CN112129723A - Method for integrating metamaterial absorber and gas selective adsorption film for gas sensing and sensor - Google Patents
Method for integrating metamaterial absorber and gas selective adsorption film for gas sensing and sensor Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004697 Polyetherimide Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
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- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
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- 230000003287 optical effect Effects 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229920001601 polyetherimide Polymers 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 239000005083 Zinc sulfide Substances 0.000 claims description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 2
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- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- -1 but not limited to Substances 0.000 claims 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/40—Concentrating samples
- G01N1/4005—Concentrating samples by transferring a selected component through a membrane
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/40—Concentrating samples
- G01N1/4005—Concentrating samples by transferring a selected component through a membrane
- G01N2001/4016—Concentrating samples by transferring a selected component through a membrane being a selective membrane, e.g. dialysis or osmosis
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Abstract
A metamaterial absorber and a gas selective adsorption film integrated method for gas sensing and a sensor are provided, wherein a metamaterial absorber and gas selective adsorption film integrated structure is arranged in a gas cavity of the gas sensor, the metamaterial absorber comprises a substrate, a metal layer, a dielectric layer and a periodic nano metal structure from bottom to top, and the gas selective adsorption film is manufactured on the periodic nano metal structure; when light emitted by the light source irradiates the air inlet cavity, the air flows into the air cavity, the air is absorbed and enriched by the air selective adsorption film coated on the surface of the metamaterial absorber, the infrared absorption effect is enhanced through the surface of the metamaterial absorber, the light emitted by the light source is reflected in the air cavity through the integrated structure of the metamaterial absorber and the air selective adsorption film, and finally the concentration of the air is obtained by the detector. The invention has the advantages of high detection speed, small volume, high sensitivity, high detection limit and suitability for simultaneously detecting various gases.
Description
Technical Field
The invention relates to the field of gas sensing, in particular to an infrared gas sensor.
Background
The atmosphere is one of the most important environmental elements for human beings to live, but with the rapid development of social economy, industrialization and increasing level of urbanization, the problem of air pollution is more and more serious, and on the one hand, the air pollution condition affects the change of global environment, such as the carbon dioxide Concentration (CO) in the atmosphere2) The enhancement of greenhouse effect caused by rising is the most main influence on global climate; on the other hand, air pollution is also closely related to the health condition of each person, and the prevalence rate of pollutants in the air is increased after the pollutants continuously act on a human body for a long time at a low concentration. Therefore, how to realize accurate, quick and effective detection of the polluted gas is the primary measure for protecting the environment, the human life and the health.
Gas sensors have received much attention as important instruments for gas detection. The semiconductor gas sensor has the advantages of low cost, simple manufacture, high sensitivity, high response speed and the like, so that the semiconductor gas sensor is the most common and practical gas sensor in current application, but has poor selectivity on gas and low stability, and can only be used at a civil level. The infrared gas sensor has the remarkable advantages of high precision, good selectivity, high reliability, no poisoning, small environmental interference factor, long service life and the like, and has great application potential, but the infrared gas sensor is still in a starting stage, has higher manufacturing cost and limits wide application.
The current detection method of infrared gas sensors is light source-gas chamber-infrared detector, such as patents CN110687065, CN110687064A, CN111208083A, CN210514064U, etc. The principle of the method is to measure the absorption rate of infrared gas to infrared light by utilizing Lambert beer law. However, in the case of a very dilute gas to be detected, the gas concentration is low, and this method cannot achieve reliable detection or cannot detect it at all. In this case, the infrared gas sensor has the disadvantages of low detection level, low sensitivity, and incapability of detecting gas with ultra-low concentration.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a method for integrating a metamaterial absorber and a gas selective adsorption film for gas sensing and a gas sensor.
