1338930 九、發明說明： 【發明所屬之技術領域】 本發明係有關半導體基板的品質評價方法，尤有關對 因金屬料致的基板㈣㈣行評價的方法。更且，本發 系有關藉由利用前述品質評價方法而判定良品，而可提 供高品質半導體基板的半導體基板之製造方法。 【先前技術】 作為矽磊晶晶圓或鏡面拋光（mirr〇r finish)晶圓等的 时質_價方法’已提案有—種將半導體基板表面中之由異 物檢查裝置所檢測的亮點予以觀察的檢查方法。於該檢查 方法中，係將基板上的粒子或COP(Crystal Originated particles，起因於結晶之微粒）、轉位等起因於基板結晶品 質的各種表面坑（pit)作為亮點而予以檢測出。因基板上的 粒子會被觀察為凸狀、表面坑會被觀察為凹狀，故對於起 因於粒子及表面坑的亮點，可將其原因進行某種程度的特 •定。 另一方面，鏡片拋光晶圓在鏡面研磨中所使用的漿體 裡所含有的金屬離子會在鏡面研磨加工中擴散到晶圓内， 而有混入表面附近的塊體（bulk)的問題存在。如上所述被 金屬污染的晶圓，在表面會產生結晶缺陷和表面粗糙，而 造成品質降低。因此，將存在於半導體基板表面附近的塊 體中的各種金屬雜質之元素種類予以特定之技術手段會 成為將其發生原因究明的線索，進而有助於製程的改益 但是，該等因金屬污染所造成的結晶缺陷和表面粗糖:由 319195 5 明8930 凹凸，因此在使用通常的異物檢 其檢測為亮點，而有將其視為户 於不會於基板表面顯現為 查裝置的檢查中並無法將 品並予以出貨之虞。 因此，已提案有一種藉由將洗淨後的基板表面之哀驻 的形狀以異物檢查裝置進行觀察，並將上述形狀與使已: 的重金屬擴散且洗淨後的參照晶圓上之亮點形狀進行比 車又，而將基板表面附近之塊體中的污染金屬種類予以特定 的方法（曰本特開2_·193597號公報）。但是，於前述公 所記載的方法，因為需要所謂觀察各亮點之形狀、再與 s曰圓之焭點形狀進行比較的繁雜步驟，故有評價需要 .長時間，而缺乏實用性的問題存在。 (專利文獻1)日本特開2000-193597號公報 【發明内容】 (發明所欲解決的課題） 首於該狀況下，本發明之目的為提供一種實用性佳的半 體基板之品質評價方法。 (解決課題的手段） 達成前述目的之手段，係如以下所述： (1) 一種半導體基板之品質評價方法，係含有： 對半導體基板表面進行蝕刻的步驟；以及 ^藉由異物檢查裝置將前述蝕刻後的基板表面中的 亮點予以檢測的步驟； 其中，前述蝕刻係藉由乾蝕刻而進行； 且根據前述所檢測的亮點之數量及/或分佈圖案而 319195 6 1338930 . 評價將前述半導體基板的品質。 :⑺=)所記载之半導體基板的品質評價方法，其中 0二1 t質係指金4污染之有無及/或其程度。 …含有藉：:隹所5己载的+導體基板的品質評價方法，復白 二有藉由進行前述所檢測出的亮點之元素分將= I於基板的污染金叙種㈣則找的步驟。、匕 —種半導體基板之品fff價方法，係含有： φ f半導體基板表面進行钱刻的步驟；以及 藉由異物檢查裝置將前述蝕刻 允點予以檢測的步驟； ^ 的 其中，前述蝕刻係藉由乾蝕刻而進行； _種類前述所評價的品質係指包含於基板的污染金屬之 =進行前述所檢測㈣亮點之元素 則述巧染金屬之種類。 饤疋 (5) Π戈⑷所記載的半導體基板的品質評價方法，其 電子素分析係使用掃描型電子顯微鏡或穿透型 ⑹如/鏡與能量分散型Χ線分光分析而進行。 方法1)至i5 )中任一項所記載的半導體基板的品質評價 基板表面進中行前述乾㈣係於已施行熱處理的半導體 (7) 裁之半導體基板的品質評價方法，其中，前 ⑻如⑴二;：⑽：】戰之範圍的溫度進行。 任一項所記載的半導體基板的品質評價 319195 7 1338930 ' ’其巾’係於前述半導體基板表面形成氧化膜， 且將該氧化膜剝離後再進行前述乾蝕刻。 (9) 如⑴至⑻中任__項所記載的半導體基板的品質評價 方法，其中，冑述半導體基板係為於表面施有鏡面加 工的矽晶圓。 (10) —種半導體基板的製造方法，係包含有： 準備由複數個半導體基板構成的半導體基板之批 量（lot)的步驟； 鲁 從前述批量中至少抽出1個半導體基板的步驟； 對則述所抽出的半導體基板之品質進行評價 驟； 2由則述品質評價判定為良品的半導體基板與同 批置内之其他半導體基板作為製品基板而出貨的步 驟； ^其中’前述所抽出的半導體基板之品質評價，係 • 彳木用如（1)至（9)中任一項所記載的半導體基板之品質 §平價方法而進行者。 (發明效果） 藉由本發明，可容易且正確地將包含於基板的污染金 屬種類子* iii ^ 符疋°藉此’依據本發明即可提供高品質的製 品基板。 【實施方式】 以下針對本發明更詳細的進行說明。 #發明之半導體基本品質評價方法，係包含2種態樣。 8 319195 1338930 任一種態樣皆為包含有對半導體基板表面進行蝕刻的 步驟、及以異物檢查裝置將前述蝕刻後的基板表面中的亮 點予以檢測的步驟的半導體基板之品質評價方法，其中， 以乾蝕刻進行前述蝕刻。濕蝕刻後於基板表面所檢測出的 亮點，係焭點被去除後的痕跡，亦即為凹形狀。另一方面， 若以乾蝕刻進行，亮點周圍的基板（矽基板時為矽）會被蝕 刻’冗點本身難以被餘刻而會殘留。 然後，第一態樣（以下稱為「方法1」）中，係根據前述 •所檢測的亮點之數量及/或分佈圖案而對前述半導體基板 之品質進行評價。另一方面，第二態樣（以下稱為「方法2」) 中，前述所評價的品質，係被包含於基板的污染金屬之種 類，前述污染金屬之種類，係藉由進行前述所檢測的亮點 之元素分析而加以特定。 第一態樣中’根據在乾蝕刻後的基板表面中所檢測的 亮點之數量及/或分佈圖案，可以評價基板表面及/或表面 籲附近的金屬污染之有無和程度。此乃因藉由乾蝕刻，存在 於基板表面及表面附近的污染金屬在蝕刻後也不會從基板 脫落而會殘存於钱刻面的緣故。 另方面，根據第一態樣，可以將包含於基板的污染 金屬之種類予以特定。此乃因藉由以乾蝕刻進行基板之蝕 ，，如上所述基板中的污染金屬在蝕刻後也不會從基板脫 落而會殘存於蝕刻面的緣故。如上所述殘存、露出於蝕刻 面的金屬雜質則會由異物檢查裝置檢測為亮點。然後藉由 進行前述所檢測的亮點之元素分析，可容易且正確地特定 319195 9 1338930 ，污染金屬的種類。如上所述，將污染金屬種類予以正媒地 •特定，對於製程中的污染原因之特定以及製程之改善是非 常有益的。 曰在本發明中進行品質評價的半導體基板，例如為衫 晶體晶圓、將石夕晶圓鏡面加工所得的製品晶圓、或將鏡面 =工後的；^ BS圓在氫氣壤境或氩氣環境中熱處理後的製品 日日圓。尤其’本發明之品質評價方法’係對於起因於鏡面 φ研磨時所使㈣漿體所包含的金屬離子在基板中擴散而存 在於基板表面附近的塊體中的污染金屬種類之特定是有效 的。從而，較佳為將本發明之品質評價方法適用於對表面 施加鏡面加工後的矽晶圓。 不。《β在方法1、方法2之任一者中，蝕刻皆係以乾蝕 刻進行。乾蝕刻係可使用公知的方法，例如反應性離子蝕 刻（Reactive Ion Etching ; RIE)、電漿蝕刻等。電漿蝕刻係 例如可使用電子迴旋共振式（Electron Cyclotron Resonanee) 籲電㈣刻裝置進行度雖亦可適當設定，但為了評 偏存在於基板表面或表面附近的塊體的金屬污染之有無和 私度，故以设為〇. 1至0 5 # m為佳。蝕刻條件係可因應所 期望的蝕刻深度而適當進行設定。 月’J述乾#刻雖可於作為品質評價對象的基板表面直接 進仃，但較佳為於蝕刻前在基板表面進行熱處理。藉由該 熱處理，因包含於塊體中的雜質金屬會移動到表面附近， 故可以用較少的钱刻量將塊體中的污染金屬種類予以特 定。 10 319195 1338930 前述熱處理之條件，係因絲板污㈣度而進行設定 為4 。熱處理溫度係例如可以設為1〇〇至12〇〇。匸、熱产理 二分至2小時間。此外’前述熱處理係於非氧：：氣 體=下’例如氮氣環境下、氬氣環境下、氫氣環境下進 仃孕父佳。 ，此外，本發明中’亦可在評價對象的半導體基板之表 =形成氧化膜，且將該氧化膜㈣後再進行前述乾钱刻。 :此，剝離時污染原因物質會被去除而留下凹狀的痕跡， 行乾钱刻使凹部的大小擴大，而有易於利用異物 私一裝置進行壳點之檢測的優點。 二，氧化膜的形成，係例如可藉由800至i〇〇(rc左右 的乾燥乳化或濕氧化而進行。