CN112002630A - Process for improving surface flatness of large-diameter semiconductor silicon wafer through thinning - Google Patents
Process for improving surface flatness of large-diameter semiconductor silicon wafer through thinning Download PDFInfo
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- CN112002630A CN112002630A CN202010391829.4A CN202010391829A CN112002630A CN 112002630 A CN112002630 A CN 112002630A CN 202010391829 A CN202010391829 A CN 202010391829A CN 112002630 A CN112002630 A CN 112002630A
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- 238000000034 method Methods 0.000 title claims abstract description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 47
- 239000010703 silicon Substances 0.000 title claims abstract description 47
- 230000008569 process Effects 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000004140 cleaning Methods 0.000 claims abstract description 30
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 28
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 28
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000002253 acid Substances 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 15
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 14
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 14
- 239000008367 deionised water Substances 0.000 claims abstract description 14
- 238000012545 processing Methods 0.000 claims abstract description 13
- 241001050985 Disco Species 0.000 claims abstract description 9
- 238000004458 analytical method Methods 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- 238000002156 mixing Methods 0.000 claims abstract description 5
- 238000003860 storage Methods 0.000 claims abstract description 5
- 238000005303 weighing Methods 0.000 claims abstract description 5
- 238000002474 experimental method Methods 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 8
- 238000000227 grinding Methods 0.000 claims description 8
- 229910001868 water Inorganic materials 0.000 claims description 8
- 239000003814 drug Substances 0.000 claims description 7
- 229940079593 drug Drugs 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- 238000004457 water analysis Methods 0.000 claims description 4
- 230000009471 action Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000013072 incoming material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a process for improving the surface flatness of a large-diameter semiconductor silicon wafer by thinning, which comprises the following steps: s1, firstly, weighing the 8-inch Czochralski acid etching silicon wafer, ammonia water, hydrochloric acid, hydrogen peroxide, hydrofluoric acid and deionized water according to the weight parts of the components, and placing the components in corresponding storage vessels for later use; s2, introducing the weighed and proportioned 8-inch straight-pull acid-etched silicon wafer, ammonia water, hydrochloric acid, hydrogen peroxide, hydrofluoric acid and deionized water into a mixing vessel for reaction, then performing single-side thinning processing by a DISCO single-side thinning machine, and cleaning the surface of the thinned silicon wafer by a thinning cleaning machine; and S3, finally, checking the surface flatness of the cleaned silicon wafer by ADE9600 equipment, then identifying and extracting relevant parameters of the silicon wafer, recording and comparing relevant observed and extracted data, and obtaining a corresponding experimental result through data comparison and analysis.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a process for thinning and improving the surface flatness of a large-diameter semiconductor silicon wafer.
Background
Surface flatness is an important characteristic parameter of a polished piece of monocrystalline silicon which is a raw material of a device. On one hand, the surface flatness of the silicon wafer is greatly improved by the surface grinding technology of the polishing process; on the other hand, the good surface flatness of the incoming material from the polishing process also improves the surface flatness after polishing.
The reason why the flatness of the 8-inch polishing sheet is poor when the material is supplied is as follows: (1) the flatness improving capability of the grinding process is insufficient; (2) the acid corrosion anisotropy causes large shape change and poor geometrical parameters such as TTV; initially, the TTV of the 8-inch polished wafer after thinning is controlled below 1, and the SBIR is not controlled by a card, which causes the polished surface to be not flat enough, and causes the polished surface to be unstable and local flatness to be poor.
Disclosure of Invention
The invention aims to provide a process for thinning and improving the surface flatness of a large-diameter semiconductor silicon wafer, which aims to solve the problem that the flatness of an 8-inch polished wafer is poor when the wafer is fed in the background technology as follows: (1) the flatness improving capability of the grinding process is insufficient; (2) the acid corrosion anisotropy causes large shape change and poor geometrical parameters such as TTV; initially, the TTV of the 8-inch polished wafer after thinning is controlled below 1, and the SBIR is not controlled by a card, which causes the polished surface to be not flat enough, resulting in unstable flatness after polishing and poor local flatness.
