CN110132877A - A kind of integrated infrared gas sensor based on MEMS - Google Patents
A kind of integrated infrared gas sensor based on MEMS Download PDFInfo
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- CN110132877A CN110132877A CN201910523909.8A CN201910523909A CN110132877A CN 110132877 A CN110132877 A CN 110132877A CN 201910523909 A CN201910523909 A CN 201910523909A CN 110132877 A CN110132877 A CN 110132877A
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- 230000003287 optical effect Effects 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 238000009434 installation Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 22
- 239000010408 film Substances 0.000 claims description 14
- 238000010521 absorption reaction Methods 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 230000013011 mating Effects 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 12
- 238000013461 design Methods 0.000 description 11
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 208000002925 dental caries Diseases 0.000 description 2
- 238000009795 derivation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000005616 pyroelectricity Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N2021/0106—General arrangement of respective parts
- G01N2021/0112—Apparatus in one mechanical, optical or electronic block
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Abstract
The present invention relates to a kind of integrated infrared gas sensor based on MEMS, including PCB, unencapsulated MEMS infrared light supply, unencapsulated infrared detector, gas chamber, optical filter and metal shell；Metal shell is fixed on PCB, and metal shell and PCB form installation room, and unencapsulated MEMS infrared light supply, unencapsulated infrared detector, optical filter and gas chamber setting are in installation room；Gas chamber is enclosed by gas chamber shell to be set, and gas chamber shell is fixed on PCB, and the bottom of gas chamber shell offers venthole；Through-hole is offered on PCB, venthole is connected with through-hole.The present invention is based on MEMS technologies, realize the integrated infrared gas sensor of chip-scale, greatly reduce the cost of infrared gas sensor, greatly reduce the size of infrared gas sensor, and reduce volume；Infrared gas sensor has the characteristics that structure is simple, at low cost simultaneously, and good product consistency.
Description
Technical field
The present invention relates to a kind of integrated infrared gas sensor based on MEMS belongs to infrared gas sensor technology neck
Domain.
Background technique
Infrared gas sensor is the degree of strength by measurement various concentration gas to infrared Absorption, to determine gas
A kind of gas sensor of concentration.
Different gas has different infrared Absorption wavelength, if carbon dioxide gas is to the infrared wavelength of 4.26um
There is stronger absorption；Methane gas absorbs the infrared waves of 3.3um with relatively strong；Therefore, infrared gas sensor has preferable
Selectivity (can detector object gas, the influence of interference-free gas).
It includes: an infrared light supply, such as light bulb, MEMS light source etc. that infrared gas sensor, which generally forms, for emitting
Infrared light, spectrum are generally wide spectrum optical (having each wavelength)；One gas chamber, for passing to infrared light, while supplied gas into
Out and fully absorb infrared light；One optical filter, for the characteristic absorption wavelength of object gas to be filtered out；One infrared spy
Device, such as MEMS thermopile, MEMS pyroelectricity, photon type detector etc. are surveyed, for detecting infrared light.
Currently, the generally existing size of infrared gas sensor is big, at high cost, production technology is backward and homogeneity of product is poor
The problem of.It is larger-size main reason is that gas chamber cavity is larger, and light source after encapsulation and infrared detector volume compared with
Greatly.The light source and infrared detector that infrared sensor is used are required to be individually encapsulated, packaging cost even chip cost
Several times.In addition, since the optical path section among gas chamber shell is larger, it is therefore desirable to the biggish optical filter of area (about 2mm*2mm),
And the cost of optical filter is high, therefore considerably increases its cost.
Infrared gas sensor gradually develops to the sensing of miniaturization more compact by development in 30 years from separation system
Device module, but still can not be criticized with advanced semiconductor technology by the assembling mode of traditional craft or semi-automation
Quantization is mass produced at low cost.In traditional craft and semi-automatic assembling, due to the qualification of operator
With the difference of assembly precision, so that the alignment precision of light source and infrared detector is lower, coupling deviation is increased, and finally makes product
Consistency it is very poor, therefore subsequent go to demarcate product one by one.
