CN111999630A - Method and system for testing working junction temperature of power device - Google Patents
Method and system for testing working junction temperature of power device Download PDFInfo
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- CN111999630A CN111999630A CN202011168857.6A CN202011168857A CN111999630A CN 111999630 A CN111999630 A CN 111999630A CN 202011168857 A CN202011168857 A CN 202011168857A CN 111999630 A CN111999630 A CN 111999630A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K13/00—Thermometers specially adapted for specific purposes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/003—Environmental or reliability tests
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
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Abstract
The invention provides a method and a system for testing the working junction temperature of a power device. The method includes testing T1，T1The surface temperature of the power device during normal operation; measuring VF1，VF1Is T1Corresponding to the VF value of the PN junction; determining the corresponding relation between the junction temperature and the PN junction VF; according to the corresponding relation and VF1Determining VF1Corresponding to the junction temperature, i.e. the operating junction temperature. The system comprises a temperature control unit, a pulse driving unit, a temperature measuring unit, a VF measuring unit and a control unit; the temperature control unit can regulate and control the temperature of the power device; the pulse driving unit can provide pulse voltage to control temperature; the temperature measuring unit can measure temperature; the VF measuring unit can measure a PN junction VF value; the control unit can process the measured data to obtain the working junction temperature and can send out an adjusting pulse to the pulse driving unitA signal of width. The method is simple and convenient, the measurement result is accurate, the service life of the power device is prolonged, and the measured junction temperature can be used as a reference for judging the quality of the power device.
Description
Technical Field
The invention relates to the field of power device testing, in particular to a method and a system for testing the working junction temperature of a power device.
Background
The working junction temperature of the device is the temperature of a chip in a packaging body when the device works normally, and the temperature of the chip is directly related to the service life and the stability of the device; the highest junction temperature of the chip is determined by the semiconductor device material, namely 125 ℃, 150 ℃, 175 ℃ and the like, and the chip can be damaged due to overheating when the highest junction temperature of the chip is exceeded.
In application, a power supply designer usually uses the surface temperature of a plastic package body as a judgment standard for the quality of a device, the lower the surface temperature of the device is, the better the surface temperature of the device is, and the working junction temperature of the device is ignored by the judgment standard; analytical thermal resistance calculation formula: tc = Tj-P*Rθjc(wherein T isjJunction temperature, Tc shell temperature, P device power, RθjcThermal resistance of the device junction to the case), at power P and junction temperature TjUnder the same condition, the shell temperature of the device is directly related to the thermal resistance, the shell temperature of the device with larger thermal resistance is lower, and on the contrary, the shell temperature of the device with smaller thermal resistance is higher; therefore, the method for judging the quality of the device by using the surface temperature of the device is contrary to the process requirement of reducing the thermal resistance as much as possible.
In the mathematical model simulation of the thermal resistance of the device, the device with larger thermal resistance has higher internal junction temperature of the chip although the surface temperature is lower, and the internal heat of the chip is not easy to dissipate because of the large thermal resistance; in contrast, for devices with low thermal resistance, heat is easily dissipated, and although the surface temperature is high, the internal junction temperature is relatively low.
The working junction temperature obtained by the traditional method is usually calculated by a thermal resistance formula, and the power P in the formula cannot be directly measured in the actual working process of the device and needs to be calculated according to parameters such as switching frequency, internal resistance, conduction time and the like; and the thermal resistance R in the formulaθjcAlthough labeled in the product specification, reliable data is hardly available due to variations in test equipment from manufacturer to manufacturer and manufacturer artifacts, and therefore meaningful junction temperature data cannot be obtained by calculation. The height of the working junction temperature is related to the service life of the device and the stability of the device, and the height of the surface temperature of the plastic package body is used as a standard for judging the quality of the device.
Disclosure of Invention
In view of the deficiencies in the prior art, it is an object of the present invention to address one or more of the problems in the prior art as set forth above. For example, one of the objectives of the present invention is to accurately obtain the actual junction temperature at which the power device operates.
In order to achieve the above object, an aspect of the present invention provides a method for testing an operating junction temperature of a power device.
