CN112054012A - 包括直流和交流电势端子的子模块和包括该子模块的布置 - Google Patents
包括直流和交流电势端子的子模块和包括该子模块的布置 Download PDFInfo
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Abstract
本文提出了包括直流和交流电势端子的子模块和包括该子模块的布置,该子模块包括:开关装置,其包括基板,该基板有第一和第二直流电势导体轨迹,其有布置在其上的第一和第二直流电势连接区域,其中,直流电势连接区域优选地是被布置成彼此直接相邻,且基板还包括交流电势导体轨迹和处在其上的交流电势连接区域;且开关装置包括多个功率半导体组件;且开关装置包括内部连接装置,其中第一和第二直流电势连接区域以及还有交流电势连接区域被构造且设置成通过夹紧装置被分别直接地、在极性上正确地并导电地连接到不与子模块相关联的外部直流和交流电势连接元件,由此基板在直流电势连接区域且还有交流电势连接区域的区段中被同时按压到支承装置上。
Description
技术领域
本发明描述了一种功率电子子模块,所述功率电子子模块包括:具有基板的开关装置,所述基板具有第一直流电势导体轨迹(first DC potential conductor track)、第二直流电势导体轨迹以及还有交流电势导体轨迹(AC potential conductor track);并且所述开关装置包括多个功率半导体组件;并且所述开关装置包括内部连接装置。本发明还描述了一种布置,所述布置包括:这种子模块或多个这种子模块;和用于这种子模块的支承装置,所述支承装置特别可以被构造成冷却装置。
背景技术
DE 10 2017 115 883A1作为现有技术公开了一种子模块和包括该子模块的布置,其中该子模块具有开关装置,该开关装置包括基板和布置在该基板上的导体轨迹。该子模块具有第一直流电压导体轨迹(first DC voltage conductor track)和第二直流电压导体轨迹以及与所述第一直流电压导体轨迹和第二直流电压导体轨迹导电连接的第一直流电压端子元件(first DC voltage terminal element)和第二直流电压端子元件,并且还包括交流电势导体轨迹(AC potential conductor track)以及与所述交流电势导体轨迹导电连接的交流电势端子元件(AC potential terminal element)。该子模块还具有绝缘材料成型体,所述绝缘材料成型体以框架状方式(framelike manner)封围开关装置。在这种情况下,第一直流电压端子元件通过第一接触区段支承在绝缘材料成型体的第一支承体上;交流电势端子元件通过第二接触区段支承在绝缘材料成型体的第二支承体上。第一夹紧装置被构造成以电绝缘的方式延伸穿过第一支承体的第一切口,并在第一直流电压端子元件与所配的第一直流电压连接元件之间形成导电夹紧连接,并且第二夹紧装置被构造成以电绝缘的方式延伸穿过第二支承体的第二切口,并在交流电势端子元件与所配的交流电势连接元件之间形成导电夹紧连接。
借助于所提及的现有技术的知识,本发明是基于提出一种功率电子子模块和一种包括该功率电子子模块的布置的目标,其中,特别有利地是构造与直流电势连接元件和交流电势连接元件的相应连接。
发明内容
