CN112151637A - 一种在表面制绒的异质结电池上制备钙钛矿薄膜的方法 - Google Patents

一种在表面制绒的异质结电池上制备钙钛矿薄膜的方法 Download PDF

Info

Publication number
CN112151637A
CN112151637A CN202011002388.0A CN202011002388A CN112151637A CN 112151637 A CN112151637 A CN 112151637A CN 202011002388 A CN202011002388 A CN 202011002388A CN 112151637 A CN112151637 A CN 112151637A
Authority
CN
China
Prior art keywords
textured
thin film
heterojunction
perovskite thin
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202011002388.0A
Other languages
English (en)
Other versions
CN112151637B (zh
Inventor
沈文忠
王杨润乾
王鑫
刘洪�
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Jiaotong University
Original Assignee
Shanghai Jiaotong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Jiaotong University filed Critical Shanghai Jiaotong University
Priority to CN202011002388.0A priority Critical patent/CN112151637B/zh
Publication of CN112151637A publication Critical patent/CN112151637A/zh
Application granted granted Critical
Publication of CN112151637B publication Critical patent/CN112151637B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • H01L31/02363Special surface textures of the semiconductor body itself, e.g. textured active layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明公开了一种在表面制绒的非晶硅/晶硅异质结电池上快速低成本制备钙钛矿薄膜的方法,涉及钙钛矿太阳电池领域,所述方法为先表面制绒的异质结电池清洗;然后在清洗干净的所述表面制绒的异质结电池表面采用电化学方法制备金属铅层;最后采用电化学方法将表面制绒的异质结电池上含有的所述金属铅层转化为所述钙钛矿薄膜。通过本发明的实施,可以快速低成本地在表面制绒的异质结电池上制备均匀的钙钛矿薄膜。

