CN111162112A - Double-sided OLED display structure and manufacturing method - Google Patents
Double-sided OLED display structure and manufacturing method Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/128—Active-matrix OLED [AMOLED] displays comprising two independent displays, e.g. for emitting information from two major sides of the display
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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Abstract
The invention discloses a double-sided OLED display structure and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: manufacturing a grid electrode on a substrate; manufacturing an interlayer insulating layer on the grid; manufacturing an active layer on the interlayer insulating layer; manufacturing a first cathode on the interlayer insulating layer; manufacturing a source electrode and a drain electrode on the active layer; manufacturing a passivation layer on the source electrode, the drain electrode, the first cathode and the active layer; manufacturing a flat layer on the passivation layer; manufacturing a first OLED light-emitting layer on the flat layer, wherein the first OLED light-emitting layer is connected with a first cathode; manufacturing an anode on the flat layer, wherein the anode is connected with the first OLED light-emitting layer and the source electrode; forming a pixel defining layer on the anode; and manufacturing a second OLED light-emitting layer on the pixel defining layer, wherein the second OLED light-emitting layer is connected with the anode, and a second cathode is manufactured on the second OLED light-emitting layer. According to the technical scheme, the double-sided simultaneous display of the OLED screen is controlled by one TFT, the thickness of the double-sided OLED structure can be thinner than that of a structure in which two OLEDs are mechanically connected in the traditional technology, and the cost is reduced.
Description
Technical Field
The invention relates to the technical field of microelectronics, in particular to a double-sided OLED display structure and a manufacturing method thereof.
Background
An Organic Light-Emitting Diode (OLED) is also called an Organic electroluminescent display or an Organic Light-Emitting semiconductor. It was found in the laboratory in 1979 by professor deng dunqing cloud of chinese ethnic origin (china w.tang). The OLED display technology has the advantages of self-luminescence, wide viewing angle, almost infinite contrast, low power consumption, extremely high reaction speed and the like.
Double-sided displays have become the mainstream display in the trade markets of banks and supermarkets, such as billboards and labels. To achieve double-sided light emission, two OLEDs are typically packaged together, or 2 packaged individual OLEDs are bonded together, which increases the thickness of the display device.
Disclosure of Invention
Therefore, a double-sided OLED display structure and a manufacturing method are needed to be provided, so that the problem that the display screen is too thick due to simultaneous double-sided display of the OLED screen is solved.
In order to achieve the above object, the inventor provides a method for manufacturing a double-sided OLED display structure, comprising the following steps:
manufacturing a grid electrode on a substrate;
manufacturing an interlayer insulating layer covering the grid on the grid;
manufacturing an active layer on the interlayer insulating layer, wherein the active layer is arranged above the grid electrode, and the active layer outside the grid electrode is made into a conductor to form a first cathode which is transparent;
depositing metal on the active layer, manufacturing a source electrode and a drain electrode, and forming a TFT by the grid electrode, the source electrode and the drain electrode;
manufacturing a passivation layer covering the source electrode, the drain electrode and the first cathode electrode on the source electrode, the drain electrode and the first cathode electrode;
manufacturing a flat layer on the passivation layer, and manufacturing a first hole communicated with the first cathode and a second hole communicated with the source electrode on the passivation layer and the flat layer;
manufacturing a first OLED light-emitting layer in the first hole, wherein the first OLED light-emitting layer is connected with the first cathode;
manufacturing an opaque anode on the flat layer, wherein the anode is connected with the first OLED light-emitting layer and the anode is connected with the source electrode through the second hole, and the first cathode, the first OLED light-emitting layer and the anode form a first OLED device;
manufacturing a pixel defining layer covering the anode on the anode, manufacturing a third hole communicated with the anode on the pixel defining layer, manufacturing a second OLED light-emitting layer in the third hole, and connecting the second OLED light-emitting layer with the anode;
and manufacturing a light-transmitting second cathode on the second OLED light-emitting layer, wherein the second cathode, the second OLED light-emitting layer and the anode form a second OLED device.