In order to achieve the purpose, the invention provides the following technical scheme: a process for thinning and improving the surface flatness of a large-diameter semiconductor silicon wafer is tested, and comprises the following steps:
s1, firstly, weighing the 8-inch Czochralski acid etching silicon wafer, ammonia water, hydrochloric acid, hydrogen peroxide, hydrofluoric acid and deionized water according to the weight parts of the components, and placing the components in corresponding storage vessels for later use;
s2, introducing the weighed and proportioned 8-inch straight-pull acid-etched silicon wafer, ammonia water, hydrochloric acid, hydrogen peroxide, hydrofluoric acid and deionized water into a mixing vessel for reaction, then performing single-side thinning processing by a DISCO single-side thinning machine, and cleaning the surface of the thinned silicon wafer by a thinning cleaning machine;
s3, finally, the cleaned silicon wafer is checked for surface flatness through ADE9600 equipment, then relevant parameters of the silicon wafer are identified and extracted, relevant data obtained through observation and extraction are recorded and compared, and corresponding experimental results are obtained through data comparison and analysis
Preferably, the thinning improved large-diameter semiconductor silicon wafer comprises the following experimental raw materials:
8-inch Czochralski acid etching silicon wafer: CZ;
grinding wheel: disco 5000# grindstone;
ammonia water analysis pure content: 28% -30%;
analytically pure content of hydrochloric acid: 35% -38%;
hydrogen peroxide analytically pure content: 30% -32%;
analytically pure concentration of hydrofluoric acid: 49 percent;
deionized water;
KILALA。
preferably, the method comprises an acid etching sheet processing technology, a thinning processing technology and a thinning cleaning technology.
Preferably, the thinning and cleaning process SC2 liquid medicine is prepared from HF: HCL: DIW 1: 1: 10, the experimental temperature can be determined according to actual conditions, and the experimental time is 250 sec.
Preferably, the ratios and the experiment temperatures of the thinning and cleaning process chemicals Rin #1, Rin # 2, QDR # 2 and F-Ring can be determined by adding and observing according to the real-time situation, and the experiment time is 250 sec.
Preferably, the proportion of the thinning and cleaning process liquid medicines SC1-1 and SC1-2 is NH 4. H2O: H2O 2: DIW 1: 1: 10 and the experimental temperature is 60 +/-5 ℃, and the experimental time is 250 sec.
Preferably, the Spin dry speed of the thinning and cleaning process is 400rpm +800rpm, the experiment temperature can be determined by adding and observing according to the real-time situation, and the experiment time is 10+200 sec.
Compared with the prior art, the invention has the beneficial effects that: the angle between the thinned Chuck Table and the grinding wheel is adjusted by adjusting the inclination angle adjusting device of the thinned Chuck Table according to the shape of the thinned product, so that the integral flatness and the local flatness of the thinned product are improved, and the optimization of the integral flatness and the local flatness of the product is realized.
Drawings
FIG. 1 is a data diagram of experimental results according to an embodiment of the present invention;
FIG. 2 is a box plot of a geometric parameter TTV according to an embodiment of the present invention;
FIG. 3 is a table of motor correction values according to an embodiment of the present invention;
FIG. 4 is a table of motor correction value data according to a second embodiment of the present invention;
FIG. 5 is a data chart of experimental results of a second embodiment of the present invention;
fig. 6 is a box plot of the second geometric parameter TTV of an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
the experimental process of this example includes the following steps:
s1, firstly, weighing the 8-inch Czochralski acid etching silicon wafer, ammonia water, hydrochloric acid, hydrogen peroxide, hydrofluoric acid and deionized water according to the weight parts of the components, and placing the components in corresponding storage vessels for later use.
S2, guiding the weighed and proportioned 8-inch straight-pull acid etching silicon wafer, ammonia water, hydrochloric acid, hydrogen peroxide, hydrofluoric acid and deionized water into a mixing vessel for reaction, then performing single-side thinning processing through a DISCO single-side thinning machine, and cleaning the surface of the thinned silicon wafer through a thinning cleaning machine.
And S3, finally, checking the surface flatness of the cleaned silicon wafer by ADE9600 equipment, then identifying and extracting relevant parameters of the silicon wafer, recording and comparing relevant observed and extracted data, and obtaining a corresponding experimental result through data comparison and analysis.
In this embodiment, an experimental raw material composition for thinning an improved large-diameter semiconductor silicon wafer is as follows:
8-inch Czochralski acid etching silicon wafer: CZ;
grinding wheel: disco 5000# grindstone;
ammonia water analysis pure content: 28% -30%;
analytically pure content of hydrochloric acid: 35% -38%;
hydrogen peroxide analytically pure content: 30% -32%;
analytically pure concentration of hydrofluoric acid: 49 percent;
deionized water;
KILALA。
in this embodiment, the method includes an acid etching sheet processing process, a thinning processing process, and a thinning cleaning process.