Description

一种在表面制绒的异质结电池上制备钙钛矿薄膜的方法
技术领域
本发明涉及钙钛矿太阳电池领域,尤其涉及在表面制绒的异质结电池上制备钙钛矿薄膜的方法。
背景技术
晶硅太阳电池在光伏市场中占据90%以上的市场份额,但由于受到单结电池效率极限的限制进一步提升异常困难。而钙钛矿材料由于具有很高的吸收系数、陡峭的吸收边以及可调带隙等优点,成为最有希望产业化的电池之一。结合两者光谱互补优势的钙钛矿/晶硅两端叠层太阳电池逐渐成为研究热点,很有可能成为突破晶硅电池效率极限的新一代太阳电池。而这其中的重点就在于如何实现在表面制绒的非晶硅/晶硅异质结电池上快速低成本制备钙钛矿薄膜。传统的工艺主要包括旋涂法,但无法实现钙钛矿薄膜在表面制绒的异质结电池上均匀连续的覆盖;双源共蒸法,但需要高真空高温的环境,成本较高,且速率较慢。
因此,本领域的技术人员致力于开发一种通过低成本制造工艺,为高效的钙钛矿/晶硅两端叠层太阳电池可控地快速地制备大规模、高质量的钙钛矿薄膜。
发明内容
有鉴于现有技术的上述缺陷,本发明所要解决的技术问题是如何在表面制绒的非晶硅/晶硅异质结电池上快速低成本制备钙钛矿薄膜。
为实现上述目的,本发明提供了一种在表面制绒的异质结电池上制备钙钛矿薄膜的方法,所述方法包括以下步骤:
步骤1、将所述表面制绒的异质结电池清洗干净;
步骤2、在所述清洗干净的表面制绒的异质结电池表面采用电化学法制备金属铅层;
步骤3、采用电化学法将所述金属铅层转化为钙钛矿薄膜。
进一步地,所述步骤1还包括:
步骤1.1、首先将所述表面制绒的异质结电池放置于超声清洗机中清洗;
步骤1.2、然后将所述表面制绒的异质结电池置于紫外线下照射以去除有机污染,提高亲水性。
进一步地,步骤1.1所述清洗为依次用去离子水、丙酮、异丙醇、乙醇各清洗15分钟。
进一步地,所述步骤2还包括:
步骤2.1、将每37.5克的碘化钠和每15ml亚甲基乙二醇叔丁基醚溶解于150ml异丙醇中,搅拌然后过滤取150ml澄清溶液;
步骤2.2、将每1.383克的碘化铅加入150ml所述澄清溶液中搅拌至澄清;
步骤2.3、在电化学工作站中用恒电流法在所述表面制绒的异质结电池上沉积所述金属铅层;
步骤2.4、将制得的带有所述金属铅层的所述表面制绒的异质结电池取出后冲洗并烘干。
进一步地,步骤2.1所述搅拌温度为45℃,搅拌时间为3小时。
进一步地,步骤2.3所述所述恒电流法使用的电流为-5mA(相对开路),通电时间为400秒。
进一步地,步骤2.4所述冲洗为用异丙醇冲洗。
进一步地,所述步骤3还包括:
步骤3.1、按每1克甲基碘化铵对应100ml异丙醇配比,并在室温下搅拌至澄清,制备所述甲基碘化铵/异丙醇溶液;
步骤3.2、在电化学工作站中用方波电流法将表面制绒的异质结电池上含有的所述金属铅层转化为所述钙钛矿薄膜。
进一步地,所述步骤3.2中所述方波电流法使用的电流为-5mA(相对开路)持续100毫秒,切换至+5mA(相对开路)持续100毫秒,如此为一个周期。
进一步地,所述方波电流法共循环2000个周期即400秒。
本发明的技术效果如下:
1)相比于旋涂法,本发明采用电化学方法可以实现钙钛矿薄膜在表面制绒的异质结电池上均匀连续的覆盖;
2)相比于双源共蒸法,本发明无需高真空和高温条件。
以下将结合附图对本发明的构思、具体结构及产生的技术效果作进一步说明,以充分地了解本发明的目的、特征和效果。
附图说明
图1是本发明的一个较佳实施例的流程图;
图2是本发明的一个较佳实施例的X射线衍射(XRD)图谱;
图3是本发明的一个较佳实施例的扫描电子显微镜(SEM)图片;
图4是本发明的一个较佳实施例的钙钛矿/晶硅叠层太阳电池结构示意图;
图5是本发明的一个较佳实施例的模拟外量子效率(EQE)谱线;
图6是本发明的一个较佳实施例的模拟电流密度-电压(J-V)谱线。
具体实施方式
以下参考说明书附图介绍本发明的多个优选实施例,使其技术内容更加清楚和便于理解。本发明可以通过许多不同形式的实施例来得以体现,本发明的保护范围并非仅限于文中提到的实施例。
如图1所示,本发明的一个较佳实施例以电化学法实现钙钛矿薄膜在表面制绒的异质结电池上均匀连续的覆盖:
步骤1、表面制绒的异质结电池清洗:
步骤1.1、将表面制绒的异质结电池置于超声清洗机中,分别用去离子水、丙酮、异丙醇、乙醇清洗15分钟;
步骤1.2、最后置于紫外线下照射以去除有机污染,提高亲水性;
步骤2、在表面制绒的异质结电池表面制备金属铅层:
步骤2.1、碘化钠溶液的配置:将33.75克碘化钠(NaI,Aladdin试剂,99.99%)和15毫升亚甲基乙二醇叔丁基醚(ETB,Aladdin试剂,99%)溶解于150毫升异丙醇(2-propanol,国药试剂,99.9%)中,在45℃下搅拌3小时然后过滤取150毫升澄清溶液;
步骤2.2、碘化铅溶液的配置:将1.383克碘化铅(PbI2,Sigma-Aldrich,99.99%)加入上述150毫升澄清溶液中搅拌至澄清;
步骤2.3、金属铅层的制备:将表面制绒的异质结电池置于盛有上述澄清溶液的电化学工作站中,用恒电流法在表面制绒的异质结电池上沉积金属铅层,使用的电流为-5mA(相对开路),通电时间为400s;
步骤2.4、将制得的带有金属铅层的表面制绒的异质结电池取出用异丙醇(2-propanol,国药试剂,99.9%)冲洗并烘干;
步骤3、将表面制绒的异质结电池上含有的所述金属铅层转化为所述钙钛矿薄膜:
步骤3.1、甲基碘化铵溶液的配置:将1克甲基碘化铵(MAI,西安宝莱特,99.9%)溶解于100毫升异丙醇(2-propanol,国药试剂,99.9%)中,在室温下搅拌至澄清。
步骤3.2、在电化学工作站中用方波电流法将表面制绒的异质结电池上含有的所述金属铅层转化为所述钙钛矿薄膜。金属铅层迅速地转化为MAPbI3钙钛矿薄膜。
如图2所示,本发明的一个较佳实施例中得到的MAPbI3钙钛矿薄膜、Pb薄膜和表面制绒的异质结电池XRD图谱。如图3所示,本发明的一个较佳实施例中得到的表面制绒的异质结电池、Pb薄膜和MAPbI3钙钛矿薄膜的扫描电子显微镜(SEM)图片。结果表明,金属铅层迅速地转化为MAPbI3钙钛矿薄膜。
如图4所示,本发明的一个较佳实施例的钙钛矿/晶硅叠层太阳电池结构示意图,如图5所示,按照此示意图,在FDTD软件中进行建模和模拟计算,得到本发明的一个较佳实施例的模拟外量子效率(EQE)谱线,如图6所示,按照此示意图,在FDTD软件中进行建模和模拟计算,本发明的一个较佳实施例的模拟电流密度-电压(J-V)谱线。
以上详细描述了本发明的较佳具体实施例。应当理解,本领域的普通技术无需创造性劳动就可以根据本发明的构思作出诸多修改和变化。因此,凡本技术领域中技术人员依本发明的构思在现有技术的基础上通过逻辑分析、推理或者有限的实验可以得到的技术方案,皆应在由权利要求书所确定的保护范围内。