Furthermore, when an active layer is formed on the interlayer insulating layer, the active layer is arranged above the grid electrode, the active layer outside the grid electrode is made into a conductor, and the first cathode is formed, the method further comprises the following steps:
depositing an active layer on the interlayer insulating layer, coating a photoresist on the active layer, exposing and developing the photoresist by using a half-tone mask plate to ensure that the thickness of the photoresist on the active layer above the grid is greater than that of the photoresist on the active layer outside the grid, and etching to remove the active layer without photoresist coverage and the photoresist on the active layer outside the grid;
forming a first cathode by making the active layer outside the gate conductive;
and removing the photoresist on the active layer.
Further, the second OLED light emitting layer is directly above the first OLED light emitting layer.
Further, the material of the anode is a metal material.
Further, the first cathode or the second cathode is an IGZO material conductible.
The inventor provides a double-sided OLED display structure, which is manufactured by the method for manufacturing a double-sided OLED display structure according to any one of the embodiments.
The inventors provide a double-sided OLED display structure comprising:
a grid electrode is arranged on the substrate;
an interlayer insulating layer is arranged on the grid electrode and covers the grid electrode;
an active layer is arranged on the interlayer insulating layer and is arranged above the grid electrode;
a first cathode which is formed by an active layer conductor is arranged on the interlayer insulating layer, the first cathode is transparent, and the first cathode is arranged on the outer side of the active layer;
a source electrode and a drain electrode are arranged on the active layer, and the grid electrode, the source electrode and the drain electrode form a TFT;
a passivation layer covering the source electrode, the drain electrode, the first cathode and the active layer is arranged on the source electrode, the drain electrode, the first cathode and the active layer;
a planarization layer is arranged on the passivation layer;
a first hole is formed in the passivation layer and the flat layer of the first cathode region, the bottom of the first hole is a first cathode, a first OLED light-emitting layer is arranged in the first hole and connected with the first cathode, and the bottom of the second hole is a source electrode;
a second hole is formed in the passivation layer and the flat layer of the source electrode region, and the bottom of the second hole is a source electrode;
the flat layer is provided with a light-tight anode, the anode is connected with a first OLED light-emitting layer in the first hole and a source electrode at the bottom of the second hole, and the first cathode, the first OLED light-emitting layer and the anode form a first OLED device;
a pixel defining layer covering the anode is arranged on the anode, a third hole is arranged on the pixel defining layer, the bottom of the third hole is the anode, a second OLED light-emitting layer is arranged in the third hole, and the second OLED light-emitting layer is connected with the anode;
and a light-transmitting second cathode is arranged on the second OLED light-emitting layer, and the second cathode, the second OLED light-emitting layer and the anode form a second OLED device.
Further, the second OLED light emitting layer is directly above the first OLED light emitting layer.
Further, the first cathode or the second cathode is an IGZO material conductible.
Further, the anode is metal.
Different from the prior art, the technical scheme drives the OLED by virtue of the TFT, so that double-sided light emission of the OLED can be realized, and double-sided simultaneous display of the OLED screen is controlled. The double-sided OLED structure can be thinner than a structure in which two OLEDs are mechanically connected in the prior art, and the cost can be reduced.
Drawings
FIG. 1 is a schematic cross-sectional view illustrating a gate formed on a substrate according to the present embodiment;
FIG. 2 is a schematic cross-sectional view illustrating an interlayer insulating layer formed on a substrate according to the present embodiment;
FIG. 3 is a schematic cross-sectional view illustrating the material for plating an active layer on a substrate according to the present embodiment;
FIG. 4 is a schematic cross-sectional view illustrating a protective photoresist coated on a substrate according to the present embodiment;
FIG. 5 is a schematic cross-sectional view illustrating a half-exposure mask used in the present embodiment;
FIG. 6 is a schematic cross-sectional view illustrating the development of the photoresist by using a half-exposure mask according to the present embodiment;
FIG. 7 is a schematic cross-sectional view of the first protective photoresist and the second protective photoresist of this embodiment;
FIG. 8 is a schematic cross-sectional view illustrating the conductor formation of the present embodiment;
fig. 9 is a schematic cross-sectional view of the active layer and the first cathode in this embodiment;
FIG. 10 is a schematic cross-sectional view illustrating the source and drain formed on the substrate according to the present embodiment;
FIG. 11 is a schematic cross-sectional view illustrating the fabrication of a passivation layer and a planarization layer on a substrate according to the present embodiment;
FIG. 12 is a schematic cross-sectional view illustrating a first OLED light-emitting layer fabricated on a substrate according to this embodiment;
FIG. 13 is a schematic cross-sectional view illustrating an anode fabricated on a substrate according to the present embodiment;
FIG. 14 is a schematic cross-sectional view illustrating a pixel defining layer formed on a substrate according to the present embodiment;
FIG. 15 is a schematic cross-sectional view illustrating a second OLED light-emitting layer fabricated on a substrate according to this embodiment;
fig. 16 is a schematic cross-sectional view illustrating a second cathode fabricated on a substrate according to this embodiment.