The testing method may comprise the steps of: test T1，T1The surface temperature value of the power device in the normal operation of the circuit is obtained; measuring VF1，VF1Stabilizing the surface temperature of the power device at T1VF value of the time PN junction; determining the corresponding relation between the junction temperature of the power device and the VF of the PN junction; according to the corresponding relation and VF1Determining VF1A corresponding junction temperature, which is the operating junction temperature of the power device; wherein the measurement VF1Comprises the following steps: providing pulse voltage with fixed frequency and adjustable duty ratio to the power device to ensure that the power device heats and raises temperature by utilizing the internal resistance of the power device, and the surface temperature of the power device reaches and stabilizes at T1Thereafter, VF is measured1。
Further, the test T1May comprise the steps of: the power device is stably operated in the circuit for at least 3 hours, and thenTesting the surface temperature of the power device to obtain the T1。
Further, the step of determining the relationship between the junction temperature of the power device and the VF of the PN junction may include: heating the power device to a preset temperature, stabilizing for a period of time to enable the internal and external temperatures of the power device to be consistent, then slowly cooling, measuring VF values of the PN junction at different temperature values in the cooling process, and obtaining the corresponding relation between the junction temperature and the VF of the PN junction.
Further, in the case that the power device is an MOS tube, the VF is measured1May comprise the steps of: constant direct current voltage is added to pins D and S of the MOS tube, and the pulse voltage is added to pin G, so that the MOS tube is in a continuous switching state, and the MOS tube heats and raises the temperature by utilizing the internal resistance of the MOS tube; monitoring the surface temperature of the MOS tube; at said monitored temperature not being equal to T1In the case of (2), the pulse width of the pulse voltage is adjusted so that the surface temperature of the power device reaches and stabilizes at T1。
Further, in the case where the power device is a diode, the VF being measured1May comprise the steps of: providing the pulse voltage to the forward direction of the diode, and heating and warming the diode by utilizing the internal resistance of the diode; monitoring the surface temperature of the diode; at said monitored temperature not being equal to T1In the case of (2), the pulse width of the pulse voltage is adjusted so that the surface temperature of the power device reaches and stabilizes at T1。
The invention provides a system for testing the operating junction temperature of the power device.
The test system comprises: the temperature control device comprises a temperature control unit, a pulse driving unit, a temperature measuring unit, a VF measuring unit and a control unit, wherein the temperature control unit can control the temperature of a power device through heating or cooling; the pulse driving unit can provide pulse voltage for the power device so that the power device heats and raises temperature by utilizing the internal resistance of the power device; the temperature measuring unit can measure the temperature of the surface of the power device acted by the temperature control unit and the pulse driving unit; the VF measuring unit can measure the VF value of a PN junction of the power device acted by the temperature control unit and the pulse driving unit; the control unit can process the data measured by the temperature measuring unit and the VF measuring unit to obtain the working junction temperature of the power device, and the control unit can also send a signal to the pulse driving unit to adjust the pulse width of the pulse voltage.
Further, the test system can also comprise a working unit, the working unit comprises a working circuit, and the power device can work normally in the working circuit.
Further, the temperature measuring unit is also capable of measuring T1，T1And the surface temperature value of the power device in normal operation in the operating circuit is obtained.
Further, the pulse driving unit comprises a pulse driving circuit, the VF measuring unit comprises a VF measuring circuit, and the system further comprises a switching circuit capable of switching between the pulse driving circuit and the VF measuring circuit.
Further, the temperature measuring unit comprises a temperature measuring circuit and a temperature probe.
Further, in the case that the power device is an MOS transistor, the pulse driving unit may apply a constant dc voltage to pins D and S of the MOS transistor, and apply a pulse voltage to pin G, so that the MOS transistor is in a continuous on-off state, and the MOS transistor heats up by its own internal resistance; the temperature measuring unit can monitor the surface temperature of the MOS tube; at said monitored temperature not being equal to T1The control unit can send a signal to the pulse driving unit to adjust the pulse width of the pulse voltage, so that the surface temperature of the power device reaches and stabilizes at T1(ii) a Under the condition that the power device is a diode, the pulse driving unit can provide pulse voltage to the forward direction of the diode, and the diode heats and raises temperature by utilizing the internal resistance of the diode; the temperature measuring unit can monitor the surface temperature of the diode; at said monitored temperature not being equal to T1The control unit can send a signal to the pulse driving unit to adjust the pulse width of the pulse voltage, so that the surface temperature of the power device reaches and stabilizes at T1(ii) a The VF measurement unit being capable of measuring VF1，VF1The surface temperature of the power device reaches and stabilizes at T1The VF value of the PN junction.