Claims (10)

1.一种在表面制绒的异质结电池上制备钙钛矿薄膜的方法,其特征在于,所述方法包括以下步骤:
步骤1、将所述表面制绒的异质结电池清洗干净;
步骤2、在所述清洗干净的表面制绒的异质结电池表面采用电化学法制备金属铅层;
步骤3、采用电化学法将所述金属铅层转化为钙钛矿薄膜。
2.如权利要求1所述的在表面制绒的异质结电池上制备钙钛矿薄膜的方法,其特征在于,所述步骤1还包括:
步骤1.1、首先将所述表面制绒的异质结电池放置于超声清洗机中清洗;
步骤1.2、然后将所述表面制绒的异质结电池置于紫外线下照射以去除有机污染,提高亲水性。
3.如权利要求1所述的在表面制绒的异质结电池上制备钙钛矿薄膜的方法,其特征在于,步骤1.1所述清洗为依次用去离子水、丙酮、异丙醇、乙醇各清洗15分钟。
4.如权利要求1所述的在表面制绒的异质结电池上制备钙钛矿薄膜的方法,其特征在于,所述步骤2还包括:
步骤2.1、将每37.5克的碘化钠和每15ml亚甲基乙二醇叔丁基醚溶解于150ml异丙醇中,搅拌然后过滤取150ml澄清溶液;
步骤2.2、将每1.383克的碘化铅加入150ml所述澄清溶液中搅拌至澄清;
步骤2.3、在电化学工作站中用恒电流法在所述表面制绒的异质结电池上沉积所述金属铅层;
步骤2.4、将制得的带有所述金属铅层的所述表面制绒的异质结电池取出后冲洗并烘干。
5.如权利要求4所述的在表面制绒的异质结电池上制备钙钛矿薄膜的方法,其特征在于,步骤2.1所述搅拌温度为45℃,搅拌时间为3小时。
6.如权利要求4所述的在表面制绒的异质结电池上制备钙钛矿薄膜的方法,其特征在于,步骤2.3所述所述恒电流法使用的电流为-5mA(相对开路),通电时间为400秒。
7.如权利要求4所述的在表面制绒的异质结电池上制备钙钛矿薄膜的方法,其特征在于,步骤2.4所述冲洗为用异丙醇冲洗。
8.如权利要求1所述的在表面制绒的异质结电池上制备钙钛矿薄膜的方法,其特征在于,所述步骤3还包括:
步骤3.1、按每1克甲基碘化铵对应100ml异丙醇配比,并在室温下搅拌至澄清,制备所述甲基碘化铵/异丙醇溶液;
步骤3.2、在电化学工作站中用方波电流法将表面制绒的异质结电池上含有的所述金属铅层转化为所述钙钛矿薄膜。
9.如权利要求8所述的在表面制绒的异质结电池上制备钙钛矿薄膜的方法,其特征在于,所述步骤3.2中所述方波电流法使用的电流为-5mA(相对开路)持续100毫秒,切换至+5mA(相对开路)持续100毫秒,如此为一个周期。
10.如权利要求9所述的在表面制绒的异质结电池上制备钙钛矿薄膜的方法,其特征在于,所述方波电流法共循环2000个周期即400秒。
CN202011002388.0A 2020-09-22 2020-09-22 一种在表面制绒的异质结电池上制备钙钛矿薄膜的方法 Active CN112151637B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011002388.0A CN112151637B (zh) 2020-09-22 2020-09-22 一种在表面制绒的异质结电池上制备钙钛矿薄膜的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011002388.0A CN112151637B (zh) 2020-09-22 2020-09-22 一种在表面制绒的异质结电池上制备钙钛矿薄膜的方法

Publications (2)

Publication Number Publication Date
CN112151637A true CN112151637A (zh) 2020-12-29
CN112151637B CN112151637B (zh) 2022-04-22

Family

ID=73896178

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011002388.0A Active CN112151637B (zh) 2020-09-22 2020-09-22 一种在表面制绒的异质结电池上制备钙钛矿薄膜的方法

Country Status (1)

Country Link
CN (1) CN112151637B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114134549A (zh) * 2021-11-25 2022-03-04 上海交通大学 一种通过硫酸根阴离子修饰来改进电化学合成钙钛矿薄膜的方法及应用