Description of reference numerals:
1. a substrate;
2. a gate electrode;
3. an interlayer insulating layer;
4. an active layer;
5. a first cathode;
6. a source electrode;
7. a drain electrode;
8. a passivation layer;
9. a planarization layer;
10. a first OLED light emitting layer;
11. an anode;
12. a pixel defining layer;
13. a second OLED light emitting layer;
14. a second cathode;
A. the material of the active layer;
B. protecting the photoresist;
b1, a first protective photoresist;
b2, a second protective photoresist;
C. a half-exposure mask plate;
c1, full light-transmitting area;
c2, partial shading area;
c3, full shading.
Detailed Description
To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
Referring to fig. 1 to 16, the present embodiment provides a method for manufacturing a double-sided OLED display structure, the method can be performed on a substrate, the substrate can be glass, transparent plastic, metal foil, etc. commonly used in the conventional manufacturing process, and the substrate is used for supporting the double-sided OLED display structure. The manufacturing method comprises the following steps: manufacturing a grid 2 on a substrate 1; referring to fig. 1, specifically, a photoresist may be coated on a substrate 1, the photoresist may be patterned, that is, the photoresist may be exposed and developed to open an area where a gate is to be formed, then a metal may be plated to form a gate 2 of a TFT in the area where the gate is to be formed, and finally the photoresist may be removed.
After the grid 2 is manufactured, an interlayer insulating layer 3 is manufactured on the grid 2, and the interlayer insulating layer 3 plays an insulating role; referring to fig. 2, in particular, an insulating material, such as nitride (silicon nitride, etc.), oxide (silicon oxide, silicon dioxide) or other insulating material, may be plated on the substrate 1, and an interlayer insulating layer 3 is formed on the substrate 1, wherein the interlayer insulating layer 3 covers the gate electrode 2.
After the interlayer insulating layer is manufactured, in order to optimize the double-sided OLED display structure and the process steps, an active layer 4 and a first cathode 5 are simultaneously manufactured on the interlayer insulating layer, and the first cathode 5 is used as the cathode of a first OLED light-emitting layer 10; referring to fig. 3 to 9, specifically, a material a of an active layer may be plated on the interlayer insulating layer 3, and the structure is shown in fig. 3. The material a of the active layer may be, for example, transparent Indium Gallium Zinc Oxide (IGZO), transparent Indium Zinc Tin Oxide (IZTO), or transparent Indium Gallium Zinc Titanium Oxide (IGZTO), or other materials with similar characteristics. Then, a protective photoresist B is coated on the material A of the active layer, and the structure is shown in FIG. 4. After the protective photoresist is coated, a half exposure mask C having a full light shielding region C3, a full light transmitting region C1 and a half light transmitting region C2 is used to expose the protective photoresist B, and the structure is shown in fig. 5 and 6. If the protective photoresist is a positive photoresist, the full-light-shielding region C3 corresponds to the full-development region and is aligned with the region to be protected (the active layer on the gate), the half-light-transmitting region C2 corresponds to the half-development region and is aligned with the first cathode to be manufactured, and the full-light-transmitting region C1 is aligned with the rest of the irrelevant portions (the portions to be removed). If the protective photoresist B is a negative photoresist, the full light-transmitting region C1 corresponds to the full development region and is aligned to the region to be protected (the active layer on the gate), the half light-transmitting region C2 corresponds to the half development region and is aligned to the first cathode to be fabricated, and the full light-shielding region C3 is aligned to the other unrelated portions. It should be noted that the protective photoresist B covering the active layer on the gate is named as a first protective photoresist B1, and the protective photoresist B covering the first cathode to be fabricated is named as a second protective photoresist B2.