Further, the temperature control unit can heat the power device to a preset temperature and stabilize the temperature for a period of time so as to enable the internal temperature and the external temperature of the power device to be consistent, and then slowly cool the power device; in the slow cooling process, the temperature measuring unit and the VF measuring unit can also respectively measure the real-time temperature of a power device acted by the temperature control unit and the VF value of a PN junction corresponding to the real-time temperature; the control unit can obtain the corresponding relation between the real-time temperature and the VF value of the PN junction corresponding to the real-time temperature according to the real-time temperature, and can determine the VF value according to the corresponding relation1The corresponding temperature, which is the operating junction temperature of the power device.
Further, the test system may further include a display unit capable of displaying the temperature value measured by the temperature measuring unit and the VF value measured by the VF measuring unit.
Compared with the prior art, the beneficial effects of the invention can include: the method is simple and convenient, the measurement result is accurate, the stability and the service life of the power device are favorably prolonged, the measured junction temperature can be used as a reference for judging the quality of the power device, and the method can be used for evaluating the thermal failure risk of the power device.
Drawings
The above and other objects and features of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:
fig. 1 is a schematic flow chart of a method for testing the operating junction temperature of a power device according to the present invention;
fig. 2 is a schematic block diagram showing a structure of a power device operation junction temperature test system according to the present invention;
fig. 3 is another block diagram showing the structure of the test system for the operating junction temperature of the power device according to the present invention.
Detailed Description
Hereinafter, the method and system for testing the operating junction temperature of the power device according to the present invention will be described in detail with reference to the accompanying drawings and exemplary embodiments.
The invention provides a method for testing the working junction temperature of a power device.
In an exemplary embodiment of the method for testing the operating junction temperature of the power device of the present invention, as shown in fig. 1, the method for testing may include:
measuring the surface temperature T of a power device (hereinafter may be simply referred to as a device) during normal operation in a circuit1. This step may be referred to as step S11.
The surface temperature of the device is stably reached to the temperature T by controllable heating1. This step may be referred to as step S12.
Measurement of T1VF value of PN junction at temperature. This step may be referred to as step S13.
The one-to-one correspondence between device junction temperature and PN junction VF, for example, the K-line that embodies the correspondence, is measured. This step may be referred to as step S20.
And finding out the corresponding junction temperature value in the K line data through the measured VF value. This step may be referred to as step S30.
Steps S20 and S11, S12, and S13 may not be in sequence, for example, step S20 may be performed simultaneously with step S11, or may be performed between steps S12 and S13.
In another exemplary embodiment of the method for testing the operating junction temperature of a power device of the present invention, the method for testing may comprise the steps of:
step 1: measuring the surface temperature value T of the device working normally in the actual circuit1The circuit has to work continuously for at least 3 hours to obtain a stable surface temperature value T1。
Step 2: and testing the K line of the device.
In this step, the characteristic of the PN junction forward voltage drop versus temperature, such as temperature increase and VF decrease, can be used. The diode directly utilizes the PN junction, and the MOS tube utilizes the diode parasitic between the S pole and the D pole to measure.
Specifically, the device can be placed in a heating box for heating, the heating is carried out to 120-180 ℃ (for example, 125 ℃, 150 ℃, 175 ℃) and a section is stabilized (so that the inner part and the outer part of a chip can reach the same temperature), then the temperature is slowly reduced, the temperature value (namely the surface temperature value of the device, actually the inner junction temperature value of the device, and the inner and outer temperature values are consistent) and the VF value of a PN junction are continuously measured and recorded, and the corresponding data of the junction temperature and the VF are obtained; the recording frequency can be 5-10 seconds, and the higher the recording frequency is, the higher the resolution is.
And step 3: the device is controllably heated.
A. MOS tube: constant direct current voltage is applied to pins D and S of the device (the direct current voltage can be adjusted, the higher the voltage is, the larger the current passing through the MOS tube is), pulse voltage is applied to a terminal G, the tube is in a continuous switching state, the pulse frequency is fixed, the frequency can be selected to be 40-80K, the on-time of the tube is adjusted by adjusting the duty ratio of a pulse signal, and the self internal resistance of the tube is utilized to generate heat. The surface temperature of the device is monitored by a temperature probe, the pulse width is adjusted by utilizing a PID algorithm, and finally the surface temperature of the device stably reaches T1And (3) temperature.