The technical scheme of the invention is as follows:
the invention provides a method for integrating a metamaterial absorber and a gas selective adsorption film for gas sensing, which is characterized in that a metamaterial absorber and gas selective adsorption film integrated structure is arranged in a gas cavity of a gas sensor, the metamaterial absorber and gas selective adsorption film integrated structure comprises a gas selective adsorption film and a metamaterial absorber, the metamaterial absorber comprises a substrate, a metal layer, a dielectric layer and a periodic nano metal structure from bottom to top, and the gas selective adsorption film is manufactured on the periodic nano metal structure; when light emitted by the light source irradiates the air inlet cavity, the air flows into the air cavity, the air is absorbed and enriched by the integrated structure of the metamaterial absorber and the air selective adsorption film, the infrared absorption effect is enhanced through the surface of the metamaterial absorber, the light emitted by the light source is reflected in the air cavity through the integrated structure of the metamaterial absorber and the air selective adsorption film, and finally the light is received by the detector to obtain the concentration of the gas to be detected.
The invention also provides a gas sensor, which realizes the gas sensing method and comprises a gas cavity, a light source and a detector which are arranged outside the gas cavity, wherein the gas cavity is provided with a gas inlet and a gas outlet; a metamaterial absorber and a gas selective adsorption film integrated structure are arranged in the gas cavity; the metamaterial absorber and gas selective adsorption film integrated structure comprises a gas selective adsorption film and a metamaterial absorber, wherein the gas selective adsorption film is a porous material, and the absorption and enrichment of specific gas are realized by spin coating a chip or placing the chip in a solution to form a film on the surface of the metamaterial absorber. The metamaterial absorber comprises a metal layer, a dielectric layer and a periodic nano metal structure which are sequentially generated on a substrate, the substrate achieves a supporting effect, and the metal layer, the dielectric layer and the periodic nano metal structure form a metal-dielectric layer-metal structure which is used for exciting a surface plasma near field. The gas selective adsorption film is fabricated on the periodic nano-metal structure.
The light source and the detector are positioned on one side of the gas selective adsorption film of the metamaterial absorber and gas selective adsorption film integrated structure and are opposite to the light source and the detector, so that the gas is selectively absorbed and enriched, and the light emitted by the light source is reflected.
The infrared gas sensor provided by the invention combines the gas selective adsorption film with the metamaterial absorber for the infrared gas sensor of the reflection-type test, and has the advantages of high detection speed, small volume, high sensitivity, high detection limit and suitability for simultaneously detecting various gases. The defects of low selectivity and high cost of the existing gas sensor can be effectively overcome.
Drawings
FIG. 1 shows a schematic view of an infrared gas sensor of the present invention.
Fig. 2 shows a schematic structural diagram of the metamaterial absorber of the present invention.
In the figure, 1 — light source; 2-a detector; 3-an air cavity; 4-1-gas inlet; 4-2-gas outlet; 5-gas selective adsorption membranes; 6-1-periodic nano-metal structures; 6-2-dielectric layer; 6-3-metal layer; 6-4-substrate.
Detailed description of the preferred embodiments
The present invention is described in further detail below with reference to the accompanying drawings.
The gas sensing method provided by the invention can be realized by a sensor structure shown in figure 1, and mainly comprises a light source 1, a detector 2, an air cavity 3, a metamaterial absorber and a gas selective adsorption film integrated structure. The integrated structure of the metamaterial absorber and the gas selective adsorption film consists of a selective adsorption film 4 and a metamaterial absorber 6. The air cavity 3 is square, the light source 1 and the detector 2 are arranged on the same side outside the air cavity 3, and the metamaterial absorber and the gas selective adsorption film integrated structure are arranged on one side, opposite to the light source and the detector, in the air cavity and are located at positions most favorable for absorption and reflection.
Referring to fig. 2, the metamaterial absorber is composed of a substrate 6-4, a metal layer 6-3, a dielectric layer 6-2 and a periodic nano metal structure 6-1 in sequence from bottom to top. The gas selective adsorption film 4 forms a thin film on the periodic nano metal structure 6-1 by spin coating the chip or placing the chip in a solution.