The application takes a positive photoresist as an example, and the protective photoresist B is exposed and developed. This makes the thickness of the first protective photoresist B1 covering the active layer above the gate larger than the thickness of the second protective photoresist B2 covering the first cathode to be fabricated, and removes the protective photoresist B on the remaining irrelevant portions, as shown in fig. 6. After the protective photoresist is exposed by using a halftone mask plate, the thickness of the protective photoresist on the first cathode to be manufactured is made larger than that of the material a of the active layer, and the active layer without photoresist coverage (i.e., the rest of irrelevant parts) is removed by wet etching, and the structure is shown in fig. 7. And then, the protective photoresist of the first cathode to be manufactured can be etched and removed by a dry etching mode.
Referring to fig. 8 and 9, after the protective photoresist for fabricating the first cathode is removed, a conductive process may be performed, and the conductive process may be a doping process or a Plasma Treatment process. The first protective photoresist B1 still exists on the active layer above the gate, and the first protective photoresist B1 can protect the active layer during the conductor processing and keep the semiconductor properties. After the conductor processing, the first protective photoresist B1 on the active layer 4 is removed, the active layer 4 is above the gate 2 region, and the first cathode 5 is on the interlayer insulating layer 3 outside the active layer 4, and the structure is as shown in fig. 9. The active layer 4 and the first cathode 5 are manufactured simultaneously by using the same photomask (mask), so that the number of photomasks is saved, the process flow is saved, the production efficiency is improved, and the manufacturing cost is reduced.
In the art, doping: and injecting Al, In, Ga and the like into the oxide semiconductor by adopting an ion injection mode. Due to the injection of metal ions, the number of majority carriers in the transparent oxide film can be increased, the mobility of the majority carriers is improved, the resistivity is reduced, the conductor (or the conduction) is realized, and the conductive property is enhanced. Most of the carriers of the oxide semiconductor function as electrons, and the transport ability of electrons is higher than that of holes. Plasma Treatment: as a treatment, a plasma is generally used for surface treatment, such as NO2、O2And H2And the like, the movable electrons of the oxide semiconductor are increased, the resistivity of the film layer is reduced, and the conductive property is enhanced.
After the active layer 4 and the first cathode 5 are manufactured, a source electrode 6 and a drain electrode 7 of the TFT are manufactured on the active layer 4; referring to fig. 10, specifically, a photoresist may be coated on the substrate 1, and then the photoresist may be patterned, so that the regions where the source and the drain are to be formed are opened. Then plated with a metal, which may be aluminum (Al), silver (Ag), and gold (Au) or other materials with similar properties, which have high reflectivity. The source 6 of the TFT is formed on one side on the active layer 4 and the drain 7 of the TFT is formed on the other side on the active layer 4, and finally the photoresist is removed. Generally, a TFT (thin Film transistor) includes a gate electrode, an interlayer insulating layer on the gate electrode, an active layer, a source electrode and a drain electrode, and the TFT serves as a switch in a circuit.
Then, a passivation layer 8 covering the source electrode 6, the drain electrode 7, the first cathode 5 and the active layer 4 is manufactured on the source electrode 6, the drain electrode 7, the first cathode 5 and the active layer 4, and then a flat layer 9 is manufactured on the passivation layer 8; referring to fig. 11, specifically, the material of the passivation layer 8 is first plated on the substrate 1, and the material of the passivation layer 8 may be SiOx film or a film with a high dielectric constant, such as Al2O3. A passivation layer 8 covering the source electrode 6, the drain electrode 7, the first cathode electrode 5 and the active layer 4 is formed on the source electrode 6, the drain electrode 7, the first cathode electrode 5 and the active layer 4. After the passivation layer 8 is manufactured, a flat layer 9 is manufactured on the passivation layer 8, the flat layer 9 covers the passivation layer 8, and the flat layer 9 may be a SiOx film or other similar materials.
