CN111668268A

CN111668268A - OLED display device and manufacturing method

Info

Publication number: CN111668268A
Application number: CN202010490113.XA
Authority: CN
Inventors: 阮桑桑; 黄志杰; 苏智昱; 潜垚
Original assignee: Fujian Huajiacai Co Ltd
Current assignee: Fujian Huajiacai Co Ltd
Priority date: 2020-06-02
Filing date: 2020-06-02
Publication date: 2020-09-15

Abstract

The invention discloses an OLED display device and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: depositing an active layer material on a substrate, forming an active layer on the substrate, etching the active layer to obtain a touch electrode area and an active area, performing electric conduction on the touch electrode area to form a transparent touch electrode, and taking two sides on the active area as source and drain electrode contact areas; manufacturing a first insulating layer; manufacturing a grid; manufacturing a second insulating layer; respectively manufacturing through holes on the source drain contact area and the second insulating layer of the touch electrode area; manufacturing a source electrode, a drain electrode and a touch lead; and manufacturing a display device layer. According to the technical scheme, the active layer is used as the touch electrode after being conducted, and the source and drain metal is used as the touch lead wire, so that the performance of the touch electrode is stable, and the manufacturing process is relatively simple.

Description

OLED display device and manufacturing method

Technical Field

The invention relates to the technical field of OLED, in particular to an OLED display device and a manufacturing method thereof.

Background

The organic light emitting diode display has many advantages such as lightness, thinness, wide color gamut, large visual angle, high brightness and flexibility, and is gradually becoming the mainstream display technology behind the liquid crystal display. The transparent display can be used for commercial advertisement display, intelligent dressing mirrors, interaction between a bank counter and a customer and other scenes, and is receiving more and more attention. The existing OLED touch display mainly adopts plug-in, and the touch sensor is attached to the OLED display panel, so that the thickness of the OLED display is increased, the bending performance is poor, the process is complex, and the cost is high. The TIC structure OLED touch display mostly uses the patterned cathode as a touch electrode, so that signal interference exists, and the manufacturing of a cathode patterning process is difficult due to the influence of OLED evaporation precision.

Disclosure of Invention

Therefore, it is desirable to provide an OLED display device and a manufacturing method thereof, so as to solve the problem of poor performance of the OLED due to the multiplexing of the cathode as the touch electrode.

To achieve the above object, the present invention provides a method for fabricating an OLED display device, including a method for fabricating a pixel region:

depositing an active layer material on a substrate, forming an active layer on the substrate, etching the active layer to obtain a touch electrode area and an active area, performing electric conduction on the touch electrode area to form a transparent touch electrode, and taking two sides on the active area as source and drain electrode contact areas;

manufacturing a first insulating layer on the active area and the touch electrode;

manufacturing a grid electrode on the first insulating layer of the active area region;

manufacturing a second insulating layer on the grid and the first insulating layer;

respectively manufacturing through holes on the source drain contact area and the second insulating layer of the touch electrode area, wherein the through holes penetrate through the second insulating layer and the first insulating layer, and the bottoms of the through holes are respectively the surface of the touch electrode and the surface of the source drain contact area;

manufacturing a source electrode, a drain electrode and a touch lead on the second insulating layer, wherein the source electrode and the drain electrode are respectively connected with the active layer through via holes of the second insulating layer on a source-drain electrode contact region, and the touch lead is connected with the touch electrode through via holes of the second insulating layer on the touch electrode;

and manufacturing a display device layer on the second insulating layer, the source electrode, the drain electrode and the touch lead.

Further, depositing an active layer material on the substrate, forming an active layer on the substrate, etching the active layer to obtain a touch electrode region and an active region, performing electrical conduction on the touch electrode region to form a transparent touch electrode, and when two sides of the active region are used as source and drain contact regions, the method further comprises the following steps:

coating photoresist on the active layer, exposing and developing the photoresist by using a half-gray-scale mask plate, wherein a part of a developing region corresponds to the touch electrode region, reserving the upper part of the photoresist on the touch electrode region and the photoresist on the active region after developing, removing the photoresist on the non-touch electrode region and the non-active region, and then removing the active layers on the non-touch electrode region and the non-active region by etching by using the photoresist as a mask;

removing the lower part of the photoresist on the touch electrode area;

conducting electrical conduction on the touch electrode area to form a transparent touch electrode;

and removing the photoresist on the active region.