根据本发明,这种目的通过一种功率电子子模块来实现,所述功率电子子模块包括:包括基板的开关装置,所述基板具有第一直流电势导体轨迹,其中在所述第一直流电势导体轨迹上布置有第一直流电势连接区域,和第二直流电势导体轨迹,其中在所述第二直流电势导体轨迹上布置有第二直流电势连接区域,其中,所述直流电势连接区域优选地是被布置成彼此直接相邻,并且所述基板还包括交流电势导体轨迹和处在所述交流电势导体轨迹上的交流电势连接区域;并且所述开关装置包括多个功率半导体组件;并且所述开关装置包括内部连接装置,其中所述第一直流电势连接区域和所述第二直流电势连接区域以及还有所述交流电势连接区域被构造且设置成通过夹紧装置被分别直接地并且在极性上正确地并导电地连接到不与所述子模块相关联的外部直流电势连接元件和交流电势连接元件,由此所述基板在所述直流电势连接区域以及还有所述交流电势连接区域的区段中被同时按压到支承装置上。
特别有利的是,绝缘材料成型体至少部分地以框架状方式封围所述开关装置。
优选地是,所述基板具有绝缘材料体或绝缘材料层,在所述绝缘材料体或所述绝缘材料层上以材料结合的方式布置所述第一直流电势导体轨迹和所述第二直流电势导体轨迹以及还有所述交流电势导体轨迹。在这种情况下,优选的是,所述绝缘材料体或所述绝缘材料层以材料结合的方式布置在金属体或金属层上。因而,形成具有中心绝缘层的至少三层的基板。
优选地是,所述内部连接装置可以被构造成结合连接,特别是引线结合连接,或者被构造成膜堆叠,所述膜堆叠在不同情况中由一个或多个至少部分地被固有地结构化并交替地布置的电绝缘的膜和导电的膜组成。
优选的是,所述基板具有第一连续切口,其中,所述交流电势连接区域被布置成与所述第一切口相邻或以封围所述第一切口的方式布置。
特别优选的是,所述基板具有第二连续切口,其中,所述第一直流电势连接区域和所述第二直流电势连接区域被布置成与所述第二切口相邻,或者所述第二切口被布置在所述第一直流电势连接区域和所述第二直流电势连接区域之间。
有利的是,所述子模块具有包括压力元件的压力装置,所述压力元件具有尺寸稳定的压力体和多个刚性的或弹性的压力元件。刚性压力元件特别适合用于将压力直接引导到所述基板上,而弹性压力元件特别适合于将压力引导到半导体组件上。为此,可以有利的是,所述基板具有与所述压力装置的切口对准的居中布置的第三连续切口,其中,这些切口被构造且设置成使得压力引入元件延伸穿过这些切口并通过所述压力装置将所述基板按压到所述支承装置上。在这种情况下,特别优选的是,所述第一切口、所述第二切口和所述第三切口被布置在优选地是限定所述基板的镜像轴线的线上。
此外,所述目的还通过具有上述功率电子子模块和支承装置的布置来实现,所述支承装置特别被构造成冷却装置。在这种情况下,第一夹紧装置和第二夹紧装置每个均被锚固在所述支承装置中,其中,通过所述第一夹紧装置在所述交流电势连接区域和所述交流电势连接元件之间形成导电的力锁定连接,并且其中,通过所述第二夹紧装置在所述第一直流电势连接区域和所述第一直流电势连接元件之间以及同时在所述第二直流电势连接区域和所述第二直流电势连接元件之间形成导电的力锁定连接。因而,重要的是,用于外部端子的相应的连接区域是所述基板的一体部分,其中在所述基板上还布置有所述功率半导体组件。
特别优选的是,相应的夹紧装置被构造成夹紧元件,优选地是被构造成螺钉,并且被构造成所述支承装置的夹紧配对元件,优选地是被构造成具有内螺纹的切口或盲孔。
此外,优选的是,相应的夹紧装置具有绝缘材料套管,所述夹紧元件穿过所述绝缘材料套管延伸。作为上述的替代方案,所述夹紧元件本身可以以电绝缘的方式构造,例如被构造成塑料螺钉。
此外,可以有利的是,多个子模块优选地是与共同的整体壳体一起形成功率模块。
当然,除非本身被排除或明确排除,否则以单数形式提及的特征,特别是相应的连接区域和夹紧装置也可以在根据本发明的子模块或包括所述子模块的布置中存在多个。
不用说,本发明的各种构造可以单独实现或以任何期望的组合实现,以便实现改进。特别地是,在不脱离本发明的范围的情况下,无论是在子模块的上下文中还是在包含该子模块的布置中描述的,在上面和下面提到和说明的特征都不仅可以在所指示的组合中使用,而且可以在其它组合中使用或可以自行使用。