After the passivation layer 8 and the flat layer 9 are manufactured, manufacturing a first hole and a second hole on the passivation layer 8 and the flat layer 9, wherein the first hole is used for connecting a first OLED light-emitting layer 10 and a first cathode 5, and the second hole is used for connecting an anode 11 and a source 6; referring to fig. 11, in detail, a photoresist is coated on the substrate 1, and the photoresist is patterned, that is, the portion to be formed with the first hole and the portion to be formed with the second hole are opened. Then, the photoresist is used as a mask to etch the planarization layer 9 in the first cathode 5 region to the first cathode 5, so as to form a first hole, wherein the bottom of the first hole is the first cathode 5. And etching the flat layer 9 in the source electrode 6 region to the source electrode 6 to form a second hole, wherein the bottom of the second hole is the source electrode 6, and finally removing the photoresist.
Then, a first OLED light-emitting layer 10 is manufactured in the first hole; referring to fig. 12, specifically, a photoresist may be coated on the substrate 1, and the photoresist may be patterned to open the region where the first OLED light emitting layer 10 is to be fabricated, and then the OLED organic material is plated by evaporation to form the first OLED light emitting layer 10 in the first hole. The first OLED light-emitting layer 10 is connected to the first cathode 5 through a first hole. The first OLED light-emitting layer 10 is bottom-emitting, and the light-emitting direction of the first OLED light-emitting layer 10 is from the first OLED light-emitting layer 10 to the first cathode 5. It should be noted that there are a first cathode and an interlayer insulating layer along the light emitting direction of the first OLED light emitting layer 10, so it is preferable to make the first cathode and the interlayer insulating layer transparent so as to be transparent to light.
After the first OLED light-emitting layer 10 is manufactured, an opaque anode 11 is manufactured on the flat layer 9, and the anode 11 is used as an anode 11 commonly used by the first OLED light-emitting layer 10 and the second OLED light-emitting layer 13; referring to fig. 13, in detail, a photoresist is coated on the substrate 1, and the photoresist is patterned, so that an area where the anode 11 is to be fabricated is opened. Then the metal required for the anode, which may be high reflectivity aluminum (Al), silver (Ag), gold (Au), etc., is plated, forming an opaque anode 11 on the face of the planar layer and in the second hole. The anode 11 connects the first OLED light emitting layer 10 in the first hole and the source 6 in the second hole, and finally the photo resist is removed. The anode 11 may constitute a first OLED device with a first OLED light-emitting layer 10 below, a first cathode 5, etc., and the anode 11 may also constitute a second OLED device with a second OLED light-emitting layer 13 above, a second cathode 14, etc.
Referring to fig. 14 and 15, a pixel defining layer 12 is formed on the anode 11 to cover the anode 11, and a third hole is formed in the pixel defining layer 12, wherein the bottom of the third hole is the anode 11 (typically, the anode on the side of the planarization layer 9). And finally, plating an OLED organic material in an evaporation mode, and forming a second OLED light-emitting layer 13 in the third hole. The second OLED light emitting layer 13 may be directly above the first OLED light emitting layer 10, or may be outside of the upper side of the first OLED light emitting layer 10. The second OLED light-emitting layer 13 emits top light, and the light-emitting direction of the second OLED light-emitting layer 13 is from the second OLED light-emitting layer 13 to the second cathode 14. It should be noted that there is a second cathode along the light emitting direction of the second OLED light emitting layer 10 or a film layer subsequently covering the second cathode, etc., so these are preferably transparent so as to be able to transmit light.
Then, a second cathode 14 is manufactured on the second OLED light-emitting layer 13, and the second cathode 14 is used as a cathode of the second OLED light-emitting layer 13; referring to fig. 16 (the arrow in fig. 16 indicates the light emitting direction of the OLED device), in particular, a photoresist may be coated on the substrate 1, patterned, exposed and developed to open the portion where the second cathode is to be formed. And plating the metal required by the second cathode 14, and forming the second cathode 14 on the second OLED light-emitting layer 13 in the area where the second cathode is to be manufactured. The second cathode 14 connects the second OLED light emitting layer 13 and the pixel defining layer 12. The second cathode 14 is transparent and can transmit the light emitted from the OLED, for example, the second cathode can be IGZO, IZTO, IGZTO or other material with similar characteristics, which has the same conductivity as the first cathode. The step of manufacturing the second cathode having the conductor is the same as the step of conducting the first cathode, which is not described herein, and the conductor may be formed by doping or Plasma Treatment after the metal is deposited.