B. A Schottky diode: the device is positively supplied with a pulse voltage of a fixed frequency, which can be selected from 40-80K. The method comprises the steps of adjusting the opening time of a pipe by adjusting the duty ratio of a pulse signal, heating by utilizing the self internal resistance of the pipe, monitoring the surface temperature of a device by a temperature probe, adjusting the pulse width by utilizing a PID algorithm, and finally enabling the surface temperature of the device to stably reach T1And (3) temperature.
The step can also include the following steps: and displaying the current surface temperature value of the device to a worker in real time.
And step 4, measuring VF.
When the surface temperature of the device reaches T in the step 31And after stabilization (e.g., the device temperature does not change any more for a number of consecutive measurement cycles), the VF value at that time is measured quickly with the VF measurement circuit.
And 5, checking the junction temperature.
And (4) corresponding the K-line data (corresponding data of the temperature and the VF) with the measured VF to obtain the junction temperature of the device during operation.
The invention provides a system for testing the operating junction temperature of the power device.
In an exemplary embodiment of the test system for power device operational junction temperature of the present invention, as shown in fig. 2, the test system may comprise: the device comprises a working unit, a temperature control unit, a pulse driving unit, a temperature measuring unit, a VF measuring unit and a control unit.
Wherein, the working unit can comprise a working circuit, and the power device can work normally in the working circuit. The operating unit may include a circuit board, such as a circuit board of a customer, an electronic product using the power device. Since the customer currently uses the surface temperature to measure the quality, the present invention considers the surface temperature of the device in the customer product by setting the working unit.
The temperature control unit can control the temperature of the power device by heating or cooling. The temperature control unit may include a heating chamber or a heating box, such as a thermostat heating box, but the present invention is not limited thereto as long as it is a device capable of achieving the purpose of heating.
The pulse driving unit can provide pulse voltage to the power device so that the power device heats and raises the temperature by utilizing the internal resistance of the power device, and the frequency of the pulse voltage can be fixed and can be selected from 40-80K, such as 60 +/-10K. In the case that the power device is an MOS transistor, the pulse driving unit may further include a dc voltage supply mechanism, which is capable of applying a constant dc voltage to the D and S pins of the MOS transistor, and the dc voltage may be adjusted. The pulse driving unit may include a pulse driving circuit. The pulse driving unit and the control unit can be connected through a data transmission line, such as a communication cable, and of course, data transmission can also be performed between the pulse driving unit and the control unit in a wireless mode.
The temperature measuring unit can measure the temperature of the surface of the power device acted by the working unit, the temperature control unit and the pulse driving unit, namely the temperature measuring unit can measure the temperature of the surface of the power device in the working unit, can also measure the temperature of the surface of the power device acted by the temperature control unit and can also measure the temperature of the surface of the power device acted by the pulse driving unit. The temperature measuring unit may include a temperature probe and a temperature measuring circuit, and may be capable of feeding back a measured temperature value to the control unit.
The VF measuring unit can measure the VF value of the PN junction of the power device acted by the temperature control unit and the pulse driving unit. The VF measurement unit may include VF measurement circuitry. The VF measuring unit can feed back the measured parameters to the control unit, and the VF measuring unit and the control unit can be connected by a data transmission line, such as a communication cable, or between them, data transmission can be performed wirelessly.
The control unit can process the data measured by the temperature measuring unit and the VF measuring unit to obtain the operating junction temperature of the power device. After receiving the temperature value measured by the temperature measuring unit, the control unit can also send a signal to the pulse driving unit through a PID algorithm to adjust the pulse width of the pulse voltage, so that the device reaches the preset temperature.
In this embodiment, the temperature control unit can heat the power device to a predetermined temperature and stabilize the temperature for a period of time, so that the internal and external temperatures of the power device are consistent, and then slowly cool the power device. The predetermined temperature may be 140, 150, 160 ℃. The temperature control unit may include a heating device such as a thermostatic heating chamber.
In the process of slow cooling, the temperature measuring unit and the VF measuring unit can respectively measure different temperatures of the power device and VF values of the PN junctions corresponding to the different temperatures.
The control unit can store data pair groups consisting of the different temperatures and VF values of the PN junctions corresponding to the different temperatures. The control unit may also be capable of querying the VF in a data pair group1The corresponding temperature, which is the operating junction temperature of the power device.