附图说明
通过下面对如在图1至图9中示意性示出的本发明的示例性实施例或其相应部分的描述,本发明的进一步说明、有利细节和特征是显而易见的。
图1示出了根据现有技术的布置中的功率电子子模块。
图2示出了根据本发明的子模块的平面图。
图3至图6各自示出了根据本发明的功率电子子模块部分地在根据本发明的布置中的变型的侧剖视图。
图7示出了根据本发明的另一子模块的平面图。
图8示出了根据本发明的功率电子子模块的三维视图。
图9示出了根据本发明的用于多电平变换器的子模块的平面图。
具体实施方式
图1示出了根据现有技术的布置1的一部分的构造的侧剖视图,该布置1包括同样根据现有技术的功率电子子模块2。在这种情况下,子模块2被布置在液体冷却装置3上。这种整体布置1形成了所谓的半桥电路。
为了相对于液体冷却装置3进行电绝缘并且为了与所述液体冷却装置3热耦合,开关装置具有基板4,基板4具有被构造成陶瓷体的绝缘材料体40。所述陶瓷体40在其背对液体冷却装置3的一侧上具有多个导体轨迹42,所述导体轨迹在开关装置的运行期间具有不同的电势。
在与绝缘材料体40一起形成开关装置的基板4的其中至少一个所述导体轨迹42上,功率半导体组件50通过本领域的常规实践以电路兼容的方式(circuit-conformingmanner)布置并连接。这里的内部连接装置被构造成膜复合件52(film composite),该膜复合件由交替堆叠的导电膜和电绝缘膜组成,所述膜复合件在现有技术中是常规的。
为了进行外部连接,该变换器模块2具有两个直流电势端子元件680、682,这些直流电势端子元件分别导电地连接到载有直流电势(DC potential)的直流电势导体轨迹42中的一个直流电势导体轨迹。在此,在不限制一般性的情况下,该连接以本领域中常规的方式被构造成钎焊连接。
所述直流电势端子元件680、682用于连接到所配的直流电势连接元件60、62,这些直流电势连接元件优选地是连接到电容器装置。
在通过夹紧装置7形成于直流电势端子元件680、682与直流电势连接元件60、62之间的连接的区域中,第一直流电势端子元件680和第二直流电势端子元件682形成堆叠,其中,绝缘装置布置在所述两个直流电势端子元件680、682之间,但是此处未明确示出。
第一直流电势端子元件680支承在变换器模块2的壳体20的支承表面240上,所述壳体仅被部分地示出。在这种构造中,所述壳体20仅被构造成部分壳体,也就是说没有完全封围开关装置,这是可能的并且也是本领域的常规实践。
在此,变换器模块2的壳体20由耐高温的塑料(在此为聚苯硫醚)形成,该塑料另外具有高抗弯刚度。直流电势端子元件680、682被构造成厚度为700μm的薄金属板,这里更确切地说是铜板或表面涂层的铜板。直流电势端子元件680、682之间的绝缘装置由厚度为100μm的、具有高电击穿强度的塑料形成,这里是由乙烯四氟乙烯共聚物或由液晶聚合物形成的。
如上所述,在直流电势端子元件680、682与直流电势连接元件60、62之间的连接的区域中,第一直流电势端子元件680支承在壳体20的支承表面240上并且具有切口684。
第二直流电势端子元件682相对于第一直流电势端子元件向后设置,由此,在从基板开始的侧视图中,第二直流电势端子元件的相对于第二直流电势连接元件62的端子区域位于切口684的这一侧上。
直流电势端子元件680、682的相应的端子区域位于分别背对冷却装置3的侧面上,而直流电势连接元件60、62的相应的端子区域各自位于分别面对冷却元件3的侧面上。