In a further embodiment, a double-sided OLED display structure described herein is a BCE structure and a bottom gate structure. In fact, the structure can be an ESL structure and a bottom gate structure, or an ESL structure and a top gate structure, a BCE structure and a top gate structure, or similar changes can be made. The ESL structure has one more etching barrier layer than the BCE structure, and the etching barrier layer is manufactured between the active layer and the source/drain electrode. Specifically, after the active layer is manufactured, the etching stop layer may be manufactured immediately, and the material required for the etching stop layer, such as nitride, silicon dioxide, etc., may be plated on the substrate to form the etching stop layer on the active layer. I.e. the etch stop layer covers the active layer (the etch stop layer may also cover the first cathode), and then the source electrode is fabricated on one side and the drain electrode is fabricated on the other side of the region of the active layer above the etch stop layer.
The second OLED device (top emitting) is connected with the source electrode of the TFT through the anode, and the first OLED device (bottom emitting) is connected with the source electrode of the TFT through the anode, so that the problem of controlling the simultaneous display of two sides of the OLED screen by one TFT switch can be realized. The OLED screen can be driven by one TFT switch, so that double-sided light emission of the OLED is realized, and double-sided simultaneous display of the OLED screen is controlled. The double-sided OLED structure can be thinner than a structure in which two OLEDs are mechanically connected in the prior art, and the cost can be reduced.
The inventor provides a double-sided OLED display structure, and the double-sided OLED display structure is manufactured by the manufacturing method of any one of the embodiments. The method comprises the following steps: referring to fig. 1 and 2, a gate electrode 2 is disposed on a substrate 1, and the gate electrode 2 is a part of a TFT. The substrate 1 may be glass, transparent plastic, metal foil, etc. commonly used in the existing manufacturing process, and the substrate 1 is used to support a double-sided OLED display structure. An interlayer insulating layer 3 is provided on the gate electrode 1 so as to cover the gate electrode 2, and the interlayer insulating layer 3 serves as an insulator.
Referring to fig. 9, an active layer 4 is disposed on the interlayer insulating layer 3, the active layer 4 is above the gate region, and the active layer 4 serves as a part of the TFT. The active layer 4 may be transparent Indium Gallium Zinc Oxide (IGZO), transparent Indium Zinc Tin Oxide (IZTO), or transparent Indium Gallium Zinc Titanium Oxide (IGZTO), or other materials with similar characteristics.
Referring to fig. 9, a light-transmissive first cathode 5 is disposed on the interlayer insulating layer 3, and the first cathode 5 is outside the active layer. The first cathode 5 is a conductive structure. The first cathode 5 may be transparent Indium Gallium Zinc Oxide (IGZO), transparent Indium Zinc Tin Oxide (IZTO), or transparent Indium Gallium Zinc Titanium Oxide (IGZTO), or other materials with similar properties.
Referring to fig. 10, a source electrode 6 and a drain electrode 7 are disposed on the active layer 4, the source electrode 6 is disposed on one side of the active layer 4, and the drain electrode 7 is disposed on the other side of the active layer 5. The gate electrode, the interlayer insulating layer on the gate electrode, the active layer, the source electrode and the drain electrode constitute a TFT which can simultaneously control two OLED devices.
Referring to fig. 11 and 12, a passivation layer 9 covering the source electrode, the drain electrode, the first cathode electrode and the active layer 8 is disposed on the source electrode, the drain electrode, the first cathode electrode and the active layer. The material of the passivation layer 8 may be a SiOx film or a film having a high dielectric constant, such as Al2O3. A flat layer 9 is arranged on the passivation layer, the flat layer 9 covers the passivation layer 8, and the material of the flat layer 9 can beSiOx films, and the like. A first hole and a second hole are disposed on the passivation layer of the first cathode region. The bottom of the second hole is a source electrode, and the bottom of the first hole is a first cathode. A first OLED light-emitting layer 10 is disposed in the first hole, and the first OLED light-emitting layer 10 is connected to the first cathode through the first hole. The first OLED light-emitting layer 10 is an organic light-emitting material. The first OLED light-emitting layer 10 is bottom-emitting, and the light-emitting direction of the first OLED light-emitting layer 10 is from the first OLED light-emitting layer to the first cathode. It should be noted that there are a first cathode and an interlayer insulating layer along the light emitting direction of the first OLED light emitting layer 10, so the first cathode and the interlayer insulating layer are preferably transparent so as to be transmitted by light.