In this embodiment, the ratio of the liquid SC2 in the thinning cleaning process is HF: HCL: DIW 1: 1: 10, the experimental temperature can be determined according to actual conditions, and the experimental time is 250 sec.
In this embodiment, the ratios and the experimental temperatures of the thinning and cleaning process chemicals Rin #1, Rin # 2, QDR # 2 and F-ring can be determined by adding and observing according to the real-time conditions, and the experimental time is 250 sec.
In the embodiment, the proportion of the thinning and cleaning process liquid medicines SC1-1 and SC1-2 is NH 4. H2O: H2O 2: DIW 1: 1: 10 and the experimental temperature is 60 +/-5 ℃, and the experimental time is 250 sec.
In this embodiment, the Spin dry speed of the thinning cleaning process is 400rpm +800rpm, the experiment temperature can be determined by adding and observing according to the real-time condition, and the experiment time is 10+200 sec.
Experimental results show that the TTV is controlled to be below 0.5 mu m, the SBIR is controlled to be about 0.2 mu m, and the surface flatness of the 8-inch thinning sheet is effectively improved.
Example two:
the difference characteristic from the first embodiment is that:
the experimental process of this example includes the following steps:
s1, firstly, weighing the 8-inch Czochralski acid etching silicon wafer, ammonia water, hydrochloric acid, hydrogen peroxide, hydrofluoric acid and deionized water according to the weight parts of the components, and placing the components in corresponding storage vessels for later use.
S2, guiding the weighed and proportioned 8-inch straight-pull acid etching silicon wafer, ammonia water, hydrochloric acid, hydrogen peroxide, hydrofluoric acid and deionized water into a mixing vessel for reaction, then performing single-side thinning processing through a DISCO single-side thinning machine, and cleaning the surface of the thinned silicon wafer through a thinning cleaning machine.
And S3, finally, checking the surface flatness of the cleaned silicon wafer by ADE9600 equipment, then identifying and extracting relevant parameters of the silicon wafer, recording and comparing relevant observed and extracted data, and obtaining a corresponding experimental result through data comparison and analysis.
In this embodiment, an experimental raw material composition for thinning an improved large-diameter semiconductor silicon wafer is as follows:
8-inch Czochralski acid etching silicon wafer: CZ;
grinding wheel: disco 5000# grindstone;
ammonia water analysis pure content: 28% -30%;
analytically pure content of hydrochloric acid: 35% -38%;
hydrogen peroxide analytically pure content: 30% -32%;
analytically pure concentration of hydrofluoric acid: 49 percent;
deionized water;
KILALA。
in this embodiment, the method includes an acid etching sheet processing process, a thinning processing process, and a thinning cleaning process.
In this embodiment, the ratio of the liquid SC2 in the thinning cleaning process is HF: HCL: DIW 1: 1: 10, the experimental temperature can be determined according to actual conditions, and the experimental time is 250 sec.
In this embodiment, the ratios and the experimental temperatures of the thinning and cleaning process chemicals Rin # 1, Rin # 2, QDR # 2 and F-ring can be determined by adding and observing according to the real-time conditions, and the experimental time is 250 sec.
In the embodiment, the proportion of the thinning and cleaning process liquid medicines SC1-1 and SC1-2 is NH 4. H2O: H2O 2: DIW 1: 1: 10 and the experimental temperature is 60 +/-5 ℃, and the experimental time is 250 sec.
In this embodiment, the Spin dry speed of the thinning cleaning process is 400rpm +800rpm, the experiment temperature can be determined by adding and observing according to the real-time condition, and the experiment time is 10+200 sec.
In summary, the following steps: compared with the experimental results of the original process in the second embodiment, the experimental process disclosed by the embodiment of the invention has the advantages that the TTV is controlled to be below 0.5 mu m, the SBIR is controlled to be about 0.2 mu m, and the surface flatness of the 8-inch thinning sheet is effectively improved, so that the effect of the invention is better than that of the original process.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. A process for thinning and improving the surface flatness of a large-diameter semiconductor silicon wafer is characterized by comprising the following steps: the experimental process comprises the following steps:
s1, firstly, weighing the 8-inch Czochralski acid etching silicon wafer, ammonia water, hydrochloric acid, hydrogen peroxide, hydrofluoric acid and deionized water according to the weight parts of the components, and placing the components in corresponding storage vessels for later use;
s2, introducing the weighed and proportioned 8-inch straight-pull acid-etched silicon wafer, ammonia water, hydrochloric acid, hydrogen peroxide, hydrofluoric acid and deionized water into a mixing vessel for reaction, then performing single-side thinning processing by a DISCO single-side thinning machine, and cleaning the surface of the thinned silicon wafer by a thinning cleaning machine;
and S3, finally, checking the surface flatness of the cleaned silicon wafer by ADE9600 equipment, then identifying and extracting relevant parameters of the silicon wafer, recording and comparing relevant observed and extracted data, and obtaining a corresponding experimental result through data comparison and analysis.