壳体20在其第一支承表面240的区域中具有第一切口204,该第一切口在z方向上与第一直流电势端子元件680的切口684对准。在这些以及与之对准的其它切口684、620中(包括交流电势连接元件62的切口),布置有绝缘材料套管74,该绝缘材料套管用于相应电势的电绝缘,包括气隙和可能需要的爬电路径(creepage paths)。在所述套管74中布置有螺钉70,所述螺钉与在此被实施为碟形弹簧的弹簧装置72一起在第一直流电势端子元件680和第一直流电势连接元件60之间以及同时还在第二直流电势端子元件682和第二直流电势连接元件62之间形成导电的力锁定连接。为此,将螺钉70拧入到盲孔32中,也就是说拧入到冷却装置3的切口中,所述盲孔设置有内螺纹,由此将第一夹紧装置7锚固在冷却装置中。
图2示出了根据本发明的子模块2的平面图。该图示出了基板4的绝缘材料体40,该绝缘材料体在此是平面的陶瓷体,其优选地是并且仅示例性地是由亚硝酸铝形成的。氧化铝或亚硝酸硅也是非常合适的替代品。三个导体轨迹42、43、44以材料结合的方式布置在陶瓷体40上——第一直流电势导体轨迹42(其在运行期间载有第一、正直流电势),第二直流电势导体轨迹43(其在运行期间载有第二、负直流电势),以及交流电势导体轨迹44(其在运行期间载有交流电势)。
四个功率半导体组件50(这里是碳化硅场效应晶体管)被布置在第一直流电势导体轨迹42上并且与该第一直流电势导体轨迹导电地连接。所述功率半导体组件50形成第一功率开关。可替代地是,功率开关也可以通过基于硅的功率半导体组件来形成,在这种情况下,例如通过具有反并联二极管的晶体管来形成。这些功率半导体组件50通过形成内部连接装置的引线结合连接54而连接到交流电势导体轨迹43。继而,将相同类型的四个功率半导体组件52布置在所述交流电势导体轨迹上并与其导电地连接。这些功率半导体组件52同样通过引线结合连接54连接到第二直流电势导体轨迹44。在这里和下文中,为了清楚起见,省略了用于载有控制电势的控制导体轨迹以及与功率半导体组件的连接的图示。总体上,由此形成了本领域常规的半桥电路。
在基板2的第一纵向端处,交流电势连接区域436被布置在交流电势导体轨迹43上。第一连续切口400延伸穿过所述交流电势连接区域436、交流电势导体轨迹43以及绝缘材料体40。
此外,示出了由导体轨迹的表面的区段形成的相应的端子区域。第一直流电势连接区域426在基板2的第二纵向端处被布置在第一直流电势导体轨迹42上。第二直流电势连接区域446被布置成与处在基板4的第二纵向端处的第二直流电势导体轨迹44上的第一直流电势连接区域426直接相邻。延伸穿过绝缘材料体40的第二切口402被布置在这些直流电势连接区域426、446之间。
第一切口和第二切口400、402被布置在基板4(更确切地说,是基板4的绝缘材料体40)的假想镜像线B上。
图3至图6示出了根据本发明的功率电子子模块2部分地在根据本发明的布置中的变型的侧剖视图,其中截面线各自沿着线A-A延伸,与图2类似。这种类似涉及导体轨迹的位置、半导体组件的位置以及切口的位置;就基板的材料及基板的构造而言,不一定必需要与基板的技术构造有关。
图3示出了(部分地以分解图示出了)根据本发明的布置1的一部分,其中,在构造方面,包括材料方面,这里的基板4都对应于根据图2的基板。该基板4被布置在液体冷却装置3上,这里的液体冷却装置形成支承装置。
再一次,将与关于图2所述的相同功率半导体组件50布置在基板4上。然而,这里的内部连接装置不被构造成引线结合连接,而是被构造成彼此以材料结合方式连接的膜堆叠52。该膜堆叠52在现有技术中是常规的,在此由两个导电膜组成,此外,这两个导电膜可以以结构化方式构造,并且在两个导电膜之间布置有电绝缘膜。
