CN112002705A - Array substrate preparation method and array substrate - Google Patents
Array substrate preparation method and array substrate Download PDFInfo
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- CN112002705A CN112002705A CN202010794733.2A CN202010794733A CN112002705A CN 112002705 A CN112002705 A CN 112002705A CN 202010794733 A CN202010794733 A CN 202010794733A CN 112002705 A CN112002705 A CN 112002705A
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- 239000000758 substrate Substances 0.000 title claims abstract description 84
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 65
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 125000004429 atom Chemical group 0.000 claims abstract description 20
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 230000006698 induction Effects 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 178
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000005538 encapsulation Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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- H01L27/1222—
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- H01L27/127—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Abstract
The array substrate preparation method provided by the embodiment of the invention comprises the steps of preparing a semiconductor layer on a substrate by utilizing a physical vapor deposition process to serve as an active layer, placing the active layer in a magnetic control device, and providing a rotating magnetic field for the active layer by the magnetic control device; the magnetic moment directions of the metal atoms in all directions in the active layer are changed through the rotating magnetic field, so that the magnetic moment directions of the metal atoms and the oxygen atoms in all directions are the same, the stability of the active layer is improved, and the technical problem that the active layer of the existing array substrate is unstable is solved.
Description
Technical Field
The invention relates to the technical field of OLED display, in particular to a preparation method of an array substrate and the array substrate.
Background
The array substrate develops towards the direction of large size, high resolution, high refresh frequency and flexibility, in the existing array substrate, the active layer generated by magnetron sputtering has many defect states, and after annealing treatment, the active layer has an unstable phenomenon, so the existing array substrate has the technical problem of poor stability.
Disclosure of Invention
The embodiment of the invention provides an array substrate preparation method and an array substrate, which can solve the technical problem of poor stability of the existing array substrate.
The embodiment of the invention provides a preparation method of an array substrate, which is characterized by comprising the following steps:
providing a substrate base plate;
preparing a metal layer on the substrate by using a physical vapor deposition process, and forming a grid by using an etching process;
preparing an insulating layer on the grid electrode by using chemical vapor deposition, and then sequentially forming a grid insulating layer by using an etching process;
preparing a semiconductor layer on the gate insulating layer by using a physical vapor deposition process to serve as an active layer;
placing the substrate formed in the previous step in a rotating magnetic field, so that metal atoms of the active layer form a specific magnetic moment direction;
and preparing a subsequent functional film layer on the magnetized active layer to form the array substrate.
In the method for manufacturing an array substrate according to an embodiment of the present invention, in the step of providing a rotating magnetic field to the active layer, the method further includes:
and putting the active layer and the substrate into a magnetic field in a direction parallel to the magnetic induction lines.
In the method for manufacturing an array substrate according to an embodiment of the present invention, in the step of providing a rotating magnetic field to the active layer, the method further includes:
and putting the active layer into a magnetic field, wherein the rotating speed of the magnetic field ranges from 500 revolutions per minute to 2000 revolutions per minute.
In the method for manufacturing an array substrate according to an embodiment of the present invention, in the step of forming the active layer, the method further includes:
and preparing a semiconductor layer by utilizing a physical vapor deposition process to form the active layer, wherein the preparation material of the active layer is indium gallium zinc oxide.
In the method for manufacturing an array substrate according to an embodiment of the present invention, in the step of forming the active layer, the method further includes:
a semiconductor layer is prepared by utilizing a physical vapor deposition process and is used as an active layer, and the thickness of the active layer ranges from 300 angstroms to 700 angstroms.
In the array substrate manufacturing method provided by the embodiment of the invention, in the step of forming the gate insulating layer, the method further includes: preparing an insulating layer as a gate insulating layer by a plasma chemical vapor deposition process, wherein the thickness of the gate insulating layer ranges from 1500 angstroms to 4000 angstroms.
In the array substrate manufacturing method provided by the embodiment of the invention, in the step of forming the gate insulating layer, the method further includes: and preparing an insulating layer as a gate insulating layer by using a plasma chemical vapor deposition process, wherein the gate insulating layer is prepared from silicon oxide or a silicon oxide and silicon nitride composite layer.
