CN114242567A - Process for reducing BMD (boron nitride) of high-oxygen silicon substrate - Google Patents
Process for reducing BMD (boron nitride) of high-oxygen silicon substrate Download PDFInfo
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- CN114242567A CN114242567A CN202111459200.XA CN202111459200A CN114242567A CN 114242567 A CN114242567 A CN 114242567A CN 202111459200 A CN202111459200 A CN 202111459200A CN 114242567 A CN114242567 A CN 114242567A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02082—Cleaning product to be cleaned
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Abstract
The invention discloses a process for reducing BMD of a high-oxygen silicon substrate, which comprises the following steps: s1, firstly, weighing components in corresponding proportions of 8-inch straight-pull polishing pieces, oxygen, argon, ammonia water, hydrogen peroxide, hydrochloric acid and hydrofluoric acid according to the weight parts of the components, placing the components in corresponding storage vessels for later use, carrying out crystal pulling processing on the 8-inch straight-pull polishing pieces, carrying out tumbling and cutting processing after the crystal pulling processing is finished, carrying out stick-sticking and wire-cutting processing after the tumbling and cutting processing is finished, carrying out degumming cleaning processing after the stick-sticking and wire-cutting processing is finished, carrying out slice inspection after the degumming cleaning processing is finished, carrying out chamfering and lapping after the slice inspection is finished, S2, and then carrying out cleaning and corrosion processing on the 8-inch straight-pull polishing pieces after the lapping. The method can not be influenced by the number and size distribution of the primary BMD nuclei of the initial crystal, can form uniform and controllable BMD density, has a certain DZ area, and has better effect on metal gettering.
Description
Technical Field
The invention relates to the technical field of RTP (real time processing) equipment, in particular to a process for reducing BMD (boron nitride) of a high-oxygen silicon substrate.
Background
Because semiconductor products are rapidly developed and widely applied, the requirements on the quality and the process of a silicon substrate are higher and higher, different products have corresponding characteristic requirements on the silicon substrate, a monitoring wafer for Life time needs the silicon substrate with low BMD and low metal impurity pollution, although a low-oxygen product has less BMD, the strength of the low-oxygen product cannot adapt to a subsequent thermal process, and the BMD is too little, the metal gettering effect can be influenced, although the high-oxygen product has certain strength, the high-oxygen product can generate more BMD in the subsequent thermal process, the minority carrier lifetime is influenced, and the early whiteboard process achieves the effect of low BMD by a method of eliminating the BMD of a crystal part at low temperature (about 900 ℃).
However, since the distribution, size and number of primary nuclei of a single crystal depend on many factors including the concentration of carbon and oxygen, the cooling rate of the crystal solidification, the temperature range in which the size distribution of oxygen precipitates is significantly expanded, the concentration of vacancies left by the reaction generating the related defects, etc. depending on the single crystal pulling process, the single crystal may have various initial oxygen precipitates in consideration of a large number of variables in the problem, and even if there is a large variation in the product having the same oxygen content, when the phenomenon that the single crystal has almost no initial oxygen precipitates occurs, the low temperature process has almost no BMD to be eliminated, and the effect of low BMD cannot be achieved.
Disclosure of Invention
The present invention is directed to a process for reducing BMD of a high-oxygen silicon substrate, which solves the problems of the prior art, in which the distribution, size and number of grown-in nuclei of a single crystal are determined by many factors including the concentration of carbon and oxygen, the cooling rate of crystal solidification, the temperature range in which the size distribution of oxygen precipitates is significantly expanded, the concentration of vacancies left by reactions generating related defects, etc., due to the difference in the pulling process of the single crystal, the single crystal has various initial oxygen precipitates in consideration of a large number of variables in the problem, there is a great variation even in products having the same oxygen content, and when the phenomenon in which the single crystal has almost no initial oxygen precipitates occurs, the BMD of the low-temperature process can be eliminated almost without BMD, and the effect of low BMD cannot be achieved.
In order to achieve the purpose, the invention provides the following technical scheme: a process for reducing BMD of a high oxygen silicon substrate, the process comprising the steps of:
s1, weighing the components of the 8-inch straight-pull polishing piece, oxygen, argon, ammonia water, hydrogen peroxide, hydrochloric acid and hydrofluoric acid according to the weight parts of the components, placing the components in corresponding storage vessels for later use, carrying out crystal pulling processing on the 8-inch straight-pull polishing piece, carrying out tumbling and cutting processing after the crystal pulling processing is finished, carrying out stick-sticking and wire-cutting processing after the tumbling and cutting processing is finished, carrying out degumming and cleaning processing after the stick-sticking and wire-cutting processing is finished, carrying out slice inspection after the degumming and cleaning processing is finished, and carrying out chamfering and grinding after the slice inspection is finished.