在基板4的背对水冷却装置3的一侧上,其中基板也在该区域中支承在水冷却装置3上,交流电势连接区域436被布置和构造成交流电势导体轨迹43的表面区域。整个基板4在该区域内都具有第一连续切口400。此外,该布置具有不是子模块2的一部分的交流电势连接元件60。所述交流电势连接元件60用于连接到电机,通常是被构造成通过子模块2驱动的电动机的电机。交流电势连接元件60具有与基板4的切口400对准的连续切口600。
以对应于这两个切口400、600并与这两个切口对准的方式,具有内螺纹的盲孔32被布置在水冷却装置3中并且形成夹紧装置7的夹紧配对元件。
夹紧装置7的夹紧元件被构造成螺钉70,该螺钉穿过交流电势连接元件600和基板400的切口延伸到盲孔32中。由于夹紧装置7的这种构造和应用,所以交流电势连接元件60的端子区域606被按压到交流电势连接区域436上,并且交流电势连接元件60和交流电势导体轨迹43之间形成导电接触。布置了绝缘材料套管74,以在金属螺钉70和交流电势连接元件60以及还有交流电势导体轨迹43之间进行电绝缘。为了改善压力的引入,这里弹簧元件被另外布置在螺钉头部和绝缘材料套管74之间,该弹簧元件被构造成供螺钉701穿过延伸的碟形弹簧72。
通过夹紧装置7,将整个基板4按压到液体冷却装置3上,由此在基板4和液体冷却装置3之间形成热链接。以本领域常规实践的方式,也可以在基板4和液体冷却装置3之间布置导热层,特别是导热膏。
图4示出了根据本发明的布置1的构造,该构造类似于图3,但是这里已经省略了支承装置的图示。然而,这里的基板4被构造成:金属体48,该金属体优选地是由铝构成的;绝缘材料层41,该绝缘材料层以材料结合的方式布置在金属体上,该绝缘材料层在这里被构造为绝缘材料膜;以及导体轨迹43,该导体轨迹则以材料结合方式布置在该绝缘材料层上,该导体轨迹优选地是由铝或铜形成的。所有其它组件和功能都与根据图3的组件和功能相同。
图5示出了根据本发明的布置1,其中子模块2的基板4根据图3的基板构造。功率半导体组件50和内部连接装置52在这里也是相同的。该图示另外示出了直流电势连接元件,这里是第一直流电势连接元件60,其在运行期间载有负电势。
这里的子模块2具有压力装置9,该压力装置基本上是本领域中常规的,并且就其本身而言,具有由尺寸稳定的压力体920和多个弹性压力元件922组成的压力元件92。该压力装置92通过压力引入元件90而受到压力。在不限制一般性的情况下,这里将压力沿中心施加到压力装置9上。压力装置9的压力元件922按压到连接装置52的与功率半导体组件50对准的区段上。因此,为了进行力锁定连接,基板4在产生最多热的那些部位处被按压到液体冷却装置3上。
压力通过压力引入元件90来引入,这种压力引入通过两个夹紧装置7来实现,此外,所述夹紧装置还用于将交流电势连接区域436处的交流电势导体轨迹43与交流电势连接元件60的所配的端子区域进行相应的力锁定连接,以及将第一直流电势连接区域426处的第一直流电势导体轨迹42与第一直流电势连接元件64的所配的端子区域进行相应的力锁定连接。此外,如上文已经所述的那样构造这些相应的连接。
图6示出了根据本发明的布置1,其包括液体冷却装置3、布置在该液体冷却装置上的根据本发明的子模块2,以及交流电势连接元件60和第一直流电势连接元件64。
这里的基板4由陶瓷绝缘材料体40和金属层49构成,金属层优选地是由铝或铜形成的,该金属层在所述绝缘材料体的面对液体冷却装置3的一侧上以材料结合的方式连接到绝缘材料体40。在背对液体冷却装置3的一侧上,以材料结合的方式布置有多个导体轨迹42、43。该图示再次示出了三个功率半导体组件50,这里是处于交流电势导体轨迹43上的碳化硅场效应晶体管。交流电势导体轨迹43在交流电势端子区域436的关于交流电势连接元件60的区域中具有与导体轨迹相关联的衬里438。该图示还示出了第一直流电势导体轨迹42和第一直流电势连接区域426在一起。