coating photoresist on the active layer, exposing and developing the photoresist by using a half-gray-scale mask plate, wherein a half developing area corresponds to a touch electrode area and a source drain electrode contact area on the active area, the upper part of the photoresist on the touch electrode area and the source drain electrode contact area is reserved after development, the photoresist on the active area is reserved, the photoresist on a non-touch electrode area and a non-active area is removed, and then the photoresist is used as a mask to etch and remove the active layer on the non-touch electrode area and the non-active area;

removing the lower parts of the light resistors on the touch electrode area and the source drain electrode contact area;

conducting the touch electrode area to form a touch electrode, and conducting the source drain contact area;

and removing the photoresist on the active region.

Further, when the display device layer is manufactured on the second insulating layer, the source electrode, the drain electrode and the touch lead, the method further comprises the following steps:

manufacturing a passivation layer, wherein the passivation layer covers the source electrode, the drain electrode and the touch lead;

manufacturing an organic insulating layer, wherein the organic insulating layer covers the passivation layer, manufacturing a through hole on the organic insulating layer in the drain electrode area, the through hole penetrates through the organic insulating layer and the passivation layer, and the bottom of the through hole is a drain electrode;

manufacturing an anode, wherein the anode is connected with the drain electrode through a via hole on the organic insulating layer;

manufacturing a pixel defining layer, wherein the pixel defining layer covers the anode;

manufacturing a via hole communicated with the anode on the pixel defining layer, and manufacturing an organic light emitting layer at the via hole on the pixel defining layer, wherein the organic light emitting layer is connected with the anode;

and manufacturing a cathode, wherein the cathode covers the organic light-emitting layer.

Furthermore, the number of the pixel regions is multiple, the pixel regions are arranged in an array to form a touch module, and the pixel regions on one line in each touch module are connected through touch leads.

Further, before depositing the active layer material on the substrate, the method further comprises the following steps:

and manufacturing a buffer layer on the substrate, wherein the upper surface of the buffer layer is used for bearing the source region and the touch electrode.

The present inventors provide an OLED display device characterized by comprising: a pixel region, the pixel region comprising:

an active area and a transparent touch electrode are arranged on the substrate, the touch electrode is of a conductor structure, and two sides of the active area are used as source and drain contact areas;

a first insulating layer is arranged on the touch electrode and the active area;

a grid electrode is arranged on the first insulating layer of the active area region;

a second insulating layer is arranged on the grid electrode and the first insulating layer;

through holes are respectively formed in the second insulating layers in the touch electrode and source and drain contact area regions, the through holes penetrate through the second insulating layers and the first insulating layers, and the bottom of each through hole is the surface of the touch electrode and the surface of the source and drain contact area;

a source electrode, a drain electrode and a touch lead are arranged on the second insulating layer, the source electrode and the drain electrode are respectively connected with the active layer through a via hole of the second insulating layer positioned on a source drain electrode contact area, and the touch lead is connected with the touch electrode through a via hole of the second insulating layer positioned on the touch electrode;

and a display device layer is arranged on the second insulating layer, the source electrode, the drain electrode and the touch lead.

Furthermore, the number of the pixel regions is multiple, the pixel regions are arranged in an array to form a touch module, and the pixel regions on one line in each touch module are connected with each other through a touch lead.

Further, the display device layer includes:

a passivation layer is arranged on the source electrode, the drain electrode and the touch lead;

an organic insulating layer is arranged on the passivation layer, a through hole is arranged on the organic insulating layer in the drain electrode area, the through hole penetrates through the organic insulating layer and the passivation layer, and the bottom of the through hole is a drain electrode;

an anode is arranged on the organic insulating layer and is connected with the drain electrode through a through hole on the organic insulating layer;

a pixel defining layer is arranged on the organic insulating layer and covers the anode;

a through hole communicated with the anode is arranged on the pixel defining layer, an organic light emitting layer is arranged at the through hole on the pixel defining layer, and the organic light emitting layer is connected with the anode;

a cathode is disposed on the organic light emitting layer.

Further, the active drain contact region is of a conductive structure.