S2, cleaning and corroding the 8-inch straight-pull polishing sheet after grinding, cleaning again and visually inspecting after the corrosion treatment, cleaning again the 8-inch straight-pull polishing sheet after the visual inspection, annealing after the cleaning, carrying out RTP (real time transport protocol) processing after the annealing, thinning and cleaning after the RTP processing, polishing after the cleaning, cleaning and visually inspecting the polishing sheet after the polishing treatment.
And S3, finally, carrying out pre-polishing sorting and polishing treatment on the polished wafer subjected to visual inspection, carrying out pre-cleaning after the polishing treatment is finished, carrying out geometric parameter detection after the pre-cleaning is finished, carrying out visual inspection and final cleaning after the geometric parameter detection is finished, carrying out particle detection after the final cleaning is finished, and carrying out final packaging finished product warehousing after the particle detection is finished.
Preferably, the auxiliary materials of the process for reducing the BMD of the high-oxygen silicon substrate comprise:
8 inch straight pull polishing sheet;
oxygen: 99.9 percent;
argon gas: 99.999 percent;
ammonia water analysis pure content: 28% -30%;
analytically pure content of hydrochloric acid: 35% -38%;
hydrogen peroxide analytically pure content: 30% -32%;
analytically pure concentration of hydrofluoric acid: 49 percent.
Preferably, the concentration ratio of the cleaning machine process liquid medicine SC1-1 to SC1-2 is NH 4. H2O: H2O 2: DIW 1: 2: 15, the washing temperature is 70 ℃ plus or minus 5 ℃, and the washing time is 300 sec.
Preferably, the chemical solution concentration ratios QDR1, QDR2, QDR3, QDR4 and OFR of the cleaning machine process are all DIW, the temperature can be adjusted according to actual conditions, and the cleaning time is 300 sec.
Preferably, the concentration ratio of the chemical liquid of the cleaning machine process to the SC2 HCL: H2O 2: DIW 1: 2: 15, the temperature can be adjusted according to actual conditions, and the cleaning time is 300 sec.
Preferably, the chemical solution concentration ratio of the cleaning machine process to HF is HF: the DIW-1: 6 temperature can be adjusted according to actual conditions, and the cleaning time is 300 sec.
Preferably, the Spin Dryer speed of the washer process is 307rpm +614rpm for 20+200 sec.
Compared with the prior art, the invention has the beneficial effects that:
the method can not be influenced by the number and size distribution of the primary BMD nuclei of the initial crystal, can form uniform and controllable BMD density, has a certain DZ area, and has better effect on metal gettering.
Drawings
FIG. 1 is a process diagram of the present invention;
FIG. 2 is a table of the BMD heat treatment process of the present invention;
FIG. 3 is a table of process parameters according to the present invention;
FIG. 4 is a table of the dry oxygen oxidation process of the present invention;
FIG. 5 is a table of BMD test values according to the present invention;
FIG. 6 is a comparative process diagram of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
referring to fig. 1-3, the process of the present embodiment includes the following steps:
s1, weighing the components of the 8-inch straight-pull polishing piece, oxygen, argon, ammonia water, hydrogen peroxide, hydrochloric acid and hydrofluoric acid according to the weight parts of the components, placing the components in corresponding storage vessels for later use, carrying out crystal pulling processing on the 8-inch straight-pull polishing piece so as to control the oxygen content of the crystal in real time, carrying out tumbling and cutting processing after the crystal pulling processing is finished, carrying out stick sticking and wire cutting processing after the tumbling and cutting processing is finished, carrying out degumming cleaning processing after the stick sticking and wire cutting processing is finished, carrying out slice cutting inspection after the degumming cleaning processing is finished, and carrying out chamfering and grinding after the slice inspection is finished.
S2, cleaning and corroding the 8-inch straight-pull polishing sheet after lapping, cleaning again and visually inspecting after the corrosion treatment is finished, cleaning again the 8-inch straight-pull polishing sheet after the visual inspection is finished, annealing after the cleaning is finished, carrying out RTP processing after the annealing is finished, eliminating all original nuclei of the crystal, generating a certain amount of vacancy concentration, forming a certain amount of uniform BMD in the subsequent thermal process, wherein the main process parameter is SOAK temperature, and the temperature is changed from 900 ℃ to 1200 ℃. The primary nuclei of the crystals are almost completely ablated when the temperature reaches 1200 c, while the V-I pair concentration produced is lower at 1200 c. And introducing a certain amount of oxygen into the cavity in the constant temperature process, and compounding the generated interstitial silicon atoms with the vacancy of the wafer surface layer to form a uniform DZ layer. And finally, rapidly cooling, forming a certain vacancy concentration in the wafer thickness center, forming a lower and uniform BMD density in the wafer thickness center in a subsequent thermal process, finally playing the roles of metal gettering and minority carrier lifetime prolonging, performing thinning treatment and cleaning after RTP processing is finished, performing polishing processing after cleaning, cleaning after polishing processing is finished, and performing visual inspection and observation on the polished wafer.