该图示还示出了压力装置9,该压力装置基本上与根据图5的压力装置相同,但是具有扩展功能。压力元件92具有附加的压力体922,该附加的压力体分别按压到交流电势连接元件60以及还有直流电势连接元件64的背对基板4的一侧上。该压力通过压力引入元件90来引入,该压力引入元件不仅在压力元件92上施加中心压力,而且还以与导体轨迹的相应的连接区域426、436以及所配的连接元件对准的方式在这些连接区域上施加压力。
夹紧装置本身在此未被示出,并且未被布置成紧邻所示出的相应的连接区域。
图7示出了根据本发明的另一子模块2的平面图。该子模块基本上与根据图2的子模块相同,但是不具有作为内部连接装置的引线结合连接54。而是,该基板4具有已经被描述为内部连接装置的膜堆叠52。然而,该膜堆叠52仅以虚线并且以透明的方式示出,因而仅以指示的方式示出。该图示示出了基板4的中心的、第三连续切口404,该切口的功能将结合下面的图8进行描述。所有连续的切口400、402、404都被布置在限定基板4的基本区域(即绝缘材料体40的基本区域)的镜像轴线的线上。
图8示出了根据本发明的功率电子子模块2的三维图示。基板4在功能上与根据图7的基板相同,但是基板在纵向端处具有几何偏差。基板4几乎被绝缘材料成型体20以框架状方式完全封围起来,所述成型体因而形成子模块2的部分壳体。
此外,子模块2具有压力装置9,该压力装置包括压力元件92,该压力元件92具有尺寸稳定的压力体920和多个不可见的刚性压力元件,这些刚性压力元件按压到基板4的、没有布置功率半导体组件的区域上。如在图7中已经示出的那样,基板4具有与压力装置的切口对准的第三、中心布置的连续切口。这些切口被构造且设置成使得压力引入元件90(该压力引入元件在这里被构造为具有碟形弹簧的螺钉)延伸穿过这些切口,并且通过压力装置9将基板4按压到支承装置上。
图9示出了根据本发明的用于多电平变换器的子模块2的平面图。在此,第一直流电势导体轨迹42不被构造用以载有负电势,而是载有中性电势。
在第二直流电势导体轨迹44上布置了三个功率半导体组件50,它们也被再次构造为碳化硅场效应晶体管,但不限制其一般性,这里的第二直流电势导体轨迹44在运行期间载有正电势。在三级电路中,这些功率半导体组件50形成上支路的上部功率开关。另外三个功率半导体组件50(也是碳化硅场效应晶体管)以及还有功率二极管51被布置在另一个导体轨迹46上。这三个碳化硅场效应晶体管形成了该三级电路的上支路的下部功率开关,而功率二极管51形成将上部开关之间的电势连接到中性电势的上部二极管。
交流电势连接区域436基本上与根据图7中的布置和构造相同。两个直流电势连接区域426、446同样与根据图7中的布置和构造相同。中心切口404同样在功能上根据图7中的进行布置和构造。
Claims (14)
1.一种功率电子子模块(2),所述功率电子子模块包括:包括基板(4)的开关装置,所述基板具有第一直流电势导体轨迹(42),其中在所述第一直流电势导体轨迹上布置有第一直流电势连接区域(426),和第二直流电势导体轨迹(44),其中在所述第二直流电势导体轨迹上布置有第二直流电势连接区域(446),其中,所述直流电势连接区域(426、446)优选地是被布置成彼此直接相邻,并且所述基板还包括交流电势导体轨迹(43)和处在所述交流电势导体轨迹上的交流电势连接区域(436);并且所述开关装置包括多个功率半导体组件(50);并且所述开关装置包括内部连接装置(52、54),