所形成的氧化膜之剝離，係 例如可利用氟酸水溶液進行。氟酸水溶液之濃度係以〇 $ 至5體積％較佳。 · 、接著，針對方法1、方法”的品質評價之詳細進 |說明。 、方法1係於如上所述進行乾蝕刻後的基板表面中，在 =物檢查裝置騎亮點之檢測後，根據所檢測的亮點之 及/或分佈圖案而對基板之品質進行則賈。藉由方法 可^價因金相導致之污染时無及/或其程度，更具 汰而P可以砰鉍基板表面及/或存在於表面附近的金屬污 :之有無及/或其程度。例如，若所檢測出的亮點數量越 則可，定其有重度的金屬污染。此外，在面内之一部 U 7Γ有冗點⑧、集的異常分布圖案時，可判定其為有金屬 319195 1-338930 污染。更且’攸免點之分布圖宏. 原因。例如，若亮點之分布斷出污染的產生 拉晶（crystal pulling)時的污染:、:5二狀’則可推斷為 圖案，則可推斷其為來自熱處理板：：：：特徵性的 檢查裝置之接觸的污染。 4之板的^或起因於與 猎由進行 污染金屬 又，於方法1中也與後述的方法2同樣地， 所檢測的亮點之元素分析，可以將包含於基板的 之種類予以特定。 翬另一方面’方法2係藉由於乾钱刻後的基板表面中進 行由異物檢查裝置所檢測的亮點之元素分析，將包含於基 板的污染金屬之種類予以特定。前述元素分析係可藉由择 描型顯微鏡（随)或穿透型電子顯微鏡（TEM)觀察亮點，並 於該亮點中藉由能量分散型x>線分光分析而進行。於方法 2中，由於係採用乾蝕刻作為蝕刻方法，於蝕刻後金屬雜 質也不會從基板脫落而會殘留，因此可進行如上所述的元 0素分析。 此外，於方法2中，亦可與以前述元素分析而進行的 污染金屬種類特定並行，和前述方法丨同樣地根據由異物 铋查裝置所檢測的亮點之數量及/或分佈圖案而將基板之 品質加以評價。 再者’本發明係有關於半導體基板之製造方法。 本發明之半導體基板之製造方法係包含： 準備由複數個半導體基板構成的半導體基板之批量的 步驟； 12 319195 1338930 中至少抽出1個半導體基板的步t 賴“半導體基板之品f進行評㈣步驟’· 將由則述品質評價判定為良 詈内之並柚主道规甘t L 卞守篮悬板與同一批 —…+導體基板作為製品基板而 且前述所抽出的半導體基板之品質評價，係採=、求 之本發明的半導體基板之品f評價方法而進行者。n 如前所述，藉由本發明之半導體基板的 一法接可以評價金屬污染之有無及/或其程度、特定污心： 之：類、進而推斷污染的產生原因。從1338930 IX. Description of the Invention: [Technical Field] The present invention relates to a method for evaluating the quality of a semiconductor substrate, and more particularly to a method for evaluating a substrate (4) (4) due to a metal material. Furthermore, the present invention relates to a method of manufacturing a semiconductor substrate which can provide a high-quality semiconductor substrate by using the above-described quality evaluation method to determine a good product. [Prior Art] As a time-quality method for a germanium epitaxial wafer or a mirror-finished wafer, a bright spot detected by a foreign matter inspection device on the surface of a semiconductor substrate has been proposed. Inspection method. In this inspection method, various surface pits such as particles on the substrate, COP (Crystal Originated particles), and indexing, which are caused by the crystal quality of the substrate, are detected as bright spots. Since the particles on the substrate are observed to be convex and the surface pits are observed to be concave, the cause of the particles and the surface pits can be somewhat determined. On the other hand, the metal ions contained in the slurry used for the mirror polishing of the lens-polished wafer are diffused into the wafer during the mirror polishing process, and there is a problem that a bulk is mixed in the vicinity of the surface. A wafer contaminated with metal as described above causes crystal defects and surface roughness on the surface, resulting in deterioration in quality. Therefore, the technical means for specifying the element types of various metal impurities present in the block near the surface of the semiconductor substrate may become a clue to the cause of the occurrence, thereby contributing to the improvement of the process, but the metal pollution The resulting crystal defects and surface raw sugar: from 319195 5 to 8930 concave and convex, so it is detected as a bright spot by using the usual foreign matter inspection, and it is not possible to treat it as an inspection that does not appear on the surface of the substrate as a device. The product will be shipped and shipped. Therefore, it has been proposed to observe the shape of the surface of the substrate after washing by the foreign matter inspection device, and to form the bright spot shape on the reference wafer after the shape and the heavy metal have been diffused and washed. A method of specifying a type of contaminated