In the method for manufacturing an array substrate provided by the embodiment of the present invention, in the step of forming the gate, the method further includes:
preparing an aluminum layer by using a physical vapor deposition process, and forming a grid electrode by using an etching process.
The embodiment of the invention provides an array substrate, which comprises a substrate, an array layer, a pixel definition layer, a light-emitting function layer and a packaging layer, wherein the array layer comprises:
a gate electrode disposed on the substrate base plate; and
a gate insulating layer disposed on the gate electrode; and
an active layer disposed on the gate insulating layer;
and the magnetic moment direction of the metal atoms in the active layer is the same as that of the oxygen atoms.
In the array substrate provided by the embodiment of the invention, the preparation material of the active layer is indium gallium zinc oxide.
Has the advantages that: the array substrate preparation method provided by the embodiment of the invention comprises the steps of preparing a semiconductor layer as an active layer by utilizing a physical vapor deposition process, and placing the active layer in a magnetic control device, wherein the magnetic control device provides a rotating magnetic field for the active layer; the magnetic moment directions of the metal atoms in all directions are changed through the rotating magnetic field, so that the magnetic moment directions of the metal atoms and the oxygen atoms in all directions are the same, the stability of the active layer is improved, and the technical problem that the active layer of the existing array substrate is unstable is solved.
Drawings
The technical solution and other advantages of the present invention will become apparent from the following detailed description of specific embodiments of the present invention, which is to be read in connection with the accompanying drawings.
Fig. 1 is a schematic flow chart illustrating a method for manufacturing an array substrate according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional view of an array substrate according to an embodiment of the invention;
fig. 3 is a schematic view of a magnetic control apparatus according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
As shown in fig. 1, the method for manufacturing an array substrate according to an embodiment of the present invention includes:
s1, providing a substrate 10;
s2, preparing a metal layer on the substrate base plate 10 by using a physical vapor deposition process, and forming a gate 205 by using an etching process;
s3, preparing an insulating layer on the grid 205 by chemical vapor deposition, and then forming a grid insulating layer 204 by an etching process in sequence;
s4, preparing a semiconductor layer as an active layer 203 on the gate insulating layer 204 by using a physical vapor deposition process;
s5, placing the substrate formed in the previous step in a rotating magnetic field to enable the metal atoms of the active layer 203 to form a specific magnetic moment direction;
and S6, preparing a subsequent functional film layer on the magnetized active layer 203 to form the array substrate.
In this embodiment, the array substrate manufacturing method includes preparing a semiconductor layer as an active layer 203 by using a physical vapor deposition process, and placing the active layer 203 in a magnetron apparatus, where the magnetron apparatus provides a rotating magnetic field to the active layer 203; the magnetic moment directions of the metal atoms in all directions are changed through the rotating magnetic field, so that the magnetic moment directions of the metal atoms and the oxygen atoms in all directions are the same, the stability of the active layer 203 is improved, and the technical problem that the active layer 203 is unstable in the existing array substrate is solved.
The gate electrode 205 and the gate insulating layer 204 may be formed by a photolithography process, which includes, but is not limited to, an etching process, and an exposure process, a developing process, and a photoresist stripping process.
In one embodiment, the step of providing a rotating magnetic field to the active layer 203 further comprises: and putting the active layer 203 and the substrate base plate 10 into a magnetic field in a direction parallel to the magnetic induction lines.
In one embodiment, the step of providing a rotating magnetic field to the active layer 203 further comprises: and placing the active layer 203 and the substrate base plate 10 into a magnetic field in a direction perpendicular to the magnetic induction lines.
In one embodiment, the step of providing a rotating magnetic field to the active layer 203 further comprises: the active layer 203 is placed in a magnetic field having a rotational speed in the range of 500 to 2000 revolutions per minute.