The working principle of the infrared gas sensor is as follows: the light source 1 emits infrared light, the gas selective adsorption film is uniformly coated on the surface of the metamaterial absorber to absorb specific gas, signals received by the detector are different from signals before gas absorption after gas adsorption, and specific concentration of the gas is obtained through subsequent processing.
In the present invention, the light source can be, but is not limited to, a common infrared light source, or an infrared light source with a metamaterial structure. The embodiment adopts an infrared light source with a metamaterial structure.
In the present invention, the detector can be, but is not limited to, a photodetector, a pyroelectric detector, a detector of a microbolometer, a detector having a metamaterial structure. The embodiment adopts an infrared light source with a metamaterial structure.
In the present invention, the design of the optical cavity can be, but not limited to, square, circular or elliptical, and the present embodiment uses a square. And the optical cavity is coated with the coating with high reflection rate, so that the multiple reflection of infrared light is increased, and the detection result is more accurate.
In the present invention, the adsorptive film is a material capable of selectively adsorbing a gas, for example, a Metal Organic Framework (MOF) material, a Polyetherimide (PEI) material, or the like.
In the present invention, the periodic metal nano-antenna pattern of the metamaterial absorber may be various patterns having a surface plasmon forming effect, for example, a cross shape is used in the present embodiment, and other patterns may be appropriately substituted. The periodic metal nano antenna material can be a metal conductive material such as gold, silver, aluminum, platinum and the like.
In the present invention, the material of the dielectric layer can be, but not limited to, silicon oxide, silicon nitride, zinc oxide, zinc sulfide, zinc selenide, indium phosphide, germanium, indium sulfide, magnesium fluoride, calcium fluoride, etc.
In the present invention, the material of the metal layer may be, but not limited to, a high-reflectivity material such as gold, silver, aluminum, platinum, etc.
In the present invention, the substrate material may be, but is not limited to, silicon dioxide, and the like.
While there has been shown and described what are at present considered to be the fundamental principles and essential features of the invention and its advantages, it will be understood by those skilled in the art that the invention is not limited by the foregoing embodiments, but is capable of numerous changes without departing from the spirit and scope of the invention, such insubstantial changes being made within the scope of the invention as claimed.
Claims (10)
1. A method for integrating a metamaterial absorber and a gas selective adsorption film for gas sensing is characterized in that a metamaterial absorber and gas selective adsorption film integrated structure is arranged in a gas cavity of a gas sensor, the metamaterial absorber and gas selective adsorption film integrated structure comprises a gas selective adsorption film and a metamaterial absorber, the metamaterial absorber comprises a substrate, a metal layer, a dielectric layer and a periodic nano metal structure from bottom to top, and the gas selective adsorption film is manufactured on the periodic nano metal structure; when light emitted by the light source irradiates the air inlet cavity, the air flows into the air cavity, the air is absorbed and enriched by the air selective adsorption film coated on the surface of the metamaterial absorber, the infrared absorption effect is enhanced through the surface of the metamaterial absorber, the light emitted by the light source is reflected in the air cavity through the integrated structure of the metamaterial absorber and the air selective adsorption film, and finally the concentration of the air is obtained by the detector.
2. A gas sensor for realizing the method of claim 1, which comprises a gas cavity, a light source and a detector arranged outside the gas cavity, wherein the gas cavity is provided with a gas inlet and a gas outlet; a metamaterial absorber and a gas selective adsorption film integrated structure are arranged in the gas cavity; the metamaterial absorber and gas selective adsorption film integrated structure comprises a gas selective adsorption film and a metamaterial absorber, wherein the metamaterial absorber comprises a metal layer, a dielectric layer and a periodic nano metal structure which are sequentially generated on a substrate, and the gas selective adsorption film is manufactured on the periodic nano metal structure; the light source and the detector are positioned on one side of the gas selective adsorption film of the metamaterial absorber and gas selective adsorption film integrated structure and are opposite to the light source and the detector, so that the gas is selectively absorbed and enriched, and the light emitted by the light source is reflected.