metal in a block near the surface of the substrate is performed in comparison with the vehicle (Japanese Patent Laid-Open Publication No. Hei 2--193597). However, in the method described in the above-mentioned publication, since it is necessary to perform a complicated step of observing the shape of each bright spot and comparing it with the shape of the 曰 曰 circle, it is necessary to evaluate it. For a long time, there is a problem of lack of practicality. [Problem to be Solved by the Invention] In the first place, it is an object of the present invention to provide a method for evaluating the quality of a semiconductor substrate which is excellent in practical use. (Means for Solving the Problem) The means for achieving the above object is as follows: (1) A method for evaluating a quality of a semiconductor substrate, comprising: a step of etching a surface of a semiconductor substrate; and a step of detecting a bright spot in the surface of the substrate after etching; wherein the etching is performed by dry etching; and according to the number and/or distribution pattern of the detected bright spots, 319195 6 1338930. quality. (7) =) The quality evaluation method of the semiconductor substrate described in the above, wherein the 0 2 1 t quality refers to the presence or absence of the gold 4 contamination and/or the extent thereof. ...including the method of evaluating the quality of the +conductor substrate carried by the sputum:5, and the step of finding the element of the bright spot detected by the above-mentioned sputum . And a method for ff price of a semiconductor substrate, comprising: a step of performing etching on the surface of the φ f semiconductor substrate; and a step of detecting the etching allowance by a foreign matter inspection device; ^ wherein the etching is performed It is carried out by dry etching; _Type The quality evaluated above refers to the type of contaminated metal contained in the substrate = the element which performs the above-mentioned detected (four) bright spots, and the type of the metal is described. (5) The method for evaluating the quality of a semiconductor substrate described in (4), wherein the electron spectroscopy is performed using a scanning electron microscope or a transmission type (6)/mirror and energy dispersion type 分 line spectroscopic analysis. The quality evaluation substrate of the semiconductor substrate according to any one of the methods 1) to 5, wherein the surface of the substrate is in the middle of the semiconductor (7) is a quality evaluation method of the semiconductor substrate (7), wherein the first (8) is as in (1) Two;: (10): The temperature of the range of the war is carried out. The quality evaluation of the semiconductor substrate described in any one of the claims 319195 7 1338930 ''s'' is formed by forming an oxide film on the surface of the semiconductor substrate, and peeling off the oxide film, followed by dry etching. (9) The method for evaluating the quality of a semiconductor substrate according to any one of (1) to (8), wherein the semiconductor substrate is a germanium wafer having a mirror-finished surface. (10) A method of manufacturing a semiconductor substrate, comprising: a step of preparing a lot of a semiconductor substrate composed of a plurality of semiconductor substrates; and a step of extracting at least one semiconductor substrate from the plurality of batches; Evaluation of the quality of the extracted semiconductor substrate; 2, the step of shipping