Compared with the prior art, the technical scheme has the advantages that the active layer is used as the touch electrode after being conducted, and the source and drain metal is used as the touch lead, so that the performance of the touch electrode is stable, and the manufacturing process is relatively simple. And the touch electrode and the touch lead are arranged in the OLED display device, so that the thickness of the OLED display device can be reduced, the OLED display device becomes thinner and thinner, and the light transmittance of the OLED display device is not influenced.

Drawings

FIG. 1 is a cross-sectional view of a buffer layer formed on a substrate according to the present embodiment;

FIG. 2 is a cross-sectional view of the active layer material and the photoresist formed on the substrate according to the present embodiment;

FIG. 3 is a cross-sectional view of a substrate with a half-tone mask for exposing and developing a photoresist on a source material;

FIG. 4 is a sectional view showing the ashing process performed on the substrate according to this embodiment;

FIG. 5 is a cross-sectional view illustrating the fabrication of a touch electrode on a substrate according to the present embodiment;

FIG. 6 is a cross-sectional view of a first insulating layer formed on a substrate according to the present embodiment;

FIG. 7 is a cross-sectional view of a gate formed on a substrate according to the present embodiment;

FIG. 8 is a cross-sectional view of a second insulating layer and a via hole formed in a substrate according to the present embodiment;

FIG. 9 is a cross-sectional view of the source, the drain and the touch lead formed on the substrate according to the present embodiment;

FIG. 10 is a cross-sectional view of a display device layer formed on a substrate according to this embodiment;

fig. 11 is a cross-sectional structure diagram of the touch module and the touch chip in the embodiment;

fig. 12 is a cross-sectional structure diagram of the touch module and the pixel region according to the embodiment;

fig. 13 is a cross-sectional view of the touch module of the present embodiment along the a-a direction.

Description of reference numerals:

1. a substrate;

2. a buffer layer;

3. an active layer material;

31. an active layer;

32. a touch electrode;

4. a first insulating layer;

5. a gate electrode;

6. a second insulating layer;

7. source and drain electrode materials;

71. a source electrode;

72. a drain electrode;

73. a touch lead;

8. a display device layer;

81. a third insulating layer;

82. an anode;

83. a pixel defining layer;

84. an organic light emitting layer;

85. a cathode;

9. a touch chip;

A. a light resistance;

B. a half gray scale mask plate;

C. a pixel region;

D. and a touch module.

Detailed Description

To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.

Referring to fig. 1 to 13, the present embodiment provides a method for fabricating an OLED display device, which can be fabricated on a substrate, such as glass, transparent plastic, and metal foil, having similar characteristics. Preferably a glass substrate. Firstly, a manufacturing method of a pixel region is introduced: referring to fig. 1, a buffer layer is formed on a substrate to increase adhesion between the buffer layer and an active layer; specifically, a buffer layer material, such as nitride (silicon nitride, etc.), oxide (silicon oxide, silicon dioxide), or other insulating material, may be plated on the substrate 1 to form the buffer layer 2 on the substrate. Alternatively, the buffer layer 2 may be formed without being formed, and the touch electrode 32 and the active layer 31 may be formed directly on the substrate 1.

Then, manufacturing a touch electrode and an active layer on the buffer layer; referring to fig. 2, an active layer material 3 is deposited, and two active layer portions (an active region and a touch electrode region) are formed on the buffer layer 2, where the active region serves as an active layer 31 and the touch electrode region serves as a touch electrode 32. The active layer material 3 may be transparent Indium Gallium Zinc Oxide (IGZO), transparent Indium Zinc Tin Oxide (IZTO), transparent Indium Gallium Zinc Titanium Oxide (IGZTO), or other materials with similar characteristics. These transparent materials can maintain the high performance of the transparent display without affecting the light transmittance of the transparent display. The channel portion of the active layer 31 is not made conductive, but the source-drain contact region on the active layer 31 may be made conductive. The active layer in the touch electrode area is made conductive to form a transparent touch electrode 32.

