chen Xuyang Inventor before: Liu Yanming |
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