the semiconductor substrate determined to be good by quality evaluation and the other semiconductor substrate in the same batch as a product substrate; ^ wherein the above-mentioned extracted semiconductor substrate The quality evaluation is carried out by using the quality § parity method of the semiconductor substrate as described in any one of (1) to (9). (Effect of the Invention) According to the present invention, the contaminated metal species included in the substrate can be easily and accurately obtained. Thus, according to the present invention, a high-quality product substrate can be provided. [Embodiment] Hereinafter, the present invention will be described in more detail. The invention's basic quality evaluation method for semiconductors includes two aspects. 8 319195 1338930 Any of the aspects including a step of etching a surface of a semiconductor substrate and a method of evaluating a quality of a semiconductor substrate by a foreign matter inspection device for detecting a bright spot on the surface of the substrate after etching; The etching is performed by dry etching. The bright spots detected on the surface of the substrate after wet etching are traces after the defects are removed, that is, concave shapes. On the other hand, if dry etching is performed, the substrate around the bright spot (the 矽 is 矽 when the substrate is etched) is etched. The redundant point itself is hard to be left and remains. Then, in the first aspect (hereinafter referred to as "method 1"), the quality of the semiconductor substrate is evaluated based on the number of the bright spots detected and/or the distribution pattern. On the other hand, in the second aspect (hereinafter referred to as "method 2"), the quality evaluated as described above is the type of contaminated metal contained in the substrate, and the type of the contaminated metal is detected by the above-described detection. The elemental analysis of the highlights is specified. In the first aspect, the presence or absence of metal contamination near the surface of the substrate and/or the surface of the substrate can be evaluated based on the number and/or distribution pattern of bright spots detected in the surface of the substrate after dry etching. This is because the dry metal is present on the surface of the substrate and in the vicinity of the surface, and the contaminated metal does not fall off the substrate after etching, and remains in the facet. On the other hand, according to the first aspect, the kind of the contaminated metal contained in the substrate can be specified. This is because the substrate is etched by dry etching, and as described above, the contaminated metal in the substrate does not fall off the substrate after etching, and remains on the etched surface. The metal impurities remaining as described above and exposed on the etching surface are detected as bright spots by the foreign matter inspection device. Then, by performing elemental analysis of the above-described detected bright spots, it is possible to easily and correctly specify 319195 9 1338930, the type of contaminated metal. As mentioned above, the specificity of the contaminated metal species is specific, and the specificity of the pollution causes in the process and the improvement of the process are very beneficial. The semiconductor substrate for quality evaluation in the present invention is, for example, a shirt crystal wafer, a product wafer obtained by mirror-finishing a stone wafer, or a