Specifically, the active layer 31 and the touch electrode 32 may be manufactured by coating a photoresist a on the active layer material 3, and exposing and developing the photoresist using a half-gray mask B. The half gray scale mask plate B is provided with a light transmitting area, a partial light transmitting area and a light shielding area, if the coated photoresist A is positive photoresist (positive photoresist), the light transmitting area corresponds to a complete developing area and corresponds to an area to be removed of the positive photoresist, the partial light transmitting area corresponds to an incomplete developing area and corresponds to an area to be removed of the partial positive photoresist, and the light shielding area corresponds to an area not to be developed and corresponds to an area to be reserved of the positive photoresist; if the coated photoresist is a negative photoresist (negative photoresist), the light-transmitting area corresponds to the incomplete developing area and corresponds to an area where the negative photoresist is to be retained, part of the light-transmitting area corresponds to the incomplete developing area and corresponds to an area where part of the negative photoresist is to be removed, and the light-shielding area corresponds to the developing area and corresponds to an area where the negative photoresist is to be removed.

In the present application, taking coating of a positive photoresist as an example, after exposing and developing the photoresist a through a half-gray mask B, the upper portion of the photoresist on the touch electrode area (touch electrode 32) and the photoresist on the active area are removed by using a developing area, and the photoresist on the non-touch electrode area and the photoresist on the non-active area are removed by using the photoresist on the active layer 31 (active area) remained by a non-developing area. Touch control electrode area (touch control electrode 32)The upper portion of the photoresist on top can protect the touch electrode area from being etched during the process of etching the excess active layer. Note that the non-touch electrode region and the non-active region refer to regions on the active layer excluding the touch electrode region and the active region. And then, etching and removing the non-touch electrode area and the active layer on the non-active area by taking the photoresist as a mask. Then, the lower portion of the photoresist covering the touch electrode region (touch electrode 32) is etched away by ashing treatment for exposing and then conducting. The implementation of the conductimerization may be doping or Treatment. Such as doping: and injecting Al, In, Ga and the like into the oxide semiconductor by adopting an ion injection mode. Due to the injection of metal ions, the number of majority carriers in the transparent oxide film can be increased, the mobility of the majority carriers is improved, the resistivity is reduced, the conductor (or the conduction) is realized, and the conductive property is enhanced. Most of the carriers of the oxide semiconductor function as electrons, and the transport ability of electrons is higher than that of holes. Such as Treatment: as a treatment, a plasma is generally used for surface treatment, such as NO₂、O₂And H₂And the movable electrons of the transparent oxide are increased, so that the resistivity of the film layer is reduced, and the conductive property is enhanced. After the conductor is formed, a transparent touch electrode 32 is formed in the touch electrode area, and finally the photoresist a covering the active layer 31 (active area) is removed.

Referring to fig. 3, 4 and 5, further, in order to reduce the contact resistance between the active layer 31 and the source/drain contact region, the source/drain contact region on the active layer 31 is also conducted with a conductor; before the conductor is formed, when the active layer material 3 is exposed and developed, the upper part of the photoresist a of the source/drain contact region is removed by using a part of the light-transmitting region of the half-gray-scale mask B, and the photoresist of the region of the active layer 31 other than the source/drain contact region is retained by using the light-shielding region of the half-gray-scale mask B, and the structure is as shown in fig. 3. The ashing process is also used to remove the lower portion of the photoresist a in the source/drain contact region for exposing the post-conductor, and then for connecting the source 71 or the drain 72, as shown in fig. 4 and 5.

Wherein the ashing is performed by using O as a plasma processor₂Or otherwise haveAnd removing the upper part of the photoresist on the source and drain contact region by plasma with similar characteristics. The two side regions on the active layer are used for being connected with the source electrode or the drain electrode after being subjected to conductor processing, so that the contact resistance between the active layer and the source electrode and the drain electrode can be reduced, and the conductivity can be improved.

In the prior art, the cathode is reused as a touch electrode, so that the touch electrode has signal interference and is influenced by the evaporation precision of the OLED, and the manufacturing process is complex. According to the technical scheme, the touch electrode and the touch lead are arranged inside the OLED display device (on one side of the TFT), so that the thickness of the OLED display device can be reduced, the OLED display device is lighter and thinner, and the light transmittance of the OLED display device is not influenced. Compared with the technical scheme that the cathode is used as the touch electrode, the performance of the touch electrode is stable, and the manufacturing process is simple.

In order to protect the metal layer and avoid direct contact between other structures and the metal layer, a first insulating layer 4 may be formed on the active layer and the touch electrode; referring to fig. 6, in particular, an insulating material, such as nitride (silicon nitride, etc.), oxide (silicon oxide, silicon dioxide), or other insulating materials, may be plated on the active layer 31 and the touch electrode 32. Thereby forming the first insulating layer 4 on the active layer and the touch electrode, and the first insulating layer 4 plays a role of isolating the active layer 31 and the gate electrode 5.