In one embodiment, in the step of forming the active layer 203, the method further includes: and preparing a semiconductor layer by utilizing a physical vapor deposition process to form the active layer 203, wherein the preparation material of the active layer 203 is indium gallium zinc oxide.
In one embodiment, in the step of forming the active layer 203, the method further includes: a semiconductor layer is prepared as the active layer 203 by using a physical vapor deposition process, and the thickness of the active layer 203 ranges from 300 angstroms to 700 angstroms.
Wherein, the active layer 203 also needs to be annealed.
In one embodiment, the step of forming the gate insulating layer 204 further includes: an insulating layer is prepared as the gate insulating layer 204 by a plasma chemical vapor deposition process, and the thickness of the gate insulating layer 204 ranges from 1500 angstroms to 4000 angstroms.
In one embodiment, the step of forming the gate insulating layer 204 further includes: an insulating layer is prepared by a plasma chemical vapor deposition process to serve as the gate insulating layer 204, and the gate insulating layer 204 is prepared from silicon oxide or a silicon oxide and silicon nitride composite layer.
The gate insulating layer 204 may be processed by an etching process to obtain the patterned gate insulating layer 204.
In an embodiment, the step of forming the gate 205 further includes: an aluminum layer is formed by a physical vapor deposition process, and the gate 205 is formed by an etching process.
In an embodiment, in the step of preparing the active layer 203, the method further includes: the prepared semiconductor layer is placed in a magnetic field, the magnetic field can be generated by a magnet, and the magnetic field can also be generated by an electrified lead.
Wherein the magnetic field is a rotating magnetic field.
When the magnetic field is a current conducting wire, the current conducting wire may be disposed on the outer surface of the bottom of the magnetron device, and the substrate 10 with the active layer 203 may be disposed on the inner surface of the bottom of the magnetron device.
In an embodiment, in the step of preparing the active layer 203, the method further includes: providing a magnetic control device, wherein the magnetic control device comprises a rotating part and a platform 1, the rotating part is used for driving the platform 1 to rotate, the platform 1 is used for placing the substrate 10 with the active layer 203, and the magnetic moment direction of metal atoms in all directions of the active layer 203 is the same as that of oxygen atoms through the rotating part.
Wherein, the rotating component can rotate along the clockwise direction and can also rotate along the anticlockwise direction.
Wherein the rotation speed of the rotating member is constant.
Wherein the rotating member has a rotating speed ranging from 500 rpm to 2000 rpm.
The surface of the platform 1 may be a shape matching with a panel, and may be a rectangle or other quadrangle.
The rotating part further comprises at least one connecting piece, at least one end of the connecting piece is fixed to the rotating part, at least the other end of the connecting piece is fixed to the lower portion of the platform 1, and the rotating part drives the platform 1 to rotate at a certain rotating speed through the fixing of the connecting piece.
The array substrate provided by the embodiment of the invention comprises a substrate 10, an array layer, a pixel definition layer 30, a light-emitting function layer 40 and a packaging layer 50, wherein the array layer comprises: a gate electrode 205 disposed on the substrate 10, a gate insulating layer 204 disposed on the gate electrode 205, and an active layer 203 disposed on the gate insulating layer 204, wherein a magnetic moment direction of a metal atom in the active layer 203 is the same as a magnetic moment direction of an oxygen atom.
In this embodiment, the array substrate preparation method includes a substrate 10, an array layer, a pixel defining layer 30, a light emitting function layer 40, and an encapsulation layer 50, where the array layer includes: a gate electrode 205 disposed on the substrate 10, a gate insulating layer 204 disposed on the gate electrode 205, and an active layer 203 disposed on the gate insulating layer 204, wherein a magnetic moment direction of a metal atom in the active layer 203 is the same as a magnetic moment direction of an oxygen atom; the magnetic moment directions of the metal atoms in all directions are changed through the rotating magnetic field, so that the magnetic moment directions of the metal atoms and the oxygen atoms in all directions are the same, the stability of the active layer 203 is improved, and the technical problem that the active layer 203 is unstable in the existing array substrate is solved.