mirror surface = after-work; ^ BS round in hydrogen soil or argon gas Product heat-treated products in the environment. In particular, the "quality evaluation method of the present invention" is effective for specifying the type of contaminating metal present in the block near the surface of the substrate due to diffusion of metal ions contained in the (4) slurry during the mirror φ polishing. . Therefore, it is preferable to apply the quality evaluation method of the present invention to a tantalum wafer after mirror-finishing the surface. Do not. <<β In either of Method 1 and Method 2, the etching is performed by dry etching. A known method such as reactive ion etching (RIE), plasma etching, or the like can be used for the dry etching. For the plasma etching system, for example, an electron cyclotron resonance type (Electron Cyclotron Resonanee) can be used, and the degree of the device can be appropriately set, but in order to evaluate the presence or absence of metal contamination of the block existing on the surface of the substrate or near the surface. Degree, so set to 〇. 1 to 0 5 # m is better. The etching conditions can be appropriately set in accordance with the desired etching depth. Although it is possible to directly advance the surface of the substrate as the object of quality evaluation, it is preferable to heat-treat the surface of the substrate before etching. By this heat treatment, since the impurity metal contained in the block moves to the vicinity of the surface, the type of the contaminated metal in the block can be specified with a small amount of money. 10 319195 1338930 The conditions of the above heat treatment were set to 4 due to the degree of fouling of the wire. The heat treatment temperature can be, for example, from 1 Torr to 12 Torr.匸, heat production 2 minutes to 2 hours. Further, the aforementioned heat treatment is carried out in a non-oxygen:: gas = lower, for example, under a nitrogen atmosphere, an argon atmosphere, or a hydrogen atmosphere. Further, in the present invention, the oxide film may be formed on the surface of the semiconductor substrate to be evaluated, and the oxide film (4) may be subjected to the above-described dry etching. : In this case, the substance causing the contamination is removed during the peeling to leave a concave mark, and the dry money is used to enlarge the size of the concave portion, and there is an advantage that the detection of the shell point by the foreign device is easy. Second, the formation of the oxide film can be carried out, for example, by dry emulsification or wet oxidation of about 800 rpm. The peeling of the formed oxide film can be carried out, for example, by using a hydrofluoric acid aqueous solution. The concentration is preferably from 〇$ to 5% by volume. · Then, the quality evaluation of the method and the method is described in detail. The method 1 is performed on the surface of the substrate after dry etching as described above, at = After the detection of the bright spot of the object inspection device, the quality of the substrate is performed according to the detected and/or the distribution pattern of the bright spot. By means of the method, the pollution caused by the metallurgy is not and/or the extent thereof. In addition, P can lick the surface of the substrate and/or the presence of metal contamination in the vicinity of the surface: the presence or absence and/or extent thereof. For example, if the number of bright spots detected is higher, it may