Chinese patent literature CN104122223B is related to a kind of more gas infrared gas sensors of double light paths, and main includes double
The more gas-detecting cavities of light path, infrared light supply, multiunit detector, waterproof ventilated membrane, signal amplification module, analog-to-digital conversion module, letter
Number processing module, communicative indication module.The lower half portion that infrared light supply issues infrared light reaches more after plane mirror reflects
First detector lower half portion constitutes the 1st short light path；The top half that infrared light supply issues infrared light is multiple through annular inner cavity surface
Multiunit detector top half is reached after reflection, constitutes the 2nd long light path, long and short two kinds of light paths are realized in single-chamber room.The hair
It is bright to provide a kind of length difference optical path design, but structure is complex, and integrated level is lower.
Chinese patent literature CN102507494A is related to a kind of non-dispersive infrared methane sensor, specifically a kind of light path and
Light-intensity-adjustable infrared methane gas sensor.Including be made of infrared light supply and spherical reflector infrared transmitter, be equipped with
The pyroelectricity methane detector and straight tube gas chamber of signal and reference window；Envelope is covered at the both ends of straight tube gas chamber respectively detector
Anchor tip and plane mirror connector；Straight tube gas chamber both ends side wall is respectively provided with a venthole.The invention solves existing non-
Dispersion infrared methane sensor can only measure the problem of methane gas of higher concentration, but volume is larger, higher cost, be not suitable for
Applied to fields such as the consumer electronics high to volume and cost requirement.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of integrated infrared gas sensor based on MEMS.
The present invention is based on MEMS technologies, realize the integrated infrared gas sensor of chip-scale, greatly reduce infrared-gas
The cost of sensor simultaneously reduces its volume；Infrared gas sensor has the characteristics that structure is simple, at low cost simultaneously.
Explanation of nouns
MEMS:Micro-Electro-Mechanical System, MEMS.
PCB:Printed Circuit Board, printed wiring board.
The technical solution of the present invention is as follows:
A kind of integrated infrared gas sensor based on MEMS including PCB, unencapsulated MEMS infrared light supply, does not seal
Infrared detector, gas chamber, optical filter and the metal shell of dress；
The metal shell is fixed on the pcb, and the metal shell and PCB form installation room, described unencapsulated
MEMS infrared light supply, unencapsulated infrared detector, optical filter and gas chamber are arranged in the installation room；
The gas chamber is enclosed by gas chamber shell to be set, and the gas chamber shell is fixed on the pcb, and the gas chamber shell
Bottom offer venthole；Through-hole is offered on the PCB, the venthole is connected with the through-hole, enters gas
In gas chamber；
The unencapsulated MEMS infrared light supply and the unencapsulated infrared detector are fixed on the both ends of the PCB,
And it is located at the two sides bottom end of the gas chamber shell；The light well of unencapsulated the MEMS infrared light supply and gas chamber shell
It is connected, the unencapsulated infrared detector is connected with the light hole of gas chamber shell；Unencapsulated MEMS infrared light supply is used
In transmitting infrared light；Gas chamber provides transmission channel for infrared light, provides the space of gas Yu infrared light reaction, and gas passes in and out gas chamber
And absorb infrared light；Optical filter is for filtering out the characteristic absorption wavelength of object gas；Unencapsulated infrared detector is used
Infrared light after detection object gas absorbs.
Integrated infrared gas sensor based on MEMS is the monitoring that gas is carried out based on Infrared spectra adsorption technology.
According to Lambert-Beer's law: I=η I0exp(-KLC)(I)
In public formula (I), η is the coupling infra-red light efficiency of sensing system, I0It is the light intensity of light source transmitting, K is gas
Absorption coefficient, C are the concentration of gas, and L is light path of the infrared light in gas chamber.