In one embodiment, as shown in fig. 2, the array layer of the array substrate includes a substrate 10, a light shielding layer 201, a buffer layer 202, an active layer 203, a gate electrode 205, a gate insulating layer 204, an interlayer insulating layer 206, a passivation layer 207, a source drain layer 208, and a planarization layer 209, wherein a magnetic moment direction of a metal atom in the active layer 203 is the same as a magnetic moment direction of an oxygen atom.
The source/drain layer 208 includes a source electrode 2081 and a drain electrode 2082.
The array substrate further comprises a pixel defining layer 30 disposed on the planarization layer 209.
Wherein, the array substrate further comprises a light emitting function layer 40 disposed above the flat layer 209.
Wherein, the array substrate further comprises an encapsulation layer 50 disposed above the light emitting function layer 40.
The light emitting function layer 40 includes a first electrode layer 401, a light emitting layer 402, and a second electrode layer 403.
In one embodiment, the active layer 203 is made of indium gallium zinc oxide.
In one embodiment, the active layer 203 is made of indium gallium tin oxide.
In one embodiment, the active layer 203 is made of indium gallium zinc tin oxide.
In one embodiment, the gate 205 layer is made of aluminum or other metal materials.
In one embodiment, the material for preparing the gate insulating layer 204 may be silicon oxide or a composite layer of silicon nitride and silicon oxide.
The thickness of the gate insulating layer 204 is 1500 to 4000 angstroms.
Wherein the gate insulating layer 204 is disposed around the gate electrode 205, and the gate insulating layer 204 may be formed in one or more patterns.
In one embodiment, the active layer 203 may have a thickness of 300 to 700 angstroms.
Wherein, the active layer 203 or other metal semiconductor material is formed, and then annealing treatment is carried out to obtain the active layer 203 pattern.
As shown in fig. 3, an embodiment of the present invention provides a magnetic control apparatus, where the magnetic control apparatus includes a platform 1 and a magnetic field component disposed below the platform 1, an array substrate with an active layer 203 is disposed on the platform 1, and the array substrate includes a substrate 10, a gate electrode 205, a gate insulating layer 204, and an active layer 203, where the active layer 203 is disposed in a range of magnetic flux lines of the magnetic control apparatus.
The array substrate further comprises a source drain layer 208 arranged above the active layer 203, and the source drain layer 208 comprises a source electrode 2081 and a drain electrode 2082.
The array substrate further comprises a pixel defining layer 30 disposed on the planarization layer 209.
Wherein, the array substrate further comprises a light emitting function layer 40 disposed above the flat layer 209.
Wherein, the array substrate further comprises an encapsulation layer 50 disposed above the light emitting function layer 40.
The light emitting function layer 40 includes a first electrode layer 401, a light emitting layer 402, and a second electrode layer 403.
Wherein, the preparation material of the active layer 203 is indium gallium zinc oxide.
In one embodiment, the magnetic field component is a power-on wire.
In one embodiment, as shown in FIG. 3, the magnetic field component is a magnet having a positive pole and a negative pole.
The magnetic field may be generated using a magnet, or the magnetic field may be generated using an energized wire.
Wherein the magnetic field is a rotating magnetic field.
When the magnetic field is a current conducting wire, the current conducting wire may be disposed on the outer surface of the bottom of the magnetron device, and the substrate 10 with the active layer 203 may be disposed on the inner surface of the bottom of the magnetron device.
In an embodiment, the magnetron apparatus further includes a rotating component, the rotating component is configured to drive the platform 1 to rotate, the platform 1 is configured to place the substrate 10 with the active layer 203, and the magnetic moment direction of the metal atoms in each direction of the active layer 203 is the same as the magnetic moment direction of the oxygen atoms through the rotating component.
Wherein, the rotating component can rotate along the clockwise direction and can also rotate along the anticlockwise direction.
Wherein the rotation speed of the rotating member is constant.
Wherein the rotating member has a rotating speed ranging from 500 rpm to 2000 rpm.