be severely contaminated with metal. When one of the in-plane U 7Γ has a redundant distribution pattern of 8 and the set, it can be judged to be contaminated with metal 319195 1-338930. Moreover, the distribution map macro of the 'removal point. Reason. For example, if the bright spot Distribution of pollution Contamination in crystal pulling: ,: 5 dimorphism' can be inferred as a pattern, it can be inferred that it is contamination from the contact of the thermal inspection plate:::: characteristic inspection device. In the same manner as the method 2 described later, the method of elemental analysis of the detected bright spots can specify the type of the substrate to be included in the method 1. On the other hand, the method 2 is borrowed. The elemental analysis of the bright spots detected by the foreign matter inspection device is performed on the surface of the substrate after the dry money, and the type of the contaminated metal contained in the substrate is specified. The elemental analysis can be performed by a selective microscope or The bright spot is observed by a transmission electron microscope (TEM), and is performed by energy dispersive x> line spectroscopic analysis in the bright spot. In the method 2, since dry etching is used as an etching method, metal impurities are not formed after etching. Since it is detached from the substrate and remains, the above-described elemental analysis can be performed. Further, in the method 2, it is also possible to specify the type of the contaminated metal by the elemental analysis described above. In the same manner as described above, the quality of the substrate is evaluated based on the number and/or distribution pattern of bright spots detected by the foreign matter inspection device. Further, the present invention relates to a method of manufacturing a semiconductor substrate. The method for manufacturing a semiconductor substrate includes the steps of: preparing a batch of a semiconductor substrate composed of a plurality of semiconductor substrates; and 12 319195 1338930, at least one semiconductor substrate is extracted, and "the semiconductor substrate is evaluated (four) step". The quality evaluation is judged as the quality of the medicinal substrate, and the quality of the semiconductor substrate extracted as the product substrate, and the quality of the semiconductor substrate extracted as the product substrate. The method for evaluating the product f of the semiconductor substrate of the present invention is carried out. n As described above, by the method of the semiconductor substrate of the present invention, it is possible to evaluate the presence or absence of metal contamination and/or its degree, specific fouling: From
==判定為良品的半導體基板同-批量内的S 土板作為製品基板而予以出t，即能 品質的製品基板。又，判们鈐供向 j疋马艮00的基準係可因應晶圓夕 用途等而考慮對於晶圓所要求的物性來進行設定。 (實施例） 认 、以下，根據實施例對本發明更加進行說明。但本發明 並非為由實施例所示之態樣所限定者。 [貫施例1 ] 使用反應性離子蝕刻裝置，將鏡面研磨後的si半導體 晶圓以O.l^zrn深度乾蝕刻後，以異物檢查裝置觀察亮點 之分布圖案。钱刻條件係如以下所示。 功率：肩，氣體：sf6，壓力：26.6Pa，頻率· i3 56MHz 將亮點之分布圖案顯示於第i圖。如第i圖所示，所 評價的晶圓並未觀察财異常分布的_ 無污染的晶圓。 未』，、马 319195 13 1338930 [實施例2] 除了以鎳（N〇水溶液藉由旋轉塗佈機（响c⑽㈣故 意地對鏡面研磨後的Si半導體晶圓進行污染後，在麵 C、！〇分鐘的氮氣環境下加以熱處理，而在晶圓表面附近 形成有鎳的石夕化物以外，係執行與實施例】同樣的處理。 將處理後之晶圓表面之亮點分布圖案以異物檢查裝置予以 觀察:將結果顯示於第2圖。如第2圖所示，在將表面附 近故意以心染後的晶圓中，圖案為均一者。但與實施例 1之晶圓相比之下亮點的密度增加了。 將所增加的亮點以SEM進行觀察時， ㈣示具有<110>之方向性的突起物，進行能量分散型x 線則可從該突起物令如第4圖所示分析出Ni。 =2等#訊中所觀察到的突起物可推論為錄㈣化物内的 [實施例3] •表面磨時在漿體中混入銅(cu)、b，在晶圓 的處理。將處理後之曰；；^ 行與實施例1同樣 裝置予以勸家此曰曰固表的㈣分布圖案以異物檢查 裝置子以觀察。將結果顯示於第5圖。 將表面以及表面附近的塊體故意以n 以觀察到於外周密集有亮點的圖案。 