Or the control unit can obtain the relationship between the junction temperature and the VF of the PN junction according to the different temperatures and the VF values of the PN junctions corresponding to the different temperatures. The control unit is further capable of determining the VF from the relationship1The corresponding temperature, which is the operating junction temperature of the power device.
In another exemplary embodiment of the test system for power device operational junction temperature of the present invention, as shown in fig. 3, the test system may comprise: a pulse drive circuit, a temperature measurement circuit, a VF measurement circuit, a heating/measurement switching circuit, a signal processing unit (corresponding to the control unit in the last exemplary embodiment), a key unit, a display unit, a communication unit, a power supply, a heating box (not shown in fig. 3), and the like.
The pulse driving circuit provides pulse voltage for the device to be tested so as to realize controllable heating of the device to be tested. The temperature measuring circuit can measure the surface temperature of the device to be measured and feed back the measured temperature to the signal processing unit. The signal processing unit adjusts the pulse width of the pulse driving circuit by PID algorithm, and finally the surface temperature of the device reaches T stably1And (3) temperature. When the surface temperature of the device reaches T1After the voltage is stabilized, the current VF value is obtained by rapidly switching to a VF measuring circuit through a heating/measuring switching single circuit. The display unit can display the measured temperature value and the VF value in real time. The measured data can be transmitted to a PC end acquisition system through a communication cable, and the PC end acquisition system can record and store the data pair group of junction temperature and VF and can also perform chart display, analysis and the like.
The key unit can be used for setting and inputting a target value to which the surface temperature of the device needs to be heated by the test system, namely the temperature T of the test1. The communication unit can transmit data to the PC side acquisition system.
The power supply is capable of supplying power to various power sources that require electrical energy.
In this embodiment, both the temperature measurement circuit and the VF measurement circuit may include a high-precision op-amp conditioning circuit and a high-precision ADC sampling circuit.
In summary, the advantages of the method and system for testing the junction temperature of the power device according to the present invention include: the method indirectly measures the working junction temperature of the device, directly bypasses the power P of the device and the thermal resistance R of the deviceθjcAll data are actually measured values, no data are calculated, calculated or estimated, all data are obtained depending on circuit design, and the high-precision operational amplifier conditioning circuit and the high-precision ADC can be used for sampling to obtain data, so that the obtained values are more accurate.
Although the present invention has been described above in connection with exemplary embodiments, it will be apparent to those skilled in the art that various modifications and changes may be made to the exemplary embodiments of the present invention without departing from the scope defined in the claims.
Claims (10)
1. A method for testing an operating junction temperature of a power device, the method comprising the steps of:
test T1，T1The surface temperature value of the power device in the normal operation of the circuit is obtained; measuring VF1，VF1Stabilizing the surface temperature of the power device at T1VF value of the time PN junction; determining the corresponding relation between the junction temperature of the power device and the VF of the PN junction; according to the corresponding relation and VF1Determining VF1A corresponding junction temperature, which is the operating junction temperature of the power device;
wherein the measurement VF1Comprises the following steps: providing pulse voltage with fixed frequency and adjustable duty ratio to the power device to ensure that the power device heats and raises temperature by utilizing the internal resistance of the power device, and the surface temperature of the power device reaches and stabilizes at T1Thereafter, VF is measured1。
2. The method for testing the operational junction temperature of a power device as claimed in claim 1, wherein the test T is1Comprises the following steps: enabling the power device to stably work in a circuit for at least 3 hours, and then testing the surface temperature of the power device to obtain the T1。
3. The method for testing the operational junction temperature of the power device as claimed in claim 1, wherein the step of determining the relationship between the junction temperature of the power device and the VF of the PN junction comprises:
heating the power device to a preset temperature, stabilizing for a period of time to enable the internal and external temperatures of the power device to be consistent, then slowly cooling, measuring VF values of the PN junction at different temperature values in the cooling process, and obtaining the corresponding relation between the junction temperature and the VF of the PN junction.