After the first insulating layer is manufactured, manufacturing a grid electrode on the first insulating layer in the active layer area; referring to fig. 7, specifically, a photoresist is coated on the first insulating layer 4, and then the photoresist is patterned, i.e., the photoresist is exposed and developed, so that an area where a gate is to be formed is opened. Then plating a grid material, forming a grid 5 on the first insulating layer of the active layer region, and finally removing the photoresist. Gate materials such as one or more of metals having excellent conductivity, such as aluminum, molybdenum, titanium, nickel, copper, silver, chromium, and alloys thereof.

In order to protect the metal layer and avoid direct contact between other structures and the metal layer, a second insulating layer can be manufactured on the grid and the first insulating layer; referring to fig. 8, in particular, an insulating material, such as nitride (silicon nitride, etc.), oxide (silicon oxide, silicon dioxide) or other insulating materials, may be plated on the gate electrode 5 and the first insulating layer 4. Thereby forming a second insulating layer 6 on the gate electrode 5 and the first insulating layer 4, the second insulating layer 6 functioning to isolate the gate electrode 5 from other structures.

Respectively manufacturing through holes on the touch electrode 32 and the second insulating layer 6 in the source-drain contact area region, and using the through holes as connection points with the source-drain or the touch lead; referring to fig. 8, specifically, the via hole penetrates through the second insulating layer and the first insulating layer, and the bottom of the via hole is the surface of the touch electrode and the surface of the source/drain contact region, respectively. Note that, if the active layer is made conductive, the source/drain contact region is made conductive.

After the via hole is manufactured, manufacturing a source electrode 71, a drain electrode 72 and a touch lead 73 on the second insulating layer; referring to fig. 9, specifically, a photoresist is coated on the second insulating layer 6, and then the photoresist is patterned, that is, the photoresist is exposed and developed, so that the area where the source, the drain and the touch lead are to be fabricated is opened. Then, a metal material (source/drain material 7) such as one or more of metals with excellent conductivity, such as aluminum, molybdenum, titanium, nickel, copper, silver, chromium, and the like, and an alloy is plated. And forming a source electrode 71, a drain electrode 72 and a touch lead 73 at a plurality of via holes on the second insulating layer 6, and finally removing the photoresist. The source 71 and the drain 72 are respectively connected to the active layer 31 through via holes of the second insulating layer 6 on the source-drain contact region, and the touch lead 73 is connected to the touch electrode 32 through via holes of the second insulating layer 6 on the touch electrode 32. Note that the gate electrode, the source electrode, and the drain electrode are components of a Thin Film Transistor (TFT).

Referring to fig. 10, the display device layer 8, such as the third insulating layer 81 therein, may be formed on the source, the drain, and the touch lead, and the process for forming the third insulating layer 81 is the same as the process for forming the insulating layers; the third insulating layer 81 serves to isolate the contact of a lower Thin Film Transistor (TFT), a touch electrode, and a touch lead with an external structure. Generally, the third insulating layer 81 includes a passivation layer (PV) mainly functioning as an isolation and an organic insulating layer (OC) functioning as a level difference on the tiled substrate due to a plurality of processes. Alternatively, the thickness of the passivation layer may be increased instead of the organic insulating layer.

Referring to fig. 10, the process for fabricating the display device layer further includes forming a via hole in the third insulating layer 81, the via hole being connected to the drain electrode 72 and being used for connecting the drain electrode 72 to the anode 82. A transparent anode 82 is then formed on the third insulating layer 81, and the anode 82 is connected to the drain through a via in the third insulating layer 81. Transparent anodes 82 such as indium oxide or carbon nanotubes have similar properties. In some cases, the source 71 may be connected to the anode 82. After the anode 82 is formed, a pixel defining layer 83 is formed on the anode 82 and the third insulating layer 81, and a via hole is formed in the pixel defining layer 83, wherein the anode 82 is formed at the bottom of the via hole. An organic light emitting layer 84 is formed at the via hole of the pixel defining layer 83, and the organic light emitting layer 84 is connected to the anode 82 outside the via hole of the third insulating layer. Finally, a transparent cathode 85 is formed on the pixel defining layer 83 and the organic light emitting layer 84. The cathode 85 may be one or more metals of Al (aluminum), Ag (silver), Au (gold) of high reflectivity.