3. The gas sensor according to claim 2, wherein the light source and the detector are disposed on the same side outside the gas cavity, and the metamaterial absorber and gas selective adsorption film integrated structure is disposed on the opposite side of the gas cavity from the light source and the detector.
4. The gas sensor according to claim 2, wherein the gas selective adsorption membrane is made of a material that selectively adsorbs gas, including but not limited to Metal Organic Framework (MOF) material, Polyetherimide (PEI).
5. The gas sensor according to claim 2 or 3, wherein the periodic nano-metal structure of the metamaterial absorber is a nano-antenna structure, and adopts one or more different shapes, and the material can be a metal conductive material such as gold, silver, aluminum, platinum and the like.
6. The gas sensor according to claim 2 or 3, wherein the material of the dielectric layer is selected from the group consisting of but not limited to silicon, silicon oxide, silicon nitride, zinc oxide, zinc sulfide, zinc selenide, indium phosphide, germanium, indium sulfide, magnesium fluoride, calcium fluoride, etc.
7. The gas sensor according to claim 2 or 3, wherein the material of the metal layer is a reflective material such as, but not limited to, gold, silver, aluminum, platinum, etc.; the substrate material may be, but is not limited to, silicon dioxide, and the like.
8. A gas sensor according to claim 2 or 3, wherein the gas cavity is an optical cavity with a reflective coating inside, and the design of the optical cavity can be, but is not limited to, square, circular or elliptical.
9. Gas sensor according to claim 2 or 3, characterized in that the light source can be, but is not limited to, a common infrared light source or an infrared light source with a metamaterial structure.
10. Gas sensor according to claim 2 or 3, characterized in that the detector can be, but is not limited to, a photodetector, a pyroelectric detector, a microbolometer detector, a detector with a metamaterial structure.
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| CN202011009924.XA CN112129723A (en) | 2020-09-23 | 2020-09-23 | Method for integrating metamaterial absorber and gas selective adsorption film for gas sensing and sensor |
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| CN202011009924.XA CN112129723A (en) | 2020-09-23 | 2020-09-23 | Method for integrating metamaterial absorber and gas selective adsorption film for gas sensing and sensor |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112595818A (en) * | 2020-12-30 | 2021-04-02 | 武汉微纳传感技术有限公司 | Enhanced gas detection sensor |
| CN113702333A (en) * | 2021-07-01 | 2021-11-26 | 西北工业大学 | Optical sensor with metal-organic frame-based MIM structure and preparation method thereof |
| CN114112973A (en) * | 2021-12-06 | 2022-03-01 | 哈尔滨工业大学 | Gas sensing framework based on high-carrier-concentration conductive film and sensor |
| CN114370937A (en) * | 2022-01-19 | 2022-04-19 | 河北大学 | Infrared optical detection system and method based on quartz tuning fork surface plasmon enhanced absorption |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112595818A (en) * | 2020-12-30 | 2021-04-02 | 武汉微纳传感技术有限公司 | Enhanced gas detection sensor |
| CN113702333A (en) * | 2021-07-01 | 2021-11-26 | 西北工业大学 | Optical sensor with metal-organic frame-based MIM structure and preparation method thereof |
| CN114112973A (en) * | 2021-12-06 | 2022-03-01 | 哈尔滨工业大学 | Gas sensing framework based on high-carrier-concentration conductive film and sensor |
| CN114112973B (en) * | 2021-12-06 | 2023-08-11 | 哈尔滨工业大学 | Gas sensing architecture and sensor based on high-carrier-concentration conductive film |
| CN114370937A (en) * | 2022-01-19 | 2022-04-19 | 河北大学 | Infrared optical detection system and method based on quartz tuning fork surface plasmon enhanced absorption |
| CN114370937B (en) * | 2022-01-19 | 2023-11-14 | 河北大学 | Infrared optical detection system and method based on quartz tuning fork surface plasmon enhanced absorption |
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