Referring to fig. 13, in the present embodiment, a light-tight anode 11 is disposed on the planarization layer. The anode 11 connects the first OLED light emitting layer in the first hole and the source at the bottom of the second hole. The anode 11 may be a metal material such as aluminum (Al), silver (Ag), and gold (Au) having high reflectivity so that light is not easily transmitted therethrough. The anode 11 may constitute a first OLED device with a first OLED light-emitting layer 10 below, a first cathode 5, etc., and the anode 11 may also constitute a second OLED device with a second OLED light-emitting layer 13 above, a second cathode 14, etc.
Referring to fig. 14 and 15, a pixel defining layer 12 is disposed on the anode to cover the anode. A third hole is disposed on the pixel defining layer 12, and a bottom of the third hole is an anode. A second OLED light-emitting layer 13 is arranged in the third hole, the second OLED light-emitting layer 13 being connected to the anode. The second OLED light-emitting layer 13 emits top light, and the light-emitting direction of the second OLED light-emitting layer 13 is from the second OLED light-emitting layer 13 to the second cathode 14. The second OLED light emitting layer 13 may be directly above the first OLED light emitting layer 10, or may be outside of the upper side of the first OLED light emitting layer 10. It should be noted that there is a second cathode along the light emitting direction of the second OLED light emitting layer 10 or a film layer subsequently covering the second cathode, and these are preferably transparent to allow light to pass through.
Referring to fig. 16, in the present embodiment, a light-transmitting second cathode 14 is disposed on the second OLED light-emitting layer, and the second cathode 14 is used as a cathode of the second OLED light-emitting layer. The second cathode 14 may be the same conductively IGZO, IZTO, IGZTO or other material with similar properties as the first cathode. Of course, IGZO, IZTO, IGZTO, etc. which are not conductive structures may be used. The second cathode, the second OLED light-emitting layer and the anode form a second OLED device.
In further embodiments, the double-sided OLED display structure may also be an ESL structure and a bottom gate structure, or an ESL structure and a top gate structure, a BCE structure and a top gate structure, or similar transformations may be made. The ESL structure has one more etch stop layer than the BCE structure, and the etch stop layer is arranged between the active layer and the source/drain electrodes. A source electrode is arranged on one side of the etching barrier layer in the active layer area, and a drain electrode is arranged on the other side.
The second OLED device (top emitting) is connected with the source electrode of the TFT through the anode, and the first OLED device (bottom emitting) is connected with the source electrode of the TFT through the anode, so that the problem of controlling the simultaneous display of two sides of the OLED screen by one TFT switch can be realized. The OLED screen can be driven by one TFT switch, so that double-sided light emission of the OLED is realized, and double-sided simultaneous display of the OLED screen is controlled. The double-sided OLED structure can be thinner than a structure in which two OLEDs are mechanically connected in the prior art, and the cost can be reduced.
It should be noted that, although the above embodiments have been described herein, the invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed in the content of the present specification and the attached drawings, which are included in the scope of the present invention.