Derivation, the sensitivity of available sensor: dI/dC=- η I are carried out to public formula (I)0KL exp (- KLC), thus
It can be concluded that higher coupling efficiency (η), can be realized under identical sensitivity requirement using shorter light path, thus
Reduce the size of gas chamber.In addition, being unified after integrated since integrated infrared gas sensor is integrated using chip-scale
Encapsulation compares the mode of the separation packaging assembling of traditional non-dispersive infrared sensor, lower cost may be implemented.
According to the present invention preferably, one end of the PCB opens up fluted, and the unencapsulated infrared detector is embedded in
In the groove, the optical filter is arranged on the unencapsulated infrared detector.This design is advantageous in that optical filter can
It is protected with being formed to infrared detector, avoids pollution and gas shock of the gas to detector.
It is preferred according to the present invention, the optical filter, the filter are provided between the bottom and top of the gas chamber shell
Entire gas chamber is divided into two independent cavitys by mating plate.Designing herein is advantageous in that, optical filter is easily installed, and reduces assembling
Difficulty.
Preferred according to the present invention, the optical filter is integrated on the chip of unencapsulated infrared detector, and described
Unencapsulated infrared detector is connected with the light hole.This design is advantageous in that optical filter is integrated in described unencapsulated
Infrared detector, narrowband infrared acquisition effect can be formed, do not need in addition to assemble optical filter again, saving cost simultaneously reduces envelope
Fill complexity.
Preferred according to the present invention, the optical filter is integrated in the unencapsulated MEMS infrared light supply, and described
Unencapsulated MEMS infrared light supply is connected with the light well.This design is advantageous in that, optical filter is integrated in described
Narrow-band light source can be formed in the chip of MEMS infrared light supply, be advantageous in that the complexity for reducing assembling, reduced cost.
Preferred according to the present invention, the optical filter is Meta Materials infrared light absorbing layer.
Preferred according to the present invention, the material of the Meta Materials infrared light absorbing layer is gold or copper.
It is preferred according to the present invention, several cross metamaterial structures are provided in the Meta Materials infrared light absorbing layer
Unit.
It is preferred according to the present invention, reflecting surface, the gas are provided on the inner wall arranged on left and right sides face of the gas chamber shell
The above and below of room housing is provided with reflexed light film.This design is advantageous in that arranged on left and right sides is provided with reflecting surface on face
The anaclasis for being respectively used to light source to emit is into gas chamber, in the anaclasis to detector in gas chamber；Reflexed light film is for dropping
Loss of the low light in wherein transmission.
Preferred according to the present invention, the reflexed light film is one of gold thin film, aluminium film, bragg reflection film.
The invention has the benefit that
1. structure is smaller: utilizing chip-scale assembling mode, carry out unified encapsulation after assembling again, greatly reduce its structure ruler
It is very little.
2. cost is relatively low, packaging cost is low, and encapsulation is simple, and light source used in infrared sensor, detector and
Gas chamber pipe section shares an encapsulation, greatly reduces packaging cost；It is assembled into background.The design can use full-automatic half
Conductor sealed in unit is assembled and is encapsulated, and cost of labor is substantially reduced.
3. good product consistency: it is assembled and is encapsulated using full-automatic semiconductor packaging device, assembly precision
± 15um is easily reached, significantly larger than based on manual assembling mode, therefore good product consistency, later period can pass through sampling
Calibration mode, instead of traditional low speed demarcated one by one, high cost way.
4. the present invention provides the integrated infrared gas sensor based on MEMS, it can be used for SMD patch production occasion, expand
The application field of infrared gas sensor.
Detailed description of the invention
Integrated infrared gas sensor based on MEMS provided by Fig. 1 embodiment of the present invention 1.
Fig. 2 embodiment of the present invention 1 provides the three dimensional structure diagram of the integrated infrared gas sensor based on MEMS.
Propagation path schematic diagram of the infrared light that Fig. 3 is emulated based on ZEMAX in integrated infrared gas sensor.
Fig. 4 unencapsulated infrared detector detects the schematic diagram of incoherent irradiation intensity.
Integrated infrared gas sensor based on MEMS provided by Fig. 5 embodiment of the present invention 2.
Integrated infrared gas sensor based on MEMS provided by Fig. 6 embodiment of the present invention 3.
The overlooking structure diagram of Fig. 7 Meta Materials infrared light absorbing layer.
Integrated infrared gas sensor based on MEMS provided by Fig. 8 embodiment of the present invention 4.
1, reflecting surface, 2, metal shell, 3, gas chamber shell, 4, optical filter, 5, PCB, 6, unencapsulated MEMS infrared light supply,
7, unencapsulated infrared detector, 8, venthole, 9, through-hole, 10, metal pad, 11, Meta Materials infrared light absorbing layer, 12, ten
Font metamaterial structure unit.
Specific embodiment
Below with reference to embodiment and Figure of description, the present invention will be further described, but not limited to this.
Embodiment 1
As depicted in figs. 1 and 2, a kind of integrated infrared gas sensor based on MEMS, including PCB5, unencapsulated
MEMS infrared light supply 6, unencapsulated infrared detector 7, gas chamber, optical filter 4, metal shell 2 and metal pad 10.
Metal shell 2 is fixed on PCB5, and metal shell 2 and PCB5 form installation room, unencapsulated MEMS infrared light supply
6, unencapsulated infrared detector 7, optical filter 4 and gas chamber setting are in installation room.
Gas chamber is enclosed by gas chamber shell 3 to be set, and gas chamber shell 3 is fixed on PCB5, and the bottom of gas chamber shell 3 offers
Venthole 8；Through-hole 9 is offered on PCB5, venthole 8 is connected with through-hole 9, enters in gas chamber convenient for gas.
Unencapsulated MEMS infrared light supply 6 and unencapsulated infrared detector 7 are fixed on the both ends of PCB5, and position respectively
In the two sides bottom end of gas chamber shell 3；Unencapsulated MEMS infrared light supply 6 is connected with the light well of gas chamber shell 3, unencapsulated
Infrared detector 7 is connected with the light hole of gas chamber shell 3；Unencapsulated MEMS infrared light supply 6 is for emitting infrared light；Gas chamber
Transmission channel is provided for infrared light, the space of gas Yu infrared light reaction is provided, gas disengaging gas chamber simultaneously absorbs infrared light；It filters
Piece 4 is for filtering out the characteristic absorption wavelength of object gas；Unencapsulated infrared detector 7 is for detecting object gas suction
Infrared light after receipts.
The course of work of integrated infrared gas sensor: unencapsulated MEMS infrared light supply 6 emits infrared light by entering light
Hole enters in gas chamber, and the venthole 8 of through-hole 9, gas chamber that gas successively passes through on PCB5 reaches plenum interior, and gas passes in and out gas
In room, infrared light can absorb object gas, and infrared light is projected by reflection from light hole in gas chamber inner wall, by unencapsulated infrared
Detector 7 is detected, by the content of object gas in the available gas of the test result of infrared detector.
The principle of integrated infrared gas sensor based on MEMS is identical as traditional non-dispersive infrared gas sensor,
It is the monitoring based on Infrared spectra adsorption technology progress gas, but due to using chip hybrid-package technology, it can be achieved that higher
Coupling efficiency.
According to Lambert-Beer's law: I=η I0exp(-KLC) (I)
In public formula (I), η is the coupling infra-red light efficiency of sensing system, I0It is the light intensity of light source transmitting, K is gas
Absorption coefficient, C are the concentration of gas, and L is light path of the infrared light in gas chamber.
Derivation, the sensitivity of available sensor: dI/dC=- η I are carried out to public formula (I)0KL exp (- KLC), thus
It can be concluded that higher coupling efficiency (η), can be realized under identical sensitivity requirement using shorter light path, thus
Reduce the size of gas chamber.In addition, being unified after integrated since integrated infrared gas sensor is integrated using chip-scale
Encapsulation compares the mode of the separation packaging assembling of traditional non-dispersive infrared sensor, lower cost may be implemented.
One end of PCB5 opens up fluted, the unencapsulated insertion of infrared detector 7 in a groove, and optical filter 4 is arranged not
On the infrared detector 7 of encapsulation.This design is advantageous in that optical filter 4 can form infrared detector and protect, and avoids gas
Pollution and gas shock to detector.
It is provided with reflecting surface 1 on the inner wall arranged on left and right sides face of gas chamber shell 3, the above and below of gas chamber shell 3 is respectively provided with
There is reflexed light film.This design is advantageous in that, reflecting surface 1 is provided on arranged on left and right sides face and is respectively used to light source transmitting
Anaclasis is into gas chamber, in the anaclasis to detector in gas chamber；Damage of the reflexed light film for reducing light in wherein transmission
Consumption.Reflexed light film is one of gold thin film, aluminium film, bragg reflection film.
In the present embodiment, as shown in figure 3, using the infrared light of ZEMAX emulation in integrated infrared gas sensor
Propagation path schematic diagram；Fig. 4 is the test result schematic diagram of unencapsulated infrared detector 7, is indicated in infrared acquisition range
Interior noncoherent radiation degree intensity.Integrated infrared gas sensor based on MEMS can realize higher coupling efficiency, coupling
Efficiency can achieve 50% or more, and traditional non-dispersive infrared gas sensor only has 5% or so.
Embodiment 2
According to a kind of integrated infrared gas sensor based on MEMS that embodiment 1 provides, difference is:
As shown in figure 5, being provided with optical filter 4 between the bottom and top of gas chamber shell 3, optical filter 4 divides entire gas chamber
It is cut into two independent cavitys.Designing herein is advantageous in that, optical filter 4 is easily installed, and reduces assembling difficulty.
Embodiment 3
According to a kind of integrated infrared gas sensor based on MEMS that embodiment 1 provides, difference is:
As shown in fig. 6, optical filter 4 is integrated on the chip of unencapsulated infrared detector 7, and unencapsulated infrared spy
Device 7 is surveyed to be connected with light hole.This design is advantageous in that optical filter 4 is integrated in unencapsulated infrared detector 7, can be with shape
It at narrowband infrared acquisition effect, does not need in addition to assemble optical filter 4 again, saves cost and reduce encapsulation complexity.
As shown in fig. 7, optical filter 4 is Meta Materials infrared light absorbing layer 11.This design is advantageous in that unencapsulated is infrared
The detection to the specific wavelength in infrared light may be implemented by Meta Materials infrared light absorbing layer 11 in detector 7.Meta Materials are infrared
The material of light absorbing layer 11 is gold or copper, is provided with several cross metamaterial structure lists in Meta Materials infrared light absorbing layer 11
Member 12, for realizing the absorption of narrowband infrared light.Specifically, the method preparation that Meta Materials infrared light absorbing layer 11 passes through deposition
On the chip of unencapsulated infrared detector 7.
Further, it is also possible to being prepared Prague infrared light filter layer by the method for deposition in unencapsulated infrared acquisition
On the chip of device 7, and then the detection to the specific wavelength in infrared light.
Embodiment 4
According to a kind of integrated infrared gas sensor based on MEMS that embodiment 1 provides, difference is:
As shown in figure 8, optical filter 4 is integrated in unencapsulated MEMS infrared light supply 6, and unencapsulated MEMS infrared light
Source 6 is connected with light well.This design is advantageous in that optical filter 4, which is integrated in the chip of MEMS infrared light supply, to be formed
Narrow-band light source is advantageous in that the complexity for reducing assembling, reduces cost.
As shown in fig. 7, optical filter 4 is Meta Materials infrared light absorbing layer 11, the material of Meta Materials infrared light absorbing layer 11 is
Gold or copper are provided with several cross metamaterial structure units 12 in Meta Materials infrared light absorbing layer 11, for realizing narrowband
The radiation of infrared light.Specifically, Meta Materials infrared light absorbing layer 11 is by way of deposition by Meta Materials infrared light absorbing layer
11 are deposited in unencapsulated MEMS infrared light supply 6.