And S3, finally, carrying out pre-polishing sorting and polishing treatment on the polished wafer subjected to visual inspection, carrying out pre-cleaning after the polishing treatment is finished, carrying out geometric parameter detection after the pre-cleaning is finished, carrying out visual inspection and final cleaning after the geometric parameter detection is finished, carrying out particle detection after the final cleaning is finished, and carrying out final packaging finished product warehousing after the particle detection is finished.
In this embodiment, a process for reducing BMD of a high oxygen silicon substrate includes the following auxiliary materials:
8 inch straight pull polishing sheet;
oxygen: 99.9 percent;
argon gas: 99.999 percent;
ammonia water analysis pure content: 28% -30%;
analytically pure content of hydrochloric acid: 35% -38%;
hydrogen peroxide analytically pure content: 30% -32%;
analytically pure concentration of hydrofluoric acid: 49 percent.
In the embodiment, the concentration ratio of the process liquid medicine of the cleaning machine SC1-1 to SC1-2 is NH 4. H2O: H2O 2: DIW 1: 2: 15, the washing temperature is 70 ℃ plus or minus 5 ℃, and the washing time is 300 sec.
In this embodiment, the chemical concentration ratios QDR1, QDR2, QDR3, QDR4 and OFR of the cleaning machine process are all DIW, the temperature can be adjusted according to actual conditions, and the cleaning time is 300 sec.
In this embodiment, the concentration ratio of the chemical solution of the cleaning machine process to SC2 HCL: H2O 2: DIW 1: 2: 15, the temperature can be adjusted according to actual conditions, and the cleaning time is 300 sec.
In this embodiment, the concentration ratio of the chemical solution in the cleaning machine process to HF is HF: the DIW-1: 6 temperature can be adjusted according to actual conditions, and the cleaning time is 300 sec.
In this example, the Spin Dryer speed of the washer process was 307rpm +614rpm for 20+200 sec.
Example two:
the difference characteristic from the first embodiment is that:
the process of the embodiment comprises the following steps:
s1, weighing the components of the 8-inch straight-pull polishing piece, oxygen, argon, ammonia water, hydrogen peroxide, hydrochloric acid and hydrofluoric acid according to the weight parts of the components, placing the components in corresponding storage vessels for later use, carrying out crystal pulling processing on the 8-inch straight-pull polishing piece, carrying out tumbling and cutting processing after the crystal pulling processing is finished, carrying out stick-sticking and wire-cutting processing after the tumbling and cutting processing is finished, carrying out degumming and cleaning processing after the stick-sticking and wire-cutting processing is finished, carrying out slice inspection after the degumming and cleaning processing is finished, and carrying out chamfering and grinding after the slice inspection is finished.
S2, cleaning and corroding the 8-inch straight-pull polishing sheet after grinding, cleaning again and visually inspecting after the corrosion treatment, cleaning again the 8-inch straight-pull polishing sheet after the visual inspection, annealing after the cleaning, carrying out RTP (real time transport protocol) processing after the annealing, thinning and cleaning after the RTP processing, polishing after the cleaning, cleaning and visually inspecting the polishing sheet after the polishing treatment.
And S3, finally, carrying out pre-polishing sorting and polishing treatment on the polished wafer subjected to visual inspection, carrying out pre-cleaning after the polishing treatment is finished, carrying out geometric parameter detection after the pre-cleaning is finished, carrying out visual inspection and final cleaning after the geometric parameter detection is finished, carrying out particle detection after the final cleaning is finished, and carrying out final packaging finished product warehousing after the particle detection is finished.
In this embodiment, a process for reducing BMD of a high oxygen silicon substrate includes the following auxiliary materials:
8 inch straight pull polishing sheet;
oxygen: 90 percent;
argon gas: 99.999 percent;
ammonia water analysis pure content: 15% -25%;
analytically pure content of hydrochloric acid: 35% -38%;
hydrogen peroxide analytically pure content: 30% -32%;
analytically pure concentration of hydrofluoric acid: 30 percent.
In the embodiment, the concentration ratio of the process liquid medicine of the cleaning machine SC1-1 to SC1-2 is NH 4. H2O: H2O 2: DIW 1: 2: 15, the washing temperature is 50 +/-5 ℃, and the washing time is 300 sec.
In this embodiment, the chemical concentration ratios QDR1, QDR2, QDR3, QDR4 and OFR of the cleaning machine process are all DIW, the temperature can be adjusted according to actual conditions, and the cleaning time is 300 sec.