4. The method for testing the operational junction temperature of a power device as claimed in claim 1, wherein the VF measurement is performed in case that the power device is a MOS transistor1Comprises the following steps:
constant direct current voltage is added to pins D and S of the MOS tube, and the pulse voltage is added to pin G, so that the MOS tube is in a continuous switching state, and the MOS tube heats and raises the temperature by utilizing the internal resistance of the MOS tube;
monitoring the surface temperature of the MOS tube; at said monitored temperature not being equal to T1In the case of (2), the pulse width of the pulse voltage is adjusted so that the surface temperature of the power device reaches and stabilizes at T1。
5. The method for testing the operational junction temperature of a power device as claimed in claim 1, wherein the VF measurement is performed in case that the power device is a diode1Comprises the following steps:
providing the pulse voltage to the forward direction of the diode, and heating and warming the diode by utilizing the internal resistance of the diode;
monitoring the surface temperature of the diode; at said monitored temperature not being equal to T1In the case of (2), the pulse width of the pulse voltage is adjusted so that the surface temperature of the power device reaches and stabilizes at T1。
6. A system for testing an operating junction temperature of a power device, the system comprising: the temperature control device comprises a temperature control unit, a pulse driving unit, a temperature measuring unit, a VF measuring unit and a control unit, wherein the temperature control unit can control the temperature of a power device through heating or cooling; the pulse driving unit can provide pulse voltage for the power device so that the power device heats and raises temperature by utilizing the internal resistance of the power device; the temperature measuring unit can measure the temperature of the surface of the power device acted by the temperature control unit and the pulse driving unit; the VF measuring unit can measure the VF value of a PN junction of the power device acted by the temperature control unit and the pulse driving unit;
the control unit can process the data measured by the temperature measuring unit and the VF measuring unit to obtain the working junction temperature of the power device, and the control unit can also send a signal to the pulse driving unit to adjust the pulse width of the pulse voltage.
7. The system for testing the operational junction temperature of a power device as claimed in claim 6, wherein the pulse driving unit comprises a pulse driving circuit, the VF measuring unit comprises a VF measuring circuit, and the system further comprises a switching circuit capable of switching between the pulse driving circuit and the VF measuring circuit.
8. The power device operational junction temperature test system of claim 6, wherein the temperature measurement unit is further capable of measuring T1，T1And the surface temperature value of the power device in normal operation in the operating circuit is obtained.
9. The system for testing the operational junction temperature of the power device as claimed in claim 8, wherein in case that the power device is an MOS transistor, the pulse driving unit is capable of applying a constant dc voltage to pins D and S of the MOS transistor and applying a pulse voltage to pin G to keep the MOS transistor in a continuous on/off state, and the MOS transistor heats up by its own internal resistance; the temperature measuring unit can monitor the surface temperature of the MOS tube; at said monitored temperature not being equal to T1The control unit can send a signal to the pulse driving unit to adjust the pulse width of the pulse voltage, so that the surface temperature of the power device reaches and stabilizes at T1(ii) a Under the condition that the power device is a diode, the pulse driving unit can provide pulse voltage to the forward direction of the diode, and the diode heats and raises temperature by utilizing the internal resistance of the diode; the temperature measuring unit can monitor the surface temperature of the diode; at said monitored temperature not being equal to T1The control unit can send a signal to the pulse driving unit to adjust the pulse width of the pulse voltage, so that the surface temperature of the power device reaches and stabilizes at T1(ii) a The VF measuring unit can measureVF1，VF1The surface temperature of the power device reaches and stabilizes at T1The VF value of the PN junction.
10. The system for testing the operational junction temperature of the power device as claimed in claim 9, wherein the temperature control unit is capable of heating the power device to a predetermined temperature and stabilizing for a period of time to make the internal and external temperatures of the power device consistent, and then slowly cooling; in the slow cooling process, the temperature measuring unit and the VF measuring unit can also respectively measure the real-time temperature of a power device acted by the temperature control unit and the VF value of a PN junction corresponding to the real-time temperature;
the control unit can obtain the corresponding relation between the real-time temperature and the VF value of the PN junction corresponding to the real-time temperature according to the real-time temperature, and can determine the VF value according to the corresponding relation1The corresponding temperature, which is the operating junction temperature of the power device.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114384399A (en) * | 2022-01-04 | 2022-04-22 | 上海航天电子通讯设备研究所 | Method for testing chip junction temperature of power amplifier |
| CN115453307A (en) * | 2022-11-11 | 2022-12-09 | 佛山市联动科技股份有限公司 | Semiconductor device electrical parameter testing device, testing method, medium and equipment |
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