Generally, a pixel region C includes a touch electrode, a TFT (gate, source, drain), a touch wire, an insulating layer, an anode, a pixel defining layer, an organic light emitting layer, a cathode, and the like. Referring to fig. 11, 12 and 13, a plurality of pixel regions are formed on the substrate, and the plurality of pixel regions are arranged in an array to form a touch module. The pixel areas in each touch module are connected with each other through touch leads, and the touch leads are connected with the touch electrodes through insulating layer through holes. Specifically, the display area of the panel is divided into N (N is generally a positive integer) touch modules D, and the touch modules D are connected to the touch chip 9 through the touch leads 73 to be connected to the touch chip.

A touch chip 9 is disposed on one side of the plurality of pixel regions, and the touch chip 9 is a main part of the display screen. The touch chip 9 is responsible for driving the display and controlling the driving current, such as receiving and feeding back a touch signal through the touch lead 73.

In order to optimize the wiring of the touch lead, each touch module is connected to the touch chip through one touch lead, and the touch electrodes are in a grid shape. This can reduce the number of touch leads, thus not affecting the light transmittance of the transparent display. After the touch lead is reduced, the saved space can be used for arranging other routing wires.

The present embodiment provides an OLED display device, which can be manufactured by the method for manufacturing an OLED display device of the present embodiment, please refer to fig. 1 to 13. The method comprises the following steps: a pixel region, the pixel region comprising: referring to fig. 1, a buffer layer 2 is disposed on a substrate 1 to increase adhesion with an active layer. The buffer layer 2 is made of, for example, nitride (silicon nitride, etc.), oxide (silicon oxide, silicon dioxide), or other insulating material. Alternatively, the buffer layer 2 may be formed by directly providing the touch electrode and the active layer on the substrate without providing them.

Referring to fig. 5, an active layer 31 and a transparent touch electrode 32 are disposed on the buffer layer, and the active layer 31 may be transparent Indium Gallium Zinc Oxide (IGZO), transparent Indium Zinc Tin Oxide (IZTO), or transparent Indium Gallium Zinc Titanium Oxide (IGZTO), or other materials with similar characteristics. The touch electrode 32 is made of the same material as the active layer, is formed by conducting the active layer, and has transparent and conductive properties. The transparent touch electrode 32 may not affect the light transmittance of the transparent display, and maintain the high performance of the transparent display.

Furthermore, in order to reduce the contact resistance between the active layer and the source/drain contact region, the source/drain contact region on the active layer is designed to be a conductive structure, wherein the source/drain contact region is a region where the source (drain) is connected with the active layer. The conductive structure can improve the mobility of majority carriers, thereby reducing the resistivity and enhancing the conductive property.

In order to protect the metal layer and prevent other structures from directly contacting the metal layer, a first insulating layer 4 may be disposed on the active layer and the touch electrode; referring to fig. 6, in particular, the first insulating layer 4 is made of nitride (silicon nitride, etc.), oxide (silicon oxide, silicon dioxide) or other insulating materials. The first insulating layer 4 functions to isolate the active layer 31 and the gate electrode 5.

Referring to fig. 7, a gate electrode 5 is provided on the first insulating layer of the active layer region as a constituent of the TFT. The material of the gate 5 is one or more of metals having excellent conductivity, such as aluminum, molybdenum, titanium, nickel, copper, silver, chromium, and the like, and alloys thereof. Meanwhile, in order to protect the metal layer and prevent other structures from being in direct contact with the metal layer, a second insulating layer 6 is disposed on the gate electrode and the first insulating layer. The second insulating layer 6 is made of, for example, nitride (silicon nitride, etc.), oxide (silicon oxide, silicon dioxide), or other insulating material. The second insulating layer 6 serves as a connection for isolating the gate 5 from other structures.

Through holes are respectively arranged on the touch electrode 32 and the second insulating layer 6 in the active drain contact area region and are used as connection points with the source drain or the touch lead; referring to fig. 8, specifically, the via hole penetrates through the second insulating layer and the first insulating layer, and the bottom of the via hole is the surface of the touch electrode and the surface of the source/drain contact region, respectively. It should be noted that, if the active layer is made of a conductor, the active drain contact region is made of a conductor structure.