In this embodiment, the concentration ratio of the chemical solution of the cleaning machine process to SC2 HCL: H2O 2: DIW 1: 2: 15, the temperature can be adjusted according to actual conditions, and the cleaning time is 150 sec.
In this embodiment, the concentration ratio of the chemical solution in the cleaning machine process to HF is HF: the DIW-1: 6 temperature can be adjusted according to actual conditions, and the cleaning time is 300 sec.
In this example, the Spin Dryer speed of the washer process was 307rpm +614rpm for 20+200 sec.
To sum up: the process result of the invention in the first embodiment of the invention shows that, compared with the process result in the second embodiment, the invention can not be influenced by the number and size distribution of the primary BMD nuclei of the initial crystal, can form uniform and controllable BMD density, has a certain DZ region and has better effect on metal gettering, so that the effect of the invention is better than that of the second embodiment.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. A process for reducing BMD of a high-oxygen silicon substrate is characterized in that: the process comprises the following steps:
s1, firstly, weighing components in corresponding proportions of 8-inch straight-pull polishing pieces, oxygen, argon, ammonia water, hydrogen peroxide, hydrochloric acid and hydrofluoric acid according to the weight parts of the components, placing the components in corresponding storage vessels for later use, carrying out crystal pulling processing on the 8-inch straight-pull polishing pieces, carrying out tumbling and cutting processing after the crystal pulling processing is finished, carrying out stick-sticking and wire-cutting processing after the tumbling and cutting processing is finished, carrying out degumming and cleaning processing after the stick-sticking and wire-cutting processing is finished, carrying out slice inspection after the degumming and cleaning processing is finished, and carrying out chamfering and grinding after the slice inspection is finished;
s2, cleaning and corroding the 8-inch straight-pull polishing sheet after grinding, cleaning again and visually inspecting after the corrosion treatment, cleaning again the 8-inch straight-pull polishing sheet after the visual inspection, annealing after the cleaning, performing RTP (real time transport protocol) processing after the annealing, thinning and cleaning after the RTP processing, polishing after the cleaning, cleaning and visually inspecting the polishing sheet;
and S3, finally, carrying out pre-polishing sorting and polishing treatment on the polished wafer subjected to visual inspection, carrying out pre-cleaning after the polishing treatment is finished, carrying out geometric parameter detection after the pre-cleaning is finished, carrying out visual inspection and final cleaning after the geometric parameter detection is finished, carrying out particle detection after the final cleaning is finished, and carrying out final packaging finished product warehousing after the particle detection is finished.
2. A process for reducing BMD of a high-oxygen silicon substrate is characterized in that: the auxiliary materials for the process of reducing the BMD of the high-oxygen silicon substrate comprise:
8 inch straight pull polishing sheet;
oxygen: 99.9 percent;
argon gas: 99.999 percent;
ammonia water analysis pure content: 28% -30%;
analytically pure content of hydrochloric acid: 35% -38%;
hydrogen peroxide analytically pure content: 30% -32%;
analytically pure concentration of hydrofluoric acid: 49 percent.
3. The process of claim 1, wherein the BMD of the high-oxygen silicon substrate is reduced by: the concentration ratio of the process liquid medicine of the cleaning machine to SC1-1 and SC1-2 is NH 4. H2O: H2O 2: DIW 1: 2: 15, the washing temperature is 70 ℃ plus or minus 5 ℃, and the washing time is 300 sec.
4. The process of claim 1, wherein the BMD of the high-oxygen silicon substrate is reduced by: the chemical solution concentration ratios QDR1, QDR2, QDR3, QDR4 and OFR of the cleaning machine process are all DIW, the temperature can be adjusted according to actual conditions, and the cleaning time is 300 sec.
5. The process of claim 1, wherein the BMD of the high-oxygen silicon substrate is reduced by: the concentration ratio of the liquid medicine of the cleaning machine process to SC2HCL is as follows: H2O 2: DIW 1: 2: 15, the temperature can be adjusted according to actual conditions, and the cleaning time is 300 sec.
6. The process of claim 1, wherein the BMD of the high-oxygen silicon substrate is reduced by: the concentration ratio of the liquid medicine of the cleaning machine process to HF is HF: the DIW-1: 6 temperature can be adjusted according to actual conditions, and the cleaning time is 300 sec.
7. The process of claim 1, wherein the BMD of the high-oxygen silicon substrate is reduced by: the Spin Dryer speed of the washer process was 307rpm +614rpm for 20+200 sec.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115360123A (en) * | 2022-08-24 | 2022-11-18 | 北京华林嘉业科技有限公司 | Wafer cassette-free cleaning method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115360123A (en) * | 2022-08-24 | 2022-11-18 | 北京华林嘉业科技有限公司 | Wafer cassette-free cleaning method |
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