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107394176A (zh) * 2017-07-31 2017-11-24 中国地质大学(北京) 硅碳复合材料、制备方法和应用及锂离子电池负极材料
CN109524487A (zh) * 2018-11-26 2019-03-26 西安交通大学 具有微观圆滑棱角的绒面电池硅其及制备方法
CN109524488A (zh) * 2018-11-26 2019-03-26 西安交通大学 具有纳米尺度凸起的仿金字塔绒面增阻层的制备方法
CN111211224A (zh) * 2020-01-09 2020-05-29 上海交通大学 一种快速低成本制备商用钙钛矿薄膜的方法
CN111525037A (zh) * 2020-04-21 2020-08-11 泰州中来光电科技有限公司 钙钛矿/N型TOPCon/钙钛矿叠层太阳能电池的制备方法及其电池

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107394176A (zh) * 2017-07-31 2017-11-24 中国地质大学(北京) 硅碳复合材料、制备方法和应用及锂离子电池负极材料
CN109524487A (zh) * 2018-11-26 2019-03-26 西安交通大学 具有微观圆滑棱角的绒面电池硅其及制备方法
CN109524488A (zh) * 2018-11-26 2019-03-26 西安交通大学 具有纳米尺度凸起的仿金字塔绒面增阻层的制备方法
CN111211224A (zh) * 2020-01-09 2020-05-29 上海交通大学 一种快速低成本制备商用钙钛矿薄膜的方法
CN111525037A (zh) * 2020-04-21 2020-08-11 泰州中来光电科技有限公司 钙钛矿/N型TOPCon/钙钛矿叠层太阳能电池的制备方法及其电池

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
FLORENT SAHLI等: """Fully textured monolithic perovskite/silicon tandem soalr cells with 25.2% power conversion efficiency"", 《NATURE MATERIALS》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114134549A (zh) * 2021-11-25 2022-03-04 上海交通大学 一种通过硫酸根阴离子修饰来改进电化学合成钙钛矿薄膜的方法及应用

Also Published As

Publication number Publication date
CN112151637B (zh) 2022-04-22

Similar Documents

Publication Publication Date Title
CN104241447B (zh) 一种铜锌锡硫薄膜材料的制备方法
CN103296211B (zh) 有机-二维晶体-无机杂化的异质结太阳能电池器件及其制备方法
CN106169537A (zh) 一种太阳能电池的制备方法
CN111525034B (zh) 一种高效稳定的混合维度钙钛矿太阳能电池的制备方法
CN112151637B (zh) 一种在表面制绒的异质结电池上制备钙钛矿薄膜的方法
CN102185021B (zh) 基于薄铜片衬底的柔性CuInS2太阳能电池的制备方法
CN104310794A (zh) 三维纳米棒花结构的多孔TiO2纳米晶薄膜、制备方法及应用
CN113471366B (zh) 基于环己甲胺碘盐的2d/3d钙钛矿太阳能电池的制备方法
CN101409158B (zh) 染料敏化太阳电池分级微纳结构ZnO电极材料及电极的制备方法
CN111893449A (zh) 自支撑微纳结构TiO2薄膜及染料敏化太阳能电池制备方法
CN103924306B (zh) 一种硅异质结太阳电池的制绒方法
CN110165020A (zh) 一种基于CdS/SnO2混合N型层的高效Sb2Se3薄膜电池及其制备方法
CN111739986A (zh) 一种提高高效晶硅异质结太阳能电池短路电流的方法
CN103073194B (zh) 一种ZnO纳米柱和ZnO纳米片层复合结构材料的制备方法
CN108695435B (zh) 一种基于超声波退火工艺的有机太阳能电池及其制备方法
CN114220923A (zh) 钙钛矿薄膜的制备方法及钙钛矿太阳能电池的制备方法
CN109244245A (zh) 一种平面钙钛矿太阳能电池及其制备方法
CN111211224A (zh) 一种快速低成本制备商用钙钛矿薄膜的方法
CN108493342B (zh) 氯化钠修饰反型结构聚合物太阳能电池及其制备方法
CN112151634A (zh) 在具有绒面的晶硅太阳电池表面涂覆钙钛矿材料的方法
CN109545974B (zh) 绒面均匀钙钛矿膜的高粘液膜抑爬原位析晶制备方法
CN103346261A (zh) 一种TiO2与MEH-PPV杂化复合异质结薄膜太阳能电池及其制备与应用
CN112542547A (zh) 一种钙钛矿太阳能电池薄膜吸收层的制备方法
CN108336181B (zh) 一种太阳能电池及其制备方法
CN104934230A (zh) 一种宽光强适用范围二氧化纳米管阵列复合光阳极的制备方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant