CN112071958A - 一种新型p型晶硅电池发射极接触钝化制备工艺 - Google Patents
一种新型p型晶硅电池发射极接触钝化制备工艺 Download PDFInfo
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Abstract
本发明涉及太阳能电池生产领域，一种新型p型晶硅电池发射极接触钝化制备工艺，按照清洗制绒、扩散制结、去PSG及背刻蚀、高温氧化、正面减反膜、背面钝化及减反膜、正面激光开槽、发射极重掺杂、去PSG、背面激光开槽、丝网印刷的工艺进行，其中，发射极重掺杂过程中，采用热扩散的方式，通入300sccm的N2、500‑1000sccm的N2‑POCl3、400‑900sccm的O2，安均匀的速率从780℃提升到820℃，时间为100‑200s，维持820℃，通入1‑3slm的N2，时间1‑2min。通过钝化发射极，减少金属化区域复合电流，提升电池转换效率0.3‑0.5%。
Description
技术领域
本发明涉及太阳能电池生产领域，特别是涉及p型晶硅电池发射极制备领域。
背景技术
当前，单晶PERC电池转换效率的提升，主要基于非金属区域钝化膜层的优化、激光掺杂技术的应用等，当这些技术应用成熟后，PERC电池转换效率的提升出现瓶颈。
发明内容
本发明所要解决的技术问题是：如何克服PERC电池转换效率的提升出现瓶颈，进一步提升电池转换效率。
本发明所要解决的技术问题是：一种新型p型晶硅电池发射极接触钝化制备工艺，按照清洗制绒、扩散制结、去PSG及背刻蚀、高温氧化、正面减反膜、背面钝化及减反膜、正面激光开槽、发射极重掺杂、去PSG、背面激光开槽、丝网印刷的工艺进行，其中，发射极重掺杂过程中，采用热扩散的方式，通入300sccm的N2、500-1000sccm的N2-POCl3、400-900sccm的O2，安均匀的速率从780℃提升到820℃，时间为100-200s，维持820℃，通入1-3slm的N2，时间1-2min。
正面激光开槽时，开槽使用激光波长为532nm的绿光，激光光斑大小为120um，最大功率40W，打标能量为最大功率的90-100%，调制频率为200-240Khz，雕刻速度为27000mm/min。
去PSG步骤中，使用原液浓度为体积百分比为49%HF，与H2O配置成1%体积浓度的混合液，反应时间为0.5-2min。
本发明的有益效果是：本发明将氮化硅膜作为掩膜层，采用热扩散方式，在发射极制备磷重掺层，不仅降低金属区接触电阻，同时钝化了发射极。通过钝化发射极，减少金属化区域复合电流，提升电池转换效率0.3-0.5%。
附图说明
图1是本发明的完成后电池片结构示意图。
具体实施方式
本发明提出一种新型晶硅电池发射极接触钝化制备工艺，如图1，通过在发射极制备磷重掺层，不仅降低金属区接触电阻，同时钝化发射极。具体的制备工艺如下：
1. 清洗制绒。制绒使用碱制绒，刻蚀量控制在0.4-0.6g，反射率7%-12%。
2. 扩散制结。
3. 去PSG及背刻蚀。清洗边缘与背面部分BSG，使用碱刻蚀，刻蚀量控制在0.14-0.17g，反射率35%-45%。
4. 高温氧化。
5. 正面减反膜。在管式PECVD中制备氮化硅，折射率为2.03-2.10，膜厚为75-80nm的氮化硅膜。
6. 背面钝化及减反膜。
7. 正面激光开槽。开槽使用激光波长为532nm的绿光，激光光斑大小为120um，最大功率40W，打标能量为最大功率的90-100%。调制频率为200-240Khz，雕刻速度为27000mm/min。
8. 发射极重掺杂。采用热扩散的方式。通入300sccm的N2、500-1000sccm的N2-POCl3、400-900sccm的O2，按照均匀的速率从780℃提升到820℃，时间为100-200s；维持820℃，通入1-3slm的N2，时间1-2min。
9. 去PSG。使用原液浓度为49%HF，与H2O配置成1%体积浓度的混合液，反应时间为0.5-2min。
10. 背面激光开槽。
11. 丝网印刷。
Claims (3)
1.一种新型p型晶硅电池发射极接触钝化制备工艺，其特征在于：按照清洗制绒、扩散制结、去PSG及背刻蚀、高温氧化、正面减反膜、背面钝化及减反膜、正面激光开槽、发射极重掺杂、去PSG、背面激光开槽、丝网印刷的工艺进行，其中，发射极重掺杂过程中，采用热扩散的方式，通入300sccm的N2、500-1000sccm的N2-POCl3、400-900sccm的O2，安均匀的速率从780℃提升到820℃，时间为100-200s，维持820℃，通入1-3slm的N2，时间1-2min。
2.根据权利要求1所述的一种新型p型晶硅电池发射极接触钝化制备工艺，其特征在于：正面激光开槽时，开槽使用激光波长为532nm的绿光，激光光斑大小为120um，最大功率40W，打标能量为最大功率的90-100%，调制频率为200-240Khz，雕刻速度为27000mm/min。
3.根据权利要求1所述的一种新型p型晶硅电池发射极接触钝化制备工艺，其特征在于：去PSG步骤中，使用原液浓度为体积百分比为49%HF，与H2O配置成1%体积浓度的混合液，反应时间为0.5-2min。
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533871A (zh) * | 2009-04-01 | 2009-09-16 | 常州天合光能有限公司 | 晶体硅太阳电池选择性扩散工艺 |
| KR20150107070A (ko) * | 2014-03-13 | 2015-09-23 | 현대중공업 주식회사 | 태양전지의 선택 에미터 구조 형성방법 및 이에 의한 태양전지 |
| CN106784053A (zh) * | 2017-02-20 | 2017-05-31 | 泰州乐叶光伏科技有限公司 | 一种n型选择性发射极双面电池及其加工方法 |
| CN107221568A (zh) * | 2017-07-10 | 2017-09-29 | 苏州腾晖光伏技术有限公司 | 一种选择发射极双面perc电池的制备方法 |
| CN107507872A (zh) * | 2017-08-14 | 2017-12-22 | 江苏科来材料科技有限公司 | 一种双面掺杂的高效太阳能电池及其制作方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533871A (zh) * | 2009-04-01 | 2009-09-16 | 常州天合光能有限公司 | 晶体硅太阳电池选择性扩散工艺 |
| KR20150107070A (ko) * | 2014-03-13 | 2015-09-23 | 현대중공업 주식회사 | 태양전지의 선택 에미터 구조 형성방법 및 이에 의한 태양전지 |
| CN106784053A (zh) * | 2017-02-20 | 2017-05-31 | 泰州乐叶光伏科技有限公司 | 一种n型选择性发射极双面电池及其加工方法 |
| CN107221568A (zh) * | 2017-07-10 | 2017-09-29 | 苏州腾晖光伏技术有限公司 | 一种选择发射极双面perc电池的制备方法 |
| CN107507872A (zh) * | 2017-08-14 | 2017-12-22 | 江苏科来材料科技有限公司 | 一种双面掺杂的高效太阳能电池及其制作方法 |
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