The surface of the platform 1 may be a shape matching with a panel, and may be a rectangle or other quadrangle.
The rotating part further comprises at least one connecting piece, at least one end of the connecting piece is fixed to the rotating part, at least the other end of the connecting piece is fixed to the lower portion of the platform 1, and the rotating part drives the platform 1 to rotate at a certain rotating speed through the fixing of the connecting piece.
The array substrate preparation method provided by the embodiment of the invention comprises the steps of preparing a semiconductor layer as an active layer by utilizing a physical vapor deposition process, and placing the active layer in a magnetic control device, wherein the magnetic control device provides a rotating magnetic field for the active layer; the magnetic moment directions of the metal atoms in all directions are changed through the rotating magnetic field, so that the magnetic moment directions of the metal atoms and the oxygen atoms in all directions are the same, the stability of the active layer is improved, and the technical problem that the active layer of the existing array substrate is unstable is solved.
The foregoing detailed description is provided for one of the embodiments of the present invention, and the principle and the implementation of the present invention are explained herein by applying specific examples, and the above description of the embodiments is only used to help understanding the technical solution and the core idea of the present invention; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A preparation method of an array substrate is characterized by comprising the following steps:
providing a substrate base plate;
preparing a metal layer on the substrate by using a physical vapor deposition process, and forming a grid by using an etching process;
preparing an insulating layer on the grid electrode by using chemical vapor deposition, and then sequentially forming a grid insulating layer by using an etching process;
preparing a semiconductor layer on the gate insulating layer by using a physical vapor deposition process to serve as an active layer;
placing the substrate formed in the previous step in a rotating magnetic field, so that metal atoms of the active layer form a specific magnetic moment direction;
and preparing a subsequent functional film layer on the magnetized active layer to form the array substrate.
2. The method of claim 1, wherein the step of providing a rotating magnetic field to the active layer further comprises:
and putting the active layer and the substrate into a magnetic field in a direction parallel to the magnetic induction lines.
3. The method of claim 1, wherein the step of providing a rotating magnetic field to the active layer further comprises:
and putting the active layer into a magnetic field, wherein the rotating speed of the magnetic field ranges from 500 revolutions per minute to 2000 revolutions per minute.
4. The method for preparing an array substrate of claim 1, wherein in the step of forming the active layer, further comprising:
and preparing a semiconductor layer by utilizing a physical vapor deposition process to form the active layer, wherein the preparation material of the active layer is indium gallium zinc oxide.
5. The method for preparing an array substrate according to claim 4, wherein the step of forming the active layer further comprises:
a semiconductor layer is prepared by utilizing a physical vapor deposition process and is used as an active layer, and the thickness of the active layer ranges from 300 angstroms to 700 angstroms.
6. The method for preparing an array substrate of claim 1, wherein in the step of forming the gate insulating layer, further comprising: preparing an insulating layer as a gate insulating layer by a plasma chemical vapor deposition process, wherein the thickness of the gate insulating layer ranges from 1500 angstroms to 4000 angstroms.
7. The method for preparing an array substrate of claim 6, wherein in the step of forming the gate insulating layer, further comprising: and preparing an insulating layer as a gate insulating layer by using a plasma chemical vapor deposition process, wherein the gate insulating layer is prepared from silicon oxide or a silicon oxide and silicon nitride composite layer.
8. The method for preparing an array substrate according to claim 1, wherein the step of forming the gate electrode further comprises:
preparing an aluminum layer by using a physical vapor deposition process, and forming a grid electrode by using an etching process.
9. An array substrate, comprising:
a gate electrode disposed on the substrate base plate; and
a gate insulating layer disposed on the gate electrode; and
an active layer disposed on the gate insulating layer;
and the magnetic moment direction of the metal atoms in the active layer is the same as that of the oxygen atoms.
10. The array substrate of claim 9, wherein the active layer is made of indium gallium zinc oxide.
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| CN109801875A (en) * | 2018-12-26 | 2019-05-24 | 惠科股份有限公司 | Manufacturing method of array substrate, array substrate and display panel |
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