其中,所述第一和第二直流电势连接区域(426、446)以及还有所述交流电势连接区域(436)被构造且设置成通过夹紧装置(7)被分别直接地并且在极性上正确地并且导电地连接到不与所述子模块(2)相关联的外部直流电势连接元件(60)和外部交流电势连接元件(64),由此所述基板(4)在所述直流电势连接区域(426、446)以及还有所述交流电势连接区域(436)的区段中被同时按压到支承装置(3)上。
2.根据权利要求1所述的子模块,其中
绝缘材料成型体(20)至少部分地以框架状方式封围所述开关装置。
3.根据权利要求1-2中的任一项所述的子模块,其中
所述基板(4)具有绝缘材料体(40)或绝缘材料层(41),在所述绝缘材料体或所述绝缘材料层上以材料结合的方式布置所述第一和第二直流电势导体轨迹(42、44)以及还有所述交流电势导体轨迹(43)。
4.根据权利要求3所述的子模块,其中
所述绝缘材料体(40)或所述绝缘材料层(41)以材料结合的方式被布置在金属体(48)或金属层(49)上。
5.根据权利要求1-2中的任一项所述的子模块,其中
所述内部连接装置被构造成结合连接(54),特别是引线结合连接(54),或者被构造成膜堆叠(52),所述膜堆叠在不同情况中由一个或多个至少部分地被固有地结构化并交替地布置的电绝缘的膜和导电的膜组成。
6.根据权利要求1-2中的任一项所述的子模块,其中
所述基板(4)具有第一连续切口(400),其中,所述交流电势连接区域(436)被布置成与所述第一切口(400)相邻或以封围所述第一切口的方式布置。
7.根据权利要求1-2中的任一项所述的子模块,其中
所述基板(4)具有第二连续切口(402),其中,所述第一和第二直流电势连接区域(426、446)被布置成与所述第二切口(402)相邻,或者其中,所述第二切口(402)被布置在所述第一和第二直流电势连接区域(426、446)之间。
8.根据权利要求1-2中的任一项所述的子模块,其中
所述子模块(2)具有包括压力元件(92)的压力装置(9),所述压力元件具有尺寸稳定的压力体(920)和多个刚性的或弹性的压力元件(922)。
9.根据权利要求8所述的子模块,其中
所述基板(4)具有与所述压力装置(9)的切口对准的居中布置的第三连续切口(404),其中,这些切口(404)被构造且设置成使得压力引入元件(90)延伸穿过这些切口并通过所述压力装置(9)将所述基板(4)按压到所述支承装置(3)上。
10.根据权利要求9所述的子模块,其中
所述第一、第二和第三切口(400、402、404)被布置在优选地是限定所述基板(4)的镜像轴线的线上。
11.一种具有根据上述权利要求中的任一项所述的功率电子子模块(2)的布置(1),所述布置包括支承装置(3),所述支承装置特别是被构造成冷却装置,所述布置包括第一和第二夹紧装置(7),所述第一和第二夹紧装置(7)每个均被锚固在所述支承装置(3)中,其中,通过所述第一夹紧装置(7)在所述交流电势连接区域(436)和所述交流电势连接元件(60)之间形成导电的力锁定连接,并且其中,通过所述第二夹紧装置(7)在所述第一直流电势连接区域(426)和所述第一直流电势连接元件(64)之间以及同时在所述第二直流电势连接区域(446)和所述第二直流电势连接元件之间形成导电的力锁定连接。
12.根据权利要求11所述的布置,其中
相应的所述夹紧装置(7)被构造成夹紧元件,优选地是被构造成螺钉(70),并且被构造成所述支承装置(3)的夹紧配对元件,优选地是被构造成具有内螺纹的切口(32)。
13.根据权利要求11或12所述的布置,其中
相应的所述夹紧装置(7)具有绝缘材料套管(74),所述夹紧元件(70)延伸穿过所述绝缘材料套管。
14.根据权利要求11至12中的任一项所述的布置,其中
多个子模块(2)优选地是与共同的整体壳体一起形成功率模块。
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