的曰曰回，可 (產業上的可利用性） *特==二:價金屬污染之有無及/或其程度，以 木金屬的種類。本發明尤其有心製造步驟的 319195 】4 1338930 改善。 【圖式簡單說明】 第1圖係表示實施例1的晶圓上之亮點分佈圖案。 第2圖係表示實施例2的晶圓上之亮點分佈圖案。 第3圖係表示實施例2的SEM觀察之結果。 第4圖係表示實施例2的能量分散型X線分光分析之 結果。 第5圖係表示實施例3的晶圓上之亮點分佈圖案。== The semiconductor substrate which is judged to be good and the S-soil in the same batch are used as the product substrate, that is, the product substrate of the quality. In addition, it is determined that the reference system for the 疋 艮 艮 00 can be set in consideration of the physical properties required for the wafer in consideration of wafer use and the like. (Embodiment) Hereinafter, the present invention will be further described based on examples. However, the invention is not limited by the aspects shown in the examples. [Example 1] Using a reactive ion etching apparatus, the mirror-polished Si semiconductor wafer was dry-etched at a depth of 0.1 μm, and the distribution pattern of the bright spots was observed by a foreign matter inspection apparatus. The money engraving conditions are as follows. Power: shoulder, gas: sf6, pressure: 26.6Pa, frequency · i3 56MHz The distribution pattern of the bright spots is shown in the i-th picture. As shown in Figure i, the wafers evaluated did not observe the ugly-distributed wafers. No, Ma 319195 13 1338930 [Example 2] In addition to nickel (N〇 aqueous solution deliberately contaminated the mirror-polished Si semiconductor wafer by a spin coater (C (10) (4)), on the surface C, ! The heat treatment was performed in a nitrogen atmosphere for a minute, and the same treatment as in the example was carried out except for the formation of nickel in the vicinity of the surface of the wafer. The distribution pattern of the bright spot on the surface of the wafer was observed by a foreign matter inspection device. The results are shown in Fig. 2. As shown in Fig. 2, the pattern is uniform in the wafer which is deliberately dyed near the surface. However, the density of the bright spots is higher than that of the wafer of Example 1. When the increased bright spot is observed by SEM, (4) shows a protrusion having a directivity of <110>, and an energy dispersive type x line is used to analyze Ni from the protrusion as shown in Fig. 4. The protrusions observed in the =2 et al. can be inferred to be recorded in the (four) compound [Example 3] • When the surface is ground, copper (cu), b is mixed in the slurry, and the wafer is processed. After the same; the same device as in the first embodiment The (four) distribution pattern of the tamping watch was observed with a foreign matter inspection device. The results are shown in Fig. 5. The surface and the block near the surface were intentionally observed with n to observe a pattern of bright spots densely on the periphery. Back, can be (industrial availability) *Special == two: the presence or absence of valence metal pollution and / or its extent, the type of wood metal. The present invention is especially focused on the manufacturing steps of 319195 】 4 1338930 improvement. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a bright spot distribution pattern on a wafer of Example 1. Fig. 2 is a view showing a bright spot distribution pattern on a wafer of Example 2. Fig. 3 is a view showing a result of SEM observation of Example 2. Fig. 4 is a view showing the results of energy dispersive X-ray spectroscopic analysis of Example 2. Fig. 5 is a view showing a bright spot distribution pattern on the wafer of Example 3.
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