2. A kind of thinning improves the major diameter semiconductor silicon chip, characterized by: the experimental raw materials for thinning and improving the large-diameter semiconductor silicon wafer comprise:
8-inch Czochralski acid etching silicon wafer: CZ;
grinding wheel: disco 5000# grindstone;
ammonia water analysis pure content: 28% -30%;
analytically pure content of hydrochloric acid: 35% -38%;
hydrogen peroxide analytically pure content: 30% -32%;
analytically pure concentration of hydrofluoric acid: 49 percent;
deionized water;
KILALA。
3. the thinned and improved large-diameter semiconductor silicon wafer as set forth in claim 1, wherein: the method comprises an acid etching sheet processing technology, a thinning processing technology and a thinning cleaning technology.
4. The thinned and improved large-diameter semiconductor silicon wafer according to claim 2, wherein: the thinning and cleaning process SC2 liquid medicine comprises the following components in percentage by weight: HCL: DIW 1: 1: 10, the experimental temperature can be determined according to actual conditions, and the experimental time is 250 sec.
5. The thinned and improved large-diameter semiconductor silicon wafer according to claim 2, wherein: the ratios and the experimental temperatures of the thinning and cleaning process liquid medicines Rin #1, Rin #2, QDR #2 and F-Ring can be added and observed according to the real-time condition, and the experimental time is 250 sec.
6. The process of claim 5 for improving the surface flatness of a large-diameter semiconductor silicon wafer by thinning, wherein the process comprises the following steps: the proportion of thinning and cleaning process liquid medicines SC1-1 and SC1-2 is NH 4. H2O: H2O 2: DIW 1: 1: 10 and the experimental temperature is 60 +/-5 ℃, and the experimental time is 250 sec.
7. The process of claim 5 for improving the surface flatness of a large-diameter semiconductor silicon wafer by thinning, wherein the process comprises the following steps: the Spin Dry rotating speed of the thinning and cleaning process is 400rpm +800rpm, the experiment temperature can be determined by adding and observing according to the real-time situation, and the experiment time is 10+200 sec.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0817776A (en) * | 1994-07-01 | 1996-01-19 | Mitsubishi Materials Shilicon Corp | Method for washing silicon wafer |
| JP2000243731A (en) * | 1999-02-18 | 2000-09-08 | Mitsubishi Materials Silicon Corp | Manufacture of high-flatness wafer |
| CN109742013A (en) * | 2018-12-20 | 2019-05-10 | 天津中环领先材料技术有限公司 | A kind of cleaning method reducing silicon chip back side metal |
| CN110010458A (en) * | 2019-04-01 | 2019-07-12 | 徐州鑫晶半导体科技有限公司 | Control the method and semiconductor wafer of semiconductor crystal wafer surface topography |
| CN110718457A (en) * | 2019-09-26 | 2020-01-21 | 天津中环领先材料技术有限公司 | Machining process for reducing zone-melting POLY back-sealed single polished wafer edge crystal hole |
-
2020
- 2020-05-11 CN CN202010391829.4A patent/CN112002630A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0817776A (en) * | 1994-07-01 | 1996-01-19 | Mitsubishi Materials Shilicon Corp | Method for washing silicon wafer |
| JP2000243731A (en) * | 1999-02-18 | 2000-09-08 | Mitsubishi Materials Silicon Corp | Manufacture of high-flatness wafer |
| CN109742013A (en) * | 2018-12-20 | 2019-05-10 | 天津中环领先材料技术有限公司 | A kind of cleaning method reducing silicon chip back side metal |
| CN110010458A (en) * | 2019-04-01 | 2019-07-12 | 徐州鑫晶半导体科技有限公司 | Control the method and semiconductor wafer of semiconductor crystal wafer surface topography |
| CN110718457A (en) * | 2019-09-26 | 2020-01-21 | 天津中环领先材料技术有限公司 | Machining process for reducing zone-melting POLY back-sealed single polished wafer edge crystal hole |
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