Furthermore, it is possible to be prepared photonic crystal in unencapsulated MEMS infrared light supply 6 by the method for deposition, can be formed
Narrow-band light source.
Claims (10)
1. a kind of integrated infrared gas sensor based on MEMS, which is characterized in that infrared including PCB, unencapsulated MEMS
Light source, unencapsulated infrared detector, gas chamber, optical filter and metal shell；
The metal shell is fixed on the pcb, and the metal shell and PCB form installation room, the unencapsulated MEMS
Infrared light supply, unencapsulated infrared detector, optical filter and gas chamber are arranged in the installation room；
The gas chamber is enclosed by gas chamber shell to be set, and the gas chamber shell is fixed on the pcb, and the bottom of the gas chamber shell
Portion offers venthole；Through-hole is offered on the PCB, the venthole is connected with the through-hole；
The unencapsulated MEMS infrared light supply and the unencapsulated infrared detector are fixed on the both ends of the PCB, and
It is located at the two sides bottom end of the gas chamber shell；The unencapsulated MEMS infrared light supply is connected with the light well of gas chamber shell
Logical, the unencapsulated infrared detector is connected with the light hole of gas chamber shell；Unencapsulated MEMS infrared light supply is for sending out
Penetrate infrared light；Gas chamber provides transmission channel for infrared light, provides the space of gas Yu infrared light reaction, and gas disengaging gas chamber is simultaneously inhaled
Receive infrared light；Optical filter is for filtering out the characteristic absorption wavelength of object gas；Unencapsulated infrared detector is for visiting
Survey the infrared light after object gas absorbs.
2. a kind of integrated infrared gas sensor based on MEMS according to claim 1, which is characterized in that described
One end of PCB opens up fluted, and the unencapsulated infrared detector is embedded in the groove, and the optical filter is arranged in institute
It states on unencapsulated infrared detector.
3. a kind of integrated infrared gas sensor based on MEMS according to claim 1, which is characterized in that the gas
The optical filter is provided between the bottom and top of room housing, entire gas chamber is divided into two independent chambers by the optical filter
Body.
4. a kind of integrated infrared gas sensor based on MEMS according to claim 1, which is characterized in that the filter
Mating plate is integrated on the chip of unencapsulated infrared detector, and the unencapsulated infrared detector and the light hole phase
Connection.
5. a kind of integrated infrared gas sensor based on MEMS according to claim 1, which is characterized in that the filter
Mating plate is integrated in the unencapsulated MEMS infrared light supply, and the unencapsulated MEMS infrared light supply and the light well
It is connected.
6. a kind of integrated infrared gas sensor based on MEMS according to claim 4 or 5, which is characterized in that institute
Stating optical filter is Meta Materials infrared light absorbing layer.
7. a kind of integrated infrared gas sensor based on MEMS according to claim 6, which is characterized in that described super
The material of material infrared light absorbing layer is gold or copper.
8. a kind of integrated infrared gas sensor based on MEMS according to claim 6, which is characterized in that described super
Several cross metamaterial structure units are provided in material infrared light absorbing layer.
9. -5,7,8 any a kind of integrated infrared gas sensor based on MEMS according to claim 1, feature
It is, is provided with reflecting surface on the inner wall arranged on left and right sides face of the gas chamber shell, the above and below of the gas chamber shell is all provided with
It is equipped with reflexed light film.
10. a kind of integrated infrared gas sensor based on MEMS according to claim 9, which is characterized in that described
Reflexed light film is one of gold thin film, aluminium film, bragg reflection film.
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| CN201910523909.8A CN110132877B (en) | 2019-06-17 | 2019-06-17 | Integrated infrared gas sensor based on MEMS |
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| CN201910523909.8A CN110132877B (en) | 2019-06-17 | 2019-06-17 | Integrated infrared gas sensor based on MEMS |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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