Claims (10)
1. A manufacturing method of a double-sided OLED display structure is characterized by comprising the following steps:
manufacturing a grid electrode on a substrate;
manufacturing an interlayer insulating layer covering the grid on the grid;
manufacturing an active layer on the interlayer insulating layer, wherein the active layer is arranged above the grid electrode, and the active layer outside the grid electrode is made into a conductor to form a first cathode which is transparent;
depositing metal on the active layer, manufacturing a source electrode and a drain electrode, and forming a TFT by the grid electrode, the source electrode and the drain electrode;
manufacturing a passivation layer covering the source electrode, the drain electrode and the first cathode electrode on the source electrode, the drain electrode and the first cathode electrode;
manufacturing a flat layer on the passivation layer, and manufacturing a first hole communicated with the first cathode and a second hole communicated with the source electrode on the passivation layer and the flat layer;
manufacturing a first OLED light-emitting layer in the first hole, wherein the first OLED light-emitting layer is connected with the first cathode;
manufacturing an opaque anode on the flat layer, wherein the anode is connected with the first OLED light-emitting layer and the anode is connected with the source electrode through the second hole, and the first cathode, the first OLED light-emitting layer and the anode form a first OLED device;
manufacturing a pixel defining layer covering the anode on the anode, manufacturing a third hole communicated with the anode on the pixel defining layer, manufacturing a second OLED light-emitting layer in the third hole, and connecting the second OLED light-emitting layer with the anode;
and manufacturing a light-transmitting second cathode on the second OLED light-emitting layer, wherein the second cathode, the second OLED light-emitting layer and the anode form a second OLED device.
2. The method of claim 1, wherein the active layer is formed on the interlayer insulating layer, the active layer is above the gate electrode, and the active layer outside the gate electrode is conducted to form the first cathode, and further comprising:
depositing an active layer on the interlayer insulating layer, coating a photoresist on the active layer, exposing and developing the photoresist by using a half-tone mask plate to ensure that the thickness of the photoresist on the active layer above the grid is greater than that of the photoresist on the active layer outside the grid, and etching to remove the active layer without photoresist coverage and the photoresist on the active layer outside the grid;
forming a first cathode by making the active layer outside the gate conductive;
and removing the photoresist on the active layer.
3. A method for fabricating a double-sided OLED display structure according to claim 1 or 2, wherein the second OLED light emitting layer is directly above the first OLED light emitting layer.
4. The method of claim 1, wherein the anode is made of a metal material.
5. The method of claim 1, wherein the first cathode or the second cathode is an IGZO material.
6. A double-sided OLED display structure, wherein the double-sided OLED display structure is manufactured by the method of manufacturing a double-sided OLED display structure according to any one of claims 1 to 5.
7. A dual-sided OLED display structure comprising:
a grid electrode is arranged on the substrate;
an interlayer insulating layer is arranged on the grid electrode and covers the grid electrode;
an active layer is arranged on the interlayer insulating layer and is arranged above the grid electrode;
a first cathode which is formed by an active layer conductor is arranged on the interlayer insulating layer, the first cathode is transparent, and the first cathode is arranged on the outer side of the active layer;
a source electrode and a drain electrode are arranged on the active layer, and the grid electrode, the source electrode and the drain electrode form a TFT;
a passivation layer covering the source electrode, the drain electrode, the first cathode and the active layer is arranged on the source electrode, the drain electrode, the first cathode and the active layer;
a planarization layer is arranged on the passivation layer;
a first hole is formed in the passivation layer and the flat layer of the first cathode region, the bottom of the first hole is a first cathode, a first OLED light-emitting layer is arranged in the first hole, and the first OLED light-emitting layer is connected with the first cathode;
a second hole is formed in the passivation layer and the flat layer of the source electrode region, and the bottom of the second hole is a source electrode;
the flat layer is provided with a light-tight anode, the anode is connected with a first OLED light-emitting layer in the first hole and a source electrode at the bottom of the second hole, and the first cathode, the first OLED light-emitting layer and the anode form a first OLED device;
a pixel defining layer covering the anode is arranged on the anode, a third hole is arranged on the pixel defining layer, the bottom of the third hole is the anode, a second OLED light-emitting layer is arranged in the third hole, and the second OLED light-emitting layer is connected with the anode;
and a light-transmitting second cathode is arranged on the second OLED light-emitting layer, and the second cathode, the second OLED light-emitting layer and the anode form a second OLED device.
8. A two-sided OLED display structure as claimed in claim 7 wherein said second OLED light emitting layer is directly over said first OLED light emitting layer.
9. The double-sided OLED display structure of claim 7, wherein the first cathode or the second cathode is an IGZO material conductorization.
10. A two-sided OLED display structure as claimed in claim 7, wherein the anode is metal.
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| CN111697005A (en) * | 2020-05-25 | 2020-09-22 | 福建华佳彩有限公司 | Array substrate and manufacturing method thereof |
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