A source electrode, a drain electrode and a touch lead are arranged on the second insulating layer; referring to fig. 9, a source electrode 71, a drain electrode 72, and a touch lead 73 are disposed at a plurality of via holes on the second insulating layer 6, and a metal material (source/drain electrode material 7) such as one or more metals with excellent conductivity, such as aluminum, molybdenum, titanium, nickel, copper, silver, chromium, and alloys thereof is disposed. The electrode 71 and the drain 72 are respectively connected to the active layer 31 through a via hole of the second insulating layer 6 on the source-drain contact region, and the touch lead 73 is connected to the touch electrode 32 through a via hole of the second insulating layer 6 on the touch electrode 32. Note that the gate electrode, the source electrode, and the drain electrode are components of a Thin Film Transistor (TFT).

Referring to fig. 10, a display device layer 8, such as a third insulating layer 81, is disposed on the source, the drain, and the touch lead; the third insulating layer 81 serves to isolate the contact of a lower Thin Film Transistor (TFT), a touch electrode, and a touch lead with an external structure. Generally, the third insulating layer 81 includes a passivation layer (PV) mainly functioning as an isolation and an organic insulating layer (OC) functioning as a level difference on the tiled substrate due to a plurality of processes. Alternatively, the thickness of the passivation layer may be increased instead of the organic insulating layer.

Referring to fig. 10, the display device layer further includes a via hole disposed on the third insulating layer 81 and connected to the drain electrode 72, for connecting the drain electrode 72 and the anode 82. A transparent anode 82 is then provided on the third insulating layer 81, the anode 82 being connected to the drain through a via in the third insulating layer 81. Transparent anodes 82 such as indium oxide or carbon nanotubes have similar properties. In some cases, the source 71 may be connected to the anode 82. A pixel defining layer 83 is disposed on the anode 82 and the third insulating layer 81, and a via hole is disposed on the pixel defining layer 83, and the bottom of the via hole is the anode 82. An organic light emitting layer 84 is disposed at the via hole on the pixel defining layer 83, and the organic light emitting layer 84 is connected to the anode 82 outside the via hole on the third insulating layer. A transparent cathode 85 is disposed on the pixel defining layer 83 and the organic light emitting layer 84. The cathode 85 may be one or more metals of Al (aluminum), Ag (silver), Au (gold) of high reflectivity.

It should be noted that, although the above embodiments have been described herein, the invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed in the content of the present specification and the attached drawings, which are included in the scope of the present invention.

Claims

1. A manufacturing method of an OLED display device is characterized by comprising the following steps:

2. The method of claim 1, wherein an active layer material is deposited on a substrate, an active layer is formed on the substrate, the active layer is etched to obtain a touch electrode region and an active region, the touch electrode region is conducted to form a transparent touch electrode, and both sides of the active region are used as source and drain contact regions, and the method further comprises:

removing the lower part of the photoresist on the touch electrode area;

and removing the photoresist on the active region.

3. The method of claim 1, wherein an active layer material is deposited on a substrate, an active layer is formed on the substrate, the active layer is etched to obtain a touch electrode region and an active region, the touch electrode region is conducted to form a transparent touch electrode, and both sides of the active region are used as source and drain contact regions, and the method further comprises:

and removing the photoresist on the active region.

4. The method of claim 1, 2 or 3, wherein when the display device layer is formed on the second insulating layer, the source electrode, the drain electrode and the touch lead, the method further comprises:

5. The method of claim 1, wherein the number of the pixel regions is multiple, the pixel regions are arranged in an array to form a touch module, and the pixel regions on a line in each touch module are connected by a touch lead.

6. The method of claim 1, further comprising the steps of, before depositing the active layer material on the substrate:

7. An OLED display device, comprising: a pixel region, the pixel region comprising:

8. The OLED display device according to claim 7, wherein the number of the pixel regions is plural, the plurality of pixel regions are arranged in an array to form a touch module, and the pixel regions in a line of each touch module are connected to each other through a touch lead.

9. An OLED display device as claimed in claim 7 or 8, wherein the display device layer comprises:

a cathode is disposed on the organic light emitting layer.

10. An OLED display device as claimed in claim 7 wherein said active drain contact region is a conductive structure.